JPH0750568B2 - Transparent conductive film and material for producing the transparent conductive film - Google Patents
Transparent conductive film and material for producing the transparent conductive filmInfo
- Publication number
- JPH0750568B2 JPH0750568B2 JP62008913A JP891387A JPH0750568B2 JP H0750568 B2 JPH0750568 B2 JP H0750568B2 JP 62008913 A JP62008913 A JP 62008913A JP 891387 A JP891387 A JP 891387A JP H0750568 B2 JPH0750568 B2 JP H0750568B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- tellurium
- oxide
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は透明導電膜およびその製造用材料に関し、詳し
くは、インジウム、スズ、テルルおよび酸素からなり、
透明性を維持しつつ電気比抵抗を低下させた透明導電膜
およびその製造用材料に関する。Description: TECHNICAL FIELD The present invention relates to a transparent conductive film and a material for producing the same, and more specifically, it is composed of indium, tin, tellurium and oxygen.
The present invention relates to a transparent conductive film having reduced electrical resistivity while maintaining transparency, and a material for producing the same.
［従来技術およびその問題点］ 従来より透明導電膜は、太陽電池、液晶ディスプレイ等
の表示素子、赤外線反射膜、透明スイッチ、電磁シール
ド材等に利用されている。[Prior Art and Its Problems] Conventionally, transparent conductive films have been used for display elements such as solar cells and liquid crystal displays, infrared reflective films, transparent switches, electromagnetic shield materials, and the like.
その中でも酸化インジウムおよび酸化スズからなるIn2O
3・SnO2（ITO）膜は酸化物系透明導電膜として幅広く使
用されている。Of these, In 2 O composed of indium oxide and tin oxide
3 · SnO 2 (ITO) film is widely used as an oxide-based transparent conductive film.
しかしながら、近年、電極の微細化および素子の大型化
によって、より抵抗が低く、しかも高透過率の透明導電
膜が求められている。すなわち、従来、一般的に使用さ
れている酸化スズを、９モル％含有するITO膜の比抵抗
は2.0〜2.3×10-4Ωcm程度、酸化スズを18モル％含有す
るITO膜の比抵抗は、1.7〜2.0×10-4Ωcm程度であり、
前者のほうが高い透明性を示すが、平均すると透過率90
％であり、両者のITO膜を所望によって選択して用いて
いる。However, in recent years, due to miniaturization of electrodes and upsizing of elements, there has been a demand for a transparent conductive film having lower resistance and high transmittance. That is, the resistivity of an ITO film containing 9 mol% of tin oxide, which has been generally used conventionally, is about 2.0 to 2.3 × 10 −4 Ωcm, and the resistivity of an ITO film containing tin oxide of 18 mol% is , 1.7 to 2.0 × 10 -4 Ωcm,
The former shows higher transparency, but the average transmittance is 90.
%, And both ITO films are selected and used as desired.
しかるに、より微細で大面積の配線を行なうためには、
透過率を損わずに低抵抗化を実現しなければならない。However, in order to perform finer and larger area wiring,
Low resistance must be realized without impairing the transmittance.
［発明の目的］ 本発明の目的は、透明性を損うことなく、電気比抵抗を
低下させた透明導電膜およびその製造用材料を提供する
ことにある。[Object of the Invention] An object of the present invention is to provide a transparent conductive film having reduced electrical resistivity without impairing transparency and a material for producing the same.
［問題点を解決するための手段および作用］ 本発明の上記目的は、透明導電膜にテルルを含有させる
ことによって達成される。[Means and Action for Solving Problems] The above object of the present invention is achieved by incorporating tellurium into the transparent conductive film.
すなわち本発明の透明導電膜は、インジウム、スズ、テ
ルルおよび酸素からなることを特徴とするものである。That is, the transparent conductive film of the present invention is characterized by comprising indium, tin, tellurium and oxygen.
本発明の透明導電膜を製造するための製造用材料として
は、特に限定されないが、例えば酸化インジウム（In2O
3）、酸化スズ（SnO2）、酸化テルル（TeO2）からなる
焼結体またはこれらの混合物が好ましく用いられる。ま
た、インジウム、スズ、テルルのうちの１〜２種は酸化
物を用い、他を金属単体として用いてもよく、すべてを
金属単体としてもよいが、この場合には導電膜の製造時
に、酸素ガス雰囲気下で行なうか、または酸素ガスを吹
き込むことが必要となる。さらにはインジウムまたはそ
の酸化物とスズまたはその酸化物を用い、これに有機テ
ルルガスを吹き込んでもよく、この場合にも必要に応じ
て酸素ガス雰囲気下で行なうか、または酸素ガスを吹き
込んでもよい。この中で酸化インジウム、酸化スズおよ
び酸化テルルからなる焼結体が透明導電膜を安価に安定
して供給できるという観点から好ましい。また、これら
透明導電膜製造用材料のテルルの配合割合は、酸化物換
算で0.001〜５モル％の範囲で用いることが望ましい。The manufacturing material for manufacturing the transparent conductive film of the present invention is not particularly limited, and for example, indium oxide (In 2 O
3 ), tin oxide (SnO 2 ), tellurium oxide (TeO 2 ), or a mixture thereof is preferably used. Further, one or two kinds of indium, tin, and tellurium are oxides, and the others may be used as a simple metal, or all may be a simple metal, but in this case, oxygen is generated during the production of the conductive film. It is necessary to carry out under a gas atmosphere or blow in oxygen gas. Further, indium or its oxide and tin or its oxide may be used, and organic tellurium gas may be blown into them, and in this case as well, it may be carried out in an oxygen gas atmosphere or oxygen gas may be blown therein. Among these, a sintered body made of indium oxide, tin oxide and tellurium oxide is preferable from the viewpoint that the transparent conductive film can be stably supplied at a low cost. Further, the compounding ratio of tellurium in these transparent conductive film-producing materials is preferably in the range of 0.001 to 5 mol% in terms of oxide.
本発明においては、これら透明導電膜製造用材料をター
ゲットとして用い透明導電膜を製造するが、これら透明
導電膜を製造する方法としては、例えば、スパッタリン
グ法、真空蒸着法、イオンプレーティング法、CVD法等
が用いられ、これら製造方法の相違に準じて製造用材料
が上記した中から任意に選択される。In the present invention, a transparent conductive film is manufactured using these transparent conductive film manufacturing materials as a target. As a method for manufacturing these transparent conductive films, for example, a sputtering method, a vacuum deposition method, an ion plating method, a CVD method is used. A method or the like is used, and the manufacturing material is arbitrarily selected from the above according to the difference in these manufacturing methods.
このようにして得られた透明導電膜は、透明性を低下さ
せることなく、比抵抗を低下させることができる。この
透明導電膜には、テルルを酸化物換算で0.0001〜1.20モ
ル％含有することが特性の点から望ましい。The transparent conductive film thus obtained can reduce the specific resistance without reducing the transparency. From the viewpoint of characteristics, it is desirable that the transparent conductive film contains tellurium in an amount of 0.0001 to 1.20 mol% in terms of oxide.
［実施例および比較例］ 以下、実施例および比較例に基づき本発明を詳細に説明
する。[Examples and Comparative Examples] Hereinafter, the present invention will be described in detail based on Examples and Comparative Examples.
実施例１〜10および比較例１〜２ 第１表に示される組成の透明導電膜製造用材料（ターゲ
ット）を用いて、透明導電膜を製造した。なお、これら
透明導電膜製造用材料は、酸化インジウム、酸化スズ、
酸化テルルからなる焼結体を用いた。Examples 1 to 10 and Comparative Examples 1 to 2 Transparent conductive films were manufactured using the materials (targets) for manufacturing transparent conductive films having the compositions shown in Table 1. In addition, these transparent conductive film manufacturing materials are indium oxide, tin oxide,
A sintered body made of tellurium oxide was used.
透明導電膜の製造はスパッタリングにより行ない、第１
図に示されるスパッタリング装置を用いた。第１図中、
１はチャンバーであり、このチャンバー１内には電極
（カソード）２および電極（アノード）３が配置されて
いる。電極２には、透明導電膜製造用材料（ターゲッ
ト）４が配設され、高周波電源または直流電源のマイナ
スに接続される。また、電極３には基板５が配設されチ
ャンバー１とともにグランドに接続されている。また、
６はガス導入管、７は排気管をそれぞれ示す。The transparent conductive film is manufactured by sputtering.
The sputtering device shown in the figure was used. In Figure 1,
Reference numeral 1 denotes a chamber, and an electrode (cathode) 2 and an electrode (anode) 3 are arranged in the chamber 1. A material (target) 4 for producing a transparent conductive film is disposed on the electrode 2 and is connected to the minus side of the high frequency power source or the direct current power source. A substrate 5 is arranged on the electrode 3 and is connected to the ground together with the chamber 1. Also,
Reference numeral 6 is a gas introduction pipe, and 7 is an exhaust pipe.
このスパッタリング装置を用いて、アルゴンと酸素の混
合ガスをチャンバー内に導入し、スパッタリングを行な
いガラス基板上に膜厚1500〜2500Åの透明導電膜を形成
した。この際のスパッタリングの条件（到達真空度、酸
素分圧、スパッタ圧、基板温度、基板材質、投入電力）
を第２表に示す。Using this sputtering apparatus, a mixed gas of argon and oxygen was introduced into the chamber, and sputtering was performed to form a transparent conductive film having a film thickness of 1500 to 2500Å on a glass substrate. Sputtering conditions at this time (attainment vacuum degree, oxygen partial pressure, sputtering pressure, substrate temperature, substrate material, input power)
Is shown in Table 2.
このようにして得られた透明導電膜の電気比抵抗を第１
表に示すと共に、電気比抵抗と透明導電膜中のテルルの
含有量（酸化物換算）の関係を第２図に示す。第２図に
おいて、縦軸は電気比抵抗（10gρ）、横軸は透明導電
膜中の酸化テルルの含量（モル％）をそれぞれ示す。ま
た、電気比抵抗の値は、第２表に示す基板温度等の諸条
件を変えて得られたそれぞれの値の平均値を示す。The electric resistance of the transparent conductive film thus obtained is
In addition to being shown in the table, FIG. 2 shows the relationship between the electrical resistivity and the tellurium content (as oxide) in the transparent conductive film. In FIG. 2, the vertical axis represents the electrical resistivity (10 gρ), and the horizontal axis represents the tellurium oxide content (mol%) in the transparent conductive film. Further, the value of electrical resistivity is the average value of the respective values obtained by changing various conditions such as the substrate temperature shown in Table 2.
また、比較例１および実施例２に関しては、透明性の評
価を、各波長の透過率で行ない、その結果を第３図に示
した。第３図において、縦軸は透過率、横軸は波長をそ
れぞれ示す。Regarding Comparative Example 1 and Example 2, the transparency was evaluated by the transmittance of each wavelength, and the results are shown in FIG. In FIG. 3, the vertical axis represents the transmittance and the horizontal axis represents the wavelength.
第１表に示されるように、酸化テルルを配合した実施例
１〜５は比較例１に比して電気比抵抗が低下している。
また、酸化テルルを配合した実施例６〜10においても比
較例２に比して電気比抵抗が低下している。 As shown in Table 1, in Examples 1 to 5 containing tellurium oxide, the electrical resistivity was lower than in Comparative Example 1.
Also, in Examples 6 to 10 containing tellurium oxide, the electrical resistivity was lower than that in Comparative Example 2.
第２図は比較例２および実施例６〜10により得られた透
明導電膜中のテルル含量（酸化物換算）であるが、製造
用材料に比較してテルル含量が減少していることが判
る。また、テルル含量が0.5モル％近傍で最も低い電気
比抵抗を示す。FIG. 2 shows the tellurium content (as oxide) in the transparent conductive films obtained in Comparative Example 2 and Examples 6 to 10, and it can be seen that the tellurium content is reduced as compared with the manufacturing material. . It also shows the lowest electrical resistivity when the tellurium content is around 0.5 mol%.
また、第３図は実施例２と比較例１の透過率の比較であ
るが、両者の透過率はほぼ同等であるが、低波長領域で
は実施例２のほうが高い透過率を示す。Further, FIG. 3 is a comparison of the transmittances of Example 2 and Comparative Example 1. The transmittances of the two are almost equal, but Example 2 shows higher transmittance in the low wavelength region.
実施例11〜14および比較例３〜６ 酸化スズを９モル％含有するものについて、スパッタリ
ングの諸条件を変えて電気比抵抗を評価し、この際の酸
素流量、テルル添加量および基板温度と共に第３表に示
した。Examples 11 to 14 and Comparative Examples 3 to 6 For those containing 9 mol% of tin oxide, the electrical resistivity was evaluated by changing the conditions of sputtering, and the oxygen flow rate, the amount of tellurium added, and the substrate temperature at this time were evaluated. It is shown in Table 3.
第３表に示されるように、スパッタリングの条件に拘わ
らず、テルルを含有する実施例11〜14は、テルルを含有
しない比較例３〜６に比べて電気比抵抗が低下する。ま
た、基板温度が高いほど電気比抵抗は低下する傾向にあ
る。 As shown in Table 3, regardless of the sputtering conditions, Examples 11 to 14 containing tellurium have a lower electrical resistivity than Comparative Examples 3 to 6 not containing tellurium. Also, the higher the substrate temperature, the lower the electrical resistivity tends to be.
［発明の効果］ 以上説明したように、インジウム、スズ、テルルおよび
酸素からなる本発明の透明導電膜は、透明性を維持しつ
つ、電気比抵抗を低下することができる。また、透明導
電膜の製造用材料として、インジウム酸化物、スズ酸化
物およびテルル酸化物の焼結体を用いることによって、
透明導電膜が安価に安定して供給される。[Effects of the Invention] As described above, the transparent conductive film of the present invention made of indium, tin, tellurium, and oxygen can reduce the electrical resistivity while maintaining transparency. Further, by using a sintered body of indium oxide, tin oxide and tellurium oxide as a material for producing the transparent conductive film,
The transparent conductive film is inexpensively and stably supplied.
第１図は、スパッタリング装置の概略図、 第２図は、透明導電膜中のテルル含量と電気比抵抗との
関係を示すグラフ、 第３図は、比較例１および実施例３によって得られる透
明導電膜の透過率と波長の関係を示すグラフである。FIG. 1 is a schematic view of a sputtering apparatus, FIG. 2 is a graph showing the relationship between tellurium content in a transparent conductive film and electrical resistivity, and FIG. 3 is a transparent film obtained by Comparative Example 1 and Example 3. It is a graph which shows the transmittance | permeability of a conductive film, and the relationship of wavelength.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 31/04 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 31/04
Claims (2)
なることを特徴とする透明導電膜。1. A transparent conductive film comprising indium, tin, tellurium and oxygen.
ル酸化物の焼結体からなる透明導電膜製造用材料。2. A material for producing a transparent conductive film comprising a sintered body of indium oxide, tin oxide and tellurium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008913A JPH0750568B2 (en) | 1987-01-20 | 1987-01-20 | Transparent conductive film and material for producing the transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008913A JPH0750568B2 (en) | 1987-01-20 | 1987-01-20 | Transparent conductive film and material for producing the transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63178414A JPS63178414A (en) | 1988-07-22 |
| JPH0750568B2 true JPH0750568B2 (en) | 1995-05-31 |
Family
ID=11705898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62008913A Expired - Lifetime JPH0750568B2 (en) | 1987-01-20 | 1987-01-20 | Transparent conductive film and material for producing the transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750568B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6042752A (en) * | 1997-02-21 | 2000-03-28 | Asahi Glass Company Ltd. | Transparent conductive film, sputtering target and transparent conductive film-bonded substrate |
| JP3925977B2 (en) * | 1997-02-21 | 2007-06-06 | 旭硝子セラミックス株式会社 | Transparent conductive film, method for producing the same, and sputtering target |
| JP2011257617A (en) * | 2010-06-10 | 2011-12-22 | Canon Inc | Diffraction optical element and optical system having the same |
| GB2482544A (en) * | 2010-08-06 | 2012-02-08 | Advanced Tech Materials | Making high density indium tin oxide sputtering targets |
-
1987
- 1987-01-20 JP JP62008913A patent/JPH0750568B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63178414A (en) | 1988-07-22 |
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