JPH0736468B2 - Conductive transfer member - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a conductive transfer member (d).
ecal). Specifically, it relates to the structure of a conductive transfer member filled with an inorganic insulating material.

[0002]

BACKGROUND OF THE INVENTION Today, there is an increasing demand for packaging dense circuits. To meet these demands, new packaging concepts have been developed using manufacturing methods close to the level of device technology.

To this end, several new packaging methods have been developed, one of which is the use of transfer members.

Transfer technology initially relied on the use of adhesives that could be used for two purposes. The first is the purpose of adhering the metallurgical foil and the image to the carrier during the whole process, and the second is the purpose of completely separating the polymer and the metallurgical foil during transfer to the substrate.

Early transfer members were manufactured from three-part laminates. Process laminates consisted of metal layers in the form of thin metal or alloy foils adhered to a polymer carrier with an adhesive. The adhesive was also a release material that could be separated from the carrier during transfer. The reliability of conductor stripping was ensured by making the surface energy of the polymer layer much less than the surface energy of the conductor or substrate being transferred. For example, U.S. Pat.
See the specification. These early solid conductors were formed by photolithography and etching processes.

[0006] Early studies have shown that such transfer methods have limitations in achieving proper geometry in a reliable manner. It has been found that the image transfer is more pronounced than in glasswork and results from the absorption and adsorption of process fluids. The film carrier expanded or contracted depending on its position on the absorption isotherm when exposed to the process environment.

Since the limitations of organic polymers as carriers have been recognized, research has focused on finding materials that can maintain dimensional integrity throughout the process and can be used as carriers.

The material of choice in place of the labile polymer is a metal foil, which does not absorb the process fluid and is less likely to deform even at high process temperatures.

It has been found that when such a metal foil is used in a laminated structure, the metallurgical separation from the metal foil carrier cannot be performed uniformly. This was a result of the uniform adhesion of the release adhesive to both metal surfaces, namely the metallurgy layer and the metal foil carrier.

To overcome this deficiency, the surface energy of the metal carrier was reduced to a level much less than the metallurgy of the transfer member and the surface energy of the substrate receiving the transfer member. As a result, peeling of the conductive metallurgy from the metal carrier could be performed with high reliability. The desired adhesive properties were obtained by coating the surface of the carrier foil with a substance such as polyimide, which restored the release properties of the original carrier. It has been found that a metal carrier with a two-layer release material works as good as a conductor transfer with respect to conductor transfer and improves shape placement accuracy.

Utilizing an additional step, another method of forming the conductor directly on the metal carrier can be used. The use of plating or lift-off processes in conjunction with photolithography processes allows for additional conductor formation. This technique provides a means to achieve increased package density due to the superior imaging capabilities inherent in the additive process.

A simple transfer member structure has been developed to allow direct stripping of the conductor from the metal carrier without the use of stripping materials. This technique can be applied to conductor formation by both addition and removal steps, allowing a wide range of metals and alloys to be utilized as conductors. This is explained in U.S. Pat. No. 4,879,156.

Another packaging method is the intaglio printing process. The pattern is crimped below the printing plate and the printing of the design forms the image of the relief. This is disclosed in US Pat. No. 4,879,156. This technology
It can be utilized in a packaging process where a conductor pattern is etched on the surface of a metal carrier to a depth equal to the desired thickness of the final metallurgy, and then the desired metallurgy is plated to form the conductor. This technique allows the conductor to be formed in the shape defined by the intaglio image on the carrier.

There are several other techniques used to package interconnects. For example, U.S. Pat.
No. 222 discloses a connector screen for interconnecting adjacent surfaces of a board or module. The connector screen has conductive connector elements separated by a mesh of non-conductive material.

A connector assembly for a circuit board inspection system is disclosed in US Pat. No. 4,707,657.
An electrically insulating material having a circuit of conductive material is disposed on opposite surfaces. The inspection points are insulated from each other.

A process for forming a multi-layer ceramic substrate having a solid metal conductor is disclosed in US Pat. No. 4,753,694. Multilayer ceramic substrates include forming a solid, non-porous conductor pattern on a support sheet having a release layer and then transferring the pattern to a ceramic green sheet.

US Pat. No. 4,926,549 discloses a method of forming an electrical connection member. A carrier is formed on the first conductive member, a hole is etched in a portion of the carrier to expose the first conductive member, and a recess is provided therein. The recess has a diameter larger than the diameter of the corresponding hole. The individual holes formed in the carrier are filled with a second conductive material, and subsequently the first conductive member is removed from the carrier, thereby having a plurality of conductive materials protruding from the upper and lower surfaces of the carrier. A carrier is formed. A carrier having a plurality of conductive protrusions can be used to connect a semiconductor device to a circuit board.

IBM Technical Disclosure
Bulletin (Vol. 27, No.3, pp.1404-1405, August 198
4) discloses a process of transferring a thin film conductor pattern to a multilayer ceramic substrate. The conductor pattern is formed on the carrier. The conductor pattern is completely blanketed by the insulator, and holes are provided in the insulator to expose the top surface of the conductor pattern. The holes are further filled with a conductive material, and after fixing the assembly to the multilayer substrate, the carrier is removed.

One of the problems encountered in earlier work was the formation of gaps at the interface between vias such as copper vias and insulator sidewalls such as ceramic sidewalls. This kind of gap allows for
The fluid penetrates and is captured. As a countermeasure against this problem, the gap was backfilled with polyimide. This process has its inherent drawbacks: poor adhesion between the polyimide and copper vias, and difficulty in completely curing the polyimide that has penetrated inside the substrate. These inherent drawbacks result in defects in the thin film wiring structure that is then deposited on the top surface of the substrate.

Current process technology limits the geometry of the top metallization and also forms via gaps, which creates post-processing penetration problems.

The present invention provides a transfer member structure having studs for via alignment. This structure is laminated to a multilayer ceramic substrate and then fired and sealed. The process of the present invention does not crack the substrate, unlike conventional top surface processes. Fine line metallization is also performed. Moreover, rapid alignment of the top features with the vias is achieved.

In the present invention, there is no thin film process on a ceramic substrate, and a novel etching technique and transfer member structure are used to make a thin film wiring equivalent. This transfer member structure is formed before sintering and remains after sintering.

The structure of the transfer member is composed of wiring and C4 (Controlled Collapse Chip C) on the upper surface of the solid metal stud.
onnection) consists of contact pads (acting as electrical interconnects) with joint connections and conductive contact pads. The only necessary post-sinter treatment in this process is
Ni and Au are plated to create a structure that limits the solder balls of the C4 joint.

[0024]

SUMMARY OF THE INVENTION The present invention provides a conductive transfer member that does not compromise the structural integrity of the package or device functionality.

Another object of the invention is electrical wiring, studs, stud caps, C4 joint contact pads,
An object is to provide an improved conductive transfer member having conductive contact pads and the like.

Yet another object of the present invention is to provide a plurality of conductive transfer members that can be stacked and bonded together. Another object of the present invention is to provide a conductive transfer member that can be fixed to a substrate.

Another object of the present invention is to provide a sealed package after the conductive transfer member is firmly fixed to the substrate or module.

Another object of the present invention is to provide an insulating layer having electrical interconnections.

Another object of the present invention is to provide a conductive member that can be tested for electrical conductivity or structural integrity after the transfer member has completed the sintering cycle.

[0030]

SUMMARY OF THE INVENTION In one aspect, an electrical connecting member of the present invention has at least one first conductive island and at least one second conductive island, and has first and second conductive islands. The island has at least one third conductive island therebetween, and the material forming the third island is different from the material forming the first and second conductive islands, and the third conductive island and
At least one of the first and second conductive islands
The part is surrounded by an inorganic insulating material.

[0031]

EXAMPLE A conductive transfer member is a pattern formed in a metallurgy system on a carrier, and the carrier is a multilayer ceramic.
It has surface properties that allow the transfer of a conductor to a suitable substrate or dielectric such as a package. After pattern transfer, an inorganic substrate, such as a ceramic substrate, is sintered for permanent bonding.

The present invention provides a transfer member for a single layer or multiple layer multilayer ceramic package, which comprises:
It replaces the thick film conductors of multilayer ceramic modules.

Another important advantage of this technique is an improvement in the technique for forming fine circuit wiring. Using this technique, conductors can be reduced in size and wiring density can be increased. This technique results in conductors that approach the resolution of the underlying artwork, thus improving the potential for increased circuit density.

Depending on the embodiment, other advantages of the invention are: a) a self-aligned conductive connecting member structure on a metallurgy aligned / fixed on both sides of the etch stop material. thing. b) Stud cap, stud,
And a transfer member structure that incorporates an etch stop layer to define the fine circuit traces. c) to prevent fluid penetration in the post-sintering process,
The via cap has a structure that seals the substrate.

D) The structure does not require flattening after sintering. e) The structure does not require backfilling with polyimide to seal the via in the glass / ceramic substrate. f) Since there is no circuit wiring connected to the surface of the transfer member, the stud of the transfer member needs to catch the bottom surface via only 50% of the stud area, and the pattern alignment to the rest of the substrate is easier with the spray sheet The structure must be done in g) A structure capable of reliably aligning the stud with the circuit pattern formed by the thin film by the double-sided photolithography exposure step.

A workpiece or base 5 is shown in FIG. The base 5 includes an etch stop layer 11 which is an intermediate layer,
This is a three-layer structure composed of conductive metal layers 13 and 15 sandwiching this. The etch stop layer 11 is a conductive material and is any material that can selectively etch the other two metal layers 13 and 15. The purpose of the etch stop layer 11 will be described later. The etch stop layer 11 must be thick enough to prevent penetration of the etchant. Suitable materials for the etch stop layer are materials selected from the group including aluminum, chromium, copper, gold, molybdenum, nickel, palladium, platinum, silver, titanium, tungsten, or alloys thereof.

Two outer layers, conductive materials 13 and 1
5 can be the same or different material, depending on the desired end result. Suitable materials for conductive materials 13 and 15 are materials selected from the group comprising aluminum, copper, gold, iron, molybdenum, nickel, tungsten, or alloys thereof. Similarly, the two outer layers 13 and 15 are of the same or different thickness, depending on how these layers are utilized in the final package. According to FIG. 1, the metal layer 15 is made of a thin material and the metal layer 13 is made of a thicker material. However, the thickness of the upper and lower layers can be arbitrarily changed to form a desired transfer member shape. .

The workpiece or base 5 shown in FIG.
Can be manufactured by many conventional techniques, such as coating, coating, vapor deposition, plating, sputtering, or any other suitable method. These processes may be combined to make the base 5. The desired conductor thickness can be obtained by any of these methods. One layer of the base 5 can be used as a starting layer (ie carrier) so that the other two layers can be formed on it. The etch stop layer 11 can be used as a starting layer and the outer layers 13 and 15 can be formed simultaneously or sequentially. This base 5 provides a dimensionally stable structure throughout the subsequent process.

FIG. 2 shows a base 5 having a resist pattern on both sides. When the base 5 is completed, photoresists 17 and 19 are provided on the exposed surfaces of the conductive materials 13 and 15. This photoresist 17 and 19
Can be formed by a wet or dry process such as dipping, electrophoresis, laminating, roller coating, spinning, spraying, or a combination of these processes. Photoresists 17 and 19 can be negative or positive photoresist, depending on the photomask used and the desired end result.

The two photomasks with the desired pattern are aligned with each other, the base 5 with the photoresists 17 and 19 is placed between the aligned photomasks, and the photoresists 17 and 19 are exposed. . The photomask consists of circuit patterns, or patterns of through vias, or a combination of both, or other electrical features such as studs and stud caps. Photoresists 17 and 19 can be exposed simultaneously or sequentially. It is desirable to expose both sides of the base 5 at the same time to ensure alignment.
Similarly, the two sides of the photoresist can be developed simultaneously or sequentially with a combination of photoresists. The photoresist is developed by any suitable technique, such as dipping, spraying and the like. The photoresist remaining after development defines the circuit pattern and the final image of the studs and stud caps. Figure 2
Photoresist patterns 17 and 1 as shown in FIG.
9 has holes or open areas 16 and 18, respectively, from which conductive materials 15 and 13 are removed in the next step.

FIG. 3 shows a partial etching of the base 5.
The exposed conductive material 13 and 15 of the imaged base 5 is removed by a conventional etching process such as electrolytic etching, chemical etching, or dry etching. By using dissimilar metals or metals with different thicknesses as the conductive materials 13 and 15, the etch stop layer 11 is exposed on one side after partial etching. This is usually the thinner conductive metal side containing the circuit pattern and stud cap, or the conductive metal side that is first etched. The side opposite to the side where the etch stop layer 11 is exposed is etched until it reaches the etch stop layer 11, or
Or it is partially etched. This is due to the thickness ratio of the two outer conductive layers. The etch stop layer 11 allows the two outer layers to be processed individually or simultaneously. The advantage of this is that it makes it possible to form patterns of different density on both sides or to improve the aspect ratio (ratio of image dimensions to thickness) of the image. The first etching of the conductive materials 13 and 15
The top surface is etched through the opening 16 and ends after the etch stop layer 11 is exposed. This allows
Openings 21 that define the cap 12 and the circuit wiring 14.
Is formed. This etched metallurgy is called an island. The etching material or etching process used must be an etching material or etching process suitable for etching only desired materials and features. In FIG. 3, the circuit wiring 14 and the stud cap 12 defined on the upper surface of the base 5 are shown. Etching of the thin conductive metal layer 15 is continued until there is no material that electrically connects the stud cap 12 and the circuit wiring 14 to each other, except through the conductive etch stop layer 11. In FIG. 3, the underside of the base 5 is exposed only to define the opening 23 because co-etching was used.

FIG. 4 is a view in which the resist 17 is removed from the upper surface of the base 5. Photoresist 17 is removed from the top by any suitable removal technique. Here, only the photoresist 17 is etched to remove the photoresist.
It should be considered to use a suitable removal process so as not to damage or remove the image 19.

FIG. 5 shows a step of providing the adhesive peeling substance 25 on the upper surface of the partially etched base 5. On the top,
Suitable debonding material 2 such as polymethylmethacrylate
5 can be sprayed. The debonding substance 25 is
It is provided on the upper surface of the etched transfer base 5 using roller coating, spinning, spraying or the like. The debonding substance 25 is attached along the shape of the upper surface of the base 5, fills the opening 21, and forms the opening 27.

FIG. 6 shows the manner in which a support member or carrier 29 is fixed to the debonding material 25 of the partially etched base 5. The carrier 29 can be any suitable polymer or metal so long as it adheres to the debonding material 25. For example, if a polymer is used for carrier 29, a polyester or polyimide material can be used. On the other hand, when a metal is used as the carrier 29, the carrier 29 may be coated on one or both sides with a polymer such as polyimide, or at least on the surface contacting the debonding material 25 on the base. It should ensure that the carrier 29 is peeled from the base 5 in the next step.

A suitable material for the metal carrier 29 is copper. The primary function of the debonding material or layer 25 is to attach the carrier 29 to the partially etched base 5 so that the carrier 29 can be removed from the decal base 5 in the next step. The carrier 29 serves two purposes. One is to mechanically support the etched base 5, and another to act as an etch stop layer for one side of the base 5 so that the other side of the base 5 can be further processed. That is. Carrier 29 is etched
The only case required as a stop layer is when the same metal is used as the conductive materials 13 and 15. The carrier 29 is fixed to the base 5 on the side to which the debonding substance 25 is attached by means such as lamination, heating, or pressure.

FIG. 7 shows a state where the lower portion of the base 5 is completely etched. The base 5 with the photoresist 19 and carrier 29 protecting the desired image on the top and bottom surfaces, respectively, is etched in a second etch until the bottom surface of the etch stop layer 11 is exposed. This second etch forms the openings 33 and the studs or interconnects 31. This etched metallurgy is also called an island.
This etching under the base 5 is a chemical etching,
It is performed by conventional means such as electrolytic etching or dry etching.

FIG. 8 is a view showing a state in which the photoresist 19 has been removed from the base 5. This is typically done by wet techniques such as re-exposure, development, or chemical stripping, or dry techniques such as RIE or ashing.

FIG. 9 shows the exposed etch stop layer 1
1 is finally removed to show the transfer base 5 with etch stop interconnects or islands 32 formed. In some cases, etch stop layer 11 need not be removed from the base, as described below. When the etch stop layer 11 is removed, it can be performed by chemical etching, electrolytic etching, or dry etching. An etch stop interconnect 32 electrically connects the stud cap 12 to the stud 31. By this etching, the opening 33 is expanded to form the opening 35. Removal of the etch stop layer 11 isolates all formed electrical interconnections and prevents the stud 31 and circuit wiring 14 from shorting.

In some cases, the exposed etch stop layer 11 need not be removed from the base 5, as shown by the dashed line 36 in FIG. This is the next exposed etch
It depends on how the stop layer 11 works. For example, some etch stop materials interact with the insulating material to form a non-conductive oxide during the sintering process to act as an insulator. A good example of this is the use of chromium as the etch stop layer 11. During the sintering process, the exposed etch stop material forms the insulator chromium oxide.

FIG. 10 shows a fully etched base 5
It is a figure which shows the state which filled the opening 35 inside with the slurry 39 of an inorganic insulating material. The inorganic insulating material 39 is
Completely enclose the stop interconnection or island 32 and at least a portion of either the stud cap 12 or the stud 31, or both, to prevent electrical shorting between adjacent electrical members. There must be. Inorganic insulator or dielectric material 3
9 is usually selected from the group consisting of aluminum oxide, ceramics, or glass-ceramic materials. The filling of the opening 35 can be performed by roller coating, spraying, spinning, or the like. The thickness of the dielectric material 39 is lower than the height of the stud 31. During the spraying process, the slurry flows over the studs and adheres so that it "cleans itself". The inorganic contamination on the upper surface 41 of the stud 31 will be minimal. The termination 41 of the stud 31 may protrude from the surface 42 of the dielectric material 39 or may be flush with the surface 42 of the dielectric material 39. This is done by suitable coating techniques, planarization, or dry etching steps.

As previously mentioned, the exposed etch stop layer 11 need not be removed. If the etch stop layer 11 remains on the pattern, the exposed etch stop layer 11 should consist of a material that forms a non-conductive oxide during the sintering process. The unexposed etch stop layer 11 between the stud cap 12 and the stud 31 forms a conductive island, as does the etch stop interconnect 32. this is,
Due to the fact that the conductive material of the stud cap 12 and the stud 31 diffuses into the etch stop layer 11 and forms an electrical connection at the interface boundary. The etch stop layer 11 left unexposed is etched metal stud cap 1 when converted to oxide.
2 will promote adhesion between the circuit wiring 14 and the insulating material 39, such as a ceramic dielectric material.

A completed transfer member with the exposed etch stop layer 11 removed and ready for transfer to the desired substrate is shown in FIG. The completed transfer means is ready for transfer to an unsintered inorganic substrate, such as a ceramic substrate, and the completed structure will provide the substrate with the required metallurgy and interconnects.

FIG. 11 is a view showing a state in which the transfer member shown in FIG. 10 is bonded to the substrate 45 or another layer 45.
The conductive transfer member, that is, the electrical connection member, is superposed or bonded on the inorganic substrate or other conductive transfer member before sintering,
Then, they are laminated and sintered. The image or shape of the transfer member is aligned with the image or shape of the substrate 45 or the next layer 45 and bonded by heat or pressure. This conductive decal must be bonded to the inorganic layer or substrate 45 prior to sintering. The carrier 29 is a dielectric 39
After it has been bonded to the dielectric 43 of the layer or substrate 45, it is stripped and removed from the transfer member prior to the sintering cycle. The debonding material 25 remaining on the transfer member after the carrier 29 has been peeled or removed is burned off and removed during the sintering process to form the surface 52. During this bonding process, the stud connection 44 of the layer or substrate 45 adheres to the end 41 of the stud 31 of the transfer member and fuses together during the sintering process. After sintering the transfer member, electrical continuity or structural integrity can be easily inspected to reduce defects in the final product.

FIG. 12 shows a state in which the conductive transfer member of the present invention is further processed. The structure of FIG. 11 having a transfer member bonded to a layer or substrate 45 is bonded to another structure 55 before sintering formed in the same manner, or a stack layer 55. If the dielectric in structure 55 is an inorganic material, such as ceramic, structure 55 must be bonded to the pre-sintered structure of Figure 11, after which all layers are sintered. During the sintering process, the stud connection 51 merges with the stud cap 12 and the dielectric 59 adheres to the dielectric 39 at the boundary 52. The typical pattern also includes circuit wiring 54. If the dielectric in structure 55 is an organic material such as a polymer, structure 55 will be adhered to the as-sintered structure formed in FIG. This bonding is done by a heat and pressure laminating process, where the stud connection 51 is bonded to the stud cap 12 and the dielectric 59 is bonded to the dielectric 39 at the boundary 52. As shown in FIG. 12, the substrate 55 can also include circuit wiring 54.

FIG. 13 is another embodiment of the completed conductive transfer member or electrical connection member of the present invention. The process described above involved a transfer member in which the two conductive metal layers 13 and 15 were unequal in thickness, that is, the side with the circuit pattern 14 and the stud cap 12 was thin and the side with the stud 31 was thick. As mentioned above, the method of the invention can also be used in situations where the two conductive metal layers 13 and 15 have equal thickness. The manufacturing process is basically the same as the method described above, the only difference being the final mode of use of the product. The product can be used as a through via layer without circuit patterns on both sides, ie with studs only. A dielectric 39 separates the studs 61 from each other, as shown in FIG. The studs 31 and 61 may be the same material or different materials. Further, they may have the same height and thickness, or may have different heights. In FIG.
FIG. 3 shows a cross-sectional view of a completed conductive transfer member before sintering, in which both outer metal layers have the same thickness. This product is used as a typical interconnect to bond pre-sintered circuit patterns to a pre-sintered inorganic substrate, or to bond a pre-sintered inorganic substrate to another pre-sintered inorganic substrate. can do. After the above bonding process, the finished package is sintered to form a final product.

FIG. 14 illustrates an embodiment of coupling the completed electrical connection member of the present invention to a set of substrates or electrical devices 65 and 75. Substrates 65 and 75 can have stud connections 62 and 72, respectively. Similarly, the substrate 65 can also have circuit wiring 64,
The substrate 75 can have circuit wiring (not shown). During the bonding process, the dielectric 39 has a surface 52 on the dielectric 69.
And the surface 79 to the dielectric 79. Thus, by using the opposite upper and lower surfaces of the completed transfer member, it is possible to bond two circuit layers, or a circuit layer and a substrate before sintering, or two layers before sintering. Can be used.

[0057]

The conductive transfer structure of the present invention functions as an electrical connecting member. Various multilayer ceramics manufactured by bonding the transfer member to another substrate or layer, or another structure such as an electric device, and then sintering and sealing by having the configuration and shape described above. It can be used as a connection layer of a package. The present invention has the effect of reducing the gap at the interface between the via and the side wall of the insulator and realizing high-quality circuit connection.

[Brief description of drawings]

FIG. 1 shows a base having a conductive etch stop layer.

FIG. 2 is a view showing a base having a resist pattern on both sides.

FIG. 3 shows a partial etch of the base with an exposed etch stop layer on the side of the thin electrical conductor.

FIG. 4 is a view in which the resist is removed from the upper surface of the thin electric conductor.

FIG. 5 is a diagram in which a debonding substance is attached to an upper surface of a partially etched base.

FIG. 6 shows a carrier attached to a debonding material on a partially etched base.

FIG. 7 is a diagram in which the side of the thick electric conductor of the base is completely etched.

FIG. 8 is a view of removing the photoresist from the surface of the thick electric conductor.

FIG. 9 is a diagram in which the exposed etch stop layer is removed by etching.

FIG. 10 is a view of filling a region between thick electric conductors of the base with an inorganic insulating material.

FIG. 11 shows a transfer member bonded to a substrate or other layer.

FIG. 12 is a view in which the transfer member of the present invention is bonded to another structure.

FIG. 13 illustrates an example of a completed conductive transfer member having only through vias of the present invention.

FIG. 14 is a diagram in which the conductive transfer member of the present invention is bonded to a set of electric devices.

[Explanation of symbols]

5 base 13 first conductive material 15 second conductive material 11 third conductive material (etch /
Stop layer) 12 Stud cap 14 Circuit wiring 16, 21, 23, 33, 35 Opening 17, 19 Photoresist 25 Adhesive peeling substance 29 Carrier 31 Stud 39 Insulating substance (slurry)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H05K 3/46 H 6921-4E N 6921-4E // H01L 21/768 (72) Inventor John ・Acocera United States New York State Hope Well Junction Alpine Drive 5 (72) Inventor Lester Win Heron United States New York State Hope Well Junction Innsbruck Boulevard 12 (72) Inventor Mark Richard Codas United States New York State Presant Valley Earl 1 Bod Cus 313 (72) Inventor Lewis Harry Worts Highland Smith Terrace, New York, USA 17

Claims (9)

[Claims] 1. A first conductive island, a second conductive island, the first conductive island and the second conductive island.
At least one third conductive island disposed between the conductive islands of, and the material forming the third conductive island with respect to the material forming the first and second conductive islands. A conductive transfer member, which is a substance that serves as an etch stop, and in which at least part of the third conductive island and the first or second conductive island is surrounded by an inorganic insulating material. 2. The material forming the third conductive island is selected from the group comprising aluminum, chromium, copper, gold, molybdenum, nickel, palladium, platinum, silver, titanium, tungsten, or alloys thereof. The conductive transfer member according to claim 1. 3. The material forming the first conductive island and the second conductive island is aluminum.
The conductive transfer member according to claim 1, which is selected from the group including copper, gold, iron, molybdenum, nickel, tungsten, or alloys thereof. 4. The conductive transfer member of claim 1, wherein the inorganic insulating material is selected from the group including aluminum oxide, ceramics, or glass ceramics. 5. The first conductive island or the second conductive island forms a conductive wiring.
The electroconductive transfer member according to. 6. The conductive transfer member according to claim 1, wherein the first conductive island or the second conductive island forms a conductive stud. 7. The conductive transfer member according to claim 1, wherein the thickness of the first conductive island is different from the thickness of the second conductive island. 8. The conductive transfer member according to claim 1, wherein the thickness of the first conductive island is the same as the thickness of the second conductive island. 9. The first conductive island is a conductive stud cap and the second conductive island opposite the first conductive island is a conductive stud.
The conductive transfer member according to claim 1.