JPH0740548B2 - Resist curing device - Google Patents
Resist curing deviceInfo
- Publication number
- JPH0740548B2 JPH0740548B2 JP62099664A JP9966487A JPH0740548B2 JP H0740548 B2 JPH0740548 B2 JP H0740548B2 JP 62099664 A JP62099664 A JP 62099664A JP 9966487 A JP9966487 A JP 9966487A JP H0740548 B2 JPH0740548 B2 JP H0740548B2
- Authority
- JP
- Japan
- Prior art keywords
- heating plate
- wafer
- heating
- temperature
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、半導体ウェーハの加熱部分を改良したレジス
ト硬化装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a resist curing apparatus in which a heated portion of a semiconductor wafer is improved.
（従来の技術） 半導体ウェーハ上のレジストをUV光で硬化する場合、加
熱板（ホットプレート）の急激な加熱と急激な冷却（降
温）を行ない、スループットを改善する必要がある。(Prior Art) When curing a resist on a semiconductor wafer with UV light, it is necessary to perform rapid heating and rapid cooling (cooling) of a heating plate (hot plate) to improve throughput.
（発明が解決しようとする問題点） 従来の電熱ヒータ方式では、上記温度の急激な昇温、降
温はむずかしい。(Problems to be Solved by the Invention) In the conventional electric heater system, it is difficult to rapidly raise and lower the temperature.
本発明の目的は、電磁誘導方式加熱を利用し、加熱板に
クリアーカーボンを使用することによりウェーハの昇
温、降温を急激に行なうようにしたレジスト硬化装置を
提供することにある。An object of the present invention is to provide a resist curing apparatus that utilizes electromagnetic induction heating and uses a clear carbon for a heating plate to rapidly raise and lower the temperature of a wafer.
（問題点を解決するための手段） 本発明はウェーハを加熱板上で加熱し、かつUV光を照射
してウェーハ上のレジストを硬化させる装置に関するも
ので、前記加熱板としてクリアカーボンを用いると共
に、この加熱板近くに電流コイルを設けて、加熱板を電
磁誘導加熱することを特徴とする。(Means for Solving Problems) The present invention relates to an apparatus for heating a wafer on a heating plate, and irradiating UV light to cure a resist on the wafer, and using clear carbon as the heating plate. A current coil is provided near the heating plate to heat the heating plate by electromagnetic induction.
（作用） 本発明では、加熱板の昇温、降温スピードを早くするた
めに電磁誘導方式加熱を利用し、加熱板に熱伝導の良
い、クリンルーム用クリアカーボンを使用したことを特
徴としており、これによってスループットを改善でき
た。(Operation) In the present invention, the heating plate is heated, the electromagnetic induction heating is used to accelerate the cooling rate, good heat conduction in the heating plate, characterized by using clear carbon for clean room, Through this, the throughput could be improved.
（実施例） 以下に本発明の一実施例を図面を参照して説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図において、１はクリアカーボン製の加熱板で、ウ
ェーハの形に合せて円板のものを用いており、ウェーハ
の直径（最大）より約1.2倍の直径を有するように大き
く作る。In FIG. 1, reference numeral 1 is a heating plate made of clear carbon, which is a disc having a shape corresponding to the shape of the wafer. The heating plate is made to have a diameter about 1.2 times larger than the diameter (maximum) of the wafer.
すなわち、ある大きさのウェーハ（例えば６″）を加熱
する場合加熱板１の外側の温度が低くなりやすいので、
ウェーハの直径より約1.2倍大きくすることにより、ウ
ェーハ上の温度ムラを均一になるようにしている。That is, when a wafer of a certain size (for example, 6 ″) is heated, the temperature outside the heating plate 1 tends to be low,
By making the diameter 1.2 times larger than the diameter of the wafer, the temperature unevenness on the wafer is made uniform.
２はウェーハ保持用の溝で、加熱板１上に同心状に設け
られその最外側の溝は、加熱板１中に穿設された通気孔
７を介して図示しない真空ポンプに連通する。また内側
の溝は、径方向に形成された溝2aにより最外側の溝と連
通する。この溝２は、幅2mm、深さ0.5mm程度のもので、
その上面に載置されるウェーハを吸着保持する。また、
この溝は加熱時におけるウェーハの温度ムラを少なくす
る働きをも持つ。A wafer holding groove 2 is provided concentrically on the heating plate 1, and the outermost groove thereof communicates with a vacuum pump (not shown) through a ventilation hole 7 formed in the heating plate 1. Further, the inner groove communicates with the outermost groove by the groove 2a formed in the radial direction. This groove 2 has a width of about 2 mm and a depth of about 0.5 mm,
A wafer placed on the upper surface is suction-held. Also,
This groove also has the function of reducing the temperature unevenness of the wafer during heating.
３は温度センサーの挿入穴で、加熱板１の温度を測定す
るべく、加熱板１内に、その中心方向ら2.5φ×40lの穴
を堀って形成し、この中に温度センサーを挿入する。Reference numeral 3 is an insertion hole for a temperature sensor. In order to measure the temperature of the heating plate 1, a hole of 2.5φ × 40l is formed in the heating plate 1 from its center direction, and the temperature sensor is inserted therein. .
４はピン貫通孔で、加熱板１の下側に位置する図示しな
い水冷却板（材質Al）上に設けられた複数本のピンを、
エアシリンダー等による水冷板の上昇に伴い加熱板１上
に突出させ、ウェーハを持ち上げて図示しないウェーハ
搬送機構にチャックさせ、外部に搬出させるために用い
る。なお、水冷却板は上述した上昇時、加熱板１と接触
し、急速降温させる役目を持つ。５は固定板で、加熱板
１を図示しないフレームに固定するために用いられる。
なお、固定具としては断熱性セラミック材によるものを
用いる。Reference numeral 4 denotes a pin through hole, which is provided with a plurality of pins provided on a water cooling plate (material Al) (not shown) located below the heating plate 1,
It is used to project the wafer onto the heating plate 1 as the water cooling plate is lifted by an air cylinder or the like, lift the wafer, chuck it by a wafer transfer mechanism (not shown), and carry it out to the outside. The water cooling plate comes into contact with the heating plate 1 at the time of rising as described above, and has a role of rapidly lowering the temperature. A fixing plate 5 is used to fix the heating plate 1 to a frame (not shown).
As the fixture, one made of a heat insulating ceramic material is used.
上記加熱板１に対して、従来の電熱ヒータに代って、図
示しないが、電磁コイルを用い、電磁誘導により加熱板
１を急速加熱する。Although not shown, an electromagnetic coil is used for the heating plate 1 instead of the conventional electric heater to rapidly heat the heating plate 1 by electromagnetic induction.
第２図は加熱板１の材質による昇温特性を示す。この図
では加熱板１を20℃から180℃迄昇温するのに、電磁誘
導によりクリアカーボン（外形220φ、厚さ5t）を加熱
すると75秒、SUS430（外形220φ、厚さ5t）を加熱する
と250秒以上、電熱ヒータ方式にてAlを加熱（外形170
φ、厚さ7t、材質Al）した場合は、158秒かかり、昇温
特性は、クリアカーボンがヒータ方式加熱により２倍以
上、早いことを実験データが示している。第３図は降
（冷却）特性を示しており、130℃→70℃迄降温するの
にクリアーカーボンでは10秒、SUS304では17秒、ヒータ
方式では63秒かかりクリアカーボンがヒータ式より6.3
倍早いことを実験データが示している。FIG. 2 shows the temperature rising characteristics depending on the material of the heating plate 1. In this figure, when heating the heating plate 1 from 20 ° C to 180 ° C, when clear carbon (outer diameter 220φ, thickness 5t) is heated by electromagnetic induction for 75 seconds, SUS430 (outer diameter 220φ, thickness 5t) is heated. Heating Al with an electric heater method for 250 seconds or more (outer shape 170
When φ, thickness 7t, material Al), it takes 158 seconds, and the experimental data shows that the temperature rising characteristic is twice or more as fast as the clear carbon by heating with the heater method. Figure 3 shows the cooling (cooling) characteristics. It takes 10 seconds for clear carbon, 17 seconds for SUS304, and 63 seconds for the heater system to cool the temperature from 130 ° C to 70 ° C.
Experimental data show that it is twice as fast.
以上電磁誘導方式加熱を使用する場合加熱板の材質とし
てクリアスーボンを使用すれば、昇温、降温スピードが
早いことが分る。またクリアカーボンはシリコシンウェ
ーハと材質が似ており熱伝導度が良く、固有抵抗が大き
く、複雑な加工が容易で、クリンルーム用に使用でき、
ウェーハの加熱板としては最適である。When the electromagnetic induction heating is used, it can be seen that the speed of heating and cooling can be increased by using clear soot as the material of the heating plate. In addition, clear carbon is similar in material to silicocin wafer and has good thermal conductivity, large specific resistance, easy complex processing, and can be used for clean room,
It is most suitable as a heating plate for wafers.
以下、電磁誘導方式加熱に対しクリアーカーボンを加熱
板１に使用した場合の特長を列挙する。The features of the case where clear carbon is used for the heating plate 1 for electromagnetic induction heating will be listed below.
（１）加熱板は固有抵抗が高く、また熱伝導が良いので
急激な昇温、降温を実施しても加熱板上の温度ムラが少
ない。(1) Since the heating plate has a high specific resistance and good heat conduction, the temperature unevenness on the heating plate is small even when the temperature is rapidly raised or lowered.
（２）急激な昇温、降温ができるため、スループットが
大きく改善される。(2) Throughput can be greatly improved because the temperature can be rapidly raised and lowered.
（３）クリアーカーボンは複雑な加工が容易にできる。
このためウェーハの吸着溝、温度センサー挿入穴等を容
易に加工できる。(3) Complex processing can be easily performed with clear carbon.
Therefore, the suction groove of the wafer, the temperature sensor insertion hole, and the like can be easily processed.
（４）クリンルーム内で使用できる。ガスの発生、発
塵、汚れ等がなくクリーンである。また、表面はSiCで
コーティングされているため、ウェーハと材質は同じで
あり、物性的に安定する。(4) It can be used in the clean room. It is clean with no generation of gas, dust or dirt. Also, since the surface is coated with SiC, the material is the same as the wafer, and the physical properties are stable.
（５）間接加熱（非接触）であるので、寿命が長くメイ
ンテナンスが簡単である。(5) Since it is indirect heating (non-contact), it has a long life and is easy to maintain.
以上のように本発明によれば、加熱板にクリアカーボン
を用い、これを電磁誘導加熱するので、急速温度および
降温ができ、スループットを改善できる。As described above, according to the present invention, since clear carbon is used for the heating plate and this is subjected to electromagnetic induction heating, the rapid temperature and the temperature can be lowered and the throughput can be improved.
第１図は本発明によるレジスト硬化装置の一実施例に用
いる加熱板の平面図、第２図および第３図は加熱板の昇
温特性および降温特性を示す特性図である。 １…加熱板、２…ウェーハ保持用の溝 ３…温度計の挿入穴FIG. 1 is a plan view of a heating plate used in an embodiment of a resist curing apparatus according to the present invention, and FIGS. 2 and 3 are characteristic diagrams showing temperature rising characteristics and temperature falling characteristics of the heating plate. 1 ... Heating plate, 2 ... Groove for holding wafer 3 ... Thermometer insertion hole
Claims (1)
射してウェーハ上のレジストを硬化させる装置におい
て、 前記加熱板としてクリアカーボンを用いると共に、この
加熱板近くに電磁コイルを設けて、加熱板を電磁誘導加
熱することを特徴とするレジスト硬化装置。1. An apparatus for heating a wafer heating plate and irradiating UV light to cure a resist on a wafer, wherein clear carbon is used as the heating plate, and an electromagnetic coil is provided near the heating plate. A resist curing device, characterized in that a heating plate is heated by electromagnetic induction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099664A JPH0740548B2 (en) | 1987-04-24 | 1987-04-24 | Resist curing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099664A JPH0740548B2 (en) | 1987-04-24 | 1987-04-24 | Resist curing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63266824A JPS63266824A (en) | 1988-11-02 |
| JPH0740548B2 true JPH0740548B2 (en) | 1995-05-01 |
Family
ID=14253306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62099664A Expired - Fee Related JPH0740548B2 (en) | 1987-04-24 | 1987-04-24 | Resist curing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740548B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100603925B1 (en) * | 1999-01-13 | 2006-07-24 | 삼성전자주식회사 | Ashing equipment for use of semiconductor fabrication |
| JP4075527B2 (en) * | 2002-08-28 | 2008-04-16 | 日本電気株式会社 | Resist coating method and resist coating apparatus |
-
1987
- 1987-04-24 JP JP62099664A patent/JPH0740548B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63266824A (en) | 1988-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |