JPH07321286A - Heat source element and circuit having temperature dependence element - Google Patents

Abstract

PURPOSE:To improve thermal matching characteristic between temperature dependence elements by setting distance, direction or both of them of the temperature dependence element for a heat source element and by maintaining constant relationship between characteristic values even when temperature of two or more temperature dependence elements has changed. CONSTITUTION:A plurality of heat soruce elements are concentrically arranged at the one end of a chip 22 in a semiconductor integrated circuit 20 to form a rectangular heat source element group 24. Moreover, in the other end side of the chip 22, a plurality of transistors Tr1, Tr2 are adjacently provided as the temperature dependence elements at the predetermined position of the heat source element group 24. Therefore, on the basis of the temperature dependence characteristic of the temperature dependence element, the transistors Tr1, Tr2 are arranged by setting distance, direction and both of them to the heat source element group 24. Even when temperature of two or more transistors Tr1, Tr2 is changed, the characteristic value is set to maintain tame constant relationship. Thereby, thermal matching characteristic can be improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit having a heat source element and a temperature dependent element, and more particularly to improving the thermal matching between temperature dependent elements.

[0002]

2. Description of the Related Art In some semiconductor integrated circuits used for power supply circuits of audio equipment, a power transistor for generating a large output and a control unit for controlling the same are mixed in one chip. FIG. 7 shows an example of a conventional configuration of such a semiconductor integrated circuit 2. A power transistor 6 and a control unit 8 that controls the power transistor 6 are provided on the chip 4. The control unit 8 includes a transistor Tr1 and a transistor Tr2, and in FIG. 7, the power transistor 6, the transistor Tr1, and the transistor Tr2 are arranged in this order.

In this example, as shown in the circuit diagram of FIG. 8, the transistors Tr1 and Tr2 are
It constitutes a current mirror circuit. The current mirror circuit uses a pair of two transistors having the same characteristics so that the collector current I2 of the transistor Tr2 is
It is a circuit for keeping the collector current I1 of the transistor Tr1 always the same. In this example,
The current mirror circuit constitutes a part of the control unit 8 for stabilizing the output of the power transistor 6.

[0004]

However, the conventional semiconductor integrated circuit 2 as described above has the following problems. As shown in FIG. 7, the transistor Tr1 is arranged near the power transistor 6, but the transistor Tr2 is arranged apart from the power transistor 6. Therefore, the temperature of the transistor Tr1 becomes higher than the temperature of the transistor Tr2 due to the heat generation of the power transistor 6 during the operation of the semiconductor integrated circuit 2.

Generally, the characteristics of the transistor tend to depend on the temperature. Even in the current mirror circuit shown in FIG. 8, when the temperature of the transistor Tr1 becomes higher than the temperature of the transistor Tr2, the voltage Vf1 between the base and the emitter of the transistor Tr1 changes. , The voltage between the base and emitter of the transistor Tr2 tends to be lower than the voltage Vf2. Therefore, the current I2 becomes larger than the current I1, and the function as the current mirror circuit is hindered.

Therefore, the output of the power transistor 6 cannot be stabilized, and the output of the power transistor 6 fluctuates (ripple). Therefore, for example, when the conventional semiconductor integrated circuit 2 is used for a power supply circuit of an audio device, the output is not stable and the reproduction accuracy of the musical sound is deteriorated, which causes inconveniences.

The present invention improves such a conventional semiconductor integrated circuit to improve the thermal matching between temperature-dependent elements in a circuit having a heat source element such as a power transistor and a temperature-dependent element such as a transistor. The purpose is to

[0008]

A circuit according to claim 1 has one or more heat source elements that generate or absorb heat during use, and temperature-dependent characteristics whose characteristic values change depending on the temperature during use. In a circuit having two or more temperature-dependent elements, which requires that the characteristic value has a constant relationship with the characteristic values of other temperature-dependent elements, each temperature-dependent element is based on the temperature-dependent characteristic of the temperature-dependent element. For each of the above, the distance and / or the direction of the temperature dependent element with respect to the heat source element or both are set and arranged so that the characteristic values maintain a constant mutual relationship even when the temperature of two or more temperature dependent elements changes. It is characterized by being configured.

According to a second aspect of the present invention, in the circuit of the first aspect, one or more heat source elements and two or more temperature dependent elements are arranged so that the temperature changes of the two or more temperature dependent elements are substantially the same. Characterize.

According to a third aspect of the present invention, in the circuit of the second aspect, one or more heat source elements are centrally arranged to form a heat source element group, and two or more temperature-dependent elements are provided to the heat source element group. It is characterized in that it is arranged at a distance position and facing the heat source element group at a constant angle.

A fourth aspect of the present invention is the circuit of the first aspect, wherein the circuit is a semiconductor integrated circuit.

[0012]

According to the first aspect of the present invention, the temperature-dependent element is arranged such that the distance and / or the direction of the temperature-dependent element with respect to the heat source element are set for each temperature-dependent element based on the temperature-dependent characteristics of the temperature-dependent element. The characteristic values are configured to maintain a constant relationship with each other even when the temperature of the temperature-dependent element changes.

Therefore, the characteristic values of two or more temperature-dependent elements maintain a constant relationship with each other regardless of the amount of heat generation or the amount of heat absorption of the heat source element.

According to a second aspect of the present invention, in the circuit of the first aspect, one or more heat source elements and two or more temperature dependent elements are arranged so that the temperature changes of the two or more temperature dependent elements are substantially the same. Characterize.

Therefore, the temperature of two or more temperature-dependent elements is
It will be almost the same.

According to a third aspect of the present invention, in the circuit of the second aspect, a heat source element group in which one or more heat source elements are centrally arranged is formed, and two or more temperature-dependent elements are arranged with respect to the heat source element group. It is characterized in that it is arranged at a distance position and facing the heat source element group at a constant angle.

Therefore, the influence of each heat source element on the temperature dependent element can be regarded as the influence of the heat source element group. Furthermore, when the temperature of the temperature-dependent element is expressed as a function of the distance between the temperature-dependent element and the heat source element group and the confronting angle between the temperature-dependent element and the heat source element group, the temperatures of two or more temperature-dependent elements are It will be almost the same.

According to a fourth aspect of the present invention, in the circuit of the first aspect, the circuit is a semiconductor integrated circuit.

Therefore, since the distance between the heat source element and the temperature dependent element is small, the temperature of the temperature dependent element is easily affected by heat generation or heat absorption of the heat source element, and it is difficult to thermally separate the heat source element and the temperature dependent element. Even in some cases, temperature changes of two or more temperature dependent elements maintain a predetermined relationship with each other.

[0020]

1 shows the configuration of a semiconductor integrated circuit 20 according to an embodiment of the present invention. A rectangular heat source element group 2 in which a plurality of power transistors (not shown) which are heat source elements are collectively arranged on one end side of a rectangular chip 22.
4 is forming. Each side of the rectangular heat source element group 24 is
It is formed so as to be substantially parallel to the four sides of the chip 22.

On the other end side of the chip 22, the transistors Tr1 and Tr2, which are temperature-dependent elements, are equidistant from one side 24a of the rectangular heat source element group 24.
However, they are arranged adjacent to each other. Also, the transistor Tr
1 and the front surface Tr1a, Tr2a of the transistor Tr2
Are arranged so as to face one side 24a of the heat source element group 24 at a constant angle (0 °, that is, parallel in this embodiment).

In this embodiment, as in the case of the conventional semiconductor integrated circuit 2 described above, the transistors Tr1 and Tr2 constitute the current mirror circuit shown in the circuit diagram of FIG. 8 to stabilize the output of the power transistor. It constitutes a part of the control unit for making the operation.

When this semiconductor integrated circuit 20 is operated,
The temperature of the transistors Tr1 and Tr2 rises due to the heat generation of the heating element group 24 including the power transistors. However, as described above, the transistor Tr
1 and the transistor Tr2 are arranged at a position equidistant to the heat source element group 24 and face the heat source element group 24 at a constant angle.

Therefore, the transistors Tr1 and Tr2 are evenly affected by the heat generated by the heating element group 24. Therefore, even when the output of the power transistor changes and the amount of heat generated by the heating element group changes during operation of the semiconductor integrated circuit 20, the temperatures of the transistors Tr1 and Tr2 are always the same. .

Therefore, in the circuit shown in FIG. 8, the base-emitter voltage Vf1 of the transistor Tr1 and
Base-emitter voltage Vf2 of transistor Tr2
And are always the same. That is, the current I2 and the current I1 are always the same, and the function as the current mirror circuit is not disturbed.

Therefore, the output of the power transistor 6 can be stabilized and the ripple of the power transistor can be reduced. Therefore, when the semiconductor integrated circuit 20 according to this embodiment is used for a power supply circuit of an audio device or the like, the power supply output is stabilized and the musical sound reproduction accuracy can be improved.

In the embodiment described above, the transistor T
The case where the r1 and the transistor Tr2 constitute the current mirror circuit shown in the circuit diagram of FIG. 8 has been described as an example, but the present invention is not limited to this and is applied to a circuit generally requiring thermal matching. can do.

Another example of a circuit which is required to have thermal matching is a differential amplifier circuit which amplifies and outputs a difference between two input voltages. FIG. 2 shows a part of the differential amplifier circuit. In the differential amplifier circuit of FIG. 2, thermal matching of the transistors Tr1 and Tr2 is required. That is, if the temperatures of the transistor Tr1 and the transistor Tr2 are different, the characteristic values depending on the temperature are different between them, and the differential amplifier circuit does not operate normally. Therefore, in the differential amplifier circuit shown in FIG. 2 as well, the arrangement as shown in FIG. 1 can ensure the thermal matching of the transistors Tr1 and Tr2.

Output current Ip of the power transistor when the operational amplifier circuit is used for controlling the power transistor
3 shows the ripple removal characteristic (R.R.) of the output voltage of the power transistor with respect to FIG. Conventional arrangement (eg,
In the arrangement shown in FIG. 7, as the heat generation amount increases due to the increase in the output current Ip of the power transistor, the thermal matching of the transistors Tr1 and Tr2 affected by this heat generation cannot be ensured, so that the transistor Tr1 and the transistor Tr2 are not ensured. Control unit including
The ripple removal characteristic (R.R.) of the output voltage of the power transistor is lowered (shown by a broken line in FIG. 3).

However, in the arrangement according to this embodiment (arrangement of FIG. 1), the transistor Tr1 and the transistor T are arranged.
Since the thermal matching of r2 can be ensured, it is possible to reduce the deterioration of the ripple removal characteristic (RR) of the output voltage due to the increase of the output current Ip of the power transistor. (Indicated by a solid line in FIG. 3). Therefore, even when the operation amplification circuit is used in the control unit of the power supply circuit having the power transistor, the output of the power supply circuit can be stabilized by arranging it as shown in FIG.

Next, FIG. 4 shows the structure of a semiconductor integrated circuit 30 according to another embodiment of the present invention. The embodiment described above (Fig. 1
In the above description, the heat source element group 24 is arranged at one end side of the chip 22, but in the present embodiment, a plurality of power transistors (not shown), which are heat source elements, are collected near the center of the chip 22. A rectangular heat source element group 34 arranged centrally is formed.

Each side of the rectangular heat source element group 34 is formed so as to be substantially parallel to the four sides of the chip 22. Further, the distance between each side of the rectangular heat source element group 34 and each side of the corresponding chip 22 is made substantially equal.

A rectangular heat source element group 3 is formed on the chip 22.
The transistor Tr1, the transistor Tr2, the transistor Tr3, and the transistor Tr4, which are temperature-dependent elements, are arranged adjacent to each other at a position equidistant from one side 34a of the No. 4 side. The front surfaces Tr1a to Tr4a of the transistors Tr1 to Tr4 are the heat source element group 3
4 are arranged so as to face each other in parallel to one side 34a.

Similarly, on the chip 22, transistors Tr5 to Tr8, Tr9 to Tr12, Tr13 to Tr1 are provided.
6 is the other sides 34b, 34 of the rectangular heat source element group 34.
They are arranged at equal distances from c and 34d so as to face each other in parallel. In this embodiment, as shown in FIG. 4, the distances Da, Db, Dc and Dd are arranged to be equal.

Therefore, the transistors Tr1 to Tr16 are evenly affected by the heat generated by the heating element group 34, and their temperatures are always the same. Therefore, even if there are many elements that require thermal matching, the temperature of the elements can be kept the same.

In this embodiment, the distances Da, Db, Dc and Dd are arranged to be equal as described above, but the distances Da, Db, Dc and Dd are arranged to be partially or entirely different. May be. For example, the transistors Tr1 to Tr1
Thermal matching is required between Tr4 and thermal matching is required between transistors Tr5 to Tr8, but between Tr1 to Tr4 and Tr5 to Tr8,
If thermal matching is not required, the distances Da and Db may be arranged differently.

Next, FIG. 5 shows the structure of a semiconductor integrated circuit 40 according to another embodiment of the present invention. Although the heat source element group 44 is formed in a rectangular shape in the vicinity of the center of the chip 22 in the above-described embodiment, in the present embodiment, the heat source element group 44 is formed.
Are formed in a circular shape near the center of the chip 22.

On the chip 22, a circular heat source element group 44 is formed.
At a position equidistant from the circumference 44a of the transistor Tr1.
And the transistor Tr2 are arranged adjacent to each other.
In addition, the front surface T of the transistor Tr1 and the transistor Tr2
r1a and Tr2a are the circumference 44 of the heat source element group 44.
It is arranged so as to face a substantially in parallel.

Similarly, on the chip 22, the transistors Tr3 to Tr16 are arranged around the circumference 44 of the circular heat source element group 44.
Circles 44a are provided at positions equidistant from a.
Are arranged so as to face each other almost parallel to.

That is, as shown in FIG. 5, the transistors Tr1 to Tr16 are arranged substantially concentrically with respect to the circumference 44a. Therefore, the transistors Tr1 to Tr1
The transistor Tr16 is evenly affected by the heat generated by the heating element group 44, and their temperatures are always the same.

In each of the above-described embodiments, the transistors Tr1, ... Are arranged linearly, rectangularly, or arcuately. However, if the transistors Tr1, ... Are equidistant from the heat source element group 24, etc. It is not limited to. Further, in the above-mentioned respective embodiments, the facing angle of the transistors Tr1, ... With respect to the heat source element group 24 and the like is set to 0 °, but it is not limited to this as long as it is the same angle.
It may be 45 °.

Further, even if the transistors Tr1, ... Are not equidistant from the heat source element group 24, or the like, or
Even if the transistors Tr1, ... Do not face the heat source element group 24 at the same angle, the transistors Tr1 ,.
, May be arranged such that the transistors Tr1, ... Have the same temperature by adjusting the distance to the heat source element group 24 and the facing angle.

Next, FIG. 6 shows the structure of a semiconductor integrated circuit 50 according to another embodiment of the present invention. In the above-described embodiment, for example, the embodiment shown in FIG. 1, the heat source element group 24,
The transistors Tr1 and Tr2 are arranged so that their distances from each other are equal, but in the present embodiment, they are arranged as shown in FIG.
, The heat source element group 54 and the transistor Tr
1, Tr2, ... Are arranged in a staircase pattern so as to have different distances from each other. This is for the following reason.

In each of the above-described embodiments, two or more transistors having the same sensitivity of the characteristic value to the temperature increase (rate of change of the characteristic value with respect to the temperature increase) are used. Four transistors Tr1 to T each having a different rate of change in characteristic value with respect to increase
r4 is used.

That is, the rate of change of the characteristic value with respect to the temperature rise is the smallest in the transistor Tr1, and then Tr.
2, Tr3, and the change rate of Tr4 is the largest. That is, the transistor Tr1 is most insensitive to the temperature rise, and the transistor Tr4 is most sensitive.

As described above, when a plurality of transistors each having a different rate of change in the characteristic value with respect to the temperature rise are used, the distances between the heat source element group 54 and the transistors Tr1 to Tr4 are all equal as in the above-described embodiment. With this arrangement, the heat generation of the heat source element group 54 due to the operation of the semiconductor integrated circuit 50 is evenly affected, so that the temperature rise of the transistors Tr1 to Tr4 becomes uniform.

However, since the rate of change of the characteristic value with respect to a constant temperature rise is different among the four transistors Tr1 to Tr4, the amount of change of the characteristic value due to the temperature rise is:
The four transistors Tr1 to Tr4 are different. That is, in this case, the amount of change in the characteristic value of the transistor Tr1 is minimum, and the amount of change in the characteristic value of the transistor Tr4 is maximum.

Therefore, in order to equalize the amount of change in the characteristic value due to the temperature rise among the transistors,
As shown in FIG. 6, the transistors Tr1, Tr2, ... Are arranged in steps.

With this arrangement, the semiconductor integrated circuit 5
When the heat source element group 54 generates heat due to the operation of 0, the temperature rise of the transistor Tr1 closest to the heat source element group 54 is the largest, then Tr2 and Tr3, and the temperature rise of Tr4 is the smallest. On the other hand, as described above, the change rate of the characteristic value with respect to the temperature increase is smallest in the transistor Tr1, then Tr2 and Tr3, and the change rate in Tr4 is the largest. As a result, the transistors Tr1 to Tr4
The amount of change in the characteristic value of can be made substantially equal.

As described above, even when a plurality of transistors each having a different rate of change of the characteristic value with respect to the temperature rise are used, by arranging them as shown in FIG. It can be even between the transistors.

Further, in the embodiment shown in FIG. 6, the heat source element group 54 and the transistors Tr1, Tr2, ... Are arranged stepwise so that the distances therebetween are different, but the direction with respect to the heat source element group 54 is the transistor Tr1. , Tr2,
... may be arranged differently. Further, the distance between the heat source element group 54 and the transistors Tr1, Tr2, ... And the transistors Tr1, Tr for the heat source element group 54.
The directions of 2, ... May be arranged so as to be different from each other.

In the embodiment shown in FIG. 4 (described above), for example, the transistors Tr1 to Tr4 and the transistors Tr5 to Tr8 require thermal matching, but the transistors Tr1 to Tr4 are the same. In the case where the transistors Tr5 to Tr8 have different rate of change of the characteristic value with respect to temperature change, the same idea as in the above-described embodiment (see FIG. 6) can be applied.

That is, in FIG. 4, the transistor Tr1 is configured by making the distances Da and Db different from each other.
~ Tr4 and transistors Tr5 ~ Tr8 can be made to have a temperature difference. As a result, the amount of change in the characteristic value due to heat can be made substantially equal.

In each of the above-mentioned embodiments, the heat source element group 2 in which a plurality of power transistors are centrally arranged is used.
However, the present invention is not limited to this, and the case where one heat source element such as a power transistor or a plurality of heat source elements does not form one heat source element group is described. , Is also applied when distributed.

As described above, when a plurality of heat source elements are arranged in a distributed manner, the influence of the temperature change of each heat source element on the transistors Tr1, ... The respective elements may be arranged so that the amount of change in the characteristic value of ... Is equalized as a result.

Further, according to the present invention, the transistors Tr1, ...
For example, not only when arranging each element so that the amount of change in the characteristic value of two or more temperature-dependent elements becomes equal, but also arranging each element so that the amount of change in these characteristic values satisfies a predetermined relationship. It can also be applied in cases.

For example, when the initial values of the characteristic values of two or more temperature-dependent elements are different and it is necessary to keep the ratio of the characteristic values constant irrespective of the change in temperature, these characteristic values should be kept constant. It is necessary to keep the ratio of the amount of change in the characteristic value constant. The present invention is also applied to the case where each element is arranged such that the change amount of the characteristic value satisfies a predetermined relationship, such as the case where each element is arranged so that the ratio of the change amount of the characteristic value is constant. To be done.

In each of the above-described embodiments, the transistor Tr1, ... Is used as an example of the temperature-dependent element, but the present invention is not limited to this, and an element having a temperature-dependent characteristic value is used. If applicable, it can be applied to other elements such as diodes and resistors.

Further, in each of the above-mentioned embodiments, the power transistor is exemplified as the heat source element, but it is also applicable to other heat generating elements which generate heat during use. Further, in each of the above-described embodiments, the case where the heat source element is the heat generating element has been described, but the present invention is also applicable when the heat source element is the heat absorbing element.

In each of the above embodiments, the case where the present invention is applied to the semiconductor integrated circuit has been described.
The present invention is not limited to this, and is applied to electric circuits and electronic circuits in general.

[0061]

According to the circuit of claim 1, the temperature-dependent element is arranged such that the temperature-dependent element has a distance and / or an orientation with respect to the heat source element based on the temperature-dependent characteristic of the temperature-dependent element. It is characterized in that the characteristic values maintain a constant mutual relationship even when the temperatures of two or more temperature-dependent elements change.

Therefore, the characteristic values of two or more temperature-dependent elements maintain a constant relationship with each other regardless of the amount of heat generation or the amount of heat absorption of the heat source element. That is, the thermal matching between two or more temperature-dependent elements can be improved.

According to a second aspect of the present invention, in the circuit of the first aspect, one or more heat source elements and two or more temperature dependent elements are arranged so that the temperature changes of the two or more temperature dependent elements are substantially the same. Characterize.

That is, the temperatures of two or more temperature-dependent elements are almost the same, regardless of the amount of heat generation or the amount of heat absorption of the heat source element. Therefore, when the temperature of two or more temperature-dependent elements is the same, if the characteristic value of one temperature-dependent element has a constant relationship with the characteristic value of another temperature-dependent element, the temperature-dependent element mutual The thermal consistency of the can be improved.

According to a third aspect of the present invention, in the circuit of the second aspect, a heat source element group in which one or more heat source elements are centrally arranged is formed, and two or more temperature dependent elements are arranged with respect to the heat source element group. It is characterized in that it is arranged at a distance position and facing the heat source element group at a constant angle.

That is, the influence of each heat source element on the temperature-dependent element can be grasped as the influence of the heat source element group. Furthermore, when the temperature of the temperature-dependent element is expressed as a function of the distance between the temperature-dependent element and the heat source element group and the confronting angle between the temperature-dependent element and the heat source element group, the temperatures of two or more temperature-dependent elements are It will be almost the same. Therefore,
Due to the relatively simple arrangement of the heat source element and the temperature dependent element,
The circuit according to claim 4 capable of improving the thermal matching between the temperature-dependent elements is characterized in that, in the circuit according to claim 1, the circuit is a semiconductor integrated circuit.

That is, since the distance between the heat source element and the temperature dependent element is small, the temperature of the temperature dependent element is easily affected by heat generation or heat absorption of the heat source element, and it is difficult to thermally separate the heat source element and the temperature dependent element. Even in some cases, temperature changes of two or more temperature dependent elements maintain a predetermined relationship with each other. Therefore, also in the semiconductor integrated circuit, the thermal matching between the temperature-dependent elements can be improved.

[Brief description of drawings]

FIG. 1 is a drawing showing a configuration of a semiconductor integrated circuit according to an embodiment of the present invention.

FIG. 2 is a diagram showing a part of a differential amplifier circuit.

3 is a diagram showing a ripple removal characteristic (RR) of an output voltage of a power transistor in a semiconductor integrated circuit according to an embodiment of the present invention.

FIG. 4 is a drawing showing a configuration of a semiconductor integrated circuit according to another embodiment of the present invention.

FIG. 5 is a drawing showing a configuration of a semiconductor integrated circuit according to another embodiment of the present invention.

FIG. 6 is a drawing showing a configuration of a semiconductor integrated circuit according to another embodiment of the present invention.

FIG. 7 is a drawing showing a configuration of a conventional semiconductor integrated circuit.

FIG. 8 is a diagram showing a part of a current mirror circuit.

[Explanation of symbols]

 20: Semiconductor integrated circuit 22: Chip 24: Heat source element group 24a ... One side of heat source element group Tr1, Tr2 ... Transistors Tr1a, Tr2a ... Front of transistor

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Koichi Yamazaki, 21 Saiin Mizozaki-cho, Ukyo-ku, Kyoto City, Kyoto Prefecture Rome Co., Ltd. (72) Inventor Tomoki Furuno 21 Saiin Mizozaki-cho, Kyoto City, Kyoto City, Rome Within the corporation

Claims (4)

[Claims] 1. One or more heat source elements that generate or absorb heat during use, and have temperature-dependent characteristics whose characteristic values change depending on temperature during use, and wherein said characteristic values are the same as those of other temperature-dependent elements. In a circuit including two or more temperature dependent elements, which need to have a constant relationship with the characteristic value, based on the temperature dependent characteristics of the temperature dependent elements, for each temperature dependent element, with respect to the heat source element The temperature-dependent element is arranged by setting the distance or the orientation or both, and the characteristic values maintain the constant relationship with each other even when the temperatures of the two or more temperature-dependent elements change. A circuit characterized by: 2. The circuit according to claim 1, wherein the one or more heat source elements and the two or more temperature dependent elements are arranged so that the temperature changes of the two or more temperature dependent elements are substantially the same. What to do. 3. The circuit according to claim 2, wherein a heat source element group in which the one or more heat source elements are concentratedly arranged is formed, and the two or more temperature-dependent elements are equidistant from the heat source element group. The heat source element group is disposed at a position and faces the heat source element group at a constant angle. 4. The circuit according to claim 1, wherein the circuit is a semiconductor integrated circuit.