JPH0739228Y2 - 光加熱処理装置 - Google Patents

光加熱処理装置

Info

Publication number
JPH0739228Y2
JPH0739228Y2 JP1988156678U JP15667888U JPH0739228Y2 JP H0739228 Y2 JPH0739228 Y2 JP H0739228Y2 JP 1988156678 U JP1988156678 U JP 1988156678U JP 15667888 U JP15667888 U JP 15667888U JP H0739228 Y2 JPH0739228 Y2 JP H0739228Y2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
susceptor
transparent quartz
quartz tube
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988156678U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0276835U (enrdf_load_stackoverflow
Inventor
俊治 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1988156678U priority Critical patent/JPH0739228Y2/ja
Publication of JPH0276835U publication Critical patent/JPH0276835U/ja
Application granted granted Critical
Publication of JPH0739228Y2 publication Critical patent/JPH0739228Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Radiation Pyrometers (AREA)
JP1988156678U 1988-12-02 1988-12-02 光加熱処理装置 Expired - Lifetime JPH0739228Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988156678U JPH0739228Y2 (ja) 1988-12-02 1988-12-02 光加熱処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988156678U JPH0739228Y2 (ja) 1988-12-02 1988-12-02 光加熱処理装置

Publications (2)

Publication Number Publication Date
JPH0276835U JPH0276835U (enrdf_load_stackoverflow) 1990-06-13
JPH0739228Y2 true JPH0739228Y2 (ja) 1995-09-06

Family

ID=31435431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988156678U Expired - Lifetime JPH0739228Y2 (ja) 1988-12-02 1988-12-02 光加熱処理装置

Country Status (1)

Country Link
JP (1) JPH0739228Y2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220331A (ja) * 2013-05-07 2014-11-20 株式会社リコー 電磁波照射装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211947A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 瞬間アニ−ル装置

Also Published As

Publication number Publication date
JPH0276835U (enrdf_load_stackoverflow) 1990-06-13

Similar Documents

Publication Publication Date Title
Roozeboom et al. Rapid thermal processing systems: A review with emphasis on temperature control
WO1998038673A1 (fr) Instrument et procede de mesure de la temperature d'un substrat, procede de chauffage d'un substrat et dispositif de traitement par la chaleur
KR960013995B1 (ko) 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US6435869B2 (en) Quartz window having reinforcing ribs
US7075037B2 (en) Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer
JP2007524828A (ja) 熱光学フィルタ及びそれを用いた赤外線センサ
JP2000208503A (ja) 縦型熱処理装置
US6825615B2 (en) Lamp having a high-reflectance film for improving directivity of light and heat treatment apparatus having such a lamp
JP2010511304A (ja) 石英で密閉されたヒータアセンブリ
EP1060370A1 (en) Method and apparatus for measuring substrate temperature
CN1189948C (zh) 采用碳化硅进行红外辐射检测的方法和电路
JPH07134069A (ja) 基板温度のモニタ方法
JPH0739228Y2 (ja) 光加熱処理装置
Roozeboom et al. 9 Manufacturing Equipment Issues in Rapid Thermal Processing¹
JPH0691147B2 (ja) 接合ウエーハ検査方法
JPS6037116A (ja) 光照射炉
US6140145A (en) Integrated infrared detection system
JP3042229B2 (ja) 基板加熱装置
JP3200657B2 (ja) 赤外線センサ
Lassig et al. Kinetics of rapid thermal oxidation of silicon
Yuasa et al. Single crystal silicon micromachined pulsed infrared light source
JPS60137027A (ja) 光照射加熱方法
JPH10144618A (ja) 半導体デバイス製造用加熱装置
JPH0442025A (ja) ウェハー温度測定方法とその装置
JP2725965B2 (ja) 赤外線センサ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term