JPH08107088A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH08107088A JPH08107088A JP23994694A JP23994694A JPH08107088A JP H08107088 A JPH08107088 A JP H08107088A JP 23994694 A JP23994694 A JP 23994694A JP 23994694 A JP23994694 A JP 23994694A JP H08107088 A JPH08107088 A JP H08107088A
- Authority
- JP
- Japan
- Prior art keywords
- tape
- wafer
- ultraviolet light
- semiconductor device
- irradiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Dicing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造方法に
係り, 特に, UVテープに貼られた半導体基板をフルカッ
トし，紫外(UV)光を照射する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of fully cutting a semiconductor substrate attached to a UV tape and irradiating it with ultraviolet (UV) light.
【０００２】ウェーハプロセスの終わったウェーハは,
UVテープに貼られて個々のチップにダイシングされる。
ダイシング後, UVテープに紫外光を照射してテープの粘
着力を消滅させることにより，チップを１個ずつ取り出
している。Wafers that have undergone the wafer process are
It is attached to UV tape and diced into individual chips.
After dicing, the UV tape is irradiated with ultraviolet light to eliminate the adhesive force of the tape and the chips are taken out one by one.
【０００３】[0003]
【従来の技術】従来の紫外光照射方法は, UVテープに貼
られてウェーハ表面が上を向き, 紫外光はテープの下側
から照射されていた。2. Description of the Related Art In the conventional method of irradiating ultraviolet light, the wafer surface is attached to a UV tape so that the wafer surface faces upward, and the ultraviolet light is irradiated from the lower side of the tape.
【０００４】図５は従来例の説明図である。図におい
て， 1はUVテープ, 2はダイシングされた個々のチッ
プ, 3はUVテープを張り付けて固定するフレーム, 4は
紫外光ランプである。FIG. 5 is an explanatory view of a conventional example. In the figure, 1 is a UV tape, 2 is an individual chip that has been diced, 3 is a frame to which UV tape is attached and fixed, and 4 is an ultraviolet lamp.
【０００５】紫外光の照射により，UVテープは約80〜10
0 ℃に加熱されるため，ウェーハの重量によりUVテープ
が上向凹に撓む。このために, ウェーハの切り込み面は
閉じる方向に変形するため，チップ表面のエッジは触れ
合い, 従ってチップエッジの欠けが発生する。By irradiating with ultraviolet light, the UV tape is about 80 to 10
Since it is heated to 0 ° C, the UV tape bends upward due to the weight of the wafer. As a result, the cut surface of the wafer deforms in the closing direction, and the edges of the chip surface touch each other, resulting in chipping of the chip edge.
【０００６】[0006]
【発明が解決しようとする課題】近年， 8インチウェー
ハ, 12インチウェーハとウェーハは大口径化され，ウェ
ーハの重量が増し，紫外光の照射時にUVテープが大きく
撓みチップの表面側のエッジが触れ合って欠けることが
あり問題となっている。In recent years, 8-inch wafers, 12-inch wafers, and wafers have become larger in diameter, the weight of the wafers has increased, and the UV tape has largely deflected when irradiated with ultraviolet light, and the edges on the surface side of the chips touch each other. It is a problem because it is missing.
【０００７】本発明は個々のチップにダイシングされた
ウェーハが貼られたUVテープに紫外光を照射する際に,
チップ表面の欠けの発生を防止することを目的とする。According to the present invention, when irradiating UV light to a UV tape having a wafer diced into individual chips,
The purpose is to prevent chipping of the chip surface.
【０００８】[0008]
【課題を解決するための手段】上記課題の解決は， １）紫外光照射により粘着力が低減するUVテープ上にウ
ェーハを貼り，該ウェーハをダイシングして個々のチッ
プに分割し，該ウェーハの表面側を下に向けて該UVテー
プを保持し，該UVテープの上側より紫外光を照射する過
程を有する半導体装置の製造方法，あるいは ２）紫外光照射により粘着力が低減するUVテープ上にウ
ェーハを貼り，該ウェーハをダイシングして個々のチッ
プに分割し，該ウェーハの表面側を上に向け且つ該UVテ
ープの下に紫外光透過板を敷いて該UVテープを保持し，
該紫外光透過板の下側より紫外光を照射する過程を有す
る半導体装置の製造方法，あるいは ３）前記紫外光透過板を敷く代わりに，該UVテープより
軟化点の高いテープを該UVテープの下側に貼りつけ，該
軟化点の高いテープの下側より紫外光を照射する過程を
有する前記２記載の半導体装置の製造方法，あるいは ４）前記紫外光透過板を敷く代わりに，該UVテープより
軟化点の高いテープを該ウェーハの上側に貼りつけ，該
UVテープの下側より紫外光を照射する過程を有する前記
２記載の半導体装置の製造方法，あるいは ５）UVテープに貼られたダイシング済のウェーハを垂直
に立てた状態で, 横方向より紫外光を照射する過程を有
する半導体装置の製造方法により達成される。[Means for Solving the Problems] To solve the above problems, 1) attach a wafer on a UV tape whose adhesive strength is reduced by irradiation with ultraviolet light, dice the wafer and divide it into individual chips. A method for manufacturing a semiconductor device having a step of holding the UV tape with its front side facing downward and irradiating ultraviolet light from the upper side of the UV tape, or 2) on a UV tape whose adhesive strength is reduced by ultraviolet light irradiation. A wafer is attached, the wafer is diced to be divided into individual chips, an ultraviolet light transmitting plate is laid under the UV tape with the surface side of the wafer facing upward, and the UV tape is held,
A method for manufacturing a semiconductor device, which comprises a step of irradiating ultraviolet light from the lower side of the ultraviolet light transmitting plate, or 3) Instead of laying the ultraviolet light transmitting plate, a tape having a softening point higher than that of the UV tape is used for the UV tape. 4. The method for manufacturing a semiconductor device as described in 2 above, which comprises a step of applying ultraviolet light from the lower side of the tape having a high softening point, or 4) the UV tape instead of laying the ultraviolet light transmitting plate Attach a tape with a higher softening point to the upper side of the wafer,
2. The method for manufacturing a semiconductor device as described in 2 above, which comprises a step of irradiating UV light from below the UV tape, or 5) With the dicing wafer attached to the UV tape standing vertically, the UV light is laterally applied. And a method of manufacturing a semiconductor device having a process of irradiating with.
【０００９】[0009]
【作用】本発明では, ウェーハの表面側を下に向け，上
側より紫外光を照射するので,テープが上向凹に撓んで
も, ウェーハの切り込み面は開くのでチップのエッジが
触れ合うことはない。そのため，チップエッジの欠けは
発生しない。In the present invention, since the surface side of the wafer is directed downward and the ultraviolet light is irradiated from the upper side, even if the tape bends upward, the cut surface of the wafer opens and the edges of the chips do not touch each other. . Therefore, no chip edge chipping occurs.
【００１０】次に，紫外光照射を従来通りにテープ下側
から照射する場合には以下のようにする。 (1) UVテープの下にガラス板を敷くので, テープが撓ん
でもテープは撓まないため，チップのエッジが触れ合う
ことはない。 (2) フルカット済のウェーハが貼られたUVテープの下側
に, 熱膨張係数の小さいテープを貼りつけて紫外光を照
射することにより，紫外光照射時の熱でウェーハ表面が
凹状に撓むことはなく, チップのエッジが触れ合うこと
はない。 (3）フルカット済のウェーハが貼られたUVテープのウェ
ーハ側表面に, 熱膨張係数の小さいテープを貼りつけて
UVテープに紫外光を照射することにより，紫外光照射時
の熱でウェーハ表面が凹状に撓むことはなく, チップの
エッジが触れ合うことはない。Next, in the case of irradiating the ultraviolet light from the lower side of the tape as usual, the following is done. (1) Since a glass plate is laid under the UV tape, even if the tape bends, the tape does not bend, so the edges of the chips do not touch. (2) By irradiating UV light by attaching a tape with a small thermal expansion coefficient to the underside of the UV tape on which the full-cut wafer is pasted, the wafer surface is bent into a concave shape due to the heat during UV light irradiation. There is no chipping and the edges of the chips do not touch each other. (3) Attach a tape with a small thermal expansion coefficient to the wafer side surface of the UV tape with the fully cut wafer attached.
By irradiating the UV tape with UV light, the heat of the UV light does not cause the wafer surface to bend in a concave shape, and the edges of the chips do not touch each other.
【００１１】また，フルカット済のウェーハを垂直に立
てた状態で, 横方向より紫外光を照射することにより，
ウェーハ表面が凹状に撓むことはなく, チップのエッジ
が触れ合うことはない。Further, by irradiating ultraviolet light from the lateral direction with the fully cut wafer standing vertically,
The wafer surface does not bend in a concave shape and the chip edges do not touch.
【００１２】[0012]
【実施例】図１は本発明の実施例１の説明図である。図
において， 1はUVテープ, 2はダイシングされた個々の
チップ, 3はUVテープを張り付けて固定するフレーム,
4は紫外光ランプである。EXAMPLE 1 FIG. 1 is an explanatory diagram of Example 1 of the present invention. In the figure, 1 is a UV tape, 2 is an individual chip that has been diced, 3 is a frame to which the UV tape is attached and fixed,
4 is an ultraviolet lamp.
【００１３】この場合は, ウェーハの重量によりテープ
の撓みは従来例と反対になり，ウェーハの切り込み面は
開くため，チップ表面のエッジは触れ合うことなく, 従
ってチップの欠けは発生しない。In this case, the bending of the tape is opposite to that of the conventional example due to the weight of the wafer, and the cut surface of the wafer is opened, so that the edges of the chip surface do not touch each other, so that chipping of the chip does not occur.
【００１４】以下に，従来例と同様にUVテープの下側か
ら紫外光を照射する場合の実施例を説明する。図２は本
発明の実施例２の説明図である。An example of irradiating ultraviolet light from the lower side of the UV tape as in the conventional example will be described below. FIG. 2 is an explanatory diagram of the second embodiment of the present invention.
【００１５】この例では，UVテープの下に石英ガラスや
紫外光カットフィルタ等の紫外光透過板 5を敷いてUVテ
ープの下側から紫外光を照射することにより，UVテープ
の撓みを防止している。In this example, an ultraviolet light transmitting plate 5 such as quartz glass or an ultraviolet light cut filter is laid under the UV tape to irradiate the ultraviolet light from the lower side of the UV tape to prevent the bending of the UV tape. ing.
【００１６】図３は本発明の実施例３の説明図である。
この例では，UVテープの下側に熱膨張係数がUVテープよ
りも小さく且つ紫外光を透過するテープ 6を貼り付けて
テープの下側から紫外光を照射することにより，テープ
の撓みを防止している。FIG. 3 is an explanatory diagram of the third embodiment of the present invention.
In this example, tape 6 that has a thermal expansion coefficient smaller than that of the UV tape and transmits ultraviolet light is attached to the lower side of the UV tape, and the bending of the tape is prevented by irradiating the ultraviolet light from the lower side of the tape. ing.
【００１７】図４は本発明の実施例４の説明図である。
この例では，チップの表面に熱膨張係数がUVテープより
も小さいテープ 7を貼り付けてUVテープの下側から紫外
光を照射することにより，テープの撓みを防止してい
る。FIG. 4 is an explanatory view of the fourth embodiment of the present invention.
In this example, tape 7 with a coefficient of thermal expansion smaller than that of the UV tape is attached to the surface of the chip, and UV light is irradiated from the lower side of the UV tape to prevent the tape from bending.
【００１８】[0018]
【発明の効果】本発明によれば, ダイシングされたウェ
ーハが貼られたUVテープに紫外光を照射する際に, チッ
プ表面の欠けの発生を防止することができる。この結
果, チップの信頼性と製造歩留を向上できる。EFFECTS OF THE INVENTION According to the present invention, it is possible to prevent chipping of the chip surface when irradiating UV light onto a UV tape having a dicing wafer attached. As a result, chip reliability and manufacturing yield can be improved.
【図１】 本発明の実施例１の説明図FIG. 1 is an explanatory diagram of a first embodiment of the present invention.
【図２】 本発明の実施例２の説明図FIG. 2 is an explanatory diagram of a second embodiment of the present invention.
【図３】 本発明の実施例３の説明図FIG. 3 is an explanatory diagram of Embodiment 3 of the present invention.
【図４】 本発明の実施例４の説明図FIG. 4 is an explanatory diagram of Embodiment 4 of the present invention.
【図５】 従来例の説明図FIG. 5 is an explanatory diagram of a conventional example.
1 UVテープ 2 ダイシングされた個々のチップ 3 UVテープを張り付けて固定するフレーム 4 紫外光ランプ 5 紫外光を透過する板 6 熱膨張係数がUVテープよりも小さく且つ紫外光を透
過する粘着テープ 7 熱膨張係数がUVテープよりも小さい粘着テープ1 UV tape 2 Individual diced chips 3 Frame to which UV tape is attached and fixed 4 UV lamp 5 Plate that transmits UV light 6 Adhesive tape that has a smaller thermal expansion coefficient than UV tape and that transmits UV light 7 Heat Adhesive tape with a smaller expansion coefficient than UV tape
Claims (5)
ープ上にウェーハを貼り，該ウェーハをダイシングして
個々のチップに分割し，該ウェーハの表面側を下に向け
て該UVテープを保持し，該UVテープの上側より紫外光を
照射する過程を有することを特徴とする半導体装置の製
造方法。1. A wafer is stuck on a UV tape whose adhesiveness is reduced by irradiation with ultraviolet light, the wafer is diced to be divided into individual chips, and the UV tape is held with the surface side of the wafer facing downward. Then, a method of manufacturing a semiconductor device, which comprises the step of irradiating ultraviolet light from above the UV tape.
ープ上にウェーハを貼り，該ウェーハをダイシングして
個々のチップに分割し，該ウェーハの表面側を上に向け
且つ該UVテープの下に紫外光透過板を敷いて該UVテープ
を保持し，該紫外光透過板の下側より紫外光を照射する
過程を有することを特徴とする半導体装置の製造方法。2. A wafer is pasted on a UV tape whose adhesion is reduced by irradiation with ultraviolet light, the wafer is diced into individual chips, and the front side of the wafer is directed upward and under the UV tape. A method for manufacturing a semiconductor device, comprising: a step of laying an ultraviolet light transmitting plate on the substrate, holding the UV tape, and irradiating ultraviolet light from the lower side of the ultraviolet light transmitting plate.
テープより軟化点の高いテープを該UVテープの下側に貼
りつけ，該軟化点の高いテープの下側より紫外光を照射
する過程を有することを特徴とする請求項２記載の半導
体装置の製造方法。3. Instead of laying the ultraviolet light transmitting plate, the UV
3. The method of manufacturing a semiconductor device according to claim 2, further comprising a step of attaching a tape having a softening point higher than that of the tape to a lower side of the UV tape and irradiating ultraviolet light from a lower side of the tape having a higher softening point. Method.
テープより軟化点の高いテープを該ウェーハの上側に貼
りつけ，該UVテープの下側より紫外光を照射する過程を
有することを特徴とする請求項２記載の半導体装置の製
造方法。4. Instead of laying the ultraviolet light transmitting plate, the UV
3. The method of manufacturing a semiconductor device according to claim 2, further comprising the step of attaching a tape having a softening point higher than that of the tape to the upper side of the wafer and irradiating the UV light from the lower side of the UV tape.
ーハを垂直に立てた状態で, 横方向より紫外光を照射す
る過程を有することを特徴とする半導体装置の製造方
法。5. A method of manufacturing a semiconductor device, which comprises a step of irradiating ultraviolet light from a lateral direction in a state in which a dicing wafer attached to a UV tape is erected vertically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23994694A JPH08107088A (en) | 1994-10-04 | 1994-10-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23994694A JPH08107088A (en) | 1994-10-04 | 1994-10-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08107088A true JPH08107088A (en) | 1996-04-23 |
Family
ID=17052181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23994694A Withdrawn JPH08107088A (en) | 1994-10-04 | 1994-10-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08107088A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014452A1 (en) * | 1998-02-25 | 2000-06-28 | Seiko Epson Corporation | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
| SG100709A1 (en) * | 2000-05-31 | 2003-12-26 | Disco Corp | Semiconductor wafer assembly and machining apparatus having chuck tables for holding the same |
| JP2004281430A (en) * | 2003-03-12 | 2004-10-07 | Nitto Denko Corp | Method of irradiating ultraviolet rays and device using it |
| US7985626B2 (en) | 2004-05-10 | 2011-07-26 | Advanced Chip Engineering Technology Inc. | Manufacturing tool for wafer level package and method of placing dies |
-
1994
- 1994-10-04 JP JP23994694A patent/JPH08107088A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014452A1 (en) * | 1998-02-25 | 2000-06-28 | Seiko Epson Corporation | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
| EP1014452A4 (en) * | 1998-02-25 | 2001-11-14 | Seiko Epson Corp | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
| US6700631B1 (en) | 1998-02-25 | 2004-03-02 | Seiko Epson Corporation | Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device |
| US6885389B2 (en) | 1998-02-25 | 2005-04-26 | Seiko Epson Corporation | Method of separating thin film device, method of transferring thin film device, thin film device, active matrix substrate and liquid crystal display device |
| SG100709A1 (en) * | 2000-05-31 | 2003-12-26 | Disco Corp | Semiconductor wafer assembly and machining apparatus having chuck tables for holding the same |
| JP2004281430A (en) * | 2003-03-12 | 2004-10-07 | Nitto Denko Corp | Method of irradiating ultraviolet rays and device using it |
| JP4488686B2 (en) * | 2003-03-12 | 2010-06-23 | 日東電工株式会社 | Ultraviolet irradiation method and apparatus using the same |
| KR101011890B1 (en) * | 2003-03-12 | 2011-02-01 | 닛토덴코 가부시키가이샤 | Ultraviolet irradiating method and an apparatus using the same |
| US7985626B2 (en) | 2004-05-10 | 2011-07-26 | Advanced Chip Engineering Technology Inc. | Manufacturing tool for wafer level package and method of placing dies |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020115 |