JPH0753295A - Quartz glass crucible - Google Patents
Quartz glass crucibleInfo
- Publication number
- JPH0753295A JPH0753295A JP21686493A JP21686493A JPH0753295A JP H0753295 A JPH0753295 A JP H0753295A JP 21686493 A JP21686493 A JP 21686493A JP 21686493 A JP21686493 A JP 21686493A JP H0753295 A JPH0753295 A JP H0753295A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- crucible
- glass crucible
- single crystal
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Surface Treatment Of Glass (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、黒鉛ルツボと接触す
るＳｉ単結晶引上げ用の石英ガラスルツボに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass crucible for pulling a Si single crystal which comes into contact with a graphite crucible.
【０００２】[0002]
【従来の技術】石英ガラスルツボは黒鉛ルツボの内側に
配置され、Ｓｉ単結晶の引上げに用いられる。2. Description of the Related Art A quartz glass crucible is arranged inside a graphite crucible and is used for pulling a Si single crystal.
【０００３】石英ガラスルツボは石英粉を成形溶融後
に、ルツボ外面に付着した未溶融粉を一部除去すること
によって製造される。従来、外面に付着した未溶融粉
は、必要に応じて石英ガラスルツボの外面全体を高圧液
体でブラスティングするか、又はルツボの円筒部（スト
レート部）外面のみを旋盤等で加工することによって除
去している。A quartz glass crucible is manufactured by forming and melting quartz powder and then partially removing unmelted powder adhering to the outer surface of the crucible. Conventionally, unmelted powder adhering to the outer surface is removed by blasting the entire outer surface of the quartz glass crucible with high-pressure liquid, or by processing only the outer surface of the cylindrical part (straight part) of the crucible with a lathe etc. is doing.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、前者の
方法では、石英ガラスルツボ外面の中心線平均粗さが１
００μｍ以上になってしまい、寸法精度も充分ではなか
った。他方、黒鉛ルツボは高精度機械加工によって表面
の仕上げが行われる。このような表面粗さ及び寸法精度
の違いによって、両者の接合面には不均一な隙間が生じ
ることが多かった。そして、Ｓｉ単結晶を引上げる際
に、高温になって軟化した石英ガラスルツボが変形し、
溶融Ｓｉ液面に振動が生じることがあった。その場合に
は、引きあげたＳｉ単結晶の特性に悪影響が生じ、歩留
が低下していた。However, in the former method, the center line average roughness of the outer surface of the quartz glass crucible is 1 or less.
It was over 100 μm, and the dimensional accuracy was not sufficient. On the other hand, the surface of the graphite crucible is finished by high precision machining. Due to such differences in surface roughness and dimensional accuracy, non-uniform gaps were often created on the joint surfaces of the two. When the Si single crystal is pulled up, the quartz glass crucible softened at high temperature is deformed,
Vibration may occur on the liquid surface of the molten Si. In that case, the characteristics of the pulled Si single crystal were adversely affected and the yield was lowered.
【０００５】また、後者の方法では、ストレート部（円
筒部）の寸法精度は充分であるが、それ以外の部分でカ
ーボンルツボとの間にやはり隙間が生じ、同様の液面振
動が発生する場合があった。また、ストレート部とそれ
以外の部分の面粗さの差が大きいため、加熱時に両方の
部分での熱線透過率が異なって溶融Ｓｉの温度制御に悪
影響を与えていた。In the latter method, the dimensional accuracy of the straight portion (cylindrical portion) is sufficient, but a gap is still formed between the straight portion (cylindrical portion) and the carbon crucible, and similar liquid level vibration occurs. was there. Further, since the difference in surface roughness between the straight portion and the other portion is large, the heat ray transmittances of both portions differ during heating, which adversely affects the temperature control of the molten Si.
【０００６】いずれにせよ、特に大口径の石英ガラスル
ツボにおいて前述の問題が生じ易く、Ｓｉ単結晶引上げ
の歩留り（単結晶化率）が低下していた。In any case, especially in a large-diameter quartz glass crucible, the above-mentioned problem is likely to occur, and the yield (single crystallization rate) of pulling Si single crystal is lowered.
【０００７】本発明は、前述のような従来技術の問題点
を解消して、Ｓｉ単結晶引上げの歩留り（単結晶化率）
を向上させることが可能な石英ガラスルツボを提供する
ことを目的としている。The present invention solves the problems of the prior art as described above, and improves the yield of Si single crystal pulling (single crystallization rate).
It is an object of the present invention to provide a quartz glass crucible capable of improving the temperature.
【０００８】[0008]
【課題を解決するための手段】この発明は黒鉛ルツボと
接触するＳｉ単結晶引上げ用の石英ガラスルツボの少な
くとも底部が不透明であり、かつ該石英ガラスルツボの
外面全体の中心線平均粗さＲａが０．１μｍ〜５０μｍ
であることを特徴とする石英ガラスルツボを要旨として
いる。According to the present invention, at least the bottom of a quartz glass crucible for pulling a Si single crystal in contact with a graphite crucible is opaque, and the center line average roughness Ra of the entire outer surface of the quartz glass crucible is 0.1 μm to 50 μm
The main point is a quartz glass crucible characterized by
【０００９】[0009]
【実施例】以下、図面を参照して本発明の好適な実施例
を説明する。図１は本発明による石英ガラスルツボを製
造するための研削工程を示す図、図２は図１の研削砥石
を示す断面図である。なお、研削を広義に解釈し、研磨
も研削に含まれるものとする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a view showing a grinding step for manufacturing a quartz glass crucible according to the present invention, and FIG. 2 is a sectional view showing the grinding wheel of FIG. It should be noted that the term "grinding" is broadly interpreted, and the term "polishing" is also included in the term "grinding".
【００１０】図１の石英ガラスルツボは、通常の回転溶
融法で石英粉を溶融成形したものである。これにより、
全体的に微小な気泡を多数含む不透明な石英ガラスルツ
ボが形成される。なお、この石英ガラスルツボの内面に
は透明層が形成される。また、その外面には未溶融石英
粉が付着している。そこで、図１に示す研削装置１０に
よってルツボの外面全体を研削する。The quartz glass crucible shown in FIG. 1 is obtained by melting and molding quartz powder by a usual rotary melting method. This allows
An opaque quartz glass crucible containing a large number of minute bubbles is formed as a whole. A transparent layer is formed on the inner surface of the quartz glass crucible. Further, unmelted quartz powder adheres to the outer surface thereof. Therefore, the entire outer surface of the crucible is ground by the grinding device 10 shown in FIG.
【００１１】研削装置１０は、ベース１１に設けられた
ディスク型の回転テーブル１２を有している。回転テー
ブル１２には、その回転軸の延長線上にセンタ押え１５
が設けられている。センタ押え１５の先端にはルツボ底
部の中央に当接するゴム１５ａが固定されている。The grinding device 10 has a disk-shaped rotary table 12 provided on a base 11. The center table 15 is attached to the rotary table 12 on the extension line of the rotary shaft.
Is provided. A rubber 15a that is in contact with the center of the bottom of the crucible is fixed to the tip of the center presser 15.
【００１２】センタ押えの中程にはストレート部上方チ
ャック１３が固定されている。ストレート部上方チャッ
ク１３はルツボの大きさに合わせて径を変えるこが可能
であり、その外端部にはルツボのストレート部内周に当
接するゴム１３ａが配置されている。A straight upper chuck 13 is fixed in the middle of the center presser. The diameter of the upper chuck 13 of the straight portion can be changed according to the size of the crucible, and a rubber 13a that abuts on the inner circumference of the straight portion of the crucible is arranged at the outer end portion thereof.
【００１３】回転テーブル１２の上面には、ストレート
部下方チャック１４が配置されている。ストレート部下
方チャック１４もルツボの大きさに合わせて径を変える
ことが可能であり、その外端部にはルツボのストレート
部内周に当接するゴム１４ａが配置されている。A straight portion lower chuck 14 is arranged on the upper surface of the rotary table 12. The diameter of the straight portion lower chuck 14 can also be changed according to the size of the crucible, and a rubber 14a that abuts on the inner circumference of the straight portion of the crucible is arranged at the outer end portion thereof.
【００１４】研削装置１０は、砥石回転移動手段２１を
備えている。砥石回転移動手段２１は高速回転可能なス
ピンドルを有している。スピンドルには研削砥石１６を
設定することができる。ヘッド２１は、図１の図平面内
で定めた所定経路（Ａ〜Ｅ）を速度をかえて移動可能で
ある。経路Ａ，Ｂはスピンドルを研削速度（低速）で移
動させ、経路Ｃ〜Ｆはスピンドルを早送りで移動させ
る。The grinding device 10 is provided with a grindstone rotation moving means 21. The grindstone rotation moving means 21 has a spindle that can rotate at high speed. A grinding wheel 16 can be set on the spindle. The head 21 can move at different speeds along a predetermined path (A to E) defined within the plane of FIG. The paths A and B move the spindle at a grinding speed (low speed), and the paths C to F move the spindle at a fast feed.
【００１５】好ましい一例を挙げると、研削砥石１６
は、カップ形のダイヤモンド砥石で、カップ状の台金１
９とその下部外周に着脱可能に設けられた砥石取付部１
７を有している。台金１９はアルミ製であり、砥石取付
部１７は樹脂製である。砥石取付部１７には砥石本体１
８が取付けられている。砥石本体１８は曲率半径がＲの
研削面を有している。すなわち、砥石本体１８の断面形
状は図２では半円形になっている。また、矢印で示した
ように下方が湾曲した１／４円形でもよい。As a preferred example, the grinding wheel 16
Is a cup-shaped diamond whetstone, cup-shaped base metal 1
9 and a grindstone mounting portion 1 detachably provided on the outer periphery of the lower part thereof
Have 7. The base metal 19 is made of aluminum, and the grindstone mounting portion 17 is made of resin. The grindstone body 1 is attached to the grindstone mounting portion 17.
8 is attached. The whetstone body 18 has a ground surface with a radius of curvature R. That is, the cross-sectional shape of the grindstone body 18 is semicircular in FIG. Further, it may be a quarter circle having a curved lower portion as shown by an arrow.
【００１６】さて、図１に示した研削装置１０を用い
て、ルツボ１を低速で回転させ、一方研削砥石１６を高
速回転させつつ経路Ａ，Ｂを移動させて、ルツボの外面
全体の研削を行った。そして、得られた石英ガラスルツ
ボの外面の中心線平均粗さＲａを測定したところ０．１
μｍ〜５０μｍの範囲内であった。また、その寸法精度
を調べたところ、外径は設計寸法５０８ｍｍに対して誤
差が±１ｍｍ以内、肉厚は同じく１１ｍｍに対して誤差
が±１．５ｍｍ以内、外側Ｒ形状は５０８ｍｍに対して
誤差が±１ｍｍ以内、高さは３５６ｍｍに対して誤差が
±２ｍｍ以内であった。Now, using the grinding apparatus 10 shown in FIG. 1, the crucible 1 is rotated at a low speed, while the grinding wheel 16 is rotated at a high speed, and the paths A and B are moved to grind the entire outer surface of the crucible. went. The center line average roughness Ra of the outer surface of the obtained quartz glass crucible was measured and found to be 0.1.
It was in the range of μm to 50 μm. In addition, when the dimensional accuracy was examined, the outer diameter had an error of ± 1 mm with respect to the design dimension of 508 mm, the wall thickness had an error of ± 1.5 mm with respect to 11 mm, and the outer radius had an error of 508 mm. Was within ± 1 mm, and the error was within ± 2 mm with respect to the height of 356 mm.
【００１７】この石英ガラスルツボを用いてＳｉ単結晶
の引上げを行い、歩留りを調べた。その結果、従来のル
ツボを用いた場合に較べて歩留りが約５％向上した。Using this quartz glass crucible, Si single crystals were pulled up and the yield was examined. As a result, the yield was improved by about 5% as compared with the case where the conventional crucible was used.
【００１８】以上述べたように、本発明は石英ガラスル
ツボの外面全体を研削して中心線平均粗さを０．１μｍ
以上５０μｍ以下に調整する構成になっている。ルツボ
外面の中心線平均粗さは、さらに望ましくは１０μｍ以
下に設定し、最適には６μｍ以下に設定する。As described above, according to the present invention, the center line average roughness is 0.1 μm by grinding the entire outer surface of the quartz glass crucible.
The structure is adjusted to 50 μm or less. The center line average roughness of the outer surface of the crucible is more preferably set to 10 μm or less, and optimally set to 6 μm or less.
【００１９】本発明は、例えば石英ガラスルツボのスト
レート部の上方を不透明石英ガラスとし、底部を含む下
方を透明石英ガラスとしたもの、もしくは、この逆にし
たもの等においても効果を奏するものである。The present invention is also effective if, for example, the straight portion of the quartz glass crucible is made of opaque quartz glass and the lower portion including the bottom is made of transparent quartz glass, or vice versa. .
【００２０】[0020]
【発明の効果】本発明の石英ガラスルツボは、黒鉛ルツ
ボと接触するＳｉ単結晶引上げ用の石英ガラスルツボの
少なくとも底部が不透明であり、かつ該石英ガラスルツ
ボの外面全体の中心線平均粗さＲａが０．１μｍ〜５０
μｍになっているので、従来のルツボに較べて表面粗さ
が改善され寸法精度も向上する。According to the quartz glass crucible of the present invention, at least the bottom of the quartz glass crucible for pulling a Si single crystal that comes into contact with the graphite crucible is opaque, and the center line average roughness Ra of the entire outer surface of the quartz glass crucible is Ra. Is 0.1 μm to 50
Since it is μm, the surface roughness is improved and the dimensional accuracy is improved as compared with the conventional crucible.
【００２１】従って、外側に配置する黒鉛ルツボとの接
触状態を良好に保つことができ、ルツボの軟化に起因す
る溶融Ｓｉ液面の振動を防止できる。また、ストレート
部と底部の面粗さがほぼ同一となって、熱線透過率が等
しくなるので、温度制御の精度を向上させることができ
る。Therefore, the contact state with the graphite crucible arranged outside can be kept good, and the vibration of the molten Si liquid surface due to the softening of the crucible can be prevented. Further, since the surface roughness of the straight portion and the surface roughness of the bottom portion are substantially the same and the heat ray transmittance is equal, the accuracy of temperature control can be improved.
【００２２】このため、本発明のガラスルツボを用いる
ことにより、Ｓｉ単結晶の歩留りを従来のルツボに較べ
て大幅に向上させることができる。Therefore, by using the glass crucible of the present invention, the yield of Si single crystal can be significantly improved as compared with the conventional crucible.
【００２３】なお、本発明は前述の実施例に限定されな
い。例えば、研削経路は、図１に示した径路の逆方向で
あってもよい。また石英ガラスルツボの寸法や形状も実
施例におけるものに限らず様々な寸法や形状を採用でき
る。The present invention is not limited to the above embodiment. For example, the grinding path may be in the opposite direction of the path shown in FIG. Further, the size and shape of the quartz glass crucible are not limited to those in the embodiment, and various sizes and shapes can be adopted.
【図１】本発明の石英ガラスルツボを製造する工程を示
す図。FIG. 1 is a diagram showing a process of manufacturing a quartz glass crucible of the present invention.
【図２】図１の研削砥石を示す断面図。FIG. 2 is a sectional view showing the grinding wheel of FIG.
１ 石英ガラスルツボ １０ 研削装置 １１ ベース １２ 回転テーブル １３ ストレート部上方チャック １４ ストレート部下方チャック １５ センタ押え １３ａ，１４ａ，１５ａ ゴム部材 １６ 研削砥石 １７ 砥石取付け部材 １８ 砥石本体 1 Quartz glass crucible 10 Grinding device 11 Base 12 Rotary table 13 Straight part upper chuck 14 Straight part lower chuck 15 Center presser 13a, 14a, 15a Rubber member 16 Grinding grindstone 17 Grinding stone mounting member 18 Grinding stone body
Claims (1)
用の石英ガラスルツボの少なくとも底部が不透明であ
り、かつ該石英ガラスルツボの外面全体の中心線平均粗
さＲａが０．１μｍ〜５０μｍであることを特徴とする
石英ガラスルツボ。1. A quartz glass crucible for pulling a Si single crystal in contact with a graphite crucible has at least a bottom which is opaque, and a center line average roughness Ra of the entire outer surface of the quartz glass crucible is 0.1 μm to 50 μm. A quartz glass crucible characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21686493A JP2962976B2 (en) | 1993-08-10 | 1993-08-10 | Quartz glass crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21686493A JP2962976B2 (en) | 1993-08-10 | 1993-08-10 | Quartz glass crucible |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0753295A true JPH0753295A (en) | 1995-02-28 |
| JP2962976B2 JP2962976B2 (en) | 1999-10-12 |
Family
ID=16695108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21686493A Expired - Fee Related JP2962976B2 (en) | 1993-08-10 | 1993-08-10 | Quartz glass crucible |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2962976B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1024118A2 (en) * | 1999-01-29 | 2000-08-02 | Heraeus Quarzglas GmbH & Co. KG | Large diameter quartz glass crucible for pulling up single crystalline silicon |
| WO2009041685A1 (en) * | 2007-09-28 | 2009-04-02 | Japan Super Quartz Corporation | Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible |
| JP2009286651A (en) * | 2008-05-28 | 2009-12-10 | Japan Siper Quarts Corp | Quartz glass crucible and its manufacturing method |
| JP2010030884A (en) * | 2008-06-30 | 2010-02-12 | Japan Siper Quarts Corp | Quartz glass crucible and method for pulling silicon single crystal with quartz glass crucible |
| US7695787B2 (en) | 2003-03-28 | 2010-04-13 | Japan Super Quartz Corporation | Silica glass crucible |
| WO2016147824A1 (en) * | 2015-03-17 | 2016-09-22 | 住友電気工業株式会社 | Method for producing silicon carbide single crystal |
| JP2020196651A (en) * | 2019-06-04 | 2020-12-10 | クアーズテック株式会社 | Method for manufacturing silica glass crucible |
| KR20210095674A (en) | 2018-12-27 | 2021-08-02 | 가부시키가이샤 사무코 | Quartz glass crucible, manufacturing method of silicon single crystal using same, and infrared transmittance measurement method and manufacturing method of quartz glass crucible |
-
1993
- 1993-08-10 JP JP21686493A patent/JP2962976B2/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1024118A3 (en) * | 1999-01-29 | 2001-10-10 | Heraeus Quarzglas GmbH & Co. KG | Large diameter quartz glass crucible for pulling up single crystalline silicon |
| EP1024118A2 (en) * | 1999-01-29 | 2000-08-02 | Heraeus Quarzglas GmbH & Co. KG | Large diameter quartz glass crucible for pulling up single crystalline silicon |
| US7695787B2 (en) | 2003-03-28 | 2010-04-13 | Japan Super Quartz Corporation | Silica glass crucible |
| US7955511B2 (en) | 2003-03-28 | 2011-06-07 | Japan Super Quartz Corporation | Silica glass crucible |
| JP2009084114A (en) * | 2007-09-28 | 2009-04-23 | Japan Siper Quarts Corp | Quartz glass crucible for pulling silicon single crystal and its manufacturing method |
| WO2009041685A1 (en) * | 2007-09-28 | 2009-04-02 | Japan Super Quartz Corporation | Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible |
| US8871026B2 (en) | 2007-09-28 | 2014-10-28 | Japan Super Quartz Corporation | Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same |
| JP2009286651A (en) * | 2008-05-28 | 2009-12-10 | Japan Siper Quarts Corp | Quartz glass crucible and its manufacturing method |
| JP2010030884A (en) * | 2008-06-30 | 2010-02-12 | Japan Siper Quarts Corp | Quartz glass crucible and method for pulling silicon single crystal with quartz glass crucible |
| WO2016147824A1 (en) * | 2015-03-17 | 2016-09-22 | 住友電気工業株式会社 | Method for producing silicon carbide single crystal |
| KR20210095674A (en) | 2018-12-27 | 2021-08-02 | 가부시키가이샤 사무코 | Quartz glass crucible, manufacturing method of silicon single crystal using same, and infrared transmittance measurement method and manufacturing method of quartz glass crucible |
| DE112019006417B4 (en) | 2018-12-27 | 2024-03-21 | Sumco Corporation | QUARTZ GLASS CRUBLE AND PRODUCTION PROCESS FOR A SILICON SINGLE CRYSTAL |
| US11939695B2 (en) | 2018-12-27 | 2024-03-26 | Sumco Corporation | Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible |
| JP2020196651A (en) * | 2019-06-04 | 2020-12-10 | クアーズテック株式会社 | Method for manufacturing silica glass crucible |
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