JPH0786387A - Wafer box - Google Patents

Abstract

PURPOSE:To enable HF gas generated in a wafer box to be effectively discharged out through a simple means by a method wherein a vent hole is bored in the box at a prescribed position, and an inner atmosphere of the box is set equal to an outer atmosphere. CONSTITUTION:A wafer box 1 is composed of a lower box 1A and an upper box 1B, and vent holes with meshes are provided to the boxes 1A and 1B at prescribed positions respectively. The vent hole is lengthwise and crosswise demarcated into small squares by meshes, and the small squares are so arranged as to connect their diagonal lines together. As the vent holes 2 with meshes are provided to the box 1, an atmosphere is not confined inside the box 1, and an inner atmosphere of the box 1 is set equal to an outside atmosphere, whereby HF gas generated in the wafer box 1 can be effectively discharged out, and Si wafers can be effectively protected against clouding and corrosion caused by HF gas.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a wafer box,
In particular, the present invention can be applied to those that store and temporarily store wafers during semiconductor manufacturing.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, a Si (silicon) wafer that has been subjected to a predetermined process is held in a PFA (perfluoroalkoxy) carrier to be a wafer box while waiting for the next process. It is designed to be stored. The polymer forming this PFA carrier is widely used in products having complicated shapes because it is a mixture-free polymer, is chemically inert, has excellent corrosion resistance and heat resistance, and has good moldability.

[0003]

However, as a problem in using the PFA carrier, a chemical carrier (chem) in a wet process in a semiconductor manufacturing process is used.
The wafer is fogged due to ical carryover, but there is a problem that the wafer is fogged even when the wet process is not used.

In particular, when the production line is stopped and the storage time in the wafer box extends for 1 to 2 days, F ⁺ from the PFA carrier and H ^{+ of} water can be used ^.
Yotsute HF gas is generated, which is generating a clouding cod corrosion on S _i wafer. When such an abnormality occurs, there is a risk that the semiconductor device process is adversely affected and the yield is reduced.

Actually, the generation of HF gas from the PFA carrier is

[Chemical 1] As shown in Fig. 5, the perfluoroalkyl vinyl ether end group is rearranged, and the acid fluoride (-C
OF) reacts with water (water in the air), etc., resulting in HF
This produces gas. As described above, the cause of generation of HF gas from PFA is due to the structural change of the unterminated group.
As long as PFA having an unterminated group that generates F gas is used, it is impossible to suppress the generation of HF gas by the molding technique.

Therefore, in order to solve the problem, it is known that cleaning the PFA carrier is effective. As a cleaning method, after treating with DI water (pure water) at 90 to 100 ° C. for 30 minutes,
There is a method of baking at 150 ° C for 30 minutes. However this is particularly effective in the chemical Kiyari over over, in order to eliminate corrosion of S _i wafer by fluorine elution eventually must stop fluorine elution from fluorine polymer resin, yet is as a solution It was insufficient.

Therefore, instead of the PFA carrier, P
And P (polypropylene) manufactured by carrier, by using a conductive carrier of carbon input, it is conceivable to prevent fogging and corrosion of S _i wafer, PP manufactured carrier has a problem in strength and workability PFA carrier isomorphic However, it was difficult to realize any of the conductive carriers containing carbon due to the problem of contamination.

The present invention has been made in consideration of the above points, and it is an object of the present invention to propose a wafer box having a simple structure in which a wafer housed therein is not clouded or corroded by HF gas.

[0009]

In order to solve such a problem, according to the present invention, in a wafer box 1 for storing and temporarily storing wafers during semiconductor manufacturing, a vent hole 2 is formed at a predetermined position of a housing. The atmosphere inside the housing was made equal to the atmosphere outside the housing.

Further, in the present invention, the vent holes 2 have a mesh shape, and a plurality of vent holes 2 are arranged in the upper box portion 1B and / or the lower box portion 1A of the housing. Further, in the present invention, a reinforcing beam is arranged at a predetermined mesh-shaped portion of the vent hole 2.

[0011]

The vent hole 2 is formed at a predetermined position of the housing so that the atmosphere inside the housing is equal to the atmosphere outside the housing, so that the HF gas generated inside the housing can be effectively used. Therefore, it is possible to prevent clouding and corrosion of the wafer caused by the HF gas.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

[0013] In this embodiment, by leaving open the lid of Uehabotsukusu, by utilizing the fact that prevented occurs cloudy or corrosion S _i wafer, instead of removing the lid of Uehabotsukusu, itself Uehabotsukusu The principle is that the same effect can be obtained by adding meshes in points.

That is, in FIG. 1, reference numeral 1 denotes a wafer box according to the present invention as a whole, and vent holes 2 having mesh points are formed at predetermined positions on the lower box portion 1A and the upper box portion 1B. . In the case of this embodiment, as shown in FIG. 2, the mesh is divided into a plurality of small squares by dividing the vent hole portion 2 vertically and horizontally, and is also selected so as to connect diagonal lines within each small square. .

Furthermore the ventilation holes 2 in addition to the mesh screen shaped beam portion 2A is formed in a predetermined position, thereby maintaining the strength of the Uehabotsukusu 1 as a whole, when accommodating the S _i wafer therein In addition to effectively protecting it, it has strength durability even when used in the manufacture of _Si wafers and when it is regularly cleaned. Also by forming the ventilation holes 2 in the corner portion of Uehabotsukusu 1, it is configured so as to be able to effectively prevent Pateikuru adhesion to S _i wafer when accommodating the S _i wafer.

According to the above-mentioned structure, since the mesh-shaped vent hole portion 2 is provided in a part of the wafer box 1, the atmosphere in the wafer box 1 can be made the same as that of the outside without closing the atmosphere. can effectively prevent fogging and corrosion of S _i wafer occurring Te cowpea the generation of HF gas in Do configuration.

In the above-mentioned embodiment, the vent hole is divided into a plurality of small squares in the vertical and horizontal directions and divided into a plurality of small squares, and the mesh shape is selected so that diagonal lines are connected within each small square. The mesh shape of the portion is not limited to this, and various shapes such as those shown in FIGS. 3 (A) to 3 (C) may be selected, and the position of the vent hole is also at the corner of the wafer box. Not limited to this, it may be selected at various positions.

[0018]

As described above, according to the present invention, a ventilation hole is formed at a predetermined position of the housing, and the atmosphere inside the housing is made equal to the atmosphere outside the housing. It is possible to realize a wafer box in which the HF gas generated inside can be effectively discharged, and thus it is possible to prevent clouding and corrosion of the wafer caused by the HF gas.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an embodiment of a wafer box according to the present invention.

FIG. 2 is a schematic diagram for explaining a mesh shape of a vent hole portion of a wafer box.

FIG. 3 is a schematic diagram showing another embodiment of the mesh shape of the vent holes.

[Explanation of symbols]

 1 ... Wafer box, 2 ... Vent hole.

Claims (3)

[Claims] 1. In a wafer box for storing and temporarily storing wafers during semiconductor manufacturing, a ventilation hole is formed at a predetermined position of the housing so that the atmosphere inside the housing is equal to the atmosphere outside the housing. Wafer box characterized by 2. The wafer box according to claim 1, wherein the vent holes have a mesh shape and a plurality of vent holes are arranged in the upper box part and / or the lower box part of the housing. 3. The wafer box according to claim 2, wherein a reinforcing beam is arranged at a predetermined mesh-shaped portion of the vent hole.