JP2005064313A - Probe card, probe equipment and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a probe card, a probe device and a semiconductor device for suppressing the deterioration of the strength of a connecting means, and for reducing the increase of a price even when the number of pins is increased. <P>SOLUTION: This probe device is configured to execute a probe test to a semiconductor wafer W, and provided with a probe card substrate 5, a recess arranged on the side face of the substrate 5, a conductive metallic sphere arranged in the recessed part, a mounting member 4 on which the substrate 5 is mounted, and to which the substrate 5 is connected through the conductive metallic sphere, a performance board 2 electrically connected to the member 4, a test head 1 electrically connected to this and a wafer holding mechanism for holding a semiconductor wafer. The mounting member 4 is formed with a hollow 4a, and the probe card substrate 5 is fit and mounted in the hollow, and an electrode pad is arranged on the internal surface of the hollow, and the electrode pad is brought into contact with the conductive metallic sphere, and the metallic sphere is connected through a conductive spring to the internal surface of the recess. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a probe card, a probe device, and a method for manufacturing a semiconductor device, and more particularly, to a probe card, a probe device, and a semiconductor device that can suppress a decrease in strength of connection means even if the number of pins increases and reduce a price increase. It relates to a manufacturing method.

  When a large number of IC chips are formed on a semiconductor wafer in a semiconductor process step, the electrical characteristics of each IC chip are inspected as they are, and defective products are screened. In general, a probe device is used for this inspection. In this probe device, the probe needle of the probe card is brought into contact with the electrode pad of each IC chip on the semiconductor wafer, and a predetermined voltage is applied from the probe needle to perform electrical inspection such as continuity test of each IC chip. This is a device for testing whether or not each IC chip has electrical characteristics through a tester.

FIG. 6 is a cross-sectional view showing a connection relationship from a test head to a probe card in a conventional probe device (Japanese Patent Laid-Open No. 6-294818).
The test head 101 is connected to the probe card 106 via the performance board 103. The probe card 106 has a probe needle 107, and the performance board 103 has a spring-type shaft 104 and a probe card receiving substrate 105.

  The performance board 103 holds a wiring cable mechanism, and is configured such that the probe card 106 is directly attached thereto. In this state, the signal transmission line is such that the output from the LSI tester passes from the test head 101 via the pogo pin 102, the signal received by the performance board 103 passes through the performance board wiring 111, and the pogo pin 102 on the performance board 103 passes through the pogo pin 102. The information is transmitted to the probe card 106 via.

  As for the method of fixing the probe card 106 on the prober side, the position accuracy is compensated by providing the probe pin 106 guide pins 108 on the prober side cradle 109, and it is necessary to directly fix the probe card 106 to the prober side. The fixing can be performed by the weight of the test head 101 and the clamp mechanism of the test head.

JP-A-6-294818 (2-3 pages, FIG. 1)

  As described above, the conventional probe device uses the spring loaded pogo pin 102 for electrical connection between the probe card 106 and the test head 101, and this pogo pin is in contact with the back surface of the probe card. Since recent IC chips such as IC chips for LCD drivers have a tendency to increase the number of pins, it is necessary to advance miniaturization of pogo pins which are connection means for electrically connecting the electrode pads of the IC chip and the test head. However, if the pogo pins are made finer, the strength of the pogo pins will be insufficient and the price will increase.

  The present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to provide a probe card, a probe device, and a semiconductor capable of suppressing a decrease in the strength of connection means and reducing an increase in price even if the number of pins increases. It is to provide a method for manufacturing an apparatus.

In order to solve the above problems, a probe card according to the present invention is a probe card for performing a probe test on a semiconductor wafer,
A recess provided on the side surface of the probe card substrate;
A connection terminal disposed in the recess,
Comprising
The connection terminal is for connecting the probe card substrate to a test head.

  According to the probe card, a concave portion is provided on the side surface of the probe card substrate, a connection terminal is disposed in the concave portion, and the probe card substrate is connected to the test head by the connection terminal. That is, the connection terminals arranged in the recesses are used as connection means for connecting the probe card and the test head without using pogo pins as in the prior art. Therefore, the strength of the connecting means can be sufficiently ensured even if the number of pins of the IC chip increases. In addition, since the connection means is constituted by the concave portion on the side surface of the probe card substrate and the connection terminal arranged in the concave portion, it is possible to reduce the price increase even if the connection means is miniaturized.

In the probe card according to the present invention, an elastic body may be connected to the inner surface of the connection terminal and the recess. The elastic body is, for example, a conductive spring.
In the probe card according to the present invention, it is preferable that the connection terminal has a spherical shape or an ellipsoidal shape.
The probe card according to the present invention may further include a ring that is attached to a side surface of the probe card substrate and is disposed so as to cover the side surface of the probe card substrate and that holds the connection terminal. .

A probe apparatus according to the present invention is a probe apparatus that performs a probe test on a semiconductor wafer,
A probe card substrate;
A recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The mounting member to which the probe card substrate is mounted, and the probe card substrate is connected via the connection terminal;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
It comprises.

  According to the probe device, the concave portion is provided on the side surface of the probe card substrate, the connection terminal is disposed in the concave portion, and the connection terminal is connected to the mounting member to serve as the connection means to the test head. That is, the probe card substrate and the test head are connected using the connection means without using the pogo pins as in the prior art. Therefore, even if the number of pins of the IC chip increases, the strength of the connecting means can be sufficiently ensured. In addition, since the connection means is constituted by the concave portion on the side surface of the probe card substrate and the connection terminal arranged in the concave portion, it is possible to reduce the price increase even if the connection means is miniaturized.

The probe device according to the present invention may further include a recess provided in the mounting member, and the probe card board may be fitted and mounted in the recess.
The probe device according to the present invention may further include an electrode pad disposed on the inner surface of the recess, and the electrode pad may be in contact with the connection terminal.

  The probe device according to the present invention further includes an elastic body connected to the connection terminal and the inner surface of the recess, and the probe card substrate is fixed to the mounting member by a repulsive force of the elastic body. Is also possible.

A probe apparatus according to the present invention is a probe apparatus that performs a probe test on a semiconductor wafer,
A probe card substrate;
A mounting member to which the probe card substrate is mounted;
A recess provided in the mounting member;
A connection terminal disposed in the recess and connected to the probe card substrate;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
It comprises.

  According to the probe device, the mounting member is provided with a recess, the connection terminal is disposed in the recess, and the connection terminal is used as a connection means to the test head. That is, the probe card substrate and the test head are connected using the connection means without using the pogo pins as in the prior art. Therefore, even if the number of pins of the IC chip increases, the strength of the connecting means can be sufficiently ensured. Further, since the connecting means is constituted by the concave portion on the inner surface of the mounting member and the connection terminal arranged in the concave portion, it is possible to reduce the price increase even if the connecting means is miniaturized.

The probe device according to the present invention may further include a recess provided in the mounting member, and the probe card board may be fitted and mounted in the recess.
The probe device according to the present invention may further include an electrode pad disposed on a side surface of the probe card substrate, and the electrode pad may be in contact with the connection terminal.

A method of manufacturing a semiconductor device according to the present invention includes a step of manufacturing an IC chip before being divided into semiconductor wafers,
Performing a probe test using a probe card on the semiconductor wafer;
A method for manufacturing a semiconductor device comprising:
The probe card has a recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The connection terminal is for connecting the probe card substrate to a test head.

  According to the manufacturing method of the semiconductor device, a probe test is performed using a probe card in which a concave portion is provided on a side surface of the probe card substrate, a connection terminal is disposed in the concave portion, and the connection terminal is used as a connection means to the test head. Is going. For this reason, even if the number of pins of the IC chip increases, the strength of the connecting means can be sufficiently ensured. In addition, since the probe test is performed using the probe card that constitutes the connection means by the concave portion on the side surface of the probe card substrate and the connection terminal arranged in the concave portion, the price increases even if the connection means is miniaturized. It can be reduced. Therefore, the manufacturing cost of the semiconductor device can be reduced.

A method of manufacturing a semiconductor device according to the present invention includes a step of manufacturing an IC chip before being divided into semiconductor wafers,
Performing a probe test on the semiconductor wafer using a probe device;
A method for manufacturing a semiconductor device comprising:
The probe device includes a probe card substrate,
A recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The mounting member to which the probe card substrate is mounted, and the probe card substrate is connected via the connection terminal;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
It comprises.

A method of manufacturing a semiconductor device according to the present invention includes a step of manufacturing an IC chip before being divided into semiconductor wafers,
Performing a probe test on the semiconductor wafer using a probe device;
A method for manufacturing a semiconductor device comprising:
The probe device includes a probe card substrate,
A mounting member to which the probe card substrate is mounted;
A recess provided in the mounting member;
A connection terminal disposed in the recess and connected to the probe card substrate;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
It comprises.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
FIG. 1 is a configuration diagram schematically showing a probe apparatus according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view showing an electrical connection portion between the probe card and its mounting member in the probe apparatus shown in FIG.

As shown in FIG. 1, the probe apparatus includes a test head 1, a performance board 2 sequentially disposed in the apparatus main body (not shown) below the test head 1, and a probe card connected to the performance board 2. 5 is provided.
Inside the test head 1 is a pin electronics 6 comprising a sample power source for applying a voltage to an IC chip on a semiconductor wafer W as an object to be inspected and an input unit for taking the output from the IC chip into the measurement unit. Built in. The pin electronics 6 is electrically connected to a plurality of electronic component circuits 7 mounted on the performance board 2. These electronic component circuits 7 are configured as various measurement circuits including, for example, a matrix relay, a driver circuit, and the like. A plurality of IC chips before being divided are produced on the semiconductor wafer W.

  A mounting member 4 for mounting the probe card 5 is provided below the performance board 2. A depression 4 a for fitting the probe card 5 is provided below the mounting member 4. A spacer 13 made of a cushion material such as rubber is disposed at the bottom of the recess 4a. A probe card 5 is fitted in the recess 4a. The spacer 13 is positioned so as to correspond to the upper surface of the probe card 5, whereby a large area of the upper surface of the probe card 5 can be pressed downward by the spacer 13. The mounting member 4 is for electrically connecting the probe card 5 to the performance board 2.

  As shown in FIG. 2, a plurality of recesses 5a are provided on the side surface of the probe card substrate, and the inner surface of the recess 5a has a curved surface. A conductive metal ball 3 as a connection terminal is disposed in the recess 5 a, and the curved surface of the inner surface of the recess 5 a is a surface that substantially corresponds to the outer surface of the conductive metal ball 3. The conductive metal ball 3 is connected to the inner surface of the recess 5 a by a conductive spring 10 and is electrically connected to the probe card 5. A resin ring 12 is attached to the probe card substrate so as to cover the periphery of the side surface. The resin ring 12 is a ring that holds the conductive metal sphere 3, and has a hole for exposing a part of the conductive metal sphere 3. A part of the conductive metal ball 3 protrudes from the hole of the resin ring 12 and is exposed by the force of the conductive spring 10 repelling between the inner surface of the recess 5 a and the conductive metal ball 3. .

  The conductive metal sphere 3 can be made of various materials. For example, a surface of a stainless steel sphere plated with gold may be used. The conductive spring 10 can be made of various materials. For example, a stainless steel spring whose surface is gold-plated may be used.

  A plurality of electrode pads 15 are provided on the inner side surface of the recess 4 a of the mounting member 4, and the electrode pads 15 are arranged at positions facing the recesses 5 a of the probe card 5. That is, as shown in FIG. 2, when the probe card 5 is fitted into the recess 4 a of the mounting member 4, the exposed conductive metal ball 3 protruding from the hole of the resin ring 12 comes into contact with the electrode pad 15. ing. Accordingly, the probe card 5 is electrically connected to the connection means 8 in the performance board 2 via the conductive spring 10, the conductive metal ball 3, the electrode pad 15, the wiring 11 in the mounting member 4, and the like. The connection means 8 is configured to be connected to the electronic component circuit 7. Therefore, the test head 1 is configured to be electrically connected to the probe card 5 via the performance board 2 and the mounting member 4.

  The probe card 5 shown in FIG. 1 is capable of simultaneously measuring a plurality of IC chips on the semiconductor wafer W. On the lower surface side of the probe card, a fixing ring (not shown) made of a mold resin for fixing the probe needle is arranged at the center. Further, a plurality of probe needles 14 are fixed along the periphery of the fixing ring on the lower surface side of the probe card, and the fixed base ends thereof are printed wiring (not shown) and jumper wiring (not shown). The conductive metal ball 3 is connected via a conductive spring 10.

  Further, the arm portion of the probe needle 14 extends downward from the center portion of the probe card. The arm portion of each probe needle 14 is bent into a substantially L shape so that the tip thereof is substantially perpendicular to the probe card. The tip of this arm part has a stylus part that contacts the electrode pad of the IC chip of the wafer W. The intermediate joint portion which is a part of the arm portion of each probe needle 14 is fixed and held by the resin of the fixing ring, and each probe needle 14 is firmly positioned and held.

  An alignment mechanism for aligning the semiconductor wafer W with respect to the probe card 5 will be described. A substantially circular stage 27 is provided below the probe card 5, and the semiconductor wafer W is horizontally held by a wafer chuck 28 disposed on the upper surface of the stage 27. Inside the wafer chuck 28, a heating device 29 and a cooling medium circulation path 30 are provided as a temperature adjustment mechanism, and the semiconductor wafer W can be heated to, for example, 150 ° C. by the heating apparatus 29 as necessary during inspection. The semiconductor wafer W can be cooled to, for example, −10 ° C. by the cooling medium flowing through 30.

  The stage 27 has a drive mechanism (not shown) for driving the wafer chuck 28 in the horizontal direction, the vertical direction, and the θ direction, and the stage 27 is moved to the rails 31 and 32 by the drive of the drive mechanism when the semiconductor wafer W is aligned. The wafer chuck 28 is moved in the X and Y directions and the wafer chuck 28 is rotated in the θ direction, and further moved up and down. Further, a target plate 33 is attached to the wafer chuck 28, and the target plate 33 and a predetermined IC chip are detected by the optical imaging devices 34 and 35 and the electrostatic capacity sensor 36 disposed above the target plate 33. Based on the detection signal, the positions of the probe card 5 and the IC chip on the semiconductor wafer W are calculated. Based on the calculation result, the drive mechanism of the stage 27 is driven and controlled so that the IC chip to be inspected on the semiconductor wafer W is aligned with the probe card 5.

  Next, the operation will be described. For example, when the electrical inspection of the semiconductor wafer W is performed at a temperature of 150 ° C., the heating device 29 is operated to heat the semiconductor wafer W, for example, set to a temperature of 150 ° C., and the temperature is maintained. Next, the stage 27 is driven based on detection data obtained from the target plate 33, the optical imaging devices 34 and 35, the capacitance sensor 36, and the like, and the semiconductor wafer W is aligned with the probe card 5.

  After the alignment is completed, the wafer chuck 28 is raised to bring the probe tip of the probe needle 14 into contact with each electrode pad of the IC chip on the semiconductor wafer W, and the wafer chuck 28 is overdriven by a predetermined amount to probe probe 14 and the electrode pad. To a state where conduction is possible. When the wafer chuck 28 is raised and overdriven, a large area of the upper surface of the probe card is pressed by the spacer 13 at the bottom of the recess 4a of the mounting member 4.

  When a predetermined electrical signal is transmitted from the test head 1 in this conductive state and an electrical signal is input to the IC chip via the performance board 2, the mounting member 4, the probe needle 14 and the electrode pad, the input signal is based on the input signal. An output signal is taken into the pin electronics 6 from the IC chip via the mounting member 4 and the electronic component circuit 7 of the performance board 2, and the electrical inspection of the IC chip is performed.

  According to the first embodiment, the conductive metal ball 3 is embedded in the side surface of the probe card 5, and the conductive metal ball 3 is connected to the electrode pad 15 in the recess 4 a of the mounting member 4 to connect to the test head 1. It is said. That is, the probe card 5 and the test head 1 are connected by connecting the conductive metal ball 3 and the electrode pad 15 as shown in FIG. Therefore, even if the number of pins of the IC chip increases, the strength of the connection means between the conductive metal sphere 3 and the electrode pad 15 can be sufficiently ensured. Further, since the connecting means is constituted by the concave portion 5a on the side surface of the probe card, the conductive metal sphere 3 arranged in the concave portion, and the electrode pad 15 in contact with the conductive metal ball 3, the increase in price is reduced even if the connecting means is miniaturized. Is possible.

  In the present embodiment, the mounting member 4 is provided with a recess 4a, and the probe card 5 is fitted into the recess 4a. Since the conductive metal sphere 3 is disposed in the concave portion 5a on the side surface of the probe card 5 and the conductive metal sphere 3 and the inner surface of the concave portion 5a are connected by the conductive spring 10, the probe card 5 is fitted in the recess 4a. When it is inserted, the probe card 5 can be fixed to the recess 4 a by the repulsive force of the conductive spring 10. Therefore, it is very easy to mount the probe card 5 on the mounting member 4.

  In the first embodiment, the resin ring 12 is used. However, it is not limited to the resin ring, and other materials can be used. For example, a ring made of urethane or hard rubber is used. It is also possible to use it.

(Embodiment 2)
FIG. 3 is a cross-sectional view showing an electrical connection portion between the probe card and its mounting member in the probe device according to the second embodiment of the present invention. The same parts as those in FIG. Only explained. Moreover, since the whole structure of a probe apparatus is the same as that of Embodiment 1, description is abbreviate | omitted.

As shown in FIG. 3, a conductive metal ellipsoid (having an egg shape made of conductive metal) 16 as a connection terminal is disposed in the recess 5a, and the curved surface on the inner surface of the recess 5a is a conductive metal. The surface substantially corresponds to the outer surface of the ellipsoid 16. The conductive ellipsoid 16 is connected to the inner surface of the recess 5 a by the conductive spring 10 and is electrically connected to the probe card 5.
In the second embodiment, the same effect as in the first embodiment can be obtained.

(Embodiment 3)
4 is a cross-sectional view showing an electrical connection portion between a probe card and its mounting member in a probe apparatus according to Embodiment 3 of the present invention. The same parts as those in FIG. Only explained. Moreover, since the whole structure of a probe apparatus is the same as that of Embodiment 1, description is abbreviate | omitted.

  As shown in FIG. 4, a plurality of recesses 5a are provided on the inner surface of the recess 4a of the mounting member 4, and the inner surface of the recess 5a has a curved surface. A conductive metal ball 3 as a connection terminal is disposed in the recess 5 a, and the curved surface of the inner surface of the recess 5 a is a surface that substantially corresponds to the outer surface of the conductive metal ball 3. The conductive metal sphere 3 is connected to the inner surface of the recess 5a by a conductive spring 10 and is electrically connected to the wiring 11 of the mounting member. A resin ring 12 is attached so as to cover the periphery of the inner surface of the recess 4a. The resin ring 12 is a ring that holds the conductive metal sphere 3, and has a hole for exposing a part of the conductive metal sphere 3. A part of the conductive metal ball 3 protrudes from the hole of the resin ring 12 and is exposed by the force of the conductive spring 10 repelling between the inner surface of the recess 5 a and the conductive metal ball 3. .

A plurality of electrode pads 15 are provided on the side surface of the probe card 5, and the electrode pads 15 are arranged at positions facing the concave portions 5a on the inner side surface of the recess 4a. That is, as shown in FIG. 4, when the probe card 5 is fitted into the recess 4 a of the mounting member 4, the exposed conductive metal ball 3 protruding from the hole of the resin ring 12 comes into contact with the electrode pad 15. ing. Accordingly, the probe card 5 is electrically connected to the connection means 8 in the performance board 2 via the electrode pad 15, the conductive metal ball 3, the conductive spring 10, the wiring 11 in the mounting member 4, and the like. The connection means 8 is configured to be connected to the electronic component circuit 7.
In the third embodiment, the same effect as in the first embodiment can be obtained.

(Embodiment 4)
FIG. 5 is a cross-sectional view showing an electrical connection portion between a probe card and its mounting member in a probe device according to Embodiment 4 of the present invention. The same parts as those in FIG. Only explained. Moreover, since the whole structure of a probe apparatus is the same as that of Embodiment 1, description is abbreviate | omitted.

  As shown in FIG. 5, a conductive metal ellipsoid (having an egg shape made of conductive metal) 16 as a connection terminal is disposed in the recess 5a, and the curved surface on the inner surface of the recess 5a is a conductive metal. The surface substantially corresponds to the outer surface of the ellipsoid 16. The conductive ellipsoid 16 is connected to the inner surface of the recess 5 a by the conductive spring 10 and is electrically connected to the wiring 11 in the mounting member 4.

In the fourth embodiment, the same effect as in the third embodiment can be obtained.
The present invention is not limited to the above embodiment, and can be implemented with various modifications. For example, the conductive metal sphere 3 does not have to be a true sphere, but may be a shape close to a sphere. In addition, the conductive metal ellipsoid 16 does not have to be an accurate ellipsoid shape, but may be any shape as long as it is close to an ellipsoid.

BRIEF DESCRIPTION OF THE DRAWINGS The block diagram which shows schematically the probe apparatus by Embodiment 1 of this invention. Sectional drawing which shows the probe card by Embodiment 1, and its mounting member. Sectional drawing which shows the probe card by Embodiment 2, and its mounting member. Sectional drawing which shows the probe card by Embodiment 3, and its mounting member. Sectional drawing which shows the probe card by Embodiment 4, and its mounting member. Sectional drawing which shows a part of conventional probe apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Test head, 2 ... Performance board, 3 ... Conductive metal ball, 4 ... Mounting member, 4a ... Depression, 5 ... Probe card, 5a ... Recessed part, 6 ... Pin electronics, 7 ... Electronic component circuit, 8 ... Connection means DESCRIPTION OF SYMBOLS 10 ... Conductive spring, 11 ... Wiring, 12 ... Resin ring, 13 ... Spacer, 14 ... Probe needle, 15 ... Electrode pad, 16 ... Conductive metal ellipsoid, 27 ... Stage, 28 ... Wafer chuck, 29 ... Heating device, 30 ... circulation path of cooling medium, 31,32 ... rail, 33 ... target plate, 34,35 ... optical imaging device, 36 ... capacitance sensor, W ... semiconductor wafer, 101 ... test head, 102 ... Pogo pin, 103 ... Performance board, 104 ... Spring-type shaft, 105 ... Probe card receiving substrate, 106 ... Probe card, 107 ... Probe needle, 108 Guide pins, 109 ... Prober side cradle, 111 ... wire

Claims (14)

A probe card for performing a probe test on a semiconductor wafer,
A recess provided on the side surface of the probe card substrate;
A connection terminal disposed in the recess,
Comprising
The connection terminal is a probe card for connecting the probe card substrate to a test head. The probe card according to claim 1, wherein an elastic body is connected to the inner surface of the connection terminal and the recess. The probe card according to claim 1, wherein the connection terminal has a spherical shape or an ellipsoidal shape. 4. The probe card according to claim 1, further comprising a ring that is attached to a side surface of the probe card substrate and is disposed so as to cover the side surface of the probe card substrate, and holds the connection terminal. 5. A probe apparatus for performing a probe test on a semiconductor wafer,
A probe card substrate;
A recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The mounting member to which the probe card substrate is mounted, and the probe card substrate is connected via the connection terminal;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
A probe apparatus comprising: The probe apparatus according to claim 5, further comprising a recess provided in the mounting member, wherein the probe card substrate is fitted and mounted in the recess. The probe device according to claim 6, further comprising an electrode pad disposed on an inner surface of the recess, wherein the electrode pad is in contact with the connection terminal. 8. The probe device according to claim 6, further comprising an elastic body connected to the connection terminal and an inner surface of the recess, wherein the probe card board is fixed to the mounting member by a repulsive force of the elastic body. A probe apparatus for performing a probe test on a semiconductor wafer,
A probe card substrate;
A mounting member to which the probe card substrate is mounted;
A recess provided in the mounting member;
A connection terminal disposed in the recess and connected to the probe card substrate;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
A probe apparatus comprising: The probe device according to claim 9, further comprising a recess provided in the mounting member, wherein the probe card substrate is fitted and mounted in the recess. The probe device according to claim 10, further comprising an electrode pad disposed on a side surface of the probe card substrate, wherein the electrode pad is in contact with the connection terminal. A step of producing an IC chip before being divided into semiconductor wafers;
Performing a probe test using a probe card on the semiconductor wafer;
A method for manufacturing a semiconductor device comprising:
The probe card has a recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The method of manufacturing a semiconductor device, wherein the connection terminal is for connecting the probe card substrate to a test head. A step of producing an IC chip before being divided into semiconductor wafers;
Performing a probe test on the semiconductor wafer using a probe device;
A method for manufacturing a semiconductor device comprising:
The probe device includes a probe card substrate,
A recess provided on a side surface of the probe card substrate;
A connection terminal disposed in the recess,
The mounting member to which the probe card substrate is mounted, and the probe card substrate is connected via the connection terminal;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
A method for manufacturing a semiconductor device comprising: A step of producing an IC chip before being divided into semiconductor wafers;
Performing a probe test on the semiconductor wafer using a probe device;
A method for manufacturing a semiconductor device comprising:
The probe device includes a probe card substrate,
A mounting member to which the probe card substrate is mounted;
A recess provided in the mounting member;
A connection terminal disposed in the recess and connected to the probe card substrate;
A performance board electrically connected to the mounting member;
A test head electrically connected to the performance board;
A wafer holding mechanism for holding the semiconductor wafer;
A method for manufacturing a semiconductor device comprising:

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