JPH0762250B2 - Vacuum processing device - Google Patents
Vacuum processing deviceInfo
- Publication number
- JPH0762250B2 JPH0762250B2 JP2258340A JP25834090A JPH0762250B2 JP H0762250 B2 JPH0762250 B2 JP H0762250B2 JP 2258340 A JP2258340 A JP 2258340A JP 25834090 A JP25834090 A JP 25834090A JP H0762250 B2 JPH0762250 B2 JP H0762250B2
- Authority
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- Japan
- Prior art keywords
- chamber
- processing chamber
- valve
- metal block
- chambers
- Prior art date
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Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） この発明は、スパッタリング装置やエッチング装置等と
して使用される真空処理装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to an improvement in a vacuum processing apparatus used as a sputtering apparatus, an etching apparatus, or the like.
（従来の技術） 従来、液晶表示板等の製造では、スパッタリングにより
ガラス基板面に透明電極材料であるIn2O3−SnO2（イン
ジューム−シン−オキサイド．以下ITOと略称する）薄
膜が形成され、そのスパッタ成膜には第３図に示す真空
処理装置が使用される。(Prior Art) Conventionally, in the manufacturing of liquid crystal display panels, etc., a thin film of In 2 O 3 —SnO 2 (indium-syn-oxide; hereinafter abbreviated as ITO), which is a transparent electrode material, is formed on the surface of a glass substrate by sputtering. The vacuum processing apparatus shown in FIG. 3 is used for the sputtering film formation.
即ち、処理室１は、スパッタリング成膜を作る真空容器
からなる成膜室により構成され、その処理室１の左右両
側の側壁には、隔離バルブ11,12を介して予備排気室と
しての予備室2,3が設けられている。That is, the processing chamber 1 is composed of a film forming chamber made of a vacuum container for forming a sputtering film, and on the left and right side walls of the processing chamber 1 are preparatory chambers as preparatory exhaust chambers via isolation valves 11 and 12. A few are provided.
第３図は、基板４が、ホルダー4aとともに処理室１内の
支持機構５にセットされた状態を示しているが、基板４
はまず開閉バルブ21を介して一方の予備室２に搬入さ
れ、排気孔22により予備排気された後、隔離バルブ11か
ら処理室内１に搬送され、スパッタ成膜が行われる。FIG. 3 shows a state in which the substrate 4 is set on the support mechanism 5 in the processing chamber 1 together with the holder 4a.
First, it is carried into one of the preliminary chambers 2 via the opening / closing valve 21, preliminarily evacuated by the exhaust hole 22, and then is conveyed from the isolation valve 11 into the processing chamber 1 to perform sputter film formation.
スパッタ成膜後の基板４は、予め排気孔32により排気さ
れた他方の予備室３に隔離バルブ12を介して搬送され、
隔離バルブ12が閉じられた後、図示しない気体導入口か
ら窒素などの気体が吸入され、大気圧まだ昇圧された
後、開閉バルブ31から外部に取出される。勿論、基板４
を保持したホルダー4aの一連の搬送動作は各開閉バルブ
21,31及び隔離バルブ11,12の動作並びに処理室１及び予
備室2,3の吸排気操作と連動するものであり、これらは
自動的に又は手動により行われる。The substrate 4 after the sputter film formation is transferred via the isolation valve 12 to the other preliminary chamber 3 that has been exhausted in advance by the exhaust hole 32,
After the isolation valve 12 is closed, a gas such as nitrogen is sucked from a gas inlet (not shown), the atmospheric pressure is still raised, and then the gas is taken out from the open / close valve 31. Of course, substrate 4
A series of transfer operations of the holder 4a holding the
It is linked with the operation of 21, 31 and isolation valves 11, 12 and the intake / exhaust operation of the processing chamber 1 and the auxiliary chambers 2, 3, which are performed automatically or manually.
なお、処理室１内には、基板４を加熱する加熱装置4bが
設けられるとともに、熱媒体循環管13から成膜に必要な
アルゴンガス等を含む気体が流入され、例えば0.3［Pa
（パスカル）］程度の圧力に設定される。図示しないが
設定圧力調節用に圧力監視装置が設けられるとともに、
処理室１内の放電電極14には電源15からの電圧印加によ
って、電極14の上面に載置されたターゲット16上の空間
に放電電界が形成される。また、電極14内には、永久磁
石51が鉄等の磁性体52上に設置収納されている。そこ
で、ターゲット16がアルゴンガス分子によりたたかれス
パッタリング作用が起り、基板４表面にターゲット16の
材料を主成分とした膜が形成されるものである。In addition, a heating device 4b for heating the substrate 4 is provided in the processing chamber 1, and a gas containing an argon gas or the like necessary for film formation is flown in from the heat medium circulation pipe 13 to, for example, 0.3 [Pa
(Pascal)]. Although not shown, a pressure monitoring device is provided for adjusting the set pressure,
A voltage is applied from the power supply 15 to the discharge electrode 14 in the processing chamber 1 to form a discharge electric field in the space above the target 16 placed on the upper surface of the electrode 14. Further, in the electrode 14, a permanent magnet 51 is installed and housed on a magnetic body 52 such as iron. Therefore, the target 16 is hit by argon gas molecules to cause a sputtering action, and a film containing the material of the target 16 as a main component is formed on the surface of the substrate 4.
ところで、上記従来の真空処理装置は、中央の処理室１
とこれに隣接して配置された予備室2,3とは夫々独立し
た容器で構成され、夫々１個の隔離バルブ11,12を通し
て互いに連通するように組立て構成されている。By the way, the above-mentioned conventional vacuum processing apparatus has a central processing chamber 1
The preparatory chambers 2 and 3 arranged adjacent thereto and the preparatory chambers 2 and 3 are respectively configured as independent containers, and are assembled and configured to communicate with each other through the respective isolation valves 11 and 12.
しかし、処理室１及び予備室2,3は夫々独立して吸排気
操作されるが、相互間は別容器として夫々独立して構成
されているから、例えば処理室１内のガスは搬入口11a,
搬出口12aの開口部から予備室2,3の外壁に沿って漏れる
欠点があった。このことは、処理室１を高真空にしよう
としたときに大気の進入あることをも意味するから、吸
排気操作の効率を著しく低下させるものであった。However, although the processing chamber 1 and the preparatory chambers 2 and 3 are independently sucked and exhausted, the processing chamber 1 and the preparatory chambers 2 and 3 are independently configured as separate containers. ,
There is a drawback that the leakage occurs along the outer walls of the auxiliary chambers 2 and 3 from the opening of the carry-out port 12a. This also means that the atmosphere enters when the processing chamber 1 is made to have a high vacuum, so that the efficiency of the intake / exhaust operation is significantly reduced.
また、各容器が溶接により組立てらているから、溶接箇
所のコーナー部分では、処理操作後の洗浄時等でも汚れ
が落ちにくく依然として残存する等の欠点があった。In addition, since each container is assembled by welding, there is a drawback in that the corner portion of the welded portion is less likely to be soiled even when washed after the processing operation and remains.
上記はスパッタリング装置を例に説明したが、処理室を
中央にして左右に予備室及び弁室を構成接続したエッチ
ング装置でも同様である。The above description has been made by taking the sputtering apparatus as an example, but the same applies to an etching apparatus in which a preparatory chamber and a valve chamber are connected to the left and right with the processing chamber as the center.
また、隔離バルブ11,12の取付け位置を、たとえ処理室
１側に変更したとしても、あるいは、双方に同時に設け
たとしても、処理室１と予備室2,3との間に大気に連な
る空隙が僅かでも生じたりすることには変わりなく、こ
の複数の真空容器を隣接して使用する構成では避けられ
ない問題であり、改善が要望されていた。Further, even if the mounting positions of the isolation valves 11 and 12 are changed to the processing chamber 1 side or both are provided at the same time, a space communicating with the atmosphere is provided between the processing chamber 1 and the auxiliary chambers 2 and 3. However, there is no problem even in the case where a plurality of vacuum vessels are used adjacent to each other, which is an unavoidable problem, and improvement has been demanded.
（発明の目的） 従来の真空処理装置は、中央の処理室に連なる予備室や
弁室が、夫々独立した容器で構成され、相互の連結部か
ら気密が漏れたり、洗浄時に隙間やコーナーの汚れが残
存する等の欠点があった。(Purpose of the Invention) In a conventional vacuum processing apparatus, a preliminary chamber and a valve chamber connected to a central processing chamber are configured by independent containers, and airtightness leaks from mutual connection parts, and gaps and corners are contaminated during cleaning. There was a defect such as remaining.
この発明は、上記従来の欠点を解消し、気密漏れを防止
できる真空処理装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a vacuum processing apparatus which eliminates the above-mentioned conventional drawbacks and can prevent airtight leakage.
［発明の構成］ （課題を解決するための手段） 本発明は、減圧機構に接続され１つの金属ブロック６で
構成する処理室１と予備室２又は弁室３と，この各室に
取付ける上蓋1c、2a、3aと，前記処理室１と予備室２又
は弁室３の各境界にそれぞれ配置され前記金属ブロック
６の一部である隔壁1a、1bと，この隔壁1a、1b及びその
上部ａ、ａ間に配置される隔離バルブ11、12と，前記隔
壁1a、1bの１表面を構成する傾斜部1d、1dと，この傾斜
部1d、1d並びに前記金属ブロック部分ｅ、ｅ間に配置さ
れ前記隔離バルブ11、12に接触するシリンダ動作機構11
b、12bとを具備し前記隔離バルブの開閉により前記処理
室１内の気密性を制御する点に特徴がある。[Structure of the Invention] (Means for Solving the Problem) The present invention relates to a processing chamber 1 and a preliminary chamber 2 or a valve chamber 3 which are connected to a decompression mechanism and which are composed of one metal block 6, and an upper lid attached to each chamber. 1c, 2a, 3a, partition walls 1a, 1b which are respectively disposed at the boundaries of the processing chamber 1 and the preparatory chamber 2 or the valve chamber 3 and are a part of the metal block 6, and the partition walls 1a, 1b and their upper portions a , A is arranged between the isolation valves 11 and 12 and the inclined portions 1d and 1d forming one surface of the partition walls 1a and 1b and the inclined portions 1d and 1d and the metal block portions e and e. Cylinder operating mechanism 11 that contacts the isolation valves 11 and 12
It is characterized by including b and 12b and controlling the airtightness in the processing chamber 1 by opening and closing the isolation valve.
（作用） 上記のように、この発明による真空処理装置は、処理室
及びこれに連なる予備室等を、１つの金属ブロックの切
削加工により構成したので、処理室と予備室等との間は
両者に共通して一体化された側壁となるので、接触構成
部分がなくなり、気密漏れは回避されるとともに、コー
ナー部分が少なくなるので洗浄が容易となる。(Operation) As described above, in the vacuum processing apparatus according to the present invention, the processing chamber and the preliminary chamber connected to the processing chamber are formed by cutting one metal block. Since the side wall is integrated in common, the contact components are eliminated, airtight leakage is avoided, and the corners are reduced, which facilitates cleaning.
（実施例） 以下、第１図及び第２図を参照し、この発明による真空
処理装置の実施例を説明する。なお、第３図に示した従
来の真空処理装置と同一構成には同一符号を付して詳細
な説明は省略する。(Embodiment) An embodiment of the vacuum processing apparatus according to the present invention will be described below with reference to FIGS. 1 and 2. The same components as those of the conventional vacuum processing apparatus shown in FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted.
第１図はこの発明による真空処理装置の第１の実施例を
示すもので、特にスパッタリング装置に適応した場合を
説明する断面図である。FIG. 1 shows a first embodiment of a vacuum processing apparatus according to the present invention, and is a sectional view for explaining a case particularly adapted to a sputtering apparatus.
即ち、成膜室をなす処理室１及び左右の予備室2,3は、
アルミニューム材からなる１つの金属ブロック６の切削
加工により一体として形成されている。That is, the processing chamber 1 forming the film forming chamber and the left and right preliminary chambers 2 and 3 are
It is integrally formed by cutting one metal block 6 made of an aluminum material.
従って、処理室１と各予備室2,3は共通した単一の金属
ブロック６の切削形成によるから、これら各室間の隔壁
1a,1bは互いに共通した１個の側壁であり、従来のよう
に大気に接した接続部がなく、気密漏れの恐れがなくな
った。Therefore, since the processing chamber 1 and the preparatory chambers 2 and 3 are formed by cutting a single metal block 6 which is common, a partition wall between these chambers is formed.
1a and 1b are one side wall common to each other, and there is no connecting portion in contact with the atmosphere as in the conventional case, and there is no fear of airtight leakage.
また、切削加工はコーナー部分は丸みを帯びたものとな
るので、スパッタリング処理後の洗浄もやりやすくな
り、汚れが残存するような欠点は解消される。In addition, since the corners of the cutting process are rounded, cleaning after the sputtering process can be easily performed, and the defect that stains remain can be eliminated.
なお、1c,2a,3aは夫々処理室1,予備室2,3を覆う上蓋を
示し、11b,12bは夫々隔離バルブ11,12開閉用のシリンダ
である。Reference numerals 1c, 2a and 3a denote upper covers for covering the processing chamber 1 and the preparatory chambers 2 and 3, respectively, and 11b and 12b are cylinders for opening and closing isolation valves 11 and 12, respectively.
前記のように共通した側壁を構成する隔壁1a、1bは、第
１図に示すように環状に形成されており、断面図には上
部ａならびに下部を構成する隔壁1a、1bが記載される。
この両部間には、隔離バルブ11、12が配置され、更に隔
壁1a、1bの表面部分には傾斜部1d、1dが設置され、これ
と金属ブロック６部分ｅ間にシリンダ動作機構11b、12b
が配置される。The partition walls 1a and 1b constituting the common side wall as described above are formed in an annular shape as shown in FIG. 1, and the sectional view shows the partition walls 1a and 1b constituting the upper part a and the lower part.
Isolation valves 11 and 12 are arranged between these two parts, and inclined portions 1d and 1d are further installed on the surface portions of the partition walls 1a and 1b, and the cylinder operating mechanisms 11b and 12b are provided between them and the metal block 6 portion e.
Are placed.
従って、基板４が処理室１内に順次搬送され、スパッタ
処理が行われるが、この処理過程の中で、処理室1,予備
室2,3の各室において一連の吸排気操作が行われても、
処理室１と各予備室2,3との間に外気に通じる間隙がな
いから、処理操作の効率化と高真空化が実現できる。Therefore, the substrate 4 is sequentially transferred into the processing chamber 1 and sputtered, and in this process, a series of intake / exhaust operations are performed in each of the processing chamber 1, the auxiliary chambers 2 and 3. Also,
Since there is no gap between the processing chamber 1 and each of the preliminary chambers 2 and 3 that communicates with the outside air, the efficiency of the processing operation and the high vacuum can be realized.
上記第１の実施例は、真空処理装置として、スパッタリ
ング装置の場合を例に説明したが、中央の処理室１に隣
接して一方に搬入搬出用の予備室２を、他方に処理室１
の排気用弁室を構成配置したエッチング装置にも適用さ
れる。In the above-mentioned first embodiment, the case where the sputtering apparatus is used as the vacuum processing apparatus has been described as an example. However, adjacent to the central processing chamber 1, the preliminary chamber 2 for carrying in and out is provided on one side and the processing chamber 1 on the other side.
It is also applied to the etching apparatus in which the exhaust valve chamber is configured and arranged.
即ち、第２図はこの発明による真空処理装置の第２の実
施例を示す断面図で、エッチング装置に適用した場合を
示し、予備室2,処理室1,及び弁室７が順次配列されて構
成されている。That is, FIG. 2 is a sectional view showing a second embodiment of the vacuum processing apparatus according to the present invention, showing a case where it is applied to an etching apparatus, in which a preparatory chamber 2, a processing chamber 1, and a valve chamber 7 are sequentially arranged. It is configured.
エッチング処理操作の手順は、周知の通りであるから特
に説明は省略するが、この実施例においても、１個のア
ルミニューム材からなる金属ブロック６を切削加工によ
って、エッチングの処理室1,基板４の搬入搬出用の予備
室２及び弁室７を一体的に形成し、各室間の側壁1a,1b
を共通化したことによって、第１の実施例と同様に気密
性が確保される。この場合、弁室７は隔離バルブ12の開
閉操作によって、処理室１を排気口71から排気処理する
ように構成されており,7aは弁室用上蓋である。The procedure of the etching process operation is well known, so that the description thereof is omitted. However, also in this embodiment, the etching process chamber 1, the substrate 4 are formed by cutting the metal block 6 made of one aluminum material. A spare chamber 2 for loading and unloading and a valve chamber 7 are integrally formed, and side walls 1a, 1b between the chambers are formed.
The airtightness is ensured as in the first embodiment by sharing the above. In this case, the valve chamber 7 is configured to exhaust the processing chamber 1 from the exhaust port 71 by opening / closing the isolation valve 12, and 7a is an upper lid for the valve chamber.
なお、上記各実施例では、中央の処理室１に連なる左右
の予備室2,3又は弁室７を共に共通にして、１つの金属
ブロック６内に構成したが、場合によっては、いずれか
一方の予備室２又は３あるいは弁室７と中央の処理室１
とのみを共通の切削加工によって形成し、他の予備室
（３又は２）及び弁室７は従来のように独立した容器と
して連結構成するようにしても良い。In each of the above embodiments, the left and right spare chambers 2 and 3 connected to the central processing chamber 1 or the valve chamber 7 are made common in one metal block 6, but depending on the case, either one of them may be used. Spare chamber 2 or 3 or valve chamber 7 and central processing chamber 1
It is also possible that only and are formed by a common cutting process, and the other preliminary chamber (3 or 2) and the valve chamber 7 are connected and configured as independent containers as in the conventional case.
いずれにしても、この発明による真空処理装置は、処理
室１に隣接する予備室または弁室を１個の共通した金属
ブロックの切削加工によって形成したので、従来の欠点
とされた各室接続部の気密漏れや、洗浄時の汚れ残り等
は解消され、より高い真空度をより容易に実現できる利
点が得られるものである。In any case, in the vacuum processing apparatus according to the present invention, the preliminary chamber or the valve chamber adjacent to the processing chamber 1 is formed by cutting one common metal block. The air-tightness leak, the stain residue at the time of cleaning, etc. are eliminated, and an advantage that a higher vacuum degree can be realized more easily can be obtained.
［発明の効果］ この発明による真空処理装置は、複数の真空室間をより
気密漏れ等が少なくなるように構成され、特に半導体製
造装置等に好適であり実用上の効果大である。[Effects of the Invention] The vacuum processing apparatus according to the present invention is configured so that airtight leaks and the like between a plurality of vacuum chambers are further reduced, and is particularly suitable for a semiconductor manufacturing apparatus and the like and has a large practical effect.
第１図はこの発明による真空処理装置の第１の実施例を
示す断面図、第２図はこの発明による真空処理装置の第
２の実施例を示す断面図、第３図は従来の真空処理装置
を示す断面図である。 １……処理室、11,12……隔壁バルブ、1a,1b……側壁、
15……電源、16……ターゲット、2,3……予備室、４…
…基板、4a……ホルダー、６……金属ブロック、７……
弁室。1 is a sectional view showing a first embodiment of a vacuum processing apparatus according to the present invention, FIG. 2 is a sectional view showing a second embodiment of a vacuum processing apparatus according to the present invention, and FIG. 3 is a conventional vacuum processing. It is sectional drawing which shows an apparatus. 1 ... Processing chamber, 11, 12 ... Partition valves, 1a, 1b ... Side wall,
15 …… power supply, 16 …… target, 2, 3 …… spare room, 4…
… Substrate, 4a …… Holder, 6 …… Metal block, 7 ……
Valve chamber.
Claims (1)
構成する処理室と予備室又は弁室と，前記各室に取付け
る上蓋と，前記処理室と予備室又は弁室の各境界にそれ
ぞれ配置され前記金属ブロックの一部である隔壁と，こ
の隔壁及び前記金属ブロックのの上部間に配置される隔
離バルブと，前記の隔壁の１表面を構成する傾斜部と，
前記傾斜部並びに前記金属ブロック部分間に配置され前
記隔離バルブに接触するシリンダ動作機構とを具備し，
前記隔離バルブの開閉により前記処理室内の気密性を制
御することを特徴とする真空処理装置1. A processing chamber and a preparatory chamber or a valve chamber which are connected to a decompression mechanism and which are composed of one metal block, an upper lid attached to each of the chambers, and a treatment chamber and the preparatory chamber or the valve chamber, which are arranged at respective boundaries. A partition that is a part of the metal block, an isolation valve that is arranged between the partition and an upper part of the metal block, and an inclined portion that forms one surface of the partition.
A cylinder operating mechanism disposed between the inclined portion and the metal block portion and contacting the isolation valve;
A vacuum processing apparatus characterized by controlling the airtightness of the processing chamber by opening and closing the isolation valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2258340A JPH0762250B2 (en) | 1990-09-27 | 1990-09-27 | Vacuum processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2258340A JPH0762250B2 (en) | 1990-09-27 | 1990-09-27 | Vacuum processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04136159A JPH04136159A (en) | 1992-05-11 |
| JPH0762250B2 true JPH0762250B2 (en) | 1995-07-05 |
Family
ID=17318884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2258340A Expired - Fee Related JPH0762250B2 (en) | 1990-09-27 | 1990-09-27 | Vacuum processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0762250B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE9407482U1 (en) * | 1994-05-05 | 1994-10-06 | Balzers und Leybold Deutschland Holding AG, 63450 Hanau | Functional device for a vacuum system for the treatment of disc-shaped workpieces |
| JP2007270188A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Film forming equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595734U (en) * | 1982-07-02 | 1984-01-14 | 日産自動車株式会社 | Protection device for exhaust turbine drive supercharging system |
| JPS6380802A (en) * | 1986-09-25 | 1988-04-11 | Kurita Water Ind Ltd | Flat membrane type extractor |
| JPS63209704A (en) * | 1987-02-27 | 1988-08-31 | Kurita Water Ind Ltd | Flat-membrane type extractor |
-
1990
- 1990-09-27 JP JP2258340A patent/JPH0762250B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04136159A (en) | 1992-05-11 |
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