JPH077046A - Manufacture of film carrier and semiconductor device - Google Patents

Abstract

PURPOSE:To provide a film carrier capable of manufacturing a semiconductor device at high speed without damaging a board which mounts semiconductor components, and what is more, without increasing the size of the device as well. CONSTITUTION:This is a film carrier 15 which comprises a flexible base film 2 to which a device hole 3 is installed and an inner lead wire 16a which is protrusively installed in the device hole 3 and an outer lead wire 16b which is installed continuously with the inner lead wire, and what is more, which is extended outside the device hole 3. The outer lead wire 16b comprises a first outer lead wire A which is formed in a larger width than the inner lead wire 16a and bent when it is mounted and a second outer lead wire B which is formed in a smaller width than the first outer lead A and pressed with a bonding tool when it is mounted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film carrier and a semiconductor device manufacturing method for manufacturing a semiconductor device by mounting a semiconductor component using the film carrier on a substrate.

[0002]

2. Description of the Related Art In the TAB (Tape Automated Bonding) technique, a film carrier 1 as shown in FIGS. 6A and 6B is generally used. As shown in FIG. 6A, this film carrier 1 is provided with a long base film 2. Sprocket wheels 2a for feeding drive are provided at both ends of the base film 2 in the width direction so that the base film 2 is fed and driven in a direction indicated by an arrow in the figure.

In this base film 1, rectangular device holes shown by 3 in the figure are provided at predetermined intervals along the longitudinal direction (only one is shown in the figure). Further, on the outside of the four sides that divide the device hall 3,
Outer lead holes 4 are arranged.

A wiring pattern as shown in the drawing is formed on the film carrier 1 at the position where the device hole 3 and the outer lead hole 4 are provided. This wiring pattern has a tip portion 5a (hereinafter referred to as "inner reel").
From the plurality of leads 5 ... In which the other end 5b (hereinafter referred to as "outer lead") is erected on the outer lead hole 4 ... Become. The plurality of leads 5 ... are the device holes 3
Are extended in four directions from each side.

The inner leads 5a ... Are formed to have a small width, whereas the outer leads 5b are formed to have a larger width than the inner leads 5a. This is because the inner lead 5a needs to correspond to fine electrodes provided at a narrow pitch of the semiconductor element as described later, while the outer lead 5b is bent in a gull wing shape in a later step. This is because a considerable amount of strength is required to become the "foot" of this component.

Next, a process of manufacturing a semiconductor device using this film carrier 1 will be described with reference to FIG. As shown in FIG. 7A, the film carrier 1 is stretched substantially horizontally in a state of being inverted from the state shown in FIG. 6B. The film carrier 1 is intermittently driven and driven in the direction indicated by the arrow in the figure, and sequentially stops the device hall 3 at the bonding position indicated by Bg in the figure.

Below the bonding position Bg, the semiconductor element 7 is held on the upper end surface, and the electrodes 7a provided on the upper surface of the semiconductor element 7 are brought into contact with the lower surface of the inner lead 5a. A bonding stage 8 is provided. A bonding mechanism 9 is provided above the bonding stage 8 with the film carrier 1 interposed therebetween.

The bonding mechanism 9 has the above-mentioned inner structure.
The needle-like capillaries 10 are provided for pressing the upper surface of the lead 5a downward and pressing the inner leads 5a one by one against each electrode 7a of the semiconductor element 7. This capillary 10 is held at the tip of the ultrasonic horn shown in FIG.
Ultrasonic vibration is applied from an ultrasonic oscillation source (not shown).

The bonding mechanism 9 applies ultrasonic energy and heat energy to the contact portion between the inner lead 5a and the electrode 7a of the semiconductor element 7 by using the capillary 10 to apply them. It is designed to be crimped.

The bonding mechanism 9 drives the capillaries 10 in the vertical and horizontal directions at a high speed, so that the inner leads 5a and the semiconductor elements 7 are connected.
Each of the electrodes 7a is individually joined one by one.

Such a bonding method is called a single point bonding method and is one of the bonding methods which can effectively cope with the recent narrowing of the pitch of multiple terminals of semiconductor elements.

When the semiconductor element 7 is inner-lead bonded to the film carrier 1 in this manner, the film carrier 1 and the outer carrier are bonded.
The cord 5b is cut along the alternate long and short dash line shown in FIGS. 6 (a) and 7 (a). Hereinafter, the component cut in this way is referred to as a TAB component (semiconductor component).

As shown in FIG. 7B, the TAB component is formed by forming the outer lead 5b into a gull wing shape and mounting (outer lead bonding) on a substrate indicated by 12 in the figure. This outer lead bonding is also performed by the single point bonding method, for example.

That is, each outer lead 5b of the TAB component is individually attached to a wiring (not shown) provided on the substrate 12 by using the capillary 14 attached to the tip of the ultrasonic horn 13. So that they are joined together.

[0015]

By the way, the conventional film carrier and bonding method have the following problems to be solved. In order to obtain good bonding strength in the above bonding, it is necessary to optimize the bonding conditions (pressurizing force and bonding energy).

For example, the outer lead 5b and the inner
When the bonding conditions of the lead 5a are compared, since the width of the outer lead 5b and the width of the inner lead 5a are different, the bonding conditions of the two must be different.

That is, the joint strength of the outer lead 5b must be at least equal to or greater than the joint strength of the inner lead 5a. For that purpose, it is necessary to make the pressing force and the bonding energy (heating amount and ultrasonic wave application time) per unit area equal to or more than each. Therefore, when the outer lead 5b is bonded, it may be necessary to increase the applied pressure and the heating amount due to the large width (joint area).

However, the pressing force transmitted from the outer lead 5b to the substrate 12 is not uniform, and the shape error of the outer lead 5b and the outer lead 5b and the substrate 12 are caused.
There is a case where the distribution of the pressing force varies due to the inclination of the, and the pressing force is locally concentrated. In this case, if the pressing force of the outer lead 5b is larger than the allowable pressing force of the substrate 12, the substrate 12 will be locally concentrated by the pressing force.
There is a risk of cracking or damage.

Further, in order to increase the heating amount, it is necessary to increase the capacity of the heater incorporated in the bonding stage 8, which may result in an increase in size of the device. Furthermore, in the case of single-point bonding, the ultrasonic wave application time must be increased in addition to the increase in the pressing force, and the bonding time may be required.

In a multi-chip module in which a plurality of chips (semiconductor elements) are mounted on a single substrate, when a plurality of different types of chips are mounted, the lead widths of the plurality of chips are different from each other. Bonding tools used
In some cases, different soldering conditions and bonding conditions may have to be used. Even in this case, the above-mentioned problem may occur.

The present invention has been made in view of the above circumstances, and a film carrier and a semiconductor capable of manufacturing a semiconductor device at high speed without damaging the substrate and without increasing the size of the bonding apparatus. It is an object of the present invention to provide a method for manufacturing a device.

[0022]

The first means of the present invention is a flexible base film, a plurality of inner leads provided on the base film, and the inner base. In a film carrier comprising a lead and an outer lead which is continuously provided and extends to the outside of the inner lead, a part of the outer lead is a part of the other outer lead. It is characterized by being formed with a width smaller than the portion.

A second means is a method of manufacturing a semiconductor device, in which a plurality of outer leads extended from a semiconductor component are connected to a predetermined substrate, with a width smaller than the other parts of the outer lead. The outer lead is connected to the substrate by joining the molded portion to the substrate. A third means is characterized in that, in the second means, the outer lead is connected to the substrate for each outer lead.

[0024]

According to this structure, the outer lead can be connected to the substrate by joining the portion of the outer lead formed with a width smaller than the other portions to the substrate.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. The same components as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted. The film carrier 15 of the present invention has a wiring pattern as shown in FIG. This wiring pattern is similar to the conventional example, from the device hole 3 to the four outer lead holes 4 ...
It is composed of a plurality of leads 16 ...

Each lead 16 is composed of an inner lead 16a protruding into the device hole 3 and an outer lead 16b installed on the outer lead hole 4.

The outer lead 16b is, as shown in an enlarged view in FIG. 2 (b), the outer lead holder from above the film carrier 15 between the device hole 3 and the outer lead hole 4. A first outer lead portion A formed with a width larger than the width of the inner lead 16a over a middle portion of the outer lead 4, and the outer lead from inside the outer lead hole 4 The second outer lead portion B is formed over the film carrier 15 outside the hole 4 so as to have a width smaller than that of the first outer lead portion A.

Next, a process of mounting the semiconductor element 7 (manufacturing a semiconductor device) using the film carrier 15 will be described. First, the semiconductor element 7 is placed in the device hall shown in FIG. 1 by the same operation as the conventional example (see FIG. 7).
Will be installed. That is, the mounting of the semiconductor element 7 is
As shown in FIG. 2, the tip portion of the inner lead 16a protruding into the device hole 3 and the electrode 7a of the semiconductor element 7 are integrated by using a capillary 10 shown by a chain double-dashed line in the figure. This is performed by a single point method in which each set is individually bonded (inner lead bonding).

When the inner lead bonding is completed, the film carrier 15 is sent to a potting step (not shown). In this potting step, a liquid resin is applied to the semiconductor element 7 that has been subjected to the inner lead bonding, and so-called resin sealing is performed.

Then, the film carrier 15 is sent to a mold device (not shown) and punched along the alternate long and short dash line shown in FIG. The punched parts are taken out from the film carrier 15 as one TAB part.

Next, the TAB component is the above outer layer.
It is sent to a molding step of molding the terminal 16b into an external terminal shape. In this step, the first outer lead 16b
The outer lead portion A of FIG.
As shown in (1), it is bent vertically and then horizontally again. As a result, the outer lead 16b is formed into a gull wing-shaped external terminal.

At this time, the second outer lead portion B is provided on the horizontal portion of the lower end of the outer lead 16b by the first outer lead portion B.
A portion formed with a width smaller than the outer lead portion A is located.

In this way, the outer lead 16b is formed.
When the molding of the TAB part is completed, the TAB part is
It is mounted (outer lead bonding) on the substrate shown by 2.

First, the TAB component is transferred onto the substrate 12. This TAB component is the outer lead 16 described above.
The lower horizontal part (second outer lead part B) of b is placed on the substrate 12 in a state of being brought into contact with the electrode pad 19 of the wiring pattern provided on the substrate 12.

Then, the portion of the second outer lead portion B of the outer lead 16b is pressed toward the electrode pad 19 by the capillary shown in FIG. 14 to apply ultrasonic vibration. By performing such an operation for all outer leads 16b of this TAB component, each outer lead 1
6b and the electrode pad 19 are individually joined one by one.

Further, this outer lead bonding is
The bonding is performed under the bonding conditions (pressure, heating temperature, ultrasonic wave application time) suitable for the width of the second outer lead portion B. For example, when the width of the second outer lead portion B is substantially equal to the width of the inner lead 16a, the outer lead bonding is performed under the same bonding conditions as the inner lead bonding. You can

According to this structure, the following effects can be obtained. First of all, the outer lead 16b joined to the electrode pad 19 of the substrate 12 is provided with a second outer lead portion having a width smaller than a portion of the outer lead 16b bent like a gull wing. Since the second outer lead portion B is provided and is connected to the electrode pad 19 by pressing the second outer lead portion B, the pressure applied during outer lead bonding can be reduced and the damage of the substrate 12 can be effectively performed. There is an effect that can be prevented.

The bent portion of the outer lead 16b, that is, the first outer lead portion A, is the inner portion.
Since it is formed with a width larger than that of the lead 16a to improve the rigidity, stable bending can be performed, and an external terminal having a good shape can be formed.

Secondly, since the width of the second outer lead portion B joined to the substrate 12 of the outer lead 16b is made small, the amount of energy required for bonding can be made small. As a result, the amount of heating during bonding can be reduced, and it is not necessary to heat to a high temperature. Therefore, the film carrier 15 is less likely to expand due to thermal expansion, and high-precision and high-quality bonding can be performed. Further, since the heating device can be downsized, there is an effect that the device can be simplified and downsized.

At the same time, since the ultrasonic wave application time, that is, the time required for bonding, can be shortened, the damage to the bonding portion can be reduced and the semiconductor device can be manufactured at higher speed. .

Next, a second embodiment will be described with reference to FIG. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. The film carrier 15 'of the second embodiment is the same as the second embodiment of the first embodiment.
On the outer side of the outer lead portion B, a third outer lead portion C having a width larger than that of the second outer lead portion B is provided.

Even with this structure, the capillary 14
By contacting with the second bonding portion B to perform bonding, it is possible to obtain substantially the same effect as that of the first embodiment.

According to this structure, the third
The portion of the outer lead portion C located outside the outer lead hole 4 can be used as a test pad. This has the effect of easily performing an electrical test of the TAB component on the film carrier 15 '.

Next, a third embodiment will be described with reference to FIGS. 4 and 5. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. In the film carrier 15 ″ according to the third embodiment, the width of the second outer lead portion B is set to 1/2 or less of the width of the first outer lead portion A, and The outer lead portion B is formed continuously with one end in the width direction of the first outer lead portion A.

If the TAB component is molded by using such a film carrier 15 ″, as shown in FIG. 5, when the TAB component is mounted in two layers, the packaging can be performed with higher density. effective.

That is, the TAB in which the second outer lead portion B is provided at one end side in the width direction of the first outer lead portion A.
Using a component (FIG. 4) and a TAB component in which the second outer lead portion B is provided on the other widthwise end side of the first outer lead portion A, as shown in FIG. The two outer leads 16b, 16b can be connected to the range where only the outer leads can be connected, which has the effect of increasing the packaging density.

The present invention is not limited to the above-mentioned embodiment, but can be variously modified without changing the gist of the invention. For example, in the above-described embodiment, the width of the second outer lead portion B is set to be substantially the same as the width of the inner lead 16a, but the width is not limited to this. At least, it is sufficient that the width is smaller than the width of the first outer lead portion A, and in particular, the width can be set so that the pressing force of the capillary 14 is not more than the allowable pressing force of the substrate 12. It is good.

The present invention also provides a multi-chip module.
It is still effective when manufacturing That is, when manufacturing a multi-chip module, it is necessary to carry out outer bonding of a plurality of semiconductor components of different types, but the above-mentioned outer lead portion B of the outer leads of all the semiconductor components is If the widths are unified to the same width, it is possible to perform bonding under the same bonding tool and under the same conditions even when the above-mentioned semiconductor components of different types are outer-bonded. Therefore, it is not necessary to replace the bonding tool for each semiconductor element, and there is an effect that condition management at the time of manufacturing the multi-chip module can be simplified.

Further, in the above-mentioned one embodiment, the outer-layer is
As a bonding method for bonding the board 16 to the substrate 12,
Although the single point bonding method was used, it is not limited to this. For example, by using a gang bonding method, all the outer leads 16b ...
You may make it join to the two electrode pads 19 ... collectively.

[0050]

As described above, the first structure of the present invention is a flexible base film, a plurality of inner leads provided on the base film, and a plurality of inner leads. Inner
In a film carrier comprising a lead and an outer lead which is continuously provided and extends to the outside of the inner lead, a part of the outer lead is a part of the other outer lead. It is formed with a width smaller than the part.

The second structure is a method of manufacturing a semiconductor device in which a plurality of outer leads extended from a semiconductor component are connected to a predetermined substrate, and the width is smaller than that of the other parts of the outer lead. The outer lead is connected to the substrate by joining the molded portion to the substrate.

The third structure is the same as the above-mentioned second means.
The outer leads are connected to the substrate for each of the outer leads. According to such a configuration, since the pressing force and the bonding energy required for the outer bonding can be reduced, the substrate on which the semiconductor component is mounted is not damaged, and the device is not enlarged. The semiconductor device can be manufactured at high speed.

When a plurality of semiconductor components of different types, such as a multi-chip module, are outer-bonded, if the width of a part of the outer lead is unified, each semiconductor is There is no need to replace the bonding tool for each part, which has the effect of simplifying the management of bonding conditions.

[Brief description of drawings]

FIG. 1A is a schematic plan view showing an embodiment of the present invention, and FIG. 1B is a plan view showing an enlarged main part.

2 is a front view and a top view showing the connection between the inner lead and the outer lead. FIG.

FIG. 3 is an enlarged plan view showing a main part of the second embodiment.

FIG. 4 is an enlarged plan view showing an essential part of the third embodiment.

FIG. 5 is a plan view and a top view showing the outer lead connection.

FIG. 6A is a schematic plan view showing a conventional example, and FIG.
The top view which expands and shows a part.

7A is a front view showing an inner lead bonding step, and FIG. 7B is a front view showing an outer lead bonding step.

[Explanation of symbols]

15 ... Film carrier, 2 ... Base film, 3 ... Device hole, 16 ... Lead, 16a ... Inner reel
, 16b ... Outer lead, A ... First outer lead (other part of outer lead), B ... Second outer lead (part of outer lead).

Claims (3)

[Claims] 1. A flexible base film, a plurality of inner leads provided on the base film, and a plurality of inner leads provided continuously with the inner lead. A film carrier having an outer lead extended to the outside of the lead, characterized in that a part of the outer lead is formed with a width smaller than the other parts of the outer lead. And film carrier. 2. A method of manufacturing a semiconductor device for connecting a plurality of outer leads extending from a semiconductor component to a predetermined substrate, wherein the outer lead is formed to have a smaller width than other portions. Is joined to the substrate to connect the outer lead to the substrate. 3. The outer lead is connected to the substrate for each of the outer leads.
A method for manufacturing a semiconductor device as described above.