JPH0737943A - Probe device - Google Patents

Probe device

Info

Publication number
JPH0737943A
JPH0737943A JP5200023A JP20002393A JPH0737943A JP H0737943 A JPH0737943 A JP H0737943A JP 5200023 A JP5200023 A JP 5200023A JP 20002393 A JP20002393 A JP 20002393A JP H0737943 A JPH0737943 A JP H0737943A
Authority
JP
Japan
Prior art keywords
inspected
contact
electrode pad
wafer
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5200023A
Other languages
Japanese (ja)
Other versions
JP3103957B2 (en
Inventor
Kunio Sano
國夫 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Yamanashi Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Yamanashi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Yamanashi Ltd filed Critical Tokyo Electron Ltd
Priority to JP05200023A priority Critical patent/JP3103957B2/en
Priority to US08/276,847 priority patent/US5559446A/en
Priority to KR1019940017368A priority patent/KR100309889B1/en
Publication of JPH0737943A publication Critical patent/JPH0737943A/en
Priority to US08/655,485 priority patent/US5982183A/en
Application granted granted Critical
Publication of JP3103957B2 publication Critical patent/JP3103957B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To provide a prober, in which a conductive protrusion used as a contact in a probe card is adequately put in contact with an electrode pad in a chip. CONSTITUTION:A movable plate 4 facing to a wafer stage 2 and a link arm 43 are provided so that the movable plate 4 kept in parallel with the wafer (W) can be rotated around an axis in parallel with the wafer (W). A flexible multilayer interconnection board 31 having bumps (conductive protrusions) 32 put in a row is mounted on the rear face of the movable plate 4. Both ends of the wiring board 31 is fixed to a printed board on the upper side. In this constitution, the wiring board 31 is pushed downward by a buffer body 44 in a notch part 41 that passes through the movable plate 4. when the wafer (W) abuts on the bump 32 and moves upward, the bump 32 pushes the electrode pad and slides sideways through rotating force of the movable plate 4 as well as restoring force of the buffer body 44. Then, the bump 32 abrades a natural oxide film on a surface of the electrode pad.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はプローブ装置に関する。FIELD OF THE INVENTION The present invention relates to a probe device.

【0002】[0002]

【従来の技術】半導体デバイスの製造工程においては、
ウエハプロセスが終了してウエハ内にICチップが完成
した後、電極パターンのショート、オープンやICチッ
プの入出力特性などを調べるためにプローブテストと呼
ばれる電気的測定が行われ、半導体ウエハ(以下「ウエ
ハ」という。)の状態でICチップの良否が判別され
る。その後ウエハはICチップに分断され、良品のIC
チップについてパッケージングされてから例えば所定の
プローブテストを行って最終製品の良否が判定される。
2. Description of the Related Art In a semiconductor device manufacturing process,
After the wafer process is completed and an IC chip is completed in the wafer, an electrical measurement called a probe test is performed in order to check the short-circuit and open of the electrode pattern, the input / output characteristics of the IC chip, and the like. The quality of the IC chip is determined in the state of "wafer". After that, the wafer is divided into IC chips, and good ICs
After the chip is packaged, for example, a predetermined probe test is performed to determine the quality of the final product.

【0003】このプローブ装置においては、従来図4に
示すように例えばX、Y、Z、θ方向に移動可能なウエ
ハ載置台1の上方側に、ウエハW内のICチップの例え
ばアルミニウムよりなる電極パッド配列に対応して配列
され、斜め下方にのびる横針と呼ばれるプローブ針11
を備えたプローブカード12を配置し、ウエハ載置台1
を移動させてウエハW内のICチップの電極パッドとプ
ローブ針11とを位置合わせした後プローブ針11と電
極パッドとを接触させ、更にウエハ載置台1を所定量上
昇させてオーバドライブをかけ、これにより電極パッド
表面に形成されたアルミニウムの自然酸化膜をプローブ
針により突き破り、確実な電気的接触を確保している。
そして電極パッドをプローブ針11とポゴピン13など
を含むコンタクトリング14とを介してテストヘッド1
5に電気的に接触させ、例えばICの使用速度に対応す
る高周波を用いて電気的測定を行ってICチップの良否
を判定するようにしている。
In this probe device, as shown in FIG. 4, conventionally, an electrode made of, for example, aluminum of an IC chip in the wafer W is provided above the wafer mounting table 1 which is movable in, for example, the X, Y, Z, and θ directions. Probe needles 11 which are arranged corresponding to the pad arrangement and extend diagonally downward and are called lateral needles 11.
The wafer mounting table 1 is provided with a probe card 12 provided with
Is moved to align the electrode pad of the IC chip in the wafer W with the probe needle 11, and then the probe needle 11 and the electrode pad are brought into contact with each other, and the wafer mounting table 1 is raised by a predetermined amount to perform overdrive. As a result, the natural oxide film of aluminum formed on the surface of the electrode pad is pierced by the probe needle to ensure reliable electrical contact.
Then, the electrode head is connected to the test head 1 through the probe needle 11 and the contact ring 14 including the pogo pin 13 and the like.
5 is electrically contacted, and the quality of the IC chip is determined by performing electrical measurement using, for example, a high frequency corresponding to the operating speed of the IC.

【0004】ところでチップが増々微細化し、回路の集
積度が高くなってくると、電極パッドのサイズが微細化
しかつその間隔も狭くなり、プローブ針の針立てが困難
化し限界に近づきつつある。このため最近ではプローブ
針に代って18金やニッケルなどの金属よりなるバンプ
を接触子として用いることが検討されている。
By the way, as the chips become finer and the degree of circuit integration becomes higher, the size of the electrode pads becomes finer and the intervals between them become narrower, and it becomes difficult and difficult to set the needles of the probe needles. For this reason, recently, it has been considered to use a bump made of metal such as 18 gold or nickel as a contact instead of the probe needle.

【0005】[0005]

【発明が解決しようとする課題】一方ウエハ表面は大気
にさらされているためその表面に自然酸化膜が形成され
るが、電極パッドと接触子との確実な接触を得るために
は接触子がこの自然酸化膜を突き破ってパッドの金属表
面に接触することが必要である。そこで従来のプローブ
針である横針の場合には、プローブ針と電極パッドとが
接触した後オーバドライブをかけることによりプローブ
針が内方側に撓んで横ずれし、これによって自然酸化膜
を擦過して突き破っている。
On the other hand, since the surface of the wafer is exposed to the atmosphere, a natural oxide film is formed on the surface. However, in order to obtain reliable contact between the electrode pad and the contact, It is necessary to break through this native oxide and contact the metal surface of the pad. Therefore, in the case of a horizontal needle, which is a conventional probe needle, when the probe needle and the electrode pad come into contact with each other and overdrive is applied, the probe needle bends inward and laterally shifts, thereby scraping the natural oxide film. Breaking through.

【0006】しかしながら接触子としてバンプを用いた
場合には、オーバドライブをかけても横針のように撓ま
ないし、またバンプの先端を鋭利に形成することが難か
しいので、自然酸化膜を突き破って電極パッドの表面に
確実に接触させることが困難であるという問題がある。
However, when the bump is used as the contactor, it does not bend like a horizontal needle even when overdriving, and it is difficult to sharply form the tip of the bump, so that it breaks through the natural oxide film. There is a problem that it is difficult to make sure contact with the surface of the electrode pad.

【0007】本発明は、このような事情のもとになされ
たものであり、その目的は、プローブカード側の導電性
突起と被検査体の電極パッドとを確実に電気的に接触さ
せて精度の高い電気的測定を行うことのできるプローブ
装置を提供することにある。
The present invention has been made under these circumstances, and an object thereof is to ensure that the conductive protrusions on the probe card side and the electrode pads of the device under test are brought into electrical contact with each other with high accuracy. An object of the present invention is to provide a probe device capable of performing high electrical measurement.

【0008】[0008]

【課題を解決するための手段】請求項1の発明は、被検
査体載置台上に載置された被検査体の電極パッドにプロ
ーブカードの接触子を接触させ、この接触子を介してテ
スタにより被検査体の電気的測定を行うプローブ装置に
おいて、前記接触子を導電性突起により構成し、この導
電性突起を被検査面に沿って相対的に移動させるための
移動機構を設け、前記導電性突起が電極パッドに接触し
た後これらを互いに押圧した状態で前記移動機構により
被検査面に沿って相対的に移動させることを特徴とする
請求項2の発明は、被検査体載置台上に載置された被検
査体の電極パッドにプローブカードの接触子を接触さ
せ、この接触子を介してテスタにより被検査体の電気的
測定を行うプローブ装置において、プローブカードを、
可撓性の基板の一面側に接触子をなす導電性突起を配列
して構成し、前記プローブカ−ドと被検査体載置台とを
相対的に接近させるための駆動機構と、前記プローブカ
ードを、導電性突起の配列された面が被検査体の被検査
面と並行のまま、被検査面に並行な軸のまわりに回動さ
せるリンク機構と、前記プローブカードの他面側を押圧
するための緩衝手段と、を備え、被検査体の電極パッド
が導電性突起に接触した後、導電性突起を緩衝手段の復
元力に抗して相対的に押圧すると共に、リンク機構のリ
ンク作用によりプローブカードを被検査面にそって移動
させることを特徴とする。
According to a first aspect of the present invention, a contactor of a probe card is brought into contact with an electrode pad of an object to be inspected placed on an object to be inspected table, and the tester is contacted via the contactor. In the probe device for electrically measuring the object to be inspected by the above, the contactor is constituted by a conductive protrusion, and a moving mechanism for relatively moving the conductive protrusion along the surface to be inspected is provided. The invention according to claim 2, wherein after the sexual projections contact the electrode pads, they are relatively pressed along the surface to be inspected by the moving mechanism in a state where they are pressed against each other. In the probe device in which the contactor of the probe card is brought into contact with the electrode pad of the mounted object to be inspected, and the object to be inspected is electrically measured by the tester through the contactor, the probe card is
A conductive mechanism that forms a contact is arranged on one surface side of a flexible substrate, and a drive mechanism for relatively bringing the probe card and the object mounting base relatively close to each other and the probe card are provided. , For pressing the other surface side of the probe card, and a link mechanism for rotating the surface on which the conductive projections are arranged parallel to the surface to be inspected of the object to be inspected, around a shaft parallel to the surface to be inspected After the electrode pad of the DUT comes into contact with the conductive protrusion, the conductive protrusion is relatively pressed against the restoring force of the buffer means and the probe is provided by the link action of the link mechanism. The feature is that the card is moved along the surface to be inspected.

【0009】[0009]

【作用】被検査体載置台をプローブカードに対して相対
的に接近させて導電性突起と電極パッドとを接触させ、
次いで導電性突起を電極パッドに対して押圧した状態で
相対的に被検査体の被検査面に沿って動かす。この動作
は、請求項2の発明のようなリンク機構を設ければ、被
検査体と導電性突起とが接触した後これらが互に押圧さ
れながら横方向に位置ずれする動作となる。これにより
導電性突起が電極パッドの表面を擦過するため、電極パ
ッドの表面に形成された自然酸化膜を擦過して電極パッ
ドに確実に接触する。
[Function] The object mounting base is brought relatively close to the probe card to bring the conductive projection into contact with the electrode pad,
Next, the conductive protrusion is moved relative to the inspected surface of the inspected object while being pressed against the electrode pad. If the link mechanism according to the second aspect of the present invention is provided, this operation is an operation in which the inspected body and the conductive protrusions are laterally displaced while being pressed against each other after they come into contact with each other. As a result, the conductive protrusions rub the surface of the electrode pad, so that the natural oxide film formed on the surface of the electrode pad is rubbed to surely contact the electrode pad.

【0010】[0010]

【実施例】図1及び図2は、夫々本発明の実施例を示す
側面図及び要部を示す分解斜視図である。図中2はウエ
ハ載置台であり、このウエハ載置台2は、駆動機構21
によって例えば位置合せのためにX、Y、θ方向に微量
に駆動されると共に、検査領域と移載領域との間をZ方
向に駆動されるように構成される。このウエハ載置台2
には、ウエハWの受け渡し時に当該ウエハWを載置面か
ら浮上させるための昇降ピン(図示せず)や、高温/低
温試験を行う場合には温調手段などが内蔵されている。
1 and 2 are a side view showing an embodiment of the present invention and an exploded perspective view showing a main portion thereof, respectively. In the figure, 2 is a wafer mounting table, and the wafer mounting table 2 is a drive mechanism 21.
For example, a slight amount is driven in the X, Y, and θ directions for alignment, and is also driven in the Z direction between the inspection region and the transfer region. This wafer mounting table 2
Includes a lifting pin (not shown) for floating the wafer W from the mounting surface during delivery of the wafer W, and a temperature adjusting unit when performing a high temperature / low temperature test.

【0011】前記ウエハ載置台2の上方側には、これに
対向するようにプローブカード3が配設されている。こ
のプローブカード3は、フレキシブルな多層配線基板3
1例えばポリイミドによる絶縁膜と銅による配線パタ−
ンよりなる基板31と、この基板31の下面側にて、ウ
エハWの全てのチップの電極パッドに夫々一括して接触
するように当該全ての電極パッドに対応して配列された
導電性突起である例えば18金、白金、ロジウム、タン
グステンあるいはニッケル合金などからなるバンプ32
とを備えてなり、バンプ32は例えば図3(a)、
(b)に示すように下方に向いた逆円錐形状に構成され
ている。なおバンプ32の形状はこの例に限られるもの
ではなく、瘤型などであってもよい。
A probe card 3 is arranged above the wafer mounting table 2 so as to face the wafer mounting table 2. This probe card 3 is a flexible multilayer wiring board 3
1. For example, an insulating film made of polyimide and a wiring pattern made of copper
And a conductive protrusion arranged on the lower surface side of the substrate 31 so as to collectively contact the electrode pads of all the chips of the wafer W, respectively. A bump 32 made of, for example, 18 gold, platinum, rhodium, tungsten or nickel alloy
And the bumps 32 are, for example, as shown in FIG.
As shown in (b), it is formed in an inverted conical shape that faces downward. The shape of the bump 32 is not limited to this example, and may be a bump shape or the like.

【0012】前記プローブカード3の上方側には、可動
プレート4が配設されており、この可動プレート4は、
中央部に、バンプ32の配列領域を包有する大きさの角
形の切欠部41が透設されると共に、この切欠部41の
左右両側に、夫々前記基板41の前後幅に対応する長さ
の長穴42、42が形成されている。更に前記可動プレ
ート4の上方側には、下面側に補強プレート33が重ね
て設けられたプリント基板5が装置本体の外装部50に
固定して設けられており、このプリント基板5及び補強
プレート33における前記長穴42、42よりも若干左
右外側位置に、当該長穴42、42と同様な長穴(5
1、51)、(34、34)が形成されている。
A movable plate 4 is arranged above the probe card 3, and the movable plate 4 is
A rectangular notch 41 having a size enclosing the array region of the bumps 32 is provided at the center, and the left and right sides of the notch 41 have lengths corresponding to the front and rear widths of the substrate 41, respectively. Holes 42, 42 are formed. Further, a printed circuit board 5 having a reinforcing plate 33 stacked on the lower surface side is fixedly provided to the exterior part 50 of the apparatus main body above the movable plate 4, and the printed circuit board 5 and the reinforcing plate 33 are provided. At a position slightly outside the slots 42, 42 in the right and left of the slots 42, 42.
1, 51) and (34, 34) are formed.

【0013】そして前記プローブカード3は、バンプ3
2の配列されている領域が可動プレート4の切欠部41
に臨むように可動プレート4の下面側に固定されると共
に、フレキシブルな基板31の左右両端部は、夫々可動
プレート4の長穴42、42を通り更にプリント基板5
及び補強プレート33の長穴(51、51)、(34、
34)を通って外側に折り返されてプリント基板5の表
面に固定されている。
The probe card 3 has bumps 3
The area in which 2 are arranged is the cutout portion 41 of the movable plate 4.
Is fixed to the lower surface side of the movable plate 4 so as to face the movable plate 4, and the left and right end portions of the flexible substrate 31 pass through the elongated holes 42 of the movable plate 4, respectively, and further the printed circuit board 5
And the elongated holes (51, 51), (34,
34) and is folded back to the outside to be fixed to the surface of the printed circuit board 5.

【0014】前記多層配線基板31は、夫々バンプ32
に電気的に接続された導電路である配線層が多数積層さ
れると共に、多層配線層の上下両面及び配線層間には接
地電位の接地層が介在して構成され、これら配線層及び
接地層の外端側の接点(図示せず)がプリント基板5の
接点52に接続されている。前記プリント基板5の上方
側には、伸縮自在な導電性のピンよりなるいわゆるポゴ
ピン61が上下に突出した、中間接続体をなすコンタク
トリング62が配置されており、ポゴピン61の下端
は、プリント基板5の前記接点52にプリント配線を介
して電気的に接続されている電極53に接触する一方、
ポゴピン61の上端は、上方側のテストヘッド63の図
示しない電極に接触し、こうしてテストヘッド63はポ
ゴピン61プリント基板5及び多層配線基板31を介し
て接触子であるバンプ31に電気的に接続されている。
The multilayer wiring board 31 has bumps 32, respectively.
A large number of wiring layers that are electrically conductive paths electrically connected to each other are laminated, and a ground potential ground layer is formed between the upper and lower surfaces of the multilayer wiring layer and between the wiring layers. A contact (not shown) on the outer end side is connected to the contact 52 of the printed circuit board 5. On the upper side of the printed circuit board 5, a so-called pogo pin 61 composed of a stretchable conductive pin is vertically arranged, and a contact ring 62 which is an intermediate connector is arranged. The lower end of the pogo pin 61 is a printed circuit board. While contacting the electrode 53 electrically connected to the contact point 52 of 5 through the printed wiring,
The upper end of the pogo pin 61 contacts an electrode (not shown) of the upper test head 63, and thus the test head 63 is electrically connected to the bump 31 which is a contactor via the pogo pin 61 printed board 5 and the multilayer wiring board 31. ing.

【0015】前記補強板33の裏面側に設けられた取り
付け部54、54と可動プレート4の左右両端部との間
には、リンクアーム43を有するリンク機構が設けられ
ており、このリンクアーム43は、可動プレート4を水
平に維持したままウエハWの表面に並行な軸を中心と描
かれる、ウエハ載置台2側に膨らむ円弧軸跡に沿って移
動できるように、両端が夫々取り付け部54及び可動プ
レート4に軸支されている。
A link mechanism having a link arm 43 is provided between the mounting portions 54, 54 provided on the back surface side of the reinforcing plate 33 and the left and right ends of the movable plate 4, and the link arm 43 is provided. Both ends are respectively attached to the mounting portion 54 and the mounting portion 54, so that the movable plate 4 can be moved along an arcuate axis trace that is drawn around the axis parallel to the surface of the wafer W and bulges toward the wafer mounting table 2 side while keeping the movable plate 4 horizontal. It is pivotally supported by the movable plate 4.

【0016】そしてリンクアーム43は、プローブカー
ド3がウエハWと接触していないときに例えば図1に示
すように斜めの状態にあるように、図示しないストッパ
により図1中時計方向の回動が阻止されている。また前
記プローブカード3におけるバンプ32が配列されてい
る領域の上面には、フレキシブルな多層配線基板31を
介してバンプ32をウエハW側に押圧するための緩衝手
段、例えばプローブカード3とプリント基板5との間に
圧入された例えばエアバッグやゴム製マットなどの緩衝
体44が設けられている。
The link arm 43 is rotated clockwise in FIG. 1 by a stopper (not shown) so that the link arm 43 is in an oblique state as shown in FIG. 1 when the probe card 3 is not in contact with the wafer W, for example. It has been blocked. On the upper surface of the area where the bumps 32 are arranged in the probe card 3, buffer means for pressing the bumps 32 toward the wafer W via the flexible multilayer wiring board 31, for example, the probe card 3 and the printed circuit board 5. A cushioning member 44 such as an air bag or a rubber mat, which is press-fitted, is provided between and.

【0017】次に上述実施例の作用について述べる。先
ず図示しない搬送アームより被検査体例えばウエハW
を、ウエハ載置台2に内蔵された図示しない昇降ピンを
介してウエハ載置台2に受け渡す。次いでプローブカー
ド3とウエハWとの平面方向の位置合わせを行う。この
位置合わせは、例えばプローブカード3とウエハWとの
間に、ウエハWの表面とプローブカード3のバンプ32
の配列された面との画像を同時に取り込める光学系ユニ
ットを挿入し、オペレータが両画像を見ながらウエハ載
置台2のX、Y、θ方向の位置調整を行ったことにより
実行することができる。ただしこのような方法以外の方
法により位置合わせを行ってもよい。
Next, the operation of the above embodiment will be described. First, an object to be inspected, for example, a wafer W is transferred from a transfer arm (not shown).
Are transferred to the wafer mounting table 2 via lifting pins (not shown) built in the wafer mounting table 2. Then, the probe card 3 and the wafer W are aligned in the plane direction. This alignment is performed, for example, between the probe card 3 and the wafer W, and between the surface of the wafer W and the bump 32 of the probe card 3.
This can be performed by inserting an optical system unit capable of simultaneously capturing an image of the surface on which the wafers are arranged and adjusting the position of the wafer mounting table 2 in the X, Y, and θ directions while observing both images. However, the alignment may be performed by a method other than this method.

【0018】続いてウエハ載置台2を上昇させるとウエ
ハWの全てのチップの電極パッドが全てのバンプ32に
一括して当接するが、更にウエハ載置台2を上昇させる
と緩衝体44が押圧され、その復元力により、フレキシ
ブルな多層配線基板31を介してバンプ32がウエハW
上の電極パッドを押圧すると共に、可動プレート4はリ
ンク機構43により上昇しながら横方向に動くので、バ
ンプ32が電極パッドを擦りながら横にずれる。こうし
て先述したようにウエハW上の電極パッドはバンプ32
を通じてテストヘッド63に電気的に接続され、この状
態でテストヘッド63は所定の電源電圧や検査パルス信
号をウエハWのチップに与え、チップ側からの出力パル
ス信号を取り込んでチップの良否を判定する。
Subsequently, when the wafer mounting table 2 is raised, the electrode pads of all the chips of the wafer W collectively come into contact with all the bumps 32, but when the wafer mounting table 2 is further raised, the buffer 44 is pressed. , Due to the restoring force, the bumps 32 are formed on the wafer W through the flexible multilayer wiring substrate 31.
While pressing the upper electrode pad, the movable plate 4 moves laterally while rising by the link mechanism 43, so that the bumps 32 shift laterally while rubbing the electrode pad. Thus, as described above, the electrode pads on the wafer W are the bumps 32.
Is electrically connected to the test head 63 through this, and in this state, the test head 63 applies a predetermined power supply voltage and a test pulse signal to the chip of the wafer W, and takes in the output pulse signal from the chip side to judge the quality of the chip. .

【0019】このような実施例によれば、バンプ31が
電極パッドに接触した後電極パッドを押圧しながら横ず
れするため、電極パッドの表面に形成された自然酸化膜
を擦過して突き破り、確実に電極パッドの金属面(例え
ばアルミニウムの面)に接触させることができ、従って
良好な電気的接触を確保できるので精度の高い測定を行
うことができる。
According to such an embodiment, since the bump 31 comes into contact with the electrode pad and laterally shifts while pressing the electrode pad, the natural oxide film formed on the surface of the electrode pad is rubbed and pierced, so that the electrode pad is surely removed. The metal surface of the electrode pad (for example, the surface of aluminum) can be brought into contact with the electrode pad, and thus good electrical contact can be ensured, so that highly accurate measurement can be performed.

【0020】以上においてプローブカード3をウエハW
を押圧しながら横方向に動かす機構としては、例えば多
層配線基板31のバンプ32の裏面側に堅いプレートを
配置し、ウエハWとバンプ32とが当接した後リンクア
ーム43を別途設けた駆動機構により時計方向に回動さ
せるようにしてもよいし、あるいはウエハ載置台2側に
リンク機構を設けてもよい。またリンク機構を設けず
に、ウエハ載置台2とプローブカード3とを相対的に横
に移動させる機構を別途設けるか、あるいはウエハ載置
台2の駆動機構21を利用して、ウエハWとバンプ32
とを押圧した後これらを相対的に横ずれ例えばX、Y、
またはθ方向に移動させるようにしてもよい。
In the above, the probe card 3 is mounted on the wafer W.
As a mechanism for moving in a horizontal direction while pressing, a hard plate is arranged on the back side of the bumps 32 of the multilayer wiring board 31, and a drive mechanism in which a link arm 43 is separately provided after the wafer W and the bumps 32 come into contact with each other. Alternatively, the link mechanism may be provided on the wafer mounting table 2 side. Further, without providing the link mechanism, a mechanism for moving the wafer mounting table 2 and the probe card 3 relatively laterally is separately provided, or the drive mechanism 21 of the wafer mounting table 2 is used, and the wafer W and the bump 32 are provided.
After pressing and, these are relatively laterally displaced, for example X, Y,
Alternatively, it may be moved in the θ direction.

【0021】更にまたプローブカード3は、バンプ32
がウエハW上の電極パッドの全部に一括して接触するタ
イプのものに限らず、一部の電極パッドに接触する、い
わば部分的マルチタイプのものであってもよく、この場
合には、バンプ32群が順次電極パッド群に接触するよ
うにウエハ載置台を移動できる構成とすればよい。なお
本発明は、ウエハ載置台を水平に配置するものに限らず
垂直に配置したプローブ装置に対しても適用できる。
Furthermore, the probe card 3 has bumps 32.
Is not limited to a type in which all of the electrode pads on the wafer W are collectively contacted, but may be a so-called partial multi-type in which some electrode pads are contacted. In this case, bumps The wafer mounting table may be moved so that the 32 groups sequentially contact the electrode pad group. The present invention is not limited to the one in which the wafer mounting table is arranged horizontally, but can be applied to a probe device arranged vertically.

【0022】[0022]

【発明の効果】請求項1の発明によれば、プローブカー
ドの接触子である導電性突起が電極パッドに接触した後
これらが互に押圧された状態で被検査面に沿って移動す
るので、導電性突起が電極パッドの表面の自然酸化膜を
突き破って電極パッドと確実に接触し、このため精度の
高い測定を行うことができる。
According to the first aspect of the present invention, since the conductive protrusions, which are the contactors of the probe card, contact the electrode pads and then move along the surface to be inspected while they are pressed against each other, The conductive protrusion pierces the natural oxide film on the surface of the electrode pad and surely contacts the electrode pad, which allows highly accurate measurement.

【0023】請求項2の発明によれば、プローブカード
がリンク機構により被検査面に沿って移動しながら被検
査面と反対側に動く一方、緩衝手段により被検査体側に
押圧されるため、導電性突起が電極パッドに対して無理
なく横ずれでき、従って導電性突起の摩耗が抑えられる
などの効果がある。
According to the second aspect of the present invention, the probe card is moved along the surface to be inspected by the link mechanism while moving toward the side opposite to the surface to be inspected, while the buffer means presses it toward the object to be inspected. The conductive protrusion can be laterally displaced with respect to the electrode pad without any difficulty, and therefore, the abrasion of the conductive protrusion can be suppressed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す側面図である。FIG. 1 is a side view showing an embodiment of the present invention.

【図2】本発明の実施例の要部を示す分解斜視図であ
る。
FIG. 2 is an exploded perspective view showing a main part of the embodiment of the present invention.

【図3】バンプ(導電性突起)を示す側面図である。FIG. 3 is a side view showing bumps (conductive protrusions).

【図4】従来のプローブ装置を示す縦断面図である。FIG. 4 is a vertical cross-sectional view showing a conventional probe device.

【符号の説明】[Explanation of symbols]

2 ウエハ載置台 3 プローブカード 31 多層配線基板 32 バンプ 4 可動プレート 43 リンクアーム 44 緩衝体 5 プリント基板 62 コンタクトリング 63 テストヘッド W 半導体ウエハ 2 Wafer mounting table 3 Probe card 31 Multi-layer wiring board 32 Bump 4 Movable plate 43 Link arm 44 Buffer 5 Printed board 62 Contact ring 63 Test head 63 Semiconductor wafer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 被検査体載置台上に載置された被検査体
の電極パッドにプローブカードの接触子を接触させ、こ
の接触子を介してテスタにより被検査体の電気的測定を
行うプローブ装置において、 前記接触子を導電性突起により構成し、この導電性突起
を被検査面に沿って相対的に移動させるための移動機構
を設け、前記導電性突起が電極パッドに接触した後これ
らを互いに押圧した状態で前記移動機構により被検査面
に沿って相対的に移動させることを特徴とするプローブ
装置。
1. A probe in which a contact of a probe card is brought into contact with an electrode pad of an object to be inspected mounted on an object to be inspected table, and a tester electrically measures the object to be inspected through the contact. In the device, the contactor is constituted by a conductive protrusion, and a moving mechanism for relatively moving the conductive protrusion along a surface to be inspected is provided, and after the conductive protrusion comes into contact with the electrode pad, these are arranged. A probe device, wherein the probe device is relatively moved along the surface to be inspected by the moving mechanism while being pressed against each other.
【請求項2】 被検査体載置台上に載置された被検査体
の電極パッドにプローブカードの接触子を接触させ、こ
の接触子を介してテスタにより被検査体の電気的測定を
行うプローブ装置において、 プローブカードを、可撓性の基板の一面側に接触子をな
す導電性突起を配列して構成し、 前記プローブカ−ドと被検査体載置台とを相対的に接近
させるための駆動機構と、 前記プローブカードを、導電性突起の配列された面が被
検査体の被検査面と並行のまま、被検査面に並行な軸の
まわりに回動させるリンク機構と、 前記プローブカードの他面側を押圧するための緩衝手段
と、 を備え、 被検査体の電極パッドが導電性突起に接触した後、導電
性突起を緩衝手段の復元力に抗して相対的に押圧すると
共に、リンク機構のリンク作用によりプローブカードを
被検査面にそって移動させることを特徴とするプローブ
装置。
2. A probe in which a contact of a probe card is brought into contact with an electrode pad of an object to be inspected placed on an object to be inspected table, and a tester electrically measures the object to be inspected through the contact. In the apparatus, a probe card is configured by arranging conductive protrusions forming contacts on one surface side of a flexible substrate, and driving for relatively bringing the probe card and the object mounting base relatively close to each other. And a link mechanism for rotating the probe card around an axis parallel to the surface to be inspected while the surface on which the conductive protrusions are arranged is parallel to the surface to be inspected of the object to be inspected. A buffer means for pressing the other surface side, and after the electrode pad of the device under test contacts the conductive protrusion, the conductive protrusion is relatively pressed against the restoring force of the buffer means, and Plow by the link action of the link mechanism A probe device for moving a bucard along the surface to be inspected.
JP05200023A 1993-07-19 1993-07-19 Probe device Expired - Fee Related JP3103957B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05200023A JP3103957B2 (en) 1993-07-19 1993-07-19 Probe device
US08/276,847 US5559446A (en) 1993-07-19 1994-07-18 Probing method and device
KR1019940017368A KR100309889B1 (en) 1993-07-19 1994-07-19 Probe Device
US08/655,485 US5982183A (en) 1993-07-19 1996-05-30 Probing method and device with contact film wiper feature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05200023A JP3103957B2 (en) 1993-07-19 1993-07-19 Probe device

Publications (2)

Publication Number Publication Date
JPH0737943A true JPH0737943A (en) 1995-02-07
JP3103957B2 JP3103957B2 (en) 2000-10-30

Family

ID=16417532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05200023A Expired - Fee Related JP3103957B2 (en) 1993-07-19 1993-07-19 Probe device

Country Status (1)

Country Link
JP (1) JP3103957B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005029584A1 (en) * 2003-09-22 2005-03-31 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
US7386816B2 (en) 1998-09-15 2008-06-10 Microconnect Llc Method for manufacturing an electronic device having an electronically determined physical test member

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7386816B2 (en) 1998-09-15 2008-06-10 Microconnect Llc Method for manufacturing an electronic device having an electronically determined physical test member
US8056031B2 (en) 1998-09-15 2011-11-08 Microconnect Corp. Methods for manufacturing an electronic device using an electronically determined test member
US8756537B2 (en) 1998-09-15 2014-06-17 Microconnect Corp. Methods for making contact device for making connection to an electronic circuit device and methods using the same
WO2005029584A1 (en) * 2003-09-22 2005-03-31 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

Also Published As

Publication number Publication date
JP3103957B2 (en) 2000-10-30

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