JPH08107261A - Mutual connecting structure and method of electric circuit device - Google Patents

Abstract

PURPOSE: To provide a high reliable connecting structure despite high density capable of improving high evenness in the intervals between a package and a board by using metallic bumps comprising a brazing material junctioned with metallic balls on the concave receptacles formed on the surface of a package substrate. CONSTITUTION: Within the mutual connecting structure of electric circuit device connecting metallic bumps 21 of a ceramic package 1 and electrode terminals 28 of a package board 2, receptacles in sectionally concave shape are formed on the surface of the ceramic package 1 while the ball shaped metallic bumps 21 are junctioned with the electrode pads on the bottom part of the receptacles. Furthermore, a filmy electrode terminals 28 having wettability to solder 31 are formed on the surface of the packaging board 2 so that the metallic bumps 21 may be junctioned with the electrode terminals 28 using the solder 31.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connecting structure and a connecting method for electric circuit devices, and more particularly to an electrode terminal of a ball grid array structure provided in a semiconductor package and an electrode terminal of a semiconductor package mounting board. The present invention relates to a connection structure and a connection method for mutually connecting electric circuit devices.

[0002]

2. Description of the Related Art With the increase in the density of integrated circuits such as LSI, the density of input / output terminals tends to increase. Along with this, there has been a demand for a semiconductor device housing package having high-density input / output terminals. In order to meet the demand, instead of the conventional pin grid array, a ball grid array (BG having a ball-shaped connection terminal is provided.
A) Structure packages are beginning to be adopted.

An example of an interconnection structure between a package having an output terminal having a BGA structure and a connection terminal of a package mounting board is disclosed in Japanese Patent Publication No. 5-508736 and US Pat. No. 5,147,084. Is disclosed in. As shown in FIG. 8, the connection method and the connection structure are as follows. First, the high melting point solder ball 84 joined with the low melting point solder 83.
A component (package) 81 provided with and a board 82 provided with the low melting point solder 86 on the bonding pad 85 are prepared. Next, the high melting point solder balls 84 are brought into contact with the low melting point solder 86 on the board 82 and then heated to a temperature at which the low melting point solder 86 melts to obtain an interconnection structure (FIG. 9). In addition,
The interconnect structure shown in FIG. 9 is provided with an insulating layer 97 made of epoxy resin or the like. This insulation layer 97
Prevents the low melting point solder 83 from flowing to adjacent bumps and short-circuits during mutual bonding, and also serves to fix the solder balls 84 to the low melting point solder 83.

Further, Japanese Unexamined Patent Publication No. 61-203648 discloses a means for providing a recess in an insulating member, using a sidewall of the recess as a solder dam, and providing a solder bump protruding from the recess in the recess. Has been done. As a result, even if the height of the solder bump is high, it is possible to prevent a short circuit between the electrode terminals during solder reflow.
Also, in order to prevent the substrate from cracking due to the difference in the thermal expansion coefficient between the chip and the substrate, a means is provided in which a gap is provided between the solder dam and the solder bump and the deformation of the solder bump due to the difference in thermal expansion is absorbed by the gap. Has been done.

In Japanese Utility Model Laid-Open No. 5-72177, FIG.
As shown in FIG. 3, a through hole 102 is provided in the outermost layer 101 of the multilayer substrate 100, a conductor ball 104 such as Cu is arranged on the electrode pad 103 in the through hole 102, and the conductor ball 104 is fixed by the solder 105. There is disclosed a means for forming a solder bump (metal bump).

In US Pat. No. 5,154,341,
By obtaining an hourglass-shaped interconnection structure, the thermal fatigue resistance of the connection is improved. The hourglass-shaped connection structure is formed by the following means. As shown in FIG. 11A, first, the solder microballs 114 with a low melting point are fixed to the terminals 113 of the board 111 with flux. Next, the component 112 having the high melting point solder spacer 115 is
After the spacers 115 are superposed so that the tips thereof contact the pads 113, the solder microballs 114 are heated, but the solder spacers 115 are heated to a temperature at which they are not melted.
The melted solder microballs 114 are spacers 115.
11 (b), an hourglass-shaped interconnection structure having a low melting point solder coating layer 116 is formed as shown in FIG. 11 (b).

[0007]

[Problems to be Solved by the Invention] Japanese Patent Publication No. 5-50873
In the case of JP No. 6, the solder bumps on the package 81 side are coated with a low melting point solder paste on the high melting point solder balls 84 and adhered to the pads, and then the low melting point solder is melted to form a high melting point solder. It is formed by heating to a temperature at which the solder ball 84 does not melt. Therefore, the solder bumps are likely to have height variations. When connecting to each other,
The solder bumps are in contact with the low melting point solder 86 on the board 82 side, and the bonding pad 85 and the low melting point solder 86 are contacted.
Since the heights of the solder bumps and the low melting point solder 86 are superposed on each other, terminals with insufficient contact are likely to occur. Further, the uniformity of the space between the board 82 and the package 81 is not always satisfactory.

The solder bump disclosed in Japanese Patent Laid-Open No. 61-203648 is formed by placing a solder ball in a solder dam and reflowing the solder ball. Since the height and shape of the solder dump are influenced by the surface tension during solder reflow, the amount of solder, the state of the dam, etc., variations easily occur.

In the bump disclosed in Japanese Utility Model Laid-Open No. 5-72177, the conductor ball 104 is fixed to the through hole 102 formed in the outermost layer 101 of the multilayer substrate 100 with the solder 105. Since the relationship between the shape and the shape of the conductor ball 104 is not specified, the conductor ball 10
There is a problem with the position accuracy of 4. Further, no consideration is given to the method of connecting the multilayer substrate 100 and the board.

The interconnect structure disclosed in US Pat. No. 5,154,341 has a high melting point solder spacer 115.
And a low melting point solder coating layer 116. Judging from the method of forming the interconnection structure, the reliability of the electrical connection between the component 112 and the board 111 is relatively good,
It is judged that there are few disconnections. However, since the solder spacer (bump) 115 is formed by placing a solder ball on a pad such as W (tungsten) and melting it, the height and position accuracy of the solder spacer (bump) 115 are improved. There was a problem that it was difficult to do. Further, the solder microballs 114 having a low melting point are melted, but the solder spacers 115 having a high melting point must be interconnected within a narrow temperature range so that it is difficult to control the temperature at the time of connection. was there.

The present invention has been made in view of the above problems, and relates to the interconnection between a semiconductor package and a package mounting board, which is highly reliable because of high density and no disconnection. It is an object of the present invention to provide a connecting structure and a connecting method for mutually connecting electric circuit devices capable of improving the uniformity of the distance between the board and the board.

[0012]

In order to achieve the above-mentioned object, an electric circuit device mutual connection structure according to the present invention has a structure in which a metal bump of a ceramic package and an electrode terminal of a mounting board are connected to each other. In the connection structure, a receiving portion having a concave sectional view is formed on the surface of the substrate of the ceramic package, and a ball-shaped metal bump is joined to the electrode pad formed at the bottom of the receiving portion with a brazing material. The board is characterized in that film-like electrode terminals having wettability with solder are formed on the surface of the board, and the metal bumps and the electrode terminals are joined by solder (1).

According to the connection structure of electric circuit devices of the present invention, in the connection structure (1) of electric circuit devices, the opening diameter of the receiving portion is 80 to 120% of the diameter of the metal bump. It is characterized by a depth of 15 to 35% (2).

The connection structure for electric circuit devices according to the present invention is the same as the connection structure for electric circuit devices (1) or (2), wherein the metal bumps are covered with a Ni plating layer and further with an Au plating layer. It is characterized by being coated (3).

Further, in the connection structure for mutual electric circuit devices according to the present invention, in the connection structure (1) or (2) for mutual electric circuit devices, a gap is provided between the side wall part of the receiving part and the brazing material. It is characterized by being formed (4).

A method of connecting electric circuit devices to each other according to the present invention is a method of connecting electric circuit devices to each other in which metal bumps of a ceramic package and electrode terminals of a mounting board are connected to each other. Part is formed,
A film electrode having wettability with the solder formed on the surface of the mounting board using the ceramic package in which metal bumps are joined to the electrode pad arranged at the bottom of the receiving portion with a brazing material. After arranging a solder ball or solder paste on the terminals and stacking them so that the tops of the metal bumps come into contact with the film-like electrode terminals, the solder ball or solder paste is melted. It is characterized in that it is heated to a certain temperature and connected (5).

According to the method for connecting electric circuit devices to each other according to the present invention, in the connecting method (5) for electric circuit devices, the receiving portion having a concave shape in cross section has an opening diameter with respect to a diameter of the metal bump. 80-120%, depth 15-35%
The feature is that the shape is set to (6).

According to the method for connecting electric circuit devices to each other according to the present invention, in the method (5) or (6) for connecting electric circuit devices to each other, the surface of the metal bump is covered with a Ni plating layer, and further the Au plating is applied. It is characterized by using metal bumps covered with layers (7).

Further, the method for connecting electric circuit devices to each other according to the present invention is the same as the method (5) or (6) for connecting electric circuit devices, wherein a gap is provided between the side wall of the receiving portion and the brazing material. The metal bump and the film-like electrode terminal are connected in the formed state (8).

[0020]

In the structure for connecting the electric circuit devices to each other according to the above structure, the ceramic package substrate is provided with the receiving portion having a concave sectional view, and the receiving portion bottom is provided with the electrode pad. A ball-shaped metal bump as an electrode terminal is connected to the electrode pad. The shape of the receiving portion and the shape of the metal bump are set so that the metal bump is bonded to a predetermined position of the receiving portion. Therefore, the positional accuracy of the metal bumps and the bonding state of the metal bumps and the electrode pads are extremely good, and the height accuracy (coplanarity) of the bumps is also good. The shape of the receiving portion has an opening diameter of 80 to the diameter of the metal bump.
120%, depth 15-30%, preferably 9 each
0 to 110% and 20 to 30% are suitable.

Further, in the structure for connecting the electric circuit devices to each other according to the above-mentioned structure, the ball-shaped metal bumps having a small diameter variation with respect to the electrode pads such as W provided on the bottom of the receiving portion. Are joined with a brazing material such as Ag (silver) braze, and are joined with solder in a state of being superposed so that the tops of the metal bumps are in contact with electrode pads such as a W metallization layer which is a connection terminal of the mounting board. ing.
Therefore, the electrical reliability of the interconnection is high, and the uniformity of the distance between the ceramic package and the mounting board is excellent.

The method of obtaining the connection structure for the electric circuit devices having the above-mentioned configuration is based on the following steps. The ceramic package is superposed on the mounting board so that the tops of the metal bumps, which are the electrode terminals on the side of the ceramic package, are in contact with the electrode terminals of the mounting board. In this state, the solder is heated to a temperature at which it melts and wets and spreads on the metal bumps. According to this connection method, even if there is a connection portion where the tip portion of the metal bump and the electrode terminal of the mounting board do not contact, the molten solder spreads so as to fill the gap. Therefore, a connection portion (disconnection) which is not mutually connected does not occur. The distance between the ceramic package and the mounting board is
Since the height depends on the height of the metal bumps, it is possible to obtain a connection structure with uniform intervals. Therefore, when the electric circuit device is heated / cooled, thermal stress does not concentrate on a specific interconnect terminal, so that the substrate is less likely to be damaged by the thermal stress.

As described above, the shape of the concave receiving portion in cross section is 80 to 120% in opening diameter and 15 to 35% in depth, preferably 15 to 35%, with respect to the diameter of the ball-shaped metal bump. 90 to 110% and 20 to 30% are suitable.
The reason is as follows.

If the receiving portion is too deep, the height of the projection of the metal bump becomes low, and the metal bump cannot serve as a bump. On the other hand, if the receiving portion is too shallow, it is difficult to dispose the metal bump on the receiving portion during bonding. Further, if the diameter of the receiving portion is too large, the positional accuracy of the metal bumps deteriorates, and if the diameter of the receiving portion is too small, it is difficult for the metal bumps to enter the recesses, which makes bonding difficult.

The pitch of the connection terminals of the BGA package is usually in the range of 0.4 to 2.0 mm. The diameter of the metal balls used for the metal bumps is 50 to 75% of the pitch of the connection terminals as a size satisfying the function as the connection terminals.
Is set to Therefore, the diameter of the metal ball as a bump is about 0.2 to 1.5 mm.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a connecting structure and a connecting method for electric circuit devices according to the present invention will be described below with reference to the drawings.
Note that components having the same functions as those of the conventional example are denoted by the same reference numerals. (Embodiment 1) Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is a vertical sectional view schematically showing a state in which a ceramic package is mounted on a ceramic board, and FIGS. 2 and 3 are partially enlarged sectional views showing a connecting portion.

In FIG. 1, the ceramic package 1 and the ceramic board 2 are connected by an interconnection structure 3. Reference numeral 4 denotes a laminated substrate made of alumina, which has a conductor circuit inside. The semiconductor device 5 and the input side connection terminal of the ceramic package 1 are electrically connected by a bonding wire 6. FIG. 2 shows an enlarged sectional structure of a connecting portion between the ceramic package 1 and the ceramic board 2 before interconnection. A receiving portion 22 having a concave cross-sectional view is formed on the surface of the substrate 4, and the receiving portion 2
An electrode pad (hereinafter, referred to as a pad) 23 including a W metallization layer as a lower layer and a Ni plating layer as an upper layer is disposed on the bottom surface of 2, and the Cu ball 24 corresponds to the pad 23.
A connection terminal (hereinafter, referred to as a metal bump) 21 is formed by being joined by g solder 25. The pad 23 is electrically connected to the internal circuit of the ceramic package 1 through the through hole 26. The surface of the Cu ball 24 is Ni-plated and Au-plated thereon. The thickness of Au plating is preferably 1 μm to 3 μm. If it is too thin, it may react with solder at the time of joining to lose the effect of Au plating, and if it is too thick, problems with strength may occur.

The ceramic board 2 is formed of an alumina substrate, and on the surface thereof, a W-metallized film and a film-like electrode terminal 28 plated with Ni on the surface thereof are formed at positions facing the metal bumps 21 of the ceramic package 1. It is arranged.

Here, the diameter of the Cu ball 24 is 0.55 m.
The thickness of the plating layer on the surface of the Cu ball 24 is about 5 μm for Ni plating and about 1.5 μm for Au plating. The shape of the receiving portion 22 has an opening diameter of 0.5 mm and a depth of 0.12.
The distance between the centers of the openings (the pitch distance between the metal bumps 21) is 1.0 mm. In addition, the metal bump 21
Although Cu is used as the material of Example 1 in other materials, other materials such as Cu-Ag alloy, Kovar, 42 alloy, and Pb-Sn are used.
Any metal that has a higher melting point than system solder and that does not melt during brazing such as Ag brazing may be used.

The shape of the electrode terminal 28 arranged on the surface of the ceramic board 2 is 0.7 mm in width and 0.7 m in length.
m, the W metallization layer has a thickness of about 20 μm, and the Ni plating layer has a thickness of about 2 μm.

In joining the ceramic package 1 to the ceramic board 2, first, as shown in FIG. 2, 37 Pb is placed on the electrode terminals 28 of the ceramic board 2.
The / 63Sn solder balls 29 are arranged by being adhered with flux. Then, the electrode terminals 28 are stacked so that the tops of the metal bumps 21 in the ceramic package 1 are in contact with each other. In this state, 210 ℃ in nitrogen gas atmosphere
Heat to.

The interconnect structure after bonding is shown in FIG. The metal bumps 21 and the electrode terminals 28 are sufficiently bonded to each other by the solder layer 31 both in terms of strength and electricity. Further, the solder layer 31 shows good wetting and spreading with respect to the metal bump 21 and the electrode terminal 28. In particular, the meniscus is widened toward the end with the electrode terminal 28, and stress concentration is unlikely to occur at the connection portion.

Further, in the ceramic package 1 used in Example 1, in addition to the metal bumps 21 having good positional accuracy and good coplanarity, solder flows from the side of the metal bumps 21 at the time of interconnection, Since it acts so as to fill the space between the metal bump 21 and the electrode terminal 28, electrical connection failure hardly occurs, and the occurrence of disconnection can be suppressed to a minimum. At the same time, the dimensional accuracy between the ceramic package 1 and the ceramic board 2 can be made extremely high.

Further, since the metal bumps 21 of the ceramic package 1 used in the first embodiment are formed by using Cu balls and Ag solder 25 having a higher melting point than solder,
The degree of freedom in selecting the joining conditions when connecting to the ceramic board 2 with solder is excellent, and the workability is excellent.

(Embodiment 2) Next, a connection structure and a connection method for mutual connection of electric circuit devices according to Embodiment 2 of the present invention will be described. In the connecting structure and the connecting method of the electric circuit devices according to the second embodiment, instead of the solder balls 29, as shown in FIG.
The solder paste 42 was used for joining as shown in FIG. Also, instead of the ceramic board 2, a plastic board 43
Was used. Other conditions are the same as those shown in the first embodiment. The cross-sectional structure of the connecting portion is as shown in FIGS.

The solder paste 42 contains 37P in the flux.
It is a dispersion of b / 63Sn solder powder, and has a viscosity adjusted to be suitable for application to the electrode terminals 41 of the plastic board 43. As shown in FIG. 4A or FIG. 5A, the solder paste 42 was attached to the electrode terminals 41 by the screen printing method. Next, the electrode terminal 4
The ceramic package 1 was stacked so that the tops of the metal bumps 21 were in contact with the surface of 1. Then, the ceramic package 1 and the plastic board 43 were interconnected by heating under the same conditions as in Example 1.

The obtained interconnection structure is the same as that shown in FIG. 3, and the characteristics of the interconnection structure are almost free from disconnection.
It was confirmed that there was no difference from the case of Example 1.

(Embodiment 3) In the case of Embodiments 1 and 2, the terminals having the structure shown in FIG. 2 were used as the connection terminals of the ceramic package 1. It is also effective to partially change this structure to obtain the structure shown in FIG. That is, the structure is such that the gap 63 is provided between the side wall 61 of the receiving portion 22 and the brazing material 62. In order to form the gap 63, the amount of the brazing material when joining the metal ball 24 to the receiving portion 22 may be reduced as compared with the case where the gap 63 is not formed. Since the ceramics such as alumina which is not wettable with the molten brazing material 62 is exposed on the side wall 61 of the receiving portion, the gap is easily formed. It is more effective if the receiving part is widened upward. Such a gap is effective in alleviating the thermal stress when the ceramic package and the board having different thermal expansion coefficients of the substrate are connected to each other and thermal stress is generated in the substrate due to repeated heating and cooling.

(Comparative Example) FIG. 7 shows a comparative example. FIG. 7 is an enlarged cross-sectional view showing the connecting portion. The connection terminals (solder bumps) 73 on the ceramic package side are electrode pads (Ni plating on the surface of the W metallization) 74 on the alumina substrate 71.
It is formed by applying a 95Pb / 5Sn solder paste to and reflowing it. Diameter of solder bump 73,
The bump interval and the like are substantially the same as the conditions of the first embodiment. On the surface of the plastic substrate 72 of the package mounting board, the Cu layer 76 and the 37Pb / 63Sn solder layer 77 on the Cu layer 76 are disposed on the surface thereof as the electrode terminals 75 as connection terminals.

When the ceramic package and the electrode terminals of the package mounting board are joined together, the tops of the solder bumps 73 of the ceramic package are placed in contact with the solder layer 77 of the electrode terminals 75 of the package mounting board. It was In this state, the solder layer 77 was melted and heated to a temperature of 190 ° C. at which the solder bumps 73 were not melted.

As a result, it was found that the rate of occurrence of disconnection after interconnection was relatively high. The rate of occurrence of wire breakage for all connection points was 0% in the case of Example 1, but was about 10% in the case of the above-mentioned comparative example, and further improvement is required for practical use. It was The reason why the wire breakage rate of the comparative example is relatively high is that the solder bumps 73 of the ceramic package do not have sufficient coplanarity, and the solder bumps 73 of the ceramic package are superposed on the electrode terminals 75 of the package mounting board. In this case, it is difficult to select the optimum joining condition because a gap is likely to be formed between the terminals and the selection range of the melting temperature of the solder at the time of joining is narrow.

[0042]

As described in detail above, in the connecting structure and connecting method for electric circuit devices according to the present invention, the concave-shaped receiving portion formed on the surface of the package substrate is used as the connecting terminal of the ceramic package. A metal bump having a high melting point metal ball joined by a brazing material is used. The metal bumps have high positional accuracy and small height variations. When connecting the metal bumps of the ceramic package and the connection terminals of the mounting board, the metal bumps are stacked so that the tops of the metal bumps contact the electrode terminals of the mounting board. Only for the connection between the metal bump and the electrode terminal of the board, solder having a melting point lower than that of other members forming the connection structure is used. When connecting the metal bump and the electrode terminal with solder, the solder acts so as to flow between the metal bump and the electrode terminal.

Therefore, according to the connecting structure and the connecting method of the electric circuit devices according to the present invention, the disconnection due to the poor connection hardly occurs. Therefore, the electrical reliability is extremely high. Further, since the distance between the connecting surfaces of the ceramic package and the board is uniform, thermal stress does not concentrate on a specific interconnect terminal when the electric circuit device is heated or cooled. Substrate destruction is less likely to occur due to stress. Furthermore, since no solder is used for the metal bumps of the ceramic package, the solder heating temperature at the time of interconnection has a wide selection range, and the workability is excellent.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing a state in which electric circuit devices according to a first embodiment of the present invention are connected to each other.

FIG. 2 is a partially enlarged cross-sectional view showing a connection portion before the interconnection of the electric circuit device according to the first embodiment of the present invention.

FIG. 3 is a partially enlarged cross-sectional view showing a connection part after interconnection of the electric circuit device according to the first embodiment of the present invention.

FIG. 4 is a partially enlarged cross-sectional view showing a connection portion of an electric circuit device according to a second embodiment of the present invention, (a) showing a state before interconnection and (b) showing a state after interconnection. Shows.

5A and 5B are partially enlarged cross-sectional views showing a connection portion of an electric circuit device according to a second embodiment of the present invention, FIG. 5A shows a state before interconnection, and FIG. 5B shows a state after interconnection. Shows.

FIG. 6 is a partially enlarged cross-sectional view schematically showing a connecting portion used for interconnection of an electric circuit device according to a third embodiment of the present invention.

FIG. 7 is a partially enlarged cross-sectional view schematically showing a connection portion of an electric circuit device according to a comparative example, (a) showing a state before interconnection, (b) showing a state after interconnection. ing.

FIG. 8 is a partially enlarged cross-sectional view schematically showing a connection portion of a conventional electric circuit device before interconnection.

FIG. 9 is a partially enlarged cross-sectional view schematically showing a connection portion of a conventional electric circuit device after interconnection.

FIG. 10: Conventional B applied to a ceramic package
It is a partially enlarged view of a GA type connection terminal.

FIG. 11 is a partially enlarged cross-sectional view schematically showing a connection portion of another conventional electric circuit device, in which (a) shows a state before interconnection and (b) shows a state after interconnection. ing.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ceramic package 2 Ceramic board 3 Interconnect structure 4 Substrate 5 Semiconductor device 21 Metal bump 22 Receiving part 23 Electrode pad 24 Cu ball 25 Ag solder 28 (Membrane) electrode terminal 29 Solder ball 31 Solder layer 41 Electrode terminal 42 Solder paste 43 Plastic board 61 Side wall 62 Brazing material 63 Gap

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akiyoshi Kosakada 2701-1, Iwakura, Omine-cho, Mine-shi, Yamaguchi Prefecture Sumitomo Metal Ceramics Co., Ltd. (72) Takuji Ito 4-chome, Kitamahama, Chuo-ku, Osaka City No. 33 Sumitomo Metal Industries, Ltd. (72) Inventor Yasuo Nakatsuka 4-53, Kitahama, Chuo-ku, Osaka City, Osaka Prefecture Sumitomo Metal Industries, Ltd.

Claims (8)

[Claims] 1. In a connecting structure of electric circuit devices for connecting a metal bump of a ceramic package and an electrode terminal of a mounting board, a receiving portion having a concave sectional view is formed on a surface of a substrate of the ceramic package, A ball-shaped metal bump is joined to the electrode pad formed on the bottom of the receiving portion with a brazing material, and a film-like electrode terminal wettable with solder is formed on the surface of the mounting board. A connection structure for electric circuit devices, wherein the electrode terminal and the electrode terminal are joined by solder. 2. The mutual connection of electric circuit devices according to claim 1, wherein an opening diameter of the receiving portion is 80 to 120% and a depth thereof is 15 to 35% with respect to a diameter of the metal bump. Construction. 3. The interconnection structure for electric circuit devices according to claim 1, wherein the metal bump is covered with a Ni plating layer and further covered with an Au plating layer. 4. A gap is formed between a side wall portion of the receiving portion and the brazing material.
Alternatively, the structure for connecting the electric circuit devices to each other according to claim 2. 5. A method of connecting electric circuit devices to each other, which connects a metal bump of a ceramic package and an electrode terminal of a mounting board, wherein a receiving portion having a concave cross-sectional view is formed on a surface of a substrate, and the receiving portion is arranged at a bottom portion of the receiving portion. Using the ceramic package in which metal bumps are bonded to the formed electrode pads with a brazing material, solder balls or solder paste are formed on the film-like electrode terminals wettable with the solder formed on the surface of the mounting board. , And the metal bumps are superposed so that the tops of the metal bumps come into contact with the film-like electrode terminals.
A method for connecting electric circuit devices to each other, which comprises heating to a temperature at which a solder or a solder paste is melted and then connecting them. 6. The receiving portion having a concave shape in cross section has an opening diameter of 80 to 120% and a depth of 1 with respect to the diameter of the metal bump.
The shape is set to 5 to 35%, and the shape is set.
A method of connecting the described electric circuit devices to each other. 7. The metal bump having a surface coated with a Ni plating layer and further coated with an Au plating layer is used as the metal bump.
A method of connecting the described electric circuit devices to each other. 8. The metal bump and the film-like electrode terminal are connected to each other in a state where a gap is formed between the side wall portion of the receiving portion and the brazing material. 6. The method for connecting electrical circuit devices to each other according to item 6.