JPH0786249A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH0786249A JPH0786249A JP5231268A JP23126893A JPH0786249A JP H0786249 A JPH0786249 A JP H0786249A JP 5231268 A JP5231268 A JP 5231268A JP 23126893 A JP23126893 A JP 23126893A JP H0786249 A JPH0786249 A JP H0786249A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- dry etching
- etching method
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はドライエッチング方法に
係り、特に半導体製造工程のアルミニウム合金及びアル
ミニウム合金膜と他の材料とからなる多層膜の微細加工
技術に好適なドライエッチング方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching method, and more particularly to a dry etching method suitable for a fine processing technique of an aluminum alloy and a multilayer film made of an aluminum alloy film and another material in a semiconductor manufacturing process. .
【０００２】[0002]
【従来の技術】従来の方法は、例えば特開平２−７１５
１９号公報に記載のようにアルミニウム，アルミニウム
合金等のエッチングに用いられるガスとして、ＢＣｌ3
＋Ｃｌ2，ＢＣｌ3＋Ｃｌ2＋Ｎ2が知られている。2. Description of the Related Art A conventional method is disclosed in, for example, Japanese Patent Laid-Open No. 2-715.
As described in Japanese Patent Laid-Open No. 19 as a gas used for etching aluminum, aluminum alloys, etc., BCl 3
+ Cl 2 , BCl 3 + Cl 2 + N 2 are known.
【０００３】ＢＣｌ3＋Ｃｌ2の混合ガスはエッチング速
度を向上させるために用いられ、ＢＣｌ3＋Ｃｌ2＋Ｎ2
の混合ガスはさらに異方性を向上させるために用いられ
ていた。[0003] mixed gas of BCl 3 + Cl 2 is used to improve the etching rate, BCl 3 + Cl 2 + N 2
The mixed gas of was used to further improve the anisotropy.
【０００４】[0004]
【発明が解決しようとする課題】上記従来技術は、アル
ミニウム系膜は塩素ラジカルとの化学反応によってエッ
チングされるため、異方性形状を得るために側壁保護成
分としてマスク材からの反応生成物，及びアルミニウム
系膜そのものからの反応生成物を利用する形となってい
た。このため、デバイスの高集積化に伴い微細化が進ん
でくるとエッチングされる部分に供給される側壁保護成
分が不足し異方性形状の確保が困難となり、一方、マス
ク材は薄くなる方向に有るため、エッチング工程では異
方性形状を維持しながらマスク材のエッチング速度を抑
制し、対マスク材選択比を向上しなければならないとい
う問題があった。従来技術を用いてデバイスの微細化に
対応しようとすると、図４に示すようにサイドエッチン
グが無く異方性形状を得るにはイオンエネルギーの増大
によるスパッタ効果によりマスク材からの反応生成物を
増加させる方法がある。しかしながらアルミニウム合金
膜エッチング速度とマスク材エッチング速度の比（以下
選択比とする）が低下し前述の要請に相反するという問
題があった。In the above-mentioned prior art, since the aluminum-based film is etched by a chemical reaction with chlorine radicals, a reaction product from a mask material is used as a sidewall protection component to obtain an anisotropic shape. And the reaction product from the aluminum-based film itself was used. For this reason, as the device becomes highly integrated and miniaturization progresses, it becomes difficult to secure an anisotropic shape because the sidewall protection component supplied to the etched portion becomes insufficient, while the mask material tends to become thinner. Therefore, in the etching process, there is a problem that the etching rate of the mask material must be suppressed while maintaining the anisotropic shape, and the selectivity ratio to the mask material must be improved. When it is attempted to cope with device miniaturization using the conventional technology, as shown in FIG. 4, in order to obtain an anisotropic shape without side etching, reaction products from the mask material increase due to the sputtering effect due to increase in ion energy. There is a way to do it. However, there has been a problem that the ratio of the etching rate of the aluminum alloy film and the etching rate of the mask material (hereinafter referred to as the selection ratio) is lowered, which conflicts with the above requirement.
【０００５】本発明の目的は、アルミニウム系膜のエッ
チングにおいて、微細加工性及び高選択性をあわせもっ
たエッチングを行うことができるドライエッチング方法
を提供することにある。An object of the present invention is to provide a dry etching method capable of performing etching having both fine workability and high selectivity in etching an aluminum film.
【０００６】[0006]
【課題を解決するための手段】本発明者等は、鋭意実験
を重ね、その結果、従来のハロゲン系ガスにＣＨ2Ｆ2ガ
スを混合することにより、図３に示すように、サイドエ
ッチングなく、かつ選択比の低下もないエッチングが行
えることを見出した。Means for Solving the Problems The inventors of the present invention have conducted earnest experiments, and as a result, by mixing CH 2 F 2 gas with a conventional halogen-based gas, as shown in FIG. It was also found that etching can be performed without lowering the selection ratio.
【０００７】上記目的は、アルミニウム系膜を含む膜構
造のウエハをハロゲン系ガスと塩素を含まないフロン系
ガスとの混合ガスのプラズマによりエッチング処理する
ことにより達成される。The above object is achieved by etching a wafer having a film structure including an aluminum-based film with plasma of a mixed gas of a halogen-based gas and a chlorofluorocarbon-free gas.
【０００８】また、上記目的は、高周波電力の印加によ
りバイアス電圧を生じさせウエハへのプラズマ中のイオ
ンの入射エネルギーを制御可能な試料台にアルミニウム
系膜を含む膜構造のウエハを配置し、ハロゲン系ガスと
塩素を含まないフロン系ガスとの混合ガスをマイクロ波
電界と磁界との作用を用いて減圧下でプラズマ化し、該
プラズマによってウエハを処理することにより、達成さ
れる。Further, the above-mentioned object is to arrange a wafer having a film structure including an aluminum-based film on a sample stage capable of generating a bias voltage by applying high-frequency power and controlling incident energy of ions in plasma on the wafer, This is achieved by converting a mixed gas of a system gas and a CFC-free gas containing chlorine into plasma under a reduced pressure by using the action of a microwave electric field and a magnetic field, and processing a wafer with the plasma.
【０００９】[0009]
【作用】本発明の作用を以下に示す。ハロゲン系ガスに
よりアルミニウム系材料をエッチングし、また塩素を含
まないフロン系ガスによりアルミニウム側壁保護膜の形
成を行う。従来のハロゲン系ガスによるエッチングでは
異方性形状を得るために側壁保護成分としてマスク材か
らの反応生成物、及びアルミニウム系膜そのものからの
反応生成物を利用していたが、微細化が進んでくるとこ
れらの側壁保護成分が供給不足となる。側壁保護成分を
増加させる手段として、マスク材のエッチング速度を増
大し、マスク材からの反応生成物を増やすことにより異
方性形状を確保することはできるが、一方ではマスク材
のパターニングを行なう工程では微細化が進むにつれて
マスク材膜厚は薄くなる方向に有り前述の要請と相反す
る。本発明では塩素を含まないフロン系ガスにより側壁
保護膜形成成分を供給することによりアルミニウム系材
料の膜をパターン密度や寸法等に関係なく好適なエッチ
ング処理することができる。The function of the present invention will be described below. The aluminum-based material is etched with a halogen-based gas, and the aluminum sidewall protection film is formed with a fluorocarbon-free gas. In the conventional etching with halogen-based gas, the reaction product from the mask material and the reaction product from the aluminum-based film itself were used as the sidewall protection component in order to obtain the anisotropic shape. However, the supply of these side wall protective components becomes insufficient. As a means for increasing the sidewall protection component, the anisotropic shape can be secured by increasing the etching rate of the mask material and increasing the reaction products from the mask material, but on the other hand, the step of patterning the mask material. Then, as the miniaturization progresses, the film thickness of the mask material tends to decrease, which conflicts with the above-mentioned demand. In the present invention, by supplying the side wall protective film forming component with the CFC-free gas which does not contain chlorine, the film of the aluminum-based material can be subjected to a suitable etching treatment regardless of the pattern density, size, etc.
【００１０】[0010]
【実施例】以下、本発明の一実施例を図１から図３によ
り説明する。図１は本発明によりエッチング処理された
被エッチング膜が構成されるウエハの断面状態を示す一
実施例であり、シリコン基板４上に絶縁膜である下地酸
化膜３（例えば、ＳｉＯ2膜）を形成し、その上にアル
ミニウム系材料で成る被エッチング膜、この場合、例え
ば、Ａｌ−Ｓｉ−Ｃｕで成るアルミニウム合金膜２を形
成し、その上にスペースサイズが異なる間隔（Ｗ１，Ｗ
２）でパターニングされたマスク１を形成した構造とな
っており、アルミニウム合金膜２がマスク１に沿ってエ
ッチングされた状態を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is an embodiment showing a cross-sectional state of a wafer in which a film to be etched processed by the present invention is formed. A base oxide film 3 (for example, a SiO 2 film) which is an insulating film is formed on a silicon substrate 4. An etching target film made of an aluminum-based material, in this case, an aluminum alloy film 2 made of, for example, Al—Si—Cu, is formed thereon, and spaces (W1, W1) having different space sizes are formed thereon.
The structure is such that the mask 1 patterned in 2) is formed and the aluminum alloy film 2 is etched along the mask 1.
【００１１】図１に示した被エッチング材であるウエハ
のエッチング処理は、図２に示すような、この場合、マ
イクロ波電界と磁界との作用を用いてエッチングガスを
プラズマ化するマイクロ波エッチング装置を用いて行う
ことができる。装置構成を簡単に説明すると、処理室１
０の上部には石英製の放電管１４が設けてあり、真空処
理室を形成している。処理室１０には真空処理室内にエ
ッチング用ガスを供給するガス供給源（図示省略）につ
ながるガス供給口１５が設けてあり、また真空排気装置
（図示省略）につながる排気口１６が設けてある。処理
室１０には被エッチング材であるウエハ１３を配置する
試料台１１が設けてある。試料台１１には高周波電源１
２が接続してあり、試料台１１に高周波電力を印加可能
になっている。放電管１４の外側には放電管１４を囲ん
で導波管１７が設けてあり、さらにその外側には放電管
１４内に磁界を発生させるソレノコイドコイル１９が設
けてある。導波管１７の端部にはマイクロ波を発振する
マグネトロン１８が設けてある。The etching process for the wafer as the material to be etched shown in FIG. 1 is as shown in FIG. 2. In this case, a microwave etching apparatus for converting the etching gas into plasma using the action of the microwave electric field and magnetic field is used. Can be done using. To briefly explain the apparatus configuration, the processing chamber 1
A quartz discharge tube 14 is provided on the upper part of 0 to form a vacuum processing chamber. The processing chamber 10 is provided with a gas supply port 15 connected to a gas supply source (not shown) for supplying an etching gas into the vacuum processing chamber, and an exhaust port 16 connected to a vacuum exhaust device (not shown). . The processing chamber 10 is provided with a sample table 11 on which a wafer 13, which is a material to be etched, is placed. High-frequency power source 1 on the sample table 11
2 is connected, and high frequency power can be applied to the sample table 11. A waveguide 17 is provided outside the discharge tube 14 so as to surround the discharge tube 14, and a sorenocoid coil 19 that generates a magnetic field inside the discharge tube 14 is provided outside the waveguide 17. A magnetron 18 that oscillates microwaves is provided at the end of the waveguide 17.
【００１２】このような構成による装置ではガス供給口
１５から真空処理室内にエッチング用処理ガスを供給す
るとともに真空処理室内を所定の圧力に減圧，排気し、
導波管１７によってマグネトロン１８からのマイクロ波
を放電管１０内に導入するとともにソレノイドコイル１
９によって磁界を形成し、マイクロ波の電界とソレノイ
ドコイル１９による磁界との作用によって放電管１４内
の処理ガスをプラズマ化する。さらに高周波電源１２に
よって試料台１１に高周波電力を印加し、バイアス電圧
を生じさせ、プラズマ中のイオンをウエハ１３側に引き
込み異方性エッチングを行わせるようにしている。In the apparatus having such a structure, the processing gas for etching is supplied from the gas supply port 15 into the vacuum processing chamber, and the vacuum processing chamber is depressurized and exhausted to a predetermined pressure.
The microwave from the magnetron 18 is introduced into the discharge tube 10 by the waveguide 17 and the solenoid coil 1
A magnetic field is formed by 9 and the processing gas in the discharge tube 14 is turned into plasma by the action of the electric field of the microwave and the magnetic field of the solenoid coil 19. Further, high frequency power is applied to the sample stage 11 by the high frequency power source 12 to generate a bias voltage, and ions in the plasma are drawn to the wafer 13 side to perform anisotropic etching.
【００１３】図２に示す装置を用い、図１に示すアルミ
ニウム合金のエッチングを行なったとき、エッチング用
の処理ガスとしてＢＣｌ3，Ｃｌ2にＣＨ2Ｆ2を加えてい
くと図３のような特性が得られた。即ち、ＢＣｌ3とＣ
ｌ2との混合ガスから成る条件においては側壁保護成分
の不足によりアルミニウム合金側壁にサイドエッチング
を生じるがＣＨ2Ｆ2ガスを混合すると添加量３％程度で
異方性形状を得ることができた。また、このときマスク
材との選択比はほぼ一定であった。このようにエッチン
グ用の処理ガスとして、ＢＣｌ3，Ｃｌ2，ＣＨ2Ｆ2の混
合ガスを用いることによりＣＨ2Ｆ2ガスを加えない場合
に比べアルミニウム合金膜のエッチング速度では従来比
１．５倍，マスク材とアルミニウム合金膜との選択比で
は１．３倍，および異方性形状を得ることができた。When the aluminum alloy shown in FIG. 1 is etched by using the apparatus shown in FIG. 2, when CH 2 F 2 is added to BCl 3 and Cl 2 as a processing gas for etching, as shown in FIG. The characteristics were obtained. That is, BCl 3 and C
Under conditions consisting of a mixed gas with l 2 , side etching occurs on the side wall of the aluminum alloy due to lack of side wall protection component, but when CH 2 F 2 gas was mixed, an anisotropic shape could be obtained with an addition amount of about 3%. . At this time, the selection ratio with respect to the mask material was almost constant. Thus, by using a mixed gas of BCl 3 , Cl 2 , and CH 2 F 2 as a processing gas for etching, the etching rate of the aluminum alloy film is 1.5 times that of the conventional case as compared with the case where CH 2 F 2 gas is not added. Double, the mask material and the aluminum alloy film had a selection ratio of 1.3, and an anisotropic shape could be obtained.
【００１４】なお、本装置を用いての処理は、処理圧力
が５〜３０ｍＴｏｒｒ、マイクロ波パワーが５００〜１
４００Ｗ、イオンの入射エネルギーを与えるための高周
波電力値が５０〜２００Ｗという範囲で特に効果的であ
った。In the processing using this apparatus, the processing pressure is 5 to 30 mTorr and the microwave power is 500 to 1
It was particularly effective at a high frequency power value of 400 W and a high frequency power value of 50 to 200 W for applying ion incident energy.
【００１５】また、混合ガスとしてのＢＣｌ3，Ｃｌ2，
ＣＨ2Ｆ2は、この場合、各々の流量がＢＣｌ3：４０〜
２００ｍl／ｓｅｃ，Ｃｌ2：６０〜３００ｍl／ｓｅ
ｃ，ＣＨ2Ｆ2：３〜３０ｍl／ｓｅｃの範囲で効果的で
あり、６インチウエハの処理時に比べ８インチウエハの
処理時には供給量をそれぞれ多くすると良い。Further, BCl 3 , Cl 2 as a mixed gas,
In this case, CH 2 F 2 has a flow rate of BCl 3 : 40-
200 ml / sec, Cl 2 : 60 to 300 ml / se
c, CH 2 F 2 : It is effective in the range of 3 to 30 ml / sec, and it is preferable to increase the supply amount when processing an 8-inch wafer as compared to when processing a 6-inch wafer.
【００１６】また、本一実施例では、アルミニウム系材
料としてアルミニウム合金を例に説明したが、この他に
アルミニウムまたはアルミニウム合金とバリアメタル
（例えばＴｉＮ／Ｔｉ，Ｗ，ＴｉＷ等）との多層膜アル
ミニウム合金膜であっても同様の効果がある。In this embodiment, an aluminum alloy is used as an example of the aluminum-based material, but in addition to this, a multilayer film aluminum of aluminum or an aluminum alloy and a barrier metal (for example, TiN / Ti, W, TiW). The same effect can be obtained with an alloy film.
【００１７】また、本一実施例では、ハロゲン系ガスと
してＢＣｌ3，Ｃｌ2を用いたガスで説明したが、この他
にＨＢｒ，Ｂｒ2またはＢＢｒ3等のガスであっても良
い。また、本一実施例では塩素を含まないフロン系ガス
として、ＣＨ2Ｆ2を用いたガスで説明したが、この他に
ＣＦ4，ＣＨＦ3，ＣＨ3ＦまたはＣＨ4等のガスであって
も良い。Further, in the present embodiment, the gas using BCl 3 and Cl 2 as the halogen-based gas has been described, but other gas such as HBr, Br 2 or BBr 3 may be used. In addition, although the gas using CH 2 F 2 as the CFC-free gas containing no chlorine has been described in the present embodiment, other gas such as CF 4 , CHF 3 , CH 3 F or CH 4 may be used. Is also good.
【００１８】さらに、本一実施例では処理ガスのプラズ
マを発生させる方法として、マイクロ波電界と磁界との
作用を用いたものについて説明したが、プラズマの発生
方法としてこれに限られるものではなく、周知の、例え
ば、平行平板電極を用いたもの，高周波コイルを用いた
もの，その他誘導エネルギを用いたもの等種々のプラズ
マ発生装置が適用できることは言うまでもない。Further, in the present embodiment, the method of using the action of the microwave electric field and the magnetic field has been described as the method of generating the plasma of the processing gas, but the method of generating the plasma is not limited to this. It goes without saying that various well-known plasma generators such as those using parallel plate electrodes, those using high frequency coils, and others using inductive energy can be applied.
【００１９】[0019]
【発明の効果】本発明はアルミニウム系膜構造のウエハ
をハロゲン系ガスと塩素を含まないフロン系ガスとの混
合ガスのプラズマを用いてエッチング処理することによ
り、アルミニウム系膜構造のウエハをパターン密度及び
寸法等に関係なく良好なエッチング形状を確保し、ま
た、アルミニウム系材料の膜とマスク材の選択性を上げ
てエッチング処理することができるという効果がある。According to the present invention, a wafer having an aluminum-based film structure is subjected to etching treatment using plasma of a mixed gas of a halogen-based gas and a fluorocarbon-free gas, which does not contain chlorine, to thereby obtain a pattern density of the wafer having an aluminum-based film structure. In addition, there is an effect that a good etching shape can be secured regardless of the size and the like, and the etching treatment can be performed by increasing the selectivity between the aluminum-based material film and the mask material.
【図１】本発明の一実施例であるドライエッチング方法
により処理した被エッチング面を示す断面図である。FIG. 1 is a cross-sectional view showing a surface to be etched processed by a dry etching method according to an embodiment of the present invention.
【図２】本発明のドライエッチング方法を実施するため
の装置の一例を示すマイクロ波エッチング装置の構成図
である。FIG. 2 is a configuration diagram of a microwave etching apparatus showing an example of an apparatus for performing the dry etching method of the present invention.
【図３】本発明の一実施例であるハロゲン系ガスに混合
するＣＨ2Ｆ2流量とサイドエッチ量及び選択比の関係を
示す図である。FIG. 3 is a diagram showing a relationship between a flow rate of CH 2 F 2 mixed with a halogen-based gas, a side etch amount, and a selection ratio, which is an embodiment of the present invention.
【図４】従来技術によるサイドエッチ量及び選択比とイ
オンエネルギーとの関係を示す図である。FIG. 4 is a diagram showing a relationship between a side etching amount and a selection ratio and ion energy according to a conventional technique.
１…マスク、２…アルミニウム合金膜、３…下地酸化
膜、４…シリコン基板、１０…処理室、１１…試料台、
１２…高周波電源、１３…ウエハ、１４…放電管、１５
…ガス供給口、１６…排気口、１７…導波管、１８…マ
グネトロン、１９…ソレノイドコイル。1 ... Mask, 2 ... Aluminum alloy film, 3 ... Base oxide film, 4 ... Silicon substrate, 10 ... Processing chamber, 11 ... Sample stage,
12 ... High frequency power source, 13 ... Wafer, 14 ... Discharge tube, 15
... Gas supply port, 16 ... Exhaust port, 17 ... Waveguide, 18 ... Magnetron, 19 ... Solenoid coil.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 武居 秀則 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidenori Takei 794 Azuma Higashitoyo, Kudamatsu City, Yamaguchi Prefecture Stock Company Hitachi Ltd. Kasado Plant
Claims (9)
系ガスと塩素を含まないフロン系ガスとの混合ガスのプ
ラズマによってエッチング処理することを特徴とするド
ライエッチング方法。1. A dry etching method characterized in that a wafer having a film containing aluminum is etched by plasma of a mixed gas of a halogen-based gas and a fluorocarbon-free gas containing no chlorine.
ムまたはアルミニウム合金またはアルミニウム合金とそ
の他の膜から構成される多層膜である請求項１記載のド
ライエッチング方法。2. The dry etching method according to claim 1, wherein the film containing aluminum is a multilayer film composed of aluminum, an aluminum alloy, or an aluminum alloy and another film.
シリコンおよび／または銅またはパラジウムからなる合
金である請求項２記載のドライエッチング方法。3. The dry etching method according to claim 2, wherein the aluminum alloy is an alloy composed of aluminum and silicon and / or copper or palladium.
チタン，チタンタングステン，タングステン，シリコ
ン，タングステンシリサイドのうち、１つまたは２つ以
上からなる請求項２記載のドライエッチング方法。4. The other film is titanium nitride,
The dry etching method according to claim 2, comprising one or more of titanium, titanium tungsten, tungsten, silicon, and tungsten silicide.
ＨＢｒ，Ｂｒ2またはＢＢｒ3のうち１つまたはこれらの
組合せである請求項１記載のドライエッチング方法。5. The halogen-based gas is BCl 3 , Cl 2 ,
The dry etching method according to claim 1, wherein the dry etching method is one of HBr, Br 2 or BBr 3 or a combination thereof.
Ｆ4，ＣＨＦ3，ＣＨ2Ｆ2，ＣＨ3ＦまたはＣＨ4のうち１
つまたはこれらの組合せである請求項１記載のドライエ
ッチング方法。6. The chlorofluorocarbon-free gas is C
1 of F 4 , CHF 3 , CH 2 F 2 , CH 3 F or CH 4
The dry etching method according to claim 1, which is one or a combination thereof.
じさせ、ウエハへのプラズマ中のイオンの入射エネルギ
ーを制御可能な試料台にアルミニウム系膜を含む膜構造
のウエハを配置し、ハロゲン系ガスと塩素を含まないフ
ロン系ガスとの混合ガスをマイクロ波電界と磁界との作
用を用いて減圧下でプラズマ化し、該プラズマによって
前記ウエハを処理することを特徴とするドライエッチン
グ方法。7. A wafer having a film structure including an aluminum-based film is placed on a sample stage capable of generating a bias voltage by applying high-frequency power and controlling incident energy of ions in plasma on the wafer, and a halogen-based gas is used. A dry etching method comprising: converting a mixed gas containing a fluorocarbon-free gas into plasma under a reduced pressure by using an action of a microwave electric field and a magnetic field, and processing the wafer with the plasma.
し、前記マイクロ波パワーは５００〜１４００Ｗとし、
前記イオンの入射エネルギーを与えるための高周波電力
値を５０〜２００Ｗとする請求項７記載のドライエッチ
ング方法。8. The reduced pressure state is 5 to 30 mTorr, the microwave power is 500 to 1400 W,
The dry etching method according to claim 7, wherein a high frequency power value for applying the incident energy of the ions is set to 50 to 200W.
の混合ガスとし、各々の流量はＢＣｌ3：４０〜２００
ｍl／ｓｅｃ，Ｃｌ2：６０〜３００ｍl／ｓｅｃ，ＣＨ2
Ｆ2：３〜３０ｍl／ｓｅｃであり、６インチウエハの処
理時に比べ８インチウエハの処理時の供給量をそれぞれ
多くする請求項７記載のドライエッチング方法。9. The mixed gas is BCl 3 , Cl 2 , CH 2 F 2
As a mixed gas of BCl 3 : 40 to 200
ml / sec, Cl 2 : 60 to 300 ml / sec, CH 2
The dry etching method according to claim 7, wherein F 2 is 3 to 30 ml / sec, and the supply amount at the time of processing the 8-inch wafer is larger than that at the time of processing the 6-inch wafer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23126893A JP3161888B2 (en) | 1993-09-17 | 1993-09-17 | Dry etching method |
| TW083108442A TW256935B (en) | 1993-09-17 | 1994-09-13 | |
| KR1019940023354A KR950009953A (en) | 1993-09-17 | 1994-09-15 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23126893A JP3161888B2 (en) | 1993-09-17 | 1993-09-17 | Dry etching method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34644698A Division JP3267254B2 (en) | 1998-12-07 | 1998-12-07 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0786249A true JPH0786249A (en) | 1995-03-31 |
| JP3161888B2 JP3161888B2 (en) | 2001-04-25 |
Family
ID=16920950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23126893A Expired - Fee Related JP3161888B2 (en) | 1993-09-17 | 1993-09-17 | Dry etching method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3161888B2 (en) |
| KR (1) | KR950009953A (en) |
| TW (1) | TW256935B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4690512B2 (en) * | 1998-09-15 | 2011-06-01 | シーメンス アクチエンゲゼルシヤフト | Method for reducing polymer deposition on etched vertical metal lines, corrosion of etched metal lines and corrosion during wet cleaning of etched metal features |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010028673A (en) * | 1999-09-22 | 2001-04-06 | 윤종용 | Method for forming contact hole in semiconductor device using reactive ion etching |
| TW486733B (en) * | 1999-12-28 | 2002-05-11 | Toshiba Corp | Dry etching method and manufacturing method of semiconductor device for realizing high selective etching |
-
1993
- 1993-09-17 JP JP23126893A patent/JP3161888B2/en not_active Expired - Fee Related
-
1994
- 1994-09-13 TW TW083108442A patent/TW256935B/zh not_active IP Right Cessation
- 1994-09-15 KR KR1019940023354A patent/KR950009953A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4690512B2 (en) * | 1998-09-15 | 2011-06-01 | シーメンス アクチエンゲゼルシヤフト | Method for reducing polymer deposition on etched vertical metal lines, corrosion of etched metal lines and corrosion during wet cleaning of etched metal features |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3161888B2 (en) | 2001-04-25 |
| TW256935B (en) | 1995-09-11 |
| KR950009953A (en) | 1995-04-26 |
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