JPH0741939A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To enable film to be uniformly formed on the substrate having a large area by disposing the first and the second magnetic field generating means and introducing uniformly the plasma stream of a heating means to the surface of the starting material for vapor deposition in the equal state of a magnetic line of force on the surface of the starting material. CONSTITUTION:This vapor deposition device is composed of a film forming chamber 1, a substrate to be coated disposed therein and a heating means heating the starting matrials for vapor deposition 21, 22 and 23. The heating means is composed of plasma guns 41, 42 and 43 generating arc discharge plasmas 51, 52 and 53. Then, the plasma streams 51, 52 and 53 are introduced to the starting materials for vapor deposition 21, 22 and 23 by coils 61, 62 and 53 being the first magnetic field generating means. And, the magnetic field generating means 11 and 12 are disposed outside the two plasma guns 41 and 43 located at the most outside to control the magnetic field due to the first magnetic field generating means. In this way, the shape and the density at the time of bombering of the plural each plasma streams 51, 52 and 53 to the starting materials 21, 22 and 23 are uniformized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition apparatus which utilizes arc discharge and includes ion plating, and more particularly to a vapor deposition apparatus which continuously forms a large area substrate.

[0002]

2. Description of the Related Art Conventionally, a vapor deposition apparatus has been widely used as a film forming apparatus for optical thin films, decorative thin films, hard coating thin films, flat panel display thin films and the like.
In addition, recently, a hollow cathode type gun and a pressure gradient type plasma gun are provided, and a plasma flow generated by arc discharge is guided to a raw material by using a magnetic field to heat the raw material, and the high reactivity of the plasma flow is utilized. A vapor deposition device for performing high-speed ion plating has been developed.

Further, it is known that in the case of depositing a film on a large-area substrate by using these plasma guns, it can be realized by arranging a plurality of these guns and constructing an apparatus. However, when a device for forming a uniform film on a large-area substrate by arranging a plurality of plasma guns is configured, there are the following problems.

FIG. 6 shows a conventional example in which three guns are arranged. The plasma flows 51, 52, 53 generated from the respective guns 41, 42, 43 are the coils 61, 6 of the adjacent plasma guns.
The material 2 in the center is affected by the magnetic field created by 2.63.
The shape of the lines of magnetic force and the magnetic flux density are different on the upper and the outer raw materials 21 and 23. That is, on the outer raw materials 21 and 23, the lines of magnetic force spread outward, so the shape of the plasma 51, 53 when hitting the raw materials 21 and 23 also spreads outward,
Plasma density is also reduced. Therefore, the outer raw material 21,
The film forming speed above 23 is slower than that above the central raw material 22, and a uniform film formation cannot be achieved.

Further, since reactive vapor deposition utilizes the fact that vaporized particles are ionized by plasma, there is a problem that when the plasma density is different on the raw material of each gun, the distribution of reaction also occurs and the distribution of film quality occurs. .

[0006]

Therefore, in order to uniformly form a film having a uniform reaction state on a large-area substrate in this type of vapor deposition apparatus, the shapes of magnetic lines of force and the magnetic flux densities on the respective raw material surfaces are made equal. Therefore, it is necessary to equalize the shape and density of plasma.

[0007]

The present invention has been made to solve the above-mentioned problems, and includes a film forming chamber for forming a thin film by vacuum vapor deposition, and a film forming substrate arranged in the film forming chamber. A plasma gun for generating arc discharge plasma, wherein the plasma gun is provided with a plurality of plasma guns on a line, and each plasma gun has a plasma generated by the plasma gun. In the vapor deposition apparatus having the first magnetic field generating means for guiding the flow to the vapor deposition raw material, outside the two outermost plasma guns,
A second magnetic field generating means for adjusting a magnetic field generated by the first magnetic field generating means is provided, and a vapor deposition apparatus is provided.

FIG. 1 shows a first embodiment of the present invention, and is a plan view of a vapor deposition apparatus in which three plasma guns are arranged. FIG. 2 is a sectional view taken along the line aa 'in FIG. The vapor deposition apparatus shown in FIG. 1 includes a film forming chamber 1, raw materials 21, 22, and 23, and raw material containers 31 and 3.
2, 33 and coils 61, 62, 63 which are magnetic field generating means for guiding the plasmas 51, 52, 53 from the plasma guns 41, 42, 43 to the film forming chamber 1 side. Further, 9 in FIG. 2 indicates that the plasma 2, 51, 52, 53 introduced into the film forming chamber 1 in FIGS.
It is a permanent magnet leading to 21, 22, and 23, and is arranged corresponding to each raw material. In addition, reference numeral 14 in FIG. 2 denotes a substrate with the film-forming surface facing downward.

Further, 71, 72 and 73 are discharge gas inlets introduced into the plasma gun, and 81, 82 and 83 are reaction gas inlets introduced into the film forming chamber. And on the outer lines of the two plasma guns located at both ends,
The coils 10 and 11 which are the magnetic field generating means are included. A permanent magnet may be used instead of the coils 10 and 11 which are the second magnetic field generating means. The magnetic field strength of the second magnetic field generating means in the present invention is preferably adjustable.

FIG. 3 shows a second embodiment of the present invention, and is a plan view showing a case where three plasma guns are arranged in the vapor deposition apparatus. In the second example,
Instead of the coils 10 and 11 of the first embodiment, permanent magnets 12 and 13 as second magnetic field generating means are arranged on both sides of the film forming chamber 1. It is preferable that the permanent magnets 12 and 13 can change the influence on the plasma by changing the distance from the film forming chamber 1. Permanent magnets 12, 13
Is not particularly limited, and a coil capable of generating an equivalent magnetic field may be used, and the magnetic field strength is preferably adjustable.

In the present invention, the plasma gun 4 is not particularly limited as long as it can generate a plasma flow, such as a hollow cathode type plasma gun, a compound cathode type plasma gun, and a pressure gradient type plasma gun. The base 14 may be a flat or curved base or a film, and is not particularly limited. The material thereof is not particularly limited and glass, plastic or the like can be used. When forming a film on a large-area substrate, it is preferable to move the film in the left-right direction in FIG. When the substrate is a film, a film winding mechanism may be incorporated in the film forming chamber.

[0012]

In FIG. 1 and FIG. 2, plasma flows 51, 5
2, 53 are guided to the raw material along the magnetic lines of force created by the coils 61, 62, 63 and the permanent magnet 9. And raw material 2
Plasma streams 51, 52, 5 irradiating 1, 22, 23
The shape of No. 3 and the plasma density are determined by the shape of the lines of magnetic force on the raw materials 21, 22 and 23 and the magnetic flux density.

In order to obtain a film having a uniform film thickness and film quality on a large-area substrate, the plasma flows 51, 52, 53 generated from the guns 41, 42, 43 have a shape and a shape corresponding to the raw materials 21, 22, 23. It is necessary to make the plasma densities equal.
It is possible to make the film thickness in the width direction (vertical direction in FIG. 1) on the substrate uniform by equalizing the evaporation rate from each raw material, and to make the plasma density on each raw material surface equal in the case of reactive vapor deposition. By doing so, a film having a uniform reaction state is formed on the substrate.

In the present invention, the two outermost plasma guns 41, 4 of the plasma guns arranged in a straight line are arranged.
By the magnetic fields of the second magnetic field generating means 10 and 11 respectively arranged on the outer lines of 3, it is possible to make the directions and magnetic flux densities of the magnetic fields on the respective raw materials 21, 22 and 23 equal, and therefore the respective plasma flows 51, 52 and 53 are raw materials 2
Since the shapes and densities corresponding to 1, 22, and 23 can be made equal, a uniform film having a uniform reaction state can be formed on a large-area substrate.

Further, in the present invention, as shown in FIG. 3, permanent magnets 12 and 13 similar to the permanent magnet 9 of the first embodiment are arranged on both sides of the film forming chamber 1 as the second magnetic field generating means. The same effect as the first embodiment can be obtained.

[0016]

EXAMPLE 3 In FIG. 4, three plasma guns are arranged according to the first example shown in FIGS.
It is an implementation result when forming an O thin film. The strength of the magnetic fields of the coils 10 and 11 as the second magnetic field generating means was set to be equal to that of the coil 6. On the other hand, FIG. 5 shows the results when an ITO thin film was formed on a glass substrate according to the conventional example shown in FIG. The results of carrying out the present invention are that the plasma density and shape on each raw material surface are the same as compared with the conventional method, so that the film forming rate and reaction state on each raw material surface are also equal, and therefore the film thickness on the large area substrate is equal. , A uniform film can be obtained in both specific resistance.

[0017]

According to the present invention, by adopting the above-mentioned constitution, even when a plurality of plasma guns are arranged, the shapes and densities of the respective plasma streams when hitting the raw materials can be made uniform, so that the reaction state on a large area substrate can be achieved. A uniform and uniform film can be formed.

[Brief description of drawings]

FIG. 1 is a plan view of a first embodiment according to the present invention.

FIG. 2 is a sectional view of a first embodiment according to the present invention.

FIG. 3 is a plan view of a second embodiment according to the present invention.

FIG. 4 is a diagram showing a state of film formation on a substrate by the apparatus of the present invention.

FIG. 5 is a diagram showing a state of film formation on a substrate by a conventional apparatus.

FIG. 6 is a plan view of a conventional device.

[Explanation of symbols]

1: film forming chamber 2, 21, 22, 23: raw material 3, 31, 32, 33: raw material container 4, 41, 42, 43: plasma gun 5, 51, 52, 53: plasma 6, 61, 62, 63 : Coil 7, 71, 72, 73: Discharge gas introduction port introduced into plasma gun 8, 81, 82, 83: Reaction gas introduction port introduced into film forming chamber 9, 12, 13: Permanent magnet 14: Substrate

Claims (3)

[Claims] 1. A film forming chamber for forming a thin film by vacuum evaporation, a film forming substrate arranged in the film forming chamber, and means for heating an evaporation source, the heating means generating arc discharge plasma. A plasma gun, wherein a plurality of plasma guns are provided on a line, and each plasma gun has a first magnetic field generating means for guiding a plasma flow by the plasma gun to a vapor deposition material. A vapor deposition apparatus characterized in that a second magnetic field generating means for adjusting a magnetic field by the first magnetic field generating means is arranged outside two plasma guns located outside. 2. The vapor deposition apparatus according to claim 1, wherein the second magnetic field generating means are respectively arranged on the outer lines of the two outermost plasma guns. 3. The vapor deposition apparatus according to claim 1, wherein the second magnetic field generating means are arranged on both sides of the film forming chamber.