JPH08188773A - Organic electroluminescence element - Google Patents
Organic electroluminescence elementInfo
- Publication number
- JPH08188773A JPH08188773A JP7018397A JP1839795A JPH08188773A JP H08188773 A JPH08188773 A JP H08188773A JP 7018397 A JP7018397 A JP 7018397A JP 1839795 A JP1839795 A JP 1839795A JP H08188773 A JPH08188773 A JP H08188773A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hole
- light emitting
- organic
- transporting polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、有機電界発光素子に関
し、詳しくは特定の正孔輸送性ポリマーを用いることに
より素子作製を容易にし、さらに素子の安定性を向上さ
せ、大面積化が容易な平面発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more specifically, by using a specific hole-transporting polymer, the device can be easily manufactured, the stability of the device can be further improved, and the area can be easily increased. Flat light emitting device.
【0002】[0002]
【従来の技術】電界発光素子(以下、「EL素子」と記
述する。)は、自発光性の全固体素子であり、視認性が
高く衝撃にも強いため、広く応用が期待されている。現
在は無機螢光体を用いたものが主流であり広く使用され
ているが、駆動に200V以上の交流電圧が必要なた
め、製造コストが高く、また輝度が不十分などの問題点
を有している。一方、有機化合物を用いたEL素子の研
究は、最初アントラセン等の単結晶を用いて始まった
が、1mm程度と膜厚が厚く、100V以上の駆動電圧
が必要であるという問題があった。そのため蒸着法によ
る薄膜化が試みられている(Thin Solid F
ilms,94,171(1982)。しかしながら、
駆動電圧は未だ30Vと高く、また膜中の電子・ホール
等のキャリア密度が低く、キャリアの再結合による励起
確率が低いため、充分な輝度が得られないという問題点
を有している。2. Description of the Related Art An electroluminescent device (hereinafter referred to as "EL device") is a self-luminous all-solid-state device, has high visibility and is resistant to impact, and is therefore expected to be widely applied. At present, inorganic fluorescent materials are mainly used and widely used, but since they require an AC voltage of 200 V or more for driving, they have problems such as high manufacturing cost and insufficient brightness. ing. On the other hand, research on an EL device using an organic compound was first started using a single crystal such as anthracene, but there was a problem that the film thickness was as thick as about 1 mm and a driving voltage of 100 V or more was required. Therefore, thin film formation by the vapor deposition method has been attempted (Thin Solid F
ilms, 94, 171 (1982). However,
The drive voltage is still as high as 30 V, the carrier density of electrons and holes in the film is low, and the excitation probability due to recombination of carriers is low, so that there is a problem that sufficient brightness cannot be obtained.
【0003】近年、正孔輸送性有機化合物と電子輸送能
を持つ有機螢光性物質を真空蒸着法を用いて順次積層し
薄膜化した機能分離型の素子において、10V程度の低
電圧で1000cd/m2 以上の高輝度が得られること
が報告され(Appl.Phys.Lett.,51,
913(1987)、活発に研究が行われている。しか
しながら、この素子では真空蒸着法を用い、0.1μm
以下の薄膜を形成するためピン正孔を生じ易く、充分な
性能を得るためには、厳しく管理された条件下で製膜を
行うことが必要であり、生産性が低く、大面積化が難し
いという問題がある。また、この素子は、数mA/cm
2 という高い電流密度状態で駆動されるため、大量の熱
を発生し、正孔輸送材料として好適に使用されているテ
トラフェニルジアミン誘導体が次第に結晶化し、輝度の
低下を招く等の素子の安定性の点で問題があった。In recent years, in a function-separated device in which a hole-transporting organic compound and an organic fluorescent substance having an electron-transporting ability are sequentially laminated by a vacuum vapor deposition method to form a thin film, a voltage of 1000 cd / It has been reported that a high brightness of m 2 or more can be obtained (Appl. Phys. Lett., 51,
913 (1987), active research is being conducted. However, this device uses a vacuum deposition method and
Since the following thin film is formed, pin holes are easily generated, and in order to obtain sufficient performance, it is necessary to perform film formation under strictly controlled conditions, productivity is low, and it is difficult to increase the area. There is a problem. In addition, this element has several mA / cm
Since it is driven in a high current density state of 2 , a large amount of heat is generated and the tetraphenyldiamine derivative, which is preferably used as a hole transport material, is gradually crystallized, leading to a decrease in brightness. There was a problem with.
【0004】安定性に関する問題解決のために、正孔輸
送材料として安定なアモルファス状態が得られるスター
バーストアミンを用いたり(日本化学会第65回春季年
会予稿集3−C2−34(1993))、ポリフォスフ
ァゼンの側鎖にトリフェニルアミンを導入したポリマー
を用いる(第42回高分子討論会予稿集20J21(1
993))ことが報告されているが、単独では正孔輸送
材料のイオン化ポテンシャルに起因する、陽極からの正
孔注入性あるいは発光層へのホール注入性を満足するも
のではない。また、ポリマーを用いた場合、高い電流密
度が得られず充分な輝度が得られていない。In order to solve the problem of stability, starburst amine which can obtain a stable amorphous state is used as a hole transport material (Proceedings of the 65th Annual Meeting of the Chemical Society of Japan 3-C2-34 (1993)). ), Using a polymer in which triphenylamine has been introduced into the side chain of polyphosphazene (Proceedings of the 42nd Symposium on Polymers 20J21 (1)
993)) has been reported, but it does not satisfy the hole injecting property from the anode or the hole injecting property to the light emitting layer due to the ionization potential of the hole transporting material. Further, when a polymer is used, a high current density cannot be obtained and sufficient brightness cannot be obtained.
【0005】一方、生産性向上が期待されるポリマー単
層構造による発光が検討され、ポリフェニレンビニレン
等の導電性高分子を用いたり(Nature,Vol.
357,477(1992))、正孔輸送性ポリビニル
カルバゾール中に電子輸送材料と蛍光色素を混入したも
の(第38回応用物理学関係連合講演会予稿集31p−
G−12(1991))が提案されているが、まだ輝
度、発光効率等が積層型EL素子には及ばない。ところ
で、下記一般式(I)で示される正孔輸送性ポリマーは
電子写真用材料として開発されたものであるが(特開平
5−232727号公報)、EL素子に適用することは
未だ報告されていない。On the other hand, light emission by a polymer single layer structure, which is expected to improve productivity, has been studied, and conductive polymers such as polyphenylene vinylene have been used (Nature, Vol.
357, 477 (1992)), a mixture of an electron-transporting material and a fluorescent dye in a hole-transporting polyvinylcarbazole (The 38th Applied Physics Association Joint Lecture Proceedings 31p-
G-12 (1991)) has been proposed, but the brightness, the luminous efficiency, etc. are still inferior to those of the laminated EL device. Incidentally, the hole-transporting polymer represented by the following general formula (I) has been developed as a material for electrophotography (JP-A-5-232727), but it has not yet been reported to be applied to EL devices. Absent.
【0006】[0006]
【発明が解決しようとする課題】本発明は、上記従来技
術の問題点に鑑みてなされたものであって、その目的は
製造が容易で充分な輝度が得られ、耐久性に優れたEL
素子を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and its purpose is to facilitate manufacture, obtain sufficient brightness, and provide an EL having excellent durability.
It is to provide an element.
【0007】[0007]
【課題を解決するための手段】本発明者等は、上記目的
を達成するため正孔輸送材料に関し鋭意検討した結果、
下記一般式(I)で示される正孔輸送性ポリマーが、有
機EL素子に好適なイオン化ポテンシャル、ホール移動
度、薄膜形成能を有することを見出だし、本発明を完成
するに至った。すなわち、本発明のEL素子は、少なく
とも一方が透明または半透明である一対の電極間に挾持
された有機化合物層より構成されるものであって、該有
機化合物層が、下記一般式(I)で示される正孔輸送性
ポリマーを含有する層を有することを特徴とする。Means for Solving the Problems As a result of intensive investigations by the present inventors regarding a hole transport material in order to achieve the above object,
It was found that the hole transporting polymer represented by the following general formula (I) has suitable ionization potential, hole mobility and thin film forming ability for organic EL devices, and has completed the present invention. That is, the EL device of the present invention comprises an organic compound layer sandwiched between a pair of electrodes, at least one of which is transparent or semitransparent, and the organic compound layer has the following general formula (I): It is characterized by having a layer containing a hole transporting polymer represented by.
【化2】 (式中、R1 およびR2 は、それぞれ独立に水素原子、
アルキル基、アルコキシ基、置換アミノ基、ハロゲン原
子、または置換もしくは未置換のアリール基を表し、X
は置換または未置換の2価の芳香族基表し、Yは2価ア
ルコール残基を表し、Zは2価カルボン酸残基を表し、
lおよびmは、それぞれ独立に1〜5の整数を意味し、
nおよびkは、それぞれ独立に0または1の整数を意味
し、pは5〜5000の整数を意味する。)Embedded image (In the formula, R 1 and R 2 are each independently a hydrogen atom,
An alkyl group, an alkoxy group, a substituted amino group, a halogen atom, or a substituted or unsubstituted aryl group, X
Represents a substituted or unsubstituted divalent aromatic group, Y represents a divalent alcohol residue, Z represents a divalent carboxylic acid residue,
l and m each independently represent an integer of 1 to 5,
n and k each independently represent an integer of 0 or 1, and p represents an integer of 5 to 5000. )
【0008】以下、本発明につき詳細に説明する。一般
式(I)で示される正孔輸送性ポリマーは、特開平5−
232727号公報に記述されている合成方法を用いて
容易に合成することができる。上記一般式(I)におけ
るX、YおよびZは、具体的には以下の構造より選ばれ
るものがあげられる。The present invention will be described in detail below. The hole-transporting polymer represented by formula (I) is disclosed in
It can be easily synthesized by using the synthesis method described in Japanese Patent No. 232727. Specific examples of X, Y and Z in the above general formula (I) include those selected from the following structures.
【0009】Xは、以下の基から選択されるものがあげ
られる。Examples of X include those selected from the following groups.
【化3】 〔式中、Arは下記式で示される基を表し、Embedded image [In the formula, Ar represents a group represented by the following formula,
【化4】 (R5 は、炭素数1〜4のアルキル基、炭素数1〜4の
アルコキシ基またはハロゲン原子を表す。) R3 およびR4 は、それぞれ水素原子、炭素数1〜4の
アルキル基、置換もしくは未置換のフェニル基、または
置換もしくは未置換のアラルキル基を表し、Yは2価ア
ルコール残基を表し、sは、0〜3の整数を意味す
る。〕[Chemical 4] (R 5 represents an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogen atom.) R 3 and R 4 are each a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and a substituent. Alternatively, it represents an unsubstituted phenyl group or a substituted or unsubstituted aralkyl group, Y represents a dihydric alcohol residue, and s represents an integer of 0 to 3. ]
【0010】YおよびZは、以下の基から選択されるも
のがあげられる。Examples of Y and Z include those selected from the following groups.
【化5】 〔R6 は、水素原子または炭素数1〜4のアルキル基を
表し、qおよびrは、それぞれ1〜10の整数を意味
し、tは1または2の整数を意味し、Wは以下の基から
選択されるものを表す。Embedded image [R 6 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, q and r each represent an integer of 1 to 10, t represents an integer of 1 or 2, and W represents a group below. Represents one selected from.
【化6】 (s′は1〜3の整数を意味する。)〕[Chemical 6] (S 'means an integer of 1 to 3)]
【0011】図1〜図2は、本発明に係る有機EL素子
の構成を示す。1は絶縁体基板、2は透明電極、31お
よび32は一般式(I)で示される正孔輸送性ポリマー
から構成される層であって、31は正孔輸送層として作
用し、32は発光層として作用するものを示し、4は電
子輸送能をもつ発光層、5は背面電極である。絶縁体基
板1は、発光を取り出すため透明なものが好ましく、ガ
ラス、プラスチックフィルム等が用いられる。透明電極
2は、絶縁体基板と同様に発光を取り出すため透明なも
ので、かつホールの注入を行うため仕事関数が大きなも
のが好ましく、酸化錫インジウム(ITO)、酸化錫
(NESA)、酸化インジウム、酸化亜鉛等の酸化膜、
あるいは蒸着あるいはスパッタされた金、白金、パラジ
ウム等が用いられる。1 and 2 show the structure of the organic EL device according to the present invention. 1 is an insulating substrate, 2 is a transparent electrode, 31 and 32 are layers composed of a hole transporting polymer represented by the general formula (I), 31 acts as a hole transporting layer, and 32 is a light emitting layer. The numeral 4 denotes a light emitting layer having an electron transporting function, and 5 denotes a back electrode. The insulator substrate 1 is preferably transparent for taking out light emission, and glass, plastic film, or the like is used. The transparent electrode 2 is preferably transparent so as to take out light emission similarly to the insulating substrate and has a large work function for injecting holes, and is preferably indium tin oxide (ITO), tin oxide (NESA), indium oxide. , Oxide film such as zinc oxide,
Alternatively, vapor-deposited or sputtered gold, platinum, palladium or the like is used.
【0012】図1の素子構成の場合、正孔輸送層として
作用する層31は、上記一般式(I)で示される正孔輸
送性ポリマーの単独で形成されるか、あるいはホール移
動度を調節するためにテトラフェニルジアミン誘導体を
1重量%から50重量%分散させて形成されてもよい。
また、電子輸送能をもつ発光層4は、固体状態で蛍光を
生じ、真空蒸着法により良好な薄膜形成が可能で、隣接
する一般式(I)で示される正孔輸送性ポリマーと強い
電子相互作用を示さない有機化合物を用いて形成され
る。好適には下記化合物(1)ないし化合物(13)が
用いられるがこれらに限定されるものではない。なお、
電子相互作用を示す化合物は、一般式(I)で示される
正孔輸送性ポリマー中に分散することにより蛍光波長が
長波長側にシフトすることから区別することができる。In the case of the device structure shown in FIG. 1, the layer 31 acting as a hole transporting layer is formed of the hole transporting polymer represented by the general formula (I) alone, or adjusts the hole mobility. For this purpose, the tetraphenyldiamine derivative may be dispersed in an amount of 1 to 50% by weight.
In addition, the light-emitting layer 4 having an electron transporting property emits fluorescence in a solid state, and a good thin film can be formed by a vacuum vapor deposition method, and a strong electron interaction with the adjacent hole transporting polymer represented by the general formula (I) is obtained. It is formed using an organic compound that does not act. The following compounds (1) to (13) are preferably used, but not limited thereto. In addition,
The compound exhibiting electron interaction can be distinguished from the fact that the fluorescence wavelength shifts to the long wavelength side when dispersed in the hole transporting polymer represented by the general formula (I).
【0013】[0013]
【化7】 [Chemical 7]
【0014】[0014]
【化8】 Embedded image
【0015】また、発光材料が、真空蒸着が可能である
が良好な薄膜とならないものや、明確な電子輸送性を示
さない場合、素子の耐久性向上や発光効率の向上を目的
として発光層と背面電極5の間に電子輸送層を挿入して
もよい。このような電子輸送層に用いられる電子輸送材
料としては、真空蒸着法により良好な薄膜を形成するこ
とが可能な化合物が用いられ、好適にはオキサジアゾー
ル誘導体、ニトロ置換フルオレノン誘導体、ジフェノキ
ノン誘導体、チオピランジオキシド誘導体、フレオレニ
リデンメタン誘導体等が用いられ、好適には下記化合物
(14)ないし化合物(16)が用いられるが、これら
に限られるものではない。When the light emitting material is one that can be vacuum-deposited but does not form a good thin film or does not show a clear electron transporting property, it is used as a light emitting layer for the purpose of improving the durability of the device and the light emitting efficiency. An electron transport layer may be inserted between the back electrodes 5. As the electron transport material used in such an electron transport layer, a compound capable of forming a good thin film by a vacuum vapor deposition method is used, and preferably an oxadiazole derivative, a nitro-substituted fluorenone derivative, a diphenoquinone derivative, A thiopyran dioxide derivative, a fluorenylidene methane derivative and the like are used, and the following compounds (14) to (16) are preferably used, but not limited thereto.
【0016】[0016]
【化9】 [Chemical 9]
【0017】図2の素子構成の場合、発光層として作用
する層32は、少なくとも一般式(I)で示される正孔
輸送性ポリマー中に、発光材料を50重量%以下、好ま
しくは0.01〜40重量%の範囲で分散させた層であ
る。発光材料としては好適には化合物(1)ないし化合
物(10)が用いられるが、素子に注入されるホールと
電子のバランスを調節するために、電子輸送材料を10
重量%〜50重量%分散させたり、発光層と背面電極5
の間に電子輸送層を挿入してもよい。このような電子輸
送材料としては、一般式(I)で示される正孔輸送性ポ
リマーと強い電子相互作用を示さない化合物が用いら
れ、好適には下記化合物(17)が用いられるが、これ
に限られるものではない。同様にホール移動度を調節す
るためにテトラフェニレンジアミン誘導体を所定量同時
に分散させて用いてもよい。In the case of the device structure shown in FIG. 2, the layer 32 acting as a light emitting layer contains 50% by weight or less, preferably 0.01% or less of the light emitting material in at least the hole transporting polymer represented by the general formula (I). It is a layer dispersed in the range of -40% by weight. The compound (1) to the compound (10) are preferably used as the light emitting material, but an electron transporting material is used in order to adjust the balance between holes and electrons injected into the device.
% To 50% by weight, light emitting layer and back electrode 5
An electron transport layer may be inserted between them. As such an electron transporting material, a compound which does not show strong electron interaction with the hole transporting polymer represented by the general formula (I) is used, and the following compound (17) is preferably used. It is not limited. Similarly, in order to adjust the hole mobility, a predetermined amount of the tetraphenylenediamine derivative may be simultaneously dispersed and used.
【化10】 [Chemical 10]
【0018】背面電極5では、真空蒸着可能で、電子注
入を行うため仕事関数の小さな金属が使用されるが、特
に好ましくはマグネシウム、アルミニウム、銀、インジ
ウムおよびこれらの合金があげられる。For the back electrode 5, a metal having a small work function is used because it can be vacuum-deposited and injects electrons, but magnesium, aluminum, silver, indium and alloys thereof are particularly preferable.
【0019】これら有機EL素子は、まず一般式(I)
で示される正孔輸送性ポリマー単独、あるいは一般式
(I)で示される正孔輸送性ポリマーと発光材料、およ
び必要に応じて電子輸送材料、正孔輸送材料を有機溶媒
中に分散し、この溶液を用いて前記透明電極上に、スピ
ンコーティング法、ディップ法等を用いて製膜される。
膜厚は0.03〜0.2μm程度が好ましい。発光材料
の分散状態は、分子分散状態でも微粒子分散状態でも構
わない。分子分散状態とするためには、分散溶媒は正孔
輸送性ポリマー、発光材料、電子輸送材料、正孔輸送材
料の共通溶媒を用いる必要があり、微粒子分散状態とす
るためには分散溶媒は発光材料の分散性と、電子輸送材
料、正孔輸送材料および正孔輸送性ポリマーの溶解性を
考慮して選択する必要がある。微粒子状に分散するため
には、ボールミル、サンドミル、ペイントシェイカー、
アトライター、ボールミル、ホモジナイザー、超音波法
などが利用できる。次いで、目的とする素子構成に応じ
て、それぞれ、発光層、電子輸送層等、および背面電極
を真空蒸着法を用いて形成すればよい。それによりEL
素子を容易に作製することができる。積層する発光層、
電子輸送層の膜厚は、各々0.1μm以下とすることが
好ましい。These organic EL elements are represented by the general formula (I).
The hole-transporting polymer represented by the formula (1) or a hole-transporting polymer represented by the general formula (I) and a light-emitting material, and if necessary, an electron-transporting material and a hole-transporting material are dispersed in an organic solvent. A solution is used to form a film on the transparent electrode by a spin coating method, a dipping method, or the like.
The film thickness is preferably about 0.03 to 0.2 μm. The dispersed state of the light emitting material may be a molecular dispersed state or a fine particle dispersed state. In order to obtain a molecular dispersion state, it is necessary to use a common solvent for the hole-transporting polymer, the light-emitting material, the electron-transporting material and the hole-transporting material as the dispersion solvent. It is necessary to select in consideration of dispersibility of the material and solubility of the electron transport material, the hole transport material and the hole transport polymer. In order to disperse in fine particles, a ball mill, a sand mill, a paint shaker,
Attritor, ball mill, homogenizer, ultrasonic method, etc. can be used. Then, the light emitting layer, the electron transporting layer, and the like, and the back electrode may be formed by a vacuum vapor deposition method depending on the intended device configuration. Thereby EL
The element can be easily manufactured. A light emitting layer to be laminated,
The thickness of each electron transport layer is preferably 0.1 μm or less.
【0020】[0020]
【実施例】以下、実施例によって本発明をさらに具体的
に説明するが、本発明はこれに限定されるものではな
い。なお、寿命の測定は次のようにして行った。すなわ
ち、乾燥窒素中で、素子が100cd/m2 の時に流れ
る電流で定電流駆動を行い、発光輝度の半減期を素子寿
命として採用した。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto. The life was measured as follows. That is, the element was driven in constant current with a current flowing when the element was 100 cd / m 2 in dry nitrogen, and the half life of the emission luminance was adopted as the element life.
【0021】実施例1 下記構造式(I−1)で示される繰り返し構造単位より
なる正孔輸送性ポリマー(分子量8万)の5重量%ジク
ロロエタン溶液を調製し、Example 1 A 5% by weight dichloroethane solution of a hole-transporting polymer (molecular weight 80,000) consisting of repeating structural units represented by the following structural formula (I-1) was prepared,
【化11】 0.1μmのPTFEフィルター(ADVANTEC社
製)で濾過した。この溶液を用いて、2mm幅の短冊型
ITO電極をエッチングにより形成したガラス基板上
に、ディップ法により膜厚約0.1μmの正孔輸送層を
形成した。充分乾燥させた後、発光材料として昇華精製
した前記例示化合物(1)をタングステンボートに入
れ、真空蒸着法により正孔輸送層上に膜厚0.05μm
の発光層を形成した。この時の真空度は10-5Tor
r、ボート温度は300℃であった。続いてMg−Ag
合金を2mm幅、0.15μm厚の背面電極としてIT
O電極と交差するように共蒸着により形成した。素子の
有効面積は0.04cm2 であった。上記のようにして
作製した素子を、真空中(10-3Torr)でITO電
極側をプラス、Mg−Ag合金側をマイナスとして直流
15Vを印加したところ、240cd/m2 のグリーン
(波長極大530nm)の発光がみられ、この時の電流
密度は42mA/cm2 であった。また、定電流(18
mA/cm2 )駆動での発光の半減期は約12時間であ
った。[Chemical 11] It was filtered through a 0.1 μm PTFE filter (manufactured by ADVANTEC). Using this solution, a hole transport layer having a thickness of about 0.1 μm was formed by a dipping method on a glass substrate on which a strip-shaped ITO electrode having a width of 2 mm was formed by etching. After sufficiently drying, the exemplified compound (1) purified by sublimation as a light emitting material was put into a tungsten boat, and a film thickness of 0.05 μm was formed on the hole transport layer by a vacuum deposition method.
The light emitting layer of was formed. The vacuum degree at this time is 10 -5 Tor
The boat temperature was 300 ° C. Then Mg-Ag
The alloy is used as a back electrode with a width of 2 mm and a thickness of 0.15 μm.
It was formed by co-evaporation so as to intersect with the O electrode. The effective area of the device was 0.04 cm 2 . When a DC voltage of 15 V was applied to the device manufactured as described above in a vacuum (10 −3 Torr) with the ITO electrode side being positive and the Mg—Ag alloy side being negative, a green of 240 cd / m 2 (wavelength maximum 530 nm ) Emission was observed, and the current density at this time was 42 mA / cm 2 . In addition, constant current (18
The half-life of light emission under mA / cm 2 ) drive was about 12 hours.
【0022】実施例2 実施例1に用いた正孔輸送性ポリマー(I−1)を1重
量部、発光材料として前記例示化合物(1)を1重量部
を混合し、10重量%ジクロロエタン溶液を調製し、
0.1μmのPTEEフィルターで濾過した。この溶液
を用いて、2mm幅の短冊型ITO電極をエッチングに
より形成したガラス基板上に、ディップ法により膜厚約
0.15μmの正孔輸送層を形成した。充分乾燥させた
後、Mg−Ag合金を2mm幅、0.15μm厚の背面
電極としてITO電極と交差するように共蒸着により形
成した。素子の有効面積は0.04cm2 である。この
様にして作製した素子を、真空中(10-3Torr)で
ITO電極側をプラス、Mg−Ag合金側をマイナスと
して直流15Vを印加したところ、160cd/m2 の
グリーン(波長極大530nm)の発光がみられ、この
時の電流密度は31mA/cm2 であった。また、定電
流(19mA/cm2 )駆動での発光の半減期は約10
時間であった。Example 2 1 part by weight of the hole-transporting polymer (I-1) used in Example 1 and 1 part by weight of the exemplified compound (1) as a light emitting material were mixed to obtain a 10% by weight dichloroethane solution. Prepared,
It was filtered through a 0.1 μm PTEE filter. Using this solution, a hole transport layer having a film thickness of about 0.15 μm was formed by a dipping method on a glass substrate on which a strip-shaped ITO electrode having a width of 2 mm was formed by etching. After sufficiently drying, a Mg-Ag alloy was formed by co-evaporation as a back electrode having a width of 2 mm and a thickness of 0.15 μm so as to intersect with the ITO electrode. The effective area of the device is 0.04 cm 2 . When a DC voltage of 15 V was applied to the device thus produced in a vacuum (10 −3 Torr) with the ITO electrode side being positive and the Mg—Ag alloy side being negative, a green of 160 cd / m 2 (wavelength maximum 530 nm) was obtained. Was observed, and the current density at this time was 31 mA / cm 2 . The half-life of light emission at a constant current (19 mA / cm 2 ) drive is about 10
It was time.
【0023】実施例3 実施例1に用いた正孔輸送性ポリマー(I−1)を2重
量部、発光材料として前記例示化合物(10)を0.1
重量部、電子輸送材料として前記例示化合物(17)を
1重量部を混合し、10重量%ジクロロエタン溶液を調
製し、0.1μmのPTEEフィルターで濾過した。こ
の溶液を用いて、2mm幅の短冊型ITO電極をエッチ
ングにより形成したガラス基板上に、ディップ法により
膜厚約0.15μmの正孔輸送層を形成した。充分乾燥
させた後、Mg−Ag合金を2mm幅、0.15μm厚
の背面電極としてITO電極と交差するように共蒸着に
より形成した。素子の有効面積は0.04cm2 であ
る。この様にして作製した素子を、真空中(10-3To
rr)でITO電極側をプラス、Mg−Ag合金側をマ
イナスとして直流10Vを印加したところ、150cd
/m2 の赤色の発光がみられ、この時の電流密度は22
mA/cm2 であった。また、定電流(15mA/cm
2 )駆動での発光の半減期は約9時間であった。Example 3 2 parts by weight of the hole transporting polymer (I-1) used in Example 1 and 0.1 of the exemplified compound (10) as a light emitting material.
By weight, 1 part by weight of the exemplified compound (17) as an electron transport material was mixed to prepare a 10 wt% dichloroethane solution, which was filtered through a 0.1 μm PTEE filter. Using this solution, a hole transport layer having a film thickness of about 0.15 μm was formed by a dipping method on a glass substrate on which a strip-shaped ITO electrode having a width of 2 mm was formed by etching. After sufficiently drying, a Mg-Ag alloy was formed by co-evaporation as a back electrode having a width of 2 mm and a thickness of 0.15 μm so as to intersect with the ITO electrode. The effective area of the device is 0.04 cm 2 . The device manufactured in this manner was placed in a vacuum (10 −3 To
In rr), when the ITO electrode side is positive and the Mg—Ag alloy side is negative and a direct current of 10 V is applied, it is 150 cd.
/ M 2 red emission was observed, and the current density at this time was 22
It was mA / cm 2 . In addition, constant current (15 mA / cm
2 ) The half-life of light emission during driving was about 9 hours.
【0024】比較例1 下記構造式(18)で示される正孔輸送材料を1重量
部、発光材料として前記例示化合物(1)を1重量部、Comparative Example 1 1 part by weight of the hole transport material represented by the following structural formula (18), and 1 part by weight of the exemplified compound (1) as a light emitting material,
【化12】 バインダー樹脂としてPMMAを1重量部混合し、10
重量%ジクロロエタン溶液を調製し、0.1μmのPT
EEフィルターで濾過した。この溶液を用いて、2mm
幅の短冊型ITO電極をエッチングにより形成したガラ
ス基板上に、ディップ法により膜厚約0.15μmの正
孔輸送層を形成した。充分乾燥させた後、Mg−Ag合
金を2mm幅、0.15μm厚の背面電極としてITO
電極と交差するように共蒸着により形成した。素子の有
効面積は0.04cm2 であった。上記のようにして作
製した素子を、真空中(10-3Torr)でITO電極
側をプラス、Mg−Ag合金側をマイナスとして直流2
0Vを印加したところ、130cd/m2 のグリーンの
発光がみられ、この時の電流密度は28mA/cm2 で
あった。また、定電流(22mA/cm2 )駆動での発
光の半減期は約6時間であった。[Chemical 12] As a binder resin, 1 part by weight of PMMA is mixed and 10
Prepare a wt% dichloroethane solution and add 0.1 μm PT
It was filtered with an EE filter. 2 mm with this solution
A hole transport layer having a film thickness of about 0.15 μm was formed by a dipping method on a glass substrate on which a strip-shaped ITO electrode having a width was formed by etching. After being sufficiently dried, a Mg-Ag alloy was used as a back electrode having a width of 2 mm and a thickness of 0.15 μm and ITO.
It was formed by co-evaporation so as to intersect the electrodes. The effective area of the device was 0.04 cm 2 . The element manufactured as described above was subjected to a direct current of 2 in a vacuum (10 −3 Torr) with the ITO electrode side being positive and the Mg—Ag alloy side being negative.
When 0 V was applied, green emission of 130 cd / m 2 was observed, and the current density at this time was 28 mA / cm 2 . The half-life of light emission under constant current (22 mA / cm 2 ) drive was about 6 hours.
【0025】比較例2 正孔輸送性ポリマーとしてポリビニルカルバゾールを2
重量部、発光材料として例示化合物(10)を0.1重
量部、電子輸送材料として前記例示化合物(14)を1
重量部を混合し、10重量%ジクロロエタン溶液を調製
し、0.1μmのPTEEフィルターで濾過した。この
溶液を用いて、2mm幅の短冊型ITO電極をエッチン
グにより形成したガラス基板上に、ディップ法により膜
厚約0.15μmの正孔輸送層を形成した。充分乾燥さ
せた後、Mg−Ag合金を2mm幅、0.15μm厚の
背面電極としてITO電極と交差するように共蒸着によ
り形成した。素子の有効面積は0.04cm2 であっ
た。上記のようにして作製した素子を、真空中(10-3
Torr)でITO電極側をプラス、Mg−Ag側をマ
イナスとして直流15Vを印加したところ、110cd
/m2 の赤色の発光がみられ、この時の電流密度は24
mA/cm2 であった。また、定電流(23mA/cm
2 )駆動での発光の半減期は約4時間であった。Comparative Example 2 Polyvinylcarbazole was used as the hole-transporting polymer.
1 part by weight of the exemplified compound (10) as a light emitting material, and 1 part of the exemplified compound (14) as an electron transport material.
Parts by weight were mixed to prepare a 10% by weight dichloroethane solution, which was filtered through a 0.1 μm PTEE filter. Using this solution, a hole transport layer having a film thickness of about 0.15 μm was formed by a dipping method on a glass substrate on which a strip-shaped ITO electrode having a width of 2 mm was formed by etching. After sufficiently drying, a Mg-Ag alloy was formed by co-evaporation as a back electrode having a width of 2 mm and a thickness of 0.15 μm so as to intersect with the ITO electrode. The effective area of the device was 0.04 cm 2 . The element produced as described above was placed in a vacuum (10 −3
Torr), when the ITO electrode side is positive and the Mg-Ag side is negative and a direct current of 15 V is applied, 110 cd
/ M 2 red emission was observed, and the current density at this time was 24
It was mA / cm 2 . In addition, constant current (23 mA / cm
2 ) The half-life of light emission during driving was about 4 hours.
【0026】[0026]
【発明の効果】本発明の有機EL素子においては、上記
の一般式(I)で示される正孔輸送性ポリマーを含有す
る層を形成したから、その製造に際して、スピンコーテ
ィング法、ディップ法等を用いて良好な薄膜を形成する
ことが可能であり、有機EL素子に好適なイオン化ポテ
ンシャル、正孔移動度をもつものとなる。また、膜厚を
比較的厚く設定することができるため、ピンホール等の
不良も少なく、大面積化も容易であり、しかも素子の高
輝度化と耐久性の向上が可能となる。INDUSTRIAL APPLICABILITY In the organic EL device of the present invention, since the layer containing the hole transporting polymer represented by the above general formula (I) is formed, the spin coating method, the dipping method, etc. are used in the production thereof. It is possible to form a good thin film by using it, and it has an ionization potential and hole mobility suitable for an organic EL device. Further, since the film thickness can be set to be relatively large, defects such as pinholes are few, and it is easy to increase the area, and it is possible to increase the brightness of the element and improve the durability.
【図1】 本発明の有機EL素子の一例の模式的断面図
である。FIG. 1 is a schematic cross-sectional view of an example of an organic EL element of the present invention.
【図2】 本発明の有機EL素子の他の一例の模式的断
面図である。FIG. 2 is a schematic cross-sectional view of another example of the organic EL element of the present invention.
1…絶縁体基板、2…透明電極、31…正孔輸送層、3
2…発光層、4…電子輸送能をもつ発光層、5…背面電
極、1 ... Insulator substrate, 2 ... Transparent electrode, 31 ... Hole transport layer, 3
2 ... Emitting layer, 4 ... Emitting layer having electron transporting ability, 5 ... Back electrode,
Claims (4)
る一対の電極間に挾持された有機化合物層より構成され
る電界発光素子において、該有機化合物層が、下記一般
式(I)で示される正孔輸送性ポリマーを含有する層を
有することを特徴とする有機電界発光素子。 【化1】 (式中、R1 およびR2 は、それぞれ独立に水素原子、
アルキル基、アルコキシ基、置換アミノ基、ハロゲン原
子、または置換もしくは未置換のアリール基を表し、X
は置換または未置換の2価の芳香族基を表し、Yは2価
アルコール残基を表し、Zは2価カルボン酸残基を表
し、lおよびmは、それぞれ独立に1〜5の整数を意味
し、nおよびkは、それぞれ独立に0または1の整数を
意味し、pは5〜5000の整数を意味する。)1. An electroluminescent device comprising an organic compound layer sandwiched between a pair of electrodes, at least one of which is transparent or semitransparent, wherein the organic compound layer is a positive electrode represented by the following general formula (I). An organic electroluminescent device having a layer containing a hole transporting polymer. Embedded image (In the formula, R 1 and R 2 are each independently a hydrogen atom,
An alkyl group, an alkoxy group, a substituted amino group, a halogen atom, or a substituted or unsubstituted aryl group, X
Represents a substituted or unsubstituted divalent aromatic group, Y represents a divalent alcohol residue, Z represents a divalent carboxylic acid residue, and l and m each independently represent an integer of 1 to 5. And n and k each independently represent an integer of 0 or 1, and p represents an integer of 5 to 5000. )
れる正孔輸送性ポリマー層および発光層を順次形成した
ことを特徴とする請求項1記載の有機電界発光素子。2. The organic electroluminescent device according to claim 1, wherein the hole transporting polymer layer represented by the general formula (I) and the light emitting layer are sequentially formed on the transparent electrode.
れる正孔輸送性ポリマーおよび発光材料を含有する発光
層を形成したことを特徴とする請求項1記載の有機電界
発光素子。3. The organic electroluminescent device according to claim 1, wherein a light emitting layer containing the hole transporting polymer represented by the general formula (I) and a light emitting material is formed on the transparent electrode.
を特徴とする請求項3記載の有機電界発光素子。4. The organic electroluminescent device according to claim 3, wherein the light emitting layer contains an electron transporting compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7018397A JPH08188773A (en) | 1995-01-11 | 1995-01-11 | Organic electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7018397A JPH08188773A (en) | 1995-01-11 | 1995-01-11 | Organic electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08188773A true JPH08188773A (en) | 1996-07-23 |
Family
ID=11970569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7018397A Pending JPH08188773A (en) | 1995-01-11 | 1995-01-11 | Organic electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08188773A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720091B2 (en) * | 2000-03-16 | 2004-04-13 | Sumitomo Chemical Company, Limited | Polymeric fluorescent substance, polymeric fluorescent substance and polymer light-emitting device using the same |
| JP2012169618A (en) * | 2011-02-15 | 2012-09-06 | Xerox Corp | Photovoltaic device |
-
1995
- 1995-01-11 JP JP7018397A patent/JPH08188773A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720091B2 (en) * | 2000-03-16 | 2004-04-13 | Sumitomo Chemical Company, Limited | Polymeric fluorescent substance, polymeric fluorescent substance and polymer light-emitting device using the same |
| EP2302014A1 (en) | 2000-03-16 | 2011-03-30 | Sumitomo Chemical Company, Limited | Polymeric fluorescent substance, polymeric fluorescent substance solution and polymer light-emitting device having low contents of poor solvents |
| EP2305773A1 (en) | 2000-03-16 | 2011-04-06 | Sumitomo Chemical Company, Limited | Polymeric fluorescent substance, polymeric fluorescent substance solution and polymer light-emitting device having low water contents |
| EP2308944A1 (en) | 2000-03-16 | 2011-04-13 | Sumitomo Chemical Company, Limited | Polymeric fluorescent material, solution of this polymeric fluorescent material, and luminescent polymer device containing this material |
| JP2012169618A (en) * | 2011-02-15 | 2012-09-06 | Xerox Corp | Photovoltaic device |
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