JPH0777190B2 - Resist pattern resistance improvement method - Google Patents
Resist pattern resistance improvement methodInfo
- Publication number
- JPH0777190B2 JPH0777190B2 JP61299422A JP29942286A JPH0777190B2 JP H0777190 B2 JPH0777190 B2 JP H0777190B2 JP 61299422 A JP61299422 A JP 61299422A JP 29942286 A JP29942286 A JP 29942286A JP H0777190 B2 JPH0777190 B2 JP H0777190B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- resistance
- resist
- improving
- improvement method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体製造工程のうちリソグラフィ工程におい
て、レジストパターンの耐性（耐熱性・耐エッチング
性、耐イオン注入性など）を向上させる方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for improving resist pattern resistance (heat resistance / etching resistance, ion implantation resistance, etc.) in a lithography process of a semiconductor manufacturing process. .
従来の技術 半導体リソグラフィ工程においては、形成したレジスト
パターンの耐性（耐熱性・耐エッチング性・耐イオン注
入性など）を向上させることが重要である。2. Description of the Related Art In a semiconductor lithography process, it is important to improve the resistance of a formed resist pattern (heat resistance, etching resistance, ion implantation resistance, etc.).
従来、このようなレジストパターンの耐性を向上させる
方法としては、キセノン・水銀ランプなどの定常光の遠
紫外線を照射させるという方法がある。Conventionally, as a method of improving the resistance of such a resist pattern, there is a method of irradiating far-ultraviolet light of a constant light such as a xenon / mercury lamp.
この方法の原理は、レジストの組成物を架橋させて耐性
を上げるというものであるが、この方法ではレジスト組
成物を架橋させるために必要な遠紫外線の照射中に高温
（約120℃以上）となり、レジストパターンの耐性が向
上する以前にレジストパターンが変形して所望のパター
ン寸法精度が得られず、結局素子の歩留まりの低下の原
因となる。The principle of this method is to increase the resistance by cross-linking the resist composition, but in this method, the temperature becomes high (about 120 ° C. or higher) during the irradiation of far-ultraviolet light necessary for cross-linking the resist composition. Before the resistance of the resist pattern is improved, the resist pattern is deformed and the desired pattern dimensional accuracy cannot be obtained, which eventually causes a decrease in the yield of the device.
第２図を用いて従来のレジストパターン耐性向上方法を
説明する。A conventional method for improving resist pattern resistance will be described with reference to FIG.
半導体基板５上に、所望のレジストパターンを露光・現
像により形成する（第２図（ａ））。しかるのち、キセ
ノン・水銀ランプからの遠紫外線をレジストパターンに
照射する（第２図（ｂ））。照射後のレジストパターン
1Bは遠紫外線により架橋を起こして耐性が向上したもの
となっているが、照射時の熱により変形したパターンと
なった（第２図（ｃ））。A desired resist pattern is formed on the semiconductor substrate 5 by exposure and development (FIG. 2 (a)). After that, the resist pattern is irradiated with deep ultraviolet rays from a xenon mercury lamp (FIG. 2 (b)). Resist pattern after irradiation
Although 1B had improved resistance due to cross-linking caused by deep ultraviolet rays, it had a pattern deformed by heat during irradiation (Fig. 2 (c)).
なお、遠紫外線の照射時間はレジストの耐性を上げるた
めには最低60秒以上は必要であり、この間にレジストパ
ターンは遠紫外線の照射熱により約120℃以上となり変
形した。In addition, the irradiation time of far-ultraviolet ray must be at least 60 seconds or more to improve the resistance of the resist, and during this time, the resist pattern was deformed to about 120 ° C. or more by the heat of irradiation of far-ultraviolet ray.
発明が解決しようとする問題点 しかしながら、このような従来の技術においてはレジス
トパターン耐性向上工程の間に、それ自身が熱により変
形するという問題点があった。Problems to be Solved by the Invention However, such a conventional technique has a problem in that it is deformed by heat during the resist pattern resistance improving process.
問題点を解決するための手段 本発明は従来例であったような問題点を解決すべく、レ
ジストパターンの耐性向上の方法としてエキシマレーザ
を照射することを特徴とする。遠紫外線であるエキシマ
レーザはパルス発振であるために通常の定常光に比べて
熱伝導はほとんどなく、レジストパターンの熱変形なし
にその耐性を向上させることができる。Means for Solving Problems The present invention is characterized by irradiating an excimer laser as a method for improving the resistance of a resist pattern in order to solve the problems as in the conventional example. Since the excimer laser which is far-ultraviolet is a pulsed oscillation, it has almost no heat conduction as compared with ordinary stationary light, and its resistance can be improved without thermal deformation of the resist pattern.
なおエキシマレーザはArF,XeCl,KrFなどパネル発振可能
な遠紫外線であれば良く、その種類や出力、又対象とな
るレジストパターンの種類により、レジストパターン耐
性向上に要する時間は異なるがいずれの場合にもパター
ン変形は認められない。The excimer laser may be far ultraviolet light capable of panel oscillation such as ArF, XeCl, and KrF, and the time required for resist pattern resistance improvement varies depending on the type and output, and the type of target resist pattern, but in any case However, no pattern deformation is observed.
作用 本発明の方法によれば、レジストパターンの変形なしに
その耐性を向上させることができる。Effect According to the method of the present invention, the resistance of the resist pattern can be improved without deformation.
実施例 第１図を用いて本発明の実施例を説明する。Embodiment An embodiment of the present invention will be described with reference to FIG.
半導体基板５上に所望のレジストパターン1A（レジス
ト，シプレイ社製MPS-1400（ノボラックポジレジス
ト））を露光・現像により形成する（第１図（ａ））。
KrF（249nm）エキシマレーザ２を５パルス、レジストパ
ターンに照射した。なお、１パルスあたりのエネルギー
は10mJ/cm2である。なおこのときのレジストパターン1A
上の温度は35℃であった（第１図（ｂ））。照射後のレ
ジストパターン1A′の形状は全く照射前のレジストパタ
ーン1Aの形状と相違はなかった（第１図（ｃ））。A desired resist pattern 1A (resist, MPS-1400 (Novolac positive resist) manufactured by Shipley Co., Ltd.) is formed on the semiconductor substrate 5 by exposure and development (FIG. 1 (a)).
The resist pattern was irradiated with KrF (249 nm) excimer laser 2 for 5 pulses. The energy per pulse is 10 mJ / cm 2 . Note that the resist pattern 1A at this time
The upper temperature was 35 ° C (Fig. 1 (b)). The shape of the resist pattern 1A 'after irradiation was not different from the shape of the resist pattern 1A before irradiation (Fig. 1 (c)).
この後このレジストパターン1A′に200℃30分の熱（オ
ーブン）４を与えたが（第１図（ｄ））全くその形状に
変化はなかった（第１図（ｅ））。Then, heat (oven) 4 at 200 ° C. for 30 minutes was applied to this resist pattern 1A ′ (FIG. 1 (d)), but its shape was not changed at all (FIG. 1 (e)).
もちろん、この後のエッチングなイオン注入という工程
に際してもパターン変形はなかった。なお、用いるレジ
ストに際しても、ノボラック系のOFPR5000（東京応化
製），ネガ型のNNR747（長瀬産業製）など各種レジスト
において同様の効果が認められた。Of course, there was no pattern deformation in the subsequent step of ion implantation such as etching. Regarding the resist used, similar effects were observed in various resists such as the novolac type OFPR5000 (manufactured by Tokyo Ohka) and the negative type NNR747 (manufactured by Nagase & Co., Ltd.).
発明の効果 本発明によれば、レジストパターンの変形なしにその耐
性を向上させることができ、半導体素子の歩留まりを向
上させることとなり工業的価値が高い。EFFECTS OF THE INVENTION According to the present invention, the resistance of a resist pattern can be improved without being deformed, and the yield of semiconductor elements can be improved, which has a high industrial value.
第１図（ａ）〜（ｅ）は本発明の一実施例のレジスト耐
性向上方法を説明するための断面図、第２図（ａ）〜
（ｃ）は従来のレジスト耐性向上方法を説明するための
断面図である。 1A,1A′……レジストパターン,2……エキシマレーザ光,
4……熱。1 (a) to 1 (e) are sectional views for explaining a resist resistance improving method according to an embodiment of the present invention, and FIGS. 2 (a) to 2 (e).
(C) is a sectional view for explaining a conventional resist resistance improving method. 1A, 1A ′ …… resist pattern, 2 …… excimer laser light,
4 ... heat.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−166951（ＪＰ，Ａ) 特開 昭61−111529（ＪＰ，Ａ) 特開 昭61−152018（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-166951 (JP, A) JP-A-61-111529 (JP, A) JP-A-61-152018 (JP, A)
Claims (2)
成した後、前記レジストパターンにエキシマレーザ光を
照射して前記レジストパターンの組成物の架橋反応を起
こして前記レジストパターンの耐性を向上させ、その後
エッチングまたは不純物注入を行うことを特徴とするレ
ジストパターン耐性向上方法。1. A resist pattern is formed by exposure and development, and then the resist pattern is irradiated with excimer laser light to cause a crosslinking reaction of the composition of the resist pattern to improve the resistance of the resist pattern, and then etching. Alternatively, a method for improving resist pattern resistance is characterized by implanting impurities.
発振されることを特徴とする特許請求の範囲第１項に記
載のレジストパターン耐性向上方法。2. The method for improving resist pattern resistance according to claim 1, wherein the excimer laser light is oscillated by ArF, XeCl, and KrF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61299422A JPH0777190B2 (en) | 1986-12-16 | 1986-12-16 | Resist pattern resistance improvement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61299422A JPH0777190B2 (en) | 1986-12-16 | 1986-12-16 | Resist pattern resistance improvement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63151022A JPS63151022A (en) | 1988-06-23 |
| JPH0777190B2 true JPH0777190B2 (en) | 1995-08-16 |
Family
ID=17872358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61299422A Expired - Fee Related JPH0777190B2 (en) | 1986-12-16 | 1986-12-16 | Resist pattern resistance improvement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0777190B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312257A (en) * | 1996-03-18 | 1997-12-02 | Fujitsu Ltd | Fine processing method and device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60166951A (en) * | 1984-02-10 | 1985-08-30 | Canon Inc | Illuminating optical device |
| JPS61111529A (en) * | 1984-11-06 | 1986-05-29 | Canon Inc | Exposure amount controller |
| JPH0727887B2 (en) * | 1984-12-25 | 1995-03-29 | 株式会社東芝 | Ashing method for organic matter |
-
1986
- 1986-12-16 JP JP61299422A patent/JPH0777190B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63151022A (en) | 1988-06-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |