JPH08130282A - Semiconductor device - Google Patents

Abstract

PURPOSE: To improve the connecting strength of lead terminals by enhancing the fixing force of a land to the end of the terminal by solder, etc., in a semiconductor device in which the land of an integrated circuit board is fixed to the terminal by the solder, etc., and which is sealed by resin molding. CONSTITUTION: A lead terminal 23 has adjacent two leads (handgrips) 23b at the sites of the adjacent leads of the same potential, and a shared fixing piece 23a coupled to the ends. On the contrary, a wide land (b) wider than the combining allowance of the piece 23a is formed at the rear surface of the edge of a circuit board 10. Since the terminal 23 has the piece 23a having the width size of the sum or more of the widths of the leads 23b at the end, the fixing allowance becomes wider by soldering with the pieces 23a than the case of individually soldering the ends of the adjacent terminals, thereby enhancing the fixing strength. As a result, the connecting strength of the terminals is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount type semiconductor device such as a hybrid integrated circuit (hybrid IC), and more particularly to a semiconductor device formed by sealing an integrated circuit substrate with a resin package.

[0002]

2. Description of the Related Art Conventionally, a hybrid integrated circuit (hybrid I
As shown in FIG. 10, the surface mounting structure of C) QFP (Quad Flat Package) package or the like is a component mounting substrate (thick film ceramic substrate) of a hybrid integrated circuit on which various electronic components such as a semiconductor chip 1 and a capacitor 2 are mounted. 3 is placed on the island (die pad portion) of the suspension lead 4 for holding the substrate and positioned, and then the tip end portion of the inner lead (lead terminal) 5 of the lead frame and the land portion of the film wiring formed on the substrate are gold-plated. It has a structure in which bonding is performed by the wire 6 and sealed by a resin package (envelope) 7 by transfer molding. A gold wire 6 is also bonded between the semiconductor chip 1 and the land portion of the film wiring of the substrate 3.
In such a surface mounting structure of the resin package of the hybrid integrated circuit board, since the electrical connection between the inner lead 5 and the board 3 is achieved by the gold wire 6, before the wire bonding step. First, it is necessary to mechanically connect the substrate 3 on the island of the suspension lead 4 for holding the substrate. For this reason, since the suspension lead 4 is indispensable as a separate component, the outer dimensions of the resin package are different from those of the suspension lead 4.
In some cases, it depends on the outer dimensions of the semiconductor device, which has been an obstacle to the size reduction of the semiconductor device. Further, since it is necessary to perform the mechanical connection step (mounting the substrate 3 on the suspension lead 4) in a separate step before the electrical connection step (wire bonding step), it is difficult to reduce the number of steps, resulting in high manufacturing cost. Was there.

In contrast to the surface mounting structure described above, a surface mounting structure in which the substrate 3 of the hybrid integrated circuit is sealed with a resin package 7 as shown in FIG. 11 can be adopted without using the suspension lead 4. The tip portion 5a of each inner lead 5 is fixedly connected to the land portion 3a formed on the edge portion of the substrate 3 by soldering or the like.

[0004]

However, after the tip portion 5a of the inner lead 5 is soldered to the land portion 3a of the substrate 3, the surface mounting structure in which the substrate 3 and the lead 5 are sealed with the resin package 7 by transfer molding. Then, there are the following problems.

When the outer dimensions of the resin package are reduced, the width dimension of the lead terminals 5 and the pitch between the leads are reduced, so that the margin for fixing the solder is narrowed and the lead terminals 5 are reduced.
The adhesion strength (soldering strength) of is weakened. Further, since the pitch between the leads is narrow, solder bridges frequently occur, leading to a decrease in yield.

The significance of the resin mold lies in the sealing property of the substrate and the retention of the lead retainer. However, recently, the emphasis is shifting to the latter retainment of the lead retainer, and after transfer molding, the tip portion of the lead terminal 5 is formed. It is necessary that the retaining strength of the lead terminal 5 caused by the resin material around the lead terminals 5 is stronger than the fixing force of the solder or the like at 5a. However, as the width of the lead terminal 5 is reduced, the contact portion with the resin material is reduced, so that there is a problem in that the withdrawal resistance of the lead terminal is reduced.

In view of the above problems, in a semiconductor device in which a land portion of a wiring formed on an integrated circuit substrate and a tip portion of a lead terminal are fixed to each other by soldering or the like, conductively connected, and sealed with a resin mold. The first object of the present invention is to improve the connection strength of the lead terminal by increasing the fixing force of the land portion of the integrated circuit substrate to be sealed and the tip portion of the lead terminal by soldering or the like, The second object of the present invention is to
It is to improve the connection strength of the lead terminals by improving the resin adhesion of the resin package and increasing the proof strength for preventing the lead terminals from coming off.

[0008]

In order to solve the above problems, the first means of the present invention is to fix the land portion of the wiring formed on the integrated circuit substrate and the tip portion of the lead terminal with solder or the like. In a semiconductor device that is electrically conductively connected to each other and is sealed with a resin mold, two or more adjacent lead terminals have a common fixing piece connected to the tips of their handle portions. The substrate is characterized in that a wide land portion wider than the joint margin of the common fixing piece is formed. It is preferable that the lead terminals are pad-down type whose tip portions serve as board suspension portions that receive and support the side rear surface of the integrated circuit board. Here, the group of lead terminals includes positioning non-connecting lead terminals having an abutting portion that abuts a side surface of the integrated circuit board.

On the other hand, the second means of the present invention is that the land portion of the wiring formed on the integrated circuit substrate and the tip portion of the lead terminal are fixed by soldering or the like to make conductive connection and sealed with a resin mold. In the semiconductor device thus constituted, the width of the tip portion of the lead terminal is wider than the sum of the widths of the handle portions of the lead terminal. Here, the tip of the lead terminal is
For example, it can be a rectangular piece, an anchor piece, or a disk piece.

[0010]

First, the first means of the present invention is applied to a portion where adjacent leads have the same electric potential, and two or more adjacent lead terminals are connected to the tips of their handle portions. It has a common fixing piece, and the integrated circuit board is formed with a wide land portion wider than the fitting margin of the common fixing piece. Therefore, compared with the case where the tip portions of the adjacent lead terminals are individually fixed, a common fixing piece causes a margin for fixing between the tip portions of the lead terminals, so that the fixing strength is increased. be able to. As a result, the connection strength of the lead terminals is improved. As a result, the pitch between leads can be widened and the occurrence of solder bridges can be suppressed.

In the present invention, the lead terminal is of a pad-down type in which a tip portion thereof serves as a board suspending portion for receiving and supporting a back surface of an edge portion of the integrated circuit board. Since the mechanical connection is achieved at the same time as the electrical connection at the fixing portion of the substrate suspension portion, the suspension lead for holding the substrate is unnecessary. Therefore, since the suspension leads that limit the outer dimensions of the semiconductor device are eliminated, a semiconductor device in a small package can be realized. Further, in the present invention, the group of lead terminals includes positioning non-coupling (NC) lead terminals having a butting portion that abuts a side surface of the integrated circuit board. Therefore, the integrated circuit board can be positioned in a self-aligning manner, and the positioning work can be facilitated.

On the other hand, the second means of the present invention is characterized in that the width dimension of the tip portion of the lead terminal is wider than the sum of the width dimensions of the handle portion. That is, the tip end side is bulged in the width direction in a bump shape (thickness) as compared with the handle portion of the lead terminal.
For example, the shape of the tip portion can be a rectangular piece, an anchor-shaped piece, or a disk-shaped piece. However, when the tip portion has such a joist shape, the anchoring effect on the resin material of the resin package is exerted. Therefore, even if the handle portion of the lead terminal becomes narrow, the retaining strength can be increased. As a result,
The connection strength of the lead terminals is improved.

[0013]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a bottom view of the same semiconductor device, and FIG. 3 is FIG.
FIG. 7 is a sectional view taken along the line AA ′ of FIG.

The basic structure of the semiconductor device of this example is a rectangular hybrid integrated circuit board 10, an aluminum lead frame (tie bar not shown) 20 connected thereto.
It is composed of four independent lead frames 31 to 34 for exclusive mounting of power electronic components, and a surface mount type resin package (QFP) 40 molded by transfer molding for sealing these. Hybrid integrated circuit board 10
Is a ceramic integrated circuit board with resistors R1 and R on the front side
3 to R5, R7, R8, capacitors C1 to C9, diodes D2 and D3, and a resistor R on the back side.
2, R6, R9, and a control semiconductor integrated circuit (IC1) chip (flip chip) 15 are mounted, and thick film wiring (not shown) is formed on the front and back. W1 is an aluminum bonding wire that connects the anode of the diode D2 and the bonding pad P5, and W2 is an aluminum bonding wire that connects the anode of the diode D3 and the bonding pad P7. A semiconductor IC chip may be mounted on the hybrid integrated circuit board 10 and the wiring on the board may be wire-bonded.

The rectangular hybrid integrated circuit board 10 has a large number of inner leads (lead terminals) 22, 22 ', 23, 2 of the QFP lead frame 20 on its three sides.
The tips of 3 ', 24 and 25 are facing. Several types of lead terminals 22, 22 ', 23, 23', 25 are spoon-shaped bent portions (pad-down type) in which the tip side is bent downward and then returned upward as shown in FIG. ing. The tip portions of the lead terminals 22, 22 ', 23, 23' among them are land portions a, b, c on the back surface of the edge portion of the circuit board 10.
Substrate suspension parts 22a, 22 'for receiving and supporting the substrate 10
a, 23a, and 23'a. Board suspension 22
a, 22'a, 23a, 23'a are fixed by solder or a conductive adhesive to achieve electrical connection and mechanical connection at the same time. Therefore, the suspension lead for holding the substrate is unnecessary. Therefore, since the suspension leads that limit the outer dimensions of the semiconductor device are eliminated, a semiconductor device in a small package can be realized.

Here, in a portion of the back surface of the edge portion of the circuit board 10 where adjacent leads have the same electric potential, FIG.
As shown in, a specially shaped lead terminal 23 is used.

The lead terminal 23 has two adjacent lead portions (handle portions) 23b, 23b, and a common fixing piece 23a connected to the tip portions of both. On the other hand, a wide land portion b is formed on the rear surface of the edge of the circuit board 10 so as to be wider than the joint margin of the common fixing piece 23a. The normal lead terminal 22 has one lead portion having a uniform width up to the tip portion, but the lead terminal 23 has a common fixing piece 23 having a width dimension equal to or larger than the sum of the widths of the lead portions 23b at the tip portion.
Since it has a, compared with the case where the tip portions of the adjacent lead terminals 22 are individually soldered, the common fixing piece 23a has a wider fixing margin, so that the fixing strength can be improved. Can be increased. As a result, the connection strength of the lead terminals is improved. Further, since the lead pitch can be widened, the occurrence rate of solder bridges can be reduced. Here, the hook-shaped portion 23c is provided inside the bent portions of the two lead portions (handle portions) 23b and 23b of the lead terminal 23.
Are formed. Since the hook-shaped portion 23c is also resin-sealed in the resin package 40 as shown in FIGS. 1 and 2, the anchoring effect is exhibited and the connection strength of the lead terminal is increased.

A typical lead terminal 22 of one lead in this example has a uniform width, but as shown in FIG. 6A, a lead terminal having a hooked portion 22c on both sides or one side at a bent portion. 26 is also acceptable. When the hooked portion 22c is provided and the tip end portion 26a is wide (thickness), the anchoring effect can be exhibited, the retaining resistance of the lead terminal against the resin molding material is improved, and the connection strength of the lead terminal is improved. It is increasing. In addition, the lead terminal 27 shown in FIG.
A hook-shaped portion 27c is formed on the 7a side, and the tip portion 27a
Is a rectangular piece. Further, the tip portion 28a of the lead terminal 28 shown in FIG. 7A is an anchor-shaped piece.
The tip portion 29a of the lead terminal 29 shown in (a) is a disc-shaped piece.

In this embodiment, there is a lead terminal 22 'having one lead portion having a shape different from that of the lead terminal 22. A tip portion 22'a of the lead terminal 22 'serving as a substrate suspension portion is L-shaped and has a width dimension larger than the width of the lead portion. On the other hand, on the rear surface of the edge portion of the circuit board 10, a wide land portion b is formed which is wider than the alignment margin of the tip portion 22'a.

The lead terminal 23 'is the lead terminal 23.
Although it has two lead portions similarly to the above, the L-shaped common fixing piece 2 having a wider width than the common fixing piece 23a is provided at the tip thereof.
3'a. On the other hand, on the rear surface of the edge of the circuit board 10, a wide land portion c is formed which is wider than the joint margin of the common fixing piece 23'a.

Of the plurality of non-connecting leads (NC pins) of the lead frame 20, the lead terminal 24 is a non-connecting lead terminal for positioning, and contacts the side surface of the circuit board 10 as shown in FIGS. 8 and 9A. It has an abutting portion 24a.
The abutting portion 24a of the positioning non-connecting lead 24 in this example is a lead end surface. This butting part 24
As shown in FIG. 6, a has a T-shape in plan view so as to have an anchoring effect with the resin package 40. In addition,
As shown in FIG. 9 (b), a lead bent portion 24b may be formed by bending the lead tip portion downward. The tip bending portion 24b can widen the margin of contact with the side surface of the substrate. However, since it may be difficult to obtain the positioning accuracy due to spring back or the like in the bending process or the like, the positioning accuracy can be rather improved when the lead end face is left as it is in the abutting portion 24a.

The tip of the lead terminal 25 of the non-connecting lead (NC pin) is T-shaped in plan view.
This is to have anchoring effect and to secure retaining strength.

Next, the four lead frames 31 to 34 for mounting the power electronic parts will be described. The four lead frames 31 to 34 made of aluminum are located on one short side of the resin seal package 40 in a region adjacent to the integrated circuit board 10. The lead frames 31 to 34 are
Flat wide portions (component mounting portions) 31b to 34b for mounting electronic components and the like, and a large number of pad-down type lead terminals 31c to 34 branched and connected from the wide portions.
It consists of c and. The wide portion 31b of the lead frame 31 has a rectangular shape, and a portion of one side of the corner edge of the integrated circuit board 10 on one side is solder or a conductive adhesive (fixed portion) 31a.
Four lead terminals 31c are branched and extended from the wide portion 31b to the long side of the package. On the wide portion 31b near the long side of the package, one terminal surface of the chip resistor of the shunt resistor R1 is fixed by solder or a conductive adhesive. The wide portion 32b of the lead frame 32 has a plane convex shape, and the tip end side portion of the edge portion of the integrated circuit board 10 is fixed with solder or a conductive adhesive (fixed portion) 32a, and from the base of the wide portion 32b. Has four lead terminals 32c branched and extended on the short side of the package.

A lead terminal 32c 'is branched from the left lead terminal of these four lead terminals 32c to the outermost left side thereof. A power MOS transistor chip Q1 is mounted on the wide portion 32b, and its drain terminal surface is fixed by solder or a conductive adhesive. A gate terminal surface G and a source terminal surface S are formed on the upper surface of the power MOS transistor chip Q1, and the gate terminal surface G and the bonding pad P4 formed on the integrated circuit substrate 10 are made of aluminum bonding wire W3. Connected by. The source terminal surface S and the bonding pad P6 formed on the wide portion 33b of the lead frame 33, which will be described later, are made of aluminum bonding wire W4.
Connected by. Wide part 33b of the lead frame 33
Is substantially L-shaped in a plane, and the tip side portion of the peripheral portion of the integrated circuit substrate 10 is solder or conductive adhesive (fixed portion) 3
It is fixed by 3a, and six lead terminals 33c are branched and extended from the base of the wide portion 33b to the short side of the package. The above-mentioned bonding pad P6 is formed on the tip end side on the wide portion 33b, and a relatively small-sized MOS transistor chip Q3 is mounted.
The drain terminal surface is fixed with solder or a conductive adhesive. A gate terminal surface G and a source terminal surface S are formed on the upper surface of the MOS transistor chip Q3, and the gate terminal surface G and the bonding pad P2 formed on the integrated circuit substrate 10 are bonding wires W5 made of aluminum. It is connected. Also, the source terminal surface S
And a bonding pad P1 formed on the integrated circuit board 10 are connected by a bonding wire W6 made of aluminum. A power MO is provided on the base of the wide portion 33b.
The S-transistor chip Q2 is mounted, and its drain terminal surface is fixed by solder or a conductive adhesive. A gate terminal surface G and a source terminal surface S are formed on the upper surface of the power MOS transistor chip Q2, and the gate terminal surface G and the bonding pad P3 formed on the integrated circuit substrate 10 are made of aluminum bonding wire W.
7 are connected. The source terminal surface S and the bonding pad P8 formed on the wide portion 34b of the lead frame 34, which will be described later, are connected by a bonding wire W8 made of aluminum. Lead frame 33
The diode chip D1 is mounted on the base of the wide portion 33b of FIG. 1 and the cathode terminal surface thereof is fixed by solder or a conductive adhesive. An anode terminal surface A formed on the upper surface of the diode chip D1 and a lead frame 34 described later.
Bonding pad P8 formed on the wide portion 34b of the
And are connected by a bonding wire W9 made of aluminum. The wide portion 34b of the lead frame 34 has a rectangular shape, and the curved side portion is fixed to the other corner edge of the integrated circuit board 10 with solder or a conductive adhesive (fixed portion) 34a. Five lead terminals 34c are branched and extended in a comb shape on the long side of the other package. Only the bonding pad P8 is formed on the wide portion 34b, and as described above, the bonding wires W8 and W9 are connected to the bonding pad P8. A ceramic plate (metallized plate) 50 is lined on the back side of the lead frames 31 to 34.

FIG. 4 is a schematic circuit diagram for explaining the circuit structure in the area of four lead frames 31 to 34 on which power electronic components are mounted. The arrow in FIG. 4 indicates the direction of heat conduction of heat generated from the electronic component. The shunt resistor R1 is a chip resistor for detecting a voltage drop due to the flow of a large current, and one of the terminal surfaces is the lead frame 3
It is conductively fixed on one wide portion 31b, and the other terminal surface is conductively fixed on the tip end side of the wide portion 31b of the lead frame 32. Even if the amount of heat generated by the shunt resistor R1 is large, the heat is conducted to the two lead frames 31 and 32, and the large number of lead terminals 31c and 32c functioning as heat radiation fins from outside the resin seal package 40 through the wide portions 31b and 32b. It is designed to radiate heat. In particular, since the wide portion 31b of the lead frame 31 is near the contour of the resin package, the heat dissipation by the lead frame 31 is superior to the heat dissipation by the lead frame 32.
On the lead frame 32, a power MOS transistor
The amount of heat generated by the chip Q1 is considerably larger than that of the shunt resistor R1. For this reason, the power MOS transistor chip Q1 is mounted on the base portion of the wide portion 32b, that is, on the lead terminal 32c side so that heat can be quickly radiated to the outside with low heat conduction resistance. Has a tapered shape to increase heat conduction resistance and makes it difficult for heat from the chip Q1 to spread to the tip side. The tip Q1 and the shunt resistor R1 may be positively constricted,
If the layout allows, it is better to mount them on different lead frames. Here, the heat generation of the power MOS transistor chip Q1 does not matter on the gate terminal surface G as the control terminal, and the drain terminal surface and the source terminal surface S
The lead frame 3 on the drain terminal surface
2 is conductively fixed, and at the source terminal surface S, a bonding wire W4 made of aluminum having good thermal conductivity is bonded, and the other end is bonded to the bonding pad P6 of the lead frame 33. The heat generated at the source terminal surface S is conducted to the lead frame 33 via the bonding wire W4. Wide part 3 of the lead frame 33
On 3c, heat is generated on the drain terminal surface and the source terminal surface S of the power MOS transistor chip Q2 and on the cathode terminal surface and the anode terminal surface A of the diode chip D1. Transistor chip Q2 and diode
Since the chip D1 is located near the lead terminal 33c, the heat of the drain terminal surface and the cathode terminal surface is quickly radiated to the outside with a low heat conduction resistance. The heat generated at the source terminal surface S of the transistor chip Q2 is conducted to the lead frame 34 via the bonding wire W8, and the heat generated at the anode terminal surface A of the diode chip D1 is conducted to the lead frame 34 via the bonding wire W9. To do.
The lead frame 34 does not have electronic components mounted thereon, only the bonding pad P8 is formed, and the two bonding wires W8, 9 are bonded thereon. It has the same potential for power supply and heat dissipation. If circumstances permit, bonding pad P8 and anode terminal surface A
Alternatively, two or more bonding wires may be bonded to the source terminal surface S.

As described above, the shunt resistor R1 and the power MO are attached to the wide portions 31b to 34b of the lead frames 31 to 34, respectively.
The S-transistor chips Q1, Q2, and the diode chip D1 are conductively fixed, and the terminal surfaces (source terminal surface S, anode terminal surface A) of opposite polarity to the fixed terminal surface are also made of aluminum having high thermal conductivity. The bonding wires W4, W8 and W9 are connected to other lead frames. All of the heat generating parts of the power electronic component do not go through the integrated circuit board 10 via the lead frame or the bonding wire, but a large number of lead terminals 31c as heat radiation fins.
To 34c, and the heat is radiated from there to the outside of the resin package. Even in the state of being sealed by the surface mount type resin seal package 40, the heat generated from the power electronic components is well conducted to the lead terminals 31 to 34c exposed to the outside from the wide portions 31b to 34b, so that the heat dissipation characteristics are good. Becomes

Wide part 31b of the lead frames 31-34
To 34b are backside edges 31a to 34a of the integrated circuit board 10.
However, the heat transfer from the wide portions 31b to 34b to the integrated circuit board 10 is not a problem because the fixed portions are partially overlapped. Compared with the case where the power electronic component is directly mounted on the integrated circuit board 10, the thermal influence on the electronic component of the integrated circuit board 10 can be significantly reduced.

Since the chip resistors, the transistor chips Q1 and Q2, and the diode chip D1 are conductively fixed to the lead frames 31 to 34, the wiring impedance is much lower than that of the printed wiring of the integrated circuit board. In particular, it is possible to reduce the voltage drop of the wiring portion related to the shunt resistance R1.

The lead frames 31 to 34 and the integrated circuit board 10 are fixed and integrated at the fixing portions 31a to 34a. For this reason, since it is possible to suppress the blurring of the pad portion, ultrasonic bonding can be used in the wire bonding process. Moreover, positioning is easy at the time of resin molding. In this example, since the lead frames 31 to 34 have a plate thickness of 0.25 mm and the bonding wires have a thickness of 0.25 mm, the ceramic plate 50 is fixed as a backing member in consideration of the unstable bondability in the ultrasonic bonding process. I am doing it.

In the lead frames 31 and 32 on which the shunt resistor R1 is mounted, the lead terminal arrangement sides are orthogonal to each other. Further, the lead frame 33 on which the chip Q2 is mounted and the lead frame 34 whose source terminal surface S is connected via the bonding wire W8 have lead terminal arrangement sides orthogonal to each other. When the adjacent lead frames are oriented in the orthogonal direction in this manner, the flatness is improved, which contributes to the improvement of the yield.

In this example, a large number of lead terminals 31c to 34c are branched from the wide portions 31b to 34b.
When the lead terminals 22 on the integrated circuit board 10 side are connected to the board by soldering, a small amount of floating of the leads occurs momentarily when the solder is melted, but in order to have a similar floating by balancing this, The lead terminals 31c to 34c equivalent to the lead terminal 22 are used to improve the reliability of solder connection. Of course, when a large number of lead terminals 31c to 34c are solder-connected in a comb-like shape, the side faces of the lead thickness are also electrically and mechanically connected, so that the heat dissipation characteristics and the wiring impedance are more significantly reduced.
Here, in this example, a large number of lead terminals 31c to 34
The branch position of c is inside the outline of the resin seal package 40.

As seen in the lead terminal 32c ', it branches from the adjacent lead terminal 32c inside the outline of the package 40. Since the resin material also wraps around between the lead terminals, the anchoring effect is exhibited, and mutual fixing is stable and reliable.

Wide part 31b of the lead frames 31-34
34b are fixed not on the upper surface of the edge of the integrated circuit substrate 10 but on the rear surface of the edge. For this reason, it is possible to mount an electronic component that is as thick as the thickness of the integrated circuit board 10 on the wide portions 31b to 34b, and there is a margin for mounting a thick power device. Further, since the resin thickness on the rear surface side of the wide portion is thin, it is convenient for ensuring heat dissipation.

[0035]

As described above, the present invention has the following effects.

According to the first means of the present invention, as compared with the case where the tip portions of the adjacent lead terminals are individually fixed, it is preferable that the common fixing pieces are fixed between the tip portions of the lead terminals. As a result, the fixing strength can be increased.
As a result, the connection strength of the lead terminals is improved. Therefore, the pitch between leads can be widened to suppress the occurrence of solder bridges, which contributes to the improvement in yield.

According to the first means of the present invention, since the tip end side is bulged in the width direction in a bump shape (thickness shape) as compared with the handle portion of the lead terminal, the anchoring effect on the resin material of the resin package is obtained. Even if the handle portion of the lead terminal becomes narrower, the retaining strength can be increased. As a result, the connection strength of the lead terminals is improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a bottom view of the semiconductor device.

FIG. 3 is a sectional view taken along the line AA ′ in FIG. 1, showing a state of cutting.

FIG. 4 is a schematic circuit diagram illustrating a circuit configuration of regions of four lead frames on which power electronic components are mounted in the semiconductor device.

5A is a perspective view showing a lead terminal having two lead portions in the same semiconductor device, and FIG. 5B is a plan view showing a connection state between the lead terminal and a land portion on the substrate side. .

6A and 6B are perspective views respectively showing lead terminals having one lead portion in the same semiconductor device.

7A and 7B are perspective views respectively showing lead terminals having another lead portion in the same semiconductor device.

FIG. 8 is a perspective view showing a non-connecting lead terminal for positioning having an abutting portion in the semiconductor device.

9A and 9B are cross-sectional views respectively showing a positioning non-connecting lead terminal having an abutting portion in the same semiconductor device.

10A is a partial plan view showing an example of a conventional semiconductor device, and FIG. 10B is a partial cross-sectional view of the same device.

FIG. 11 is a plan view showing a surface mounting structure in which a hybrid integrated circuit board is sealed with a resin package without using suspension leads.

[Explanation of symbols]

10 ... Integrated circuit board (hybrid integrated circuit board) 15 ... Flip chip 20 ... Integrated circuit board lead frame 22, 22 ', 23, 23', 26-29 ... Inner leads (lead terminals) 22a, 22'a, 23a, 23'a, 24a, 26a
-29a ... Board hanging part 24 ... Non-connecting lead terminal for positioning 25 ... Non-connecting lead terminal (NC pin) 24a, 24b ... Abutting part 31-34 ... Lead frame 31a-34a of power electronic component ... Fixing part 31b-34b Wide part 31c to 34c, 32c '... Lead terminal R1 ... Shunt resistor chip Q1, Q2 ... Power MOS transistor chip D1 ... Diode chip 40 ... Surface mount type resin seal package (QFP). 50 ... Ceramic plate a, b, c ... Land part.

Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number in the office FI Technical indication H01L 23/28 E 6921-4E // H01L 25/04 25/18 H01L 25/04 Z

Claims (8)

[Claims] 1. A semiconductor device in which a land portion of a wiring formed on an integrated circuit substrate and a tip portion of a lead terminal are fixed to each other by soldering or the like for conductive connection and sealed with a resin mold, and adjacent to each other. The above lead terminals have common fixing pieces interconnected to the tips of their handle parts, and the integrated circuit board is formed with a wide land portion wider than the joint margin of the common fixing pieces. A semiconductor device characterized by the above. 2. The semiconductor device according to claim 1, wherein
A semiconductor device, wherein the lead terminal is a pad-down type in which a tip end portion thereof serves as a substrate suspending portion that receives and supports a back surface of an edge portion of the integrated circuit substrate. 3. The semiconductor device according to claim 1, wherein the group of lead terminals includes a non-connecting lead terminal for positioning having an abutting portion that abuts a side surface of the integrated circuit board. A semiconductor device characterized by: 4. The semiconductor device according to claim 1, wherein the width of the tip of the lead terminal is wider than the sum of the widths of its handle. Semiconductor device. 5. A semiconductor device in which a land portion of a wiring formed on an integrated circuit substrate and a leading end portion of a lead terminal are fixed by soldering or the like, electrically connected, and sealed with a resin mold, wherein the lead terminal is provided. The semiconductor device is characterized in that the width dimension of the tip portion of the is larger than the sum of the width dimensions of the handle portions. 6. The semiconductor device according to claim 5,
A semiconductor device, wherein the tip portion of the lead terminal is a rectangular piece. 7. The semiconductor device according to claim 5, wherein
A semiconductor device, wherein the tip portion of the lead terminal is an anchor-shaped piece. 8. The semiconductor device according to claim 5, wherein
A semiconductor device, wherein a tip portion of the lead terminal is a disc-shaped piece.