JPH0752722B2 - Vertical heat treatment equipment - Google Patents

Vertical heat treatment equipment

Info

Publication number
JPH0752722B2
JPH0752722B2 JP32994688A JP32994688A JPH0752722B2 JP H0752722 B2 JPH0752722 B2 JP H0752722B2 JP 32994688 A JP32994688 A JP 32994688A JP 32994688 A JP32994688 A JP 32994688A JP H0752722 B2 JPH0752722 B2 JP H0752722B2
Authority
JP
Japan
Prior art keywords
heat
cylinder
reaction container
gas
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32994688A
Other languages
Japanese (ja)
Other versions
JPH02174226A (en
Inventor
靖司 八木
光明 小美野
伸治 宮崎
孝彦 守屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP32994688A priority Critical patent/JPH0752722B2/en
Publication of JPH02174226A publication Critical patent/JPH02174226A/en
Priority to US07/563,345 priority patent/US5048800A/en
Publication of JPH0752722B2 publication Critical patent/JPH0752722B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、縦型熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a vertical heat treatment apparatus.

(従来の技術) 近年、半導体デバイスの製造工程における熱拡散工程や
成膜工程で使用される熱処理装置として、省スペース
化、省エネルギー化、被処理物である半導体ウエハの大
口径化および自動化への対応が容易であること等の理由
から縦型熱処理装置が開発されている。
(Prior Art) In recent years, as a heat treatment apparatus used in a thermal diffusion process or a film forming process in a semiconductor device manufacturing process, space saving, energy saving, a large diameter semiconductor wafer to be processed, and automation A vertical heat treatment apparatus has been developed because it is easy to handle.

このような縦型熱処理装置では、石英等からなる円筒状
の反応容器およびこの周囲を囲繞する如く設けられたヒ
ータ、均熱管、断熱材などから構成された反応炉本体が
ほぼ垂直に配設されており、この反応容器内に多数の半
導体ウエハを所定の間隔で棚積み収容した石英等からな
るウエハボートが配設されている。このウエハボートは
反応容器下部に挿入された円筒状の保温筒上に搭載され
ており、上下動可能とされた搬送機構によって、この保
温筒と一体となってウエハボートが反応容器内下方から
ロード・アンロードされるように構成されている。
In such a vertical heat treatment apparatus, a cylindrical reaction container made of quartz or the like and a reaction furnace main body composed of a heater, a heat equalizing tube, a heat insulating material, etc. provided so as to surround the reaction container are arranged substantially vertically. In this reaction container, a wafer boat made of quartz or the like in which a large number of semiconductor wafers are stacked and accommodated at predetermined intervals is arranged. This wafer boat is mounted on a cylindrical heat-retaining cylinder inserted in the lower part of the reaction container, and the wafer boat is loaded from below inside the reaction container integrally with this heat-retaining cylinder by a vertically movable transfer mechanism. -It is configured to be unloaded.

上記保温筒は、反応容器下部を構成するマニホールド部
に配設された反応容器気密用のシール部材例えばOリン
グや、保温筒を搭載しかつ気密を保持しながら保温筒を
回転させるための磁気シールユニット等の機材を高温か
ら保護するとともに、反応容器内の温度雰囲気を保温す
るためのもので、一般に円筒状容器内に石英ガラスウー
ル等の断熱部材を充填したものやリング状のフランジを
所定のピッチで多数積層配列させた構造のものが知られ
ている。
The heat insulation cylinder is a sealing member for sealing the reaction container, such as an O-ring, which is arranged in a manifold portion that constitutes the lower part of the reaction container, or a magnetic seal for mounting the heat insulation cylinder and rotating the heat insulation cylinder while maintaining airtightness. It protects equipment such as units from high temperatures and keeps the temperature atmosphere in the reaction vessel warm.In general, a cylindrical container filled with a heat insulating member such as quartz glass wool or a ring-shaped flange is provided. There is known a structure in which a large number of layers are arranged at a pitch.

(発明が解決しようとする課題) しかしながら、上述した従来の縦型熱処理装置における
保温筒では、以下のような問題があった。
(Problems to be Solved by the Invention) However, the heat retaining cylinder in the conventional vertical heat treatment apparatus described above has the following problems.

断熱部材を使用した構造の保温筒では、反応容器下端部
の温度が下がり過ぎて、反応ガス例えばNH3ガスとSiH2C
l2ガスとが反応してNH4Cl粒子が形成され、これが塵埃
となって歩留り低下を招く等の問題があった。
In the heat insulation cylinder with a structure using a heat insulating member, the temperature of the lower end of the reaction vessel falls too much, and the reaction gas such as NH 3 gas and SiH 2 C
There is a problem that NH 4 Cl particles are formed by reacting with the l 2 gas and become NH 4 Cl particles, resulting in a decrease in yield.

また、リング状のフランジを所定のピッチで多数積層配
列させた構造の保温筒では、反応容器下端部の温度の下
がり過ぎを防止することはできるものの、保温筒中心軸
部の孔部を透過した輻射熱が保温筒下部に配設された磁
気シールユニットに達し、この磁気シールユニットを昇
温させるという問題があった。一般に磁気シールユニッ
トの構造は、磁性体で構成されたシャフトとこのシャフ
トに間隙を保持して周設された円筒状の永久磁石からな
る回転体との間隙に磁性流体が封入された構造であり、
この磁性流体はベースオイル例えばフッ素系ベースオイ
ルに磁性体粉例えば鉄粉を分散させたもので、シャフト
と回転体間の磁束回路の作用により磁性流体が気密を保
持した状態でシャフトと回転体間で回転運動を伝達する
ように構成されている。従って、磁気シールユニットが
高温環境下にさらされると、磁性流体とベースオイルが
揮発し、反応容器の気密を保持できなくなるという問題
が生じた。
Further, in the heat retaining tube having a structure in which a large number of ring-shaped flanges are arranged in a stack at a predetermined pitch, although it is possible to prevent the temperature of the lower end portion of the reaction vessel from dropping too much, the heat retaining tube has a hole through the central axis of the heat retaining tube. There is a problem in that the radiant heat reaches the magnetic seal unit arranged in the lower part of the heat insulating cylinder and raises the temperature of the magnetic seal unit. In general, the structure of a magnetic seal unit is a structure in which a magnetic fluid is enclosed in a gap between a shaft made of a magnetic material and a rotating body made of a cylindrical permanent magnet that is circumferentially provided with a gap in the shaft. ,
This magnetic fluid is a base oil, such as a fluorine-based base oil, in which magnetic powder, such as iron powder, is dispersed, and the magnetic fluid is kept airtight by the action of the magnetic flux circuit between the shaft and the rotating body. It is configured to transmit movement. Therefore, when the magnetic seal unit is exposed to a high temperature environment, the magnetic fluid and the base oil are volatilized, and the airtightness of the reaction container cannot be maintained.

本発明は、上述した従来の問題点を解決するためになさ
れたもので、反応容器下端部の温度の下がり過ぎを防止
するとともに、保温筒下部に配設された磁気シールユニ
ットの昇温防止が可能な保温筒を備えた縦型熱処理装置
を提供することを目的とするものである。
The present invention has been made to solve the above-mentioned conventional problems, and prevents the temperature of the lower end of the reaction vessel from dropping too much, and also prevents the temperature rise of the magnetic seal unit disposed in the lower portion of the heat insulating cylinder. It is an object of the present invention to provide a vertical heat treatment apparatus provided with a heat retaining cylinder that can be used.

[発明の構成] (課題を解決するための手段) 本発明の縦型熱処理装置は、ほぼ垂直に配設された反応
容器と、この反応容器内に所定のピッチで積層配列され
た被処理物群と、前記反応容器内下部に挿着され該反応
容器内を所定の処理温度に保温するための保温筒を備え
た縦型熱処理装置において、前記保温筒を、保温筒側面
方向からの輻射熱を遮蔽するための筒体と、この筒体外
壁に軸方向に沿って所定のピッチで複数設けられ保温筒
上面方向からの輻射熱を遮蔽するための複数のフランジ
部と、前記筒体内部を閉塞し該筒体内部に進入した輻射
熱を遮蔽するための筒体閉塞部材とから構成したことを
特徴とするものである。
[Structure of the Invention] (Means for Solving the Problems) A vertical heat treatment apparatus of the present invention is a reaction vessel arranged substantially vertically, and an object to be treated which is stacked and arranged in the reaction vessel at a predetermined pitch. In a vertical heat treatment apparatus equipped with a group and a heat retaining tube inserted in the lower portion of the reaction vessel to keep the reaction vessel at a predetermined processing temperature, the heat retaining tube is provided with radiant heat from the side of the heat retaining tube. A cylindrical body for shielding, a plurality of flange portions provided on the outer wall of the cylindrical body at a predetermined pitch along the axial direction for shielding radiant heat from the upper surface of the heat retaining cylinder, and closing the inside of the cylindrical body. It is characterized by comprising a tubular body closing member for shielding radiant heat that has entered the inside of the tubular body.

(作 用) 本発明の縦型熱処理装置は、保温筒の構成を保温筒側面
方向からの輻射熱を遮蔽するための筒体と、この筒体外
壁に軸方向に沿って所定のピッチで複数設けられ保温筒
上面方向からの輻射熱を遮蔽するためのフランジ部と、
筒体内部を閉塞し該筒体内部に進入した輻射熱を遮蔽す
るための筒体閉塞部材とにより構成したので、反応容器
下端部の温度の下がり過ぎが防止でき、保温筒下部に配
設された磁気シールユニット等の装置機材の昇温防止が
可能となる。
(Operation) In the vertical heat treatment apparatus of the present invention, a heat insulating cylinder is provided with a cylindrical body for shielding radiant heat from the side surface of the heat insulating cylinder, and a plurality of heat insulating cylinders are provided on the outer wall of the cylindrical body at a predetermined pitch along the axial direction. A flange part for shielding radiant heat from the upper surface of the heat insulation cylinder,
Since it is composed of a tubular body closing member for closing the inside of the tubular body and shielding the radiant heat that has entered the inside of the tubular body, it is possible to prevent the temperature of the lower end of the reaction vessel from dropping too much, and it is arranged at the lower part of the heat insulating tube. It is possible to prevent the temperature rise of equipment such as magnetic seal units.

(実施例) 以下、本発明を窒化膜成膜用の縦型熱処理装置に適用し
た一実施例について図を参照して説明する。
(Example) An example in which the present invention is applied to a vertical heat treatment apparatus for forming a nitride film will be described below with reference to the drawings.

反応容器1は、例えば石英からなる内径240mmの外筒2
と、この外筒2内に同心的に収容された例えば石英から
なる内径200mmの内筒3とから構成された二重管構造と
なっている。そしてこの反応容器1を囲繞する如く抵抗
加熱ヒータ4、断熱材5が順次外側に被覆されている。
The reaction container 1 is, for example, an outer cylinder 2 made of quartz and having an inner diameter of 240 mm.
And an inner cylinder 3 having an inner diameter of 200 mm and made of, for example, quartz and housed concentrically in the outer cylinder 2 has a double tube structure. A resistance heater 4 and a heat insulating material 5 are sequentially coated on the outside so as to surround the reaction container 1.

上記反応容器1の下端部は、ステンレス等からなる円盤
状のフランジ6により図示を省略した気密部材例えばO
リングを介して密閉されており、このフランジ6上に側
方が内筒3と所定の間隙を保持し、被処理物を最適温度
雰囲気に設定することおよび反応容器1内の熱を断熱す
るための保温筒7が内挿されている。この保温筒7は第
2図に示すように構成されている。即ち、保温筒7に内
挿された保温筒本体は、耐熱製部材例えば石英からなる
例えば外径約90mmの円筒状の筒体8の外周に複数例えば
3枚の外径約165mmの耐熱製部材例えば石英からなるリ
ング状のフランジ9a、9b、9cを筒体8上端から所定のピ
ッシ例えば60mmピッチで溶接等により固着したもので、
筒体8の最下端は筒体8内部を閉塞する閉塞部材例えば
上記フランジと同径同部材の円盤状のフランジ10により
閉塞され、さらに該フランジ10下面には上記筒体8と同
径同部材の筒体11が所定量例えば約60mm突設されてい
る。そして、これら保温筒本体が耐熱製部材例えば石英
からなる円筒状の保温筒カバー12内に収容して保温筒7
が構成される。この保温筒7上には、多数の半導体ウエ
ハ13を間隔を設けて配列した例えば所定のピッチで積層
収容した例えば石英からなるウエハボート14が搭載され
ており、これらウエハボート14、保温筒7、フランジ6
は、図示を省略した昇降機構例えばボートエレベータに
より反応容器1内に一体となってロード・アンロードさ
れるように構成されている。
The lower end portion of the reaction vessel 1 has a disc-shaped flange 6 made of stainless steel or the like, and an airtight member, not shown, such as O.
It is hermetically sealed via a ring, and on the flange 6 sideways maintain a predetermined gap with the inner cylinder 3 so as to set the object to be treated in an optimal temperature atmosphere and to insulate the heat in the reaction vessel 1. The heat insulation cylinder 7 is inserted. The heat insulation cylinder 7 is configured as shown in FIG. That is, the heat-insulating cylinder main body inserted in the heat-insulating cylinder 7 is composed of a heat-resistant member such as quartz, and a plurality of, for example, three heat-resistant members having an outer diameter of about 165 mm on the outer periphery of a cylindrical tubular body 8 having an outer diameter of, for example, about 90 mm. For example, ring-shaped flanges 9a, 9b, 9c made of quartz are fixed from the upper end of the cylindrical body 8 by welding or the like at a predetermined pitch, for example, 60 mm pitch,
The lowermost end of the tubular body 8 is closed by a closing member that closes the inside of the tubular body 8, for example, a disk-shaped flange 10 having the same diameter and the same diameter as the above flange, and the lower surface of the flange 10 has the same diameter and the same member as the above tubular body 8. The cylindrical body 11 is projected by a predetermined amount, for example, about 60 mm. The heat insulation cylinder main body is housed in a cylindrical heat insulation cylinder cover 12 made of a heat-resistant member, for example, quartz.
Is configured. A wafer boat 14 made of, for example, quartz in which a large number of semiconductor wafers 13 are arranged at intervals and stacked and accommodated, for example, at a predetermined pitch is mounted on the heat retaining cylinder 7. The wafer boat 14, the heat retaining cylinder 7, Flange 6
Is configured so as to be integrally loaded / unloaded in the reaction vessel 1 by an elevator mechanism (not shown) such as a boat elevator.

また、フランジの6の中心部には、保温筒7を搭載しか
つ反応容器1の気密を保持しながら保温筒7を回転させ
るための磁気シールユニット15が設けられている。
A magnetic seal unit 15 is provided at the center of the flange 6 for mounting the heat insulating cylinder 7 and rotating the heat insulating cylinder 7 while keeping the reaction container 1 airtight.

反応容器1の下端部外周壁にはL字状ソースガス導入管
16が複数本例えば3本、夫々ガス吐出部を内筒3内に突
出させて設けられており、本実施例では反応ガス例えば
SiH2Cl2ガスを導入するためのSiH2Cl2ガス導入管、NH3
ガスを導入するためのNH3ガス導入管、SiH2Cl2ガスおよ
びNH3ガスを個別に導入しガス流通過程でこれらをミキ
シングして吐出するガスミキシング用導入管が夫々同一
平面上に設けられている。また処理終了後に反応容器1
内に不活性ガス例えばN2ガスを導入するためのN2ガス導
入管17がそのガス吐出部を内筒3と外筒2との間隙に挿
入させて設けられている。
An L-shaped source gas introduction pipe is provided on the outer peripheral wall of the lower end of the reaction vessel 1.
A plurality of, for example three, 16 gas discharge parts are provided so as to project into the inner cylinder 3, and in this embodiment, reaction gas such as three is provided.
SiH 2 Cl 2 gas inlet tube for introducing SiH 2 Cl 2 gas, NH 3
NH 3 gas introduction pipes for introducing gas, and gas mixing introduction pipes for individually introducing SiH 2 Cl 2 gas and NH 3 gas and mixing and discharging them in the gas distribution process are provided on the same plane. ing. Also, after the treatment is completed, the reaction container 1
An N 2 gas introduction pipe 17 for introducing an inert gas, for example, N 2 gas, is provided with its gas discharge portion inserted in the gap between the inner cylinder 3 and the outer cylinder 2.

これら各ソースガス導入管16により反応容器1内に導入
された処理ガスは排気管18より図示を省略した真空ポン
プへと排出される。
The processing gas introduced into the reaction vessel 1 through each of the source gas introduction pipes 16 is discharged through an exhaust pipe 18 to a vacuum pump (not shown).

このような構成の縦型熱処理装置の動作は、まず半導体
ウエハ群13を収容したウエハボート14を保温筒7ごと図
示を省略したボートエレベータにより内筒3内に挿入
し、この後反応容器1内を所定の真空度例えば0.17Torr
に保持しながら各ソースガス導入管16からNH3ガスおよ
びSiH2Cl2ガスを導入し、ヒータ機構4により、半導体
ウエハ群13を所定の処理温度例えば700〜850℃まで昇温
させて窒化膜の成膜処理を行う。このときの温度制御
は、反応容器1全体即ち半導体ウエハ群13全体が一定の
温度となるように制御する。
In the operation of the vertical heat treatment apparatus having such a configuration, first, the wafer boat 14 accommodating the semiconductor wafer group 13 is inserted into the inner cylinder 3 by the boat elevator (not shown) together with the heat insulation cylinder 7, and then the inside of the reaction vessel 1 is inserted. The specified vacuum degree, for example 0.17 Torr
NH 3 gas and SiH 2 Cl 2 gas are introduced from the respective source gas introduction pipes 16 while being kept at 1, and the semiconductor wafer group 13 is heated by the heater mechanism 4 to a predetermined processing temperature, for example, 700 to 850 ° C. The film forming process is performed. At this time, the temperature control is performed so that the entire reaction container 1, that is, the entire semiconductor wafer group 13 has a constant temperature.

処理中における処理ガスは、半導体ウエハ群13の上方と
下方の両方から吐出されるため、反応容器1内のガス濃
度が均一化し、各半導体ウエハ13間および個々の半導体
ウエハ13で均一性に優れた成膜が可能となる。
Since the processing gas during processing is discharged from both above and below the semiconductor wafer group 13, the gas concentration in the reaction vessel 1 becomes uniform, and the uniformity between the semiconductor wafers 13 and the individual semiconductor wafers 13 is excellent. It is possible to form a film.

ところで、本実施例の保温筒7によれば、処理中の保温
筒7最下端部即ち磁気シールユニット15上端部の温度
は、約80〜100℃または該温度以下に抑制することがで
きる。
By the way, according to the heat insulating cylinder 7 of the present embodiment, the temperature of the lowermost end of the heat insulating cylinder 7 during processing, that is, the upper end of the magnetic seal unit 15 can be suppressed to about 80 to 100 ° C. or lower.

これは、保温筒7の構成部材が断熱性に優れた石英部材
であるため、反応容器1側からの伝熱作用による熱伝達
を防止できることは勿論のことであるが、保温筒本体を
円筒体8とこの円筒体8外周に設けた複数のフランジ9
a、9b、9cによる熱の輻射を防止できることによる。
This is, of course, because the constituent member of the heat insulating cylinder 7 is a quartz member having an excellent heat insulating property, so that heat transfer due to the heat transfer action from the reaction vessel 1 side can be prevented. 8 and a plurality of flanges 9 provided on the outer circumference of the cylindrical body 8
Because it can prevent heat radiation from a, 9b, and 9c.

特に後述した輻射熱の遮蔽作用について第2図を参照し
て以下に説明する。
Particularly, the radiant heat shielding function described below will be described below with reference to FIG.

まず、反応容器1側からの輻射熱即ち略垂直方向から進
入する輻射熱aは、各フランジ9a、9b、9cにより、そし
て円筒体8内部に進入した輻射熱bは円盤状のフランジ
10により遮蔽する。
First, the radiant heat from the reaction container 1 side, that is, the radiant heat a that enters from a substantially vertical direction is due to the respective flanges 9a, 9b and 9c, and the radiant heat b that has entered the inside of the cylindrical body 8 is a disc-shaped flange.
Shield with 10.

一方、内筒3の下部内壁下面で反射された側面方向の輻
射熱bは、各フランジ9a、9b、9cと円筒体3により遮蔽
される。
On the other hand, the radiant heat b in the lateral direction reflected by the lower surface of the lower inner wall of the inner cylinder 3 is shielded by the flanges 9a, 9b, 9c and the cylindrical body 3.

さらに本実施例では、この保温筒本体を構成する石英部
材の表面をプラスト加工等により粗面に形成して輻射熱
の透過率を低下させている。
Further, in this embodiment, the surface of the quartz member constituting the heat insulating cylinder body is formed into a rough surface by plasting or the like to reduce the radiant heat transmittance.

一般に磁気シールユニット15内に封入されている磁性流
体の溶媒である例えばフッ素系オイル等は、約100℃で
揮発し始めるが、本実施例の保温筒7によれば磁気シー
ルユニット15上端部の温度を約80〜100℃または必要に
大じて該温度以下に抑制することができるので、磁性流
体のベースオイルの揮発により気密不良を防止できる。
また、フランじ9a、9b、9cの数を変えることにより、保
温筒7周辺の温度を任意に調整することができる。
Generally, the solvent of the magnetic fluid enclosed in the magnetic seal unit 15, for example, fluorinated oil or the like, starts to volatilize at about 100 ° C. However, according to the heat insulating cylinder 7 of the present embodiment, the upper end portion of the magnetic seal unit 15 is Since the temperature can be suppressed to about 80 to 100 ° C. or, if necessary, lower than the temperature, it is possible to prevent airtightness failure due to volatilization of the base oil of the magnetic fluid.
In addition, the temperature around the heat insulating cylinder 7 can be arbitrarily adjusted by changing the number of the flanges 9a, 9b, 9c.

尚、80〜100℃の温度領域では、NH3ガスとSiH2Cl2ガス
とが反応して塵埃の原因となるNH4Clが生成される恐れ
があるが、ソースガス導入管16のガス吐出孔を該反応温
度領域以上例えば300〜400℃の温度領域に設けておけ
ば、このような問題は発生しない。
In the temperature range of 80 to 100 ° C., NH 3 gas and SiH 2 Cl 2 gas may react with each other to generate NH 4 Cl, which causes dust. If the holes are provided above the reaction temperature range, for example, in the temperature range of 300 to 400 ° C., such a problem does not occur.

こうして、成膜処理を完了後、N2ガス導入管17よりN2
スの反応容器1内にパージしながら、図示を省略したボ
ートエレベータを下降させ、ウエハボート14を反応容器
1外に取出し、成膜作業が終了する。
Thus, after the film formation process is completed, the boat elevator (not shown) is lowered while purging the N 2 gas introduction pipe 17 into the N 2 gas reaction container 1, and the wafer boat 14 is taken out of the reaction container 1. The film forming work is completed.

[発明の効果] 以上説明したように、本発明の縦型熱処理装置によれ
ば、応容器下端部の温度の下がり過ぎを防止するととも
に、保温筒下部に配設された磁気シールユニット等の装
置機材の昇温防止が可能となる。
[Effects of the Invention] As described above, according to the vertical heat treatment apparatus of the present invention, the temperature of the lower end of the reaction container is prevented from dropping too much, and an apparatus such as a magnetic seal unit disposed below the heat retaining cylinder is provided. It is possible to prevent the temperature rise of equipment.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明装置の実施例を説明するための縦型熱処
理装置下部を示す拡大縦断面、第2図は第1図の保温筒
本体を示す断面および一部平面図である。 1……反応容器、2……外筒、3……内筒、4……ヒー
タ機構、7……保温筒、8……内筒、9……フランジ、
10……円盤上フランジ、12……保温筒カバー、13…半導
体のウエハ群、14……ウエハボート、15……磁気シール
ユニット、16……ソースガス導入管、17……N2ガス用導
入管。
FIG. 1 is an enlarged vertical cross section showing a lower portion of a vertical heat treatment apparatus for explaining an embodiment of the apparatus of the present invention, and FIG. 2 is a cross section and a partial plan view showing the heat retaining cylinder body of FIG. 1 ... Reaction container, 2 ... Outer cylinder, 3 ... Inner cylinder, 4 ... Heater mechanism, 7 ... Heat retaining cylinder, 8 ... Inner cylinder, 9 ... Flange,
10 ... Disk flange, 12 ... Heat insulation cylinder cover, 13 ... Semiconductor wafer group, 14 ... Wafer boat, 15 ... Magnetic seal unit, 16 ... Source gas introduction pipe, 17 ... N 2 gas introduction tube.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮崎 伸治 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝総合研究所内 (72)発明者 守屋 孝彦 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Shinji Miyazaki, No. 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Research Institute Co., Ltd. (72) Inventor Takahiko Moriya Komukai-Toshiba, Kawasaki-shi, Kanagawa No. 1 Incorporated company Toshiba Research Institute

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ほぼ垂直に配設された反応容器と、この反
応容器内の所定のピッチで積層配列された被処理物群
と、前記反応容器内下部に挿着され該反応容器内を所定
の処理温度に保温するための保温筒を備えた縦型熱処理
装置において、 前記保温筒を、保温筒側面方向からの輻射熱を遮蔽する
ための筒体と、この筒体外壁に軸方向に沿って所定のピ
ッチで複数設けられ保温筒上面方向からの輻射熱を遮蔽
するための複数のフランジ部と、前記筒体内部を閉塞し
該筒体内部に進入した輻射熱を遮蔽するための筒体閉塞
部材とから構成したことを特徴とする縦型熱処理装置。
1. A reaction container arranged substantially vertically, a group of objects to be processed which are stacked and arranged at a predetermined pitch in the reaction container, and a predetermined inside of the reaction container inserted into the lower part of the reaction container. In a vertical heat treatment apparatus having a heat retaining cylinder for retaining heat at the processing temperature, the heat retaining cylinder is a cylinder for shielding radiant heat from a side surface of the heat retaining cylinder, and an outer wall of the cylinder along the axial direction. A plurality of flange portions provided at a predetermined pitch for shielding radiant heat from the upper surface of the heat insulating cylinder; A vertical heat treatment apparatus comprising:
JP32994688A 1988-12-27 1988-12-27 Vertical heat treatment equipment Expired - Lifetime JPH0752722B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP32994688A JPH0752722B2 (en) 1988-12-27 1988-12-27 Vertical heat treatment equipment
US07/563,345 US5048800A (en) 1988-12-27 1990-08-07 Vertical heat treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32994688A JPH0752722B2 (en) 1988-12-27 1988-12-27 Vertical heat treatment equipment

Publications (2)

Publication Number Publication Date
JPH02174226A JPH02174226A (en) 1990-07-05
JPH0752722B2 true JPH0752722B2 (en) 1995-06-05

Family

ID=18227032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32994688A Expired - Lifetime JPH0752722B2 (en) 1988-12-27 1988-12-27 Vertical heat treatment equipment

Country Status (1)

Country Link
JP (1) JPH0752722B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5765545A (en) * 1996-03-22 1998-06-16 Kabushiki Kaisha Toyoda Jidoshokk Seisakusho Viscous fluid type heat generator with heat-generation performance changing unit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106222753B (en) * 2016-08-22 2018-07-06 中国科学技术大学 A kind of miniature rapid temperature rise and drop annealing furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5765545A (en) * 1996-03-22 1998-06-16 Kabushiki Kaisha Toyoda Jidoshokk Seisakusho Viscous fluid type heat generator with heat-generation performance changing unit
DE19712150C2 (en) * 1996-03-22 1999-04-15 Toyoda Automatic Loom Works Viscous fluid type heat generator with heat output changing unit

Also Published As

Publication number Publication date
JPH02174226A (en) 1990-07-05

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