JPH07326866A - Dielectric board module - Google Patents

Abstract

PURPOSE:To provide a dielectric board module which is high enough in heat dissipating properties and strength. CONSTITUTION:A dielectric board module 100 is formed through such a manner that dielectric board layers 1, 3, 5, and 7 and GND layers 2, 4, and 6 are laminated, wiring patterns 1i, 3i, and 5i are buried in the dielectric board layers 1, 3, and 5, a wiring pattern 1s is formed on the surface of the dielectric board layer 1, an active device chip 8 is mounted thereon, and two heat transfer members 9 extending from the active device chip 8 to the GND layer 2 are buried in the dielectric board layer 1. Heat released from the active device chip 8 is transmitted to the GND layer 2 through the intermediary of the heat transfer members 9, then transferred to the dielectric board 1 from the GND layer 2, and then dissipated into the air from the dielectric board 1. By this setup, a dielectric board module of this constitution is enhanced enough in heat dissipation capacity, so that an active device can be prevented from deteriorating in characteristics. No holes are bored in a dielectric board, so that the board is kept high in mechanical strength.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric substrate module, and more particularly to a dielectric substrate module improved so that heat of an active element chip mounted on the surface of a dielectric substrate can be sufficiently dissipated.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view showing an example of a conventional dielectric substrate module. This dielectric substrate module 400 includes a dielectric substrate 1, 3, 5, 7 and a GND layer 2,
4 and 6 are laminated, the wiring patterns 1i, 3i and 5i are embedded in the dielectric substrate layers 1, 3 and 5, and the wiring pattern 1s is formed on the surface of the dielectric substrate layer 1 and the active element is formed. This is a structure in which the chip 8 is mounted. The dielectric substrates 1, 3, 5, 7 are ceramics. The GND layers 2, 4, 6 and the wiring patterns 1i, 3i, 5i, 1s
Is a copper foil. The active element chip 8 is a bare chip of FET (field effect transistor) or MMIC (monolithic microwave integrated circuit).

FIG. 5 is a sectional view showing another example of a conventional dielectric substrate module. This dielectric substrate module 500 is a stack of dielectric substrates 1, 3, 5, 7 and GND layers 2, 4, 6, and wiring patterns 1i, 3i, in the dielectric substrate layers 1, 3, 5 are laminated. 5i is buried and a wiring pattern 1s is formed on the surface of the dielectric substrate layer 1,
The heat dissipation block mounting hole 50 is provided, the heat dissipation block 60 is fitted into the heat dissipation block mounting hole 50, and the heat dissipation block 60 is mounted on the dielectric substrate 7, and the active element chip 8 is mounted on the heat dissipation block 60. The heat dissipation block 60 is aluminum.

[0004]

In the above-mentioned conventional dielectric substrate module 400, the heat generated in the active element chip 8 is directly dissipated in the air, and at the same time it is transmitted to the dielectric substrate layer 1 and then indirectly. Is dissipated into the air. However, since the dielectric substrate 1 has low thermal conductivity, there is a problem that the heat of the active element chip 8 cannot be sufficiently dissipated. On the other hand, in the above-mentioned conventional dielectric substrate module 500, the heat generated in the active element chip 8 is directly dissipated in the air, and is also indirectly dissipated in the air after being transmitted to the heat dissipation block 60. Since the heat dissipation block 60 has high thermal conductivity, the heat of the active element chip 8 can be sufficiently dissipated. However, since the heat dissipation block mounting hole 50 is formed, there is a problem in that the strength of the substrate is reduced. Therefore, an object of the present invention is to provide a dielectric substrate module improved so that heat can be sufficiently dissipated and the strength of the substrate is not lowered.

[0005]

A dielectric substrate module according to the present invention is a dielectric substrate module in which an active element chip is mounted on the surface of a dielectric substrate, and a heat dissipation layer made of a metal material is embedded in the dielectric substrate. A structural feature is that a plurality of heat transfer members made of a metal material for guiding the heat of the active element chip to the heat dissipation layer are embedded in a dielectric substrate. In the dielectric substrate module having the above structure, it is preferable that the dielectric substrates are laminated in multiple layers, the heat dissipation layer is provided on two or more dielectric substrates, and the heat transfer member is penetrated through these heat dissipation layers.

[0006]

In the dielectric substrate module of the present invention, the heat generated in the active element chip is directly dissipated in the air and is also transmitted to the heat dissipation layer through the plurality of heat transfer members, and the heat dissipation layer causes the heat to be generated. It is transmitted to the body substrate and indirectly diffused into the air from the dielectric substrate. Although the effective heat transfer area from the active element chip to the dielectric substrate is limited to the bottom area of the active element chip 8 in the conventional example of FIG. 4, in the dielectric substrate module of the present invention, it is arbitrarily expanded depending on the area of the heat dissipation layer. To be done.
Therefore, heat can be sufficiently dissipated. Further, since the heat dissipation layer is embedded in the dielectric substrate, the problem of lowering the substrate strength does not occur. The plurality of heat transfer members is provided to ensure contact for heat transfer and to increase the heat transfer cross-sectional area. If the heat dissipation layer is provided on two or more dielectric substrates, the area of the heat dissipation layer can be easily expanded.

[0007]

The present invention will be described in more detail with reference to the embodiments shown in the drawings. The present invention is not limited to this.

[First Embodiment] FIG. 1 is a sectional view of a dielectric substrate module according to a first embodiment of the present invention. This dielectric substrate module 100 is
The dielectric substrates 1, 3, 5, 7 and the GND layers 2, 4, 6 are laminated, and the wiring patterns 1i ′, 3i, 5i are embedded in the dielectric substrate layers 1, 3, 5 and at the same time, The wiring pattern 1s is formed on the surface of the dielectric substrate layer 1 and the active element chip 8 is mounted, and further two heat transfer members 9 from the active element chip 8 to the GND layer 2 are provided in the dielectric substrate layer 1. It is a structure with embedded.

The dielectric substrates 1, 3, 5, 7 are ceramics. The GND layers 2, 4, 6 and the wiring patterns 1i ', 3i, 5i, 1s are copper foils. The GN
The D layer 2 functions as a heat dissipation layer as described later. The wiring pattern 1i ′ is not provided below the active element chip 8 in order to avoid interference with the heat transfer member 9.
The active element chip 8 is a bare chip of FET (field effect transistor) or MMIC (monolithic microwave integrated circuit). The heat transfer member 9 is
It is a solid copper pillar with a diameter of 0.2 mm. In order to ensure heat transfer from the active element chip 8 to the GND layer 2 and to increase the overall cross-sectional area, the number of the heat transfer members 9 is two. It is preferable that the heat transfer member has a sectional area of 0.06 mm 2 or more as a whole. The heat transfer member 9 may be a solid copper pillar extending from the active element chip 8 to the GND layer 2 in the completed state of the dielectric substrate module 100. It is not necessary to use solid copper pillars.

FIG. 2 shows the dielectric substrate module 100.
It is a partially broken perspective view of FIG. The two heat transfer members 9 penetrate the dielectric substrate 1 and are connected to the active element chip 8 to the GND.
It has reached layer 2.

According to the above dielectric substrate module 100, the heat generated in the active element chip 8 is directly dissipated in the air, and the heat is transmitted through the two heat transfer members 9 to GND.
It is transmitted to the layer 2, is transmitted from the GND layer 2 to the dielectric substrate 1, and is indirectly diffused into the air from the dielectric substrate 1. The effective heat transfer area from the active element chip 8 to the dielectric substrate 1 is expanded by the area of the GND layer 2 so that heat can be sufficiently dissipated. Further, since no holes are formed in the dielectric substrates 1, 3, 5 and 7, the strength of the substrate does not decrease.

-Second Embodiment- FIG. 3 is a sectional view of a dielectric substrate module according to a second embodiment of the present invention. This dielectric substrate module 200 is
The dielectric substrates 1, 3, 5, 7 and the GND layers 2, 4, 6 are laminated, and the wiring patterns 1i ′, 3i ′, 5i ′ and the heat dissipation layer 10 are provided in the dielectric substrate layers 1, 3, 5. Embedded therein, the wiring pattern 1s is formed on the surface of the dielectric substrate layer 1 and the active element chip 8 is mounted, and further, the active element chip 8 to the GND layer 6 are provided in the dielectric substrate layer 2 This is a structure in which a book heat transfer member 9 is embedded.

The dielectric substrates 1, 3, 5, 7 are ceramics. The GND layers 2, 4, 6 and the wiring patterns 1i ′, 3i ′, 5i ′, 1s and the heat dissipation layer 10 are
It is copper foil. The GND layers 2, 4, 6 also function as heat dissipation layers, as described later. The wiring pattern 1
Since i ', 3i' and 5i 'are provided with the heat dissipation layer 10, they are not provided under the active element chip 8. The active element chip 8 includes an FET (field effect transistor) and an M
It is a bear chip of MIC (monolithic microwave integrated circuit). The heat transfer member 9 has a diameter of 0.
It is a solid copper pillar of 2 mm. Active element chip 8 to GND
In order to ensure heat transfer to the layers 2, 4, 6 and the heat dissipation layer 10 and to increase the cross-sectional area as a whole, the number of the heat transfer members 9 is two. It is preferable that the heat dissipation layer 10 has a sectional area of 0.06 square mm or more as a whole of the heat transfer member. It should be noted that the heat transfer member 9 is disposed from the active element chip 8 to the GN when the dielectric substrate module 100 is completed.
The solid copper pillar extending to the D layer 2 is actually the solid copper pillar from the active element chip 8 to the heat dissipation layer 10 of the dielectric substrate 1, and the heat dissipation layer 10 of the dielectric substrate 1 to the GND layer 2 Solid copper pillars up to and including the solid copper pillars from the GND layer 2 to the heat dissipation layer 10 of the dielectric substrate 3 and down to the heat dissipation layer 10 of the dielectric substrate 3 to GND
Solid copper pillars up to layer 4, solid copper pillars from GND layer 4 to heat dissipation layer 10 of dielectric substrate 5, and heat dissipation layer 1 of dielectric substrate 5
It consists of solid copper columns from 0 to GND layer 6. That is, the GND layers 2, 4, 6 and the heat dissipation layer 10 also function as lands that connect the individual solid copper pillars.

According to the above-mentioned dielectric substrate module 200, the heat generated in the active element chip 8 is directly dissipated in the air and the GND is transmitted via the two heat transfer members 9.
It is transmitted to the layers 2, 4, 6 and the heat dissipation layer 10, and the dielectric layers 1, 3, 6 are transmitted from the GND layers 2, 4, 6 and the heat dissipation layer 10.
5 and 7, and is indirectly diffused into the air from the dielectric substrates 1, 3, 5, and 7. The effective heat transfer area from the active element chip 8 to the dielectric substrates 1, 3, 5, 7 is expanded by the areas of the GND layers 2, 4, 6 and the heat dissipation layer 10,
You will be able to radiate heat sufficiently. In addition, the dielectric substrate 1,
Since no holes are formed in 3, 5, and 7, the strength of the substrate does not decrease.

[0015]

According to the dielectric substrate module of the present invention, the heat generated in the active element chip is transmitted to the heat dissipation layer by the plurality of heat transfer members, and is transmitted to the dielectric substrate from the heat dissipation layer to be dissipated sufficiently. Will be able to radiate heat. As a result, the characteristic deterioration of the active element due to heat can be prevented. Moreover, since no holes are formed in the dielectric substrate, the substrate strength does not decrease.

[Brief description of drawings]

FIG. 1 is a sectional view of a dielectric substrate module according to a first embodiment of the present invention.

FIG. 2 is a partially cutaway perspective view of the dielectric substrate module of FIG.

FIG. 3 is a sectional view of a dielectric substrate module according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing an example of a conventional dielectric substrate module.

FIG. 5 is a sectional view showing another example of a conventional dielectric substrate module.

[Explanation of symbols]

100,200,400,500 Dielectric substrate module 1,3,5,7 Dielectric substrate 2,4,6 GND layer 8 Active element chip 9 Heat transfer member 1s, 1i, 3i, 5i Wiring pattern 1i ', 3i' , 5i 'Wiring pattern 50 Heat dissipation block mounting hole 60 Heat dissipation block

Claims (2)

[Claims] 1. A dielectric substrate module in which an active element chip is mounted on a surface of a dielectric substrate, wherein a heat dissipation layer of a metal material is embedded in the dielectric substrate, and heat of the active element chip is guided to the heat dissipation layer. A dielectric substrate module having a structural feature in which a plurality of heat transfer members made of a metal material are embedded in a dielectric substrate. 2. The dielectric substrate module according to claim 1, wherein the dielectric substrates are laminated in multiple layers, the heat dissipation layers are provided on two or more dielectric substrates, and the heat transfer members are penetrated through these heat dissipation layers. A dielectric substrate module characterized by the above.