JPH0785441B2 - Rotation angle detector - Google Patents
Rotation angle detectorInfo
- Publication number
- JPH0785441B2 JPH0785441B2 JP61178322A JP17832286A JPH0785441B2 JP H0785441 B2 JPH0785441 B2 JP H0785441B2 JP 61178322 A JP61178322 A JP 61178322A JP 17832286 A JP17832286 A JP 17832286A JP H0785441 B2 JPH0785441 B2 JP H0785441B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- magnetoresistive element
- generating means
- rotation angle
- field generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Adjustable Resistors (AREA)
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、強磁性磁気抵抗素子を用いた回転角度検出
装置に関する。The present invention relates to a rotation angle detecting device using a ferromagnetic magnetoresistive element.
［従来の技術］ 例えば、非接触ポテンショメータは、強磁性磁気抵抗素
子と、これに磁界を印加する回転式の磁石とを備えてお
り、この回転式の磁石から印加される磁界の変化に従っ
て上記強磁性磁気抵抗素子の示す抵抗値が変化するよう
になっている。[Prior Art] For example, a non-contact potentiometer includes a ferromagnetic magnetoresistive element and a rotary magnet that applies a magnetic field to the ferromagnetic magnetoresistive element, and the strong magnetic field changes according to the change in the magnetic field applied from the rotary magnet. The resistance value indicated by the magnetic magnetoresistive element is changed.
第５図はこのような非接触ポテンショメータの構成を示
す平面図であって、絶縁基板11上には強磁性磁気抵抗素
子12が形成されており、この強磁性磁気抵抗素子12の両
端に設けられた電極12a、12b間に電流Ｉが流れるように
なっている。この強磁性磁気抵抗素子12には、一定の間
隔で離隔された状態で角型磁石13が対向設定されてお
り、この磁石13は図示しないケースに回転自在に取付け
られいる。FIG. 5 is a plan view showing the structure of such a non-contact potentiometer, in which a ferromagnetic magnetoresistive element 12 is formed on an insulating substrate 11 and provided at both ends of this ferromagnetic magnetoresistive element 12. A current I flows between the electrodes 12a and 12b. A rectangular magnet 13 is set opposite to the ferromagnetic magnetoresistive element 12 in a state of being separated at a constant interval, and the magnet 13 is rotatably attached to a case (not shown).
上記強磁性磁気抵抗素子12の抵抗値は、強磁性磁気抵抗
素子12に流れる電流Ｉの方向と、角型磁石13の磁界Ｈの
方向が平行になった時に最大となり、それらの方向が直
角になった時に最小となる。第６図は、角型磁石13の回
転角度θに対する強磁性磁気抵抗素子12の抵抗値の変化
状態を示すものであって、この図から分るように、強磁
性磁気抵抗素子12の抵抗値が線形的に変化する有効回転
角度範囲はほぼ60度である。The resistance value of the ferromagnetic magnetoresistive element 12 becomes maximum when the direction of the current I flowing in the ferromagnetic magnetoresistive element 12 and the direction of the magnetic field H of the rectangular magnet 13 become parallel, and those directions are perpendicular to each other. It becomes the minimum when it becomes. FIG. 6 shows the change state of the resistance value of the ferromagnetic magnetoresistive element 12 with respect to the rotation angle θ of the square magnet 13. As can be seen from this figure, the resistance value of the ferromagnetic magnetoresistive element 12 is shown. The effective rotation angle range in which is linearly changed is about 60 degrees.
［発明が解決しようとする問題点］ この発明は上記のような点に鑑みなされたもので、従来
の非接触ポテンショメータよりもより有効回転角度範囲
が広い非接触ポテンショメータを抵抗しようとするもの
である。[Problems to be Solved by the Invention] The present invention has been made in view of the above points, and is intended to resist a non-contact potentiometer having a wider effective rotation angle range than a conventional non-contact potentiometer. .
［問題点を解決するための手段］ 本願発明は、磁気抵抗素子と、この磁気抵抗素子に対し
て所定の間隔をもって設定されるとともに、磁気抵抗素
子の形成面に対して略平行に磁束が発生するように設定
された第１の磁界発生手段と、上記磁気抵抗素子に対し
て所定の間隔をもって上記第１の磁界発生手段と対向す
る位置に回転自在に設定されるとともに、上記第１の磁
界発生手段と同様に前記磁気抵抗素子の形成面に対して
略平行に磁束が発生するように設定された第２の磁界発
生手段とを具備し、上記第２の磁界発生手段の回転にし
たがって、上記第１及び第２の磁界発生手段から上記磁
気抵抗素子に作用する磁束によって発生するとともに、
上記第２の磁界発生手段のみの磁界の回転周期に比べて
長い回転周期部を有する合成磁界の回転を検出するよう
にしたことを特徴とするものである。[Means for Solving Problems] According to the present invention, a magnetic resistance element and a magnetic resistance element are set at a predetermined interval with respect to the magnetic resistance element, and a magnetic flux is generated substantially parallel to a surface on which the magnetic resistance element is formed. The first magnetic field generating means and the first magnetic field generating means are rotatably set at a position facing the first magnetic field generating means at a predetermined distance from the magnetoresistive element. A second magnetic field generating means set to generate a magnetic flux substantially parallel to the surface on which the magnetoresistive element is formed, similar to the generating means, and according to the rotation of the second magnetic field generating means, Generated by the magnetic flux acting on the magnetoresistive element from the first and second magnetic field generating means,
It is characterized in that the rotation of the composite magnetic field having a rotation period portion longer than the rotation period of the magnetic field of only the second magnetic field generating means is detected.
［作用］ 上記の手段により、可動側の磁界発生手段の回転角度
と、抵抗素子の抵抗値が直線的に変化する領域との関係
で、できるだけ広い回転角度で直線性が得られるし、ま
た、薄型のポテンショメータを実現することができる。[Operation] Due to the above-mentioned means, linearity can be obtained with a rotation angle as wide as possible due to the relationship between the rotation angle of the movable-side magnetic field generation means and the region where the resistance value of the resistance element changes linearly. It is possible to realize a thin potentiometer.
［実施例］ 以下図面を参照してこの発明の一実施例を説明する。第
１図は、この発明に係る回転角度検出装置としての非接
触ポテンショメータの構成を説明するためのものであっ
て、磁気を遮断できるような材料で構成されたケース21
の底部にはバイアス用磁石22が、例えば接着剤等で固定
されている。このバイアス用磁石22上には絶縁基板23が
固定され、この基板23上には角度検出用の強磁性磁気抵
抗素子24が形成されている。この場合、この絶縁基板23
は、強磁性磁気抵抗素子24の長手方向がバイアス用磁石
22の磁界方向に対して45度の角度を有するように固定さ
れるものである。ここで、バイアス用磁石22の強磁性磁
気抵抗素子24に対応する面における磁束密度は40［mT］
である。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is for explaining the configuration of a non-contact potentiometer as a rotation angle detecting device according to the present invention, and is a case 21 made of a material capable of blocking magnetism.
A biasing magnet 22 is fixed to the bottom of the device with, for example, an adhesive agent. An insulating substrate 23 is fixed on the bias magnet 22, and an angle detecting ferromagnetic magnetoresistive element 24 is formed on the substrate 23. In this case, this insulating substrate 23
Is a magnet for biasing in the longitudinal direction of the ferromagnetic magnetoresistive element 24.
It is fixed so as to have an angle of 45 degrees with respect to the magnetic field direction of 22. Here, the magnetic flux density on the surface of the bias magnet 22 corresponding to the ferromagnetic magnetoresistive element 24 is 40 [mT].
Is.
強磁性磁気抵抗素子24の両端には電極24a、24bが形成さ
れており、この電極24a、24b間に電流Ｉがその長手方向
に沿って流れるようになっている。上記ケース21の上蓋
部21aには角型磁石25が回転自在に取付けられている。
具体的には、角型磁石25に取付けられた回転軸26が、例
えばボールベアリング等を用いた軸受け27に取付けられ
ている。このように回転自在に取付けられた角型磁石25
の強磁性磁気抵抗素子24に対応する面における磁束密度
は40［mT］である。Electrodes 24a and 24b are formed at both ends of the ferromagnetic magnetoresistive element 24, and a current I flows between the electrodes 24a and 24b along the longitudinal direction thereof. A square magnet 25 is rotatably attached to the upper lid portion 21a of the case 21.
Specifically, the rotating shaft 26 attached to the rectangular magnet 25 is attached to a bearing 27 using, for example, a ball bearing. Square magnet 25 rotatably mounted in this way
The magnetic flux density on the surface corresponding to the ferromagnetic magnetoresistive element 24 is 40 [mT].
したがって、強磁性磁気抵抗素子24に印加される合成磁
界Ｇは、バイアス用磁石22の磁界Ｈと角型磁石25の磁界
H0とのベクトル和となり、角型磁石25の回転に伴って強
磁性磁気抵抗素子24に印加される合成磁界Ｇが変化する
ようになる。Therefore, the combined magnetic field G applied to the ferromagnetic magnetoresistive element 24 is the magnetic field H of the bias magnet 22 and the magnetic field of the square magnet 25.
This is the vector sum with H 0, and the combined magnetic field G applied to the ferromagnetic magnetoresistive element 24 changes as the square magnet 25 rotates.
第２図は、このように構成された非接触ポテンショメー
タの抵抗値の変化特性を示すものであって、角型磁石25
の回転角度θの変化に伴って強磁性磁気抵抗素子24の示
す抵抗値が変化するようになっている。FIG. 2 shows the change characteristic of the resistance value of the non-contact potentiometer having the above-mentioned structure.
The resistance value indicated by the ferromagnetic magnetoresistive element 24 changes with the change of the rotation angle θ of the.
強磁性磁気抵抗素子24の示す抵抗値は、この磁気抵抗素
子24に流れる電流方向とこれに印加される磁界方向が平
行な場合に最大となり、それらの方向が直角の場合に最
小となるものである。このため、バイアス用磁石22の磁
界Ｈと角型磁石25の磁界H0の合成磁界Ｇが強磁性磁気抵
抗素子24に流れる電流Ｉの方向と平行に成る時、すなわ
ち角型磁石25の回転角度θが315度の時に抵抗値は最大
となり、合成磁界Ｇが電流Ｉの方向と直角の方向に成る
時、すなわち角型磁石25の回転角度θが135度の時にそ
の抵抗値は最小となる。The resistance value indicated by the ferromagnetic magnetoresistive element 24 is maximum when the direction of the current flowing through the magnetoresistive element 24 is parallel to the direction of the magnetic field applied thereto, and is minimum when the directions are perpendicular to each other. is there. Therefore, when the combined magnetic field G of the magnetic field H of the bias magnet 22 and the magnetic field H 0 of the square magnet 25 becomes parallel to the direction of the current I flowing through the ferromagnetic magnetoresistive element 24, that is, the rotation angle of the square magnet 25. When θ is 315 degrees, the resistance value is maximum, and when the combined magnetic field G is in the direction perpendicular to the direction of the current I, that is, when the rotation angle θ of the square magnet 25 is 135 degrees, the resistance value is minimum.
第２図からわかるように、強磁性磁気抵抗素子24の抵抗
値が線形的に変化する有効回転角度の範囲は、ほぼ120
度なり、この値は従来のものに比べて２倍となる。As can be seen from FIG. 2, the effective rotation angle range in which the resistance value of the ferromagnetic magnetoresistive element 24 changes linearly is approximately 120.
This value is twice that of the conventional one.
第３図（Ａ）および（Ｂ）は、他の実施例を示すもので
あって、この実施例において、絶縁基板23は、この絶縁
基板23上に形成される強磁性磁気抵抗素子24の長手方向
がバイアス用磁石22の磁界Ｈの方向に対して30度の角度
を有するように設定されている。バイアス用磁石22の強
磁性磁気抵抗素子24に対応する面における磁束密度は40
［mT］である。また、ケース21の上蓋部21aに回転自在
に取り付けられている角型磁石25の強磁性磁気抵抗素子
24に対応する面における磁束密度は、20［mT］となって
いる。FIGS. 3 (A) and 3 (B) show another embodiment, in which the insulating substrate 23 is the longitudinal direction of the ferromagnetic magnetoresistive element 24 formed on the insulating substrate 23. The direction is set to have an angle of 30 degrees with respect to the direction of the magnetic field H of the bias magnet 22. The magnetic flux density on the surface of the bias magnet 22 corresponding to the ferromagnetic magnetoresistive element 24 is 40
[MT]. Further, the ferromagnetic magnetoresistive element of the rectangular magnet 25 rotatably attached to the upper lid portion 21a of the case 21.
The magnetic flux density on the surface corresponding to 24 is 20 [mT].
第４図はこのように構成された非接触ポテンショメータ
の抵抗値の変化の状態を示すものであって、この図から
分るように、非接触ポテンショメータをこのように構成
した場合でも、強磁性磁気抵抗素子24の抵抗値が線形的
に変化する有効回転角度範囲を従来よりも広くすること
ができる。FIG. 4 shows the state of change in the resistance value of the non-contact potentiometer configured as described above. As can be seen from this figure, even when the non-contact potentiometer is configured in this way, the ferromagnetic magnetic The effective rotation angle range in which the resistance value of the resistance element 24 changes linearly can be made wider than before.
［発明の効果］ 以上のようにこの発明によれば、強磁性抵抗素子とそれ
ぞれ所定の間隔をもって対向配置された２つの磁界発生
手段を備えたことにより、簡単な構成で、強磁性磁気抵
抗素子の示す抵抗値が線形的に変化する有効回転角度の
範囲を効果的に広くすることが可能となる。[Effects of the Invention] As described above, according to the present invention, the ferromagnetic magnetoresistive element is provided with the two magnetic field generating means that are opposed to the ferromagnetic resistive element at a predetermined interval. It is possible to effectively widen the range of the effective rotation angle in which the resistance value indicated by is linearly changed.
第１図（Ａ）はこの発明の一実施例に係る回転角度検出
装置を示す平面図、第１図（Ｂ）は第１図（Ａ）に示し
た回転角度検出装置を示す断面図、第２図は第１図に示
した回転角度検出装置の抵抗値の変化特性を示す図、第
３図（Ａ）はこの発明の他の実施例である回転角度検出
装置を示す平面図、第３図（Ｂ）は第３図（Ａ）に示し
た回転角度検出装置の断面図、第４図は第３図に示した
回転角度検出装置の抵抗値の変化特性を示す図、第５図
は従来の非接触ポテンショメータの原理を示す平面図、
第６図は第５図に示した非接触ポテンショメータの抵抗
値の変化特性を示す図である。 21……ケース、22……バイアス用磁石、23……絶縁基
盤、24……強磁性磁気抵抗素子、25……角型磁石、26…
…回転軸、27……軸受け。1 (A) is a plan view showing a rotation angle detecting device according to an embodiment of the present invention, FIG. 1 (B) is a sectional view showing the rotation angle detecting device shown in FIG. 1 (A), FIG. 2 is a diagram showing a resistance value change characteristic of the rotation angle detection device shown in FIG. 1, and FIG. 3 (A) is a plan view showing a rotation angle detection device according to another embodiment of the present invention. 3B is a cross-sectional view of the rotation angle detection device shown in FIG. 3A, FIG. 4 is a view showing resistance value change characteristics of the rotation angle detection device shown in FIG. 3, and FIG. A plan view showing the principle of a conventional non-contact potentiometer,
FIG. 6 is a diagram showing the resistance value change characteristic of the non-contact potentiometer shown in FIG. 21 …… case, 22 …… bias magnet, 23 …… insulating base, 24 …… ferromagnetic magnetoresistive element, 25 …… square magnet, 26…
… Rotary shaft, 27 …… Bearing.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 有賀 勝彦 愛知県刈谷市昭和町１丁目１番地 日本電 装株式会社内 (72)発明者 松下 利和 愛知県刈谷市昭和町１丁目１番地 日本電 装株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuhiko Ariga 1-1, Showa-cho, Kariya, Aichi Nihon Denso Co., Ltd. (72) Inventor Toshikazu Matsushita 1-1, Showa-cho, Kariya, Aichi Nihon Denso Within the corporation
Claims (2)
るとともに、磁気抵抗素子の形成面に対して略平行に磁
束が発生するように設定された第１の磁界発生手段と、 上記磁気抵抗素子に対して所定の間隔をもって上記第１
の磁界発生手段と対向する位置に回転自在に設定される
とともに、上記第１の磁界発生手段と同様に前記磁気抵
抗素子の形成面に対して略平行に磁束が発生するように
設定された第２の磁界発生手段とを具備し、 上記第２の磁界発生手段の回転にしたがって、上記第１
及び第２の磁界発生手段から上記磁気抵抗素子に作用す
る磁束によって発生するとともに、上記第２の磁界発生
手段のみの磁界の回転に比べて緩やかに回転する合成磁
界の回転を検出するようにしたことを特徴とする回転角
度検出装置。1. A magnetoresistive element and a first magnetoresistive element, which is set at a predetermined distance from the magnetoresistive element and is set so that a magnetic flux is generated substantially parallel to a surface on which the magnetoresistive element is formed. The magnetic field generating means and the first magnetoresistive element are arranged at a predetermined distance from each other.
Is rotatably set at a position opposed to the magnetic field generating means and is set so as to generate a magnetic flux substantially parallel to the surface on which the magnetoresistive element is formed, like the first magnetic field generating means. A second magnetic field generating means, and the first magnetic field generating means rotates according to the rotation of the second magnetic field generating means.
And the rotation of the composite magnetic field which is generated by the magnetic flux acting on the magnetoresistive element from the second magnetic field generating means and is rotated more slowly than the rotation of the magnetic field of only the second magnetic field generating means. A rotation angle detection device characterized by the above.
素子に印加される磁界の大きさは、上記第２の磁界発生
手段から上記磁気抵抗素子に印加される磁界の大きさに
等しいか、それより大きな値に設定されるようにした特
許請求の範囲第１項記載の回転角度検出装置。2. The magnitude of the magnetic field applied from the first magnetic field generating means to the magnetoresistive element is equal to the magnitude of the magnetic field applied from the second magnetic field generating means to the magnetoresistive element. The rotation angle detecting device according to claim 1, wherein the rotation angle detecting device is set to a value larger than that.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178322A JPH0785441B2 (en) | 1986-07-29 | 1986-07-29 | Rotation angle detector |
| US07/076,891 US4835509A (en) | 1986-07-29 | 1987-07-23 | Noncontact potentiometer |
| EP87110695A EP0255052B1 (en) | 1986-07-29 | 1987-07-23 | Noncontact potentiometer |
| DE3788831T DE3788831T2 (en) | 1986-07-29 | 1987-07-23 | Contactless potentiometer. |
| KR1019870008259A KR900007100B1 (en) | 1986-07-29 | 1987-07-29 | Non-contact potentiometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178322A JPH0785441B2 (en) | 1986-07-29 | 1986-07-29 | Rotation angle detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6334985A JPS6334985A (en) | 1988-02-15 |
| JPH0785441B2 true JPH0785441B2 (en) | 1995-09-13 |
Family
ID=16046455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178322A Expired - Lifetime JPH0785441B2 (en) | 1986-07-29 | 1986-07-29 | Rotation angle detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0785441B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355764A (en) * | 1976-11-01 | 1978-05-20 | Denki Onkyo Co Ltd | Potentiometer |
-
1986
- 1986-07-29 JP JP61178322A patent/JPH0785441B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355764A (en) * | 1976-11-01 | 1978-05-20 | Denki Onkyo Co Ltd | Potentiometer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334985A (en) | 1988-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |