JPH073595B2 - Method for manufacturing electrophotographic photoreceptor - Google Patents
Method for manufacturing electrophotographic photoreceptorInfo
- Publication number
- JPH073595B2 JPH073595B2 JP4080687A JP4080687A JPH073595B2 JP H073595 B2 JPH073595 B2 JP H073595B2 JP 4080687 A JP4080687 A JP 4080687A JP 4080687 A JP4080687 A JP 4080687A JP H073595 B2 JPH073595 B2 JP H073595B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- photoconductor
- electrophotographic photoreceptor
- tellurium
- concentration distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、セレン・テルル系合金からなる感光層を導電
性基体上に有する電子写真用感光体の製造方法に関す
る。TECHNICAL FIELD The present invention relates to a method for producing an electrophotographic photoreceptor having a photosensitive layer made of a selenium-tellurium alloy on a conductive substrate.
機能分離型の多層構造感光層を有する電子写真用感光体
は、例えば第2図のような構造を有する。すなわち、ア
ルミニウム基体1の上に5.5%のTeを含むSe合金の蒸着
により50〜55μmの厚さに形成される電荷輸送層2、さ
らにその上に12〜13%のTeを含むSe合金の蒸着により4
〜5μmの厚さに形成される電荷発生層3が積層されて
いる。このような感光体は、第3図に示すように、真空
槽4の中において、回転する支持軸上に装着されたアル
ミニウム素管1の下にそれぞれヒータ7を備えた二つの
蒸発源5,6を配置した装置を用いて製造される。蒸発源
5の中に5.5%Te−Se合金,蒸発源6の中に12〜13%Te
−Se合金をそれぞれ収容し、最初は蒸発源5の加熱によ
り電荷輸送層2を、次いで蒸発源6の加熱により電荷発
生層3を順次蒸着する。An electrophotographic photosensitive member having a function-separated multilayer photosensitive layer has a structure as shown in FIG. 2, for example. That is, a charge transport layer 2 formed to a thickness of 50 to 55 μm by vapor deposition of a Se alloy containing 5.5% Te on an aluminum substrate 1, and a vapor deposition of a Se alloy containing 12 to 13% Te thereon. By 4
The charge generation layer 3 having a thickness of ˜5 μm is laminated. As shown in FIG. 3, such a photosensitive member includes two evaporation sources 5, each having a heater 7 under a aluminum tube 1 mounted on a rotating support shaft in a vacuum chamber 4. Manufactured using a 6-position machine. The evaporation source 5 contains 5.5% Te-Se alloy and the evaporation source 6 contains 12 to 13% Te.
Each containing —Se alloy, the charge transport layer 2 is first vaporized by heating the evaporation source 5, and then the charge generation layer 3 is sequentially vaporized by heating the evaporation source 6.
しかし、このような方法で蒸着を行う場合,第一成分の
セレンと第二成分のテルルの分留がはなはだしく、第4
図に示すような目標のTe濃度分布に対し、実際のTe濃度
分布は第5図のようになり、しかも濃度分布の状態が一
定にならないため特性にばらつきが生じ、特に分留が激
しくなって濃度分布が第6図のように電荷発生層3の電
荷輸送層2側にピークを示すときには、疲労特性が悪く
なり、繰り返しコピー時の残留電位上昇が大きく、感光
体特性に致命的な影響を与える。However, when vapor deposition is performed by such a method, the fractional distillation of selenium as the first component and tellurium as the second component is not sufficient,
Compared to the target Te concentration distribution shown in the figure, the actual Te concentration distribution is as shown in Fig. 5. Moreover, since the state of the concentration distribution is not constant, the characteristics vary and the fractionation becomes particularly violent. When the concentration distribution has a peak on the charge transport layer 2 side of the charge generation layer 3 as shown in FIG. 6, the fatigue characteristics are poor and the residual potential rises significantly during repeated copying, which is fatal to the photoreceptor characteristics. give.
本発明の目的は、上述の問題を解決し、セレン・テルル
合金材料の蒸着時のセレンとテルルの分留を抑制し、分
留に起因する特性のばらつきがなく、疲労特性の向上し
た電子写真用感光体の製造方法を提供することにある。The object of the present invention is to solve the above problems, suppress the fractional distillation of selenium and tellurium during the vapor deposition of selenium-tellurium alloy material, there is no variation in characteristics due to fractional distillation, electrophotography with improved fatigue characteristics It is to provide a method of manufacturing a photoconductor for use.
本発明は、分留が蒸着材料に非晶質合金を用いるときに
生じ、結晶合金を用いるときには生じないという認識に
基づき、蒸発源に結晶セレン・テルル合金を収容し、加
熱して導電性基体上に感光層を蒸着するものとする。The present invention is based on the recognition that fractional distillation occurs when an amorphous alloy is used as a vapor deposition material and does not occur when a crystalline alloy is used. A photosensitive layer shall be deposited on top.
結晶材料は、材料の内部において、Se原子とTe原子との
結合状態が均一であるため、蒸発源の加熱により常にSe
とTeが一定比率で蒸発する。このため第5図,第6図に
示すような濃度分布異常が生ずることがない。In the crystalline material, since the bonding state of Se atoms and Te atoms is uniform inside the material, the Se source is always heated by heating the evaporation source.
And Te evaporate at a constant rate. Therefore, the abnormal concentration distribution as shown in FIGS. 5 and 6 does not occur.
第2図に示した構造を持つ感光体製造のために、第3図
の蒸発源5,6に入れる5.5%Te−Se合金および12〜13%Te
−Se合金合金は予め30℃以上の環境に1時間以上放置す
る加熱処理により結晶化させた材料を用いる。この結
果、Te濃度分布は常に第1図に示すようになり、分留が
ないといってよいほど水平に近い分布を示し、これに伴
って感光体特性のばらつきが少なくなった。また繰り返
しコピー時の残留電位上昇異常を防ぐことができ、第1
表に従来の方法で製造した感光体と比較して示すよう
に、300サイクル繰り返しコピー後の帯電低下量が小さ
くなり、またそのばらつきも少なくなった。In order to manufacture the photoreceptor having the structure shown in FIG. 2, 5.5% Te-Se alloy and 12 to 13% Te contained in the evaporation sources 5 and 6 of FIG.
-Se alloy For the alloy, use a material that has been crystallized by heat treatment that is left in the environment of 30 ° C or higher for 1 hour or longer. As a result, the Te concentration distribution was always as shown in FIG. 1, showing a distribution that was almost horizontal so that it could be said that there was no fractional distillation, and the variation in the photoreceptor characteristics was reduced accordingly. In addition, it is possible to prevent abnormal residual potential increase during repeated copying.
As shown in the table in comparison with the photoconductor manufactured by the conventional method, the amount of reduction in charge after repeating 300 cycles was small, and the variation was also small.
なお、本発明に基づき用いる蒸着材料としては、溶融合
金化後徐冷することにより凝固時に結晶化した材料を用
いてもよい。また、完全に結晶化した材料でなく、亜結
晶状態である材料でも有効である。 As the vapor deposition material used according to the present invention, a material that is crystallized during solidification by gradually cooling after melt alloying may be used. Further, a material in a sub-crystalline state is also effective, not a completely crystallized material.
本発明によれば、蒸着材料として非晶質合金を加熱処理
することなどにより結晶化したセレン・テルル系合金を
用いて真空蒸着することにより、分留が防止され、テル
ルの濃度分布が一様になり、濃度分布のばらつきにより
る感光体の光感度異常がなくなる。また、濃度の制御が
容易で感光体特性のばらつきが少なく、残留電位上昇異
常が防止でき、繰り返しコピー時おける帯電低下量を小
さくして、画像における濃度低下を少なくすることがで
きる。According to the present invention, fractional distillation is prevented and uniform concentration distribution of tellurium is achieved by vacuum vapor deposition using a selenium-tellurium alloy crystallized by heat treatment of an amorphous alloy as a vapor deposition material. Therefore, the photosensitivity abnormality of the photoconductor due to the variation of the density distribution is eliminated. Further, it is possible to easily control the density, reduce variations in the characteristics of the photoconductor, prevent abnormalities in residual potential increase, reduce the amount of charge decrease during repeated copying, and reduce the decrease in image density.
第1図は本発明の一実施例による感光体のTe濃度分布線
図、第2図は第1図の感光体の構造を示す断面図、第3
図は本発明の一実施例に用いられる真空蒸着装置の断面
図、第4図は第1図の感光体の目標濃度分布線図、第5
図,第6図は従来の方法による感光体のTe濃度分布線図
である。 1:Al基体、2:電荷輸送層、3:電荷発生層。FIG. 1 is a Te concentration distribution diagram of a photoconductor according to one embodiment of the present invention, FIG. 2 is a sectional view showing the structure of the photoconductor of FIG. 1, and FIG.
FIG. 4 is a sectional view of a vacuum vapor deposition apparatus used in one embodiment of the present invention, FIG. 4 is a target concentration distribution diagram of the photoconductor of FIG. 1, and FIG.
FIG. 6 and FIG. 6 are Te concentration distribution diagrams of the photoconductor according to the conventional method. 1: Al substrate, 2: charge transport layer, 3: charge generation layer.
Claims (3)
し、加熱して導電性基体上に感光体層を蒸着することを
特徴とする電子写真用感光体の製造方法。1. A method for producing a photoconductor for electrophotography, characterized in that a crystalline selenium-tellurium alloy is contained in an evaporation source and heated to deposit a photoconductor layer on a conductive substrate.
て、結晶セレン・テルル合金が非晶質合金を加熱処理し
て結晶化した材料であることを特徴とする電子写真用感
光体の製造方法。2. A method according to claim 1, wherein the crystalline selenium-tellurium alloy is a material obtained by crystallizing an amorphous alloy by heat treatment. Method.
て、結晶セレン・テルル合金が溶融合金化後徐冷して凝
固時に結晶化した材料であることを特徴とする電子写真
用感光体の製造方法。3. The electrophotographic photoreceptor according to claim 1, wherein the crystalline selenium-tellurium alloy is a material which is crystallized during solidification by slow cooling after melt alloying. Production method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4080687A JPH073595B2 (en) | 1987-02-24 | 1987-02-24 | Method for manufacturing electrophotographic photoreceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4080687A JPH073595B2 (en) | 1987-02-24 | 1987-02-24 | Method for manufacturing electrophotographic photoreceptor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63206759A JPS63206759A (en) | 1988-08-26 |
JPH073595B2 true JPH073595B2 (en) | 1995-01-18 |
Family
ID=12590883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4080687A Expired - Lifetime JPH073595B2 (en) | 1987-02-24 | 1987-02-24 | Method for manufacturing electrophotographic photoreceptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH073595B2 (en) |
-
1987
- 1987-02-24 JP JP4080687A patent/JPH073595B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63206759A (en) | 1988-08-26 |
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