JPH0810747B2 - Manufacturing method of hybrid integrated circuit - Google Patents

Manufacturing method of hybrid integrated circuit

Info

Publication number
JPH0810747B2
JPH0810747B2 JP8594789A JP8594789A JPH0810747B2 JP H0810747 B2 JPH0810747 B2 JP H0810747B2 JP 8594789 A JP8594789 A JP 8594789A JP 8594789 A JP8594789 A JP 8594789A JP H0810747 B2 JPH0810747 B2 JP H0810747B2
Authority
JP
Japan
Prior art keywords
heat sink
lead
integrated circuit
power transistor
welded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8594789A
Other languages
Japanese (ja)
Other versions
JPH02264459A (en
Inventor
岩夫 滝口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8594789A priority Critical patent/JPH0810747B2/en
Publication of JPH02264459A publication Critical patent/JPH02264459A/en
Publication of JPH0810747B2 publication Critical patent/JPH0810747B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve a hybrid integrated circuit of this design in quality and to lessen it in cost by a method wherein a ribbon lead is spot-welded to a heat sink mounted with a power transistor, the hybrid integrated circuit is assembled, and then the ribbon lead is spot-welded to an external lead. CONSTITUTION:A part of a copper heat sink is subjected to a press working so as to enable a ribbon lead 10 to be fitted to the copper heat sink, and the lead 10 is fitted to the copper heat sink and spot-welded to form a copper heat sink 13 provided with a lead. A metallized board 12, the heat sink 13, and a power transistor 4 are stacked up on an Al heat sink 1, which are soldered in a reducing atmosphere. Then, an assembled board 9 is bonded to the heat sink 1 and a wire bonding is carried out. Next, a frame 8 is bonded, gelled resin is injected, and a lead frame electric bonding part 14 is electrically welded. By this setup, the soldering of a lead wire can be dispensed with, so that an integrated circuit of this design can be improved in quality and lessened in cost.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は自動車電装品用の混成集積回路（以下HIC
という）の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] This invention relates to a hybrid integrated circuit (hereinafter referred to as HIC) for automobile electrical components.
That is) related to the manufacturing method.

〔従来の技術〕[Conventional technology]

第３図は従来の自動車電装品用HICの構造を示す断面
図である。図において（１）はAlヒートシンク、（２）
はメタライズ基板、（３）は銅ヒートシンク、（４）は
パワートランジスタ、（５）はリード線、（61）、（6
2）ははんだ付け部、（７）はリードフレーム、（８）
はフレーム、（９）は基板である。パワートランジスタ
（４）のコレクタの引き出しは、Alヒートシンク（１）
上に、メタライズ基板（２）、銅ヒートシンク（３）及
び、パワートランジスタ（４）を積重ね環元雰囲気では
んだ付けし、（以下水素炉付けと記す）、パワートラン
ジスタ（４）がはんだ付けされているメタライズ基板
（２）に、リード線（５）をはんだ付けしていた。その
後、基板（９）及びリードフレーム（７）と一体成型し
たフレーム（８）を、Alヒートシンク（１）に接着し、
取出したリード線（５）をリードフレーム（７）にはん
だ付けし外部に引き出していた。FIG. 3 is a cross-sectional view showing the structure of a conventional HIC for automobile electrical equipment. In the figure, (1) is an Al heat sink, (2)
Is a metallized substrate, (3) is a copper heat sink, (4) is a power transistor, (5) is a lead wire, (61), (6
2) is the soldering part, (7) is the lead frame, (8)
Is a frame, and (9) is a substrate. The collector of the power transistor (4) has an Al heat sink (1).
The metallized substrate (2), the copper heat sink (3), and the power transistor (4) are soldered in a stacking atmosphere (hereinafter referred to as hydrogen furnace), and the power transistor (4) is soldered. The lead wire (5) was soldered to the existing metallized substrate (2). Then, the frame (8) integrally molded with the substrate (9) and the lead frame (7) is adhered to the Al heat sink (1),
The lead wire (5) taken out was soldered to the lead frame (7) and pulled out to the outside.

次に動作について説明する。銅ヒートシンク（３）は
パワートランジスタ（４）の放熱を目的とする一次ヒー
トシンクであり、メタライズ基板（２）はパワートラン
ジスタ（４）を外部から絶縁することを目的とするもの
である。Alヒートシンク（１）は更にパワートランジス
タ（４）の放熱を助け、また基板（９）からの放熱を目
的とする二次ヒートシンクであり、更には、全体をパツ
ケージする目的を持つものである。Next, the operation will be described. The copper heat sink (3) is a primary heat sink for the purpose of heat dissipation of the power transistor (4), and the metallized substrate (2) is for the purpose of insulating the power transistor (4) from the outside. The Al heatsink (1) is a secondary heatsink for the purpose of further assisting the heat dissipation of the power transistor (4) and the heat dissipation from the substrate (9), and further has the purpose of packaging the whole.

ここで、パワートランジスタ（４）のコレクタを取り
出すため、メタライズ基板（２）にはんだ付けされたパ
ワートランジスタ（４）のコレクタ共通電極部へリード
線（５）をはんだ付けする方法がとられていた。Here, in order to take out the collector of the power transistor (4), a method of soldering the lead wire (5) to the collector common electrode portion of the power transistor (4) soldered to the metallized substrate (2) has been adopted. .

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

従来のHIC製造方法は以上のように行われていたの
で、パワートランジスタのコレクター引き出しのリード
線のはんだ付け工程が繁雑で品質のバラツキが大きいこ
とが問題であつた。すなわち（ア）はんだごてによる作
業性の低下、（イ）はんだごて加熱温度がAlヒートシン
クにより放熱されるためAlヒートシンクを加熱する必要
があること、（ウ）パワートランジスタの汚染を防ぐた
めはんだ付け後洗浄が必要なこと、などである。Since the conventional HIC manufacturing method is performed as described above, there is a problem in that the soldering process of the lead wire of the collector lead-out of the power transistor is complicated and the quality is largely varied. That is, (a) the workability is reduced by the soldering iron, (b) the soldering iron heating temperature is radiated by the Al heatsink, so the Al heatsink needs to be heated, and (c) the soldering to prevent the contamination of the power transistor. It is necessary to wash after attachment.

この発明は、上記のような問題点を確決するためにな
されたもので、パワートランジスタのコレクタ引出しに
リード線のはんだ付けを、取りやめリボンリードと、銅
ヒートシンクをスポツト溶接することにより、品質の向
上と省力による原価低減を図ることを目的とするもので
ある。The present invention has been made in order to determine the above-mentioned problems, and improves the quality by spotting the lead wire soldering to the collector lead-out of the power transistor, the withdrawal ribbon lead and the copper heat sink. The purpose is to reduce costs by saving labor.

〔課題を解決するための手段〕[Means for solving the problem]

この発明に係るHICの製造方法はパラートランジスタ
のコレクタを引き出す方法を、従来、メタライズ基板へ
リード線をはんだ付けしていたのを、あらかじめ銅ヒー
トシンクと、リボンリードをスポツト溶接し、リード付
け銅ヒートシンクとして、供給し、水素炉付けできるよ
うにしたものである。The HIC manufacturing method according to the present invention is the method of pulling out the collector of the para-transistor, in which the lead wire is conventionally soldered to the metallized substrate. As a result, it can be supplied and attached to a hydrogen furnace.

〔作用〕[Action]

パワートランジスタのコレクタを取り出すために、あ
らかじめ、パワートランジスタが水素炉付けされる銅ヒ
ートシンクとリボンリードをスポツト溶接して、供給す
ることにより、リード線のはんだごて付けが不要とな
り、はんだごて付けによるフラツクスなどの洗浄が不要
となりリードフレームと上記リボンリードの電気溶接化
が可能となる。In order to take out the collector of the power transistor, the copper heat sink to which the power transistor is attached to the hydrogen furnace and the ribbon lead are spot-welded in advance and supplied to eliminate the need for soldering the lead wire. This eliminates the need for cleaning the flux and the like, and enables electrical welding of the lead frame and the ribbon lead.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第
１図はこの発明の一実施例による製造方法を用いたHIC
の断面図、第２図は第１図に示すＡ部の拡大図である。
図において（１）、（２）、（４）、（７）〜（９）は
第３図の従来例に示したものと同等であるので説明を省
略する。（10）はリボンリード、（11）はスポツト溶接
部、（12）はメタライズ部、（13）はリード付き銅ヒー
トシンク、（14）はリードフレーム電気溶接部である。
リード付き銅ヒートシンク（13）は、第３図の従来例に
示した銅ヒートシンク（３）の裏面の一部を、リボンリ
ード（10）がはまるように、プレス加工し、そこにリボ
ンリード（10）をはめスポツト溶接を行う。リード付き
銅ヒートシンク（13）を使用した水素炉付けは第３図の
従来法と同じであり、水素炉付け後、リボンリード（1
0）を折り曲げる。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows HIC using the manufacturing method according to one embodiment of the present invention.
FIG. 2 is an enlarged view of a portion A shown in FIG.
In the figure, (1), (2), (4) and (7) to (9) are the same as those shown in the conventional example of FIG. (10) is a ribbon lead, (11) is a spot welding part, (12) is a metallized part, (13) is a copper heat sink with a lead, and (14) is a lead frame electric welding part.
The leaded copper heat sink (13) is formed by pressing a part of the back surface of the copper heat sink (3) shown in the conventional example of FIG. 3 so that the ribbon lead (10) fits into the ribbon heat sink (10). ) And perform spot welding. The hydrogen furnace attachment using the copper heat sink with lead (13) is the same as the conventional method in Fig. 3. After the hydrogen furnace attachment, the ribbon lead (1
Bend (0).

他の組立られた基板（９）をAlヒートシンク（１）に
接着し、ワイヤボンドを行う。The other assembled substrate (9) is adhered to the Al heat sink (1) and wire bonding is performed.

次にフレーム（８）を接着し、ゲル状樹脂を注入し、
リードフレーム電気溶接部（14）を電気溶接する。Next, bond the frame (8), inject gel resin,
Electrically weld the leadframe electric welding part (14).

なおリボンリード（10）を銅ヒートシンク（３）にス
ポツト溶接した、リード付き銅ヒートシンク（13）の導
入は、既に一部品種で実用化している。The introduction of the copper heat sink with lead (13), in which the ribbon lead (10) is spot welded to the copper heat sink (3), has already been put to practical use in some products.

〔発明の効果〕〔The invention's effect〕

メタライズ基板へのリードはでだ付け及び外部リード
フレームへのはんだ付けが各々スポツト溶接への移行で
大幅な加工費の低減が図れる。Leading to the metallized substrate and soldering to the external lead frame are switched to spot welding, respectively, which can significantly reduce the processing cost.

【図面の簡単な説明】[Brief description of drawings]

第１図はこの発明の一実施例による製造方法を用いたHI
Cの断面図、第２図は第１図に示すＡ部の拡大図、第３
図は従来のHICの構造を示す断面図である。 図において（１）はAlヒートシンク、（２）はメタライ
ズ基板、（４）はパワートランジスタ、（７）はリード
フレーム、（８）はフレーム、（９）は基板、（10）は
リボンリード、（11）はスポツト溶接部、（12）はメタ
ライズ部、（13）はリード付き銅ヒートシンク、（14）
はリードフレーム電気溶接部である。 なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 shows an HI using a manufacturing method according to an embodiment of the present invention.
Sectional view of C, FIG. 2 is an enlarged view of part A shown in FIG. 1, 3
The figure is a cross-sectional view showing the structure of a conventional HIC. In the figure, (1) is an Al heat sink, (2) is a metallized substrate, (4) is a power transistor, (7) is a lead frame, (8) is a frame, (9) is a substrate, (10) is a ribbon lead, and ( (11) is spot welded part, (12) is metallized part, (13) is copper heat sink with lead, (14)
Is a leadframe electric weld. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】混成集積回路の製造方法において、パワー
トランジスタのコレクタを外部に接続するためにあらか
じめパワートランジスタを載せるヒートシンクにリボン
リードをスポツト溶接して後組み立て、外部リードに、
スポツト溶接する構造を備えた混成集積回路の製造方
法。1. A method of manufacturing a hybrid integrated circuit, wherein a ribbon lead is spot-welded to a heat sink on which a power transistor is mounted in advance in order to connect the collector of the power transistor to the outside, and the post assembly is then performed.
Method for manufacturing hybrid integrated circuit having spot welding structure.
JP8594789A 1989-04-05 1989-04-05 Manufacturing method of hybrid integrated circuit Expired - Lifetime JPH0810747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8594789A JPH0810747B2 (en) 1989-04-05 1989-04-05 Manufacturing method of hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8594789A JPH0810747B2 (en) 1989-04-05 1989-04-05 Manufacturing method of hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPH02264459A JPH02264459A (en) 1990-10-29
JPH0810747B2 true JPH0810747B2 (en) 1996-01-31

Family

ID=13872959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8594789A Expired - Lifetime JPH0810747B2 (en) 1989-04-05 1989-04-05 Manufacturing method of hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPH0810747B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678773B1 (en) * 1991-07-05 1997-03-14 Thomson Csf WIRING PROCESS BETWEEN HOUSING OUTLETS AND HYBRID ELEMENTS.
JP3736001B2 (en) * 1996-02-29 2006-01-18 株式会社デンソー Electronic component mounting method
JP2009194275A (en) * 2008-02-18 2009-08-27 Sumitomo Electric Ind Ltd Assembling structure for packaging, and resin sealed semiconductor device
JP2011103367A (en) * 2009-11-11 2011-05-26 Mitsubishi Electric Corp Power semiconductor device

Also Published As

Publication number Publication date
JPH02264459A (en) 1990-10-29

Similar Documents

Publication Publication Date Title
US6914325B2 (en) Power semiconductor module
JP5661183B2 (en) Semiconductor device and manufacturing method thereof
JP4582161B2 (en) Power converter
CN110233136A (en) Cooling device, semiconductor module and vehicle
CN205428913U (en) Power semiconductor module
JPH0810747B2 (en) Manufacturing method of hybrid integrated circuit
WO2020254143A1 (en) Half-bridge power assembly
JP2012089794A (en) Semiconductor device
US20170288564A1 (en) Power conversion apparatus and method for manufacturing the same
JP2002076254A (en) Power semiconductor module and its manufacturing method
US5532517A (en) Hybrid integrated circuit device with heat suppression means provided in the vicinity of solder bonding areas
JP2000183278A (en) Method for assembling power module
JPS60160624A (en) Dielectric isolation for semiconductor chip
JPH0296342A (en) Wire-bonding device
JPH1065084A (en) Lead frame
JPS6379331A (en) Wire bonding equipment
JP3991649B2 (en) Semiconductor device manufacturing method and semiconductor device
JPH06132457A (en) Semiconductor device and manufacture thereof
JP2003023137A (en) Power semiconductor module
JP2665170B2 (en) Semiconductor device
JP2000349210A (en) Composite semiconductor device
JP4201060B2 (en) Semiconductor device and manufacturing method thereof
JP2564487B2 (en) Circuit board and hybrid integrated circuit thereof
JPH02150051A (en) Semiconductor module
JPS5847709Y2 (en) Resin-encapsulated semiconductor device