JPH08174266A - Composite solder material and its production - Google Patents

Composite solder material and its production

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Publication number
JPH08174266A
JPH08174266A JP32604294A JP32604294A JPH08174266A JP H08174266 A JPH08174266 A JP H08174266A JP 32604294 A JP32604294 A JP 32604294A JP 32604294 A JP32604294 A JP 32604294A JP H08174266 A JPH08174266 A JP H08174266A
Authority
JP
Japan
Prior art keywords
solder
solder material
weight
base material
voids
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32604294A
Other languages
Japanese (ja)
Inventor
Koichi Kishimoto
浩一 岸本
Tamotsu Koizumi
保 小泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP32604294A priority Critical patent/JPH08174266A/en
Publication of JPH08174266A publication Critical patent/JPH08174266A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To improve the flatness of the height of a solder melt by incorporating a granular material at a specific ratio into the base material for the solder material contg. specific ratios of Sn, Ag, Pb, Ni and Cu. CONSTITUTION: The base material for the solder material contains, by weight %, 0.5 to 10 Sn, 1 to 3 Ag and 0.1 tot 1 Ni or Cu and the balance substantially Pb and the granular material is incorporated at 0.01 to 5wt.% into this material. The granular material is preferably a material having the higher m.p. than the m.p. of the base mateiral for the solder material. If the rate of incorporation is below 0.01%, and effect of improving the horizontal degree of the height of a solder melt is insufficient. Voids are formed and joint strength decreases if the rate exceeds 5%. The voids are less formed if the Ni or Cu is incorporated into the base material. The effect is insufficient if the content of the Sn is below 0.5%. The joint strength degrades if the content exceeds 10%. The effect is insufficient if the content of the Ag is below 1% and the spreadability of the molten solder is no longer stable if the content exceeds 3%.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はパワートランジスタ等の
半導体チップの接続材料、更に詳しくは、半導体チップ
の基板への接続等に用いるテープ状又はワイヤー状の長
尺複合半田材料及びその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connecting material for a semiconductor chip such as a power transistor, and more particularly to a tape-like or wire-like long composite solder material used for connecting a semiconductor chip to a substrate and a method for producing the same. .

【0002】[0002]

【従来の技術】従来から、半導体チップを基板上に接続
する際に用いる接続材料として、テープ状又はワイヤー
状の半田材料からペレットを作製し、その適量を半導体
チップと基板の間に挟んだ状態で加熱し溶融させて使用
するものが知られている。しかし乍らこの接続材料の場
合、図2に示す様に基板1上の半田溶融物2は円弧状に
流れるため、半導体チップを基板1上に水平に接続する
ことが困難である。
2. Description of the Related Art Conventionally, as a connecting material used for connecting a semiconductor chip to a substrate, a pellet is prepared from a tape-shaped or wire-shaped solder material, and an appropriate amount is sandwiched between the semiconductor chip and the substrate. It is known to use by heating and melting. However, in the case of this connecting material, since the solder melt 2 on the substrate 1 flows in an arc shape as shown in FIG. 2, it is difficult to connect the semiconductor chip horizontally on the substrate 1.

【0003】半導体チップを基板上に水平に接続するこ
とは、その接続部分において所定の耐熱サイクルが保持
され、温度変化による半導体チップの剥離や導通不良を
防ぐ点で有用である。このため接続材料として、テープ
状又はワイヤー状に作製した半田基材中に、半田よりも
高融点の粒状物を散在状に混入せしめた長尺複合半田材
料から作製したペレットを用いることにより、図1に示
す様に半田溶融物2の厚み(高さ)を略水平に保持し、
該半田溶融物2上にセットする半導体チップを基板1上
に略水平に接続させることが知られている。また、本出
願人は上述のテープ状又はワイヤー状半田基材中に粒状
物を混入させるに有用な方法を発明し、先に特願平5−
11685号、特願平6−96571号、特願平6−9
6572号として出願した。
Horizontally connecting the semiconductor chip on the substrate is useful in that a predetermined heat-resistant cycle is maintained at the connecting portion and peeling of the semiconductor chip and conduction failure due to temperature change are prevented. Therefore, as a connecting material, by using a pellet made from a long composite solder material in which a granular material having a higher melting point than solder is mixed in a scattered manner in a solder base material manufactured in a tape shape or a wire shape, As shown in 1, hold the thickness (height) of the solder melt 2 substantially horizontally,
It is known that a semiconductor chip set on the solder melt 2 is connected to the substrate 1 substantially horizontally. Further, the applicant of the present invention has invented a method useful for mixing a granular material in the above-mentioned tape-shaped or wire-shaped solder base material, and previously disclosed in Japanese Patent Application No.
11685, Japanese Patent Application No. 6-96571, Japanese Patent Application No. 6-9
Filed as No. 6572.

【0004】一方、半導体装置は近年益々高速で稼働さ
れ、発熱,冷却の熱サイクルの条件が更に厳しくなって
いる。このため、より過酷な温度変化によっても半導体
チップの剥離や導通不良を防ぐことが要求されている。
該要求に対して、半導体チップを半田材料を介して基板
上に接続するに際し、所定形状の半田材料適量を基板上
に載せた状態で加熱し溶融させるとき、半田溶融物の水
平度を従来に比して更に高めることが、より過酷な温度
変化における半導体チップの剥離や導通不良を防ぐこと
に有効であることが分り、この要求に対応出来る半田材
料が求められている。
On the other hand, in recent years, semiconductor devices have been operated at ever higher speeds, and heat cycle conditions for heat generation and cooling have become more severe. For this reason, it is required to prevent the semiconductor chip from peeling off and poor conduction even when the temperature changes more severely.
In response to the demand, when connecting a semiconductor chip to a substrate through a solder material, when heating and melting an appropriate amount of a solder material having a predetermined shape on the substrate, the levelness of the solder melt is set to the conventional level. It has been found that further increase is effective in preventing peeling of the semiconductor chip and conduction failure under more severe temperature change, and a solder material capable of meeting this requirement is required.

【0005】このような要求に対応するには、従来から
知られている長尺複合半田材料(半田よりも高融点の粒
状物を散在状に混入せしめた長尺複合半田材料)として
の基材である半田材料に48重量%Sn−2重量%Ag
−残Pb合金を用いると、半田溶融物の高さの水平度で
は未だ不充分であり、半田溶融物の高さの水平度を更に
向上させることが必要である。また基材である半田材料
に5重量%In−5重量%Ag−残Pb合金を用いる
と、半田溶融物の高さの水平度は向上するものの、溶融
半田の流動が粒状物に阻害されてボイドが生じ接合強度
が弱くなるという欠点がある。このように、半田溶融物
の高さの水平度が向上すると共にボイドを生じさせない
ペレット用素材としての長尺複合半田材料は、未だ知ら
れていない。
In order to meet such demands, a base material as a conventionally known long composite solder material (long composite solder material in which granular materials having a melting point higher than that of solder are mixed in a scattered manner) 48 wt% Sn-2 wt% Ag in the solder material
-If residual Pb alloy is used, the levelness of the height of the solder melt is still insufficient, and it is necessary to further improve the levelness of the height of the solder melt. Further, when 5 wt% In-5 wt% Ag-residual Pb alloy is used for the solder material as the base material, the levelness of the height of the solder melt is improved, but the flow of the molten solder is hindered by the particulate matter. There is a drawback that voids occur and the bonding strength becomes weak. As described above, a long composite solder material as a raw material for pellets, in which the levelness of the height of the solder melt is improved and voids are not generated, has not yet been known.

【0006】[0006]

【発明が解決しようとする課題】上述した従来事情に鑑
み、本発明においては、半導体チップを半田材料を介し
て基板上に接続するに際して、半田材料として粒状物を
混入した長尺複合半田材料を用い、その所定形状の適量
を基板に載せた状態で加熱し溶融させることにより、半
田溶融物の高さの水平度が従来に比して更に向上すると
共に、ボイドを生じさせず所定の接合強度が維持でき
る、ペレット用素材としての長尺複合半田材料及びその
製造方法を提供することを目的とする。
In view of the above-mentioned conventional circumstances, in the present invention, when connecting a semiconductor chip to a substrate through a solder material, a long composite solder material containing a granular material as a solder material is used. By using and heating an appropriate amount of the specified shape on the board to melt it, the levelness of the height of the solder melt is further improved compared to the conventional method, and the specified bonding strength without causing voids. It is an object of the present invention to provide a long composite solder material as a raw material for pellets and a method for manufacturing the same, which can maintain the above.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、本願第1発明の長尺複合半田材料は、0.5〜10
重量%Sn,1〜3重量%Agを含有し残部が不可避不
純物を除いてPbからなる半田材料を基材とし、これに
粒状物が0.01〜5重量%混入されていることを特徴
とする。また本願第2発明は、上記第1発明の長尺複合
半田材料において、半田材料基材が0.1〜1重量%の
Ni又はCuを含有することを特徴とする。
In order to achieve the above object, the long composite solder material of the first invention of the present application is 0.5-10.
A solder material comprising Pb with a balance of Sn, 1 to 3 wt% Ag and the balance excluding unavoidable impurities is used as a base material, and 0.01 to 5 wt% of granular material is mixed therein. To do. The second invention of the present application is characterized in that, in the long composite solder material of the first invention, the solder material base material contains 0.1 to 1% by weight of Ni or Cu.

【0008】また本願第3発明の長尺複合半田材料の製
造方法は、0.5〜10重量%Sn,1〜3重量%Ag
を含有し残部が不可避不純物を除いてPbからなる半田
材料基材に、粒状物を0.01〜5重量%混入させた
後、塑性加工を施してなることを特徴とする。また本願
第4発明は、上記第3発明の長尺複合半田材料の製造方
法において、半田材料基材が0.1〜1重量%のNi又
はCuを含有することを特徴とする。
The method for producing a long composite solder material according to the third aspect of the present invention is 0.5 to 10 wt% Sn, 1 to 3 wt% Ag.
It is characterized in that the solder material base material containing Pb and containing Pb as the balance except for unavoidable impurities is mixed with 0.01 to 5% by weight of a granular material and then subjected to plastic working. The fourth invention of the present application is characterized in that, in the method for producing a long composite solder material of the third invention, the solder material base material contains 0.1 to 1% by weight of Ni or Cu.

【0009】[0009]

【作用】以下、本発明について更に詳しく説明する。ま
ず基材としての半田材料について述べれば、本発明にお
いては、半田材料基材としてPbに0.5〜10重量%
Sn,1〜3重量%Agを含有させることが必要であ
る。好ましくは0.1〜1重量%のNi又はCuを更に
含有させることである。このような半田材料を基材と
し、該基材内部に粒状物を0.01〜5重量%混入させ
た長尺複合半田材料を作製し、その所定形状の適量を基
板に載せた状態で加熱し溶融させることにより、半田溶
融物の高さの水平度が従来に比して更に向上すると共
に、ボイドを生じさせず、所定の接合強度が維持できる
という優れた効果を奏する。
The present invention will be described in more detail below. First, the solder material as the base material will be described. In the present invention, Pb is 0.5 to 10% by weight as the solder material base material.
It is necessary to contain Sn, 1-3 wt% Ag. It is preferable to further contain 0.1 to 1% by weight of Ni or Cu. Using such a solder material as a base material, a long composite solder material in which 0.01 to 5% by weight of a granular material is mixed inside the base material is prepared, and an appropriate amount of the predetermined shape is heated on a substrate. By the melting, the levelness of the height of the solder melt is further improved as compared with the prior art, and a predetermined bonding strength can be maintained without generating voids.

【0010】Sn含有量が0.5重量%未満の時、粒状
物を内部に混入させた複合半田材料を溶融させた時の半
田溶融物の高さのばらつき改善効果が本要求に対して不
充分であると共に、接合強度が低下する。Sn含有量が
10重量%を超える時、粒状物を内部に混入させた複合
半田材料を溶融させた時の半田溶融物の高さのばらつき
改善効果が本要求に対して不充分であると共に、接合強
度が低下する。このためSn含有量は0.5〜10重量
%と定めた。
When the Sn content is less than 0.5% by weight, the effect of improving the variation in the height of the solder melt when the composite solder material having the granules mixed therein is melted is unsatisfactory for this requirement. It is sufficient and the bonding strength is reduced. When the Sn content exceeds 10% by weight, the effect of improving the variation in the height of the solder melt when the composite solder material having the particulate matter mixed therein is melted is insufficient for this requirement, and Bonding strength decreases. Therefore, the Sn content is set to 0.5 to 10% by weight.

【0011】Ag含有量が1重量%未満の時、粒状物を
内部に混入させた複合半田材料を溶融させた時の半田溶
融物の高さの水平度向上の改善効果が本要求に対して不
充分である。Ag含有量が3重量%を超える時、粒状物
を内部に混入させた複合半田材料を溶融させた時の広が
り性が安定せず、半田溶融物の高さの水平度向上の改善
効果が本要求に対して不充分であると共に、ボイドが生
成し接合強度も低下する。このようにボイドが生成する
理由は、粒状物を内部に混入させた複合半田材料を溶融
させた時の広がり性が悪くなり、粒状物に阻害されて接
合部にボイドが生じたものと思われる。このためAg含
有量は1〜3重量%と定めた。
When the Ag content is less than 1% by weight, the effect of improving the levelness of the height of the solder melt when the composite solder material having the granular material mixed therein is melted is against this requirement. Not enough. When the Ag content exceeds 3% by weight, the spreadability when the composite solder material with the particulate matter mixed therein is melted is not stable, and the effect of improving the levelness of the height of the solder melt is essential. In addition to being insufficient to meet the requirements, voids are generated and the bonding strength is reduced. It is considered that the reason why the voids are generated is that the spreadability when the composite solder material in which the particulate matter is mixed is melted is deteriorated, and the void is generated in the joint portion by being inhibited by the particulate matter. . Therefore, the Ag content is set to 1 to 3% by weight.

【0012】また、上記半田材料基材に0.1〜1重量
%のNi又はCuを含有させると、ボイドの発生はさら
に少なくなる。
When the solder material base material contains 0.1 to 1% by weight of Ni or Cu, the generation of voids is further reduced.

【0013】次に、上記半田材料基材に混入させる粒状
物について説明する。粒状物としては、半田材料基材よ
り高融点の材料が好ましい。例えば、Cu,W,Mo,
Ni等の金属、Al2 3 ,ガラス等の酸化物、Ti
N,AlN等の窒化物が好ましく用いられる。粒状物の
形状は、球形,角形,不定形の何れでもよい。また好ま
しい寸度は、対角最大寸度が20〜70μmの範囲であ
り、用途に応じて使い分けて用いられる。粒状物の複合
半田材料中の好ましい混入率は、0.01〜5重量%で
ある。該混入率が0.01重量%未満だと、粒状物を内
部に混入させた複合半田材料を溶融させた時の半田溶融
物の高さの水平度向上の改善効果が本要求に対して不充
分である。また該混入率が5重量%を越えるとボイドが
生じ接合強度が弱くなる。
Next, the granular material mixed in the solder material base material will be described. As the granular material, a material having a higher melting point than the solder material base material is preferable. For example, Cu, W, Mo,
Metals such as Ni, Al 2 O 3 , oxides such as glass, Ti
Nitride such as N or AlN is preferably used. The shape of the granular material may be spherical, square or amorphous. Further, the preferred dimension is such that the maximum diagonal dimension is in the range of 20 to 70 μm, and it is properly used depending on the application. A preferable mixing ratio of the granular material in the composite solder material is 0.01 to 5% by weight. If the mixing ratio is less than 0.01% by weight, the improvement effect of improving the levelness of the height of the solder melt when the composite solder material having the granules mixed therein is melted does not meet the present requirement. Is enough. On the other hand, if the mixing ratio exceeds 5% by weight, voids occur and the bonding strength becomes weak.

【0014】而して、半田材料の基材の組成及び粒状物
の混入率を前述の様な構成にすることにより、粒状物を
内部に混入させた複合半田材料を溶融させた時、空洞部
を生じることなく半田材料が流動すると共に粒状物の存
在により拡がりが規制出来、半田溶融物の高さの水平度
が従来に比してより向上すると共に、ボイドを生じさせ
ないため空洞部に起因した接合強度の低下を阻止するこ
とが出来るという優れた効果を奏すると考えられる。
Thus, by making the composition of the base material of the solder material and the mixing ratio of the granular material as described above, when the composite solder material having the granular material mixed therein is melted, a cavity is formed. The flow of the solder material can be controlled without causing the expansion and the spread can be regulated by the presence of the granular material, the levelness of the height of the solder melt can be further improved as compared with the conventional one, and the void is caused because the void is not generated. It is considered to have an excellent effect that it is possible to prevent a decrease in bonding strength.

【0015】以下、本発明に係る長尺複合半田材料の製
造方法について詳述する。本発明の製造方法において
は、0.5〜10重量%Sn,1〜3重量%Agを含有
し残部が不可避不純物を除いてPbからなる半田材料基
材に0.01〜5重量%の粒状物を混入させた後、塑性
加工を施すことが必要である。好ましくは、前記半田材
料基材に0.1〜1重量%のNi又はCuを含有させる
ことが良い。ここでいう長尺複合半田材料とは、半田材
料を基材としこれに粒状物を機械的に混入させたテープ
状又はワイヤー状の複合半田材料を指すものである。ま
たここでいう塑性加工とは、テープ状半田材料において
は2本の圧延ロールによる冷間加工、ワイヤー状半田材
料においては押出し加工した後の冷間加工を指すもので
ある。すなわち、テープ状複合半田材料の製造において
は、本出願人による先出願の特願平5−11685号に
開示されたように、水平方向に併設した左右2本の圧延
ロール間に2枚の半田テープを上方から挿通すると共
に、該両テープの接合手前箇所を所定角度に拡開せしめ
て該拡開部に粒状物を供給し、圧延ロールの巻き込みに
よる冷間加工(圧延加工)によって半田材料本体内に前
記粒状物を混入せしめる製造方法が好ましく採用され
る。またワイヤー状複合半田材料の製造においては、本
出願人による先出願の特願平6−96571号及び特願
平6−96572号に開示された方法が好ましく採用さ
れるが、この中でも、半田ビレットの軸方向に設けた空
洞部に粒状物を充填した複合半田ビレットを押し出し加
工した後冷間加工(伸線加工)を施す製造方法が好まし
く採用される。
The method of manufacturing the long composite solder material according to the present invention will be described in detail below. In the manufacturing method of the present invention, the solder material base material containing 0.5 to 10% by weight of Sn and 1 to 3% by weight of Ag and the balance excluding unavoidable impurities is made of Pb, and 0.01 to 5% by weight of granular material is used. It is necessary to perform plastic working after mixing the substances. Preferably, the solder material base material contains 0.1 to 1% by weight of Ni or Cu. The long composite solder material here means a tape-shaped or wire-shaped composite solder material in which a solder material is used as a base material and granular materials are mechanically mixed therein. Further, the plastic working herein means cold working by two rolling rolls in the case of tape-shaped solder material, and cold working after extrusion processing in the case of wire-shaped solder material. That is, in the production of the tape-shaped composite solder material, as disclosed in Japanese Patent Application No. 5-11685 filed by the applicant of the present invention, two solders are placed between two rolling rolls on the left and right arranged side by side in the horizontal direction. The tape is inserted from above, the part before the joining of the two tapes is expanded to a predetermined angle, the granular material is supplied to the expanded part, and the solder material main body is subjected to cold working (rolling) by winding the rolling roll. A production method in which the above-mentioned granular material is mixed is preferably adopted. Further, in the production of the wire-shaped composite solder material, the methods disclosed in Japanese Patent Application Nos. 6-96571 and 6-96572 filed by the present applicant are preferably adopted. Among them, the solder billet It is preferable to employ a manufacturing method in which the composite solder billet in which the hollow portion provided in the axial direction is filled with the granular material is extruded and then cold working (wire drawing) is performed.

【0016】このように、PbにSn,Ag,Ni,C
uを所定量含有した半田材料基材に粒状物を所定の比率
で混入させた後に塑性加工を施すことで、得られた長尺
複合半田材料において粒状物を均一に分散して含有させ
ることができ、よって、本発明に係る長尺複合半田材料
の効果をより確実ならしめると共に、製造途中における
断線トラブルを大幅に低減して効率良く製造し得る方法
として好適に利用できる。
As described above, Sn, Ag, Ni, C are added to Pb.
It is possible to evenly disperse the particles in the obtained long composite solder material by mixing the particles in a predetermined ratio with a solder material base material containing a predetermined amount of u and then performing plastic working. Therefore, the effect of the long composite solder material according to the present invention can be more reliably ensured, and it can be suitably used as a method capable of efficiently reducing the disconnection trouble during the production and efficiently producing the material.

【0017】[0017]

【実施例】以下、表1に記載される各実施例及び比較例
について述べる。 (実施例1)0.5重量%Sb,2重量%Agを含有し
残部が不可避不純物を除いてPbからなる2mm厚さ×
50mm幅の2枚の半田テープで、30〜50μm径の
Ni粒状物の粉末0.4重量%を挟み、前述の如く2本
の圧延ロール間に挿通し冷間加工を施して0.3mm厚
さ×50mm幅のテープ状複合半田材料を作製した。こ
の様にして得られたテープを素材としてプレス打抜き加
工を施し、0.3mm厚さ×1.8mm幅×2.5mm
長さのペレットを得た。得られたペレットを、基板とし
ての無酸素銅板上に載置して無酸素雰囲気炉中で加熱し
た。加熱は炉内雰囲気をN2 50%、H2 50%に調整
した後、350℃×8分の加熱条件でペレットを溶融さ
せた。
EXAMPLES Each example and comparative example shown in Table 1 will be described below. (Example 1) 2 mm thickness containing 0.5% by weight of Sb and 2% by weight of Ag, and the balance being Pb except for unavoidable impurities x
0.4mm by weight of Ni granular powder having a diameter of 30 to 50μm is sandwiched between two 50mm-wide solder tapes, and is inserted between the two rolling rolls as described above to be cold-worked to have a thickness of 0.3mm. A tape-shaped composite solder material having a width of 50 mm was prepared. Using the tape thus obtained as a raw material, press punching is performed, and 0.3 mm thickness x 1.8 mm width x 2.5 mm
Long pellets were obtained. The obtained pellets were placed on an oxygen-free copper plate as a substrate and heated in an oxygen-free atmosphere furnace. For heating, the atmosphere in the furnace was adjusted to 50% N 2 and 50% H 2 , and then the pellets were melted under heating conditions of 350 ° C. × 8 minutes.

【0018】10個の試料についてサンプルを作製し
て、5000倍に拡大した走査型電子顕微鏡写真から半
田溶融物の高さ及びボイドの発生状況を観察した。半田
溶融物の高さは図面に示す様に、溶融前ペレットの中心
位置の高さh1 、溶融前ペレット長さの1.5倍位置の
高さh2 を測定した。(h2 /h1 )×100%を水平
度として10個の平均を求めた。結果を表2に示す。ボ
イドの発生状況は走査型電子顕微鏡観察により、ボイド
の存在が断面積中1%未満のとき◎、1%以上5%未満
のとき○、5%以上10%未満のとき△、10%以上の
とき×と評価した。結果を表2に示す。また基板上で溶
融させた半田溶融物について、シェアーテスタを用いて
剪断加重を測定し、10個の平均値を接合強度とした。
結果を表2に示す。
Samples were prepared from 10 samples and the height of the solder melt and the occurrence of voids were observed from a scanning electron micrograph magnified 5000 times. As for the height of the solder melt, as shown in the drawing, the height h 1 at the center position of the pellet before melting and the height h 2 at a position 1.5 times the length of the pellet before melting were measured. An average of 10 pieces was obtained with (h 2 / h 1 ) × 100% as the horizontality. Table 2 shows the results. The presence of voids is observed by scanning electron microscopy when the presence of voids is less than 1% in the cross-sectional area. ◎ When 1% or more and less than 5% ○ When 5% or more and less than 10% △, 10% or more When evaluated as x. Table 2 shows the results. The shear load of the solder melt melted on the substrate was measured using a shear tester, and the average value of 10 pieces was taken as the bonding strength.
Table 2 shows the results.

【0019】(実施例2〜13/比較例1〜8)半田テ
ープの組成、粒状物の混入率を表1のようにしたこと以
外は実施例1と同様にして試料を作製し、水平度、ボイ
ド発生状況、接合強度を測定した。結果を表2に示す。
(Examples 2 to 13 / Comparative Examples 1 to 8) Samples were prepared in the same manner as in Example 1 except that the composition of the solder tape and the mixing ratio of the particulates were as shown in Table 1, and the levelness was measured. , The occurrence of voids and the bonding strength were measured. Table 2 shows the results.

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】 [Table 2]

【0022】表2の測定結果から、Pbに所定量のS
n,Agを含有した半田材料基材に粒状物を所定の比率
で混入せしめた本発明実施品(実施例1〜5)は、その
適量を基板に載せた状態で加熱し溶融させることによ
り、半田溶融物の高さの水平度がいずれも100%であ
ると共に、ボイド発生状況が断面積中1%以上5%未満
であり、接合強度は5.0〜5.5g/μm2 と良好で
あることが判る。
From the measurement results shown in Table 2, Pb contains a predetermined amount of S.
The inventive products (Examples 1 to 5) in which the granular material is mixed in the solder material base material containing n and Ag at a predetermined ratio are heated and melted in an appropriate amount on the substrate, The levelness of the height of the solder melt is 100%, the voids are 1% or more and less than 5% in the cross-sectional area, and the bonding strength is 5.0 to 5.5 g / μm 2 . I know there is.

【0023】また、Pbに所定量のSn,Ag,Ni,
Cuを含有した半田材料基材に粒状物を所定の比率で混
入せしめた本発明実施品(実施例6〜13)は、その適
量を基板に載せた状態で加熱し溶融させることにより、
半田溶融物の高さの水平度がいずれも100%であると
共に、ボイド発生状況は断面積中1%未満であり、接合
強度は5.3〜6.0g/μm2 とさらに良好であるこ
とが判る。
Further, Pb contains a predetermined amount of Sn, Ag, Ni,
The embodiment products of the present invention (Examples 6 to 13) in which the granular material is mixed in the Cu-containing solder material base material at a predetermined ratio are heated and melted in an appropriate amount on the substrate,
The level of the solder melt is 100%, the voids are less than 1% in the cross-sectional area, and the bonding strength is 5.3 to 6.0 g / μm 2 , which is even better. I understand.

【0024】これに対し、半田基材の組成を48重量%
Sn−2重量%Ag−残Pbとした場合、粒状物を混入
しない比較例1は水平度40%程度で、半導体チップを
基板上に水平に接続することが困難である。また粒状物
を本発明の範囲内混入した比較例2にあっては、水平度
が80%と比較例1に比して改善されるものの、本発明
が要求する改善効果(水平度100%)に対しては不充
分であると共にボイドの発生も多く接合強度に劣ること
が判る。
On the other hand, the composition of the solder base material is 48% by weight.
In the case of Sn-2 wt% Ag-remaining Pb, Comparative Example 1 in which no particulate matter is mixed has a horizontality of about 40%, and it is difficult to connect the semiconductor chip horizontally on the substrate. Further, in Comparative Example 2 in which the particulate matter is mixed within the range of the present invention, the levelness is 80%, which is improved as compared with Comparative Example 1, but the improvement effect required by the present invention (horizontality 100%). However, it is found that the joint strength is inferior and the number of voids is large and the joint strength is poor.

【0025】また、半田基材の組成及びその含有量を本
発明の範囲内としても、粒状物を混入しない比較例3は
水平度40%程度で、半導体チップを基板上に水平に接
続することが困難である。また、Sn含有量が本発明の
範囲外である比較例4,5は、粒状物の混入率が本発明
の範囲内であっても、水平度では90%と比較例1〜3
に比して改善されるものの、本発明が要求する改善効果
(水平度100%)に対しては不充分であり、しかもボ
イドの発生が5〜10%で接合強度に劣ることが判る。
Even if the composition of the solder base material and the content thereof are within the scope of the present invention, in Comparative Example 3 in which no granular material is mixed, the horizontal degree is about 40%, and the semiconductor chip is connected horizontally on the substrate. Is difficult. Further, in Comparative Examples 4 and 5 in which the Sn content is outside the range of the present invention, even if the mixing ratio of the particulate matter is within the range of the present invention, the horizontal degree is 90%, and Comparative Examples 1 to 3
Although it is improved compared to the above, it is not sufficient for the improvement effect (horizontality 100%) required by the present invention, and it is understood that the occurrence of voids is 5 to 10% and the bonding strength is poor.

【0026】また、Agの含有量が本発明の範囲外であ
る比較例6,7は、粒状物の混入率が本発明の範囲内で
あっても、水平度で80%と本発明が要求する改善効果
(水平度100%)に対しては不充分であり、しかもボ
イドの発生が5〜10%又は10%以上で接合強度に劣
ることが判る。また、半田基材の組成を5重量%In−
5重量%Ag−残Pbとした比較例8では、水平度の改
善効果は満足するものの、ボイドの発生が10%以上で
接合強度に劣ることが判る。さらに、半田基材の組成を
本発明と同様にしても、粒状物が本発明の範囲を越えて
混入された比較例9にあっては、本発明が要求する水平
度の改善効果(水平度100%)に対しては不充分であ
り、しかもボイドの発生が5〜10%で接合強度に劣る
ことが判る。
Further, in Comparative Examples 6 and 7 in which the content of Ag is outside the range of the present invention, even if the mixing ratio of the particulates is within the range of the present invention, the levelness is 80%, which is required by the present invention. It is found that the bonding strength is not sufficient for the improvement effect (horizontality 100%), and that the void strength is 5 to 10%, or 10% or more, the bonding strength is poor. In addition, the composition of the solder base material is 5 wt% In-
In Comparative Example 8 in which 5 wt% Ag-remaining Pb is used, the effect of improving the levelness is satisfied, but it is found that the occurrence of voids is 10% or more and the joint strength is poor. Furthermore, even if the composition of the solder base material is the same as that of the present invention, in Comparative Example 9 in which the particulate matter is mixed beyond the range of the present invention, the effect of improving the horizontality required by the present invention (horizontality It is found that the bonding strength is not sufficient for 100%), and the occurrence of voids is 5 to 10%, resulting in poor bonding strength.

【0027】[0027]

【発明の効果】以上説明したように、本発明の長尺複合
半田材料は、Pbに0.5〜10重量%Sn,1〜3重
量%Agを含有した半田基材に粒状物を0.01〜5重
量%混入せしめた構成としたので、適量を基板に載せた
状態で加熱し溶融させた時、半田溶融物の高さの水平度
が従来に比して更に向上し、半導体チップを基板上に極
めて高い精度をもって水平に接続することが可能とな
り、しかもボイドを生じさせず所定の接合強度を維持す
ることができる。よって、近年益々高速で稼働され、発
熱,冷却の熱サイクルの条件が更に厳しくなっている半
導体装置の組み立てに好適に用いられ、より過酷な温度
変化によってもその接続部分において所定の耐熱サイク
ルが保持され半導体チップの剥離や導通不良を起こすこ
とがないので、半導体装置の信頼性向上にも寄与し得る
等、多大な効果を奏する。
As described above, in the long composite solder material of the present invention, Pb contains 0.5 to 10% by weight of Sn and 1 to 3% by weight of Ag in a solder base material with a granular material of 0. Since the composition is mixed with 01 to 5% by weight, when the appropriate amount is placed on the substrate and heated and melted, the levelness of the height of the solder melt is further improved as compared with the conventional one, and the semiconductor chip is It is possible to make horizontal connection on the substrate with extremely high accuracy, and it is possible to maintain a predetermined bonding strength without causing voids. Therefore, it is suitable for use in assembling semiconductor devices that have been operating at ever higher speeds in recent years and the conditions of heat cycles for heat generation and cooling have become more severe, and even if the temperature changes more severely, a predetermined heat-resistant cycle can be maintained at the connection part. Therefore, peeling of the semiconductor chip and conduction failure do not occur, so that it can contribute to the improvement of the reliability of the semiconductor device, which is a great effect.

【0028】また、上記半田基材に0.1〜1重量%の
Ni又はCuをさらに含有した構成とした場合は、ボイ
ドの発生をより減少せしめて接合強度の向上が期待でき
る効果がある。
Further, when the solder base material further contains 0.1 to 1% by weight of Ni or Cu, there is an effect that the generation of voids can be further reduced and the joint strength can be expected to be improved.

【0029】また本発明の製造方法によれば、PbにS
n,Ag,Ni,Cuを所定量含有した半田材料基材に
粒状物を所定の比率で混入させた後に塑性加工を施すこ
とで、得られた長尺複合半田材料において粒状物を均一
に分散して含有させることができる。よって、上述した
如く多くの利点を奏する本発明長尺複合半田材料を確実
に製造してその効果をより実効あるものとし、さらに製
造途中における断線トラブルを大幅に低減して効率良く
製造し得る方法として好適に利用できる。
Further, according to the manufacturing method of the present invention, S is added to Pb.
Granules are evenly dispersed in the obtained long composite solder material by mixing the granules in a predetermined ratio in a solder material base material containing a predetermined amount of n, Ag, Ni, Cu and then subjecting to plastic working. Can be included. Therefore, the long composite solder material of the present invention, which has many advantages as described above, can be reliably manufactured, the effect thereof can be made more effective, and further, the disconnection trouble during the manufacturing can be greatly reduced and the method can be efficiently manufactured. Can be suitably used as.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による複合半田材料の基板上での溶融状
態を示す簡略図。
FIG. 1 is a simplified diagram showing a molten state of a composite solder material according to the present invention on a substrate.

【図2】従来の半田材料の基板上での溶融状態を示す簡
略図。
FIG. 2 is a simplified diagram showing a molten state of a conventional solder material on a substrate.

【符号の説明】[Explanation of symbols]

1:基板 2:半田溶融物 1: Substrate 2: Solder melt

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 0.5〜10重量%Sn,1〜3重量%
Agを含有し残部が不可避不純物を除いてPbからなる
半田材料を基材とし、これに粒状物が0.01〜5重量
%混入されていることを特徴とする半導体チップ接続用
長尺複合半田材料。
1. 0.5-10 wt% Sn, 1-3 wt%
A long composite solder for connecting a semiconductor chip, characterized in that a solder material made of Pb containing Ag and the remainder excluding inevitable impurities is used as a base material, and 0.01 to 5% by weight of a granular material is mixed therein. material.
【請求項2】 上記半田材料基材が0.1〜1重量%の
Ni又はCuを含有することを特徴とする請求項1記載
の半導体チップ接続用長尺複合半田材料。
2. The long composite solder material for connecting a semiconductor chip according to claim 1, wherein the solder material base material contains 0.1 to 1% by weight of Ni or Cu.
【請求項3】 0.5〜10重量%Sn,1〜3重量%
Agを含有し残部が不可避不純物を除いてPbからなる
半田材料基材に、粒状物を0.01〜5重量%混入させ
た後、塑性加工を施してなることを特徴とする半導体チ
ップ接続用長尺複合半田材料の製造方法。
3. 0.5-10 wt% Sn, 1-3 wt%
For connecting semiconductor chips, characterized in that 0.01 to 5% by weight of a granular material is mixed into a solder material base material made of Pb containing Ag and the balance excluding unavoidable impurities, and then subjected to plastic working. Manufacturing method of long composite solder material.
【請求項4】 上記半田材料基材が0.1〜1重量%の
Ni又はCuを含有することを特徴とする請求項3記載
の半導体チップ接続用長尺複合半田材料の製造方法。
4. The method for producing a long composite solder material for connecting a semiconductor chip according to claim 3, wherein the solder material base material contains 0.1 to 1% by weight of Ni or Cu.
JP32604294A 1994-12-27 1994-12-27 Composite solder material and its production Pending JPH08174266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32604294A JPH08174266A (en) 1994-12-27 1994-12-27 Composite solder material and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32604294A JPH08174266A (en) 1994-12-27 1994-12-27 Composite solder material and its production

Publications (1)

Publication Number Publication Date
JPH08174266A true JPH08174266A (en) 1996-07-09

Family

ID=18183462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32604294A Pending JPH08174266A (en) 1994-12-27 1994-12-27 Composite solder material and its production

Country Status (1)

Country Link
JP (1) JPH08174266A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056217A1 (en) * 1997-06-04 1998-12-10 Ibiden Co., Ltd. Soldering member for printed wiring boards
JPWO2005120765A1 (en) * 2004-06-08 2008-04-03 千住金属工業株式会社 Method for producing high melting point metal particle dispersed foam solder

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056217A1 (en) * 1997-06-04 1998-12-10 Ibiden Co., Ltd. Soldering member for printed wiring boards
US6358630B1 (en) 1997-06-04 2002-03-19 Ibiden Co., Ltd. Soldering member for printed wiring boards
JPWO2005120765A1 (en) * 2004-06-08 2008-04-03 千住金属工業株式会社 Method for producing high melting point metal particle dispersed foam solder
JP4650417B2 (en) * 2004-06-08 2011-03-16 千住金属工業株式会社 Method for producing high melting point metal particle dispersed foam solder

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