JPH07326695A - Semiconductor device - Google Patents

Abstract

PURPOSE:To more efficiently cool a semiconductor substrate. CONSTITUTION:A heat conducting body 21 is composed of such a metal as copper, and conducts the heat from an upper metallic body 5 to a heat sink 13. Therefore, the heat loss conducted to a metallic electrode 3 which is in contact with a semiconductor substrate is nearly evenly dispersed to both the upper metallic body 5 and a lower metallic body 6 without bias, because the heat loss is conducted to the heat sink 13 not only from the lower metallic body 6, but also from the upper metallic body 5. Consequently, the cooling efficiency of the semiconductor substrate is remarkably improved and, at the same time, the temperature distribution in the direction along the main surface of the semiconductor substrate is uniformized. Accordingly, a small-sized semiconductor element which can handle a large current and have excellent characteristics can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device particularly suitable for high power and a composite semiconductor device including a plurality of such semiconductor devices, and more particularly to improvement of heat dissipation efficiency thereof.

[0002]

2. Description of the Related Art In recent years, semiconductor devices for large power consumption, such as diodes with large current capacity and thyristors, which have large heat loss, have been introduced in recent years having a structure in which a semiconductor substrate is housed in a metal case while maintaining electrical insulation. . This type of semiconductor device has an advantage that the heat loss generated in the semiconductor substrate can be easily dissipated to the outside by attaching the radiator to the metal case.

FIG. 8 is a side sectional view of a device disclosed in Japanese Patent Publication No. 63-34625, which is an example of this type of semiconductor device. 9 is a cross sectional view of the semiconductor device shown in FIG.
It is a front sectional view along the A section line. This semiconductor device 1
Reference numeral 00 denotes a diode with a large current capacity, which has a structure in which a semiconductor substrate 1 which constitutes a diode element and metal electrodes 3 and 2 which are in pressure contact with both main surfaces thereof are housed in a metal block 4. A fin-shaped radiator 13 for dissipating the heat loss generated in the semiconductor substrate 1 to the atmosphere is attached to the bottom surface of the metal block 4.

The semiconductor substrate 1 has a disk shape, and the metal electrodes 2 and 3 pressed against the disk are formed in a substantially columnar shape, and terminals 2a and 3a are provided on the tops of the side surfaces thereof, respectively.
Are attached integrally. An anode electrode is formed on one main surface of the semiconductor substrate 1, and a cathode electrode is formed on the other main surface. And the metal electrode 2
Is in electrical contact with the anode electrode, and the metal electrode 3 is in contact with the cathode electrode. The metal block 4 includes an upper metal body 5 and a lower metal body 6 each having a recess having a semicircular cross section.
Are fastened to each other so that the respective concave portions face each other. The semiconductor substrate 1 and the metal electrodes 2 and 3 are housed in a hollow portion having a circular cross section formed by these recesses.

The metal electrodes 2, 3 and the upper metal body 5,
Insulators 7 and 8 are interposed between the lower metal body 6 and the lower metal body 6. Insulator 7 made of electrically insulating sheet resin
Are arranged so as to surround the side surfaces of the metal electrodes 2 and 3, so that the side surfaces are electrically insulated from the inner wall surfaces of the recesses in the upper metal body 5 and the lower metal body 6. On the other hand, the insulator 8 made of electrically insulating cylindrical resin is
It is installed so as to surround the side surfaces of the terminals 2a and 3a, and electrically insulates these side surfaces from the upper metal body 5.

The openings at both ends of the metal block 4 are closed by support plates 9. The supporting plate 9 is fixed to the metal block 4 by fitting a flange portion provided on the outer peripheral portion thereof into the inner peripheral groove 10 of each of the upper metal body 5 and the lower metal body 6. A disc spring 11 for pressing the metal electrodes 2, 3 toward the semiconductor substrate 1 is interposed between the support plate 9 and the metal electrodes 2, 3. Further, the disc spring 11 and the metal electrodes 2, 3
An insulator 12 made of an electrically insulating plate-shaped resin is interposed between and. The magnitude of the elastic force of the disc spring 11 is such that the metal electrodes 2 and 3 have a prescribed pressure and the semiconductor substrate 1
Is set to press.

The radiator 13 is fixed to the metal block 4 in close contact with the lower surface 6a of the lower metal body 6.

The semiconductor device 100 configured as described above.
Then, a forward current flows from the terminal 2a to the terminal 3a, and the diode operates as a diode that blocks a reverse current. That is, the forward current supplied by the external device enters from the terminal 2a, flows from the metal electrode 2 to the semiconductor substrate 1 and the metal electrode 3, and further exits from the terminal 3a. Heat loss is generated in the semiconductor substrate 1 as the forward current flows.

This heat loss is transmitted to the metal electrodes 2 and 3 through the contact surfaces as shown by the arrows in FIGS. 8 and 9, and further passes through the insulator 7 to the upper metal body 5 and the lower metal body 6. To be told. Then, the heat is transmitted from the lower metal body 6 to the radiator 13 and further dissipated from the outer surface of the radiator 13 into the atmosphere. In this way, the heat loss generated in the semiconductor substrate 1 is conducted through each part of the device and finally dissipated from the radiator 13 into the atmosphere, whereby the semiconductor substrate 1 is cooled.

[0010]

However, the conventional semiconductor device 100 configured as described above has a problem that the cooling efficiency of the semiconductor substrate 1 is insufficient. That is, in the path through which the heat loss generated in the semiconductor substrate 1 is transmitted to the radiator 13, heat conduction from the lower metal body 6 to the radiator 13 is sufficiently efficient, while the heat conduction from the upper metal body 5 is performed. The heat conduction to the radiator 13 was not performed efficiently. This is because, unlike the lower metal body 6, the upper metal body 5 is not in contact with the radiator 13.

Since the upper metal body 5 and the radiator 13 are not in contact with each other, the heat loss transferred to the upper metal body 5 is temporarily
It is inevitably transmitted to the lower metal body 6 and then to the radiator 13 through the lower metal body 6. In addition, a gap 14 having a width of about 0.2 mm to 0.5 mm is unavoidably present on the mating surface of the upper metal body 5 and the lower metal body 6 due to restrictions in the manufacturing process of the semiconductor device 100. The heat transfer from 5 to the lower metal body 6 is not good.

FIG. 10 shows an assembly process of the semiconductor device 100. As shown in the process diagram of FIG. 10, in order to store the metal electrodes 2 and 3 in the metal block 4, a sheet-shaped insulator 7 is laid in the recess of the lower metal body 6, and the metal electrode 2 and
Insert 3. After that, with the insulator 7 wound around the side surfaces of the metal electrodes 2 and 3, the upper metal body 5 is lowered from above,
The upper metal body 5 and the lower metal body 6 are fastened. At this time, the dimensions of the upper metal body 5 and the lower metal body 6 are set in advance so that a certain gap remains between the upper metal body 5 and the lower metal body 6.

That is, the upper metal body 5 and the lower metal body 6
Are fastened to each other while pressing the metal electrodes 2 and 3. As a result, the metal electrodes 2 and 3 and the upper metal body 5 are
Good thermal conductivity between the and lower metal body 6 is ensured. The gap 14 thus formed is filled with a filler such as silicone rubber for the purpose of preventing moisture or the like from entering the inside.

If the upper metal body 5 and the lower metal body 6 are fastened so as to abut each other without leaving the gap 14, the concave portions of the upper metal body 5 and the lower metal body 6 and the metal electrodes 2, 3 are formed. Due to a slight dimensional error between the metal electrodes 2 and 3 and the upper metal body 5 and the lower metal body 6, the contact between the metal electrodes 2 and 3 becomes poor. That is, good thermal conductivity between them is not guaranteed. As described above, the gap 14 is an essential element in the semiconductor device 100.

Therefore, as shown by the arrows in FIGS. 8 and 9, the flow of loss heat is not uniform in the metal electrodes 2 and 3, but is biased toward the lower metal body 6. Therefore, in the semiconductor device 100, the cooling efficiency of the semiconductor substrate 1 was not sufficiently obtained. If the semiconductor substrate 1 is not cooled sufficiently, the temperature of the semiconductor substrate 1 will rise excessively. When the temperature exceeds the allowable temperature peculiar to the joint portion of the semiconductor substrate 1, the semiconductor substrate 1 may not operate normally and may be permanently unusable.

In order to prevent such malfunctions and damages in the semiconductor device 100, it is necessary to increase the outer dimensions of the semiconductor device 100 with respect to a predetermined current rating. Alternatively, it is necessary to keep the current rating of the semiconductor device 100 low for a given external dimension.

The present invention has been made in order to solve the above-mentioned problems in the conventional device, and by increasing the cooling efficiency, a small semiconductor device capable of handling a large current, and a plurality of such semiconductor devices. It is an object of the present invention to provide a composite semiconductor device including a plurality of semiconductor devices.

[0018]

According to a first aspect of the present invention, there is provided a semiconductor device in which end faces of two main electrodes are arranged so as to sandwich both main faces of a semiconductor substrate on which a semiconductor element is formed. Pressed against one and the other of both main surfaces,
The semiconductor substrate and the two main electrodes are housed in a hollow portion formed by assembling the first and second heat radiating blocks having the recesses so that the recesses face each other. Moreover, the first and second heat radiating blocks are in pressure contact with the side faces of the two main electrodes so as to sandwich the side faces of the two main electrodes from opposite sides via an electric insulator, and from the first heat radiating block, In a semiconductor device in which a terminal electrically connected to each main electrode is exposed and a heat radiating means for radiating heat to the outside is attached to the second heat radiating block, the first heat radiating block and the heat radiating means are provided. And heat transfer means for transmitting heat from the first heat dissipation block to the heat dissipation means.

In a semiconductor device according to a second aspect of the present invention, the end faces of the two main electrodes are arranged so as to sandwich one of the two main surfaces of the semiconductor substrate on which the semiconductor element is formed. The semiconductor substrate and the two pieces are provided in a hollow portion formed by assembling the first and second heat dissipation blocks, each of which is in pressure contact with the other and in which a recess is formed, so that the recesses face each other. The main electrodes are housed, and the first and second heat dissipation blocks are pressed against the side surfaces of the two main electrodes so as to sandwich the side surfaces of the two main electrodes from opposite sides via an electric insulator. In the semiconductor device in which terminals electrically connected to the respective main electrodes are exposed from the first heat dissipation block, and heat dissipation means for dissipating heat to the outside is attached to the second heat dissipation block. The said first heat sink block second
It is characterized in that heat transfer means is provided which is coupled to the heat dissipation block and transfers heat from the first heat dissipation block to the second heat dissipation block.

A semiconductor device according to a third aspect of the present invention is the semiconductor device according to the first or second aspect, wherein the heat transfer means is a plate-shaped heat conductor substantially made of metal. It is characterized by

According to a fourth aspect of the present invention, there is provided the semiconductor device according to the first or second aspect, wherein the heat transfer means comprises a heat pipe.

A composite semiconductor device according to a fifth aspect of the present invention includes a plurality of semiconductor devices according to any one of the first to fourth aspects, and the heat radiation means is provided between these semiconductor devices. It is common, and moreover,
It is characterized in that the heat radiation means comprises a heat pipe.

[0023]

[Action]

<Operation of the Invention According to Claim 1> In the semiconductor device of the present invention, the heat loss generated in the semiconductor substrate or the like is transmitted from the two main electrodes to the first and second heat dissipation blocks through the electrical insulator. . Then, the heat loss transmitted to the second heat dissipation block is transmitted to the heat dissipation means and further dissipated to the outside through the heat dissipation means. At the same time, the heat loss transferred to the first heat dissipation block is transferred to the heat dissipation means through the heat transfer means and is dissipated to the outside.

That is, in this semiconductor device, since the heat transfer means is provided, the heat loss transferred to the first heat dissipation block is efficiently transferred to the heat dissipation means in the same manner as the heat loss transferred to the second heat dissipation block. It is dissipated to the outside through the heat dissipation means. Therefore, the heat loss disperses and flows in the two main electrodes toward both the first heat dissipation block and the second heat dissipation block substantially evenly and evenly.

<Operation of the Invention According to Claim 2> In the semiconductor device of the present invention, the heat loss generated in the semiconductor substrate or the like is passed from the two main electrodes to the first and second heat dissipation blocks through the electrical insulator. Is transmitted. Then, the heat loss transmitted to the second heat dissipation block is transmitted to the heat dissipation means and further dissipated to the outside through the heat dissipation means. At the same time, the heat loss transferred to the first heat dissipation block is once transferred to the second heat dissipation block through the heat transfer means, further transferred from the second heat dissipation block to the heat dissipation means, and dissipated to the outside.

That is, in this semiconductor device, since the heat transfer means is provided, the heat loss transferred to the first heat dissipation block is also transferred to the heat dissipation means through the second heat dissipation block and is dissipated to the outside through the heat dissipation means. For this reason, the heat loss in the two main electrodes disperses and flows not only toward the second heat dissipation block but also a considerable portion toward the first heat dissipation block.

<Operation of the Invention of Claim 3> In the semiconductor device of the present invention, since the heat transfer means is a heat conductor substantially made of metal, the heat of the first heat radiation block is radiated by heat conduction. Or it is transmitted to the second heat dissipation block. Further, since the heat transfer means is substantially made of metal and has a plate shape, the heat transfer means can be easily obtained at low cost.

<Operation of the Invention According to Claim 4> In the semiconductor device of the present invention, since the heat transfer means includes the heat pipe, a large amount of heat in the first heat dissipation block is efficiently transferred to the heat dissipation means or the second heat dissipation block. Well communicated.

<Operation of the Invention According to Claim 5> In the composite semiconductor device of the present invention, since the heat dissipation means is shared by the plurality of semiconductor devices, a composite semiconductor device having a plurality of semiconductor devices can be easily provided. Composed. Moreover, since the heat radiating means includes the heat pipe, a large amount of heat loss transferred from the plurality of semiconductor devices to the heat radiating means is efficiently dissipated to the outside.

[0030]

【Example】

<1. First Embodiment> First, a semiconductor device of the first embodiment will be described. FIG. 1 is a side sectional view of the semiconductor device of this embodiment. 2 is a front sectional view of the semiconductor device shown in FIG. 1 taken along the line BB. 3 is a partially cutaway perspective view of the same semiconductor device.
In the following figures, the same parts as those of the conventional semiconductor device 100 shown in FIGS. 8 to 10 are designated by the same reference numerals, and detailed description thereof will be omitted.

This semiconductor device 101 is a semiconductor device 10.
Like 0, it is a diode with a large current capacity. In the semiconductor device 101, as shown in FIGS.
The semiconductor device 100 is characteristically different in that the heat transfer body 21 is installed on the outer surface of the. This heat transfer body 21
It is a plate having an L-shaped cross section, and is a heat conductor composed of a metal having good heat conductivity such as copper or aluminum.

The heat transfer body 21 has its upper side surface fastened to the side surface of the upper metal body 5 with screws 23, and its bottom surface fastened to the upper end surface of the radiator 13 with screws 23 as well. As a result, the heat transfer body 21 is in pressure contact with both the upper metal body 5 and the radiator 13. Further, as shown in FIG. 3, the heat transfer body 21 may be fastened not only to the upper metal body 5 but also to the lower metal body 6.

The metal electrodes 2 and 3 are preferably aluminum, which has both good electrical conductivity and good thermal conductivity.
Or composed of copper. The upper metal body 5 and the lower metal body 6 are preferably made of aluminum having good thermal conductivity. Further, the insulator 7 is preferably made of a silicone rubber having excellent electrical insulation and heat resistance as well as good thermal conductivity.

Further, as shown in FIG. 3, the upper metal body 5 and the lower metal body 6 are fastened to each other by bolts (screws) 26. Therefore, the thermal contact between the metal electrodes 2, 3 and the upper metal body 5 and the lower metal body 6 is well ensured. Moreover, a notch 27 is formed on the upper side surface of the upper metal body 5, and the head of the bolt 26 is housed in this portion. Therefore, the head of the bolt 26 does not interfere with the heat transfer body 21.

Since the semiconductor device 101 is constructed as described above, like the conventional semiconductor device 100, the terminal 2a is formed.
A forward current flows from the terminal to the terminal 3a and operates as a diode that blocks a reverse current. On the other hand, the semiconductor device 1
The thermal behavior of 01 is characteristically different from that of the conventional device 100.

The heat loss mainly generated in the semiconductor substrate 1 due to the forward current is transferred to the metal electrodes 2 and 3 as indicated by the arrows in FIGS. 1 and 2, and further,
It is transmitted to the upper metal body 5 and the lower metal body 6 through the insulator 7. Then, the heat loss transferred to the lower metal body 6 is transferred to the radiator 13 and further dissipated from the outer surface of the radiator 13 into the atmosphere.

At the same time, the heat loss transferred to the upper metal body 5 is transferred to the heat transfer body 21, and further the heat transfer body 2
It is transmitted from 1 to the radiator 13. Then, the heat is dissipated from the outer surface of the radiator 13 into the atmosphere. That is, in the semiconductor device 101, since the heat transfer body 21 is provided, the heat loss transferred to the upper metal body 5 is also efficiently transferred to the heat radiator 13 like the heat loss transferred to the lower metal body 6 to radiate heat. It is released to the atmosphere through the vessel 13.

Therefore, not only the upper metal body 5 but also the lower metal body 6 contributes to the metal electrodes 2 and 3 as sinks of the heat loss in a substantially equal manner. Therefore, the heat loss flows in the metal electrodes 2 and 3 in a substantially radial manner around the central axis thereof, as indicated by the arrows in FIGS. 1 and 2. That is, the heat loss conducted through the metal electrodes 2 and 3 is substantially evenly and evenly distributed toward both the upper metal body 5 and the lower metal body 6. Therefore, most of the regions of the metal electrodes 2 and 3 are used as waste heat conduction paths without waste. As a result, in the semiconductor device 101, the cooling efficiency of the semiconductor substrate 1 is dramatically improved as compared with the conventional device 100 having the same external dimensions, and at the same time, the temperature distribution in the direction along the main surface of the semiconductor substrate 1 is made uniform. It

As described above, in the semiconductor device 101, by providing the heat transfer body 21, the semiconductor substrate 1 is efficiently and substantially uniformly cooled. Therefore, the semiconductor device 101 is smaller than the conventional device 100 and can handle a large current, and at the same time, the characteristics of the semiconductor element are made uniform and the characteristics are improved. Moreover, the heat transfer body 21 is a plate-shaped member and is easy to manufacture and at low cost. That is, the semiconductor device 101 has an excellent advantage that it can be implemented by simply adding a low-priced and simple member to the conventional device 100.

The coupling between the heat transfer body 21 and the upper metal body 5 and the radiator 13 may be realized not only by fastening but also by another method in which good thermal contact is achieved. For example, they may be fixed by brazing, adhesion or the like. However, the above-described semiconductor device 101 in which the heat transfer body 21 is fixed by fastening has an advantage that the device can be easily disassembled and assembled.

<2. Second Preferred Embodiment> Next, a semiconductor device according to a second preferred embodiment will be described. FIG. 4 is a front sectional view of the semiconductor device of this embodiment. This semiconductor device 102
Is also a diode with a large current capacity, like the semiconductor device 101 of the first embodiment. In the semiconductor device 102, the flat plate-shaped heat transfer body 31 is not fastened to the radiator 13 but is fastened to the side surface of the upper metal body 5 and the side surface of the lower metal body 6 in comparison with the semiconductor device 101. Characteristically different. Heat transfer body 3
Similar to the heat transfer body 21, 1 is made of a metal having good heat conductivity such as copper or aluminum.

Since the semiconductor device 102 is constructed as described above, the heat loss generated in the semiconductor substrate 1 by the forward current is caused by the metal electrode 2, as shown by the arrow in FIG.
3 is transmitted to the upper metal body 5 and the lower metal body 6 through the insulator 7. Then, the heat loss transferred to the lower metal body 6 is transferred to the radiator 13, and further,
The heat is dissipated from the outer surface of the radiator 13 into the atmosphere.

At the same time, the heat loss transferred to the upper metal body 5 is transferred to the heat transfer body 31, and the heat transfer body 3 is further transferred.
It is transmitted from 1 to the lower metal body 6. Then, it is transmitted to the radiator 13 through the lower metal body 6, and is diffused from the outer surface of the radiator 13 into the atmosphere. That is, the semiconductor device 10
In No. 2, since the heat transfer body 31 is provided, the flow of loss heat bypasses the gap 14 and is efficiently transmitted to the lower metal body 6. As a result, the heat loss transferred to the upper metal body 5 is also transferred to the radiator 13 like the heat loss transferred to the lower metal body 6, and finally dissipated to the atmosphere through the heat radiator 13. .

Therefore, the heat loss is not only directed to the lower metal body 6 in the metal electrodes 2 and 3 as shown by the arrow in FIG. 4, but also a considerable portion thereof is directed to the upper metal body 5. Disperse in and flow. Therefore, the metal electrodes 2 and 3 are efficiently used as a conduction path for loss heat. As a result, in the semiconductor device 102, the cooling efficiency of the semiconductor substrate 1 is improved as compared with the conventional device 100 having the same external dimensions. Also,
The uniformity of the temperature distribution in the direction along the main surface of the semiconductor substrate 1 is also improved.

As described above, in the semiconductor device 102, by providing the heat transfer body 31, the semiconductor substrate 1 is efficiently cooled, and the uniformity of its temperature distribution is improved. Thus, the device is small and can handle a large current, and the characteristics of the semiconductor element are improved.

Further, in this apparatus 102, the heat transfer body 31
Since there is no connection between the radiator 13 and the radiator 13, even if the radiator 13 does not have a space for mounting the heat transfer body 31, such as when the radiator 13 has a width less than or equal to the width of the metal block 4. It has the advantage that it can be implemented. Moreover, in addition to the simple structure of the heat transfer body 31, the semiconductor device 102 is simply attached to the side surfaces of the upper metal body 5 and the lower metal body 6 of the conventional device 100.
Has the advantage that it can be implemented at low cost.

<3. Third Embodiment> Next, a semiconductor device according to a third embodiment will be described. FIG. 5 is a front sectional view of the semiconductor device of this embodiment. This semiconductor device 103
Is also a diode with a large current capacity, like the semiconductor device 101 of the first embodiment. The semiconductor device 103 is characteristically different from the semiconductor device 101 in that a heat transfer body 40 using a heat pipe is installed instead of the plate-shaped heat transfer body 21.

The heat transfer body 40 includes a heat conductor 41 fastened and fixed to the side surface of the upper metal body 5, another heat conductor 42 fastened and fastened to the upper surface of the radiator 13, and a heat connecting them. It has a pipe 43. Heat conductor 4
Reference numerals 1 and 42 have a flat plate shape, and a heat pipe 43 is inserted therein. The heat conductors 41, 42 are preferably made of a metal having good heat conductivity such as copper or aluminum.

A medium such as pure water or Fluorinert is enclosed in the heat pipe 43, and from the heat conductor 41 on the high temperature side to the heat conductor 42 on the low temperature side,
Transfers heat with high transfer efficiency. Heat conductors 41, 4
Since 2 is fixed to the upper metal body 5 and the radiator 13 by fastening, the thermal contact between them is good.
In the semiconductor device 103, since the heat pipe 43 is used, the radiator 13 is directed upward, and the terminals 2a and 3a are connected.
It is installed and used with the posture of facing downward.

Since the semiconductor device 103 is constructed as described above, the heat loss generated in the semiconductor substrate 1 by the forward current is transferred to the metal electrodes 2 and 3 as shown by the arrow in FIG. Further, it is transmitted to the upper metal body 5 and the lower metal body 6 through the insulator 7. Then, the heat loss transferred to the lower metal body 6 is transferred to the radiator 13 and further dissipated from the outer surface of the radiator 13 into the atmosphere.

At the same time, the heat loss transferred to the upper metal body 5 is transferred to the heat transfer body 40, and further the heat transfer body 4 is transferred.
It is transmitted from 0 to the radiator 13. Then, the heat is dissipated from the outer surface of the radiator 13 into the atmosphere. That is, in the semiconductor device 103, since the heat transfer body 40 is provided, the heat loss transferred to the upper metal body 5 is also efficiently transferred to the heat radiator 13 like the heat loss transferred to the lower metal body 6 to radiate heat. It is released to the atmosphere through the vessel 13.

Therefore, as indicated by the arrow in FIG.
The heat loss that is conducted through the metal electrodes 2 and 3 flows toward both the upper metal body 5 and the lower metal body 6 in a substantially evenly distributed and even manner. Therefore, most of the regions of the metal electrodes 2 and 3 are used as waste heat conduction paths without waste. Moreover, the temperature distribution in the semiconductor substrate 1 is also substantially uniform. As a result, in the semiconductor device 101, the cooling efficiency of the semiconductor substrate 1 is dramatically improved and the characteristics of the semiconductor elements formed on the semiconductor substrate 1 are also improved, as compared with the conventional device 100 having the same external dimensions.

As described above, in the semiconductor device 103, by providing the heat transfer body 40, the semiconductor substrate 1 is efficiently and substantially uniformly cooled, so that the semiconductor device 103 is small and can handle a large current. The characteristics of the semiconductor device are also improved. Moreover, since the heat transfer body 40 uses the heat pipe, it is possible to transfer a large amount of heat with higher transfer efficiency than the heat transfer body 21 that uses only heat conduction. For this reason, the semiconductor device 103 of this embodiment is particularly suitable for application to a semiconductor device with large heat loss, and has the advantage that a semiconductor device with enormous heat loss can be made compact and lightweight.

<4. Fourth Example> Next, a composite semiconductor device according to a fourth example will be described. FIG. 6 is a front view of the composite semiconductor device of this embodiment. FIG. 7 is a side view of the device shown in FIG. The composite semiconductor device 104 is a diode with a large current capacity, which includes a large number (two or more) of semiconductor devices 101 in parallel. The radiator 13 included in each semiconductor device 101 is shared, and a plate-shaped heat conductor 51 is used instead of the radiator 13 having fins. The lower metal body 6 and the heat transfer body 21 included in each semiconductor device 101 are fixed to both main surfaces of the 51.

One end of a heat pipe 53 is inserted into the heat conductor 51, and a fin-shaped cooler 52 is attached to the other end of the heat pipe 53. Heat conductor 51
Is preferably composed of a heat conductive metal such as copper or aluminum. A medium such as pure water or Fluorinert is enclosed in the heat pipe 53, and transfers heat from the heat conductor 51 on the high temperature side to the cooler 52 on the low temperature side. The composite semiconductor device 104
Since the heat pipe 53 is used, the radiator 52
Is used in such a posture that the heat conductor 51 faces downward and the heat conductor 51 faces downward.

The terminal 2a of each semiconductor device 101 is an electrode plate 6
2 and the terminal 3a is connected to another electrode plate 61. These electrode plates 62 and 61 have a function of connecting a plurality of semiconductor devices 101 in parallel.

Since the composite semiconductor device 104 is constructed in this way, the heat loss generated in each semiconductor device 101 is transmitted to the heat conductor 51 through the lower metal body 6 and the heat transfer body 21, and further to the heat pipe 53. Is efficiently transmitted to the cooler 52. The heat loss transferred to the cooler 52 is dissipated from its outer surface into the atmosphere.

As described above, in the composite semiconductor device 104, a large amount of heat loss is generated because a large number of semiconductor devices 101 are provided, but the heat loss which each semiconductor device 101 releases is cooled by using the heat pipe 53. The semiconductor device 101 is efficiently cooled because it is transmitted to the container 52. That is, the high cooling efficiency of the semiconductor device 101 itself is utilized without waste. In the composite semiconductor device 104,
Since the heat conductor 51 is shared between the semiconductor devices 101, there is an advantage that a composite semiconductor device including a plurality of semiconductor devices 101 can be easily configured.

<5. Other Examples> (1) In the semiconductor device 101, the heat transfer body 21 may have a cross-sectional shape other than the “L” shape. For example, in the front sectional view of FIG. 2, the lateral width of the radiator 13 matches the lateral width of the metal block 4, the heat transfer body 21 has a flat plate shape, and the side surface of the upper metal body 5 and the side surface of the lower metal body 6, Also, it may be attached so as to contact the side surface (not the upper end surface) of the radiator 13. Also in this configuration, the same effect as that of the semiconductor device 101 is obtained.

(2) The semiconductor substrate 1 may be other than the diode element. It suffices if a power semiconductor element that requires cooling is formed. For example, it may be a power element such as a thyristor (including a gate turn-off thyristor) and a transistor. The same effect can be obtained in a device in which these elements are formed on the semiconductor substrate 1.

(3) Although the radiator 13 is exemplified by a fin-shaped radiator that radiates heat by an air cooling system, it may be a radiator of another system such as a water cooling system or an oil cooling system. Further, also in the radiator 13 to which one semiconductor device is attached, the heat pipe as shown in the fourth embodiment may be used.

[0062]

【The invention's effect】

<Effect of the Invention According to Claim 1> In the semiconductor device of the present invention, by providing the heat transfer means, the heat loss transferred to the first heat dissipation block is the same as the heat loss transferred to the second heat dissipation block. , Is efficiently transmitted to the heat radiating means, and is radiated to the outside through the heat radiating means. Therefore, the loss heat is generated by the first heat dissipation block and the second heat dissipation in the two main electrodes.
It flows toward both of the heat radiating blocks in a substantially uniform and evenly distributed manner.

As a result, the cooling efficiency of the semiconductor substrate is improved and the uniformity of the temperature distribution along the main surface of the semiconductor substrate is improved. Therefore, this semiconductor device is small in size, can handle a large current, and has improved characteristics such as uniform characteristics of semiconductor elements formed on the semiconductor substrate.

<Effect of the Invention According to Claim 2> In the semiconductor device of the present invention, since the heat transfer means is provided, the heat loss transferred to the first heat dissipation block is also transferred to the heat dissipation means through the second heat dissipation block. And is released to the outside through the heat dissipation means. For this reason, the heat loss in the two main electrodes disperses and flows not only toward the second heat dissipation block but also a considerable portion toward the first heat dissipation block.

As a result, the cooling efficiency of the semiconductor substrate is improved and the uniformity of the temperature distribution along the main surface of the semiconductor substrate is improved. Therefore, this semiconductor device is small in size, can handle a large current, and has improved characteristics such as uniform characteristics of semiconductor elements formed on the semiconductor substrate.

<Effect of the Invention According to Claim 3> In the semiconductor device of this invention, since the heat transfer means is a heat conductor which is substantially made of metal, the heat of the first heat dissipation block is transferred by heat conduction. Or it is transmitted to the second heat dissipation block. Further, since the heat transfer means is substantially made of metal and has a plate shape, the heat transfer means can be easily obtained at low cost. That is, in this semiconductor device, the improvement of the heat radiation effect and the improvement of the characteristics are realized easily and inexpensively by using the simple and inexpensive member.

<Effect of the Invention According to Claim 4> In the semiconductor device of the present invention, since the heat transfer means includes the heat pipe, a large amount of heat in the first heat dissipation block is efficiently transferred to the heat dissipation means or the second heat dissipation block. Well communicated. Therefore, in this semiconductor device, a device with large heat loss can be made compact and lightweight.

<Effect of the Invention According to Claim 5> In the composite semiconductor device of the present invention, since the heat dissipation means is shared by a plurality of semiconductor devices, a composite semiconductor device including a plurality of semiconductor devices can be easily provided. Composed. Moreover, since the heat radiating means includes the heat pipe, a large amount of heat loss transferred from the plurality of semiconductor devices to the heat radiating means is efficiently dissipated to the outside. That is, the high cooling efficiency of each semiconductor device is effectively utilized.

[Brief description of drawings]

FIG. 1 is a side sectional view of a semiconductor device according to a first embodiment.

FIG. 2 is a front sectional view of a semiconductor device according to a first embodiment.

FIG. 3 is a partially cutaway perspective view of the semiconductor device of the first embodiment.

FIG. 4 is a front sectional view of a semiconductor device according to a second embodiment.

FIG. 5 is a front sectional view of a semiconductor device according to a third embodiment.

FIG. 6 is a front view of a composite semiconductor device according to a fourth embodiment.

FIG. 7 is a side view of a composite semiconductor device according to a fourth embodiment.

FIG. 8 is a side sectional view of a conventional semiconductor device.

FIG. 9 is a front sectional view of a conventional semiconductor device.

FIG. 10 is an assembly process diagram of a conventional semiconductor device.

[Explanation of symbols]

1 semiconductor substrate, 2,3 metal electrode (main electrode), 5 upper metal body (first heat dissipation block), 6 lower metal body (second)
Heat dissipation block), 7 insulator (electric insulator), 2a, 3
a terminal, 13 radiator (radiating means), 101, 10
2, 103 semiconductor device, 104 composite semiconductor device, 2
1, 31, 40 heat transfer body (heat transfer means), 43, 53
heat pipe.

Claims (5)

[Claims] 1. An end face of two main electrodes is in pressure contact with one and the other of the two main surfaces so as to sandwich both main surfaces of a semiconductor substrate on which a semiconductor element is formed, thereby forming a recess. The semiconductor substrate and the two main electrodes are housed in a hollow portion formed by assembling the first and second heat dissipation blocks so that the respective concave portions face each other, and The first and second heat dissipation blocks are in pressure contact with the side surfaces of the two main electrodes so as to sandwich the side surfaces of the two main electrodes from opposite sides via an electric insulator, and from the first heat dissipation block, the respective main electrodes are connected. In a semiconductor device in which a terminal electrically connected to the second heat dissipation block is exposed and a heat dissipation means for dissipating heat to the outside is attached to the second heat dissipation block, the second heat dissipation block is connected to the first heat dissipation block and the heat dissipation means. And, wherein a heat transfer means to transfer heat is provided to the radiating means from said first heat sink block. 2. An end face of two main electrodes is in pressure contact with one and the other of the two main surfaces so as to sandwich both main surfaces of a semiconductor substrate on which a semiconductor element is formed, and a recess is formed. The semiconductor substrate and the two main electrodes are housed in a hollow portion formed by assembling the first and second heat dissipation blocks so that the respective concave portions face each other, and The first and second heat dissipation blocks are in pressure contact with the side surfaces of the two main electrodes so as to sandwich the side surfaces of the two main electrodes from opposite sides via an electric insulator, and from the first heat dissipation block, the respective main electrodes are connected. In a semiconductor device in which a terminal electrically connected to the second heat dissipation block is exposed, and a heat dissipation means for dissipating heat to the outside is attached to the second heat dissipation block, the first heat dissipation block and the second heat dissipation block are provided. Wherein a to bind, heat transfer means to transfer heat to the second heat sink block from the first heat sink block is provided in and. 3. The semiconductor device according to claim 1 or 2, wherein the heat transfer means is a plate-shaped heat conductor substantially made of metal. 4. The semiconductor device according to claim 1 or 2, wherein the heat transfer means comprises a heat pipe. 5. A plurality of semiconductor devices according to any one of claims 1 to 4 are provided, and the heat dissipating means is commonly used among these semiconductor devices, and the heat dissipating means are heat sources. A composite semiconductor device comprising a pipe.