JPH0818310A - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
JPH0818310A
JPH0818310A JP6146068A JP14606894A JPH0818310A JP H0818310 A JPH0818310 A JP H0818310A JP 6146068 A JP6146068 A JP 6146068A JP 14606894 A JP14606894 A JP 14606894A JP H0818310 A JPH0818310 A JP H0818310A
Authority
JP
Japan
Prior art keywords
package
film
cavity
circuit
frequency band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6146068A
Other languages
Japanese (ja)
Inventor
Teru Jiyosawa
輝 如澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP6146068A priority Critical patent/JPH0818310A/en
Publication of JPH0818310A publication Critical patent/JPH0818310A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PURPOSE:To extend the frequency band by sticking a film of a resistor to the cover or the like of the package of a circuit or a semiconductor device. CONSTITUTION:A film 2 of the resistor is formed in a part of a cover 1 of the package of a circuit or a semiconductor device which is used in the frequency band between resonance frequencies of the first-order mode and the second-order mode of the package used for micro waves and millimeter waves, and thereby, electromagnetic waves radiated in the cavity are absorbed to suppress the resonance. Consequently, the film 2 is formed to extend the frequency band which the package can use. Though it is effective that the film 2 is formed in a part of the cover 1, it is more effective that the film 2 is formed in all parts facing the cavity except the part of adhesion to the box body. Thus, the frequency band is extended to suppress the resonance without degrading the reliability.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置パッケージ
に関し、特にマイクロ波、ミリ波で使用されるパッケー
ジに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device package, and more particularly to a package used for microwaves and millimeter waves.

【0002】[0002]

【従来の技術】従来のパッケージは、図8のように、パ
ッケージの内部の回路9と外部とを電気的に接続する端
子11を有し、天井となる面全てが開口部となった金属
の箱体8と、その開口部を封止する図7に示す金属製の
蓋7によって構成されている。このような回路モジュー
ル用パッケージでは、回路9に流れる信号の周波数が高
くなると、端子11と回路基板10上の線路9aとの接
続部や線路9aと半導体装置9bとの接続部等での信号
の散乱、放射が増大する。この放射された信号のうち箱
体8と蓋7で囲まれたキャビテイの寸法による周波数
2. Description of the Related Art A conventional package, as shown in FIG. 8, has a terminal 11 for electrically connecting the circuit 9 inside the package and the outside, and a metal plate having an opening on the entire surface serving as a ceiling. It is composed of a box body 8 and a metal lid 7 shown in FIG. 7 that seals the opening thereof. In such a circuit module package, when the frequency of the signal flowing in the circuit 9 becomes high, the signal at the connection portion between the terminal 11 and the line 9a on the circuit board 10 or the connection portion between the line 9a and the semiconductor device 9b is changed. Scattering and radiation increase. Of the radiated signal, the frequency depending on the size of the cavity surrounded by the box 8 and the lid 7.

【0003】[0003]

【数1】 [Equation 1]

【0004】を持った信号は、このキャビテイ内に電磁
波として蓄えられる。この電磁波が再び線路9aに吸収
され、信号とともに半導体装置9bに伝達されると、異
常発振や破壊を招き、端子11を通りパッケージ外部に
伝達されると、この回路モジュールに接続された回路に
悪影響を与える。
A signal having "1" is stored as an electromagnetic wave in this cavity. When this electromagnetic wave is again absorbed by the line 9a and is transmitted to the semiconductor device 9b together with the signal, it causes abnormal oscillation and destruction, and when it is transmitted to the outside of the package through the terminal 11, it adversely affects the circuit connected to this circuit module. give.

【0005】[0005]

【発明が解決しようとする課題】このため、回路モージ
ュルに入出力できる信号の周波数帯域は、回路を封止す
るパッケージ内部の体積による周波数、すなわち共振周
波数を除く周波数帯域に限られる。このパッケージのキ
ャビテイ内で起こる共振を抑えるため、箱体8や蓋7の
キャビテイに面する部位に電波吸収体を接着することが
行われてきた(実開63−55545号公報)。しか
し、この場合は、使用中剥離しやすく封止されている半
導体装置を破損する恐れがあり、信頼性の面で問題があ
った。
Therefore, the frequency band of the signals that can be input / output to / from the circuit module is limited to the frequency due to the volume inside the package that seals the circuit, that is, the frequency band excluding the resonance frequency. In order to suppress the resonance occurring in the cavity of this package, a radio wave absorber has been adhered to a portion of the box body 8 or the lid 7 facing the cavity (Japanese Utility Model Laid-Open No. 63-55545). However, in this case, the semiconductor device which is easily peeled off during use may be damaged, and there is a problem in reliability.

【0006】本発明は、信頼性を損ねずに共振を抑える
ことが出来る、回路または半導体装置のパッケージを提
供することを目的としている。
An object of the present invention is to provide a package of a circuit or a semiconductor device which can suppress resonance without spoiling reliability.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、キャビテイ内に半導体素子及び回路基板
を搭載し、金属キャップで封止してなる半導体パッケー
ジにおいて、前記パッケージ内のキャビテイに面する部
位の少なくとも一部に抵抗体の膜を形成した。また、パ
ッケージ内のキャビテイの側面の少なくとも一部に抵抗
体の膜を形成した。
In order to solve the above-mentioned problems, the present invention provides a semiconductor package in which a semiconductor element and a circuit board are mounted in a cavity and sealed with a metal cap. A resistor film was formed on at least a part of the region facing the. Further, a resistor film is formed on at least a part of the side surface of the cavity in the package.

【0008】[0008]

【作用】本発明は、上記のように構成したので、キャビ
テイ又はキャビテイに面する部位に形成した抵抗体の膜
によりキャビテイ内で起こる共振を抑えることが出来
る。
Since the present invention is configured as described above, the resonance that occurs in the cavity can be suppressed by the cavity or the film of the resistor formed in the portion facing the cavity.

【0009】[0009]

【実施例】以下図面を用いて本発明の実施例を説明す
る。図1乃至図3は、本発明の一実施例を示す。図3
は、本発明の回路モジュールの半導体パッケージの斜視
図、図1、図2は、その蓋の構造である。半導体パッケ
ージは、回路のモジュールを封止するパッケージの内部
の回路4と外部とを電気的に接続する端子6を有し、そ
の天井となる面全てが開口部となった金属の箱体3と、
その開口部に接着される金属製の蓋1のキャビテイ対向
面である内側に抵抗体の膜2が形成されて、半導体パッ
ケージが構成されている。
Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show an embodiment of the present invention. FIG.
FIG. 1 is a perspective view of a semiconductor package of a circuit module of the present invention, and FIGS. 1 and 2 show the structure of its lid. The semiconductor package has a terminal 6 for electrically connecting the circuit 4 inside the package that seals the circuit module and the outside, and a metal box 3 having an opening on the entire surface that serves as the ceiling. ,
The semiconductor film is formed by forming the resistor film 2 on the inside of the lid 1 made of metal which is adhered to the opening, which is the surface facing the cavity.

【0010】抵抗体の膜2は、キャビテイ内に放射され
た電磁波を吸収し、共振を抑圧する。したがって、抵抗
体の膜2を設けたことで、パッケージの使用できる周波
数帯域を広げることが出来る。抵抗体の膜2は、図1で
示す通り蓋1の一部位に形成されていても効果がある
が、図2のように箱体3と接着部位を除くキャビテイに
面する全ての部位に形成されていると大きな効果が得ら
れる。また、蓋1でなく、箱体3に抵抗膜が形成されて
いても同様の効果が得られる。
The resistor film 2 absorbs the electromagnetic wave radiated in the cavity and suppresses resonance. Therefore, by providing the resistor film 2, the frequency band in which the package can be used can be expanded. The film 2 of the resistor is effective even if it is formed on one part of the lid 1 as shown in FIG. 1, but is formed on all the parts facing the cavity except the box 3 and the adhesion part as shown in FIG. If it is done, a great effect can be obtained. The same effect can be obtained even if the resistance film is formed on the box body 3 instead of the lid 1.

【0011】図4乃至図6は、別の実施例を示す。図6
は、本発明を用いたMMIC(マイクロ波半導体素子)
用のパッケージの斜視図、図4、図5は、その蓋12の
構造である。MMICを封止するパッケージは、パッケ
ージ内部のMMIC15と外部とを電気的に接続する端
子16を有し、その天井となる面全てが開口部となった
金属の箱体14とその開口部に接着される抵抗膜13が
形成された金属の蓋12によって構成されている。
4 to 6 show another embodiment. Figure 6
Is an MMIC (microwave semiconductor device) using the present invention.
4 and 5 show the structure of the lid 12 of the package for use in the present invention. The package for encapsulating the MMIC has a terminal 16 for electrically connecting the MMIC 15 inside the package and the outside, and a metal box 14 having an opening on the entire ceiling surface thereof and the opening 16 is bonded to the opening. Is formed of a metal lid 12 on which a resistive film 13 is formed.

【0012】また、この抵抗体の膜13は、厚膜印刷や
薄膜印刷によって形成することが出来るので、強い接着
力を得ることが出来、剥離して回路を破損することがな
い。さらに、電波吸収体を接着するために必要なスペー
スも必要ないため、小型化にも十分に対応できる。
Further, since the resistor film 13 can be formed by thick film printing or thin film printing, a strong adhesive force can be obtained and peeling does not damage the circuit. Further, since the space required for bonding the radio wave absorber is not required, it is possible to sufficiently cope with miniaturization.

【0013】[0013]

【発明の効果】以上説明したように、本発明は、マイク
ロ波、ミリ波で使われるパッケージの一次モードと二次
モードの共振周波数の間の周波数帯で使用される回路ま
たは半導体装置のパッケージの蓋等に抵抗体の膜をつけ
たことにより、パッケージの共振を抑えることが出来る
のでパッケージの使用が可能な周波数帯域を広げること
が出来、またそれによって信頼性を劣化させることがな
く、小型化も可能となる。
As described above, the present invention can be applied to a package of a circuit or a semiconductor device used in a frequency band between the resonance frequencies of the primary mode and the secondary mode of a package used in microwaves and millimeter waves. By attaching a resistor film to the lid, etc., it is possible to suppress the resonance of the package, so that the frequency band in which the package can be used can be expanded, and the reliability is not deteriorated by this, and the size can be reduced. Will also be possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の回路用パッケージの実施例の斜視図。FIG. 1 is a perspective view of an embodiment of a circuit package of the present invention.

【図2】抵抗体の膜を形成した蓋の斜視図。FIG. 2 is a perspective view of a lid on which a resistor film is formed.

【図3】複数の抵抗体の膜を形成した蓋の斜視図。FIG. 3 is a perspective view of a lid on which a film of a plurality of resistors is formed.

【図4】本発明のMMIC用パッケージの実施例の斜視
図。
FIG. 4 is a perspective view of an embodiment of the MMIC package of the present invention.

【図5】抵抗体の膜を形成した蓋の斜視図。FIG. 5 is a perspective view of a lid on which a resistor film is formed.

【図6】複数の抵抗体の膜を形成した蓋の斜視図。FIG. 6 is a perspective view of a lid on which a film of a plurality of resistors is formed.

【図7】従来の回路用パッケージの実施例の斜視図。FIG. 7 is a perspective view of an example of a conventional circuit package.

【図8】蓋の斜視図。FIG. 8 is a perspective view of a lid.

【符号の説明】 1 蓋 2 抵抗体の膜 3 箱体 4 回路 5 回路基板 6 端子 7 蓋 8 箱体 9 回路 9a 線路 9b 半導体装置 10 回路基板 11 端子 12 蓋 13 抵抗体の膜 14 箱体 15 MMIC 16 端子[Explanation of Codes] 1 Lid 2 Resistor Film 3 Box 4 Circuit 5 Circuit Board 6 Terminal 7 Lid 8 Box 9 Circuit 9a Line 9b Semiconductor Device 10 Circuit Board 11 Terminal 12 Lid 13 Resistor Film 14 Box 15 MMIC 16 terminal

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】キャビテイ内に半導体素子及び回路基板を
搭載し、金属キャップで封止してなる半導体パッケージ
において、前記パッケージ内のキャビテイに面する部位
の少なくとも一部に抵抗体の膜を形成したことを特徴と
する半導体パッケ−ジ
1. In a semiconductor package in which a semiconductor element and a circuit board are mounted in a cavity and sealed with a metal cap, a resistor film is formed on at least a part of a portion of the package facing the cavity. A semiconductor package characterized by
【請求項2】キャビテイ内に半導体素子及び回路基板を
搭載し、金属キャップで封止してなる半導体パッケージ
において、前記パッケージ内のキャビテイの側面の少な
くとも一部に抵抗体の膜を形成したことを特徴とする半
導体パッケ−ジ
2. In a semiconductor package in which a semiconductor element and a circuit board are mounted in a cavity and sealed with a metal cap, a resistor film is formed on at least a part of a side surface of the cavity in the package. Characteristic semiconductor package
JP6146068A 1994-06-28 1994-06-28 Semiconductor package Pending JPH0818310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6146068A JPH0818310A (en) 1994-06-28 1994-06-28 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6146068A JPH0818310A (en) 1994-06-28 1994-06-28 Semiconductor package

Publications (1)

Publication Number Publication Date
JPH0818310A true JPH0818310A (en) 1996-01-19

Family

ID=15399364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6146068A Pending JPH0818310A (en) 1994-06-28 1994-06-28 Semiconductor package

Country Status (1)

Country Link
JP (1) JPH0818310A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308478A (en) * 1997-03-05 1998-11-17 Toshiba Corp Semiconductor module
US7504710B2 (en) 2004-06-28 2009-03-17 Mitsubishi Electric Corporation Multilayer dielectric substrate and semiconductor package
JP2010272700A (en) * 2009-05-21 2010-12-02 Mitsubishi Electric Corp Multilayer high-frequency package substrate
JP2016050998A (en) * 2014-08-29 2016-04-11 住友大阪セメント株式会社 Light modulator and optical switch
JP2016050999A (en) * 2014-08-29 2016-04-11 住友大阪セメント株式会社 Light modulator and optical switch

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308478A (en) * 1997-03-05 1998-11-17 Toshiba Corp Semiconductor module
US7504710B2 (en) 2004-06-28 2009-03-17 Mitsubishi Electric Corporation Multilayer dielectric substrate and semiconductor package
US7964937B2 (en) 2004-06-28 2011-06-21 Mitsubishi Electric Corporation Multilayer dielectric substrate and semiconductor package
EP3358670A1 (en) 2004-06-28 2018-08-08 Mitsubishi Electric Corporation Multilayer dielectric substrate and semiconductor package
JP2010272700A (en) * 2009-05-21 2010-12-02 Mitsubishi Electric Corp Multilayer high-frequency package substrate
JP2016050998A (en) * 2014-08-29 2016-04-11 住友大阪セメント株式会社 Light modulator and optical switch
JP2016050999A (en) * 2014-08-29 2016-04-11 住友大阪セメント株式会社 Light modulator and optical switch

Similar Documents

Publication Publication Date Title
US4737742A (en) Unit carrying surface acoustic wave devices
US6476463B1 (en) Microwave integrated circuit multi-chip-module
JPH06505597A (en) Shielding device for non-conductive electronic circuit packages
US4993000A (en) Surface acoustic wave device
JP4492834B2 (en) Electromagnetic wave suppressor
JPH0818310A (en) Semiconductor package
JP3495246B2 (en) Electronic component storage package
JP3086717B2 (en) Circuit board device
CN217214708U (en) Chip packaging structure
US20050012574A1 (en) Device with hybrid microwave circuits shielded by elastic contact members
US8217551B2 (en) Surface acoustic wave package with air hole that prevents thermal expansion
US6864424B2 (en) Electronic component and package
JPH07162181A (en) Method for preventing electromagnetic wave of electronic module from leaking
JPS63110756A (en) Package for transistor
JPH02291140A (en) Ultrahigh-frequency band mounting structure
JP2000100983A (en) Electronic part housing package
JP2002289720A (en) Package for high frequency device
JPH11284482A (en) Multiple-mode crystal resonator
JP3802388B2 (en) High frequency circuit equipment
JP3901458B2 (en) Electronic circuit unit
US20040195683A1 (en) Compact electronic device and package used therefor
JPH06132708A (en) Microwave ic module
JP2005214814A (en) Pressure sensor module
JP2003273704A (en) Surface acoustic wave device and communication equipment using the device
JPS60216697A (en) Ultrasonic ceramic microphone