JPH08139008A - Wafer temperature control device and semiconductor manufacturing apparatus using the same - Google Patents

Abstract

PURPOSE: To improve uniformity of a resist coating film at the time of resist coating and uniformity of resist line width after development, by enabling the control of wafer temperature in a resist coating process and a developing process. CONSTITUTION: The temperature of a wafer 11 is controlled at a specified value with a heater 31 for controlling wafer temperature which is arranged at the back of the wafer 11 and a heater temperature control device 32 which controls the temperature of the heater 31 for controlling wafer temperature. A controller 40 so controls the heater temperature control device 32, a cooling water temperature control device 20, a water temperature control device 27 for controlling chemical liquid temperature, and an air conditioner 37 that the temperatures of the wager 11, a wafer chuck 12, chemical liquid dripped from a nozzle 24 and the atmosphere in a wafer cup 21 are made an equal specified value.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer temperature adjusting device for adjusting the temperature of a semiconductor wafer (hereinafter simply referred to as "wafer") in at least one of resist coating and developing in a semiconductor manufacturing process, and a wafer temperature adjusting device using the same. The present invention relates to a semiconductor manufacturing device.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, a coating and developing unit is used in a process of applying a resist for forming a pattern on a wafer and a process of developing after exposure in order to maintain the accuracy of the pattern on the wafer. The temperature and humidity of the atmosphere and the temperature of the resist and the developer were controlled.

[0003]

However, it is difficult to control the actual temperature of the wafer only by adjusting the temperature of the atmosphere and the temperature of the resist and the developing solution, and the temperature and atmosphere of the resist and the developing solution are controlled. There was a problem that it was difficult to balance with the temperature. The imbalance between the temperature of the wafer and the temperature of the resist and the developer and the temperature of the atmosphere causes deterioration of the uniformity of the resist coating film and the uniformity of the resist line width after development. In particular,
In the resist coating step, when the wafer temperature is higher than the optimum temperature, the resist coating film becomes thin, and when the wafer temperature is lower than the optimum temperature, the resist coating film becomes thicker. In any case, the thickness of the resist coating film may be uneven. Further, if the resist coating film becomes thick, the resist line width after development becomes narrow.

The present invention has been made in view of the above problems, and an object thereof is to make it possible to adjust the temperature of a wafer in a resist coating process and a developing process in a semiconductor manufacturing process so that a resist coating film at the time of resist coating. It is an object of the present invention to provide a wafer temperature adjusting device and a semiconductor manufacturing apparatus using the same, which can improve the uniformity of the resist pattern width and the uniformity of the resist line width after development.

[0005]

According to a first aspect of the present invention, there is provided a wafer temperature control apparatus, wherein in a semiconductor manufacturing apparatus for performing at least one of resist coating and developing in a semiconductor manufacturing step, a semiconductor wafer is sucked and held from a back surface and rotated. And a heat source part arranged below the wafer chuck so as to face the back surface of the semiconductor wafer held by the wafer chuck and generate or absorb heat, and a heat source part for controlling the temperature of the heat source part. And a temperature control means.

A semiconductor manufacturing apparatus according to a second aspect is a semiconductor manufacturing apparatus that performs at least one of resist coating and development in a semiconductor manufacturing process, and is a wafer chuck for sucking and holding a semiconductor wafer from the back surface and rotating it. A motor for rotating the wafer chuck, a nozzle for dropping a chemical liquid of at least one of a resist and a developing solution onto the upper surface of the semiconductor wafer held by the wafer chuck, and a semiconductor held by the wafer chuck. A wafer cup that surrounds the wafer is provided around the wafer chuck to prevent chemicals from splashing, and a wafer cup is placed below the wafer chuck to face the back surface of the semiconductor wafer held by the wafer chuck. Or adjust the temperature of the heat source that absorbs heat and this heat source. Heat source temperature adjusting means, wafer chuck temperature adjusting means for adjusting the temperature of the wafer chuck, chemical solution temperature adjusting means for adjusting the temperature of the chemical solution dropped by the nozzle, and atmosphere for adjusting the temperature of the atmosphere inside the wafer cup. The heat source temperature adjusting means, the wafer chuck temperature adjusting means, the chemical temperature adjusting means and the atmosphere temperature adjusting means are controlled so that the temperature adjusting means and the semiconductor wafer, the wafer chuck, the chemical solution and the atmosphere have the same predetermined temperature. And a control means for controlling the operation.

[0007]

According to another aspect of the present invention, there is provided a wafer temperature adjusting apparatus, wherein the semiconductor wafer held by the wafer chuck has a heat source portion arranged to face the back surface of the semiconductor wafer and a heat source portion temperature adjusting means for adjusting the temperature of the heat source portion. The temperature is controlled by means.

According to another aspect of the semiconductor manufacturing apparatus of the present invention, the semiconductor wafer is held and rotated by the wafer chuck in the wafer cup, and the chemical solution is dropped from the nozzle onto the upper surface of the semiconductor wafer to perform resist coating and development. At least one process is performed. At this time, the control means controls the heat source temperature adjusting means, the wafer chuck temperature adjusting means, the chemical solution temperature adjusting means and the atmosphere temperature adjusting means so that the semiconductor wafer, the wafer chuck, the chemical solution and the atmosphere have the same temperature. To be adjusted.

[0009]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is an explanatory view showing the structure of a semiconductor manufacturing apparatus including a wafer temperature adjusting apparatus according to an embodiment of the present invention. This semiconductor manufacturing apparatus is an apparatus (coater / developer) that performs at least one of resist coating and development in the semiconductor manufacturing process. Note that this semiconductor manufacturing apparatus may be one in which both the resist coating and development processes in the semiconductor manufacturing process are performed by one device,
It is also possible to perform only one of the steps.

As shown in FIG. 1, the semiconductor manufacturing apparatus of this embodiment includes a wafer chuck 12 for sucking and holding a wafer 11 from the back surface and rotating the wafer 11. The wafer chuck 12 is connected to a motor 14 via a support shaft 13. The motor 14 is fixed to the apparatus body via a motor flange 15. Although not shown, a plurality of suction grooves are formed on the upper surface of the wafer chuck 12, and the suction holes 16 are formed so as to penetrate the support shaft 13.
It is connected to the suction device 17 via. A cooling water passage 18 is formed in the motor flange 15, and the cooling water passage 18 circulates the cooling water passing through the cooling water passage 18 and a cooling water temperature adjusting device for adjusting the temperature of the cooling water. Connected to 20. The cooling water temperature adjusting device 20 has a heating / cooling device for heating or cooling the cooling water and a temperature sensor for detecting the temperature of the cooling water.
The temperature of the cooling water detected by the temperature sensor can be adjusted to a predetermined temperature. The cooling water passage 18, the cooling water circulating device 19, and the cooling water temperature adjusting device 20 constitute a wafer chuck temperature adjusting means for adjusting the temperature of the wafer chuck 12.

The semiconductor manufacturing apparatus further includes a wafer cup 21 for preventing chemical liquid scattering, which is provided around the wafer chuck 12 so as to surround the wafer 11 held by the wafer chuck 12. This wafer cup 21 is connected to a cylinder 22,
It is designed to move vertically.

The semiconductor manufacturing apparatus further includes a nozzle 24 for dropping a chemical solution of at least one of a resist and a developing solution on the upper surface of the wafer 11 held by the wafer chuck 12. The nozzle 24 has a double structure in which a chemical liquid temperature adjusting water passage through which the chemical liquid temperature adjusting water for adjusting the temperature of the chemical liquid passes is formed around the inside of the chemical liquid passage. The chemical liquid passage of the nozzle 24 is connected to the chemical liquid supply device 25, and the chemical liquid temperature adjusting water passage adjusts the temperature of the chemical liquid temperature adjusting water circulating device 26 for circulating the chemical liquid temperature adjusting water and the chemical liquid temperature adjusting water. It is connected to the water temperature adjusting device 27 for adjusting the temperature of the chemical liquid. The chemical liquid temperature control water temperature control device 27 has a heating / cooling device for heating or cooling the chemical liquid temperature control water and a temperature sensor for detecting the temperature of the chemical liquid temperature control water, and the chemical liquid temperature control water detected by the temperature sensor. The temperature of can be adjusted to a predetermined temperature. The chemical liquid temperature adjusting water passage in the nozzle 24, the chemical liquid temperature adjusting water circulating device 26, and the chemical liquid temperature adjusting water temperature adjusting device 27 constitute a chemical liquid temperature adjusting means for adjusting the temperature of the chemical liquid dropped by the nozzle 24.

The semiconductor manufacturing apparatus is further arranged below the wafer chuck 12 so as to face the back surface of the wafer 11 held by the wafer chuck 12, and serves as a heat source unit for heating the wafer 11. A wafer temperature adjusting heater 31 and a heater temperature adjusting device 32 for adjusting the temperature of the wafer temperature adjusting heater 31 are provided. A ceramic heater is used as the wafer temperature adjusting heater 31, for example. Further, the wafer temperature adjusting heater 31 is wound, for example, in a spiral shape and is housed in a case 33 arranged below the wafer chuck 12. The case 33 is arranged at a position where the distance between the upper surface of the case 33 and the back surface of the wafer 11 is, for example, about 2 to 3 mm. The heater temperature adjusting device 32 detects the temperature of the wafer temperature adjusting heater 31 by a temperature sensor provided near the wafer temperature adjusting heater 31 or by detecting the resistance value of the wafer temperature adjusting heater 31. The temperature of the wafer temperature adjusting heater 31 can be adjusted to a predetermined temperature by adjusting the power supplied to the wafer temperature adjusting heater 31.

The above components are housed in a housing 35. HEPA is on the upper surface of the housing 35.
A (High Efficiency Particulate Air) filter 36 is mounted. The semiconductor manufacturing apparatus further includes an air conditioner 37 that introduces outside air and discharges air whose temperature and humidity are adjusted, and this air conditioner 37.
A duct 38 for supplying the air whose temperature and humidity are adjusted to the upper surface of the HEPA filter 36. The air whose temperature and humidity have been adjusted by the air conditioner 37 and which has passed through the HEPA filter 36 serves as the downflow air 39 for adjusting the ambient temperature, and is used as the housing 3
It is designed to descend vertically within 5. Further, the air conditioner 37 constitutes an atmosphere temperature adjusting means for adjusting the temperature of the atmosphere inside the wafer cup 21.

The semiconductor manufacturing apparatus further includes a motor 14, a suction device 17, a cooling water circulation device 19, a cooling water temperature control device 20, a cylinder 22, a chemical liquid supply device 25, a chemical liquid temperature control water circulation device 26, and a chemical liquid temperature control water temperature. A controller 40 that controls the adjusting device 27, the heater temperature adjusting device 32, and the air conditioner 37 is provided. This controller 40
The heater temperature control device 32, the cooling water temperature control device 20, and the chemical liquid temperature control are controlled so that the temperatures of the wafer 11, the wafer chuck 12, the chemical liquid dropped from the nozzle 24, and the atmosphere in the wafer cup 21 are equal to each other. The water temperature controller 27 and the air conditioner 37 are controlled.

Next, the operation of the semiconductor manufacturing apparatus of this embodiment will be described.

At the time of resist coating and development on the wafer 11, the wafer 11 is transferred into the wafer cup 21 by a transfer device (not shown), placed on the wafer chuck 12, and driven on the wafer chuck 12 by driving the suction device 17. Is held by suction. Note that the transfer device is configured to grip the side portion of the wafer 11 and move in the horizontal direction. Therefore, the wafer cup 21 is
When 1 is transferred into the wafer cup 21, it is lowered,
The wafer 11 is lifted after being suction-held on the wafer chuck 12.

At the time of applying and developing the resist, the atmosphere inside the wafer cup 21 is adjusted to a desired temperature and humidity by the downflow air 39 for adjusting the atmosphere temperature. Further, the wafer chuck 21 is cooled by the cooling water passing through the cooling water passage 18 in the motor flange 15 and the temperature of the cooling water is adjusted by the cooling water temperature adjusting device 20 in order to avoid heat conduction from the motor 14. The temperature is adjusted to the desired temperature.

At the time of applying the resist, the resist is supplied from the chemical solution supply device 25 to the nozzle 24, and the resist is applied to the wafer 1.
1 onto the supporting shaft 13 by the motor 24.
Wafer chuck 12 is rotated through to rotate wafer 11 and spin coating is performed. Further, at the time of development, the developing solution is supplied from the chemical solution supply device 25 to the nozzle 24, the developing solution is dropped on the wafer 11, and the wafer 11 is rotated in the same manner as when the resist is applied, so that the developing solution is placed on the wafer 11. Pour liquid. At this time, the chemical liquid temperature adjusting water passing through the chemical liquid temperature adjusting water passage in the nozzle 24 is used as the chemical liquid temperature adjusting water temperature adjusting device 2
By adjusting the temperature with 7, the resist or the developing solution dropped from the nozzle 24 is adjusted to a desired temperature.

Further, while the wafer 11 is adsorbed and held on the wafer chuck 12, and the resist or the developing solution is applied or puddle on the wafer 11, the heater temperature adjusting device 3 is provided.
By adjusting the temperature of the wafer temperature adjusting heater 31 with 2, the wafer 11 is adjusted to a desired temperature.

The controller 40 controls the heater temperature adjusting device 32 and the cooling water temperature so that the temperatures of the wafer 11, the wafer chuck 12, the chemical liquid dropped from the nozzle 24, and the atmosphere in the wafer cup 21 become equal to each other. The controller 20, the chemical temperature adjusting water temperature controller 27, and the air conditioner 37 are controlled. Specifically, for example, 23-
Each temperature is adjusted within a range of 25 ° C with an accuracy of ± 0.1 to 0.3 ° C, preferably ± 0.1 ° C.

Since the actual temperature of the wafer 11 cannot be detected in the resist coating and developing process, the wafer 11 to which the temperature sensor is attached in advance is placed on the wafer chuck 12 and detected by the temperature sensor. The temperature of the wafer temperature adjusting heater 31 is obtained so that the temperature of the wafer 11 becomes a desired temperature, and the temperature of the wafer temperature adjusting heater 31 is adjusted so as to be the obtained temperature in the resist coating and developing process. Make adjustments.

As described above, according to this embodiment,
A wafer temperature adjusting heater 31 and a heater temperature adjusting device 32 for adjusting the temperature of the wafer are provided, and the controller 40 controls the wafer 11, the wafer chuck 12, the chemical liquid dropped from the nozzle 24, and the atmosphere in the wafer cup 21. Since the heater temperature adjusting device 32, the cooling water temperature adjusting device 20, the chemical liquid temperature adjusting water temperature adjusting device 27 and the air conditioner 37 are controlled so that the respective temperatures become equal to each other, the temperature of the wafer 11 is controlled. And the temperature of the wafer 11, the wafer chuck 12, the chemical liquid dropped from the nozzle 24, and the temperature of the atmosphere in the wafer cup 21 can be balanced, and the uniformity of the resist coating film at the time of resist coating and the resist after development can be improved. The uniformity of the line width can be improved. As a result, finer control of the pattern line width becomes possible, and the uniformity of the resist coating film and the uniformity of the resist line width after development can be maintained even when the diameter of the wafer is increased.

The present invention is not limited to the above embodiment,
For example, the means for adjusting the temperature of the wafer, the wafer chuck, the chemical solution, and the atmosphere are not limited to those shown in the embodiments. For example, as the heat source unit for adjusting the temperature of the wafer, both heat generation and heat absorption are possible, such as a thermoelectric element that uses the Peltier effect to generate heat and absorb heat, instead of the wafer temperature adjustment heater 31. You may use the thing.

[0026]

As described above, according to the wafer temperature adjusting apparatus of the first aspect, the temperature of the semiconductor wafer can be adjusted by the heat source section and the heat source section temperature adjusting means in the resist coating step and the developing step. Therefore, by adjusting the temperature of the semiconductor wafer to an optimum temperature, it is possible to improve the uniformity of the resist coating film during resist coating and the uniformity of resist line width after development.

According to the semiconductor manufacturing apparatus of the second aspect, the temperature of the semiconductor wafer can be adjusted by the heat source section and the heat source section temperature adjusting means in the resist coating step and the developing step. The heat source temperature adjusting means, the wafer chuck temperature adjusting means by the control means,
Since the temperature of the semiconductor wafer, the wafer chuck, the temperature of the chemical solution and the atmosphere are adjusted to be equal to each other by controlling the chemical liquid temperature adjusting means and the atmosphere temperature adjusting means, the semiconductor wafer temperature and the wafer chuck are adjusted. In addition, it is possible to balance each temperature of the chemical solution and the atmosphere, and it is possible to improve the uniformity of the resist coating film at the time of resist coating and the uniformity of the resist line width after development.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a configuration of a semiconductor manufacturing apparatus including a wafer temperature adjusting apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 11 Semiconductor Wafer 12 Wafer Chuck 13 Support Shaft 14 Motor 15 Motor Flange 17 Suction Device 18 Cooling Water Passage 19 Cooling Water Circulation Device 20 Cooling Water Temperature Control Device 21 Wafer Cup 24 Nozzle 25 Chemical Liquid Supply Device 26 Chemical Liquid Temperature Control Water Circulation Device 27 Chemical Liquid Temperature Conditioning water temperature control device 31 Wafer temperature control heater 32 Heater temperature control device 37 Air conditioner

Claims (2)

[Claims] 1. A semiconductor manufacturing apparatus for performing at least one of resist coating and development in a semiconductor manufacturing process, wherein the back surface of the semiconductor wafer is held by a wafer chuck for sucking and holding the semiconductor wafer from the back surface and rotating the wafer. And a heat source portion temperature control means for controlling the temperature of the heat source portion, the heat source portion being disposed under the wafer chuck so as to face the heat source and generating or absorbing heat. Adjustment device. 2. A semiconductor manufacturing apparatus for performing at least one of resist coating and developing in a semiconductor manufacturing process, which comprises a wafer chuck for sucking and holding a semiconductor wafer from the back surface for rotation, and rotating the wafer chuck. A motor, a nozzle for dropping a chemical liquid of at least one of a resist and a developing solution on the upper surface of the semiconductor wafer held by the wafer chuck, and a nozzle for enclosing the semiconductor wafer held by the wafer chuck. A wafer cup for preventing chemical liquid scattering provided around the wafer chuck, and a wafer cup that is disposed below the wafer chuck so as to face the back surface of the semiconductor wafer held by the wafer chuck. The heat source to perform and the heat source that controls the temperature of this heat source Part temperature adjusting means, wafer chuck temperature adjusting means for adjusting the temperature of the wafer chuck, chemical liquid temperature adjusting means for adjusting the temperature of the chemical liquid dropped by the nozzle, and the temperature of the atmosphere in the wafer cup. The heat source part temperature adjusting means, the wafer chuck temperature adjusting means, the chemical solution temperature adjusting means, and the atmosphere temperature adjusting means so that each temperature of the atmosphere temperature adjusting means and the semiconductor wafer, the wafer chuck, the chemical solution and the atmosphere become equal to each other. And a control means for controlling the semiconductor manufacturing apparatus.