JPH074938A - Surface-state inspection apparatus - Google Patents

Surface-state inspection apparatus

Info

Publication number
JPH074938A
JPH074938A JP5145795A JP14579593A JPH074938A JP H074938 A JPH074938 A JP H074938A JP 5145795 A JP5145795 A JP 5145795A JP 14579593 A JP14579593 A JP 14579593A JP H074938 A JPH074938 A JP H074938A
Authority
JP
Japan
Prior art keywords
sample
laser beam
mirror
line mirror
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5145795A
Other languages
Japanese (ja)
Inventor
Moritoshi Ando
護俊 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5145795A priority Critical patent/JPH074938A/en
Publication of JPH074938A publication Critical patent/JPH074938A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an inspection apparatus for surface state whose inspection accuracy is sufficient and which can reduce the number of inspection processes sharply by a method wherein a line mirror is arranged between an objective lens and a sample and in a position exposed to a laser beam. CONSTITUTION:A line mirror 33 and a second beam splitter 27 are arranged between an objective lens 25 and a sample 29, an incident laser beam P2 is divided into two directions by the beam splitter 27, the sample 29 is irradiated with the laser beam P2 on one side, and the mirror 33 is irradiated with the laser beam P2 on the other side. Consequently, a beam of interference light P3 of a beam of reflected light P3 from the surface of the sample 29 with a beam of reflected light P3 from the mirror 33 can be detected by a photodetector 32, and the surface state (the unevenness) of the sample 29 can be observed with good accuracy on the basis of the optical intensity of the beam of interference light. In addition, since the lengthwise direction of the mirror 33 coincides with the main scanning direction of the incident laser beam P2, the surface state can be observed continuously along a scanning track, and the number of inspection processes can be reduced sharply.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、表面状態検査装置に関
し、特に、多層構造を有するLSI(largescale integ
rated circuit)チップの各層の平坦性を検査するのに
用いて好適な表面状態検査装置に関する。一般に、多層
構造を有するLSIチップでは、積層数が多くなるほど
表面の平坦性が悪くなり、特に、光学的投影法によって
パターン形成を行う際に不都合をきたすことがある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface condition inspection device, and more particularly to an LSI (large scale integ
rated circuit) A surface condition inspection device suitable for inspecting the flatness of each layer of a chip. Generally, in an LSI chip having a multi-layer structure, the flatness of the surface deteriorates as the number of stacked layers increases, and this may cause inconvenience especially when pattern formation is performed by an optical projection method.

【0002】光学的投影法では、マスクパターンをチッ
プ表面のレジストに投影するが、パターン線幅の微小化
に伴って光学系の焦点深度(ピントの合う深さ)が浅く
なる傾向にあり、このため、チップ表面の凹凸が焦点深
度を外れる程度に大きいと、チップ表面に投影されたパ
ターン像がぼけてしまい、正確なパターン形成が困難に
なる。
In the optical projection method, a mask pattern is projected on a resist on the surface of a chip. However, the depth of focus of an optical system tends to become shallower as the pattern line width becomes smaller. Therefore, if the unevenness of the chip surface is large enough to deviate from the depth of focus, the pattern image projected on the chip surface will be blurred and accurate pattern formation will be difficult.

【0003】[0003]

【従来の技術】チップ表面の平坦性を検査できる技術と
して、本出願人は先に「表面欠陥検査装置」(特開昭5
9−92306号公報)を提案している。この装置は、
試料表面からの反射レーザ光(以下「反射光」)をハー
フミラーにより2つのビームに分割し、第1のビームを
第1の光検知器で受光すると共に、第2のビームをピン
ホールを通して第2の光検知器で受光し、そして、第1
の光検知器の出力をコンパレータの基準入力に、また、
第2の光検知器の出力を同コンパレータの比較入力に与
えるように構成したものである。
2. Description of the Related Art As a technique for inspecting the flatness of the surface of a chip, the applicant of the present invention has previously referred to a "surface defect inspection device" (Japanese Patent Laid-Open No. Sho 5).
9-92306). This device
A laser beam reflected from the sample surface (hereinafter referred to as “reflected light”) is split into two beams by a half mirror, the first beam is received by a first photodetector, and the second beam is passed through a pinhole. The second photodetector receives light, and the first
The output of the photo detector of is to the reference input of the comparator,
The output of the second photodetector is applied to the comparison input of the same comparator.

【0004】これによれば、試料表面の比較的に広い範
囲からの反射光量に相当する信号で試料表面の平均レベ
ルを表すことができ、コンパレータの比較動作、すなわ
ち試料表面の比較的に狭い範囲のレベルが上記平均レベ
ルからどのぐらいずれているかを定量的に測定できる。
According to this, the average level of the sample surface can be represented by a signal corresponding to the amount of reflected light from a relatively wide range of the sample surface, and the comparator operation, that is, the relatively narrow range of the sample surface. It is possible to quantitatively measure the deviation of the level of from the above average level.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、かかる
従来の表面状態検査装置にあっては、試料表面のピンポ
イント的なレベル検査には有用であるが、面的な平坦性
を検査するには、ポイント毎に検査を繰り返さなければ
ならない。従って、検査工数の削減という点で未だ改善
すべき余地があった。 [目的]そこで、本発明は、充分な検査精度で、且つ検
査工数を大幅に削減できる優れた表面状態検査装置の提
供を目的とする。
However, such a conventional surface state inspection device is useful for pinpoint level inspection of the sample surface, but for inspection of surface flatness, The test must be repeated for each point. Therefore, there is still room for improvement in terms of reduction of inspection man-hours. [Purpose] Therefore, an object of the present invention is to provide an excellent surface condition inspection apparatus which has a sufficient inspection accuracy and can significantly reduce the inspection man-hours.

【0006】[0006]

【課題を解決するための手段】本発明は、上記目的を達
成するために、その概念構成を図1(a)に示すよう
に、対物レンズ1や第1のビームスプリッタ2を含む光
学系3を介してレーザ光4を試料5の表面に照射し、該
試料5の表面からの反射光6を結像レンズ7を介して光
検知器8に導き、該光検知器8の出力信号に基づいて前
記試料5の表面状態を検査する装置において、前記対物
レンズ1によって絞り込まれた前記レーザ光4のビーム
直径よりも短手方向(図面の左右方向)の幅が狭く、且
つ、長手方向(図面の表裏を貫通する方向)が前記レー
ザ光4の走査方向に一致するラインミラー9を備え、該
ラインミラー9を前記対物レンズ1と前記試料5の間
で、且つ、前記レーザ光4に晒される場所に配置し、さ
らに、該ラインミラー9と前記試料5の間に第2のビー
ムスプリッタ10を配置したことを特徴とするものであ
る。
In order to achieve the above object, the present invention has an optical system 3 including an objective lens 1 and a first beam splitter 2 as shown in FIG. The surface of the sample 5 is irradiated with the laser beam 4 via the, and the reflected light 6 from the surface of the sample 5 is guided to the photodetector 8 through the imaging lens 7, and based on the output signal of the photodetector 8. In the device for inspecting the surface state of the sample 5 by using the objective lens 1, the width of the laser beam 4 narrowed by the objective lens 1 is narrower in the lateral direction (horizontal direction in the drawing) and longer in the longitudinal direction (in the drawing). A line mirror 9 whose direction (passing through the front and back sides) of the laser beam 4 coincides with the scanning direction of the laser beam 4, and the line mirror 9 is exposed to the laser beam 4 between the objective lens 1 and the sample 5. Place it in place, and then the line mirror It is characterized in that the second beam splitter 10 is disposed between the sample 5 and.

【0007】[0007]

【作用】図1(b)は、ラインミラー9、第2のビーム
スプリッタ10及び試料5近傍におけるレーザ光の挙動
概念図である。入射したレーザ光4は、まず、第2のビ
ームスプリッタ10を透過して試料5に至る第1のレー
ザ光4aと、第2のビームスプリッタ10で反射してラ
インミラー9に至る第2のレーザ光4bに分けられる。
そして、これら2つのレーザ光4a、4bは、試料5と
ラインミラー9によってそれぞれ反射された後、再び、
第1の反射レーザ光(以下「第1の反射光」)4a′及
び第2の反射レーザ光(以下「第2の反射光」)4b′
となって入射経路を逆行し、2つの反射光4a′、4
b′の経路長差に応じた光強度をもつ干渉光が光検知器
8で観測される。
FIG. 1B is a conceptual diagram of the behavior of the laser light in the vicinity of the line mirror 9, the second beam splitter 10 and the sample 5. The incident laser beam 4 first passes through the second beam splitter 10 and reaches the sample 5, and the second laser beam 4 a reflects the second laser beam 10 and reaches the line mirror 9. It is divided into light 4b.
Then, after these two laser beams 4a and 4b are respectively reflected by the sample 5 and the line mirror 9, again,
The first reflected laser light (hereinafter "first reflected light") 4a 'and the second reflected laser light (hereinafter "second reflected light") 4b'
Becomes the reverse path of the incident light, and the two reflected lights 4a ′, 4
Interfering light having a light intensity corresponding to the path length difference b'is observed by the photodetector 8.

【0008】すなわち、第2のビームスプリッタ10か
ら試料までの距離Laと、第2のビームスプリッタ10
からラインミラー9までの距離Lbとの差ΔLに応じた
信号が光検知器8から出力されるので、この信号に基づ
いて試料5の表面状態(凹凸の程度)を検査することが
できる。また、ラインミラー9の長手方向(図面の表裏
を貫通する方向)とレーザ光4の走査方向が一致してい
るので、試料5の表面状態を走査線に沿って連続的に検
査でき、スポット的な検査に比べて検査工数を大幅に削
減することができる。
That is, the distance La from the second beam splitter 10 to the sample and the second beam splitter 10
Since the signal corresponding to the difference ΔL from the distance Lb from the line mirror 9 to the line mirror 9 is output from the photodetector 8, the surface state (degree of unevenness) of the sample 5 can be inspected based on this signal. Further, since the longitudinal direction of the line mirror 9 (direction penetrating the front and back of the drawing) and the scanning direction of the laser beam 4 are coincident with each other, the surface condition of the sample 5 can be continuously inspected along the scanning line, and the spot condition can be obtained. It is possible to significantly reduce the inspection man-hours compared to other inspections.

【0009】[0009]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図2〜図10は本発明に係る表面状態検査装置の
一実施例を示す図である。まず、構成を説明する。図2
は本実施例の光学系の構成図であり、20はレーザ光P
1 を発生する光源、22はレーザ光P1 のビーム径を拡
大(P2 は拡大後のレーザ光)するビームエクスパン
ダ、23はレーザ光P2 の光軸を曲げるビームスプリッ
タ(以下「第1のビームスプリッタ」)、24は所定方
向に定速度Vで回転しながらレーザ光P2 を主走査する
回転多面鏡、25はレーザ光P2 を絞り込む対物レンズ
(スキャンレンズとも言う)、26はガラス等の透明
体、27は第2のビームスプリッタ、28はLSIチッ
プ等の試料29の表面に描かれたレーザ光P2 の走査軌
跡、30は試料29からの反射レーザ光(以下「反射
光」)P3 の光軸上に配置された結像レンズ、31は結
像レンズ30を通過した反射光P3 のビーム径よりも微
小径のピンホール31aを有するピンホール板、32は
ピンホール31aを通過した反射光P3 の光強度に応じ
た電気信号を出力する光検知器である。
Embodiments of the present invention will be described below with reference to the drawings. 2 to 10 are views showing an embodiment of the surface condition inspection apparatus according to the present invention. First, the configuration will be described. Figure 2
Is a block diagram of the optical system of the present embodiment, and 20 is a laser beam P
1 , a beam expander 22 that expands the beam diameter of the laser light P 1 (P 2 is the expanded laser light), and a beam splitter 23 that bends the optical axis of the laser light P 2 (hereinafter referred to as “first Beam splitter "), 24 is a rotary polygonal mirror that mainly scans the laser light P 2 while rotating at a constant speed V in a predetermined direction, 25 is an objective lens (also called a scan lens) that narrows down the laser light P 2 , and 26 is glass. Etc., 27 is a second beam splitter, 28 is a scanning locus of the laser beam P 2 drawn on the surface of a sample 29 such as an LSI chip, 30 is a reflected laser beam from the sample 29 (hereinafter referred to as “reflected light”). ) An image forming lens disposed on the optical axis of P 3 , 31 is a pinhole plate having a pinhole 31a having a diameter smaller than the beam diameter of the reflected light P 3 which has passed through the image forming lens 30, and 32 is the pinhole 31a. Passed through A photodetector for outputting an electrical signal corresponding to the light intensity of the light P 3.

【0010】ここで、透明体26には、微細な幅のライ
ンミラー33が取り付けられ(又は蒸着形成され)てい
る。このラインミラー33の反射面は、第2のビームス
プリッタ27側に指向し、且つ、ラインミラー33の長
手方向は、レーザ光P2 の主走査方向(走査軌跡28の
方向)に一致し、さらに、ラインミラー33の短手方向
の幅は、対物レンズ25によって絞り込まれたレーザ光
2 のビーム径よりも狭くなっている。
Here, a line mirror 33 having a fine width is attached (or formed by vapor deposition) to the transparent body 26. The reflecting surface of the line mirror 33 is directed toward the second beam splitter 27 side, and the longitudinal direction of the line mirror 33 coincides with the main scanning direction of the laser beam P 2 (direction of the scanning locus 28). The width of the line mirror 33 in the lateral direction is smaller than the beam diameter of the laser light P 2 narrowed down by the objective lens 25.

【0011】図3は、本実施例の全体ブロック図であ
り、図2の光学系から出力された信号(光検知器32か
らの信号)は、アンプ40で増幅された後、A/D変換
器(図示略)でディジタル信号に変換され、フレームメ
モリ41の指定アドレスに書き込まれる。なお、フレー
ムメモリ41のアドレス指定は、コントローラ42によ
って行われ、コントローラ42は試料(図2の符号29
参照)を載置するテーブル43の移動を制御して副走査
を行うと共に、この副走査に同期して上記アドレス指定
を行う。フレームメモリ41の内容は、逐次に読み出さ
れて欠陥判別論理部44に送られ、所定の判別基準値と
比較されて試料表面の凹凸状態が判定され、その判定結
果が出力部45によって表示又はハードコピーされる。
FIG. 3 is an overall block diagram of this embodiment. The signal output from the optical system of FIG. 2 (the signal from the photodetector 32) is amplified by an amplifier 40 and then A / D converted. It is converted into a digital signal by a device (not shown) and written in a designated address of the frame memory 41. Note that the addressing of the frame memory 41 is performed by the controller 42, and the controller 42 uses the sample (reference numeral 29 in FIG. 2).
The sub-scan is performed by controlling the movement of the table 43 on which the reference (see) is placed, and the addressing is performed in synchronization with the sub-scan. The contents of the frame memory 41 are sequentially read and sent to the defect discrimination logic unit 44, and compared with a predetermined discrimination reference value to judge the concavo-convex state of the sample surface, and the judgment result is displayed or outputted by the output unit 45. Hard copied.

【0012】次に、作用を説明する。図4はラインミラ
ー33および第2のビームスプリッタを含む要部の構成
図であり、図5はその拡大概念図である。レーザ光P2
のビーム幅は、ラインミラー33の短手方向の幅よりも
広いため、その大部分が透明体26を透過して第2のビ
ームスプリッタ27に到達し、さらに、この第2のビー
ムスプリッタ27を通り抜ける光(以下「第1のレーザ
光」)P2 と反射される光(以下「第2のレーザ
光」)P2bとに分かれる。
Next, the operation will be described. 4 is a configuration diagram of a main part including the line mirror 33 and the second beam splitter, and FIG. 5 is an enlarged conceptual diagram thereof. Laser light P 2
Since the beam width of the beam is wider than the width of the line mirror 33 in the lateral direction, most of the beam passes through the transparent body 26 and reaches the second beam splitter 27. Light that passes through (hereinafter referred to as “first laser light”) P 2 a And reflected light (hereinafter referred to as “second laser light”) P 2 b.

【0013】第1のレーザ光P2 の一部は試料29の
表面で反射して第1の反射レーザ光(以下「第1の反射
光」)P3 となり、また、第2のレーザ光P2 の一
部はラインミラー33で反射して第2の反射レーザ光
(以下「第1の反射光」)P3 となり、何れも入射し
てきた経路上を逆向きに進む。すなわち、反射光P
3 は、第1の反射光P3 と第2の反射光P3 の干渉
光となるから、これら2つの反射光P3 、P3bの光
路差、従って、第2のビームスプリッタ27から試料2
9までの距離Laと第2のビームスプリッタ27からラ
インミラー33までの距離Lbとの差ΔLに応じた信号
が光検知器(図2の符号32参照)から取り出されるこ
とになる。
First laser beam P 2 a Is reflected by the surface of the sample 29 and the first reflected laser light (hereinafter referred to as “first reflected light”) P 3 a And the second laser beam P 2 b Of the second reflected laser light (hereinafter referred to as “first reflected light”) P 3 b after being reflected by the line mirror 33. , And both travel in the opposite direction on the incoming path. That is, the reflected light P
3 is the first reflected light P 3 a And the second reflected light P 3 b Of the two reflected light P 3 a , P 3 b from the second beam splitter 27 to the sample 2
A signal corresponding to the difference ΔL between the distance La up to 9 and the distance Lb from the second beam splitter 27 to the line mirror 33 is extracted from the photodetector (see reference numeral 32 in FIG. 2).

【0014】例えば、図6に示すように、試料29の表
面に高さLcの凸部29aがあった場合には、第2のビ
ームスプリッタ27から試料29までの距離Laが、正
常な走査位置「イ」に対して距離Lcだけ減少し、ある
いは、凹部の場合には増加する結果、光検知器(図2の
符号32参照)の出力信号が、図7に示すように変化
(干渉波形)することになる。
For example, as shown in FIG. 6, when the surface of the sample 29 has a convex portion 29a of height Lc, the distance La from the second beam splitter 27 to the sample 29 is the normal scanning position. As a result of decreasing the distance Lc with respect to "a" or increasing it in the case of a concave portion, the output signal of the photodetector (see reference numeral 32 in FIG. 2) changes as shown in FIG. 7 (interference waveform). Will be done.

【0015】以上のように、本実施例では、対物レンズ
25と試料29の間にラインミラー33および第2のビ
ームスプリッタ27を配置し、入射レーザ光P2 を第2
のビームスプリッタ27で2方向に分け、一方のレーザ
光P2 を試料29に照射すると共に、他方のレーザ光
2 をラインミラー33に照射するように構成したの
で、試料29の表面からの反射光P3 とラインミラー
33からの反射光P3 との干渉光(P3)を光検知器
32で検知でき、干渉光の光強度から試料29の表面状
態(凹凸)を精度よく観測できる。
As described above, in the present embodiment, the line mirror 33 and the second beam splitter 27 are arranged between the objective lens 25 and the sample 29, and the incident laser light P 2 is emitted to the second position.
Of the laser beam P 2 a While irradiating the sample 29 with the other laser beam P 2 b Since the line mirror 33 is irradiated with the light, the reflected light P 3 a from the surface of the sample 29 is reflected. And the reflected light P 3 b from the line mirror 33 The interference light (P 3 ) with the light can be detected by the photodetector 32, and the surface state (concavities and convexities) of the sample 29 can be accurately observed from the light intensity of the interference light.

【0016】しかも、ラインミラー33の長手方向とレ
ーザ光P2 の(主)走査方向とが一致しているので、走
査軌跡に沿った連続的な観測が可能であり、検査工数を
大幅に削減することができる。図8は、フレームメモリ
41の格納内容を示すイメージ図であり、観測結果を2
次元的に展開した図である。便宜的に示す3つの干渉縞
はそれぞれ試料表面の凹凸に対応する。縞模様から高さ
を知ることができ、基準に満たないものを不良品として
判別できる。
Moreover, since the longitudinal direction of the line mirror 33 and the (main) scanning direction of the laser beam P 2 coincide with each other, continuous observation along the scanning locus is possible, and the number of inspection steps is greatly reduced. can do. FIG. 8 is an image diagram showing the contents stored in the frame memory 41.
It is the figure developed dimensionally. The three interference fringes shown for convenience respectively correspond to the unevenness on the sample surface. The height can be known from the striped pattern, and a product that does not meet the standard can be identified as a defective product.

【0017】なお、上記実施例において、光検知器32
の手前に設けたピンホール板30は、図9に示すよう
に、反射光P3 の光軸中心部分を切り出すためのもの
で、試料29の表面を照射するレーザ光P2 のビーム軸
を絞り込んだのと同様な効果(分解能の向上)を得るた
めのものである。また、上記実施例では、第2のビーム
スプリッタ27を単独の部品としているが、これに限る
ものではなく、図10に示すように、一方面にラインミ
ラー33を取り付けた(あるいは蒸着した)ガラス等の
透明体26′の他方面に、第2のビームスプリッタ2
7′を取り付けるようにしてもよい。
In the above embodiment, the photo detector 32
As shown in FIG. 9, the pinhole plate 30 provided in front of is for cutting out the central portion of the optical axis of the reflected light P 3 , and narrows down the beam axis of the laser light P 2 irradiating the surface of the sample 29. This is to obtain the same effect (improvement of resolution). In addition, although the second beam splitter 27 is a single component in the above embodiment, the invention is not limited to this. As shown in FIG. 10, a glass having a line mirror 33 attached (or vapor-deposited) on one surface thereof is used. On the other side of the transparent body 26 'such as the second beam splitter 2
You may make it attach 7 '.

【0018】[0018]

【発明の効果】本発明によれば、以上のように構成した
ので、充分な検査精度で、且つ検査工数を大幅に削減で
きる優れた表面状態検査装置を提供できる。
According to the present invention, since it is configured as described above, it is possible to provide an excellent surface condition inspection apparatus with sufficient inspection accuracy and capable of greatly reducing the inspection man-hours.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の原理構成図である。FIG. 1 is a principle configuration diagram of the present invention.

【図2】一実施例の光学系の構成図である。FIG. 2 is a configuration diagram of an optical system of an example.

【図3】一実施例の信号処理系を含む構成図である。FIG. 3 is a configuration diagram including a signal processing system according to an embodiment.

【図4】一実施例の要部構成図である。FIG. 4 is a configuration diagram of a main part of an embodiment.

【図5】一実施例の要部概念図である。FIG. 5 is a conceptual diagram of a main part of one embodiment.

【図6】一実施例の測定概念図である。FIG. 6 is a measurement conceptual diagram of an example.

【図7】一実施例の試料の表面状態と光検知器の出力信
号との関係図である。
FIG. 7 is a relationship diagram between the surface state of the sample and the output signal of the photodetector in one example.

【図8】一実施例のフレームメモリの格納内容のイメー
ジ図である。
FIG. 8 is an image diagram of stored contents of a frame memory according to an embodiment.

【図9】一実施例のピンホール板の構成図である。FIG. 9 is a configuration diagram of a pinhole plate according to an embodiment.

【図10】一実施例の第2のビームスプリッタの他の構
成図である。
FIG. 10 is another configuration diagram of the second beam splitter of the embodiment.

【符号の説明】[Explanation of symbols]

1:対物レンズ 2:第1のビームスプリッタ 3:含む光学系 4:レーザ光 5:試料 6:反射光 7:結像レンズ 8:光検知器 9:ラインミラー 10:第2のビームスプリッタ 1: Objective Lens 2: First Beam Splitter 3: Optical System Including 4: Laser Light 5: Sample 6: Reflected Light 7: Imaging Lens 8: Photodetector 9: Line Mirror 10: Second Beam Splitter

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】対物レンズ(1)や第1のビームスプリッ
タ(2)を含む光学系(3)を介してレーザ光(4)を
試料(5)の表面に照射し、 該試料(5)の表面からの反射光(6)を結像レンズ
(7)を介して光検知器(8)に導き、 該光検知器(8)の出力信号に基づいて前記試料(5)
の表面状態を検査する装置において、 前記対物レンズ(1)によって絞り込まれた前記レーザ
光(4)のビーム直径よりも短手方向の幅が狭く、且
つ、長手方向が前記レーザ光(4)の走査方向に一致す
るラインミラー(9)を備え、 該ラインミラー(9)を前記対物レンズ(1)と前記試
料(5)の間で、且つ、前記レーザ光(4)に晒される
場所に配置し、 さらに、該ラインミラー(9)と前記試料(5)の間に
第2のビームスプリッタ(10)を配置したことを特徴
とする表面状態検査装置。
1. A surface of a sample (5) is irradiated with a laser beam (4) through an optical system (3) including an objective lens (1) and a first beam splitter (2) to obtain the sample (5). The reflected light (6) from the surface of the sample is guided to the photodetector (8) through the imaging lens (7), and the sample (5) is output based on the output signal of the photodetector (8).
In the device for inspecting the surface state of the laser beam (4), the width of the laser beam (4) narrowed by the objective lens (1) is narrower than the beam diameter of the laser beam (4) and the longitudinal direction of the laser beam (4) is smaller. A line mirror (9) that coincides with the scanning direction is provided, and the line mirror (9) is arranged between the objective lens (1) and the sample (5) and at a location exposed to the laser light (4). Further, a surface state inspection device characterized in that a second beam splitter (10) is arranged between the line mirror (9) and the sample (5).
【請求項2】前記光検知器の直前にピンホールを配置
し、該ピンホールの直径を前記ラインミラーの短手方向
の幅と略同等か若しくは小さくしたことを特徴とする請
求項1記載の表面状態検査装置。
2. The pinhole is arranged immediately before the photodetector, and the diameter of the pinhole is substantially equal to or smaller than the width of the line mirror in the lateral direction. Surface condition inspection device.
【請求項3】前記ラインミラーを透明体の一方面に取り
付けると共に、該透明体の他方面に前記第2のビームス
プリッタを取り付けたことを特徴とする請求項1記載の
表面状態検査装置。
3. The surface state inspection apparatus according to claim 1, wherein the line mirror is attached to one surface of the transparent body, and the second beam splitter is attached to the other surface of the transparent body.
JP5145795A 1993-06-17 1993-06-17 Surface-state inspection apparatus Withdrawn JPH074938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5145795A JPH074938A (en) 1993-06-17 1993-06-17 Surface-state inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5145795A JPH074938A (en) 1993-06-17 1993-06-17 Surface-state inspection apparatus

Publications (1)

Publication Number Publication Date
JPH074938A true JPH074938A (en) 1995-01-10

Family

ID=15393334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5145795A Withdrawn JPH074938A (en) 1993-06-17 1993-06-17 Surface-state inspection apparatus

Country Status (1)

Country Link
JP (1) JPH074938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004053905B4 (en) * 2004-11-05 2007-10-11 My Optical Systems Gmbh Method for the contactless detection of geometric properties of an object surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004053905B4 (en) * 2004-11-05 2007-10-11 My Optical Systems Gmbh Method for the contactless detection of geometric properties of an object surface

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