JPH073707B2 - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPH073707B2
JPH073707B2 JP27947389A JP27947389A JPH073707B2 JP H073707 B2 JPH073707 B2 JP H073707B2 JP 27947389 A JP27947389 A JP 27947389A JP 27947389 A JP27947389 A JP 27947389A JP H073707 B2 JPH073707 B2 JP H073707B2
Authority
JP
Japan
Prior art keywords
magneto
recording medium
film
optical recording
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27947389A
Other languages
Japanese (ja)
Other versions
JPH03141058A (en
Inventor
好夫 俵
勝志 徳永
忠雄 野村
佳昌 清水
芳宏 久保田
周 樫田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP27947389A priority Critical patent/JPH073707B2/en
Priority to EP90120313A priority patent/EP0427982B1/en
Priority to DE69016171T priority patent/DE69016171T2/en
Priority to US07/601,659 priority patent/US5118573A/en
Publication of JPH03141058A publication Critical patent/JPH03141058A/en
Publication of JPH073707B2 publication Critical patent/JPH073707B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は光磁気記録媒体、特には化学的安定性にすぐれ
ており、カー回転角が大きく、光透過性がすぐれていて
C/Nもよく、記録密度の向上をはかることができる光磁
気記録媒体に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention provides a magneto-optical recording medium, particularly excellent in chemical stability, a large Kerr rotation angle, and excellent light transmittance.
The C / N ratio is also good, and the present invention relates to a magneto-optical recording medium capable of improving the recording density.

[従来の技術] 近年、情報化社会の進展に伴なって書換可能な光磁気メ
モリが注目を集めており、この光磁気メモリ用磁性膜と
してTbFeCoなどの希土類元素−遷移金属元素膜が用いら
れているが、このものは得られるカー回転角があまり大
きくないためにこれには再生信号のC/Nが十分でないと
いう欠点がある。
[Prior Art] In recent years, rewritable magneto-optical memory has attracted attention as the information-oriented society advances, and rare earth element-transition metal element film such as TbFeCo is used as a magnetic film for the magneto-optical memory. However, this has the disadvantage that the C / N of the reproduced signal is not sufficient because the Kerr rotation angle obtained is not so large.

[発明が解決しようとする課題] そのため、この種の光磁気記録媒体については従来公知
の非晶質磁性体膜の表面にSiO,SiN,AlNなどの誘電体層
(膜)を形成し、その膜厚をλ/4n(λはレーザー波
長、nは屈折率)とすることによって見かけのカー回転
角を増大させ、C/Nを大きくする(エンハンス効果)こ
とが行なわれているが、これによる特性向上はまだ不十
分であり、この誘電体層についてはさらに高屈折率で透
明性のよいものが求められている。
[Problems to be Solved by the Invention] Therefore, in this type of magneto-optical recording medium, a dielectric layer (film) such as SiO, SiN, or AlN is formed on the surface of a conventionally known amorphous magnetic film, and By increasing the film thickness to λ / 4n (where λ is the laser wavelength and n is the refractive index), the apparent Kerr rotation angle is increased and C / N is increased (enhancement effect). The improvement of the characteristics is still insufficient, and the dielectric layer is required to have a higher refractive index and good transparency.

また、ここに使用されている非晶質磁性体膜は希土類金
属を含んでいるが、この希土類金属が極めて酸化され易
いものであるために、これには高温高湿下で簡単に磁気
特性が劣化するという難点があり、上記の誘電体層に保
護膜としての役割を負わせるという提案もあるが、SiO
などの酸化物では逆に希土類元素がSiO中のOと酸化反
応を起こしてしまうためにその効果は十分なものではな
いし、SiN,AlNなどの窒化物には、このような反応性が
小さいので耐蝕性向上という目的には適しているもの
の、これには樹脂基板などに成膜するときにクラックが
生じ易く、機械的強度に問題がある。
Further, the amorphous magnetic film used here contains a rare earth metal. However, since this rare earth metal is extremely easily oxidized, it has a magnetic property easily under high temperature and high humidity. There is a problem that it deteriorates, and there is a proposal that the above dielectric layer plays a role as a protective film.
In the case of oxides such as, on the contrary, the effect is not sufficient because the rare earth element causes an oxidation reaction with O in SiO, and nitrides such as SiN and AlN have such a small reactivity. Although it is suitable for the purpose of improving the corrosion resistance, it has a problem in mechanical strength because cracks easily occur when a film is formed on a resin substrate or the like.

なお、この誘電体膜についてはBNを使用することも提案
されており[M.Asano et al,IEEE.Trans.Magn.MAG-23,2
620,(1987)参照]、これは屈折率が大きく、透明であ
り、誘電体膜としての特性もすぐれているが、これには
スパッタリング法で成膜しても完全なアモルファス状態
で形成することが難しく、組成が不均一で表面に凹凸が
生じてしまい、耐久性の点に問題がある。
It is also proposed to use BN for this dielectric film [M.Asano et al, IEEE.Trans.Magn.MAG-23,2
620, (1987)], which has a large refractive index, is transparent, and has excellent characteristics as a dielectric film, but it must be formed in a completely amorphous state even if it is formed by sputtering. However, the composition is non-uniform and unevenness occurs on the surface, which is problematic in terms of durability.

[課題を解決するための手段] 本発明はこのような課題を解決することのできる光磁気
記録媒体に関するもので、これは光の入射側に置かれる
透明基板上に、誘電体層、磁性膜、反射膜を設けてなる
光磁気記録媒体において、誘電体層がHを含むBNからな
る非晶質材料から作られることを特徴とするものであ
る。
[Means for Solving the Problems] The present invention relates to a magneto-optical recording medium capable of solving the above problems, which includes a dielectric layer and a magnetic film on a transparent substrate placed on the light incident side. In a magneto-optical recording medium provided with a reflective film, the dielectric layer is made of an amorphous material made of BN containing H.

すなわち、本発明者らはカー回転角が大きく、光透過性
がすぐれていてC/Nもよく、記録密度も向上した光磁気
記録媒体を開発すべく種々検討した結果、基体上に設け
られる誘電体層をHを含むBNからなる非晶質材料(以下
アモルファスBN:H膜材料と略記する)で作ると、1)こ
の膜材料がHを含んでいるので、Hを含まないアモルフ
ァスBN膜にくらべてアモルファスになり易く、組成が均
一で表面の平滑な膜を得ることができる、2)従来用い
られてきたSiO,SiN,AlNなどが屈折率1.4〜1.8であるの
に比べて、このアモルファスBN:H膜は屈折率が1.75〜2.
15であるために、大きなエンハンス効果をもっており、
これはまた光透過性がよく、特に可視〜赤外領域で極め
て高い透過性を有するので、C/Nの大きな光磁気記録媒
体を与える、3)アモルファスBN:H膜は熱伝導性が小さ
いために照射するレーザーの熱拡散が小さく、記録ビッ
ト径の広がりを抑えることができるので、記録密度の向
上をはかることができる、4)従来の保護膜にくらべて
耐久性、機械的強度の面ですぐれているので、磁性膜の
保護が図れるという効果の得られることを見出し、この
アモルファスBN:H膜の形成方法などについての研究を行
なって本発明を完成させた。
That is, the present inventors have conducted various studies to develop a magneto-optical recording medium having a large Kerr rotation angle, excellent light transmittance, good C / N, and improved recording density. When the body layer is made of an amorphous material made of BN containing H (hereinafter abbreviated as amorphous BN: H film material), 1) this film material contains H. Compared to the conventionally used SiO, SiN, AlN, etc., which have a refractive index of 1.4 to 1.8, this amorphous film is more likely to become amorphous and has a uniform composition and a smooth surface The BN: H film has a refractive index of 1.75 to 2.
Since it is 15, it has a great enhancement effect,
It also has a high light-transmitting property and has a very high light-transmitting property especially in the visible to infrared region, which gives a magneto-optical recording medium with a large C / N. 3) The amorphous BN: H film has a low thermal conductivity. Since the thermal diffusion of the laser irradiating the surface is small and the spread of the recording bit diameter can be suppressed, it is possible to improve the recording density. 4) In terms of durability and mechanical strength compared to conventional protective films Since it is excellent, it was found that the effect of protecting the magnetic film can be obtained, and the present invention was completed by conducting research on the method of forming this amorphous BN: H film.

以下にこれをさらに詳述する。This will be described in more detail below.

[作 用] 本発明の光磁気記録媒体は透明基板上に誘電体層、磁性
膜、反射膜を設けてなる光磁気記録媒体における誘電体
層をアモルファスBN:H膜としたものである。
[Operation] The magneto-optical recording medium of the present invention has an amorphous BN: H film as the dielectric layer in the magneto-optical recording medium in which the dielectric layer, the magnetic film and the reflective film are provided on the transparent substrate.

この光磁気記録媒体の構成は公知のものであり、これは
例えば第1図に示したように、トラッキング用ガイドグ
ループが形成されたガラス、石英ガラス、ポリカーボネ
ート樹脂、ポリメチルメタクリレート樹脂などからなる
透明基板1の上に誘電体膜2、磁性膜3、誘電体膜2と
同質の誘電体膜4および反射膜5を順次積層されたもの
であり、これは第2図に示したように透明基板7の上に
誘電体膜8、磁性膜9、誘電体膜10を順次積層した3層
構造のものであってもよく、これらにおいてはこの透明
基板1,7の光の入射側から光6,11が入射すると光6は反
射膜5で反射され、磁性膜の膜厚を厚くした第2図のも
のでは入射光11は磁性膜9で反射される。
The structure of this magneto-optical recording medium is known, and as shown in FIG. 1, for example, it is made of glass, quartz glass, polycarbonate resin, polymethylmethacrylate resin, etc. on which tracking guide groups are formed. A dielectric film 2, a magnetic film 3, a dielectric film 4 of the same quality as the dielectric film 2 and a reflective film 5 are sequentially laminated on a substrate 1, which is a transparent substrate as shown in FIG. 7 may have a three-layer structure in which a dielectric film 8, a magnetic film 9, and a dielectric film 10 are sequentially laminated on the transparent substrate 1, 7 from the light incident side of the transparent substrate 1, 7. When 11 is incident, the light 6 is reflected by the reflective film 5, and in the case of FIG. 2 in which the thickness of the magnetic film is thick, the incident light 11 is reflected by the magnetic film 9.

本発明の光磁気記録媒体ではこの誘電体膜2,8および/
または4,10が前記したアモルファスBN:H膜で形成される
のであるが、この誘電体膜の形成は三塩化ほう素(BC
l3)、三フッ化ほう素(BF3)のようなハロゲン化ほう
素やジボラン(B2H6)のような水素化ほう素からなるほ
う素源とアンモニア(NH3)やアミン類などのような含
窒素ガスからなる窒素源を反応装置中に導入し、化学気
相蒸着法(以下CVD法と略記する。)で行えばよいが、
このCVD法については真空装置内に反応ガスを導入し、
プラズマ励起してこれを分解させ、基板上に膜を形成さ
せるプラズマCVD法とすれば400℃以下の低温下でも成膜
が可能となるので、耐熱性で問題となる樹脂基板の場合
に有利性が与えられる。なお、この場合上記したほう素
源、窒素源がいずれも水素原子を有しないものである場
合にはH2ガスまたは含水素ガスを第4成分として併用す
る必要があるが、原料ガスの入手性および取扱いの容易
さからこの原料ガスはB2H6とNH3とすることが好まし
い。
In the magneto-optical recording medium of the present invention, the dielectric films 2, 8 and / or
Alternatively, 4,10 are formed by the above-mentioned amorphous BN: H film, but this dielectric film is formed by boron trichloride (BC
l 3 ), boron halides such as boron trifluoride (BF 3 ) and boron hydrides such as diborane (B 2 H 6 ), and ammonia (NH 3 ) and amines, etc. A nitrogen source composed of a nitrogen-containing gas such as that described above may be introduced into the reaction apparatus and a chemical vapor deposition method (hereinafter abbreviated as a CVD method) may be used.
For this CVD method, introducing a reaction gas into the vacuum device,
The plasma CVD method, in which plasma is excited and decomposed to form a film on the substrate, enables film formation even at a low temperature of 400 ° C or less, which is advantageous in the case of a resin substrate where heat resistance is a problem. Is given. In this case, when neither the boron source nor the nitrogen source described above has hydrogen atoms, it is necessary to use H 2 gas or hydrogen-containing gas as the fourth component, but the availability of raw material gas It is preferable to use B 2 H 6 and NH 3 as the raw material gas from the viewpoint of easy handling.

また、この誘電体膜の形成はスパッタリング法で行なう
こともでき、この場合にはBNまたはBをターゲットと
し、真空装置内をAr-H2またはAr-H2-N2などの混合ガス
雰囲気とし、これに高周波を印加して反応スパッタリン
グによって基板に誘電体膜を形成させればよい。
The formation of this dielectric film can also be performed by a sputtering method. In this case, BN or B is used as a target, and the inside of the vacuum apparatus is set to a mixed gas atmosphere such as Ar-H 2 or Ar-H 2 -N 2. A high frequency may be applied to this to form a dielectric film on the substrate by reactive sputtering.

このようにして得た誘電体膜はアモルファスBNとHから
なる厚さ500〜1,000Åのものとされるが、この各元素の
組成比に特に制限はない。しかし、このものは屈折率が
1.75未満では媒体表面での光の多重反射によるθの見
かけ上の増大(エンハンス効果)が期待できず、逆に2.
15より大きくしようとすると膜質が低下し、機械的強度
や耐久性に悪影響が及ぼされるので、屈折率(n)が1.
75〜2.15のものとすることが望ましいが、この組成は重
量比でほう素元素100に対して窒素元素が10〜30、水素
原子が5〜15の範囲のものとすることが好ましく、これ
は成膜条件によって各元素の組成比を調節して成膜させ
ればよい。
The dielectric film thus obtained is made of amorphous BN and H and has a thickness of 500 to 1,000 Å, but the composition ratio of each element is not particularly limited. However, this one has a refractive index
If it is less than 1.75, the apparent increase of θ K (enhancing effect) due to the multiple reflection of light on the medium surface cannot be expected, and conversely 2.
If you try to make it larger than 15, the film quality deteriorates and the mechanical strength and durability are adversely affected, so the refractive index (n) is 1.
It is desirable that the composition is 75 to 2.15, but this composition is preferably such that the weight ratio is such that the nitrogen element is 10 to 30 and the hydrogen atom is 5 to 15 with respect to 100 boron element. The composition ratio of each element may be adjusted according to the film forming conditions to form a film.

なお、本発明の光磁気記録媒体は基体上に成膜されたこ
の誘電体層の上に磁性膜と反射膜を形成するのである
が、これらはいずれも公知のものでよく、この磁性膜は
希土類元素−遷移金属元素膜からなるもの、したがって
Tb,Dy,Gd,Ndなどの希土類元素とFe,Co,Niなどの遷移金
属元素からなる、例えばTbFe,TbFeCo,GdTbFe,GdDyFeCo
などからなる非晶質金属膜を第1図の構造のものでは20
0〜500Å、第2図の構造のものでは800〜1,000Å程度の
厚さでスパッタリング法で形成すればよく、この反射層
はAl,Cu,Au,Agなどの金属膜を厚さ200〜1,000Å程度で
設ければよい。
In the magneto-optical recording medium of the present invention, a magnetic film and a reflective film are formed on this dielectric layer formed on a substrate. These may be known ones. Comprising a rare earth-transition metal element film, therefore
Consisting of rare earth elements such as Tb, Dy, Gd, Nd and transition metal elements such as Fe, Co, Ni, for example TbFe, TbFeCo, GdTbFe, GdDyFeCo
Amorphous metal film consisting of
0-500Å, in the case of the structure shown in FIG. 2, it may be formed by a sputtering method with a thickness of about 800-1,000Å. This reflective layer is a metal film of Al, Cu, Au, Ag, etc. with a thickness of 200-1,000. It should be set at about Å.

[実施例] つぎに本発明の実施例,比較例をあげる。[Examples] Next, examples and comparative examples of the present invention will be described.

実施例1〜4,比較例1〜2 プラズマCVD装置にガラス基板をセットして100℃に加熱
し、装置内に第1表に示したモル比のB2H6,NH3のガスを
導入し、装置内の圧力を2.5トールに保持し200Wの高周
波を印加してプラズマCVD法で基板上にアモルファスBN:
H膜を成膜させ、この膜のB,Nの組成比をESCA,AESで、ま
たHの分析をRBS,HFSで測定すると共に、この膜の屈折
率、透過率を測定したところ第1表に示したとおりの結
果が得られた(実施例1〜3)。
Examples 1 to 4 and Comparative Examples 1 to 2 A glass substrate was set in a plasma CVD apparatus and heated to 100 ° C., and B 2 H 6 and NH 3 gases having a molar ratio shown in Table 1 were introduced into the apparatus. Then, the pressure inside the device was maintained at 2.5 Torr and a high frequency of 200 W was applied to the amorphous BN:
The H film was formed, the composition ratio of B and N of this film was measured by ESCA and AES, the analysis of H was measured by RBS and HFS, and the refractive index and transmittance of this film were measured. The result as shown in was obtained (Examples 1 to 3).

また、このアモルファスBN:H膜の形成についてはスパッ
タリング法で行なうこととし、真空装置内にガラス基板
とターゲットとしてのBNを入れ、装置内をArガス80%、
H2ガス5%、N2ガス15%からなる混合ガス雰囲気とし、
圧力を10×10-3トールとしてここに出力300Wの高周波を
印加してスパッタリングによって基板上にアモルファス
BN:H膜を形成させ、この膜の組成、屈折率および透過率
をしらべたところ、第1表に併記したとおりの結果が得
られた(実施例4)が、比較のためにこのスパッタリン
グ法でHを含まないをBNまたはSiO膜を作成したとこ
ろ、得られた誘電膜の屈折率,透過率は第1表に併記し
たように実施例4のものにくらべて劣るものであった。
In addition, this amorphous BN: H film was formed by a sputtering method, put a glass substrate and BN as a target in a vacuum device, Ar gas 80% in the device,
A mixed gas atmosphere consisting of 5% H 2 gas and 15% N 2 gas,
Amorphous on the substrate by sputtering by applying a high frequency of 300 W with a pressure of 10 × 10 -3 Torr.
When a BN: H film was formed and the composition, refractive index and transmittance of this film were examined, the results as shown in Table 1 were obtained (Example 4), but this sputtering method was used for comparison. When a BN or SiO film containing no H was prepared, the refractive index and transmittance of the obtained dielectric film were inferior to those of Example 4 as shown in Table 1.

つぎにこの実施例1で得たアモルファスBN:H膜の上にAr
ガス圧7×10-3トール、高周波出力300Wという条件で厚
さ200ÅのTbFe磁性膜を形成させ、この上に上記と同じ
プラズマCVD法でアモルファスBN:H膜を成膜させ、さら
にこの上に厚さ400Åのアルミニウム反射膜を上記した
磁性膜形成と同じ条件のスパッタリング法で形成して光
磁気記録媒体を作り、この誘電体膜の膜厚を変化させた
ときの波長633nmのレーザーに対するカー回転角の変化
をしらべたところ、第3図に示したとおりの結果が得ら
れ、またこのものの耐久性をしらべるために85℃,85%R
Hの条件下での保持時間と保磁力との関係をしらべたと
ころ、第4図に示したとおりの結果が得られた。
Next, Ar was formed on the amorphous BN: H film obtained in Example 1.
A 200 Å thick TbFe magnetic film is formed under the conditions of gas pressure of 7 × 10 -3 Torr and high frequency output of 300 W, and an amorphous BN: H film is formed on the TbFe magnetic film by the same plasma CVD method as above. A 400 Å-thick aluminum reflective film was formed by the sputtering method under the same conditions as the magnetic film formation described above to create a magneto-optical recording medium, and the Kerr rotation for a laser with a wavelength of 633 nm when the thickness of this dielectric film was changed When the change in the angle was examined, the results shown in Fig. 3 were obtained, and in order to examine the durability of this product, 85 ° C, 85% R
When the relationship between the holding time and the coercive force under the condition of H was investigated, the results shown in FIG. 4 were obtained.

なお、この実験については比較のためにこの誘電体層を
Hを含まないBNまたはSiOで形成したものについても行
なったところ、第3図、第4図に併記したとおりの結果
が得られ、実施例1のものは膜厚dがd=λ/4nである8
0nm付近でθが最大値2.0となるので十分なエンハンス
効果のあることが示されているが、BN,SiOではこれに劣
り、さらに実施例1のものは500時間経過後も保磁力が
殆んど低下しないのに対し、BN,SiOではこれがかなり低
下することが確認された。
For the sake of comparison, when this dielectric layer was formed of BN or SiO containing no H, the results as shown in FIGS. 3 and 4 were obtained. In Example 1, the film thickness d is d = λ / 4n 8
It has been shown that θ K has a maximum value of 2.0 at around 0 nm, so that it has a sufficient enhancement effect. However, BN and SiO are inferior to this, and in Example 1, the coercive force is almost constant even after 500 hours. It was confirmed that this did not decrease much, whereas that of BN and SiO decreased considerably.

[発明の効果] 本発明は光磁気記録媒体に関するもので、これは前記し
たように基板に誘電体膜、磁性膜、反射膜を設けた光磁
気記録媒体において、この誘電体をHを含むBNからなる
非晶質材料とするというものであり、これによればこの
誘電体膜が屈折率1.75〜2.15のものとなるので大きなエ
ンハンス効果をもつものとなり、カー回転角の増大がは
かれるし、これは透過性がすぐれているのでC/Nが増大
されるほか、この非晶質膜はHを含んでいるので膜面が
平滑なものとなり、熱伝導度が小さいのでレーザーの熱
拡散が小さくなって記録ビットの径の広がりが抑えられ
るので記録密度が向上されるという有利性が与えられ
る。
[Effects of the Invention] The present invention relates to a magneto-optical recording medium, which is a magneto-optical recording medium having a substrate provided with a dielectric film, a magnetic film and a reflective film as described above. According to this, since this dielectric film has a refractive index of 1.75 to 2.15, it has a large enhancing effect, and the Kerr rotation angle can be increased. Has excellent transparency, so that C / N is increased, and since this amorphous film contains H, the film surface becomes smooth and the thermal conductivity is low, so the thermal diffusion of the laser is small. As a result, the expansion of the diameter of the recording bit is suppressed, so that there is an advantage that the recording density is improved.

【図面の簡単な説明】[Brief description of drawings]

第1図、第2図は光磁気記録媒体の構成図、第3図は実
施例、比較例における誘電体膜の膜厚とカー回転角との
関係グラフ、第4図は実施例、比較例における保持時間
と保磁力との関係グラフを示したものである。 図中の符号: 1,7……透明基板 2,4,8,10……誘電体膜(層) 3,9……磁性膜 5……反射膜
1 and 2 are configuration diagrams of a magneto-optical recording medium, FIG. 3 is a relationship graph between the Kerr rotation angle and the film thickness of a dielectric film in Examples and Comparative Examples, and FIG. 4 is Examples and Comparative Examples. 3 is a graph showing the relationship between the holding time and the coercive force in FIG. Symbols in the figure: 1,7 …… Transparent substrate 2,4,8,10 …… Dielectric film (layer) 3,9 …… Magnetic film 5 …… Reflective film

───────────────────────────────────────────────────── フロントページの続き (72)発明者 野村 忠雄 神奈川県川崎市高津区坂戸100―1 信越 化学工業株式会社コーポレートリサーチセ ンター内 (72)発明者 清水 佳昌 神奈川県川崎市高津区坂戸100―1 信越 化学工業株式会社コーポレートリサーチセ ンター内 (72)発明者 久保田 芳宏 群馬県安中市磯部2丁目13番1号 信越化 学工業株式会社精密機能材料研究所内 (72)発明者 樫田 周 群馬県安中市磯部2丁目13番1号 信越化 学工業株式会社精密機能材料研究所内 (56)参考文献 特開 昭63−18546(JP,A) 特開 昭62−67750(JP,A) 特開 昭61−39955(JP,A) 特開 昭60−191449(JP,A) 特開 平3−105744(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tadao Nomura 100-1 Sakado, Takatsu-ku, Kawasaki-shi, Kanagawa Shin-Etsu Chemical Co., Ltd. Corporate Research Center (72) Inventor Yoshimasa Shimizu 100 Sakado, Takatsu-ku, Kawasaki-shi, Kanagawa 1 Shin-Etsu Chemical Co., Ltd. Corporate Research Center (72) Inventor Yoshihiro Kubota 2-13-1 Isobe, Annaka-shi, Gunma Shin-Etsu Chemical Co., Ltd. Precision Materials Research Laboratory (72) Inventor Shu Kashida Gunma 2-13-1 Isobe, Annaka-shi, Japan Shin-Etsu Kagaku Kogyo Co., Ltd., Institute for Precision Functional Materials (56) References JP-A-63-18546 (JP, A) JP-A-62-67750 (JP, A) Kai 61-39955 (JP, A) JP 60-191449 (JP, A) JP 3-105744 (JP, A)

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】光の入射側に置かれる透明基板上に、誘電
体層、磁性膜、反射膜を設けて成る光磁気記録媒体にお
いて、誘電体層がHを含むBNからなる非晶質材料で作ら
れることを特徴とする光磁気記録媒体。
1. A magneto-optical recording medium comprising a dielectric layer, a magnetic film, and a reflective film provided on a transparent substrate placed on the light incident side, wherein the dielectric layer is an amorphous material made of BN containing H. A magneto-optical recording medium characterized by being made of.
【請求項2】非晶質材料が重量組成比でB:N:Hが100:10
〜30:5〜15からなるものとされる請求項1に記載の光磁
気記録媒体。
2. The amorphous material has a weight composition ratio of B: N: H of 100: 10.
The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording medium comprises: -30: 5-15.
【請求項3】非晶質材料が屈折率(n)=1.75〜2.15の
ものとされる請求項1に記載の光磁気記録媒体。
3. The magneto-optical recording medium according to claim 1, wherein the amorphous material has a refractive index (n) = 1.75 to 2.15.
【請求項4】誘電体層がプラズマCVD法またはスパッタ
リング法によって形成される請求項1に記載の光磁気記
録媒体。
4. The magneto-optical recording medium according to claim 1, wherein the dielectric layer is formed by a plasma CVD method or a sputtering method.
【請求項5】誘電体層がアンモニアとジボランを原料と
するプラズマCVD法で形成される請求項1に記載の光磁
気記録媒体。
5. The magneto-optical recording medium according to claim 1, wherein the dielectric layer is formed by a plasma CVD method using ammonia and diborane as raw materials.
【請求項6】誘電体層がBNをターゲットとし、Ar-H2
合ガス雰囲気下またはAr-N2-H2混合ガス雰囲気下でのス
パッタリング法によって形成される請求項1に記載の光
磁気記録媒体。
6. The magneto-optical device according to claim 1, wherein the dielectric layer is formed by sputtering using BN as a target in an Ar-H 2 mixed gas atmosphere or an Ar-N 2 -H 2 mixed gas atmosphere. recoding media.
【請求項7】誘電体層がBをターゲットとし、Ar-N2-H2
混合ガス雰囲気下でのスパッタリング法で形成される請
求項1に記載の光磁気記録媒体。
7. The dielectric layer targets B, and Ar—N 2 —H 2
The magneto-optical recording medium according to claim 1, which is formed by a sputtering method in a mixed gas atmosphere.
JP27947389A 1989-10-26 1989-10-26 Magneto-optical recording medium Expired - Lifetime JPH073707B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27947389A JPH073707B2 (en) 1989-10-26 1989-10-26 Magneto-optical recording medium
EP90120313A EP0427982B1 (en) 1989-10-26 1990-10-23 Magneto-optical recording medium
DE69016171T DE69016171T2 (en) 1989-10-26 1990-10-23 Magneto-optical recording medium.
US07/601,659 US5118573A (en) 1989-10-26 1990-10-25 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27947389A JPH073707B2 (en) 1989-10-26 1989-10-26 Magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPH03141058A JPH03141058A (en) 1991-06-17
JPH073707B2 true JPH073707B2 (en) 1995-01-18

Family

ID=17611549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27947389A Expired - Lifetime JPH073707B2 (en) 1989-10-26 1989-10-26 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JPH073707B2 (en)

Also Published As

Publication number Publication date
JPH03141058A (en) 1991-06-17

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