JPH08107085A - Jig and method for measuring infrared emissivity of semiconductor wafer - Google Patents
Jig and method for measuring infrared emissivity of semiconductor waferInfo
- Publication number
- JPH08107085A JPH08107085A JP6240938A JP24093894A JPH08107085A JP H08107085 A JPH08107085 A JP H08107085A JP 6240938 A JP6240938 A JP 6240938A JP 24093894 A JP24093894 A JP 24093894A JP H08107085 A JPH08107085 A JP H08107085A
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- Prior art keywords
- measuring
- temperature
- wafer
- infrared emissivity
- jig
- Prior art date
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積装置の製造
工程でのランプアニール炉による熱処理における赤外線
放射率の測定治具及びそれを用いた測定装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jig for measuring infrared emissivity in a heat treatment by a lamp annealing furnace in a manufacturing process of a semiconductor integrated device, and a measuring device using the jig.
【０００２】[0002]
【従来の技術】従来、このような分野の技術としては、
例えば、以下に示すようなものがあった。図３はかかる
従来の赤外線放射率を測定するための測定治具の平面
図、図４は図３のＡ−Ａ線断面図、図５はそのような測
定治具を用いて赤外線放射率を測定する方法の概念図で
あり、以下に従来の赤外線放射率の測定方法を示す。2. Description of the Related Art Conventionally, techniques in such a field include:
For example, there were the following. FIG. 3 is a plan view of a conventional measuring jig for measuring the infrared emissivity, FIG. 4 is a sectional view taken along the line AA of FIG. 3, and FIG. It is a conceptual diagram of a measuring method, and the conventional measuring method of infrared emissivity is shown below.
【０００３】図３に示すように、赤外線放射率（エミッ
シビティーε）測定治具１００は、グラファイト（黒
鉛）製であり、測定するウエハのガイド１０１と中心部
の測定窓１０２と測定すべき半導体ウエハ（以下、単に
ウエハという）を固定及び測定治具より熱の伝導の促進
のための真空チャック溝１０３及び外部へ真空を導く穴
１０４で構成した測温テーブル１０５と、これを測温す
るための熱電対を収納する測温孔１０７、熱電対からの
引き出し線１０６を有する支持台１０８で構成されてい
る。As shown in FIG. 3, an infrared emissivity (emissivity ε) measuring jig 100 is made of graphite and should be measured with a guide 101 of the wafer to be measured and a measuring window 102 at the center. A semiconductor wafer (hereinafter, simply referred to as a wafer) is fixed and a temperature measuring table 105 including a vacuum chuck groove 103 for promoting heat conduction from a measuring jig and a hole 104 for guiding a vacuum to the outside, and a temperature measuring table 105. A thermometer hole 107 for accommodating a thermocouple for this purpose and a support 108 having a lead wire 106 extending from the thermocouple.
【０００４】図４に示すように、真空チャック溝１０３
は外部へ真空を導く穴１０４に接続されており、外部の
真空ポンプにより測温テーブル１０５に測温ウエハ１０
９を固定できる構造となっている。図５に示すように、
石英製のチャンバー１１０の上下には、反射鏡１１１と
ハロゲンランプ１１２で構成した加熱部と、ガス導入口
１１３及びガス排出口１１４があり、チャンバーの蓋体
１１５には測定治具が支持されており、真空を導く穴
（図示なし）に接続された真空パイプ１１６により真空
を引いている。また、測定治具１００にはウエハ１０９
の裏面が全面現れるように真空で支持されており、中央
部には赤外線放射温度計（以後、ボロメータという）１
１８が配置されている。As shown in FIG. 4, the vacuum chuck groove 103 is formed.
Is connected to a hole 104 for guiding a vacuum to the outside, and the temperature measuring wafer 105 is transferred to the temperature measuring table 105 by an external vacuum pump.
9 has a structure that can be fixed. As shown in FIG.
Above and below the quartz chamber 110, there are a heating section composed of a reflecting mirror 111 and a halogen lamp 112, a gas inlet 113 and a gas outlet 114, and a measurement jig is supported by a chamber lid 115. The vacuum is drawn by a vacuum pipe 116 connected to a hole (not shown) for guiding the vacuum. Further, the measurement jig 100 has a wafer 109
It is supported in a vacuum so that the entire back surface of it appears, and an infrared radiation thermometer (hereinafter called bolometer) 1
18 are arranged.
【０００５】ボロメータ１１８は赤外線光学系１１９と
赤外線センサ１２０及び温度表示計１２１で構成されて
おり、ウエハの実温である測温テーブル１０５の温度
は、熱電対１０６と温度表示計１１７に表示される。ボ
ロメータ１１８の温度表示である放射温度１２３は熱電
対温度１２２より通常低く、これが赤外線放射率εを表
している。The bolometer 118 is composed of an infrared optical system 119, an infrared sensor 120 and a temperature indicator 121. The temperature of the temperature measuring table 105 which is the actual temperature of the wafer is displayed on the thermocouple 106 and the temperature indicator 117. It The radiation temperature 123, which is a temperature indication on the bolometer 118, is usually lower than the thermocouple temperature 122, which represents the infrared emissivity ε.
【０００６】Ｓｉウエハの場合、赤外線放射率εは０．
７２であり、反射率＝１−ε→２８％の赤外線がＳｉウ
エハ表面で内部反射しているため、放射温度が低く表示
されるわけである。一般に、ボロメータ１１８には赤外
線放射率εの補正機能があり、この補正機能に０．７２
を設定し、実温である熱電対温度と放射温度は等しくし
ており、これを赤外線放射率測定といっている。In the case of a Si wafer, the infrared emissivity ε is 0.
Since the infrared rays having a reflectance of 1-ε → 28% are internally reflected on the surface of the Si wafer, the radiation temperature is displayed low. Generally, the bolometer 118 has a function of correcting the infrared emissivity ε, and the correction function has a function of 0.72.
Is set so that the actual temperature of the thermocouple is equal to the radiation temperature, which is called infrared emissivity measurement.
【０００７】しかし、この赤外線放射率εは固定された
定数ではなく、例えば、Ｓｉウエハ表面に成膜すると、
赤外線放射率εは膜厚に周期的に変化することが知られ
ており、熱処理ウエハを必要に応じて赤外線放射率εを
測定している。図６はＳｉウエハ表面へのシリコン酸化
膜（ＳｉＯ2 膜）と多結晶シリコン膜を形成した場合の
赤外線放射率εであり、シリコン酸化膜が厚い場合、赤
外線放射率εはほぼ１〜０．２まで変化している。そこ
で測温テーブル１０５は赤外線放射率εがほぼ１である
グラファイトが使用されている。その他の材質であると
赤外線放射率εは１より小さい値を取り、測定窓１０２
部分の測温ウエハ１０９が測温テーブル１０５より高温
化する可能性があり、汎用性を保つため、グラファイト
が使用されている。However, this infrared emissivity ε is not a fixed constant and, for example, when a film is formed on the surface of a Si wafer,
It is known that the infrared emissivity ε changes periodically with the film thickness, and the infrared emissivity ε of the heat-treated wafer is measured as necessary. FIG. 6 shows the infrared emissivity ε when the silicon oxide film (SiO 2 film) and the polycrystalline silicon film are formed on the surface of the Si wafer. When the silicon oxide film is thick, the infrared emissivity ε is approximately 1 to 0. It has changed to 2. Therefore, the temperature measuring table 105 uses graphite having an infrared emissivity ε of about 1. If other materials are used, the infrared emissivity ε takes a value smaller than 1, and the measurement window 102
There is a possibility that the temperature measurement wafer 109 of a part may become higher in temperature than the temperature measurement table 105, and graphite is used in order to maintain versatility.
【０００８】また、測定窓１０２はボロメータ１１８の
測定波長が３〜１０μｍであり、この波長ではＳｉウエ
ハが光学的に透明で測温テーブルの赤外線に妨害される
ことを防止するために設けられたものである。Further, the measurement window 102 has a measurement wavelength of the bolometer 118 of 3 to 10 μm, and is provided to prevent the Si wafer from being optically transparent at this wavelength and being prevented from being disturbed by the infrared rays of the temperature measuring table. It is a thing.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上記し
た従来の測定治具の構造または測定方法では、 （１）真空チャックによる固定であり、真空中では測温
できない。 （２）極度に低い赤外線放射率εのウエハの場合、裏面
が雰囲気ガスにより冷却され、赤外線放射率εがより低
く測定される。However, in the above-described conventional measuring jig structure or measuring method, (1) it is fixed by the vacuum chuck, and the temperature cannot be measured in vacuum. (2) In the case of a wafer having an extremely low infrared emissivity ε, the back surface is cooled by the atmosphere gas, and the infrared emissivity ε is measured to be lower.
【００１０】（３）熱処理は６００℃〜１２００℃と高
温であり、測温テーブルと支持台を別の材質にすること
は熱膨張が異なることにより困難であり、熱負荷の大き
いグラファイト一体物となり、昇温降温に時間が必要で
ある。 （４）測定治具は蓋に支持されており、蓋の気密を保つ
のが困難であることから、一般にＮＨ3 など毒ガス雰囲
気での赤外線放射率εの測定ができない。(3) The heat treatment is a high temperature of 600 ° C. to 1200 ° C. It is difficult to use different materials for the temperature measuring table and the support base due to the different thermal expansion, and it becomes a graphite integrated body with a large heat load. It takes time to raise and lower the temperature. (4) Since the measuring jig is supported by the lid and it is difficult to keep the lid airtight, it is generally not possible to measure the infrared emissivity ε in an atmosphere of poisonous gas such as NH 3 .
【００１１】など生産技術的改善では解決できない問題
があり、技術的に満足できるものは得られなかった。本
発明は、上記問題を除去し、短時間で、いかなる雰囲気
でもパーティクル発生なしで、赤外線放射率εの測定が
可能な優れた半導体ウエハの赤外線放射率の測定治具及
び測定方法を提供することを目的とする。There is a problem that cannot be solved by improving the production technology, and no technically satisfactory product was obtained. The present invention eliminates the above problems, and provides an excellent infrared emissivity measuring jig and method for a semiconductor wafer capable of measuring the infrared emissivity ε in a short time without generating particles in any atmosphere. With the goal.
【００１２】[0012]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 （１）ランプによる加熱にて熱処理を行う半導体集積回
路装置の製造装置における半導体ウエハの赤外線放射率
の測定治具において、赤外線放射温度計の測温領域より
大きい測温窓を有する本体と、この本体上に被着され、
前記測温窓の上方に同様の寸法で形成される開口を有す
る治具蓋と、前記本体に設けられる熱電対を収納する測
温孔を設けるようにしたものである。In order to achieve the above object, the present invention provides: (1) A jig for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus which performs heat treatment by heating with a lamp. In, a body having a temperature measuring window larger than the temperature measuring area of the infrared radiation thermometer, and deposited on the body,
A jig lid having an opening of the same size is provided above the temperature measurement window, and a temperature measurement hole for accommodating a thermocouple provided in the main body is provided.
【００１３】（２）上記（１）記載の半導体ウエハの赤
外線放射率の測定治具において、前記治具蓋及び本体が
ＳｉＣを被覆したグラファイト製である。 （３）上記（１）記載の半導体ウエハの赤外線放射率の
測定治具において、前記治具蓋及び本体の表面にシリコ
ン酸化膜と多結晶シリコン膜を被覆し、赤外線放射率を
１〜０．９とした多結晶シリコン製である。(2) In the jig for measuring the infrared emissivity of a semiconductor wafer as described in (1) above, the jig lid and the main body are made of graphite coated with SiC. (3) In the jig for measuring the infrared emissivity of a semiconductor wafer according to the above (1), the surface of the jig lid and the main body is covered with a silicon oxide film and a polycrystalline silicon film to have an infrared emissivity of 1 to 0. 9 made of polycrystalline silicon.
【００１４】（４）上記（１）記載の半導体ウエハの赤
外線放射率の測定治具において、前記治具蓋と本体の表
面に多結晶シリコン膜とシリコン酸化膜及び多結晶シリ
コン膜を被覆し、赤外線放射率を１〜０．９とした石英
ガラス製である。 （５）ランプによる加熱にて熱処理を行う半導体集積回
路装置の製造装置における半導体ウエハの赤外線放射率
の測定方法において、上記（１）、（２）、（３）又は
（４）記載の半導体ウエハの赤外線放射率の測定治具の
本体の測温窓を介して前記測温ウエハの裏面の温度を測
定する。(4) In the jig for measuring the infrared emissivity of a semiconductor wafer according to (1) above, the surface of the jig lid and the main body is covered with a polycrystalline silicon film, a silicon oxide film and a polycrystalline silicon film, It is made of quartz glass with an infrared emissivity of 1 to 0.9. (5) In the method for measuring the infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus that performs heat treatment by heating with a lamp, the semiconductor wafer according to (1), (2), (3) or (4) above. The temperature of the back surface of the temperature measurement wafer is measured through the temperature measurement window of the main body of the infrared emissivity measurement jig.
【００１５】（６）ランプによる加熱にて熱処理を行う
半導体集積回路装置の製造装置における半導体ウエハの
赤外線放射率の測定方法において、測定ウエハの裏面の
一部にグラファイトを被覆し、このグラファイト表面と
前記測温ウエハの裏面とを走査できる単一の赤外線放射
温度計にて、前記グラファイト表面の温度と前記測温ウ
エハの裏面の温度を測定する。(6) In the method for measuring the infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which heat treatment is performed by heating with a lamp, a part of the back surface of the measurement wafer is coated with graphite, and the graphite surface is The temperature of the graphite surface and the temperature of the back surface of the temperature measurement wafer are measured by a single infrared radiation thermometer capable of scanning the back surface of the temperature measurement wafer.
【００１６】（７）ランプによる加熱にて熱処理を行う
半導体集積回路装置の製造装置における半導体ウエハの
赤外線放射率の測定方法において、測温ウエハの裏面の
一部にグラファイトを被覆し、複数の赤外線放射温度計
にて前記グラファイトの表面の温度と前記測温ウエハの
裏面の温度を個別に測定する。 （８）ランプによる加熱にて熱処理を行う半導体集積回
路装置の製造装置における半導体ウエハの赤外線放射率
の測定方法において、測温ウエハの裏面の一部にグラフ
ァイトペーストで接着したＳｉＣ片を設け、このＳｉＣ
片表面と前記測温ウエハの裏面とを走査できる単一の赤
外線放射温度計にて、前記グラファイトの表面の温度と
前記ウエハの裏面の温度を測定する。(7) In a method for measuring the infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which heat treatment is performed by heating with a lamp, a part of the back surface of the temperature measurement wafer is coated with graphite to form a plurality of infrared rays. The temperature of the surface of the graphite and the temperature of the back surface of the temperature-measuring wafer are individually measured with a radiation thermometer. (8) In a method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which a heat treatment is performed by heating with a lamp, a SiC piece adhered with a graphite paste is provided on a part of a back surface of a temperature measurement wafer. SiC
The temperature of the front surface of the graphite and the temperature of the back surface of the wafer are measured by a single infrared radiation thermometer capable of scanning one surface and the back surface of the temperature measurement wafer.
【００１７】（９）ランプによる加熱にて熱処理を行う
半導体集積回路装置の製造装置における半導体ウエハの
赤外線放射率の測定方法において、測温ウエハの裏面の
一部にグラファイトペーストで接着したＳｉＣ片を設
け、複数の赤外線放射温度計にて前記ＳｉＣ片の表面の
温度と前記測温ウエハの裏面の温度を個別に測定する。 （１０）ランプによる加熱にて熱処理を行う半導体集積
回路装置の製造装置における半導体ウエハの赤外線放射
率の測定方法において、測温ウエハの裏面の一部にグラ
ファイトペーストで接着した赤外線放射率が１〜０．９
であるＳｉウエハ片を設け、このＳｉウエハ片の表面と
前記測温ウエハの裏面とを走査できる単一の赤外線放射
温度計にて、前記Ｓｉウエハ片の表面の温度と前記測温
ウエハの裏面の温度を測定する。(9) In the method of measuring the infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which a heat treatment is performed by heating with a lamp, a SiC piece adhered with graphite paste to a part of the back surface of the temperature measurement wafer. The temperature of the front surface of the SiC piece and the temperature of the back surface of the temperature measurement wafer are individually measured by a plurality of infrared radiation thermometers. (10) In a method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which a heat treatment is performed by heating with a lamp, the infrared emissivity that is adhered to a part of the back surface of the temperature measurement wafer with graphite paste is 1 to 1 0.9
A single infrared radiation thermometer capable of scanning the front surface of the Si wafer piece and the back surface of the temperature measuring wafer, and the temperature of the front surface of the Si wafer piece and the back surface of the temperature measuring wafer. Measure the temperature.
【００１８】（１１）ランプによる加熱にて熱処理を行
う半導体集積回路装置の製造装置における半導体ウエハ
の赤外線放射率の測定方法において、測温ウエハの裏面
の一部にグラファイトペーストで接着した赤外線放射率
が１〜０．９のＳｉウエハ片を設け、複数の赤外線放射
温度計にて前記Ｓｉウエハ片の表面の温度と前記測温ウ
エハの裏面の温度を個別に測定する。(11) In the method for measuring the infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus in which heat treatment is performed by heating with a lamp, the infrared emissivity obtained by adhering a part of the back surface of the temperature measurement wafer with graphite paste. 1 to 0.9 are provided, and the temperature of the front surface of the Si wafer piece and the temperature of the back surface of the temperature measurement wafer are individually measured by a plurality of infrared radiation thermometers.
【００１９】[0019]
【作用】本発明によれば、 （１）上記（１）又は（５）記載の半導体ウエハの赤外
線放射率の測定治具又はその赤外線放射率の測定方法に
よれば、測定ウエハを収納方式としたので真空雰囲気で
の測温が可能である。According to the present invention, (1) the measuring jig for the infrared emissivity of the semiconductor wafer or the method for measuring the infrared emissivity of the semiconductor wafer according to the above (1) or (5), the measuring wafer is stored in a storage system. As a result, it is possible to measure temperature in a vacuum atmosphere.
【００２０】また、極度に低い赤外線放射率の半導体ウ
エハの場合でも、ほぼ全面が加熱用の治具に被覆されて
おり、雰囲気ガスによる冷却効果は無視できるレベルに
することができる。更に、測定治具と支持台は別に製作
でき、熱負荷を小さくできるので、昇温降温を高レート
で実施可能である。Even in the case of a semiconductor wafer having an extremely low infrared emissivity, almost the entire surface is covered with a heating jig, and the cooling effect of the atmospheric gas can be made to a negligible level. Further, since the measuring jig and the support base can be separately manufactured and the heat load can be reduced, the temperature rising / falling can be performed at a high rate.
【００２１】また、真空パイプがないこと、小型軽量の
治具が製作可能なため、ＮＨ3 ガス雰囲気で測温でき
る。 （２）上記（２）記載の半導体ウエハの赤外線放射率の
測定治具によれば、上記（１）に加え、測定治具の表面
をＳｉＣでコートしたので、パーティクルの発生を皆無
にできる。また、ＳｉＣが耐酸化性の性質に富むので、
あらゆるガス雰囲気での測温が可能である。Further, since there is no vacuum pipe and a small and lightweight jig can be manufactured, the temperature can be measured in an NH 3 gas atmosphere. (2) According to the infrared emissivity measuring jig for a semiconductor wafer described in (2) above, in addition to (1) above, since the surface of the measuring jig is coated with SiC, generation of particles can be eliminated altogether. Moreover, since SiC is rich in oxidation resistance,
It is possible to measure temperature in any gas atmosphere.
【００２２】（３）上記（３）記載の半導体ウエハの赤
外線放射率の測定治具によれば、多結晶シリコン表面に
シリコン酸化膜と多結晶シリコン膜を生成し、かつ赤外
線放射率εがほぼ１となる積層構造としたので、上記
（１）に加え、パーティクルの発生を皆無にできる。ま
た、赤外線放射率εが１に近いウエハの測温においても
誤差を極めて小さくできる。(3) According to the infrared emissivity measuring jig for a semiconductor wafer described in (3) above, a silicon oxide film and a polycrystalline silicon film are formed on the surface of polycrystalline silicon, and the infrared emissivity ε is almost the same. Since the laminated structure of No. 1 is adopted, in addition to the above (1), generation of particles can be completely eliminated. Further, even in the temperature measurement of the wafer whose infrared emissivity ε is close to 1, the error can be made extremely small.
【００２３】（４）上記（４）記載の半導体ウエハの赤
外線放射率の測定治具によれば、上記（１）に加え、測
定治具を石英で製作したので、安価であるとともに、製
作形状の自由度が大きく、また、破損の場合の修理が可
能となった。更に、ＳｉＣより不純物濃度が低く汚染が
少ない特徴をも有する。また、赤外線放射率εをほぼ１
となる積層構造としたので、赤外線放射率εが１に近い
ウエハの測定でも誤差を小さくできる。(4) According to the infrared emissivity measuring jig for a semiconductor wafer as described in (4) above, since the measuring jig is made of quartz in addition to the above (1), the manufacturing cost is low and the manufacturing shape is low. It has a high degree of freedom and can be repaired in case of damage. Further, it has a characteristic that the impurity concentration is lower than that of SiC and the pollution is less. Also, the infrared emissivity ε is approximately 1
Since the laminated structure is such that the error can be reduced even in the measurement of a wafer having an infrared emissivity ε close to 1.
【００２４】（５）上記（６）記載の半導体ウエハの赤
外線放射率の測定方法によれば、 測温ウエハの裏面の一部に赤外線放射率εが既知で
ほぼ１のグラファイトを被覆しただけであるので、真空
中での測温が可能である。 極度に低い赤外線放射率εのウエハの場合でも、ほ
ぼ全面が被覆されておらず、雰囲気ガスによる冷却効果
は全面で発生し、測温誤差は無視できるレベルにするこ
とができる。(5) According to the method for measuring the infrared emissivity of a semiconductor wafer according to the above (6), a part of the back surface of the temperature-measuring wafer is coated with graphite having a known infrared emissivity ε of about 1 only. Therefore, it is possible to measure temperature in vacuum. Even in the case of a wafer having an extremely low infrared emissivity ε, almost the entire surface is not covered, the cooling effect by the atmospheric gas occurs on the entire surface, and the temperature measurement error can be ignored.
【００２５】 測定治具は事実上なく、支持台は別に
製作することができ、熱負荷は極めて小さくすることが
できるので、昇温降温レートは通常の熱処理での値（高
レート１００℃／秒）で実施可能である。 測定治具が事実上必要でなく、しかも小型軽量の治
具が製作可能であるためＮＨ3 ガス雰囲気で測温でき
る。Since there is virtually no measurement jig and the support base can be manufactured separately, and the heat load can be made extremely small, the temperature rising / falling rate is the value in the normal heat treatment (high rate 100 ° C./sec. ) Is possible. Since a measurement jig is practically unnecessary and a small and lightweight jig can be manufactured, the temperature can be measured in an NH 3 gas atmosphere.
【００２６】 半導体ウエハの測温において、熱電対
を外部から挿入する必要がなく、測温作業が単純であ
る。 （６）上記（７）記載の半導体ウエハの赤外線放射率の
測定方法によれば、上記（６）に加え、グラファイトの
測温と測温ウエハの裏面の測温が個別に同時に実施可能
であり、加熱用ランプの光リップル（加熱エネルギーの
時間的ムラ）に影響されなくなる。When measuring the temperature of the semiconductor wafer, it is not necessary to insert a thermocouple from the outside, and the temperature measuring operation is simple. (6) According to the method for measuring the infrared emissivity of a semiconductor wafer according to the above (7), in addition to the above (6), the temperature measurement of graphite and the temperature measurement of the back surface of the temperature measurement wafer can be individually and simultaneously performed. , It is not affected by light ripple of heating lamp (temporal unevenness of heating energy).
【００２７】（７）上記（８）及び（９）記載の半導体
ウエハの赤外線放射率の測定方法によれば、上記（５）
に加え、ＳｉＣ片をグラファイトペーストで接着したの
で、パーティクルの発生を皆無にでき、酸化雰囲気中で
も測温が可能である。 （８）上記（１０）及び（１１）記載の半導体ウエハの
赤外線放射率の測定方法によれば、上記（５）に加え、
赤外線放射率が１〜０．９であるＳｉウエハ片をグラフ
ァイトペーストで接着したので、パーティクルの発生を
皆無にでき、酸化雰囲気中でも測温が可能である。(7) According to the method for measuring the infrared emissivity of a semiconductor wafer as described in (8) and (9) above, (5) above
In addition, since the SiC pieces are bonded with the graphite paste, the generation of particles can be eliminated, and the temperature can be measured even in an oxidizing atmosphere. (8) According to the method for measuring the infrared emissivity of a semiconductor wafer according to the above (10) and (11), in addition to the above (5),
Since the Si wafer pieces having the infrared emissivity of 1 to 0.9 are bonded with the graphite paste, the generation of particles can be eliminated and the temperature can be measured even in the oxidizing atmosphere.
【００２８】[0028]
【実施例】以下、本発明の実施例について図面を参照し
ながら説明する。図１は本発明の第１実施例を示す測定
治具の構成図であり、図１（ａ）はその測温治具の上面
図、図１（ｂ）はその測定治具の一部破断側面図であ
る。図２はその測定治具を用いた赤外線放射率の測定方
法の概念図である。なお、従来例と同一部分について
は、同じ符号を付与している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram of a measuring jig showing a first embodiment of the present invention. FIG. 1 (a) is a top view of the temperature measuring jig, and FIG. 1 (b) is a partial cutaway of the measuring jig. It is a side view. FIG. 2 is a conceptual diagram of a method for measuring infrared emissivity using the measuring jig. The same parts as those in the conventional example are designated by the same reference numerals.
【００２９】図１に示すように、測定治具１０は、測温
窓１３が開口している測定治具本体１１と、開口１４を
有している治具蓋１２とで構成されており、開口寸法
は、測温エリアの倍程度で１０〜２０ｍｍφである。材
質はグラファイトであり、治具蓋１２の板厚は１〜２ｍ
ｍである。測定治具本体１１の内部は、半導体ウエハ
（測温ウエハ）１０９が収納できる大きさで、底板には
実温測定のための熱電対収納用の測温孔１５が設けられ
ている。治具蓋１２と測定治具本体１１は嵌め合い構造
とし、互いにずれない構造にしている。As shown in FIG. 1, the measuring jig 10 is composed of a measuring jig body 11 having a temperature measuring window 13 opened, and a jig lid 12 having an opening 14. The opening size is about 10 to 20 mmφ, which is about twice the temperature measurement area. The material is graphite, and the plate thickness of the jig lid 12 is 1 to 2 m.
m. The inside of the measurement jig main body 11 is large enough to accommodate a semiconductor wafer (temperature measurement wafer) 109, and the bottom plate is provided with a temperature measurement hole 15 for accommodating a thermocouple for actual temperature measurement. The jig lid 12 and the measurement jig body 11 are fitted to each other so that they do not shift from each other.
【００３０】図２に示すように、石英製のチャンバー１
１０の上下には、反射鏡１１１とハロゲンランプ１１２
で構成した加熱部と、ガス導入口１１３及びガス排出口
１１４が設けられ、チャンバーの蓋体１１５には測定治
具が支持される支持台１７が固定されている。また、測
温ウエハ１０９の裏面が測定治具１０の底板に接するよ
うに収納されている。As shown in FIG. 2, the chamber 1 made of quartz is used.
Above and below 10, there are a reflector 111 and a halogen lamp 112.
The heating unit configured as described above, a gas inlet 113 and a gas outlet 114 are provided, and a support stand 17 for supporting a measurement jig is fixed to a chamber lid 115. Further, the back surface of the temperature measurement wafer 109 is housed so as to contact the bottom plate of the measurement jig 10.
【００３１】更に、中央部には赤外線放射温度計（ボロ
メータ）１１８が配置されている。ボロメータ１１８は
赤外線光学系１１９と赤外線センサ１２０及び温度表示
計１２１で構成されており、測温ウエハ１０９の実際の
温度である測定治具１０の温度は、測温孔１５に収納さ
れる熱電対（図示なし）からの引き出し線１０６に接続
される温度表示計１１７によって表示される。ボロメー
タ１１８の温度表示計１２３に表示される放射温度は、
前記した温度表示計１１７による温度１２２より、通常
低くなり、赤外線放射率εが測定できる。Further, an infrared radiation thermometer (bolometer) 118 is arranged at the center. The bolometer 118 includes an infrared optical system 119, an infrared sensor 120, and a temperature indicator 121. The actual temperature of the temperature measuring wafer 109, that is, the temperature of the measuring jig 10, is a thermocouple stored in the temperature measuring hole 15. It is displayed by a temperature indicator 117 connected to a lead line 106 from (not shown). The radiation temperature displayed on the temperature indicator 123 of the bolometer 118 is
The temperature is usually lower than the temperature 122 measured by the temperature indicator 117, and the infrared emissivity ε can be measured.
【００３２】次に、本発明の第２実施例として、図７に
示すように、グラファイト製の測定治具本体１１と治具
蓋１２の表面に、ＣＶＤ法により、ＳｉＣ膜１６を０．
１〜１μｍ被覆させるようにしている。次いで、本発明
の第３実施例として、図８に示すように、多結晶シリコ
ン製の測定治具本体２１の表面に４５００ÅのＳｉＯ2
膜（以下、単に、シリコン酸化膜）２３を生成し、その
後、２００〜３００Åまたは４８００Åの多結晶シリコ
ン膜２４をＣＶＤ法にて生成させ、被覆するようにして
いる。同様に、多結晶シリコン製の測温蓋２２の表面に
４５００Åのシリコン酸化膜２３を生成し、その後、２
００〜３００Åまたは４８００Åの多結晶シリコン膜２
４をＣＶＤ法にて生成させ、被覆するようにしている。Next, as a second embodiment of the present invention, as shown in FIG. 7, a SiC film 16 is formed on the surfaces of the graphite measuring jig main body 11 and the jig lid 12 by the CVD method.
1 to 1 μm is coated. Next, as a third embodiment of the present invention, as shown in FIG. 8, 4500Å SiO 2 is formed on the surface of the measuring jig body 21 made of polycrystalline silicon.
A film (hereinafter simply referred to as a silicon oxide film) 23 is formed, and then a polycrystalline silicon film 24 having a thickness of 200 to 300Å or 4800Å is formed by a CVD method so as to cover the film. Similarly, a silicon oxide film 23 of 4500Å is formed on the surface of the temperature measuring lid 22 made of polycrystalline silicon, and then 2
Polycrystalline silicon film 2 of 0 to 300Å or 4800Å
4 is produced by the CVD method so as to be coated.
【００３３】次に、本発明の第４実施例として、図９に
示すように、石英製の測定治具本体３１の表面に、０．
５μｍ以上の多結晶シリコン膜３３をＣＶＤ法にて生成
し、その後、表面に４５００Åのシリコン酸化膜及び２
００〜３００Åまたは４８００Åの多結晶シリコン膜か
らなる被膜３４をＣＶＤ法にて生成させ、被覆する。同
様に、石英製の測温蓋３２の表面に、０．５μｍ以上の
多結晶シリコン膜３３をＣＶＤ法にて生成し、その表面
に４５００Åのシリコン酸化膜及び２００〜３００Åま
たは４８００Åの多結晶シリコン膜からなる被膜３４を
ＣＶＤ法にて生成させ、被覆するようにしている。Next, as a fourth embodiment of the present invention, as shown in FIG.
A polycrystalline silicon film 33 having a thickness of 5 μm or more is formed by a CVD method, and then a silicon oxide film of 4500 Å and 2
A coating 34 made of a polycrystalline silicon film having a thickness of 00 to 300Å or 4800Å is formed by a CVD method and is covered. Similarly, a polycrystalline silicon film 33 of 0.5 μm or more is formed by the CVD method on the surface of the quartz temperature measuring lid 32, and a silicon oxide film of 4500 Å and a polycrystalline silicon film of 200 to 300 Å or 4800 Å is formed on the surface. The coating film 34 made of a film is formed by the CVD method so as to cover the film.
【００３４】次に、本発明の第５実施例として、図１０
を用いて説明する。なお、従来例と同一の部分について
は、同じ番号を付して、その説明は省略する。測温ウエ
ハ１０９の裏面の一部に、グラファイトペースト「商品
名 ヒタゾルＡＢ Ｍ 日立粉末冶金（株）製」５１を
被覆させ、チャンバーの蓋体４１に固定された支持台４
２に、少なくとも３箇所に形成された石英の突起４３を
介して点接触状態で載置して石英製のチャンバー１１０
に挿入する。Next, as a fifth embodiment of the present invention, FIG.
Will be explained. The same parts as those in the conventional example are designated by the same reference numerals, and the description thereof will be omitted. A part of the back surface of the temperature measurement wafer 109 is covered with a graphite paste 51 (trade name: Hitasol AB M Hitachi Powder Metallurgy Co., Ltd.) 51, and is fixed to the chamber lid 41.
2, the quartz chamber 110 is placed in a point contact state through the quartz protrusions 43 formed at least at three positions.
To insert.
【００３５】図１０に示すように、ボロメータ５２は測
温ウエハ１０９の裏面を走査できる構造とし、グラファ
イトペースト５１の表面と測温ウエハ１０９の裏面の測
温を行い、温度表示計１２１に表示する。次に、本発明
の第６実施例として、図１１を用いて説明する。なお、
従来例と同一の部分については、同じ番号を付して、そ
の説明は省略する。As shown in FIG. 10, the bolometer 52 has a structure capable of scanning the back surface of the temperature measuring wafer 109, measures the temperature of the front surface of the graphite paste 51 and the back surface of the temperature measuring wafer 109, and displays it on the temperature indicator 121. . Next, a sixth embodiment of the present invention will be described with reference to FIG. In addition,
The same parts as those in the conventional example are designated by the same reference numerals and the description thereof will be omitted.
【００３６】図１１に示すように、測温ウエハ１０９の
裏面の一部に、グラファイトペースト「商品名 ヒタゾ
ルＡＢ Ｍ 日立粉末冶金（株）製」５１を被覆させ、
チャンバーの蓋体４１に固定された支持台４２に点接触
状態で載置して石英製のチャンバー１１０に挿入する。
そこで、ボロメータ６１は２個の赤外線センサ６２，６
３を配置し、赤外線センサ６２はグラファイトペースト
５１の測温を行い、赤外線センサ６３は測温ウエハ１０
９の裏面の測温を行い、温度表示計６４はグラファイト
ペースト５１及び温度表示計６５は測温ウエハ１０９の
温度をそれぞれ表示する。As shown in FIG. 11, a part of the back surface of the temperature measuring wafer 109 is coated with a graphite paste 51 (trade name: HITASOL AB M Hitachi Powder Metallurgy Co., Ltd.) 51.
It is mounted in a point contact state on a support table 42 fixed to a chamber lid 41 and inserted into a quartz chamber 110.
Therefore, the bolometer 61 has two infrared sensors 62, 6
3, the infrared sensor 62 measures the temperature of the graphite paste 51, and the infrared sensor 63 measures the temperature of the temperature measuring wafer 10.
The temperature of the back surface of 9 is measured, and the temperature indicator 64 displays the graphite paste 51 and the temperature indicator 65 displays the temperature of the temperature-measured wafer 109, respectively.
【００３７】次に、本発明の第７実施例として、図１２
を用いて説明する。なお、従来例と同一の部分について
は、同じ番号を付して、その説明は省略する。図１２に
示すように、測温ウエハ１０９の裏面の一部にグラファ
イトペースト「商品名 ヒタゾルＡＢ Ｍ 日立粉末冶
金（株）製」５３を被覆させ、板厚１００〜６００μｍ
のＳｉＣ片５４を接着させ、チャンバーの蓋体４１に固
定された支持台４２に点接触状態で載置して石英製のチ
ャンバー１１０に挿入する。Next, as a seventh embodiment of the present invention, FIG.
Will be explained. The same parts as those in the conventional example are designated by the same reference numerals, and the description thereof will be omitted. As shown in FIG. 12, a part of the back surface of the temperature measurement wafer 109 is covered with a graphite paste “Hitasol ABM Hitachi Powder Metallurgy Co., Ltd.” 53, which has a plate thickness of 100 to 600 μm.
The SiC piece 54 is adhered, placed on the support 42 fixed to the lid 41 of the chamber in a point contact state, and inserted into the quartz chamber 110.
【００３８】そこで、ボロメータ５２は測温ウエハ１０
９の裏面を走査できる構造とし、グラファイトペースト
５３で接着したＳｉＣ片５４の表面と測温ウエハ１０９
の裏面の測温を行う。次に、本発明の第８実施例とし
て、図１３を用いて説明する。なお、従来例と同一の部
分については、同じ番号を付して、その説明は省略す
る。Therefore, the bolometer 52 is used as the temperature measuring wafer 10.
9 has a structure capable of scanning the back surface, and the front surface of the SiC piece 54 adhered with the graphite paste 53 and the temperature measurement wafer 109.
Measure the temperature on the back side of. Next, an eighth embodiment of the present invention will be described with reference to FIG. The same parts as those in the conventional example are designated by the same reference numerals, and the description thereof will be omitted.
【００３９】図１３に示すように、測温ウエハ１０９の
裏面の一部にグラファイトペースト「商品名 ヒタゾル
ＡＢ Ｍ 日立粉末冶金（株）」５３を被覆させ、板厚
１００〜６００μｍのＳｉＣ片５４を接着させ、チャン
バーの蓋体４１に固定された支持台４２に点接触状態で
載置して石英製のチャンバー１１０に挿入する。そこ
で、ボロメータ６１は２個の赤外線センサ６２，６３を
配置し、赤外線センサ６２はグラファイトペースト５３
で接着したＳｉＣ片５４の測温を行い、赤外線センサ６
３は測温ウエハ１０９の裏面の測温を行い、温度表示計
６４はＳｉＣ片５４の温度を表示し、温度表示計６５は
測温ウエハ１０９の温度をそれぞれ表示する。As shown in FIG. 13, a part of the back surface of the temperature measuring wafer 109 is covered with graphite paste “Hitasol AB M Hitachi Powder Metallurgy Co., Ltd.” 53, and a SiC piece 54 having a plate thickness of 100 to 600 μm is coated. It is adhered and placed in a point contact state on a support table 42 fixed to a chamber lid 41 and inserted into a quartz chamber 110. Therefore, the bolometer 61 is provided with two infrared sensors 62 and 63, and the infrared sensor 62 uses the graphite paste 53.
The temperature of the SiC piece 54 adhered by
3 measures the temperature of the back surface of the temperature measuring wafer 109, the temperature indicator 64 displays the temperature of the SiC piece 54, and the temperature indicator 65 displays the temperature of the temperature measuring wafer 109.
【００４０】次に、本発明の第９実施例として、図１４
を用いて説明する。図１４に示すように、測温ウエハ１
０９の裏面の一部にグラファイトペースト「商品名 ヒ
タゾルＡＢ Ｍ 日立粉末冶金（株）」５５を被着し、
そこに赤外線放射率が１〜０．９であるＳｉウエハ片５
６を接着させる。その測温ウエハ１０９を、チャンバー
の蓋体４１に固定された支持台４２に点接触状態で載置
して石英製のチャンバー１１０に挿入する。ここで、Ｓ
ｉウエハ片５６はシリコン酸化膜を４５００Å、多結晶
シリコン膜を２００〜３００Åまたは４８００ÅＣＶＤ
法にて生成したものである。Next, as a ninth embodiment of the present invention, FIG.
Will be explained. As shown in FIG. 14, the temperature measurement wafer 1
The graphite paste "Hitasol ABM Hitachi Powdered Metals Co., Ltd." 55 is attached to a part of the back surface of 09,
Si wafer piece 5 with infrared emissivity of 1 to 0.9
Bond 6 together. The temperature measurement wafer 109 is placed on the support 42 fixed to the chamber lid 41 in a point contact state and inserted into the quartz chamber 110. Where S
The i-wafer piece 56 has a silicon oxide film of 4500Å and a polycrystalline silicon film of 200 to 300Å or 4800Å CVD.
It was generated by the method.
【００４１】そこで、ボロメータ５２は測温ウエハ１０
９の裏面を走査できる構造とし、グラファイトペースト
５５で接着したＳｉウエハ片５６の表面と測温ウエハ１
０９の裏面の測温を行い、温度表示計１２１に表示す
る。次に、本発明の第１０実施例として、図１５を用い
て説明する。図１５に示すように、測温ウエハ１０９の
裏面の一部にグラファイトペースト「商品名 ヒタゾル
ＡＢ Ｍ 日立粉末冶金（株）」５５を被着し、そこに
赤外線放射率が１〜０．９であるＳｉウエハ片５６を接
着させる。その測温ウエハ１０９をチャンバーの蓋体４
１に固定された支持台４２に点接触状態で載置して、石
英製のチャンバー１１０に挿入する。ここで、Ｓｉウエ
ハ片５６はシリコン酸化膜を４５００Å、多結晶シリコ
ン膜を２００〜３００Åまたは４８００ÅＣＶＤ法にて
生成したものである。Therefore, the bolometer 52 is the temperature measuring wafer 10.
9 has a structure capable of scanning the back surface and the front surface of the Si wafer piece 56 bonded with the graphite paste 55 and the temperature measurement wafer 1.
The temperature of the back surface of 09 is measured and displayed on the temperature indicator 121. Next, a tenth embodiment of the present invention will be described with reference to FIG. As shown in FIG. 15, a graphite paste “Hitasol ABM Hitachi Powdered Metals Co., Ltd.” 55 was applied to a part of the back surface of the temperature measurement wafer 109, and the infrared emissivity was 1 to 0.9. A Si wafer piece 56 is bonded. The temperature measurement wafer 109 is attached to the chamber lid 4.
It is placed in a point contact state on the support table 42 fixed to No. 1 and inserted into the quartz chamber 110. Here, the Si wafer piece 56 is formed by a silicon oxide film of 4500Å and a polycrystalline silicon film of 200 to 300Å or 4800Å CVD.
【００４２】そこで、ボロメータ６１は２個の赤外線セ
ンサ６２，６３を配置し、赤外線センサ６２はグラファ
イトペースト５５で接着したＳｉウエハ片５６の測温を
行い、赤外線センサ６３は測温ウエハ１０９の裏面の測
温を行い、温度表示計６４はＳｉウエハ片５６の温度を
表示し、温度表示計６５は測温ウエハ１０９の温度をそ
れぞれ表示する。Therefore, the bolometer 61 is provided with two infrared sensors 62 and 63, the infrared sensor 62 measures the temperature of the Si wafer piece 56 adhered with the graphite paste 55, and the infrared sensor 63 is the back surface of the temperature measuring wafer 109. The temperature indicator 64 displays the temperature of the Si wafer piece 56, and the temperature indicator 65 displays the temperature of the temperature-measured wafer 109.
【００４３】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００４４】[0044]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項１及び６記載の発明によれば、測定ウエハ
を収納方式としたので真空中での測温が可能である。As described in detail above, according to the present invention, the following effects can be achieved. (1) According to the first and sixth aspects of the invention, since the measurement wafer is stored, the temperature can be measured in vacuum.
【００４５】また、極度に低い赤外線放射率の半導体ウ
エハの場合でも、ほぼ全面が加熱用の治具に被覆されて
おり、雰囲気ガスによる冷却効果は無視できるレベルに
することができる。更に、測定治具と支持台は別に製作
でき、熱負荷を小さくできるので、昇温降温を高レート
で実施可能である。Further, even in the case of a semiconductor wafer having an extremely low infrared emissivity, almost the entire surface is covered with a heating jig, and the cooling effect by the atmospheric gas can be made to a negligible level. Further, since the measuring jig and the support base can be separately manufactured and the heat load can be reduced, the temperature rising / falling can be performed at a high rate.
【００４６】また、真空パイプがないこと、小型軽量の
治具が製作可能なため、ＮＨ3 ガス雰囲気で測温でき
る。 （２）請求項２記載の発明によれば、上記（１）の効果
に加え、ＳｉＣコートしたので、パーティクルの発生を
皆無にできる。また、ＳｉＣが耐酸化性の性質に富むの
で、あらゆるガス雰囲気での測温が可能である。Further, since there is no vacuum pipe and a small and lightweight jig can be manufactured, the temperature can be measured in the NH 3 gas atmosphere. (2) According to the invention of claim 2, in addition to the effect of (1) above, since SiC coating is performed, generation of particles can be completely eliminated. Further, since SiC is rich in oxidation resistance, it is possible to measure temperature in any gas atmosphere.
【００４７】（３）請求項３記載の発明によれば、多結
晶シリコン表面にシリコン酸化膜と多結晶シリコン膜を
生成し、かつ赤外線放射率εがほぼ１となる積層構造と
したので、上記（１）の効果に加え、パーティクルの発
生を皆無にできる。また、赤外線放射率εが１に近いウ
エハの測温においても誤差を極めて小さくできる。 （４）請求項４記載の発明によれば、上記（１）の効果
に加え、測定治具を石英で製作したので、安価であると
ともに、製作形状の自由度が大きく、また、破損の場合
の修理が可能となった。更に、ＳｉＣより不純物濃度が
低く汚染が少ない特徴をも有する。また、赤外線放射率
εをほぼ１となる積層構造としたので、赤外線放射率ε
が１に近いウエハの測定でも誤差を小さくできる。(3) According to the invention described in claim 3, since the silicon oxide film and the polycrystalline silicon film are formed on the surface of the polycrystalline silicon, and the infrared emissivity ε is about 1, the laminated structure is obtained. In addition to the effect of (1), generation of particles can be eliminated. Further, even in the temperature measurement of the wafer whose infrared emissivity ε is close to 1, the error can be made extremely small. (4) According to the invention of claim 4, in addition to the effect of the above (1), since the measuring jig is made of quartz, it is inexpensive, has a large degree of freedom in the manufacturing shape, and is broken. Repairs have become possible. Further, it has a characteristic that the impurity concentration is lower than that of SiC and the pollution is less. In addition, since the laminated structure has an infrared emissivity ε of approximately 1, the infrared emissivity ε
The error can be reduced even in the measurement of a wafer having a value close to 1.
【００４８】（５）請求項６記載の発明によれば、 測温ウエハの裏面の一部に赤外線放射率εが既知で
ほぼ１のグラファイトを被覆しただけであるので、真空
中での測温が可能である。 極度に低い赤外線放射率εのウエハの場合でも、ほ
ぼ全面が被覆されておらず、雰囲気ガスによる冷却効果
は全面で発生し、測温誤差は無視できるレベルにするこ
とができる。(5) According to the invention described in claim 6, since the back surface of the temperature measuring wafer is only coated with graphite having a known infrared emissivity ε of about 1, the temperature measurement in vacuum is performed. Is possible. Even in the case of a wafer having an extremely low infrared emissivity ε, almost the entire surface is not covered, the cooling effect by the atmospheric gas occurs on the entire surface, and the temperature measurement error can be ignored.
【００４９】 測定治具は事実上なく、支持台は別に
製作することができ、熱負荷は極めて小さくすることが
できるので、昇温降温レートは通常の熱処理での値（高
レート１００℃／秒）で実施可能である。 測定治具が事実上必要でなく、しかも小型軽量の治
具が製作可能であるためＮＨ3 ガス雰囲気で測温でき
る。Since there is virtually no measurement jig, the support base can be manufactured separately, and the heat load can be made extremely small. Therefore, the temperature rising / falling rate is the value in the normal heat treatment (high rate 100 ° C./sec. ) Is possible. Since a measurement jig is practically unnecessary and a small and lightweight jig can be manufactured, the temperature can be measured in an NH 3 gas atmosphere.
【００５０】 半導体ウエハの測温において、熱電対
を外部から挿入する必要がなく、測温作業が単純であ
る。 （６）請求項７記載の発明によれば、上記（５）の効果
に加え、グラファイトの測温と測温ウエハの裏面の測温
が個別に同時に実施可能であり、加熱用ランプの光リッ
プル（加熱エネルギーの時間的ムラ）に影響されなくな
る。When measuring the temperature of the semiconductor wafer, it is not necessary to insert a thermocouple from the outside, and the temperature measuring operation is simple. (6) According to the invention of claim 7, in addition to the effect of the above (5), the temperature measurement of graphite and the temperature measurement of the back surface of the temperature measurement wafer can be performed individually at the same time, and the light ripple of the heating lamp is increased. It is not affected by (temporal unevenness of heating energy).
【００５１】（７）請求項８及び９記載の発明によれ
ば、上記（５）の効果に加え、ＳｉＣ片をグラファイト
ペーストで接着したので、パーティクルの発生を皆無に
でき、酸化雰囲気中でも測温が可能である。 （８）請求項１０及び１１記載の発明によれば、上記
（５）の効果に加え、赤外線放射率が１〜０．９である
Ｓｉウエハ片をグラファイトペーストで接着したので、
パーティクルの発生を皆無にでき、酸化雰囲気中でも測
温が可能である。(7) According to the invention described in claims 8 and 9, in addition to the effect of the above (5), since the SiC pieces are adhered by the graphite paste, generation of particles can be eliminated and temperature measurement can be performed even in an oxidizing atmosphere. Is possible. (8) According to the inventions of claims 10 and 11, in addition to the effect of the above (5), Si wafer pieces having an infrared emissivity of 1 to 0.9 are bonded with a graphite paste.
Generation of particles can be eliminated and temperature can be measured even in an oxidizing atmosphere.
【図１】本発明の第１実施例を示す測定治具の構成図で
ある。FIG. 1 is a configuration diagram of a measuring jig showing a first embodiment of the present invention.
【図２】本発明の第１実施例を示す測定治具を用いた赤
外線放射率の測定方法の概念図である。FIG. 2 is a conceptual diagram of a method for measuring infrared emissivity using a measuring jig according to the first embodiment of the present invention.
【図３】従来の赤外線放射率を測定するための測定治具
の平面図である。FIG. 3 is a plan view of a conventional measuring jig for measuring infrared emissivity.
【図４】図３のＡ−Ａ線の断面図である。4 is a cross-sectional view taken along the line AA of FIG.
【図５】従来の測定治具を用いて赤外線放射率を測定す
る方法の概念図である。FIG. 5 is a conceptual diagram of a method for measuring infrared emissivity using a conventional measuring jig.
【図６】測温ウエハ上にシリコン酸化膜と多結晶シリコ
ン膜を形成した場合の、多結晶シリコン膜の膜厚と赤外
線放射率との関係を示す図である。FIG. 6 is a diagram showing a relationship between a film thickness of a polycrystalline silicon film and an infrared emissivity when a silicon oxide film and a polycrystalline silicon film are formed on a temperature measurement wafer.
【図７】本発明の第２実施例を示す測定治具の構成図で
ある。FIG. 7 is a configuration diagram of a measuring jig showing a second embodiment of the present invention.
【図８】本発明の第３実施例を示す測定治具の構成図で
ある。FIG. 8 is a configuration diagram of a measuring jig showing a third embodiment of the present invention.
【図９】本発明の第４実施例を示す測定治具の構成図で
ある。FIG. 9 is a configuration diagram of a measuring jig showing a fourth embodiment of the present invention.
【図１０】本発明の第５実施例を示す赤外線放射率の測
定方法の概念図である。FIG. 10 is a conceptual diagram of a method for measuring infrared emissivity showing a fifth embodiment of the present invention.
【図１１】本発明の第６実施例を示す赤外線放射率の測
定方法の概念図である。FIG. 11 is a conceptual diagram of a method for measuring infrared emissivity showing a sixth embodiment of the present invention.
【図１２】本発明の第７実施例を示す赤外線放射率の測
定方法の概念図である。FIG. 12 is a conceptual diagram of a method for measuring infrared emissivity showing a seventh embodiment of the present invention.
【図１３】本発明の第８実施例を示す赤外線放射率の測
定方法の概念図である。FIG. 13 is a conceptual diagram of an infrared emissivity measuring method showing an eighth embodiment of the present invention.
【図１４】本発明の第９実施例を示す赤外線放射率の測
定方法の概念図である。FIG. 14 is a conceptual diagram of a method for measuring infrared emissivity showing a ninth embodiment of the present invention.
【図１５】本発明の第１０実施例を示す赤外線放射率の
測定方法の概念図である。FIG. 15 is a conceptual diagram of a method for measuring infrared emissivity showing a tenth embodiment of the present invention.
１０ 測定治具 １１ 測定治具本体 １２ 治具蓋 １３ 測温窓 １４ 開口 １５ 測温孔 １６ ＳｉＣ膜 １７，４２ 支持台 ２１ 多結晶シリコン製の測定治具本体 ２２ 多結晶シリコン製の治具蓋 ２３，３３ シリコン酸化膜 ２４ 多結晶シリコン膜 ３１ 石英製の測定治具本体 ３２ 石英製の治具蓋 ３４ 被膜（シリコン酸化膜及び多結晶シリコン膜） ４１，１１５ チャンバーの蓋体 ５１，５３，５５ グラファイトペースト ５２，６１，１１８ 赤外線放射温度計（ボロメー
タ） ５４ ＳｉＣ片 ５６ Ｓｉウエハ片（シリコン酸化膜及び多結晶シリ
コン膜） ６２，６３ 赤外線センサ ６４，６５ 温度表示計 １０９ 半導体ウエハ（測温ウエハ） １１０ 石英製のチャンバー １１１ 反射鏡 １１２ ハロゲンランプ １１３ ガス導入口 １１４ ガス排出口 １１９ 赤外線光学系 １２０ 赤外線センサ １２１ 温度表示計10 Measuring Jig 11 Measuring Jig Main Body 12 Jig Lid 13 Temperature Measuring Window 14 Opening 15 Temperature Measuring Hole 16 SiC Film 17,42 Supporting Base 21 Polycrystalline Silicon Measuring Jig Main Body 22 Polycrystalline Silicon Jig Lid 23, 33 Silicon oxide film 24 Polycrystalline silicon film 31 Quartz measurement jig body 32 Quartz jig lid 34 Coating (silicon oxide film and polycrystalline silicon film) 41, 115 Chamber lid 51, 53, 55 Graphite paste 52,61,118 Infrared radiation thermometer (bolometer) 54 SiC piece 56 Si wafer piece (silicon oxide film and polycrystalline silicon film) 62,63 Infrared sensor 64,65 Temperature indicator 109 Semiconductor wafer (temperature measuring wafer) 110 Quartz chamber 111 Reflector 112 Halogen lamp 113 Gas inlet 114 Gas outlet 19 infrared optical system 120 infrared sensor 121 Temperature Indicator
Claims (11)
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定治具において、（ａ）赤外線放射温度計
の測温領域より大きい測温窓を有する本体と、（ｂ）該
本体上に被着され、前記測温窓の上方に同様の寸法で形
成される開口を有する治具蓋と、（ｃ）前記本体に設け
られる熱電対を収納する測温孔を有することを特徴とす
る半導体ウエハの赤外線放射率の測定治具。1. A jig for measuring an infrared emissivity of a semiconductor wafer in a manufacturing apparatus of a semiconductor integrated circuit device, which performs heat treatment by heating with a lamp, comprises: (a) a temperature measuring window larger than a temperature measuring area of an infrared radiation thermometer. A main body having: (b) a jig lid which is attached to the main body and has an opening of the same size above the temperature measuring window; and (c) a thermocouple provided in the main body. A jig for measuring the infrared emissivity of a semiconductor wafer, which has a temperature measuring hole.
射率の測定治具において、前記治具蓋及び本体がＳｉＣ
を被覆したグラファイト製であることを特徴とする半導
体ウエハの赤外線放射率の測定治具。2. A jig for measuring infrared emissivity of a semiconductor wafer according to claim 1, wherein the jig lid and the main body are made of SiC.
A jig for measuring infrared emissivity of a semiconductor wafer, which is made of graphite coated with.
射率の測定治具において、前記治具蓋及び本体の表面に
シリコン酸化膜と多結晶シリコン膜を被覆し、赤外線放
射率を１〜０．９とした多結晶シリコン製であることを
特徴とする半導体ウエハの赤外線放射率の測定治具。3. The jig for measuring infrared emissivity of a semiconductor wafer according to claim 1, wherein the surface of the jig lid and the main body are covered with a silicon oxide film and a polycrystalline silicon film, and the infrared emissivity is 1 to 0. 9. A jig for measuring the infrared emissivity of a semiconductor wafer, which is made of polycrystalline silicon.
射率の測定治具において、前記治具蓋と本体の表面に多
結晶シリコン膜と、シリコン酸化膜及び多結晶シリコン
膜を被覆し、赤外線放射率を１〜０．９とした石英ガラ
ス製であることを特徴とする半導体ウエハの赤外線放射
率の測定治具。4. The infrared wafer emissivity measuring jig for a semiconductor wafer according to claim 1, wherein the jig lid and the surface of the main body are covered with a polycrystalline silicon film and a silicon oxide film and a polycrystalline silicon film. A jig for measuring infrared emissivity of a semiconductor wafer, which is made of quartz glass having an emissivity of 1 to 0.9.
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定方法において、 請求項１、２、３又は４記載の半導体ウエハの赤外線放
射率の測定治具の本体の測温窓を介して前記測温ウエハ
の裏面の温度を測定することを特徴とする半導体ウエハ
の赤外線放射率の測定方法。5. A method for measuring an infrared emissivity of a semiconductor wafer in a manufacturing apparatus of a semiconductor integrated circuit device, wherein heat treatment is performed by heating with a lamp, wherein the infrared emissivity of the semiconductor wafer according to claim 1, 2, 3 or 4. A method for measuring the infrared emissivity of a semiconductor wafer, which comprises measuring the temperature of the back surface of the temperature-measuring wafer through a temperature-measuring window of the main body of the measuring jig.
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定方法において、 測定ウエハの裏面の一部にグラファイトを被覆し、該グ
ラファイト表面と前記測温ウエハの裏面とを走査できる
単一の赤外線放射温度計にて、前記グラファイト表面の
温度と前記測温ウエハの裏面の温度を測定することを特
徴とする半導体ウエハの赤外線放射率の測定方法。6. A method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus for performing heat treatment by heating with a lamp, wherein a part of the back surface of the measurement wafer is coated with graphite, and the graphite surface and A method for measuring the infrared emissivity of a semiconductor wafer, characterized in that the temperature of the graphite surface and the temperature of the back surface of the temperature measurement wafer are measured with a single infrared radiation thermometer capable of scanning the back surface of the temperature measurement wafer. .
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定方法において、 測温ウエハの裏面の一部にグラファイトを被覆し、複数
の赤外線放射温度計にて前記グラファイトの表面の温度
と前記測温ウエハの裏面の温度を個別に測定することを
特徴とする半導体ウエハの赤外線放射率の測定方法。7. A method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus for performing heat treatment by heating with a lamp, wherein a part of the back surface of a temperature measuring wafer is coated with graphite to emit a plurality of infrared rays. A method for measuring an infrared emissivity of a semiconductor wafer, wherein the temperature of the surface of the graphite and the temperature of the back surface of the temperature measuring wafer are individually measured by a thermometer.
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定方法において、 測温ウエハの裏面の一部にグラファイトペーストで接着
したＳｉＣ片を設け、該ＳｉＣ片表面と前記測温ウエハ
の裏面とを走査できる単一の赤外線放射温度計にて、前
記グラファイトの表面の温度と前記ウエハの裏面の温度
を測定することを特徴とする半導体ウエハの赤外線放射
率の測定方法。8. A method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus for performing heat treatment by heating with a lamp, wherein a SiC piece adhered with a graphite paste is provided on a part of a back surface of a temperature measuring wafer. A single infrared radiation thermometer capable of scanning the front surface of the SiC and the back surface of the temperature-measuring wafer, the temperature of the front surface of the graphite and the temperature of the back surface of the wafer are measured. Method of measuring infrared emissivity.
体集積回路装置の製造装置における半導体ウエハの赤外
線放射率の測定方法において、 測温ウエハの裏面の一部にグラファイトペーストで接着
したＳｉＣ片を設け、複数の赤外線放射温度計にて前記
ＳｉＣ片の表面の温度と前記測温ウエハの裏面の温度を
個別に測定することを特徴とする半導体ウエハの赤外線
放射率の測定方法。9. A method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus for performing heat treatment by heating with a lamp, wherein a SiC piece adhered with graphite paste is provided on a part of a back surface of a temperature measuring wafer. A method for measuring an infrared emissivity of a semiconductor wafer, wherein the temperature of the front surface of the SiC piece and the temperature of the back surface of the temperature measuring wafer are individually measured by a plurality of infrared radiation thermometers.
導体集積回路装置の製造装置における半導体ウエハの赤
外線放射率の測定方法において、 測温ウエハの裏面の一部にグラファイトペーストで接着
した赤外線放射率が１〜０．９であるＳｉウエハ片を設
け、該Ｓｉウエハ片の表面と前記測温ウエハの裏面とを
走査できる単一の赤外線放射温度計にて、前記Ｓｉウエ
ハ片の表面の温度と前記測温ウエハの裏面の温度を測定
することを特徴とする半導体ウエハの赤外線放射率の測
定方法。10. A method of measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus, wherein heat treatment is performed by heating with a lamp, wherein the infrared emissivity adhered to a part of the back surface of the temperature measurement wafer with graphite paste is With a single infrared radiation thermometer capable of providing a Si wafer piece of 1 to 0.9 and scanning the front surface of the Si wafer piece and the back surface of the temperature measuring wafer, the temperature of the front surface of the Si wafer piece and the A method for measuring the infrared emissivity of a semiconductor wafer, which comprises measuring the temperature of the back surface of a temperature measuring wafer.
導体集積回路装置の製造装置における半導体ウエハの赤
外線放射率の測定方法において、 測温ウエハの裏面の一部にグラファイトペーストで接着
した赤外線放射率が１〜０．９のＳｉウエハ片を設け、
複数の赤外線放射温度計にて前記Ｓｉウエハ片の表面の
温度と前記測温ウエハの裏面の温度を個別に測定するこ
とを特徴とする半導体ウエハの赤外線放射率の測定方
法。11. A method for measuring an infrared emissivity of a semiconductor wafer in a semiconductor integrated circuit device manufacturing apparatus, wherein heat treatment is performed by heating with a lamp, wherein the infrared emissivity adhered to a part of the back surface of the temperature measuring wafer with a graphite paste is used. Provide 1 to 0.9 Si wafer pieces,
A method for measuring the infrared emissivity of a semiconductor wafer, wherein the temperature of the front surface of the Si wafer piece and the temperature of the back surface of the temperature measurement wafer are individually measured with a plurality of infrared radiation thermometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24093894A JP3423436B2 (en) | 1994-10-05 | 1994-10-05 | Jig and method for measuring infrared emissivity of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24093894A JP3423436B2 (en) | 1994-10-05 | 1994-10-05 | Jig and method for measuring infrared emissivity of semiconductor wafer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002373347A Division JP3977244B2 (en) | 2002-12-25 | 2002-12-25 | Measuring method of infrared emissivity of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08107085A true JPH08107085A (en) | 1996-04-23 |
| JP3423436B2 JP3423436B2 (en) | 2003-07-07 |
Family
ID=17066884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24093894A Expired - Fee Related JP3423436B2 (en) | 1994-10-05 | 1994-10-05 | Jig and method for measuring infrared emissivity of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3423436B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072916A (en) * | 2010-10-28 | 2011-05-25 | 清华大学 | Method and device for measuring total hemispherical emissivity of non-metallic material |
| CN111725100A (en) * | 2020-06-16 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Preheating device and preheating method |
-
1994
- 1994-10-05 JP JP24093894A patent/JP3423436B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072916A (en) * | 2010-10-28 | 2011-05-25 | 清华大学 | Method and device for measuring total hemispherical emissivity of non-metallic material |
| CN111725100A (en) * | 2020-06-16 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Preheating device and preheating method |
| CN111725100B (en) * | 2020-06-16 | 2023-02-10 | 北京北方华创微电子装备有限公司 | Preheating device and preheating method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3423436B2 (en) | 2003-07-07 |
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