JPH0738015A - Resin-sealed semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To provided a resin-sealed semiconductor device without including any metal wire and its manufacturing method wherein the process is simplified and the cost is reduced. CONSTITUTION:Metal columns 14 of uniform heights are formed on an Al electrode of a semiconductor chip 13, for example. The semiconductor chip 13 is mounted on opposite surfaces of a lead frame 11 through a bonding agent layer 12 having the modulus of elasticity of 68Kgf/cm<2> after curing. The lead frame 11 is tightened with molds 21a, 21b and the surfaces of the metal columns 14 are pressed by the metal molds 21a, 21b. In this situation, a cavity portion is filled with resin 15 whereby a resin sealing semiconductor device is obtained in which the upper surfaces of the metal columns 14 are exposed from a sealing surface.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a resin-sealed semiconductor device and a method for manufacturing the same, and is particularly used for a wireless resin-sealed semiconductor device having no metal wire.

[0002]

2. Description of the Related Art As is well known, in a conventional resin-sealed semiconductor device, a lead frame 1 and electrodes of a semiconductor chip 2 are electrically connected by a metal wire 3 as shown in FIG. Are sealed with an insulating resin 4. After that, the lead frame 1 is cut into a predetermined length and bent into a predetermined shape.

However, in the case of this type of resin-sealed semiconductor device, since the metal wire 3 is provided in the height direction, there is a limit in reducing the thickness. Therefore, a so-called wireless resin-sealed semiconductor device having no metal wire has been proposed (for example, Japanese Patent Laid-Open No. 4-164345).

For example, as shown in FIG. 6, bump electrodes 6 such as gold bumps are formed on the electrodes of a semiconductor chip 5, the semiconductor chip 5 is mounted on a lead frame 7, and an insulating resin 8 is formed. The resin is sealed with. After that, the resin 8 on the bump electrode 6 is removed, and the external connection electrode 9 is connected to the exposed bump electrode 6 so that the bump electrode 6 can be obtained.

According to this wireless resin-sealed semiconductor device, the device can be made thin because the metal wire is not provided, and the mounting density can be improved because the lead frame 7 does not extend to the outside.

However, in the case of this resin-encapsulated semiconductor device, it is necessary to remove the resin 8 on the bump electrodes 6 after resin encapsulation, but the amount of the resin 8 on the bump electrodes 6 is not constant. Since it is not limited, there are drawbacks that complicated work is required and the cost is greatly increased.

For example, when transfer molding of the resin 8 occurs, the phenomenon that the lead frame 7 including the semiconductor chip 5 is lifted up due to the viscosity and flow of the resin 8 occurs, and therefore the amount of the resin 8 on the bump electrode 6 ( There is a difference in thickness).

Further, the semiconductor chip 5 is connected to the lead frame 7
Often, a resin adhesive is used when mounting on
Due to the difference in the thickness of the adhesive layer due to the variation in the amount of adhesive applied, the amount of resin 8 to be removed also changes.

Further, when the semiconductor chip 5 is pressed and fixed, the semiconductor chip 5 may be fixed in an inclined state due to variations in the amount of adhesive applied and uneven pressing force. The amount of resin 8 to be removed on the bump electrode 6 is different.

As described above, since the amount of the resin 8 covering the bump electrodes 6 varies, the work for removal is complicated, and the electrodes for external connection must be newly formed. Was causing a significant increase in costs.

[0011]

As described above, conventionally, since the amount of resin coating the bump electrodes varies, the work for removing the bump electrodes is complicated, and the electrodes for external connection are not provided. There is a problem in that unnecessary cost increases, such as having to be newly formed.

Therefore, an object of the present invention is to provide a resin-sealed semiconductor device which can reduce the cost and can be made thinner, and a method for manufacturing the same.

[0013]

To achieve the above object, in a resin-sealed semiconductor device of the present invention, a semiconductor chip having an electrode on its upper surface and a semiconductor chip provided on the electrode of this semiconductor chip are provided. A metal column for external connection, a substrate supporting the lower surface of the semiconductor chip, an adhesive layer for adhering the semiconductor chip on the substrate, and the semiconductor adhered on the substrate via the adhesive layer The chip is composed of a sealing body that seals the upper surface of the metal column in an exposed state.

Further, in the method of manufacturing a resin-encapsulated semiconductor device according to the present invention, an ultrafine particle metal material is laminated on the electrode provided on the upper surface of the semiconductor chip to form a metal for external connection. A step of forming a pillar, a step of adhering the lower surface of the semiconductor chip on which the metal pillar is formed onto a substrate via an adhesive layer, the semiconductor chip adhered on the substrate via the adhesive layer, And a step of sealing the upper surface of the metal pillar in an exposed state.

[0015]

According to the present invention, since the above-mentioned means enables sealing in a state where the upper surface of the electrode is exposed on the surface of the resin in advance, the work for removing the sealed resin or reforming the electrode is performed. Can be eliminated.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration of a resin-sealed semiconductor device according to the present invention. That is, in this resin-sealed semiconductor device, for example, after the semiconductor chips 13 and 13 are mounted on both surfaces of the lead frame 11 as a substrate via the adhesive layers 12 and 12, respectively, the aluminum of the semiconductor chips 13 and 13 is mounted. A configuration in which the surface of the metal column 14 formed on the (Al) electrode at a uniform height is exposed from the sealing surface and is substantially flush with the sealing surface, and is sealed by the resin 15. Has been done.

In this case, since the resin 15 is used for sealing with the upper surface of the metal column 14 exposed to the sealing surface, the metal column 14 can be used as it is as an electrode for external connection. .

That is, it is not necessary to remove the sealed resin 15 or to form an electrode for external connection on the metal pillar 14 from which the resin 15 has been removed. Adhesive layers 12, 12
As the adhesive, an adhesive having a modulus of elasticity after curing of 100 Kgf / cm ² or less, for example, a silicone resin SDA6531 (68 Kgf / cm ² ) manufactured by Toray Dow Corning Co., Ltd. is used.

The metal pillar 14 is, for example, Japanese Patent Application No. 4-837.
By the deposition method disclosed in No. 3, ultrafine particles of gold (A
It is formed by stacking a metal material such as u) or copper (Cu) on the Al electrode.

In this resin-sealed semiconductor device, however, each of the semiconductor chips 13 and 13 is connected to an individual printed circuit board, for example, via the metal pillar 14, that is, sandwiched between two printed circuit boards. To be implemented.

Next, a method of manufacturing the above resin-encapsulated semiconductor device will be described. FIG. 2 shows an outline of the manufacturing process. First, the metal columns 14 having a uniform height are formed on the Al electrodes of the semiconductor chips 13 and 13 by the above-described deposition method. Then, the semiconductor chips 13 and 13 on which the metal columns 14 are formed are
Are mounted on both surfaces via adhesive layers 12 and 12 respectively (FIG. 9A).

In this case, the semiconductor chips 13 and 13 are mounted on the lead frame 11 by mounting the respective metal pillars 1.
4 is mounted so that the upper surface of the mold 4 is slightly higher than the depth of the cavity of the molds 21a and 21b described later.

For example, the depth of the cavity of each of the molds 21a and 21b is set to 300 μm, and the semiconductor chip 1
When the thickness of 3 is 200 μm and the height of the metal pillar 14 is 50 μm, the adhesive layers 12, 12 are formed on the lead frame 11.
Is applied with a thickness of 50 μm or more, and the semiconductor chips 13 and 13 are mounted thereon.

The upper and lower sides of the lead frame 11 on which the semiconductor chips 13 and 13 are mounted are the molds 21a and 2a.
The mold is clamped by 1b ((b) of the same figure). Then, first, the tip (upper surface) of the metal column 14 is moved to the molds 21a and 21b
Are abutted respectively. In this case, the adhesive layers 12, 12
Has a modulus of elasticity of 68 Kgf / cm ² after curing,
Since it is highly flexible, it can be easily deformed.

That is, the adhesive layers 12 and 12 are deformed as shown in the drawing by gradually moving the molds 21a and 21b with the tips of the metal columns 14 in contact with each other.
Then, the semiconductor chips 13 and 13 are sunk until the molds 21 a and 21 b come into contact with the lead frame 11.

At this time, the semiconductor chips 13, 13
Since the forces for restoring the adhesive layers 12, 12 are applied to each of them, the tips of the metal columns 14 are pressed by the molds 21a, 21b.

In this state, the surface of the metal column 14 shown in FIG. 1 is exposed from the sealing surface and is almost the same as the sealing surface by filling the resin 15 into the cavities in the molds 21a and 21b. The sealing can be performed in a flat state.

As described above, since the resin 15 is filled with the tips of the metal columns 14 being pressed by the molds 21a and 21b, the molds 21a and 2b are filled.
The resin 15 does not flow between the 1b and the metal column 14, and the surface of the metal column 14 is not covered with the resin 15.

Since the semiconductor chips 13 and 13 are mounted on both sides of the lead frame 11,
Molds 21a, 21 each having a cavity portion
When using b, the lead frame 1
1 is not deformed.

As described above, the metal column is previously sealed so that the upper surface is exposed on the surface of the resin. That is, the resin is filled while the tip of the metal column is pressed by the mold. As a result, it is possible to prevent the surface of the metal column from being covered with the resin, so that it is possible to eliminate the work of removing the sealed resin and re-forming the electrodes.
Therefore, the manufacturing process can be simplified and the wireless resin-sealed semiconductor device can be obtained at low cost.

Moreover, since the metal column can be used as it is as an electrode for external connection, it can be made more advantageous for thinning. In the above embodiment,
Although the resin-sealed semiconductor device in which the semiconductor chips are mounted on both sides of the lead frame has been described as an example, the present invention is not limited to this, and a resin-sealed semiconductor device in which the semiconductor chips are mounted on only one side of the lead frame is also applicable. Easy to get.

FIG. 3 shows a schematic structure of a resin-sealed semiconductor device in which a semiconductor chip is mounted only on one surface of a lead frame. That is, in this resin-sealed semiconductor device, for example, after the semiconductor chip 33 is mounted on the upper surface of the lead frame 31 serving as a substrate via the adhesive layer 32, the semiconductor chip 33 has a uniform height on the Al electrode. The surface of the metal column 34 formed in 1 is exposed from the sealing surface and is sealed with the resin 35 in a state where the sealing surface is substantially flush with the sealing surface.

In this case, for example, as shown in FIG. 4, a mold 41a having a cavity is provided on the upper side, and a flat mold 41b having no cavity is used on the lower side. The resin 35 is filled so as to be supported by the mold 41b.

As a result, the lead frame 31 and the mold 4 are
The resin 35 flows between the metal pillar 34 and the metal mold 41a of the semiconductor chip 33 sandwiched between the lead frame 3a and the lead frame 3a.
The 1 can be sealed without being deformed.
Of course, various modifications can be made without departing from the scope of the invention.

[0035]

As described above in detail, according to the present invention, it is possible to provide a resin-sealed semiconductor device which can reduce the cost and can be made thinner, and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an outline of a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 2 is a diagram which similarly illustrates the manufacturing method.

FIG. 3 is a configuration diagram showing an outline of a resin-sealed semiconductor device according to another embodiment of the present invention.

FIG. 4 is a diagram which is similarly shown for explaining the manufacturing method.

FIG. 5 is a cross-sectional view of an assembly process of a resin-encapsulated semiconductor device having a metal wire, which is shown for explaining a conventional technique and its problems.

FIG. 6 is a sectional view of an assembling process of a resin-sealed semiconductor device without metal wires.

[Explanation of symbols]

11, 31 ... Lead frame, 12, 32 ... Adhesive layer,
13, 33 ... Semiconductor chip, 14, 34 ... Metal pillar, 1
5, 35 ... Resin, 21a, 21b, 41a, 41b ... Mold.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 21/56 H 8617-4M // B29K 105: 20 B29L 31:34

Claims (5)

[Claims] 1. A semiconductor chip having an electrode on an upper surface thereof, a metal column for external connection provided on the electrode of the semiconductor chip, a substrate supporting a lower surface of the semiconductor chip, and the semiconductor on the substrate. An adhesive layer for adhering the chip, and a sealing body for encapsulating the semiconductor chip adhered on the substrate via the adhesive layer with the upper surface of the metal pillar exposed. And a resin-encapsulated semiconductor device. 2. The resin-encapsulated semiconductor device according to claim 1, wherein the metal pillar is formed by laminating ultrafine particle metal materials. 3. The adhesive layer has an elastic modulus of 100 after curing.
The resin-encapsulated semiconductor device according to claim 1, which is an adhesive having a Kgf / cm ² or less. 4. A step of stacking a metal material in the form of ultrafine particles on an electrode provided on the upper surface of a semiconductor chip to form a metal column for external connection, and a step of forming the metal column on the semiconductor chip. From the step of adhering the lower surface onto the substrate via an adhesive layer, and the step of sealing the semiconductor chip adhered onto the substrate via the adhesive layer with the upper surface of the metal pillar exposed. A method of manufacturing a resin-encapsulated semiconductor device, comprising: 5. The method according to claim 4, wherein in the step of encapsulating, the encapsulation resin is filled in the mold with the upper surface of the metal column being in contact with the mold. 1. A method for manufacturing a resin-sealed semiconductor device according to claim 1.