JPH08144094A - Plating device - Google Patents

Plating device

Info

Publication number
JPH08144094A
JPH08144094A JP31548694A JP31548694A JPH08144094A JP H08144094 A JPH08144094 A JP H08144094A JP 31548694 A JP31548694 A JP 31548694A JP 31548694 A JP31548694 A JP 31548694A JP H08144094 A JPH08144094 A JP H08144094A
Authority
JP
Japan
Prior art keywords
substrate
plating
current
packing
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31548694A
Other languages
Japanese (ja)
Inventor
Yasushi Hibino
靖 日比野
Kazuyoshi Kimura
和良 木村
Kanji Irie
寛治 入江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Priority to JP31548694A priority Critical patent/JPH08144094A/en
Publication of JPH08144094A publication Critical patent/JPH08144094A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE: To form a plating film uniform in thickness over the whole region by watertightly sealing the gap between a supporting member and a substrate and providing a conductor member to electrically connect the member to the substrate. CONSTITUTION: A current is applied to a substrate D to plate a substrate film 2. The substrate D is attached to the holder C of a plating device. The substrate D is pressed down against the spring force of an arm 57 in a conductor member C23, hence the arm 57 is elastically flexed, a contactor 58 is pressed on the substrate D, and a good electrical continuity is attained. The upper face C22a of a packing C22 is firmly attached to the substrate D, and a plating soln. never intrudes into the conductor part. The substrate is inserted into the plating soln. and electroplated. A minute object forming pattern formed on the substrate D including the part close to the periphery of the substrate is plated at the current density as expected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マスク剤でもって多数
の多種多様な微小なパターンを形成した基板に対してメ
ッキ膜を成膜することによって、多数の微小物を形成す
る場合に用いることのできるメッキ装置に関する。例え
ば上記マスク剤でもって薄膜磁気ヘッド用の薄膜コイル
や薄膜磁性層等の多数の微小物のパターンを形成し、そ
こにそれらを形成する為の金属をメッキすることによっ
て、それらのコイル或いは磁性層を形成する場合に用い
ることのできるメッキ装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used when a large number of minute objects are formed by forming a plating film on a substrate on which a large number of various minute patterns are formed with a masking agent. The present invention relates to a plating device that can be used. For example, by forming a pattern of a large number of minute objects such as a thin-film coil for a thin-film magnetic head or a thin-film magnetic layer with the masking agent, and plating a metal for forming them on the coil or the magnetic layer. The present invention relates to a plating apparatus that can be used when forming a metal.

【0002】[0002]

【従来の技術】図11に示すように、基板Dは一般にシ
リコンやアルティック(AlTiC)の基板本体1(例えば
直径は75〜150mm、厚みは1〜4mm程度)に下地膜
2として導電性金属膜例えば銅を数nmの厚みに成膜し
てある。この下地膜2が成膜された面が導電面2aとな
り、その面がメッキ用に利用される(被メッキ面とも呼
ばれる)。該基板Dはメッキに際してその周辺の支持用
領域4を支持部材で支える為、その支持用領域4(被支
持部)よりも内側の中央部分がメッキ用領域3(有効面
とも呼ぶ)となる。このような基板Dを用いて微小物の
形成を行う場合には、上記下地膜2の上を、支持用領域
4における外周縁の部分に幅1.8mm程度の通電部5が
残るよう基板におけるメッキ用領域3よりも広範囲をレ
ジストのマスク6で覆う。上記メッキ用領域3における
マスク6には、形成しようとする微小物のパターン7、
例えば図示の如き形状の微細なパターン7を多数形成す
る。7aはパターン7内の下地膜2が露出している部分
で、メッキ膜を成膜しようとする部分を示す。各パター
ン7の寸法は、差し渡しで例えば50μm程度であり、
このようなパターン7は上記1枚の基板Dのメッキ用領
域3の全面にわたって例えば数万個ほど形成する。
2. Description of the Related Art As shown in FIG. 11, a substrate D is generally made of silicon or AlTiC (AlTiC) substrate body 1 (for example, a diameter of 75 to 150 mm and a thickness of 1 to 4 mm). A film, for example, copper is formed to a thickness of several nm. The surface on which the base film 2 is formed becomes the conductive surface 2a, and the surface is used for plating (also referred to as a plated surface). Since the substrate D supports the supporting region 4 around the substrate D by the supporting member during plating, the central portion inside the supporting region 4 (supported portion) becomes the plating region 3 (also referred to as an effective surface). In the case of forming a minute object using such a substrate D, the conductive film 5 having a width of about 1.8 mm is left on the base film 2 on the base film 2 at the outer peripheral edge portion of the supporting region 4. A wider area than the plating area 3 is covered with a resist mask 6. The mask 6 in the plating region 3 has a pattern 7 of a minute object to be formed,
For example, a large number of fine patterns 7 having the shape shown in the drawing are formed. Reference numeral 7a denotes a portion of the pattern 7 where the base film 2 is exposed, and indicates a portion where a plating film is to be formed. The size of each pattern 7 is about 50 μm across,
For example, tens of thousands of such patterns 7 are formed over the entire surface of the plating region 3 of the one substrate D.

【0003】上記のような基板Dを図12に示す如きホ
ルダーCfで保持し、メッキ槽Af内のメッキ液16fに浸漬
させる。上記ホルダーCfにおける46fは上記基板を支え
る為の支持部材であって環状に形成され、その内側が上
記メッキ用領域3を露出させる為の開口部48fとなって
いる。該支持部材46fは上記基板Dの通電部5に対する
電気的接続を行う為の接続部材でもあり、導電材料で形
成している。C2fは基板Dを支持部材46fに押さえ付け
る為の押え体である。メッキ槽Af内の陽極Bfと上記支持
部材46fは電源20fに接続する。
The substrate D as described above is held by a holder Cf as shown in FIG. 12, and immersed in the plating solution 16f in the plating tank Af. 46f of the holder Cf is a support member for supporting the substrate and is formed in an annular shape, and the inside thereof is an opening 48f for exposing the plating area 3. The supporting member 46f is also a connecting member for making an electrical connection to the current-carrying portion 5 of the substrate D, and is made of a conductive material. C2f is a retainer for pressing the substrate D against the support member 46f. The anode Bf in the plating tank Af and the supporting member 46f are connected to a power source 20f.

【0004】上記状態においては、電源20fからの電流
が陽極Bfからメッキ液16fに流れ、更にその電流はメッ
キ液16fからパターン7内の下地膜の露出部分7aに流
れ、下地膜2を通って通電部5に至る。通電部5からは
それと支持部材46fとの接触を通して支持部材46fに至
り、支持部材46fを通して電源20fに戻る。このように
電流が流れることにより、基板Dにおける多数のパター
ン7の上記部分7aには夫々メッキ膜が成膜する。このよ
うにして、基板Dにおける所定のメッキ用領域3内に一
度に多数の微小物を形成することができる。
In the above state, the current from the power source 20f flows from the anode Bf to the plating solution 16f, and further the current flows from the plating solution 16f to the exposed portion 7a of the underlying film in the pattern 7 and passes through the underlying film 2. The current-carrying section 5 is reached. From the current-carrying part 5, it reaches the support member 46f through contact with the support member 46f, and returns to the power source 20f through the support member 46f. By the current flowing in this way, a plating film is formed on each of the portions 7a of the large number of patterns 7 on the substrate D. In this way, a large number of minute objects can be formed at once in the predetermined plating region 3 on the substrate D.

【0005】[0005]

【発明が解決しようとする課題】この従来のメッキ装置
では、上記メッキを行っている場合に、上記支持部材46
fとその上に乗っている基板Dの支持用領域4との間に
メッキ液の染み込みが生ずる問題点があった。そのよう
な染み込みが生じてそれが上記下地膜2の露出している
通電部5に至ると、上記メッキ液から上記露出部分7aへ
の電流の流れの他に、メッキ液から上記染み込みのあっ
た部分の通電部5への電流の流れも生じ、その結果、基
板のメッキ用領域3における多数のパターン7内の露出
部分7a全体への電流密度が減少し、メッキ用領域3全体
に所定の厚みのメッキ膜を形成するのに必要とする時間
が長くなってしまう問題点があった。特に、上記染み込
みは、図13に矢印91の有無で示すように有る場所と無
い場所が生じ、上記染み込みのある部分即ち支持用領域
4に近接した部分92におけるパターン7においては上記
電流密度の低下が大きく、その部分92の膜厚が他の部分
のパターンの膜厚に比べて特に薄くなり、その結果、メ
ッキ用領域3全体での各パターン7のメッキ膜の膜厚に
大きなばらつきをもたらす問題点があった。
In this conventional plating apparatus, the support member 46 is used when the plating is being performed.
There has been a problem that the plating solution permeates between f and the supporting region 4 of the substrate D which is placed on the f. When such impregnation occurred and reached the conducting part 5 where the base film 2 was exposed, in addition to the current flow from the plating solution to the exposed portion 7a, the impregnation occurred from the plating solution. A current also flows to the current-carrying portion 5 of the portion, and as a result, the current density to the entire exposed portion 7a in the large number of patterns 7 in the plating area 3 of the substrate decreases, and the plating area 3 has a predetermined thickness. However, there is a problem that the time required to form the plating film becomes long. In particular, the soaking occurs in some places and in some places as shown by the presence or absence of the arrow 91 in FIG. 13, and the current density is reduced in the pattern 7 in the portion having the soaking, that is, the portion 92 close to the supporting region 4. Is large, and the film thickness of the portion 92 becomes particularly thin as compared with the film thickness of the pattern of other portions, resulting in a large variation in the film thickness of the plated film of each pattern 7 in the entire plating region 3. There was a point.

【0006】本願発明のメッキ装置は上記従来技術の問
題点(技術的課題)を解決する為に提供するものであ
る。第1の目的は、メッキ用領域に微小物形成用の多数
のパターンが備えられている基板を用いて多数の微小物
の形成を行う場合、メッキ用の陽極と基板における通電
部間にメッキ用の電流を供給することにより、上記メッ
キ用領域の多数のパターンの各々に対して夫々メッキ液
からメッキ用の電流を流し、それらの全てのパターンに
一斉にメッキ膜を成膜させることができて、多数の微小
物を効率良く形成できるようにしたメッキ装置を提供す
ることである。第2の目的は、上記メッキの場合、基板
における通電部及び導電面の裏側へのメッキ液の染み込
みをパッキンの利用によって阻止することにより、メッ
キ液から通電部へ電流が流れることを防止し、上記多数
のパターンの開口部へ所定の電流密度を予定通り印加で
きるようにすることである。そしてそのことによって、
メッキ時間を長くすることなく上記多数のパターンに所
定の厚みのメッキ膜を形成できるようにすることであ
る。第3の目的は、基板の周辺において通電部近くにあ
るパターンにも所定通りの電流密度でメッキ用の電流を
流すことができるようにすることである。そのことによ
って、基板の周辺近くの部分での膜厚の大きなばらつき
を防止できるようにすることである。第4の目的は、上
記パッキンを備えていても、基板の通電部へのメッキ用
の電流の供給は何等支障無く行うことができるようにす
ることによって、上記多数のパターンに対して一斉に、
しかも周辺部のパターンまでメッキ膜の膜厚を均一化し
た状態でメッキができるようにすることである。他の目
的及び利点は図面及びそれに関連した以下の説明により
容易に明らかになるであろう。
The plating apparatus of the present invention is provided to solve the above-mentioned problems (technical problems) of the prior art. The first purpose is to perform plating between the anode for plating and the current-carrying part of the substrate when forming a large number of minute objects using a substrate having a large number of patterns for forming minute objects in the plating area. By supplying the electric current of, the electric current for plating is made to flow from the plating solution to each of the numerous patterns in the above-mentioned plating area, and the plating film can be simultaneously formed on all of these patterns. Another object of the present invention is to provide a plating apparatus capable of efficiently forming a large number of minute objects. The second purpose is to prevent the current from flowing from the plating solution to the current-carrying part by using the packing to prevent the plating solution from soaking into the current-carrying part and the back side of the conductive surface of the substrate in the case of the above-mentioned plating. The purpose is to allow a predetermined current density to be applied to the openings of the large number of patterns as planned. And by that,
It is to be able to form a plating film having a predetermined thickness on the above-mentioned many patterns without increasing the plating time. A third object is to allow the plating current to flow at a predetermined current density even in a pattern near the current-carrying portion on the periphery of the substrate. By doing so, it is possible to prevent a large variation in the film thickness near the periphery of the substrate. A fourth object is that even if the packing is provided, it is possible to supply the plating current to the current-carrying portion of the substrate without any trouble, so that a large number of patterns can be simultaneously processed.
Moreover, it is possible to perform plating in a state where the thickness of the plating film is uniform even up to the peripheral pattern. Other objects and advantages will be readily apparent from the drawings and the following description related thereto.

【0007】[0007]

【課題を解決するための手段】上記目的を達成する為
に、本願発明におけるメッキ装置は、メッキ液を貯留す
る為のメッキ槽と、上記メッキ槽内に備えさせたメッキ
用の陽極と、上記メッキ槽内においてメッキ用の基板を
保持する為のホルダーとを有し、上記ホルダーは基板に
おける導電面の中央部のメッキ用領域をメッキ液に露出
させる為の開口部を備えておって、上記開口部に露出す
るメッキ用領域を、上記メッキ槽内に貯留するメッキ液
中に浸漬させて、上記陽極と上記基板の導電面との間に
メッキ用の電流を通電することにより、上記メッキ用領
域にメッキするようにしているメッキ装置において、上
記ホルダーにおける上記開口部の周囲の支持部材には、
該支持部材と上記基板における導電面の周辺の支持用領
域との間を水密的にシールして、導電面の周縁にある通
電部に向けてメッキ液が染み込むことを阻止する為の環
状のパッキンを備えると共に、上記基板の通電部との電
気的接続を行う為の通電部材を備えたものである。
To achieve the above object, a plating apparatus according to the present invention comprises a plating tank for storing a plating solution, a plating anode provided in the plating tank, and A holder for holding a substrate for plating in a plating tank, the holder having an opening for exposing a plating region at a central portion of a conductive surface of the substrate to a plating liquid, The plating area exposed in the opening is immersed in the plating solution stored in the plating bath, and a plating current is passed between the anode and the conductive surface of the substrate to form the plating area. In the plating device for plating the area, the support member around the opening in the holder is
An annular packing for water-tightly sealing between the supporting member and a supporting area around the conductive surface of the substrate to prevent the plating solution from seeping into the current-carrying portion at the periphery of the conductive surface. And a current-carrying member for electrically connecting to the current-carrying portion of the substrate.

【0008】[0008]

【作用】メッキ用領域に微小物形成用の多数のパターン
が備えられた基板をホルダーによって保持し、その基板
のメッキ用領域を、メッキ槽内に貯留するメッキ液中に
浸漬させる。そして陽極と上記基板との間にメッキ用の
電流を通電する。基板の側の通電は、基板の周縁に備わ
っている通電部に通電部材が接続するので、その接続部
材を通じて行うことができる。上記のように通電すると
電流は陽極からメッキ液に流れ、更にその電流はメッキ
液から、上記メッキ用領域における基板上の多数のパタ
ーンの開口に流れる。その結果、各パターンにメッキ膜
が成膜される。上記の場合、パッキンはメッキ液が基板
の周縁にある通電部に向けて染み込むことを防止する。
従って上記メッキ液から基板への電流の流れは上記パタ
ーンの部分に対してのみ行われる。その結果、多数のパ
ターンの部分への電流密度が予定通りの値となり、何れ
のパターンにおいても予定通りの膜厚のメッキ膜を得る
ことができる。
A holder holds a substrate having a large number of patterns for forming minute objects in the plating region, and the plating region of the substrate is immersed in a plating solution stored in a plating bath. Then, a plating current is passed between the anode and the substrate. The energization on the substrate side can be performed through the connecting member because the energizing member is connected to the energizing portion provided on the peripheral edge of the substrate. When energized as described above, a current flows from the anode to the plating solution, and further the current flows from the plating solution to the openings of a large number of patterns on the substrate in the plating area. As a result, a plating film is formed on each pattern. In the above case, the packing prevents the plating liquid from permeating toward the current-carrying portion at the peripheral edge of the substrate.
Therefore, the flow of current from the plating solution to the substrate is performed only on the pattern portion. As a result, the current densities to a large number of pattern portions have predetermined values, and it is possible to obtain a plated film having a predetermined film thickness in any pattern.

【0009】[0009]

【実施例】以下本願の実施例を示す図面について説明す
る。メッキ装置を示す図1において、Aは周知のメッキ
槽を示す。11はメッキ槽Aにおいてメッキ液を貯留する
為の槽本体である。被メッキ物である基板Dの寸法に対
し、メッキ槽Aとしては槽本体11の内部空間の平面形状
が1辺あたり1インチ程度大きい矩形のものが用いられ
る。12はメッキ液の流入口、13はメッキ液のオーバーフ
ロー口、14はオーバーフロー受け、15はオーバーフロー
したメッキ液の排出口である。16は槽本体11内のメッキ
液を示し、メッキする金属に応じた通常の電解液を用い
る。18は基板の下面においてメッキ液を攪拌する為のパ
ドルで、図示外の駆動装置によって基板Dの下面に沿っ
て矢印方向に往復動させるようにしてある。次にBは陽
極で、メッキする金属の例えば板材が用いられ、槽本体
11内において周知の如く固定的に保持される。次にCは
メッキを施すべき基板Dをメッキ槽A内のメッキ液16に
浸漬した状態で保持するためのホルダーである。次にE
はメッキ用の通電手段を示し、20は直流電源、21,22は
通電用の電線である。次にFは上記メッキ槽A内へのメ
ッキ液の循環機構を示し、23はリザーバータンク、28は
メッキ液循環用のポンプである。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. In FIG. 1, which shows a plating apparatus, A indicates a well-known plating tank. Reference numeral 11 denotes a bath main body for storing the plating solution in the plating bath A. As for the plating tank A, a rectangular one in which the planar shape of the internal space of the tank main body 11 is larger by about 1 inch per side than the size of the substrate D which is the object to be plated is used. Reference numeral 12 is an inlet for the plating solution, 13 is an overflow opening for the plating solution, 14 is an overflow receiver, and 15 is an outlet for the overflowing plating solution. Reference numeral 16 denotes a plating solution in the tank body 11, and a normal electrolytic solution is used according to the metal to be plated. Reference numeral 18 denotes a paddle for stirring the plating liquid on the lower surface of the substrate, which is reciprocated in the direction of the arrow along the lower surface of the substrate D by a driving device (not shown). Next, B is an anode, and a plate metal such as a plate material is used.
It is fixedly held in 11 as is well known. Next, C is a holder for holding the substrate D to be plated in a state of being immersed in the plating solution 16 in the plating tank A. Then E
Indicates a current-carrying means for plating, 20 is a DC power supply, and 21 and 22 are electric current wires. Next, F represents a mechanism for circulating the plating solution in the plating tank A, 23 is a reservoir tank, and 28 is a pump for circulating the plating solution.

【0010】次に上記ホルダーCを示す図2について説
明する。該ホルダーCは基板Dを収容する為の本体C1
と、本体C1内において基板Dを押さえる為の押え体C2
と、押え体C2に押し付け力を与える為の押え機構C3とか
ら構成している。
Next, FIG. 2 showing the holder C will be described. The holder C is a main body C1 for accommodating the substrate D.
And a presser body C2 for pressing the substrate D in the main body C1.
And a pressing mechanism C3 for applying a pressing force to the pressing body C2.

【0011】先ず本体C1を示す図3について説明する。
本体C1はベースとなる基枠C11と、基板Dの保持及びそ
れへの通電の為のカソードリングC12と、カソードリン
グC12を基枠C11に止着するための止着具C13とから構
成している。先ず基枠C11を説明する。該基枠C11は電
気的な絶縁材料例えば耐熱塩化ビニルで形成している。
33は基枠C11における中空部で、押え体C2を収容可能な
内径D1を有している。34,35は槽本体11に対する止付片
で、図2のように槽本体11に備えられている受片36,37
に乗載させる為の物であり、受片36,37に対しねじ止め
で固定するようにしている。34a,35aはそのねじ止め
用のボルトを挿通させる為の透孔を示す。38はカソード
リング装着用の凹部、39は電極体挿通用の透孔を示す。
図2の41,42は押え機構C3を連結する為の部材で、夫々
元部41a,42aを基枠C11内に埋め込み状に固定したボ
ルトを例示する。
First, FIG. 3 showing the main body C1 will be described.
The main body C1 includes a base frame C11 serving as a base, a cathode ring C12 for holding the substrate D and energizing the substrate D, and a fastener C13 for fastening the cathode ring C12 to the base frame C11. There is. First, the base frame C11 will be described. The base frame C11 is made of an electrically insulating material such as heat-resistant vinyl chloride.
33 is a hollow portion in the base frame C11, and has an inner diameter D1 capable of accommodating the pressing body C2. Numerals 34 and 35 are stopper pieces for the tank body 11, and receiving pieces 36 and 37 provided in the tank body 11 as shown in FIG.
It is intended to be mounted on and is fixed to the receiving pieces 36 and 37 with screws. Reference numerals 34a and 35a indicate through holes for inserting the bolts for screwing. Reference numeral 38 indicates a recess for mounting the cathode ring, and 39 indicates a through hole for inserting the electrode body.
Reference numerals 41 and 42 in FIG. 2 are members for connecting the holding mechanism C3, and exemplify bolts in which the base portions 41a and 42a are embedded and fixed in the base frame C11.

【0012】次にカソードリングC12を示す図4〜7に
ついて説明する。該カソードリングC12は図4に示すリ
ング本体C21と、メッキ中において基板Dの通電部5へ
向けてのメッキ液の染み込みを防止する為の環状のパッ
キンC22と、パッキンC22の存在に係わらず基板Dの通
電部5との電気的接続を行う為の通電部材C23とを備え
ている。通電部材C23は、基板Dにおけるメッキ用領域
3の全体のパターン7に対するメッキに必要な電流を、
メッキ用領域3の全域において電流が均一化する状態で
流すことができるように、複数箇所例えば本例では8箇
所に設けている。
Next, FIGS. 4 to 7 showing the cathode ring C12 will be described. The cathode ring C12 is a ring body C21 shown in FIG. 4, an annular packing C22 for preventing the plating solution from seeping into the current-carrying part 5 of the substrate D during plating, and the substrate regardless of the presence of the packing C22. And a current-carrying member C23 for electrically connecting to the current-carrying portion 5 of D. The current-carrying member C23 supplies the current necessary for plating the entire pattern 7 of the plating region 3 on the substrate D,
It is provided at a plurality of locations, for example, eight locations in this example, so that the current can be made to flow in a uniform state in the entire plating area 3.

【0013】先ずリング本体C21を説明する。該本体C
21は基板Dを保持するに足る強度と、メッキ液に対する
耐食性と、通電の為の導電性とを兼ね備えた材料例えば
ステンレスで形成している。43は環状のベース部で、図
3に示されるように前記凹部38内にぴったり嵌合する大
きさに形成している。44は基板の導入部で、基板の導入
が容易なよう基板の直径例えば150mmよりもやや大き
い直径D2例えば150.5mmに形成している。45は基板
Dの位置決部で、基板Dを該リング本体C21に対して半
径方向に正確に位置づけできるよう予定される基板Dの
直径(150mm)に対してほんの僅かだけ大きい直径D3
例えば150.3mmに形成している。46は基板Dにおけ
る支持用領域4を支えるための環状の支持部材である。
支持部材46の厚みT1は、メッキ時において基板Dのメッ
キ用領域3(メッキ時には下面となっている)へのメッ
キ液の流れを良くすると共に、該支持部材46の内周側に
おいて上記基板の下面に気泡がたまらぬようにするため
にできるだけ薄くすると良い。例えば本例では0.6mm
である。支持部材46の内周縁47は上記メッキ用領域3へ
のメッキ液の流れを円滑化すると共に電界集中の防止の
為に図示の如く傾斜させている。角度θ1は例えば30
゜程度である。48は支持部材46の内側の開口部を示し、
基板Dのメッキ用領域3をメッキ液に露出させる為にメ
ッキ用領域3の直径と対応する直径例えば143.3mm
に形成している。49はパッキンC22の周縁部を嵌合させ
る為の嵌合溝で、ベース部43の全周に形成している。図
3に示す50は止着具C13における押え板を嵌合させる為
の嵌合部で、ベース部43の全周にわたって形成してい
る。51は電極棒の連結部として例示するねじ孔である。
First, the ring body C21 will be described. The body C
The reference numeral 21 is formed of a material having sufficient strength for holding the substrate D, corrosion resistance against a plating solution, and conductivity for energization, such as stainless steel. Reference numeral 43 denotes an annular base portion which is sized so as to fit snugly in the recess 38 as shown in FIG. Reference numeral 44 denotes a substrate introduction portion, which is formed to have a diameter D2, for example, 150.5 mm, which is slightly larger than the diameter of the substrate, for example, 150 mm so that the substrate can be easily introduced. Reference numeral 45 denotes a positioning portion of the substrate D, which has a diameter D3 which is slightly larger than the diameter (150 mm) of the substrate D which is designed to accurately position the substrate D in the radial direction with respect to the ring body C21.
For example, it is formed to 150.3 mm. Reference numeral 46 is an annular supporting member for supporting the supporting area 4 on the substrate D.
The thickness T1 of the supporting member 46 improves the flow of the plating solution to the plating region 3 (which is the lower surface during plating) of the substrate D during plating, and the thickness T1 of the substrate on the inner peripheral side of the supporting member 46 is increased. It should be as thin as possible to prevent air bubbles from collecting on the bottom surface. For example, 0.6mm in this example
Is. The inner peripheral edge 47 of the support member 46 is inclined as shown in order to smooth the flow of the plating solution to the plating region 3 and to prevent the electric field concentration. The angle θ1 is, for example, 30
It is about ゜. 48 indicates an opening inside the support member 46,
A diameter corresponding to the diameter of the plating area 3 for exposing the plating area 3 of the substrate D to the plating solution, for example, 143.3 mm
Is formed. 49 is a fitting groove for fitting the peripheral portion of the packing C22, which is formed on the entire circumference of the base portion 43. Reference numeral 50 shown in FIG. 3 is a fitting portion for fitting the holding plate of the fastener C13, which is formed over the entire circumference of the base portion 43. Reference numeral 51 is a screw hole exemplified as a connecting portion of the electrode rod.

【0014】次にパッキンC22を説明する。該パッキン
C22は水密性の高い材料で形成されたものが用いられ
る。例えば本例ではバイトンを用いている。C22aは該
パッキンC22において基板Dと密着させる為の上面、C
22bは支持部材46と密着させる為の下面を示し、何れも
各々の部材に対する水密的に密着するように構成してい
る。例えばパッキンの弾性変形を利用してそれらへの密
着が可能となるようにしている。下面C22bは接着によ
って上記支持部材46に水密的密着をさせても良い。該パ
ッキンC22の内径は、基板Dのメッキ用領域3をメッキ
液に対して遮ることなく露出させ、かつパッキンC22の
上面における内周部分C22a’を、基板Dの支持用領域
4においてマスク6が存在している部分4aと重合させ得
る寸法、例えば開口部48の直径と同寸法に形成してい
る。尚図7の幅W1は4mm程度、厚みT2は、基板Dと支持
部材46との間に挟まれて両者間での水密性の保持が可能
となる弾性を発揮できる厚み、例えば1.1mmにしてい
る。52は前記溝49に対する嵌合部、53は通電部材C23を
位置させる為の透孔で、その場所は、基板Dにおける通
電部5と対向する状態となる場所に定めている。透孔53
の幅W2及び長さL1は、通電部材C23との干渉を防止する
為に通電部材C23の平面寸法よりも十分に大きく形成
し、例えば幅W2が2mm、長さL1が7.5mm程度である。
尚通電部材C23との図6に示される隙間G1は例えば0.
5mm程度である。上記パッキンC22は前記溝49に対する
上記嵌合部52の嵌合によってリング本体C21に対し止着
しても良いが、パッキンC22の下面を支持部材46の上面
に接着剤で接着し、支持部材46に対するパッキンC22の
固定と同時に上記両面間での水密性の保持をも行わせる
ようにしても良い。
Next, the packing C22 will be described. The packing C22 is made of a material having high watertightness. For example, Viton is used in this example. C22a is an upper surface for adhering to the substrate D in the packing C22, C
Reference numeral 22b denotes a lower surface for closely contacting with the support member 46, and each is configured to be watertightly adhered to each member. For example, the elastic deformation of the packing is used to enable close contact with them. The lower surface C22b may be adhered to the support member 46 in a watertight manner by adhesion. The inner diameter of the packing C22 exposes the plating area 3 of the substrate D without blocking the plating solution, and the inner peripheral portion C22a 'on the upper surface of the packing C22 is covered by the mask 6 in the supporting area 4 of the substrate D. It is formed to have a size that allows it to overlap with the existing portion 4a, for example, the same size as the diameter of the opening 48. Note that the width W1 in FIG. 7 is about 4 mm, and the thickness T2 is sandwiched between the substrate D and the support member 46 so as to exhibit elasticity such that watertightness can be maintained therebetween, for example, 1.1 mm. ing. Reference numeral 52 is a fitting portion for the groove 49, and 53 is a through hole for positioning the current-carrying member C23, and the location thereof is defined at a location facing the current-carrying portion 5 on the substrate D. Through hole 53
Has a width W2 and a length L1 which are sufficiently larger than the plane dimension of the current-carrying member C23 in order to prevent interference with the current-carrying member C23. For example, the width W2 is 2 mm and the length L1 is about 7.5 mm. .
The gap G1 shown in FIG. 6 with the current-carrying member C23 is, for example, 0.
It is about 5 mm. The packing C22 may be fixed to the ring body C21 by fitting the fitting portion 52 into the groove 49. However, the lower surface of the packing C22 is adhered to the upper surface of the support member 46 with an adhesive to form the support member 46. At the same time that the packing C22 is fixed to the above, watertightness may be maintained between both surfaces.

【0015】次に通電部材C23を説明する。該通電部材
C23は良好な導電性とばね性を備えた材料で形成するの
が良い。本例ではインコネルを用いている。56は支持部
材46に対する止付部で、機械的に充分な強度で且つ電気
的には良好な導通状態が得られるように止め付けてい
る。例えばスポット溶着手段によって溶着させている。
57は腕部で、接触片58を基板Dに対して良好な導通が得
られる状態に圧接させるだけのばね性を持たせてある。
接触片58は基板Dの通電部5と重合する位置に設けてい
る。上記通電部材C23の寸法の一例は、厚みが0.1m
m、幅W3が1mm、長さL2が2mm、L3が1.5mm、L4が1m
m、角度θ2が30゜である。支持部材46の上面から接
触片58の上面までの高さH1は、基板Dの下面がパッキン
C22の上面に接触した状態において、基板Dの通電部5
に対する接触片58の充分な接触圧を得ることができるよ
うパッキンC22の厚みT2よりも大きく例えば1.3mm程
度となるようにしている。該通電部材C23と上記パッキ
ンC22との平面的位置関係は、パッキンC22が支持用領
域に密着して通電部5へ向けてのメッキ液の染み込みを
防止し、かつその状態において、通電部材C23が通電部
5に電気的に接続するよう、通電部材C23をパッキンC
22の透孔53内に位置させている。この状態では、パッキ
ンC22において透孔53よりも内周側の部分54が上記通電
部5へのメッキ液の染み込みを防止する。
Next, the energizing member C23 will be described. The current-carrying member C23 is preferably made of a material having good conductivity and spring properties. Inconel is used in this example. Reference numeral 56 is a fixing portion for the supporting member 46, which is mechanically sufficiently strong and electrically fixed so that a good conduction state can be obtained. For example, it is welded by spot welding means.
Reference numeral 57 denotes an arm portion, which is provided with a spring property enough to press the contact piece 58 against the substrate D in a state where good conduction is obtained.
The contact piece 58 is provided at a position where it overlaps with the current-carrying portion 5 of the substrate D. An example of the dimensions of the current-carrying member C23 is that the thickness is 0.1 m.
m, width W3 1mm, length L2 2mm, L3 1.5mm, L4 1m
m, the angle θ2 is 30 °. The height H1 from the upper surface of the support member 46 to the upper surface of the contact piece 58 is such that the lower surface of the substrate D is in contact with the upper surface of the packing C22, and the current-carrying portion 5 of the substrate D is 5.
In order to obtain a sufficient contact pressure of the contact piece 58 with respect to the contact piece 58, the thickness is larger than the thickness T2 of the packing C22, for example, about 1.3 mm. The planar positional relationship between the current-carrying member C23 and the packing C22 is such that the packing C22 is in close contact with the supporting area to prevent the plating solution from seeping into the current-carrying portion 5, and in that state, the current-carrying member C23 is Pack the conductive member C23 with the packing C so that the conductive member 5 is electrically connected.
It is located in the through hole 53 of 22. In this state, in the packing C22, the portion 54 on the inner peripheral side of the through hole 53 prevents the plating liquid from soaking into the conducting portion 5.

【0016】次に図3のC24は上記リング本体C21への
通電の為の電極体を示す。61は電極棒として例示するボ
ルトで、前記透孔39に挿通しねじ孔51に螺合させること
によってリング本体C21との導通を図るようにしてい
る。62は接続端子で、前記電線22を接続させる為の物で
あり、一対のナット63でもって上記ボルト61に止着して
いる。
Next, C24 in FIG. 3 shows an electrode body for energizing the ring body C21. Reference numeral 61 denotes a bolt exemplified as an electrode rod, which is inserted into the through hole 39 and screwed into the screw hole 51 so as to establish electrical connection with the ring body C21. Reference numeral 62 is a connection terminal for connecting the electric wire 22, which is fixed to the bolt 61 by a pair of nuts 63.

【0017】次に図3に基づき止着具C13について説明
する。66はリング本体C21のベース部43を凹部38に押さ
え付ける為の押え板で、周知の構成によって基枠C11に
止着するようになっている。70は基枠C11の凹部38とリ
ング本体C21におけるベース部43との間へのメッキ液の
侵入防止及び上記ベース部43と押え板66との間の絶縁の
為のリング体で、例えばテフロン製である。
Next, the fastener C13 will be described with reference to FIG. A pressing plate 66 presses the base portion 43 of the ring body C21 against the recess 38, and is fixed to the base frame C11 by a known structure. Reference numeral 70 denotes a ring body for preventing the plating solution from entering between the recess 38 of the base frame C11 and the base portion 43 of the ring body C21 and for insulating the base portion 43 and the holding plate 66 from each other. Is.

【0018】上記構成の本体C1の組立は次の通り。先ず
リング本体C21にパッキンC22や通電部材C23を止着し
てカソードリングC12を組み立てる。次にそのカソード
リングC12のベース部43を凹部38に位置させ、次に絶縁
リング70、押え板66の順に組み込み、押え板66を基枠C
11に固定する。次に予め接続端子62を取付けたボルト61
を透孔39を通してねじ孔51に螺合させる。以上で本体C1
の組立が完了する。
The assembly of the main body C1 having the above structure is as follows. First, the packing C22 and the current-carrying member C23 are fixed to the ring body C21 to assemble the cathode ring C12. Next, the base portion 43 of the cathode ring C12 is positioned in the recess 38, then the insulating ring 70 and the holding plate 66 are assembled in this order, and the holding plate 66 is attached to the base frame C.
Fix to 11. Next, the bolt 61 with the connection terminal 62 attached beforehand
Is screwed into the screw hole 51 through the through hole 39. Main body C1
Is completed.

【0019】次に押え体C2を図2、3に基づき説明す
る。該押え体C2は樹脂材料例えば耐熱塩化ビニルで形成
しており、図3に示される上半部72は基枠C11内への入
り込みが可能なようその内径に対応する外径D4例えば1
50.5mmに形成し、下半部73はカソードリングC12の
本体C21における導入部44内への入り込みが可能なよう
その内径に対応する外径D5例えば150.2mmに形成し
ている。74は基板Dを押えるための押え部で、クッショ
ン部材76を介して押さえ付けを行うようにしている。75
はクッション部材76の横ずれ防止のための段部を示す。
クッション部材76は基板Dを過度に押さえ付けてそれを
破損させることを防止する為の物で、弾力性を備えた材
料例えばゴム製のOリングを用いる。図2に示す79は押
え体C2の中心位置に設けた押え力の受部である。
Next, the pressing body C2 will be described with reference to FIGS. The retainer C2 is made of a resin material such as heat-resistant vinyl chloride, and the upper half 72 shown in FIG. 3 has an outer diameter D4 corresponding to the inner diameter of the base frame C11 so that it can be inserted into the base frame C11.
The lower half 73 is formed to have an outer diameter D5 corresponding to the inner diameter thereof, for example, 150.2 mm so that the lower half 73 can be inserted into the introduction portion 44 of the body C21 of the cathode ring C12. Reference numeral 74 denotes a pressing portion for pressing the substrate D, which is pressed through the cushion member 76. 75
Shows a step portion for preventing lateral displacement of the cushion member 76.
The cushion member 76 is a member for preventing the substrate D from being excessively pressed and being damaged, and is made of an elastic material such as an O-ring made of rubber. Reference numeral 79 shown in FIG. 2 is a pressing force receiving portion provided at the center position of the pressing body C2.

【0020】次に押え機構C3を図2、3に基づき説明す
る。82は押えアーム、83は上記受部79を押さえ付けるた
めの押え部で、アーム82の一面をもって構成している。
84,86はアーム82の一端及び他端に設けた本体C1との連
結部で、夫々ボルト41,42を貫通させるための透孔84
a,86aを形成している。87,87は連結部84,86を本体
C1に対して締着するための締め具で、夫々ボルト41,42
との螺合を可能に構成しており、又手による操作の為に
握りやすい大きさに形成している。
Next, the pressing mechanism C3 will be described with reference to FIGS. Reference numeral 82 is a holding arm, and 83 is a holding portion for holding the receiving portion 79, which is constituted by one surface of the arm 82.
Reference numerals 84 and 86 denote connecting portions with the main body C1 provided at one end and the other end of the arm 82, and through holes 84 for passing the bolts 41 and 42, respectively.
a and 86a are formed. 87,87 is a connecting part 84,86 main body
Fasteners for fastening to C1, bolts 41, 42 respectively
It is configured so that it can be screwed in and is formed in a size that is easy to grasp for manual operation.

【0021】上記構成のホルダCに対する基板Dの装填
を説明する。図2の状態から締め具87を除去し、アーム
82を除去し、押え体C2を本体C1内から除去する。その状
態において、マスク6によるパターンの形成が済んでい
る基板Dを本体C1内に装入し、該板Dをが位置決部45の
内側に位置させる。この状態では、通電部5が通電部材
C23における接触片58の上に乗る状態となる。尚上記基
板Dの装入の場合、本体C1を上下反転させた状態で保持
し、基板Dを下から上へ向けて本体C1内に装入し、その
後本体C1の反転を戻すと作業が楽で良い。次に予めクッ
ション部材76を装着した押え体C2を図3の如く本体C1内
に装入する。次にアーム82を図2の状態に装着し、締め
具87,87をボルト41,42に螺合させ、該締め具87を締め
てアーム82を本体C1に固定する。これによりアーム82の
押え部83が受部79を押さえ付ける。その押え力は押え部
74からクッション部材76を介して基板Dに加わり、基板
Dを通電部材C23における腕部57のばね力に抗して押し
沈める。その結果、腕部57は弾力的に撓み、接触片58は
基板Dの通電部5に圧接して両者間での良好な電気的導
通状態が達成される。又パッキンC22の上面C22aは支
持用領域4において通電部5からその内側のマスク6で
覆われた部分4aに跨る状態で密着し、通電部5へ向けて
のメッキ液の侵入を阻止する状態となる。上記のような
基板Dの押さえ付けの場合、受部79は押え体C2の中心に
あるので、押え部74はその全周部分にわたりクッション
部材76を介して基板Dを均一な力で押える。その結果、
パッキンC22の上面と基板Dにおける支持用領域4の下
面の密着は全周において良好に行われる。
Loading of the substrate D into the holder C having the above structure will be described. Remove the fastener 87 from the state of FIG.
82 is removed, and the presser body C2 is removed from the inside of the main body C1. In this state, the substrate D on which the pattern has been formed by the mask 6 is loaded into the main body C1 and the plate D is positioned inside the positioning section 45. In this state, the energizing portion 5 is in a state of resting on the contact piece 58 of the energizing member C23. In the case of loading the above-mentioned substrate D, holding the main body C1 upside down, loading the substrate D into the main body C1 from bottom to top, and then reversing the main body C1 makes the work easier. Good. Next, the presser body C2 to which the cushion member 76 is previously attached is loaded into the main body C1 as shown in FIG. Next, the arm 82 is mounted in the state shown in FIG. 2, the fasteners 87, 87 are screwed onto the bolts 41, 42, and the fastener 87 is tightened to fix the arm 82 to the main body C1. As a result, the holding portion 83 of the arm 82 presses the receiving portion 79. The holding force is the holding part
The board 74 is applied to the board D through the cushion member 76, and the board D is pushed down against the spring force of the arm portion 57 of the current-carrying member C23. As a result, the arm portion 57 elastically bends, and the contact piece 58 is brought into pressure contact with the current-carrying portion 5 of the substrate D to achieve a good electrical conduction state between the two. In addition, the upper surface C22a of the packing C22 is in close contact with the support area 4 from the current-carrying portion 5 to the portion 4a covered with the mask 6 inside the support area 4 to prevent the plating solution from entering the current-carrying portion 5. Become. In the case of pressing the substrate D as described above, since the receiving portion 79 is at the center of the pressing body C2, the pressing portion 74 presses the substrate D with the uniform force through the cushion member 76 over the entire peripheral portion thereof. as a result,
Adhesion between the upper surface of the packing C22 and the lower surface of the supporting region 4 on the substrate D is favorably performed over the entire circumference.

【0022】次に上記基板Dへのメッキの操作を説明す
る。上記基板Dを装填したホルダーCを予めメッキ液16
を準備したメッキ槽Aに装填する。即ち、止付片34,35
を受片36,37に乗せ、止付ねじでもって固定する。この
状態では開口部48に露出するメッキ用領域がメッキ液中
に浸漬する。次に循環機構Fを作動させ、所定の温度の
メッキ液が所定の流量で循環するようにする。又パドル
18を所定通り往復作動させる。次に電源20から所定値の
メッキ用の電流を陽極Bと基板における導電面との間に
通電する。これにより基板Dのメッキ用領域においては
多数の微細なパターン7の開口内の下地膜2が露出して
いる部分7aに順次成膜がなされていく。上記状態で所定
厚のメッキ膜を形成する為の所定時間が経過したなら
ば、上記通電を停止し、ホルダーCをメッキ槽Aから引
き上げ、基板DをホルダーCから外し、所定の後処理を
行ってメッキ操作が完了する。
Next, the operation of plating the substrate D will be described. The holder C loaded with the substrate D is preliminarily plated with the plating solution 16
Is loaded into the prepared plating tank A. That is, the stopper pieces 34, 35
Place on the receiving pieces 36, 37 and fix with the set screw. In this state, the plating area exposed at the opening 48 is immersed in the plating solution. Next, the circulation mechanism F is operated so that the plating solution having a predetermined temperature circulates at a predetermined flow rate. Paddle again
Reciprocate 18 as specified. Next, a current for plating of a predetermined value is applied from the power source 20 between the anode B and the conductive surface of the substrate. As a result, in the plating area of the substrate D, film formation is sequentially performed on the portion 7a in which the base film 2 is exposed in the openings of the numerous fine patterns 7. When a predetermined time for forming a plating film of a predetermined thickness has passed in the above state, the energization is stopped, the holder C is pulled up from the plating tank A, the substrate D is removed from the holder C, and a predetermined post-treatment is performed. Complete the plating operation.

【0023】次に上記メッキの場合における通電の状態
について説明する。電源20のプラス端子から出た電流は
電線21を通って陽極Bに至る。該電流は陽極Bからイオ
ンを介在してメッキ液16に流れ、更にメッキ液16から基
板Dのメッキ用領域における多数のパターン7内の下地
膜2が露出している部分7aに至る。そしてその部分7aを
通して下地膜2に流れ、通電部5に至る。通電部5から
は通電部材C23を経てリング本体C21に流れ、更に該リ
ング本体C21から電極体C24の電極棒61を経て接続端子
62に流れる。そして電線22を通って電源20のマイナス端
子に戻る。
Next, the state of energization in the above plating will be described. The current output from the positive terminal of the power source 20 reaches the anode B through the electric wire 21. The current flows from the anode B to the plating solution 16 via the ions, and further from the plating solution 16 to the portion 7a where the underlying film 2 in the many patterns 7 in the plating region of the substrate D is exposed. Then, it flows to the base film 2 through the portion 7a and reaches the conducting portion 5. From the current-carrying part 5 through the current-carrying member C23 to the ring main body C21, and further from the ring main body C21 through the electrode rod 61 of the electrode body C24 to the connection terminal.
It flows to 62. Then, it returns to the negative terminal of the power source 20 through the electric wire 22.

【0024】上記の場合、支持部材46の上面と、基板D
の下面において支持用領域4における通電部5の内周側
のマスク6で覆われている部分4aとの間にはパッキンC
22が密着状に介在している為、メッキ液16は下地膜2が
露出している通電部5に向けて染み込むことはない。従
ってメッキ液16から直接に通電部5に電流が流れること
はなく、上記多数のパターン7内の下地膜2が露出して
いる部分7aに流れる電流密度は当初予定された通りの電
流密度となり、そこへのメッキ膜の成膜は予定通りに行
われ、予定通りの厚みのメッキ膜を得ることができる。
In the above case, the upper surface of the support member 46 and the substrate D
A packing C is provided between the lower surface of the support area 4 and the portion 4a of the energizing portion 5 on the inner peripheral side covered with the mask 6.
The plating liquid 16 does not soak into the current-carrying portion 5 where the undercoat film 2 is exposed because 22 is closely attached. Therefore, the current does not directly flow from the plating solution 16 to the current-carrying portion 5, and the current density flowing in the portion 7a in which the underlying film 2 in the many patterns 7 is exposed becomes the current density as originally planned, The plating film is formed on the film as scheduled, and the plating film having the expected thickness can be obtained.

【0025】次に図8〜10は、通電部材とパッキンと
の位置関係が異なると共に、通電部材が基板Dの通電部
5を電気的に接続させる場所の異なる例を示すもので、
通電部材C23eをパッキンC22eの外周側に設けると共
に、基板Dの通電部5をリング本体C21eにおけるベー
ス部43eに接続させるようにした例を示すものである。
図において、94はベース部43eにおける通電部材の取付
部を示し、取付用のねじ孔94aを備えさせている。通電
部材C23eにおける止付部56eは上記取付部94に対する
ものであり、止付用の透孔を備える。95は上記止め付け
を行う為の止付具として例示するビスである。又図10
に示す97は、パッキンC22eにおいて通電部材C23eの
接触片58eを避けるために形成した欠如部である。この
ような構成のものにあっては、基板Dを装填する場合、
基板Dの支持用領域4の下面が先ずパッキンC22eの上
面に接触し、基板Dを支持部材46eに向け更に押し下げ
ることにより、パッキンC22eが押し縮められて通電部
5の下面が接触片58eの上面に接触する。従って装填状
態においては、基板Dの支持用領域4を覆っているマス
ク6の下面と支持部材46eの上面との間にパッキンC22
eが密着状に介在して、基板Dの通電部5に向けてのメ
ッキ液の染み込みを防止する。又通電部5と接触片58e
との接触によって、通電部5から通電部材C23eを介し
てリング本体C21eのベース部43eへの通電が可能とな
る。なお、機能上前図のものと同一又は均等の構成で説
明が重複すると考えられる部分には、前図と同一の符号
にアルファベットのeを付して重複する説明を省略し
た。
Next, FIGS. 8 to 10 show an example in which the positional relationship between the current-carrying member and the packing is different and where the current-carrying member electrically connects the current-carrying portion 5 of the substrate D.
In this example, the energizing member C23e is provided on the outer peripheral side of the packing C22e, and the energizing portion 5 of the substrate D is connected to the base portion 43e of the ring body C21e.
In the figure, reference numeral 94 denotes a mounting portion of the conductive member on the base portion 43e, which is provided with a screw hole 94a for mounting. The fixing portion 56e of the current-carrying member C23e is for the mounting portion 94 and has a fixing through hole. Reference numeral 95 denotes a screw as an example of a fastener for performing the above fastening. See also FIG.
Reference numeral 97 denotes a notch formed in the packing C22e to avoid the contact piece 58e of the current-carrying member C23e. With such a structure, when the substrate D is loaded,
The lower surface of the supporting region 4 of the substrate D first contacts the upper surface of the packing C22e, and the substrate D is further pushed down toward the supporting member 46e, whereby the packing C22e is compressed and the lower surface of the current-carrying portion 5 is the upper surface of the contact piece 58e. To contact. Therefore, in the loaded state, the packing C22 is provided between the lower surface of the mask 6 covering the supporting area 4 of the substrate D and the upper surface of the supporting member 46e.
The e is closely attached to prevent the plating solution from soaking into the current-carrying portion 5 of the substrate D. Also, the energizing part 5 and the contact piece 58e
By contacting with the base portion 43e of the ring body C21e, it becomes possible to energize from the conducting portion 5 through the conducting member C23e. In addition, for the parts which are functionally the same as or equivalent to those in the previous figure and are considered to be redundant, the same reference numerals as those in the previous figure are appended with the letter e, and the redundant description is omitted.

【0026】[0026]

【発明の効果】以上のように本願発明にあっては、メッ
キ用領域3に微小物形成用の多数のパターン7が形成さ
れた基板Dを用いそのメッキ用領域3に対してメッキを
行うことにより、上記多数のパターン7の各々に対して
一斉にメッキ膜を成膜させて、多数の微小物を能率良く
形成できる効果がある。しかもその場合、多数のパター
ン7に対する電流密度を予定通りにできるので、メッキ
時間を引き延ばすことなく所定の時間でもって所定の厚
みの微小物を得るようにできる効果がある。更に上記の
場合、基板の周辺近くの部分のパターン7に対しても予
定通りの電流密度でもってメッキを行うことができるの
で、上記メッキ用領域3の全体において、予定通りの均
一な厚みの微小物を得ることのできる効果がある。
As described above, according to the present invention, the plating is performed on the plating area 3 by using the substrate D in which the numerous patterns 7 for forming minute objects are formed in the plating area 3. As a result, a plating film is simultaneously formed on each of the large number of patterns 7 to effectively form a large number of minute objects. In addition, in that case, the current density for a large number of patterns 7 can be made as planned, so that there is an effect that it is possible to obtain a minute object having a predetermined thickness within a predetermined time without extending the plating time. Further, in the above case, the pattern 7 in the vicinity of the periphery of the substrate can be plated with the current density as planned, so that the entire plating region 3 has a predetermined uniform thickness. There is an effect that you can get things.

【図面の簡単な説明】[Brief description of drawings]

【図1】メッキ装置の模式図。FIG. 1 is a schematic diagram of a plating apparatus.

【図2】メッキ槽とホルダー及び基板との関係を示す一
部破断正面図。
FIG. 2 is a partially cutaway front view showing a relationship between a plating tank, a holder and a substrate.

【図3】(A)は電極体を設けた部分におけるホルダー
と基板の関係を示す縦断面図、、(B)は(A)とは対
称位置における同様の関係を示す縦断面図。
3A is a vertical cross-sectional view showing a relationship between a holder and a substrate in a portion where an electrode body is provided, and FIG. 3B is a vertical cross-sectional view showing a similar relationship to that of FIG.

【図4】カソードリングの平面図。FIG. 4 is a plan view of the cathode ring.

【図5】図4におけるV−V線位置の断面図。5 is a cross-sectional view taken along the line VV in FIG.

【図6】図4におけるVI−VI線位置の断面図。6 is a sectional view taken along the line VI-VI in FIG.

【図7】リング本体とパッキンと通電部材と基板との関
係を示す一部破断斜視図。
FIG. 7 is a partially cutaway perspective view showing the relationship between the ring body, the packing, the conducting member and the substrate.

【図8】通電部材の異なる実施例を示す縦断面図。FIG. 8 is a vertical cross-sectional view showing another embodiment of the current-carrying member.

【図9】リング本体と通電部材との関係を、図8の右方
から見た状態で示す図。
9 is a diagram showing the relationship between the ring body and the current-carrying member as viewed from the right side of FIG.

【図10】パッキンと通電部材の接触片との関係を示す
平面図。
FIG. 10 is a plan view showing the relationship between the packing and the contact piece of the current-carrying member.

【図11】(A)は基板の斜視図(部分図)、(B)は
(A)における一つのパターンの拡大図。
11A is a perspective view (partial view) of the substrate, and FIG. 11B is an enlarged view of one pattern in FIG.

【図12】従来のメッキ装置を略示する縦断面図。FIG. 12 is a vertical sectional view schematically showing a conventional plating apparatus.

【図13】メッキ液の染み込みを説明する為の底面図。FIG. 13 is a bottom view for explaining the penetration of the plating solution.

【符号の説明】[Explanation of symbols]

A メッキ槽 C ホルダー D 基板 3 メッキ用領域 5 通電部 46 支持部材 48 開口部 C22 パッキン C23 通電部材 A plating tank C holder D substrate 3 plating area 5 energizing part 46 support member 48 opening C22 packing C23 energizing member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 メッキ液を貯留する為のメッキ槽と、上
記メッキ槽内に備えさせたメッキ用の陽極と、上記メッ
キ槽内においてメッキ用の基板を保持する為のホルダー
とを有し、上記ホルダーは基板における導電面の中央部
のメッキ用領域をメッキ液に露出させる為の開口部を備
えておって、上記開口部に露出するメッキ用領域を、上
記メッキ槽内に貯留するメッキ液中に浸漬させて、上記
陽極と上記基板の導電面との間にメッキ用の電流を通電
することにより、上記メッキ用領域にメッキするように
しているメッキ装置において、上記ホルダーにおける上
記開口部の周囲の支持部材には、該支持部材と上記基板
における導電面の周辺の支持用領域との間を水密的にシ
ールして、導電面の周縁にある通電部に向けてメッキ液
が染み込むことを阻止する為の環状のパッキンを備える
と共に、上記基板の通電部との電気的接続を行う為の通
電部材を備えたことを特徴とするメッキ装置。
1. A plating tank for storing a plating solution, a plating anode provided in the plating tank, and a holder for holding a plating substrate in the plating tank. The holder has an opening for exposing the plating area at the center of the conductive surface of the substrate to the plating solution, and the plating area exposed in the opening is stored in the plating bath. In the plating apparatus, which is soaked in the inside of the holder, the plating area is plated by passing a current for plating between the anode and the conductive surface of the substrate. The surrounding support member is water-tightly sealed between the support member and the supporting region around the conductive surface of the substrate, and the plating solution is impregnated toward the current-carrying portion at the periphery of the conductive surface. Hindrance A plating apparatus comprising an annular packing for stopping and an energizing member for electrically connecting to an energizing portion of the substrate.
【請求項2】 上記通電部材を上記パッキンよりも外周
側に設けたことを特徴とする請求項1記載のメッキ装
置。
2. The plating apparatus according to claim 1, wherein the current-carrying member is provided on the outer peripheral side of the packing.
JP31548694A 1994-11-24 1994-11-24 Plating device Pending JPH08144094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31548694A JPH08144094A (en) 1994-11-24 1994-11-24 Plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31548694A JPH08144094A (en) 1994-11-24 1994-11-24 Plating device

Publications (1)

Publication Number Publication Date
JPH08144094A true JPH08144094A (en) 1996-06-04

Family

ID=18065953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31548694A Pending JPH08144094A (en) 1994-11-24 1994-11-24 Plating device

Country Status (1)

Country Link
JP (1) JPH08144094A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100847341B1 (en) * 2006-11-03 2008-07-21 고민실 Electric current jig of hanger for electroplating system
JP2011089164A (en) * 2009-10-22 2011-05-06 Omori Hanger Kogyo Kk Substrate holder for plating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100847341B1 (en) * 2006-11-03 2008-07-21 고민실 Electric current jig of hanger for electroplating system
JP2011089164A (en) * 2009-10-22 2011-05-06 Omori Hanger Kogyo Kk Substrate holder for plating

Similar Documents

Publication Publication Date Title
KR102056050B1 (en) Substrate plating jig
US6887113B1 (en) Contact element for use in electroplating
US6176985B1 (en) Laminated electroplating rack and connection system for optimized plating
JPH08144094A (en) Plating device
JP3257668B2 (en) Electrode assembly, cathode device and plating device
CN112981505A (en) Substrate support
JPH11204459A (en) Plating tool for semiconductor wafer
JP4730489B2 (en) Board holder with shielding plate
JPS5985886A (en) Selective plating method
JP3847434B2 (en) Semiconductor wafer plating jig
JP3328812B2 (en) Cathode and anode cartridges for electroplating testers
JPH05222590A (en) Plating jig for semiconductor wafer
JP3620531B2 (en) Electronic component, plating jig, and plating method using the same
JP2017137523A (en) Semiconductor wafer
JPH07211724A (en) Plating device and method and substrate to be plated
JP2000199099A (en) Jig for electroplating printed board
JP4164435B2 (en) Electronic parts plating jig and electrolytic plating equipment
JPH0570986A (en) Electrolytic copper plating method and electrolytic copper plating device
KR101153275B1 (en) Plating jig for electronic parts and electrolysis plating apparatus
JP2020084248A (en) Method of having substrate holder hold substrate
KR100293238B1 (en) rack for use in substrate plating device
JPH0813198A (en) Electrode for contact conduction and apparatus for producing semiconductor using the same
US20210102306A1 (en) Holding apparatus
JPH0379783A (en) Solid-polymer electrolyte membrane device
JPH0586498A (en) Plating device