JPH0794778A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH0794778A JPH0794778A JP23532893A JP23532893A JPH0794778A JP H0794778 A JPH0794778 A JP H0794778A JP 23532893 A JP23532893 A JP 23532893A JP 23532893 A JP23532893 A JP 23532893A JP H0794778 A JPH0794778 A JP H0794778A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- light emitting
- current
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は発光素子に関し、特に
オプトエレクロトニクス分野の発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly to a light emitting device in the field of optoelectronics.
【０００２】[0002]
【従来の技術】従来、発光素子（ＬＥＤ）としては、裏
面に第１の電極を形成した基板上に、第１クラッド層，
活性層（発光層），第２クラッド層を順次形成し、この
上に第２の電極を形成した構成のものが知られている。
このように、ＬＥＤは２つのクラッド層間に挟まれた発
光層に電流を流して発光させる。2. Description of the Related Art Conventionally, as a light emitting device (LED), a first clad layer,
There is known a structure in which an active layer (light emitting layer) and a second clad layer are sequentially formed, and a second electrode is formed on the active layer (light emitting layer).
As described above, the LED emits a current by passing a current through the light emitting layer sandwiched between the two clad layers.
【０００３】ここで、外部に光を取り出すためには、片
側の電極（例えば第２の電極）をＬＥＤ本体より小さく
する必要がある。こうした構成をとる場合、クラッド層
は高抵抗でかつ薄膜なために、第２の電極の真下のみし
か電流が流れず、発光領域が第２の電極の真下のみしか
電流が流れず、発光領域が電極真下に限定される。従っ
て、発光層からの放射光は第２の電極と基板に吸収さ
れ、光取り出し効率が非常に低下し、最終的に得られる
発光効率が低くなる。Here, in order to extract light to the outside, the electrode on one side (for example, the second electrode) needs to be smaller than the LED body. In such a structure, since the clad layer has a high resistance and is a thin film, current flows only under the second electrode, and current flows only under the second electrode in the light emitting region. Limited to just below the electrode. Therefore, the emitted light from the light emitting layer is absorbed by the second electrode and the substrate, the light extraction efficiency is greatly reduced, and the finally obtained light emission efficiency is reduced.
【０００４】そこで、図１に示すような構成の発光素子
が提案されている（Ｈigh-efficiency ＩｎＧａＡｌＰ
／ＧａＡｓ visible light-emitting diodes，Ａppl ，
Ｐhys ．Ｌett ．58(10)，11 Ｍarch 1991 ）。図中の
１は基板である。この基板１の裏面には、第１の電極２
が設けられている。前記基板１の上には、第１クラッド
層３，発光層４，第２クラッド層５，電流拡散層６が形
成されている。この電流拡散層６上には、前記第１の電
極２と比べて小さい第２の電極７が形成されている。こ
うした構成の発光素子によれば、電流拡散層６を設ける
ことによって、電流が拡散して発光領域が広がるため、
第２の電極７に妨げられないで外に放射される光が増加
し、光取り出し効率が向上する。Therefore, a light-emitting device having a structure as shown in FIG. 1 has been proposed (High-efficiency InGaAlP).
/ GaAs visible light-emitting diodes, Appl,
Phys. Lett. 58 (10), 11 March 1991). Reference numeral 1 in the figure is a substrate. On the back surface of this substrate 1, the first electrode 2
Is provided. A first cladding layer 3, a light emitting layer 4, a second cladding layer 5, and a current spreading layer 6 are formed on the substrate 1. A second electrode 7 smaller than the first electrode 2 is formed on the current diffusion layer 6. According to the light emitting element having such a configuration, by providing the current diffusion layer 6, the current is diffused and the light emitting region is expanded.
The light emitted outside without being obstructed by the second electrode 7 increases, and the light extraction efficiency improves.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、電流拡
散層６を設けることによって電流を拡散させても、第２
の電極７直下にも電流が流れ、発光する。しかるに、こ
の部分からの発光は、第２の電極７と基板１に吸収され
て外部に取り出すことができない。However, even if the current is diffused by providing the current diffusion layer 6, the second
An electric current also flows just below the electrode 7 of, and emits light. However, the light emitted from this portion is absorbed by the second electrode 7 and the substrate 1 and cannot be taken out to the outside.
【０００６】この発明はこうした事情を考慮してなされ
たもので、発光層と電極間に電流拡散層を設け、更に前
記前記発光層と電極間に前記電流拡散層より高抵抗で小
さな面積をもつ高抵抗層を電極に対応する位置に設ける
ことにより、従来と比べて外部への光取り出し効率を高
めるとともに、電流を効率良く発光層に注入しえる発光
素子を提供することを目的とする。The present invention has been made in view of the above circumstances, and a current diffusion layer is provided between the light emitting layer and the electrode, and further has a higher resistance and a smaller area than the current diffusion layer between the light emitting layer and the electrode. It is an object of the present invention to provide a light emitting element that can improve the efficiency of extracting light to the outside as compared with the conventional case and can efficiently inject a current into the light emitting layer by providing the high resistance layer at a position corresponding to the electrode.
【０００７】[0007]
【課題を解決するための手段】この発明は、２つのクラ
ッド層に挟まれた発光層に対向して設けられた電極から
電流を注入することにより発光を行なう発光素子におい
て、前記電極の大きさを前記発光層より小さくするとと
もに、前記発光層と電極間に電流拡散層を設け、更に前
記発光層と電極間に前記電流拡散層より高抵抗で小さな
面積をもつ高抵抗層を前記電極に対応する位置に設ける
ことを特徴とする発光素子である。According to the present invention, in a light emitting element that emits light by injecting a current from an electrode provided opposite to a light emitting layer sandwiched between two cladding layers, the size of the electrode is increased. Is smaller than the light emitting layer, a current diffusion layer is provided between the light emitting layer and the electrode, and a high resistance layer having a higher resistance and a smaller area than the current diffusion layer between the light emitting layer and the electrode corresponds to the electrode. The light emitting element is provided at a position where
【０００８】[0008]
【作用】この発明の作用は、例えば図２を参照すれば、
以下の通りである。電流は第２の電極28から電流拡散層
27へ流れる。しかし、第２の電極28の下に位置する絶縁
層26により電流は周辺部に流れ、第２クラッド層25を通
り、発光層24に達するため、発光層24の周辺部のみが発
光する。そして、この発光のうち、基板21側への発光は
基板21に吸収される。しかし、第２の電極28側への発光
は該電極28下では発光しないため、電極28で吸収される
ことなく外部に取り出すことができる。つまり、従来は
外部に取り出すことができない第２の電極直下の発光に
寄与していた電流を、電極周辺部の発光に寄与させるこ
とにより、発光効率を上げることができ、外部取り出し
効率を向上できる。事実、絶縁層の有無による光出力と
電流特性を差を求めたところ、絶縁層があることによっ
て発光強度の増加が認められた。The operation of the present invention will be described with reference to FIG.
It is as follows. Current flows from the second electrode 28 to the current spreading layer
Flow to 27. However, the insulating layer 26 located under the second electrode 28 causes a current to flow to the peripheral portion, passes through the second cladding layer 25, and reaches the light emitting layer 24, so that only the peripheral portion of the light emitting layer 24 emits light. Then, of the emitted light, the emitted light to the substrate 21 side is absorbed by the substrate 21. However, since the light emitted to the second electrode 28 side does not emit below the electrode 28, it can be taken out to the outside without being absorbed by the electrode 28. That is, by making the current that has conventionally been contributing to the light emission directly below the second electrode that cannot be extracted to the outside contribute to the light emission in the peripheral portion of the electrode, the light emission efficiency can be increased and the external extraction efficiency can be improved. . In fact, when the difference between the light output and the current characteristics depending on the presence or absence of the insulating layer was obtained, it was found that the emission intensity increased due to the presence of the insulating layer.
【０００９】[0009]
【実施例】以下、この発明の一実施例に係る発光素子を
図面を参照して説明する。 （実施例１）図２を参照する。図中の21は、ｎ型のＧａ
Ａｓ基板である。この基板21の裏面には、第１の電極22
が設けられている。前記基板21の上には、ｎ型のＩｎＧ
ａＡｌＰ層（第１クラッド層）23，発光層24，及びｐ型
のＩｎＧａＡｌＰ層（第２クラッド層）25が形成されて
いる。DESCRIPTION OF THE PREFERRED EMBODIMENTS A light emitting device according to an embodiment of the present invention will be described below with reference to the drawings. Example 1 Reference is made to FIG. In the figure, 21 is an n-type Ga
It is an As substrate. On the back surface of this substrate 21, the first electrode 22
Is provided. An n-type InG is formed on the substrate 21.
An aAlP layer (first clad layer) 23, a light emitting layer 24, and a p-type InGaAlP layer (second clad layer) 25 are formed.
【００１０】前記第２クラッド層25上には、高抵抗層と
してのＳｉＯ2 からなる絶縁層26が形成されている。こ
こで、前記絶縁膜26は、後記する第２の電極と同じ大き
さで該第２の電極の真下に位置するように形成されてい
る。前記絶縁層26を含む前記第２クラッド層25上には、
電流拡散層27が形成されている。この電流拡散層27上に
は、前記第１の電極22と比べて小さい第２の電極28が形
成されている。On the second clad layer 25, an insulating layer 26 made of SiO 2 is formed as a high resistance layer. Here, the insulating film 26 is formed so as to have the same size as the second electrode described later and to be located immediately below the second electrode. On the second cladding layer 25 including the insulating layer 26,
The current spreading layer 27 is formed. A second electrode 28 smaller than the first electrode 22 is formed on the current diffusion layer 27.
【００１１】上記実施例１に係る発光素子は、第２クラ
ッド層25上にＳｉＯ2 からなる絶縁層（高抵抗層）26が
形成され、前記絶縁層26を含む前記第２クラッド層25上
には電流拡散層27が形成され、この電流拡散層27上には
前記絶縁層26と同じ大きさの第２の電極28が絶縁層26と
対応する位置に形成された構成になっている。In the light emitting device according to Example 1, the insulating layer (high resistance layer) 26 made of SiO 2 is formed on the second cladding layer 25, and the insulating layer 26 is formed on the second cladding layer 25. The current diffusion layer 27 is formed on the current diffusion layer 27, and the second electrode 28 having the same size as the insulating layer 26 is formed on the current diffusion layer 27 at a position corresponding to the insulating layer 26.
【００１２】こうした構成の発光素子の作用は、次の通
りである。電流は第２の電極28から電流拡散層27へ流れ
る。しかし、第２の電極28の下に位置する絶縁層26によ
り電流は周辺部に流れ、第２クラッド層25を通り、発光
層24に達するため、発光層24の周辺部のみが発光する。
そして、この発光のうち、基板21側への発光は基板21に
吸収される。しかし、第２の電極28側への発光は該電極
28下では発光しないため、電極28で吸収されることなく
外部に取り出すことができる。つまり、従来は外部に取
り出すことができない第２の電極直下の発光に寄与して
いた電流を、電極周辺部の発光に寄与させることによ
り、発光効率を上げることができ、外部取り出し効率を
向上できる。事実、絶縁層26の有無による光出力と電流
特性を差を求めたところ、上記絶縁層があることによっ
て発光強度の増加が認められた。The operation of the light emitting device having such a structure is as follows. Current flows from the second electrode 28 to the current spreading layer 27. However, the insulating layer 26 located under the second electrode 28 causes a current to flow to the peripheral portion, passes through the second cladding layer 25, and reaches the light emitting layer 24, so that only the peripheral portion of the light emitting layer 24 emits light.
Then, of the emitted light, the emitted light to the substrate 21 side is absorbed by the substrate 21. However, the light emitted to the second electrode 28 side is
Since it does not emit light under 28, it can be taken out without being absorbed by the electrode 28. In other words, by making the current that has conventionally been contributing to the light emission directly below the second electrode that cannot be extracted to the outside contribute to the light emission around the electrode, the emission efficiency can be increased and the external extraction efficiency can be improved. . In fact, when the difference between the light output and the current characteristic depending on the presence or absence of the insulating layer 26 was obtained, it was found that the emission intensity increased due to the presence of the insulating layer.
【００１３】なお、上記実施例１では、高抵抗層として
絶縁層を所定の位置に設けた場合について述べたが、こ
れに限らず、高ドープのｐ型ＩｎＧａＡｌＰ層を用いて
も同様の結果が得られる。In the first embodiment described above, the case where an insulating layer is provided at a predetermined position as a high resistance layer has been described, but the present invention is not limited to this, and the same result can be obtained by using a highly doped p-type InGaAlP layer. can get.
【００１４】また、上記実施例１に係る発光素子は、図
３のような構成にしても実施例１と同様な効果が期待で
きる。つまり、この発光素子は、図３に示す如く、前記
絶縁層26及び第２の電極28に対応する部分に開口部を有
する第１の電極31を基板21の裏面に設け、更に前記第１
に電極31の真下を除いて部分的に除去された電流拡散層
32を第２クラッド層25上に形成したものである。Further, even if the light emitting device according to the first embodiment is configured as shown in FIG. 3, the same effect as that of the first embodiment can be expected. That is, in this light emitting device, as shown in FIG. 3, a first electrode 31 having an opening in a portion corresponding to the insulating layer 26 and the second electrode 28 is provided on the back surface of the substrate 21, and the first electrode 31 is further provided.
Current diffusion layer partially removed except under electrode 31
32 is formed on the second cladding layer 25.
【００１５】（実施例２）図４を参照する。但し、図２
と同部材は同符号を付して説明を省略する。第２の電極
28に対応する第２クラッド層25，発光層24及び第１クラ
ッド層23は除去され、この除去部分にＭｇＯからなる絶
縁層41が設けられている。この実施例２に係る発光素子
は、図４に示すように、第２の電極28に対応する第２ク
ラッド層25，発光層24及び第１クラッド層23は除去さ
れ、この除去部分にＭｇＯからなる絶縁層41が設けられ
た構成になっている。従って、実施例２によれば、実施
例１と同様な効果が得られた。事実、上記絶縁層41の有
無による光出力と電流特性を差を求めたところ、絶縁層
があることによって発光強度の増加が認められた。な
お、上記実施例２では、絶縁層を設けるために第２の電
極に対応する第２クラッド層，発光層及び第１クラッド
層を除去した場合について述べたが、これに限らず、第
２の電極に対応する第２クラッド層のみを除去，あるい
は第２の電極に対応する第２クラッド層及び発光層のみ
を除去し、この除去部分に絶縁層を設けてもよい。(Embodiment 2) Referring to FIG. However, FIG.
The same members as and are denoted by the same reference numerals, and description thereof will be omitted. Second electrode
The second cladding layer 25, the light emitting layer 24, and the first cladding layer 23 corresponding to 28 are removed, and an insulating layer 41 made of MgO is provided in the removed portion. In the light emitting device according to the second embodiment, as shown in FIG. 4, the second clad layer 25, the light emitting layer 24, and the first clad layer 23 corresponding to the second electrode 28 are removed, and the removed portion is covered with MgO. The insulating layer 41 is formed. Therefore, according to Example 2, the same effect as that of Example 1 was obtained. In fact, when the difference between the light output and the current characteristics depending on the presence or absence of the insulating layer 41 was obtained, it was found that the emission intensity increased due to the presence of the insulating layer. Although the second embodiment has described the case where the second clad layer, the light emitting layer, and the first clad layer corresponding to the second electrode are removed to provide the insulating layer, the present invention is not limited to this, and the second clad layer is not limited thereto. Only the second clad layer corresponding to the electrode may be removed, or only the second clad layer and the light emitting layer corresponding to the second electrode may be removed, and an insulating layer may be provided in this removed portion.
【００１６】（実施例３）図５を参照する。但し、図２
と同部材は同符号を付して説明を省略する。図中の51
は、第２クラッド層25に形成され、該クラッド層25の中
心部に対応する部分が開口したＳｉＯ2 からなる絶縁層
である。この絶縁層51上には、電流拡散層27を介して前
記絶縁層51の形状に対応した第２の電極52が形成されて
いる。(Embodiment 3) Referring to FIG. However, FIG.
The same members as and are denoted by the same reference numerals, and description thereof will be omitted. 51 in the figure
Is an insulating layer formed on the second cladding layer 25 and made of SiO 2 having an opening at a portion corresponding to the central portion of the cladding layer 25. A second electrode 52 corresponding to the shape of the insulating layer 51 is formed on the insulating layer 51 via the current diffusion layer 27.
【００１７】このように、実施例３に係る発光素子は、
図５に示すように、第２クラッド層25の中心部に対応す
る部分が開口したＳｉＯ2 からなる絶縁層51と、この絶
縁層51上に電流拡散層27を介して形成され，前記絶縁層
51の形状に対応した第２の電極52を備えた構成となって
いる。従って、実施例１と同様な効果が得られた。事
実、上記絶縁層51の有無による光出力と電流特性を差を
求めたところ、絶縁層があることによって発光強度の増
加が認められた。As described above, the light emitting device according to the third embodiment is
As shown in FIG. 5, an insulating layer 51 made of SiO 2 having an opening at a portion corresponding to the center of the second cladding layer 25, and the insulating layer 51 formed on the insulating layer 51 via a current diffusion layer 27.
The configuration is such that a second electrode 52 corresponding to the shape of 51 is provided. Therefore, the same effect as in Example 1 was obtained. In fact, when the difference between the light output and the current characteristics depending on the presence or absence of the insulating layer 51 was obtained, it was found that the emission intensity increased due to the presence of the insulating layer.
【００１８】[0018]
【発明の効果】以上詳述したようにこの発明によれば、
発光層と電極間に電流拡散層を設け、更に前記前記発光
層と電極間に前記電流拡散層より高抵抗で小さな面積を
もつ高抵抗層を電極に対応する位置に設けることによ
り、従来と比べて外部への光取り出し効率を高めるとと
もに、電流を効率良く発光層に注入しえる発光素子を提
供できる。As described above in detail, according to the present invention,
By providing a current diffusion layer between the light emitting layer and the electrode and further providing a high resistance layer having a higher resistance and a smaller area than the current diffusion layer between the light emitting layer and the electrode at a position corresponding to the electrode, it is possible to compare with the conventional one. As a result, it is possible to provide a light emitting element that can improve the efficiency of extracting light to the outside and efficiently inject current into the light emitting layer.
【図１】従来の発光素子の断面図。FIG. 1 is a cross-sectional view of a conventional light emitting device.
【図２】この発明の実施例１に係る発光素子の断面図。FIG. 2 is a sectional view of a light emitting device according to a first embodiment of the invention.
【図３】図２の発光素子の変形例に係る発光素子の断面
図。3 is a cross-sectional view of a light emitting device according to a modification of the light emitting device of FIG.
【図４】この発明の実施例２に係る発光素子の断面図。FIG. 4 is a sectional view of a light emitting device according to a second embodiment of the invention.
【図５】この発明の実施例３に係る発光素子の断面図。FIG. 5 is a sectional view of a light emitting device according to a third embodiment of the invention.
21…ＧａＡｓ基板、 22，31…第１の電極、 23…
第１クラッド層、24…発光層、 25…第２クラ
ッド層、 26，41，51…絶縁層、27，32…電流拡散
層、 28，52…第２の電極。21 ... GaAs substrate, 22, 31 ... First electrode, 23 ...
First clad layer, 24 ... Light emitting layer, 25 ... Second clad layer, 26, 41, 51 ... Insulating layer, 27, 32 ... Current spreading layer, 28, 52 ... Second electrode.
Claims (1)
向して設けられた電極から電流を注入することにより発
光を行なう発光素子において、 前記電極の大きさを前記発光層より小さくするととも
に、前記発光層と電極間に電流拡散層を設け、更に前記
発光層と電極間に前記電流拡散層より高抵抗で小さな面
積をもつ高抵抗層を前記電極に対応する位置に設けるこ
とを特徴とする発光素子。1. A light emitting device that emits light by injecting a current from an electrode provided opposite to a light emitting layer sandwiched between two clad layers, wherein the size of the electrode is smaller than that of the light emitting layer. A current spreading layer is provided between the light emitting layer and the electrode, and a high resistance layer having a higher resistance and a smaller area than the current spreading layer is provided between the light emitting layer and the electrode at a position corresponding to the electrode. Light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23532893A JPH0794778A (en) | 1993-09-22 | 1993-09-22 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23532893A JPH0794778A (en) | 1993-09-22 | 1993-09-22 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0794778A true JPH0794778A (en) | 1995-04-07 |
Family
ID=16984484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23532893A Withdrawn JPH0794778A (en) | 1993-09-22 | 1993-09-22 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0794778A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472687B1 (en) * | 1998-09-09 | 2002-10-29 | Yu-Shan Wu | Light emitting diode with high luminance and method therefor |
| JP2010520640A (en) * | 2007-03-08 | 2010-06-10 | クリー インコーポレイテッド | LIGHT EMITTING DEVICE WITH CURRENT REDUCING STRUCTURE AND METHOD FOR FORMING LIGHT EMITTING DEVICE WITH CURRENT REDUCING STRUCTURE |
| JP2012054570A (en) * | 2004-06-30 | 2012-03-15 | Cree Inc | Light-emitting device with current inhibition structure and method for manufacturing the same |
| US8772792B2 (en) | 2005-01-24 | 2014-07-08 | Cree, Inc. | LED with surface roughening |
-
1993
- 1993-09-22 JP JP23532893A patent/JPH0794778A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472687B1 (en) * | 1998-09-09 | 2002-10-29 | Yu-Shan Wu | Light emitting diode with high luminance and method therefor |
| JP2012054570A (en) * | 2004-06-30 | 2012-03-15 | Cree Inc | Light-emitting device with current inhibition structure and method for manufacturing the same |
| US8772792B2 (en) | 2005-01-24 | 2014-07-08 | Cree, Inc. | LED with surface roughening |
| JP2010520640A (en) * | 2007-03-08 | 2010-06-10 | クリー インコーポレイテッド | LIGHT EMITTING DEVICE WITH CURRENT REDUCING STRUCTURE AND METHOD FOR FORMING LIGHT EMITTING DEVICE WITH CURRENT REDUCING STRUCTURE |
| CN105098012A (en) * | 2007-03-08 | 2015-11-25 | 克利公司 | Light emitting devices and methods of forming light emitting devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001128 |