JPH0818201A - Thick film circuit board and its manufacture - Google Patents
Thick film circuit board and its manufactureInfo
- Publication number
- JPH0818201A JPH0818201A JP14773794A JP14773794A JPH0818201A JP H0818201 A JPH0818201 A JP H0818201A JP 14773794 A JP14773794 A JP 14773794A JP 14773794 A JP14773794 A JP 14773794A JP H0818201 A JPH0818201 A JP H0818201A
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- Prior art keywords
- thick film
- weight
- parts
- circuit board
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は厚膜回路基板及びその製
造方法に係り、特に、高純度アルミナ基板上に銅厚膜法
により導体パターンを形成して高周波回路基板とする厚
膜回路基板及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film circuit board and a method for manufacturing the same, and more particularly to a thick film circuit board for forming a high frequency circuit board by forming a conductor pattern on a high purity alumina board by a copper thick film method. The manufacturing method is related.
【０００２】[0002]
【従来の技術】近年、各種絶縁性セラミックスについ
て、ＩＣやＬＳＩの基板としての用途が開発されてい
る。これらのセラミックスのなかでも、特に、アルミナ
セラミックスは、その電気的特性、機械的特性、熱的特
性等に優れる上に、比較的安価であることから、電子工
業用絶縁性セラミックスの主流を占めている。2. Description of the Related Art In recent years, various insulating ceramics have been developed for use as substrates for ICs and LSIs. Among these ceramics, alumina ceramics, in particular, occupy the mainstream of insulating ceramics for the electronic industry because they are excellent in electrical properties, mechanical properties, thermal properties, etc. and are relatively inexpensive. There is.
【０００３】セラミックスを電子工業用絶縁性基板とし
て用いる場合、導体パターンを形成するために、表面に
金属化膜を形成するメタライズ処理が必要となる。When ceramics is used as an insulating substrate for the electronics industry, a metallizing treatment for forming a metallized film on the surface is required to form a conductor pattern.
【０００４】従来、このメタライズ処理法には、高融点
金属法、同時焼成法、厚膜法、物理蒸着法があり、この
うち、厚膜法は、アルミナ基板上にスクリーン印刷で、
導体パターンを厚膜ペーストにより印刷し、焼成して金
属化膜の電子回路を形成するものである。通常の厚膜ペ
ーストは、約１〜５μｍの粒径を持つ銅等の金属粉末
に、数重量％のガラス粉末を添加し、これらと有機バイ
ンダ，有機溶剤を均一分散させたものである。焼成によ
り得られる金属化膜は、金属化膜と基板との界面付近に
ガラス過剰層が形成され、これによって膜の接着力が生
じる。また、膜表面は金属成分が多いので十分に低い導
通抵抗となり、ハンダ付けも可能となる。Conventionally, the metallizing method includes a refractory metal method, a co-firing method, a thick film method, and a physical vapor deposition method. Among them, the thick film method is screen printing on an alumina substrate.
A conductor pattern is printed with a thick film paste and baked to form an electronic circuit of a metallized film. A normal thick film paste is a powder of metal such as copper having a particle size of about 1 to 5 μm, to which several percent by weight of glass powder is added, and these, an organic binder and an organic solvent are uniformly dispersed. In the metallized film obtained by firing, a glass excess layer is formed in the vicinity of the interface between the metallized film and the substrate, which causes the film to have an adhesive force. In addition, since the film surface contains a large amount of metal components, it has a sufficiently low conduction resistance and soldering is possible.
【０００５】従来、このような厚膜法は、殆どが低周波
回路基板用に用いられ、厚膜法によるメタライズに使用
されるアルミナ基板は、厚膜ペースト内のガラス分と良
く適合するアルミナ含有率９６％程度のものである。Conventionally, such a thick film method is mostly used for a low frequency circuit board, and an alumina substrate used for metallization by the thick film method contains an alumina containing material which is well compatible with the glass content in the thick film paste. The rate is about 96%.
【０００６】ところで、高周波回路基板にはアルミナ含
有率９９．５％以上の高純度アルミナ基板が用いられ、
この場合には物理蒸着法による薄膜回路基板として形成
されるが、このものは、厚膜法による厚膜回路基板より
も高価になるという欠点がある。By the way, a high-purity alumina substrate having an alumina content of 99.5% or more is used for the high-frequency circuit substrate.
In this case, it is formed as a thin film circuit board by the physical vapor deposition method, but this has the drawback that it is more expensive than the thick film circuit board by the thick film method.
【０００７】厚膜法によっても、Ｃｕ厚膜であれば、導
体抵抗が低く、１００μｍ以下のファインパターンも形
成可能であり、マイクロストリップラインやコプレイナ
ウェイブガイドライン，グランデドコプレイナウェイブ
ガイドライン等にすることにより、Ａｕ薄膜導体に匹敵
する性能が得られる。The Cu thick film also has a low conductor resistance and can form a fine pattern of 100 μm or less even by the thick film method, and is used as a microstrip line, a coplanar wave guideline, a granded coplanar wave guideline, or the like. This provides performance comparable to that of Au thin film conductors.
【０００８】従って、アルミナ含有率９９．５％以上の
高純度アルミナ基板に、厚膜法を適用して、回路基板を
形成することができるならば、高性能高周波回路基板を
安価に提供することができるものと考えられる。Therefore, if a thick film method can be applied to a high-purity alumina substrate having an alumina content of 99.5% or more to form a circuit substrate, a high-performance high-frequency circuit substrate can be provided at low cost. It is thought to be possible.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、前述の
如く、厚膜法はアルミナ含有率９６％のアルミナ基板に
適用され、従って、従来、市販されているＣｕ厚膜ペー
ストには、ペーストＱＰ１５３（ＤＵＰＯＮＴ社製）、
ペースト９９２２（ＤＵＰＯＮＴ社製）等があるが、い
ずれも９６％純度のアルミナ基板用に開発されたもので
ある。However, as described above, the thick film method is applied to an alumina substrate having an alumina content of 96%. Therefore, the conventional commercially available Cu thick film paste includes paste QP153 (DUPONT). Company),
Paste 9922 (manufactured by DUPONT Co., Ltd.) and the like are available, but they are all developed for 96% -purity alumina substrates.
【００１０】このような９６％純度のアルミナ基板用に
開発された従来のＣｕ厚膜ペーストをアルミナ含有率９
９．５％以上の高純度アルミナ基板に適用した場合、金
属膜の剥離、ペーストのガラス成分の浸出といった不具
合を生じる。A conventional Cu thick film paste developed for such a 96% pure alumina substrate has an alumina content of 9%.
When applied to a 9.5% or higher high-purity alumina substrate, problems such as peeling of the metal film and leaching of the glass component of the paste occur.
【００１１】例えば、ペーストＱＰ１５３を９９．５％
純度のアルミナ基板に使用すると、形成された金属化膜
（導体パターン）からガラス成分の黄色の浸出物があ
る。For example, paste QP153 is 99.5%
When used on a pure alumina substrate, there is a yellow leaching of the glass component from the formed metallized film (conductor pattern).
【００１２】また、ペースト９９２２を９９．５％純度
のアルミナ基板に使用すると、十分な金属化膜（導体パ
ターン）の接着強度が得られず、大面積の導体パターン
を形成した場合には、その導体パターンの隅角部から剥
離が生じる。これは、アルミナ基板とＣｕパターンとの
熱膨張係数の差により、焼成中にＣｕパターンが収縮し
てアルミナ基板から剥れるためである。Further, when the paste 9922 is used on an alumina substrate having a purity of 99.5%, sufficient adhesive strength of the metallized film (conductor pattern) cannot be obtained, and when a large area conductor pattern is formed, Peeling occurs from the corners of the conductor pattern. This is because the Cu pattern contracts during firing due to the difference in thermal expansion coefficient between the alumina substrate and the Cu pattern, and peels off from the alumina substrate.
【００１３】本発明は上記従来の問題点を解決し、アル
ミナ含有率９９．５％の高純度アルミナ基板に対して
も、導体パターンの剥離やガラス成分の浸出といった不
具合を生じることなく、良好な銅厚膜回路を形成するこ
とができる厚膜回路基板及びその製造方法を提供するこ
とを目的とする。The present invention solves the above-mentioned problems of the prior art, and is suitable for a high-purity alumina substrate having an alumina content of 99.5% without causing problems such as peeling of a conductor pattern and leaching of a glass component. An object of the present invention is to provide a thick film circuit board capable of forming a copper thick film circuit and a manufacturing method thereof.
【００１４】[0014]
【課題を解決するための手段】請求項１の厚膜回路基板
は、セラミックス基板に導体成分とガラス成分とを含む
厚膜ペーストを塗布した後焼成することにより、導体パ
ターンを形成してなる厚膜回路基板において、該導体パ
ターンは、ガラス成分中のＰｂＯ含有量が比較的少ない
第１の厚膜ペーストと、ガラス成分中のＰｂＯ含有量が
比較的多い第２の厚膜ペーストとの２種類の厚膜ペース
トにより形成されており、 該第１の厚膜ペーストによ
り前記セラミックス基板上に第１層目の導体パターンが
形成されており、かつ、該第２の厚膜ペーストにより、
該第１層目の導体パターンの少なくとも隅角部を被覆す
る第２層目の導体パターンが形成されていることを特徴
とする。A thick film circuit board according to a first aspect of the present invention is formed by applying a thick film paste containing a conductor component and a glass component to a ceramic substrate and baking the paste to form a conductor pattern. In the membrane circuit board, there are two types of conductor patterns, a first thick film paste having a relatively low PbO content in the glass component and a second thick film paste having a relatively high PbO content in the glass component. Of the first thick film paste, a first-layer conductor pattern is formed on the ceramic substrate by the first thick film paste, and the second thick film paste is formed by:
A second-layer conductor pattern covering at least a corner portion of the first-layer conductor pattern is formed.
【００１５】請求項２の厚膜回路基板は、請求項１の厚
膜回路基板において、第１の厚膜ペーストが、導体成分
であるＣｕ１００重量部に対してガラス成分を３〜５重
量部含み、ガラス成分中の各酸化物のＣｕ１００重量部
に対する含有割合がＰｂＯ：０．１〜０．７重量部、Ｓ
ｉＯ2 ：０．１〜０．７重量部、Ｂ2 Ｏ3 ：０．１〜
０．７重量部、Ｂｉ2 Ｏ3 ：２〜３．５重量部で実質的
にＷＯ3 を含有しないものであり、第２の厚膜ペースト
が、導体成分であるＣｕ１００重量部に対してガラス成
分を３〜５重量部含み、ガラス成分中の各酸化物のＣｕ
１００重量部に対する含有割合がＰｂＯ：１．５〜３．
５重量部、ＳｉＯ2 ：０．１〜０．７重量部、ＣｄＯ：
０．１〜０．７重量部、Ｂ2 Ｏ3 ：０．１〜０．７重量
部で実質的にＢｉ2 Ｏ3 を含有しないものであることを
特徴とする。A thick film circuit board according to a second aspect is the thick film circuit board according to the first aspect, wherein the first thick film paste contains 3 to 5 parts by weight of a glass component with respect to 100 parts by weight of Cu which is a conductor component. , The content ratio of each oxide in the glass component with respect to 100 parts by weight of Cu is PbO: 0.1 to 0.7 parts by weight, S
iO 2: 0.1 to 0.7 parts by weight, B 2 O 3: 0.1~
0.7 parts by weight, Bi 2 O 3 : 2 to 3.5 parts by weight and substantially no WO 3 , and the second thick film paste is glass with respect to 100 parts by weight of Cu, which is a conductor component. 3 to 5 parts by weight of the component, Cu of each oxide in the glass component
The content ratio with respect to 100 parts by weight is PbO: 1.5 to 3.
5 parts by weight, SiO 2 : 0.1 to 0.7 parts by weight, CdO:
0.1 to 0.7 parts by weight, B 2 O 3: characterized in that in 0.1 to 0.7 parts by weight but contains substantially no Bi 2 O 3.
【００１６】請求項３の厚膜回路基板は、請求項１又は
２の厚膜回路基板において、セラミックス基板がアルミ
ナ含有率９９．５％以上の高純度アルミナ基板であり、
厚膜ペーストが金属粉末として銅粉末を含有するもので
あることを特徴とする。A thick film circuit board according to claim 3 is the thick film circuit board according to claim 1 or 2, wherein the ceramics substrate is a high-purity alumina substrate having an alumina content of 99.5% or more,
The thick film paste is characterized in that it contains copper powder as the metal powder.
【００１７】請求項４の厚膜回路基板は、請求項１ない
し３のいずれか１項の厚膜回路基板において、第２層目
の導体パターンは、第１層目の導体パターンの全面を被
覆するように形成されていることを特徴とする。A thick film circuit board according to claim 4 is the thick film circuit board according to any one of claims 1 to 3, wherein the second-layer conductor pattern covers the entire surface of the first-layer conductor pattern. It is characterized in that it is formed.
【００１８】請求項５の厚膜回路基板は、請求項１ない
し３のいずれか１項の厚膜回路基板において、第２層目
の導体パターンは、第１層目の導体パターンの周縁部の
みを被覆するように形成されていることを特徴とする。A thick film circuit board according to a fifth aspect is the thick film circuit board according to any one of the first to third aspects, in which the conductor pattern of the second layer is only a peripheral portion of the conductor pattern of the first layer. It is characterized in that it is formed so as to cover.
【００１９】請求項６の厚膜回路基板は、請求項１ない
し３のいずれか１項の厚膜回路基板において、第２層目
の導体パターンは、第１層目の導体パターンの隅角部の
みを被覆するように形成されていることを特徴とする。A thick film circuit board according to a sixth aspect is the thick film circuit board according to any one of the first to third aspects, wherein the conductor pattern of the second layer is a corner portion of the conductor pattern of the first layer. It is characterized in that it is formed so as to cover only.
【００２０】請求項７の厚膜回路基板の製造方法は、セ
ラミックス基板に導体成分とガラス成分とを含む厚膜ペ
ーストを塗布した後焼成することにより、導体パターン
を形成する厚膜回路基板の製造方法において、該厚膜ペ
ーストとして、ガラス成分中のＰｂＯ含有量が比較的少
ない第１の厚膜ペーストと、ガラス成分中のＰｂＯ含有
量が比較的多い第２の厚膜ペーストとの２種類の厚膜ペ
ーストを用い、該第１の厚膜ペーストを塗布して前記セ
ラミックス基板上に第１層目の導体パターンに倣う第１
の塗布部を形成した後、該第２の厚膜ペーストを該第１
の塗布部の少なくとも隅角部を被覆するように塗布する
ことを特徴とする。According to a seventh aspect of the present invention, there is provided a method of manufacturing a thick film circuit board in which a conductor pattern is formed by applying a thick film paste containing a conductor component and a glass component onto a ceramic substrate and then firing the paste. In the method, there are two types of thick film pastes, a first thick film paste having a relatively low PbO content in the glass component and a second thick film paste having a relatively high PbO content in the glass component. A first thick film paste is applied and the first thick film paste is applied to copy the first layer conductor pattern onto the ceramic substrate.
Of the first thick film paste is formed on the first thick film paste.
The coating is applied so as to cover at least the corners of the coating part.
【００２１】請求項８の厚膜回路基板の製造方法は、請
求項７の方法において、第１の厚膜ペーストが、導体成
分であるＣｕ１００重量部に対してガラス成分を３〜５
重量部含み、ガラス成分中の各酸化物のＣｕ１００重量
部に対する含有割合がＰｂＯ：０．１〜０．７重量部、
ＳｉＯ2 ：０．１〜０．７重量部、Ｂ2 Ｏ3 ：０．１〜
０．７重量部、Ｂｉ2 Ｏ3 ：２〜３．５重量部で実質的
にＷＯ3 を含有しないものであり、第２の厚膜ペースト
が、導体成分であるＣｕ１００重量部に対してガラス成
分を３〜５重量部含み、ガラス成分中の各酸化物のＣｕ
１００重量部に対する含有割合がＰｂＯ：１．５〜３．
５重量部、ＳｉＯ2 ：０．１〜０．７重量部、ＣｄＯ：
０．１〜０．７重量部、Ｂ2 Ｏ3 ：０．１〜０．７重量
部で実質的にＢｉ2 Ｏ3 を含有しないものであることを
特徴とする。The thick film circuit board manufacturing method of claim 8 is the method of claim 7, wherein the first thick film paste contains 3 to 5 glass components with respect to 100 parts by weight of Cu which is a conductor component.
By weight, the content ratio of each oxide in the glass component to Cu 100 parts by weight is PbO: 0.1 to 0.7 parts by weight,
SiO 2: 0.1 to 0.7 parts by weight, B 2 O 3: 0.1~
0.7 parts by weight, Bi 2 O 3 : 2 to 3.5 parts by weight and substantially no WO 3 , and the second thick film paste is glass with respect to 100 parts by weight of Cu, which is a conductor component. 3 to 5 parts by weight of the component, Cu of each oxide in the glass component
The content ratio with respect to 100 parts by weight is PbO: 1.5 to 3.
5 parts by weight, SiO 2 : 0.1 to 0.7 parts by weight, CdO:
0.1 to 0.7 parts by weight, B 2 O 3: characterized in that in 0.1 to 0.7 parts by weight but contains substantially no Bi 2 O 3.
【００２２】請求項９の厚膜回路基板の製造方法は、請
求項７又は８の方法において、セラミックス基板がアル
ミナ含有率９９．５％以上の高純度アルミナ基板であ
り、厚膜ペーストが金属粉末として銅粉末を含有するも
のであることを特徴とする。The method for manufacturing a thick film circuit board according to claim 9 is the method according to claim 7 or 8, wherein the ceramic substrate is a high purity alumina substrate having an alumina content of 99.5% or more, and the thick film paste is a metal powder. It is characterized by containing copper powder as.
【００２３】請求項１０の厚膜回路基板の製造方法は、
請求項７ないし９のいずれか１項の方法において、第２
の厚膜ペーストを第１の塗布部の全面を被覆するように
塗布することを特徴とする。A method of manufacturing a thick film circuit board according to claim 10 is
A method according to any one of claims 7 to 9 wherein the second
The thick film paste is applied so as to cover the entire surface of the first application portion.
【００２４】請求項１１の厚膜回路基板の製造方法は、
請求項７ないし９のいずれか１項の方法において、第２
の厚膜ペーストを第１の塗布部の周縁部のみを被覆する
ように塗布することを特徴とする。A method of manufacturing a thick film circuit board according to claim 11 is
A method according to any one of claims 7 to 9 wherein the second
The thick film paste is applied so as to cover only the peripheral portion of the first application portion.
【００２５】請求項１２の厚膜回路基板の製造方法は、
請求項７ないし９のいずれか１項の方法において、第２
の厚膜ペーストを第１の塗布部の隅角部のみを被覆する
ように塗布することを特徴とする。A method of manufacturing a thick film circuit board according to claim 12 is as follows:
A method according to any one of claims 7 to 9 wherein the second
The thick film paste is applied so as to cover only the corner portion of the first application portion.
【００２６】以下に図面を参照して本発明を詳細に説明
する。The present invention will be described in detail below with reference to the drawings.
【００２７】図１，図２及び図３は、本発明の厚膜回路
基板の製造方法の実施例を示す平面図である。FIGS. 1, 2 and 3 are plan views showing an embodiment of the method for manufacturing a thick film circuit board according to the present invention.
【００２８】本発明の厚膜回路基板を製造するには、ま
ず、高純度アルミナ基板１等のセラミックス基板上に、
ガラス成分中のＰｂＯ含有量が比較的少ない第１の厚膜
ペースト２を塗布印刷して第１の塗布部を形成した後乾
燥し、次いで、ガラス成分中のＰｂＯ含有量が比較的多
い第２の厚膜ペースト３を、 図１に示す如く、第１の塗布部の全面を被覆するよ
うに、或いは 図２に示す如く、第１の塗布部の周縁部のみを被覆
するように、或いは 図３に示す如く、第１の塗布部の隅角部のみを被覆
するように 塗布印刷した後乾燥し、その後焼成する。In order to manufacture the thick film circuit board of the present invention, first, on a ceramic substrate such as the high-purity alumina substrate 1,
The first thick film paste 2 having a relatively low PbO content in the glass component is applied and printed to form a first application portion, and then dried, and then the second thick film paste having a relatively high PbO content in the glass component is used. Thick film paste 3 as shown in FIG. 1 so as to cover the entire surface of the first coating portion, or as shown in FIG. 2 so as to cover only the peripheral portion of the first coating portion, or As shown in FIG. 3, coating and printing are performed so as to cover only the corners of the first coating portion, followed by drying and firing.
【００２９】なお、焼成は上記の如く、第１の厚膜ペー
ストの塗布部と第２の厚膜ペーストの塗布部とを同時に
行なうものであっても良く、第１の厚膜ペーストを塗布
した後乾燥、焼成し、その後第２の厚膜ペーストを塗布
した後乾燥、焼成しても良い。As described above, the firing may be performed simultaneously with the first thick film paste application portion and the second thick film paste application portion, and the first thick film paste is applied. Post-drying and firing may be performed, and then the second thick film paste may be applied and then drying and firing.
【００３０】この厚膜ペーストの塗布方法、乾燥、焼成
条件等は従来と同様のものを採用することができる。The thick film paste application method, drying, firing conditions and the like may be the same as those in the prior art.
【００３１】また、第２の厚膜ペーストの塗布範囲は、
形成する導体パターンの面積が小さい場合には、図１に
示す如く、第１の塗布部の全面を被覆するような範囲と
するのが好ましく、形成する導体パターンが大面積があ
る場合には、図２に示す如く第１の塗布部の周縁部の
み、或いは、図３に示す如く第１の塗布部の隅角部のみ
被覆するような範囲とするのが好ましい。The application range of the second thick film paste is
When the area of the conductor pattern to be formed is small, as shown in FIG. 1, it is preferable to set the range so as to cover the entire surface of the first application portion. When the conductor pattern to be formed has a large area, It is preferable to set the range so as to cover only the peripheral portion of the first coating portion as shown in FIG. 2 or only the corner portion of the first coating portion as shown in FIG.
【００３２】即ち、導体パターンの剥離は、導体パター
ンの縁部で生じるため、第１の塗布部の周縁部或いは隅
角部のみを第２の厚膜ペーストで被覆することによって
も、十分な剥離防止効果を得ることができる。That is, since the peeling of the conductor pattern occurs at the edge portion of the conductor pattern, sufficient peeling can be achieved by coating only the peripheral portion or the corner portion of the first coating portion with the second thick film paste. A preventive effect can be obtained.
【００３３】なお、図２に示す如く、第１の塗布部の周
縁部のみを第２の厚膜ペーストで被覆する場合、その被
覆する周縁部の幅Ｗは、第１の塗布部の大きさによって
も異なるが、通常の場合、０．５〜１０ｍｍ程度とされ
る。As shown in FIG. 2, when only the peripheral portion of the first coating portion is coated with the second thick film paste, the width W of the peripheral portion to be coated is the size of the first coating portion. Depending on the value, it is usually set to about 0.5 to 10 mm.
【００３４】また、図３に示す如く、第１の塗布部の隅
角部のみを第２の厚膜ペーストで被覆する場合、その被
覆する隅角部の大きさは、第１の塗布部の大きさによっ
ても異なるが、通常の場合、図３において、幅Ｗが０．
５〜１０ｍｍ，長さａ，ｂが１〜２０ｍｍとなるように
するのが好ましい。Further, as shown in FIG. 3, when only the corner portions of the first coating portion are coated with the second thick film paste, the size of the coating corner portion is the same as that of the first coating portion. Although it depends on the size, in the normal case, the width W is 0.
It is preferable that the length is 5 to 10 mm and the lengths a and b are 1 to 20 mm.
【００３５】本発明において使用する第１の厚膜ペース
ト及び第２の厚膜ペーストのガラス成分含有量やガラス
成分組成については特に制限はないが、第１の厚膜ペー
ストとしては、導体成分であるＣｕ１００重量部に対し
てガラス成分を３〜５重量部含み、ガラス成分中の各酸
化物のＣｕ１００重量部に対する含有割合がＰｂＯ：
０．１〜０．７重量部、ＳｉＯ2 ：０．１〜０．７重量
部、Ｂ2 Ｏ3 ：０．１〜０．７重量部、Ｂｉ2 Ｏ3 ：２
〜３．５重量部で実質的にＷＯ3 を含有しないものが好
ましい。また、第２の厚膜ペーストとしては、導体成分
であるＣｕ１００重量部に対してガラス成分を３〜５重
量部含み、ガラス成分中の各酸化物のＣｕ１００重量部
に対する含有割合がＰｂＯ：１．５〜３．５重量部、Ｓ
ｉＯ2 ：０．１〜０．７重量部、ＣｄＯ：０．１〜０．
７重量部、Ｂ2 Ｏ3 ：０．１〜０．７重量部で実質的に
Ｂｉ2 Ｏ3 を含有しないものが好ましい。There is no particular limitation on the glass component content and the glass component composition of the first thick film paste and the second thick film paste used in the present invention, but the first thick film paste is a conductor component. A glass component is contained in an amount of 3 to 5 parts by weight with respect to a certain Cu 100 parts by weight, and the content ratio of each oxide in the glass component with respect to 100 parts by weight of Cu is PbO:
0.1 to 0.7 parts by weight, SiO 2: 0.1 to 0.7 parts by weight, B 2 O 3: 0.1~0.7 parts by weight, Bi 2 O 3: 2
It is preferably about 3.5 parts by weight and substantially free of WO 3 . The second thick film paste contains 3 to 5 parts by weight of a glass component with respect to 100 parts by weight of Cu as a conductor component, and the content ratio of each oxide in the glass component with respect to 100 parts by weight of Cu is PbO: 1. 5 to 3.5 parts by weight, S
iO 2: 0.1~0.7 parts by weight, CdO: 0.1~0.
7 parts by weight, B 2 O 3: it is preferable to contain substantially no Bi 2 O 3 in 0.1 to 0.7 parts by weight.
【００３６】このような本発明の厚膜回路基板及びその
製造方法は、アルミナ含有率９９．５％以上の高純度ア
ルミナ基板を用い、Ｃｕ厚膜ペーストにより高周波厚膜
回路基板を製造する場合に極めて有用である。The thick film circuit board and the method of manufacturing the same according to the present invention are used when a high frequency thick film circuit board is manufactured using a Cu thick film paste by using a high purity alumina substrate having an alumina content of 99.5% or more. Extremely useful.
【００３７】[0037]
【作用】厚膜ペーストで形成される導体パターンの基板
との剥離又はガラス成分の浸出は、用いる厚膜ペースト
のガラス成分中のＰｂＯ含有量に関係する。The peeling of the conductor pattern formed by the thick film paste from the substrate or the leaching of the glass component is related to the PbO content in the glass component of the thick film paste used.
【００３８】即ち、厚膜ペーストのうち、ガラス成分中
のＰｂＯ含有量の少ないもので形成された導体パターン
は、ガラス成分の浸出については問題はないが、高純度
アルミナ基板との剥離の問題がある。一方、ガラス成分
中のＰｂＯ含有量の多い厚膜ペーストは、上記剥離の問
題はないが、ガラス成分の浸出の問題がある。That is, in the thick film paste, the conductor pattern formed of the one containing a small amount of PbO in the glass component has no problem in leaching of the glass component, but has a problem of separation from the high-purity alumina substrate. is there. On the other hand, the thick film paste containing a large amount of PbO in the glass component does not have the above-mentioned problem of peeling, but has a problem of leaching of the glass component.
【００３９】本発明においては、ガラス成分中のＰｂＯ
含有量が比較的少ない第１の厚膜ペーストと、ガラス成
分中のＰｂＯ含有量が比較的多い第２の厚膜ペーストと
を用い、第２の厚膜ペーストで、第１の厚膜ペーストに
よる塗布部の少なくとも隅角部を覆うようにすることに
より、基板上に塗布された第１の厚膜ペーストと、第２
の厚膜ペーストが、焼成中ないし焼成後において混合さ
れて、基板に適合した、基板との接着強度の高い導体パ
ターンを形成し、導体パターンの剥離やガラス成分の浸
出は防止される。In the present invention, PbO in the glass component is used.
The first thick film paste having a relatively low content and the second thick film paste having a relatively high PbO content in the glass component are used to form the second thick film paste by the first thick film paste. By covering at least the corners of the coating portion, the first thick film paste coated on the substrate and the second thick film paste are coated.
The thick film paste of (1) is mixed during or after firing to form a conductor pattern suitable for the substrate and having high adhesive strength with the substrate, and peeling of the conductor pattern and leaching of the glass component are prevented.
【００４０】請求項２，８によれば、上記効果をより一
層確実に得ることができる。According to the second and eighth aspects, the above effects can be obtained more reliably.
【００４１】請求項３，９によれば、高特性かつ安価な
高周波厚膜回路基板が提供される。According to claims 3 and 9, a high-frequency and thick high-frequency thick film circuit board is provided.
【００４２】[0042]
【実施例】以下に実施例及び比較例を挙げて本発明をよ
り具体的に説明する。EXAMPLES The present invention will be described more specifically with reference to Examples and Comparative Examples below.
【００４３】なお、用いたＣｕ厚膜ペーストの組成は下
記表１の通りである。The composition of the Cu thick film paste used is as shown in Table 1 below.
【００４４】[0044]
【表１】 [Table 1]
【００４５】実施例１ 図１に示す方法に従って、厚膜回路基板を製造した。Example 1 A thick film circuit board was manufactured according to the method shown in FIG.
【００４６】アルミナ含有率９９．５％以上の高純度ア
ルミナ基板（９５ｍｍ×１１４ｍｍ×厚さ０．６３５ｍ
ｍ）の一方の面に、第１のＣｕ厚膜ペーストを７０×９
０ｍｍ，乾燥後の厚さ２５μｍにベタパターンで印刷し
た後、１２０℃で１０分間乾燥した。A high-purity alumina substrate having an alumina content of 99.5% or more (95 mm × 114 mm × thickness 0.635 m)
m) one side of the first Cu thick film paste 70 × 9
After printing with a solid pattern at 0 mm and a thickness of 25 μm after drying, it was dried at 120 ° C. for 10 minutes.
【００４７】次いで、第２のＣｕ厚膜ペーストで上記塗
布部に重なるように７０ｍｍ×９０ｍｍ，乾燥後の厚さ
２５μｍに印刷した後、１２０℃で１０分間乾燥した。Next, the second Cu thick film paste was printed on the coated portion to a size of 70 mm × 90 mm and a thickness after drying of 25 μm, and then dried at 120 ° C. for 10 minutes.
【００４８】その後、アルミナ基板の他方の面に第１の
Ｃｕ厚膜ペーストで配線パターンを印刷し、１２０℃で
１０分間乾燥した後、窒素雰囲気中、９００℃で６０分
間基板両面を同時焼成した。Then, a wiring pattern was printed on the other surface of the alumina substrate with the first Cu thick film paste, dried at 120 ° C. for 10 minutes, and then simultaneously baked on both sides of the substrate at 900 ° C. for 60 minutes in a nitrogen atmosphere. .
【００４９】得られた厚膜回路基板は、導体パターンか
らのガラス成分の浸出もなく、また、導体パターンの剥
離もなく、良好な導体パターンが形成されていた。In the thick film circuit board obtained, a good conductor pattern was formed without leaching of the glass component from the conductor pattern and peeling of the conductor pattern.
【００５０】実施例２ 図２に示す方法に従って、厚膜回路基板を製造した。Example 2 A thick film circuit board was manufactured according to the method shown in FIG.
【００５１】即ち、第２のＣｕ厚膜ペーストを第１のＣ
ｕ厚膜ペーストの塗布部の周縁部にのみ重なるように幅
Ｗ＝１０ｍｍ，乾燥後の厚さ２５μｍに印刷したこと以
外は実施例１と同様にして厚膜回路基板を製造した。That is, the second Cu thick film paste is replaced with the first C thick film paste.
A thick film circuit board was manufactured in the same manner as in Example 1 except that printing was performed with a width W of 10 mm and a thickness after drying of 25 μm so as to overlap only the peripheral portion of the u thick film paste application portion.
【００５２】得られた厚膜回路基板は、導体パターンか
らのガラス成分の浸出もなく、また、導体パターンの剥
離もなく、良好な導体パターンが形成されていた。In the thick film circuit board obtained, a good conductor pattern was formed without leaching of the glass component from the conductor pattern and peeling of the conductor pattern.
【００５３】実施例３ 図３に示す方法に従って、厚膜回路基板を製造した。Example 3 A thick film circuit board was manufactured according to the method shown in FIG.
【００５４】即ち、第２のＣｕ厚膜ペーストを第１のＣ
ｕ厚膜ペーストの塗布部の隅角部にのみ重なるように幅
Ｗ＝１０ｍｍ，ａ＝２０ｍｍ，ｂ＝２０ｍｍ，乾燥後の
厚さ２５μｍに印刷したこと以外は実施例１と同様にし
て厚膜回路基板を製造した。That is, the second Cu thick film paste is added to the first C
u Thick film was printed in the same manner as in Example 1 except that the width W = 10 mm, a = 20 mm, b = 20 mm, and the thickness after drying 25 μm were printed so as to overlap only the corners of the application portion of the thick film paste. A circuit board was manufactured.
【００５５】得られた厚膜回路基板は、導体パターンか
らのガラス成分の浸出もなく、また、導体パターンの剥
離もなく、良好な導体パターンが形成されていた。In the obtained thick film circuit board, a good conductor pattern was formed without leaching of the glass component from the conductor pattern and peeling of the conductor pattern.
【００５６】比較例１ 実施例１において、第２のＣｕ厚膜ペーストを用いなか
ったこと以外は同様にして厚膜回路基板を製造した。Comparative Example 1 A thick film circuit board was manufactured in the same manner as in Example 1 except that the second Cu thick film paste was not used.
【００５７】その結果、得られた厚膜回路基板は、図４
に示す如く、導体パターン４の隅角部において、アルミ
ナ基板１から剥離が生じ、製品とし得なかった。As a result, the thick film circuit board obtained is shown in FIG.
As shown in FIG. 5, peeling occurred from the alumina substrate 1 at the corners of the conductor pattern 4, and the product could not be manufactured.
【００５８】比較例２ 実施例１において、第１のＣｕ厚膜ペーストを用いなか
ったこと以外は同様にして厚膜回路基板を製造した。Comparative Example 2 A thick film circuit board was manufactured in the same manner as in Example 1 except that the first Cu thick film paste was not used.
【００５９】その結果、得られた厚膜回路基板は、導体
パターンから黄色いガラス成分の浸出がみられ、製品と
し得なかった。As a result, the thick film circuit board thus obtained could not be manufactured as a product because the yellow glass component was leached from the conductor pattern.
【００６０】[0060]
【発明の効果】以上詳述した通り、本発明の厚膜回路基
板及びその製造方法によれば、導体パターンの剥離やガ
ラス成分の浸出の問題を生じることなく、厚膜法により
良好な導体パターンを形成して、高特性高周波厚膜回路
基板を安価に提供することができる。As described in detail above, according to the thick film circuit board and the method for manufacturing the same of the present invention, a good conductor pattern can be obtained by the thick film method without causing the problem of peeling of the conductor pattern or leaching of the glass component. And a high-characteristic high-frequency thick film circuit board can be provided at low cost.
【００６１】本発明の厚膜回路基板及びその製造方法
は、特に、アルミナ含有率９９．５％以上の高純度アル
ミナ基板上に広い面積のＣｕ厚膜導体パターンを形成し
て高周波回路基板とする場合に極めて有用である。In the thick film circuit board and the method for manufacturing the same according to the present invention, in particular, a Cu thick film conductor pattern having a large area is formed on a high purity alumina substrate having an alumina content of 99.5% or more to obtain a high frequency circuit board. Very useful in some cases.
【図１】本発明の厚膜回路基板の製造方法の一実施例方
法を示す平面図である。FIG. 1 is a plan view showing a method of an embodiment of a method of manufacturing a thick film circuit board according to the present invention.
【図２】本発明の厚膜回路基板の製造方法の他の実施例
方法を示す平面図である。FIG. 2 is a plan view showing another embodiment method of the method for manufacturing a thick film circuit board according to the present invention.
【図３】本発明の厚膜回路基板の製造方法の別の実施例
方法を示す平面図である。FIG. 3 is a plan view showing a method of another embodiment of the method for manufacturing a thick film circuit board according to the present invention.
【図４】従来法による導体パターンの剥離状況を示す平
面図である。FIG. 4 is a plan view showing a peeling state of a conductor pattern by a conventional method.
１ アルミナ基板 ２ 第１の厚膜ペースト ３ 第２の厚膜ペースト 1 Alumina Substrate 2 First Thick Film Paste 3 Second Thick Film Paste
Claims (12)
分とを含む厚膜ペーストを塗布した後焼成することによ
り、導体パターンを形成してなる厚膜回路基板におい
て、 該導体パターンは、ガラス成分中のＰｂＯ含有量が比較
的少ない第１の厚膜ペーストと、ガラス成分中のＰｂＯ
含有量が比較的多い第２の厚膜ペーストとの２種類の厚
膜ペーストにより形成されており、 該第１の厚膜ペーストにより前記セラミックス基板上に
第１層目の導体パターンが形成されており、かつ、該第
２の厚膜ペーストにより、該第１層目の導体パターンの
少なくとも隅角部を被覆する第２層目の導体パターンが
形成されていることを特徴とする厚膜回路基板。1. A thick film circuit board in which a conductor pattern is formed by applying a thick film paste containing a conductor component and a glass component onto a ceramic substrate and then firing the paste, wherein the conductor pattern is First thick film paste with a relatively low PbO content and PbO in the glass component
It is formed of two types of thick film pastes, the second thick film paste having a relatively high content, and the first thick film paste forms a first-layer conductor pattern on the ceramic substrate. And a second-layer conductor pattern covering at least a corner portion of the first-layer conductor pattern is formed by the second thick-film paste. .
の厚膜ペーストが、導体成分であるＣｕ１００重量部に
対してガラス成分を３〜５重量部含み、ガラス成分中の
各酸化物のＣｕ１００重量部に対する含有割合がＰｂ
Ｏ：０．１〜０．７重量部、ＳｉＯ2 ：０．１〜０．７
重量部、Ｂ2 Ｏ3 ：０．１〜０．７重量部、Ｂｉ2 Ｏ
3 ：２〜３．５重量部で実質的にＷＯ3 を含有しないも
のであり、第２の厚膜ペーストが、導体成分であるＣｕ
１００重量部に対してガラス成分を３〜５重量部含み、
ガラス成分中の各酸化物のＣｕ１００重量部に対する含
有割合がＰｂＯ：１．５〜３．５重量部、ＳｉＯ2 ：
０．１〜０．７重量部、ＣｄＯ：０．１〜０．７重量
部、Ｂ2 Ｏ3 ：０．１〜０．７重量部で実質的にＢｉ2
Ｏ3 を含有しないものであることを特徴とする厚膜回路
基板。2. The thick film circuit board according to claim 1, wherein
Thick film paste contains 3 to 5 parts by weight of a glass component with respect to 100 parts by weight of Cu as a conductor component, and the content ratio of each oxide in the glass component with respect to 100 parts by weight of Cu is Pb.
O: 0.1 to 0.7 parts by weight, SiO 2 : 0.1 to 0.7
Parts by weight, B 2 O 3 : 0.1 to 0.7 parts by weight, Bi 2 O
3: 2-3.5 are those containing substantially no WO 3 parts by weight, the second thick film paste is a conductor component Cu
3 to 5 parts by weight of glass component per 100 parts by weight,
The content ratio of each oxide in the glass component with respect to 100 parts by weight of Cu is PbO: 1.5 to 3.5 parts by weight, SiO 2 :
0.1 to 0.7 parts by weight, CdO: 0.1 to 0.7 parts by weight, B 2 O 3 : 0.1 to 0.7 parts by weight and substantially Bi 2
A thick film circuit board which does not contain O 3 .
て、セラミックス基板がアルミナ含有率９９．５％以上
の高純度アルミナ基板であり、厚膜ペーストが金属粉末
として銅粉末を含有するものであることを特徴とする厚
膜回路基板。3. The thick film circuit board according to claim 1 or 2, wherein the ceramic substrate is a high purity alumina substrate having an alumina content of 99.5% or more, and the thick film paste contains copper powder as metal powder. A thick film circuit board characterized by being present.
回路基板において、第２層目の導体パターンは、第１層
目の導体パターンの全面を被覆するように形成されてい
ることを特徴とする厚膜回路基板。4. The thick film circuit board according to claim 1, wherein the second layer conductor pattern is formed so as to cover the entire surface of the first layer conductor pattern. A thick film circuit board.
回路基板において、第２層目の導体パターンは、第１層
目の導体パターンの周縁部のみを被覆するように形成さ
れていることを特徴とする厚膜回路基板。5. The thick film circuit board according to claim 1, wherein the second-layer conductor pattern is formed so as to cover only a peripheral portion of the first-layer conductor pattern. A thick film circuit board characterized in that
回路基板において、第２層目の導体パターンは、第１層
目の導体パターンの隅角部のみを被覆するように形成さ
れていることを特徴とする厚膜回路基板。6. The thick film circuit board according to claim 1, wherein the conductor pattern of the second layer is formed so as to cover only a corner portion of the conductor pattern of the first layer. A thick film circuit board characterized in that.
分とを含む厚膜ペーストを塗布した後焼成することによ
り、導体パターンを形成する厚膜回路基板の製造方法に
おいて、 該厚膜ペーストとして、ガラス成分中のＰｂＯ含有量が
比較的少ない第１の厚膜ペーストと、ガラス成分中のＰ
ｂＯ含有量が比較的多い第２の厚膜ペーストとの２種類
の厚膜ペーストを用い、 該第１の厚膜ペーストを塗布して前記セラミックス基板
上に第１層目の導体パターンに倣う第１の塗布部を形成
した後、該第２の厚膜ペーストを該第１の塗布部の少な
くとも隅角部を被覆するように塗布することを特徴とす
る厚膜回路基板の製造方法。7. A method of manufacturing a thick film circuit board in which a conductor pattern is formed by applying a thick film paste containing a conductor component and a glass component to a ceramic substrate and then firing the paste, wherein a glass component is used as the thick film paste. First thick film paste with a relatively low PbO content and P in the glass component
Two types of thick film pastes, a second thick film paste having a relatively high bO content, are used, and the first thick film paste is applied to imitate the conductor pattern of the first layer on the ceramic substrate. A method of manufacturing a thick film circuit board, comprising forming the first coating portion and then coating the second thick film paste so as to cover at least a corner portion of the first coating portion.
ーストが、導体成分であるＣｕ１００重量部に対してガ
ラス成分を３〜５重量部含み、ガラス成分中の各酸化物
のＣｕ１００重量部に対する含有割合がＰｂＯ：０．１
〜０．７重量部、ＳｉＯ2 ：０．１〜０．７重量部、Ｂ
2 Ｏ3 ：０．１〜０．７重量部、Ｂｉ2 Ｏ3 ：２〜３．
５重量部で実質的にＷＯ3 を含有しないものであり、第
２の厚膜ペーストが、導体成分であるＣｕ１００重量部
に対してガラス成分を３〜５重量部含み、ガラス成分中
の各酸化物のＣｕ１００重量部に対する含有割合がＰｂ
Ｏ：１．５〜３．５重量部、ＳｉＯ2 ：０．１〜０．７
重量部、ＣｄＯ：０．１〜０．７重量部、Ｂ2 Ｏ3 ：
０．１〜０．７重量部で実質的にＢｉ2 Ｏ3 を含有しな
いものであることを特徴とする厚膜回路基板の製造方
法。8. The method according to claim 7, wherein the first thick film paste contains 3 to 5 parts by weight of a glass component with respect to 100 parts by weight of Cu which is a conductor component, and 100 parts by weight of Cu of each oxide in the glass component. Content of PbO: 0.1
0.7 parts by weight, SiO 2: 0.1 to 0.7 parts by weight, B
2 O 3 : 0.1 to 0.7 parts by weight, Bi 2 O 3 : 2 to 3.
5 parts by weight are those containing substantially no WO 3, the second thick film paste comprises 3 to 5 parts by weight of a glass component with respect Cu100 parts by weight of conductive components, each oxide in the glass component Content of Pb is 100% by weight of Cu
O: 1.5 to 3.5 parts by weight, SiO 2 : 0.1 to 0.7
Parts by weight, CdO: 0.1 to 0.7 parts by weight, B 2 O 3 :
A method for producing a thick film circuit board, characterized in that it is 0.1 to 0.7 parts by weight and does not substantially contain Bi 2 O 3 .
ックス基板がアルミナ含有率９９．５％以上の高純度ア
ルミナ基板であり、厚膜ペーストが金属粉末として銅粉
末を含有するものであることを特徴とする厚膜回路基板
の製造方法。9. The method according to claim 7 or 8, wherein the ceramic substrate is a high-purity alumina substrate having an alumina content of 99.5% or more, and the thick film paste contains copper powder as metal powder. A method of manufacturing a thick film circuit board characterized by the above.
法において、第２の厚膜ペーストを第１の塗布部の全面
を被覆するように塗布することを特徴とする厚膜回路基
板の製造方法。10. The thick film circuit board according to claim 7, wherein the second thick film paste is applied so as to cover the entire surface of the first application portion. Production method.
法において、第２の厚膜ペーストを第１の塗布部の周縁
部のみを被覆するように塗布することを特徴とする厚膜
回路基板の製造方法。11. The thick film circuit according to claim 7, wherein the second thick film paste is applied so as to cover only a peripheral portion of the first applying portion. Substrate manufacturing method.
法において、第２の厚膜ペーストを第１の塗布部の隅角
部のみを被覆するように塗布することを特徴とする厚膜
回路基板の製造方法。12. The thick film according to claim 7, wherein the second thick film paste is applied so as to cover only a corner portion of the first application portion. Circuit board manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14773794A JPH0818201A (en) | 1994-06-29 | 1994-06-29 | Thick film circuit board and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14773794A JPH0818201A (en) | 1994-06-29 | 1994-06-29 | Thick film circuit board and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0818201A true JPH0818201A (en) | 1996-01-19 |
Family
ID=15437008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14773794A Withdrawn JPH0818201A (en) | 1994-06-29 | 1994-06-29 | Thick film circuit board and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0818201A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011077469A (en) * | 2009-10-02 | 2011-04-14 | Murata Mfg Co Ltd | Method of manufacturing ceramic substrate, and ceramic substrate |
-
1994
- 1994-06-29 JP JP14773794A patent/JPH0818201A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011077469A (en) * | 2009-10-02 | 2011-04-14 | Murata Mfg Co Ltd | Method of manufacturing ceramic substrate, and ceramic substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010904 |