JPH08141765A - Laser beam machining method - Google Patents
Laser beam machining methodInfo
- Publication number
- JPH08141765A JPH08141765A JP6306996A JP30699694A JPH08141765A JP H08141765 A JPH08141765 A JP H08141765A JP 6306996 A JP6306996 A JP 6306996A JP 30699694 A JP30699694 A JP 30699694A JP H08141765 A JPH08141765 A JP H08141765A
- Authority
- JP
- Japan
- Prior art keywords
- work
- laser
- laser beam
- hole
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子材料基板等に用い
るガラス製の基板に対し、微細な孔明け加工を行なうた
めのレーザ加工方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing method for finely punching a glass substrate used as an electronic material substrate or the like.
【０００２】[0002]
【従来の技術】従来、透明ガラスからなる基板に微細な
孔明け加工を行なうレーザ加工方法としては、透明ガラ
スを透過するＹＡＧレーザ光を用いることが困難なた
め、透明ガラス製の基板を高温に加熱するかあるいは室
温でＣＯ2 レーザ光やエキシマレーザ光を照射するレー
ザ加工方法が採用されている。2. Description of the Related Art Conventionally, it has been difficult to use a YAG laser beam that passes through transparent glass as a laser processing method for finely punching a substrate made of transparent glass. A laser processing method of heating or irradiating CO 2 laser light or excimer laser light at room temperature is adopted.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来の技
術は、いずれも孔明け加工によって除去された透明ガラ
スのかすつまりドロスが発生する上、透明ガラス製の基
板を高温に加熱して孔明け加工を行なう方法では、別途
加熱手段を必要とするとともに加熱時間を費やすために
生産性が低く、一方、室温で孔明け加工を行なう方法で
は、孔明け加工部に微細な亀裂が発生するという問題点
があった。However, in all of the above-mentioned conventional techniques, dross or dross of the transparent glass removed by the perforating process is generated, and the transparent glass substrate is heated to a high temperature for perforating. The method of processing requires a separate heating means and consumes heating time, resulting in low productivity. On the other hand, the method of performing drilling at room temperature causes minute cracks in the drilled portion. There was a point.
【０００４】本発明は、上記従来の技術の有する問題点
に鑑みてなされたものであって、ガラス製の基板に孔明
け加工を行なった際に発生する微細な亀裂およびドロス
を除去できるレーザ加工方法を実現することを目的とす
るものである。The present invention has been made in view of the above problems of the prior art, and laser processing capable of removing fine cracks and dross generated when a glass substrate is perforated. The purpose is to realize the method.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明のレーザ加工方法は、ガラス製の基板にレジ
スト剤を塗布してレジスト膜を形成したのち、レーザ光
を照射して孔明け加工を行ない、ついで、孔明け加工さ
れた前記基板を所定の濃度のフッ酸溶液中に浸して孔明
け加工部に発生した微細な亀裂およびドロスを除去する
ことを特徴とするものである。In order to achieve the above object, the laser processing method of the present invention is such that a glass substrate is coated with a resist agent to form a resist film, and then a laser beam is irradiated to form a hole. It is characterized by performing processing, and then immersing the perforated substrate in a hydrofluoric acid solution having a predetermined concentration to remove fine cracks and dross generated in the perforated portion.
【０００６】[0006]
【作用】本発明のレーザ加工方法において、レーザ光を
照射して孔明け加工を行なった部位以外の部位は、レジ
スト膜で保護されているため、レーザ光を照射して孔明
け加工を行なったのちフッ酸溶液中に浸した際に、孔明
け加工部のみがエッチングされる。その結果、孔明け加
工部に発生した微細な亀裂やドロスが除去される。In the laser processing method of the present invention, since the portions other than the portions that have been laser-irradiated for the perforation processing are protected by the resist film, the laser beam is used for the perforation processing. Then, when it is dipped in a hydrofluoric acid solution, only the drilled portion is etched. As a result, fine cracks and dross generated in the punched portion are removed.
【０００７】[0007]
【実施例】本発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described with reference to the drawings.
【０００８】（第１実施例）図１は第１実施例のレーザ
加工方法に用いるレーザ加工装置の説明図であって、レ
ーザ加工装置Ｅ1 は、ＣＯ2 レーザ装置１によって発生
されたレーザ光であるＣＯ2 レーザ光Ｌ1 をミラー２で
反射させ、ミラー２で反射されたＣＯ2 レーザ光Ｌ1 を
加工レンズ３によって集光してワークＷに照射するとと
もに、加工ノズル４よりアシストガス５をワークＷへ供
給できるように構成されている。(First Embodiment) FIG. 1 is an explanatory view of a laser processing apparatus used in the laser processing method of the first embodiment. The laser processing apparatus E 1 is a laser beam generated by a CO 2 laser apparatus 1. The CO 2 laser light L 1 is reflected by the mirror 2, the CO 2 laser light L 1 reflected by the mirror 2 is condensed by the processing lens 3 to be applied to the work W, and the assist gas 5 is emitted from the processing nozzle 4. Can be supplied to the work W.
【０００９】次に、本実施例のレーザ加工方法の工程に
ついて説明する。Next, the steps of the laser processing method of this embodiment will be described.
【００１０】（１）ガラス製の基板６にレジスト剤を塗
布してレジスト膜７を形成したワークＷを作製する。(1) A resist W is applied to a glass substrate 6 to prepare a work W having a resist film 7 formed thereon.
【００１１】（２）上記（１）の工程ののち、ワークＷ
に対し、ＣＯ2 レーザ装置１によって発生されたＣＯ2
レーザ光Ｌ1 をミラー２で反射させて加工レンズ３へ導
き、加工レンズ３によって集光させてワークＷのレジス
ト膜７の孔明け加工すべき部位に照射するとともに、加
工ノズル４よりアシストガス５を供給してワークＷを貫
通する孔８を形成する。(2) After the step (1), the work W
To, CO 2 generated by the CO 2 laser device 1
The laser beam L 1 is reflected by the mirror 2 and guided to the processing lens 3, and is condensed by the processing lens 3 to irradiate a portion of the work film W where the resist film 7 is to be perforated and the assist gas 5 is emitted from the processing nozzle 4. To form a hole 8 penetrating the work W.
【００１２】本工程において、ワークＷの孔明け加工部
である孔８の内面には微細な亀裂が発生するとともにド
ロスが発生する。In this step, fine cracks and dross are generated on the inner surface of the hole 8 which is a hole-punched portion of the work W.
【００１３】（３）上記（２）の工程ののち、孔明け加
工されたワークＷを、図３に示すように、吊り下げ具２
２で保持して処理槽２０に貯留された所定の濃度のフッ
酸溶液２１中に浸し、ワークＷの孔明け加工部のエッチ
ングを行なう。(3) After the step (2), the workpiece W that has been subjected to the punching process is suspended by the hanging tool 2 as shown in FIG.
It is held in 2 and is immersed in the hydrofluoric acid solution 21 having a predetermined concentration stored in the processing tank 20 to etch the hole-processed portion of the work W.
【００１４】本実施例の効果を確認するための実験を行
なったので、その結果を具体例１に示す。An experiment was conducted to confirm the effect of the present embodiment, and the result is shown in a concrete example 1.
【００１５】（具体例１） （１）透明ガラス（青板ガラスＴ＝０．５）にフッ酸レ
ジスト剤（東京応化製ＯＦＰＲ８００）を塗布すること
によって膜厚１．２μ〜１．６μのレジスト膜を形成し
たワークを作製する。(Specific Example 1) (1) A resist film having a film thickness of 1.2 μ to 1.6 μ by applying a hydrofluoric acid resist agent (OFPR800 manufactured by Tokyo Ohka Kabushiki Kaisha) to transparent glass (blue plate glass T = 0.5). A work having the above is formed.
【００１６】（２）上記（１）の工程で得たワークに対
し、出力４４０ＷのＣＯ2 レーザ装置によって発生した
パルスオンタイム１ｍｓ、パルスオフタイム１１５ｍｓ
のＣＯ2 レーザ光を７パルス照射するとともに、アシス
トガスを加工ノズルよりワークの孔明け加工部へ供給
し、ワークＷを貫通する孔を形成する。使用した加工レ
ンズの外径は５ｉｎ、アシストガスはガス圧０．３〜
０．８ｋｇ／ｃｍ2 の酸素ガスを用いた。(2) For the work obtained in the above step (1), a pulse-on time of 1 ms and a pulse-off time of 115 ms generated by a CO 2 laser device having an output of 440 W.
7 pulses of CO 2 laser light are supplied, and the assist gas is supplied from the processing nozzle to the hole punching portion of the workpiece to form a hole penetrating the workpiece W. The outer diameter of the processed lens used is 5 inches, and the assist gas has a gas pressure of 0.3-
Oxygen gas of 0.8 kg / cm 2 was used.
【００１７】（３）上記（２）の工程で得た孔を形成し
たワークをフッ酸５％の溶液中に１０ｓ浸したのち、引
き上げたところワークの孔明け加工部である孔の内面の
微細な亀裂およびドロスはほぼ完全に取り除かれてい
た。(3) The work having the holes obtained in the above step (2) is dipped in a solution of 5% hydrofluoric acid for 10 s, and then lifted up. The cracks and dross were almost completely removed.
【００１８】（第２実施例）図２は、第２実施例のレー
ザ加工方法に用いるレーザ加工装置の説明図であって、
レーザ加工装置Ｅ2 は、エキシマレーザ装置１１によっ
て発生されたエキシマレーザ光Ｌ2 をミラー１２で反射
させ、ミラー１２で反射されたエキシマレーザ光Ｌ2 を
加工レンズ１３によって集光してワークＷに照射するも
のであって、エキシマレーザ装置１１とミラー１２の間
にはマスク１４が介在されたものである。(Second Embodiment) FIG. 2 is an explanatory view of a laser processing apparatus used in the laser processing method of the second embodiment.
The laser processing device E 2 reflects the excimer laser light L 2 generated by the excimer laser device 11 by the mirror 12, and collects the excimer laser light L 2 reflected by the mirror 12 by the processing lens 13 onto the work W. Irradiation is performed, and a mask 14 is interposed between the excimer laser device 11 and the mirror 12.
【００１９】次に、本実施例の工程について説明する。Next, the process of this embodiment will be described.
【００２０】（１）ガラス製の基板１６にレジスト膜１
７を施してワークＷを作製する。(1) Resist film 1 on glass substrate 16
7 is performed to manufacture the work W.
【００２１】（２）上記（１）の工程で得たワークＷに
対し、エキシマレーザ装置１１によって発生されたエキ
シマレーザ光Ｌ2 を、マスク１４を通したのちミラー１
２で反射させて加工レンズ１３へ導き、該加工レンズ１
３で集光してワークＷの孔明け加工すべき部位に照射す
ることによって、ワークＷを貫通する孔１８を形成す
る。(2) The excimer laser beam L 2 generated by the excimer laser device 11 is passed through the mask 14 and then the mirror 1 is applied to the work W obtained in the step (1).
It is reflected by 2 and guided to the processed lens 13, and the processed lens 1
A hole 18 penetrating the work W is formed by irradiating a portion of the work W to be perforated by condensing light at 3.
【００２２】（３）上記（２）の工程ののち、孔１８が
形成されたワークＷを、図３に示すフッ酸溶液２１に浸
すことにより、第１実施例と同様に孔明け加工部に発生
した微細な亀裂およびドロスを除去した。(3) After the step (2) above, the work W having the holes 18 formed therein is dipped in the hydrofluoric acid solution 21 shown in FIG. 3 to form a drilled portion in the same manner as in the first embodiment. The generated fine cracks and dross were removed.
【００２３】本実施例についても効果を確認するための
実験を行なったので、その結果を具体例２に示す。An experiment was carried out to confirm the effect of this example as well, and the result is shown in Example 2.
【００２４】（具体例２）上記具体例１における工程
（２）のかわりに、エキシマレーザ装置により発生した
３Ｊ／ｃｍ2 、１００Ｈｚのエキシマレーザ光を１０ｓ
間大気中で照射した以外は具体例１と同様にワークの孔
明け加工を行なったところ、具体例１と同様の結果が得
られた。(Specific Example 2) Instead of the step (2) in the above specific example 1, excimer laser light of 3 J / cm 2 and 100 Hz generated by an excimer laser device was used for 10 s.
When the work was punched in the same manner as in Example 1 except that the irradiation was performed in the atmosphere, the same results as in Example 1 were obtained.
【００２５】[0025]
【発明の効果】本発明は、上述のとおり構成されている
ので、次に記載するような効果を奏する。Since the present invention is configured as described above, it has the following effects.
【００２６】孔明け加工部に発生した微細な亀裂および
ドロスを完全に取り除くことができるため、高精度の孔
を形成することができるとともに、室温で孔明け加工が
できるので生産性が向上する。Since fine cracks and dross generated in the hole-punched portion can be completely removed, it is possible to form holes with high precision and also to carry out hole-working at room temperature, which improves productivity.
【図１】本発明の第１実施例のレーザ加工方法に用いる
レーザ加工装置の説明図である。FIG. 1 is an explanatory diagram of a laser processing apparatus used in a laser processing method according to a first embodiment of the present invention.
【図２】本発明の第２実施例のレーザ加工方法に用いる
レーザ加工装置の説明図である。FIG. 2 is an explanatory diagram of a laser processing apparatus used in a laser processing method according to a second embodiment of the present invention.
【図３】本発明のレーザ加工方法における一工程を示
し、孔明け加工を行なったワークをフッ酸溶液に浸した
状態の説明図である。FIG. 3 is an explanatory view showing one step in the laser processing method of the present invention and showing a state in which a hole-worked workpiece is immersed in a hydrofluoric acid solution.
１ ＣＯ2 レーザ装置 ２，１２ ミラー ３，１３ 加工レンズ ４ 加工ノズル ５ アシストガス ６，１６ 基板 ７，１７ レジスト膜 ８，１８ 孔 １１ エキシマレーザ装置 １４ マスク ２０ 処理槽 ２１ フッ酸溶液 ２２ 吊り下げ具1 CO 2 Laser Device 2, 12 Mirror 3, 13 Processing Lens 4 Processing Nozzle 5 Assist Gas 6, 16 Substrate 7, 17 Resist Film 8, 18 Hole 11 Excimer Laser Device 14 Mask 20 Processing Tank 21 Hydrofluoric Acid Solution 22 Hanging Tool
Claims (3)
レジスト膜を形成したのち、レーザ光を照射して孔明け
加工を行ない、ついで、孔明け加工された前記基板を所
定の濃度のフッ酸溶液中に浸して孔明け加工部に発生し
た微細な亀裂およびドロスを除去することを特徴とする
レーザ加工方法。1. A glass substrate is coated with a resist agent to form a resist film, which is then irradiated with laser light to carry out perforation processing, and then the perforated processing is performed on the substrate with a predetermined concentration. A laser processing method, which comprises immersing in an acid solution to remove fine cracks and dross generated in a hole-processed portion.
特徴とする請求項１記載のレーザ加工方法。2. The laser processing method according to claim 1, wherein the laser light is CO 2 laser light.
を特徴とする請求項１記載のレーザ加工方法。3. The laser processing method according to claim 1, wherein the laser light is excimer laser light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6306996A JPH08141765A (en) | 1994-11-16 | 1994-11-16 | Laser beam machining method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6306996A JPH08141765A (en) | 1994-11-16 | 1994-11-16 | Laser beam machining method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08141765A true JPH08141765A (en) | 1996-06-04 |
Family
ID=17963766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6306996A Pending JPH08141765A (en) | 1994-11-16 | 1994-11-16 | Laser beam machining method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08141765A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107181A (en) * | 1997-09-08 | 2000-08-22 | Fujitsu Limited | Method of forming bumps and template used for forming bumps |
| US6320158B1 (en) | 1998-01-29 | 2001-11-20 | Fujitsu Limited | Method and apparatus of fabricating perforated plate |
| KR100710854B1 (en) * | 2005-10-19 | 2007-04-23 | (주)하드램 | A glass drilling apparatus and a method for drilling glass |
| US7902481B2 (en) * | 2004-03-31 | 2011-03-08 | Citizen Holdings Co., Ltd | Method of manufacturing sealed electronic component and sealed electronic component |
| JP2016056046A (en) * | 2014-09-08 | 2016-04-21 | 旭硝子株式会社 | Open hole formation method |
| CN108145315A (en) * | 2018-01-09 | 2018-06-12 | 吉林大学 | The method and its application of gray scale processing are carried out to hard material using femtosecond laser pulse |
| US10077206B2 (en) * | 2015-06-10 | 2018-09-18 | Corning Incorporated | Methods of etching glass substrates and glass substrates |
| CN113646125A (en) * | 2019-03-25 | 2021-11-12 | 康宁股份有限公司 | Method of forming through-holes in glass |
| US11772191B2 (en) | 2019-10-24 | 2023-10-03 | Samsung Display Co., Ltd. | Substrate processing apparatus and method |
-
1994
- 1994-11-16 JP JP6306996A patent/JPH08141765A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107181A (en) * | 1997-09-08 | 2000-08-22 | Fujitsu Limited | Method of forming bumps and template used for forming bumps |
| US6432806B1 (en) | 1997-09-08 | 2002-08-13 | Fujitsu Limited | Method of forming bumps and template used for forming bumps |
| US6320158B1 (en) | 1998-01-29 | 2001-11-20 | Fujitsu Limited | Method and apparatus of fabricating perforated plate |
| US7902481B2 (en) * | 2004-03-31 | 2011-03-08 | Citizen Holdings Co., Ltd | Method of manufacturing sealed electronic component and sealed electronic component |
| KR100710854B1 (en) * | 2005-10-19 | 2007-04-23 | (주)하드램 | A glass drilling apparatus and a method for drilling glass |
| JP2016056046A (en) * | 2014-09-08 | 2016-04-21 | 旭硝子株式会社 | Open hole formation method |
| US10077206B2 (en) * | 2015-06-10 | 2018-09-18 | Corning Incorporated | Methods of etching glass substrates and glass substrates |
| CN108145315A (en) * | 2018-01-09 | 2018-06-12 | 吉林大学 | The method and its application of gray scale processing are carried out to hard material using femtosecond laser pulse |
| CN108145315B (en) * | 2018-01-09 | 2019-11-08 | 吉林大学 | The method and its application of gray scale processing are carried out to hard material using femtosecond laser pulse |
| CN113646125A (en) * | 2019-03-25 | 2021-11-12 | 康宁股份有限公司 | Method of forming through-holes in glass |
| US11772191B2 (en) | 2019-10-24 | 2023-10-03 | Samsung Display Co., Ltd. | Substrate processing apparatus and method |
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