JPH0748365B2 - Ion implanter - Google Patents

Description

TECHNICAL FIELD The present invention relates to an ion implantation apparatus for implanting impurities into a semiconductor wafer in a semiconductor device manufacturing apparatus.

[Conventional technology]

Conventionally, this type of ion implantation apparatus has a mechanism in which a plurality of wafers are fixed to a wafer fixed disk, the wafer fixed disk is rotated, and an ion beam is electrically scanned in the X direction to implant impurities into a semiconductor wafer. . FIG. 3 shows a perspective view of a conventional device.

[Problems to be solved by the invention] Since the conventional ion implanter described above is used for badge processing, the number of wafers that can be processed in one batch will decrease as the diameter of semiconductor wafers further increases. However, the size of the device becomes large when trying to process. Further, there is a drawback that it becomes difficult to electrically scan the ion beam when the beam current becomes large.

[Means for solving problems]

In order to achieve the above object, the ion implantation apparatus according to the present invention has a wafer fixing disk, a platen, a rotation driving unit, and a movement driving unit, and applies a stationary ion beam spot to a semiconductor wafer, An ion implanter for implanting impurities into the wafer, wherein a wafer fixing disk supports a single semiconductor wafer at a position irradiated with an ion beam, and a platen rotatably supports the wafer fixing disk. The rotation drive unit rotates the wafer fixed disk on the platen to rotate the semiconductor wafer with respect to the ion beam.The movement drive unit moves the semiconductor wafer supported on the wafer fixed disk. This is a semiconductor wafer that moves the platen in the radial direction by changing the speed and moves linearly while rotating. When the spot irradiation position of the ion beam with respect to C is displaced from the vicinity of the center of the wafer to the outer peripheral side, it has a function of reducing the moving speed of the platen.

〔Example〕

 Next, the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view of an embodiment of the present invention. Platen 1
Is supported by a platen support plate 7 as a movement drive unit, and the angle between the platen 1 and the platen support plate 7 can be changed by a joint portion. A wafer fixing disk 2 is attached to the platen 1, and a semiconductor wafer 4 is fixed by a wafer holder 9. The wafer fixing disk 2 is provided with a cooling mechanism so as to withstand a high current ion beam.

A motor 5 as a rotation driving unit is attached to the back surface of the platen 1, and the motor 5 rotates the wafer fixing disk 2 at high speed in the wafer fixing disk rotating direction 9. At the same time, the platen 1 is moved vertically in the platen vertical movement direction 6. In the present invention, the ion beam 8
Semiconductor wafer 4 to be moved without being scanned
It is designed to radiate from a stationary position so that a spot is applied to the surface of. Therefore, when the platen 1 is moved up and down in the vertical direction 6 of the platen, the semiconductor wafer 4 is rotated and relatively displaced with respect to the stationary ion beam 8, and the ions of the ion beam 8 are applied to the surface thereof. The beam spot 10 hits, and impurities are implanted (see FIG. 2). FIG. 2 is an explanatory diagram of the wafer operation. As shown in FIG. 2, when the ion beam spot 10 hits the outer periphery of the semiconductor wafer 4, the vertical moving velocity level 12 is changed to be low at a low speed and near the center at a high speed so that impurities are uniformly distributed in the plane of the semiconductor wafer 4. It becomes possible to inject.

〔The invention's effect〕

As described above, according to the present invention, a semiconductor wafer is independently electrically fixed to a wafer fixing disk, and is electrically scanned by rotating and vertically moving and implanting impurities into the wafer without electrically scanning the ion beam. It is also possible to perform implantation with a high current ion beam, which is difficult to achieve.
Also, since the single wafer processing allows the wafer to have a larger diameter, it does not take up a floor space and the wafer can be handled easily, so that the device can be constructed at a low cost, and the ion can be implanted into the large diameter wafer with a space-saving and simple mechanism. it can.

Further, the relative velocity of the semiconductor wafer with respect to the ion beam is changed to be low when the ion beam is in the vicinity of the outer periphery of the wafer and high when the ion beam is in the vicinity of the center of the wafer. Even if the peripheral velocities are different from each other, there is an effect that the ion implantation can be uniformly performed at the center and the outer periphery of the wafer.

[Brief description of drawings]

FIG. 1 is a perspective view of an ion implantation apparatus of the present invention, FIG. 2 is a diagram for explaining a wafer operation in the ion implantation apparatus of the present invention, and FIG. 3 is a perspective view of a conventional ion implantation apparatus. 1 ... Platen, 2 ... Wafer fixing disk, 3 ...
Wafer holder, 4 ... Semiconductor wafer, 5 ... Motor, 6 ... Platen vertical movement direction, 7 ... Platen support plate, 8 ... Ion beam, 9 ... Wafer fixed disk rotation direction, 10 ... Ion beam spot , 11 …… Wafer vertical movement range, 12 …… Vertical movement speed level, 13 …… Ion beam scanning direction.

Claims (1)

[Claims] 1. An ion implantation apparatus having a wafer fixing disk, a platen, a rotation driving unit, and a movement driving unit, which applies a stationary ion beam spot to a semiconductor wafer and implants impurities into the wafer. The wafer fixed disk supports a single semiconductor wafer at the position where the ion beam is irradiated, the platen supports the wafer fixed disk rotatably, and the rotation drive unit is on the platen. The wafer drive disk is driven to rotate to rotate the semiconductor wafer with respect to the ion beam. The movement drive unit moves the platen in the radial direction of the semiconductor wafer supported on the wafer support disk by changing the speed. The spot irradiation position of the ion beam on the semiconductor wafer that is linearly displaced while rotating is An ion implanter having a function of decelerating the moving speed of the platen when the wafer is displaced from the vicinity of the center to the outer peripheral side.