JPH07316783A - Vacuum vapor deposition device for sublimatable material - Google Patents

Abstract

PURPOSE:To develop a thin-film substrate having high-performance vapor deposited films by composing a vessel, etc., for depositing the material to be deposited by evaporation of BN or MgO in a vapor deposition device for depositing a sublimatable material on the surface of a thin film consisting of paper, etc. CONSTITUTION:A pellet mixture 22 composed of SiO2 and SiO as raw materials for vapor deposition is used and is put into a housing container 23 at the time of forming the vapor deposited films of SiO on the surface of a substrate 4. The pellet mixture 22 is then heated via a graphite element 26 to be induction- heated by an induction heating coil 27 to generate SiO vapor by a reaction SiO2+SiO 2SiO. The SiO vapor is blown to the surface of the substrate 4 by a narrow nozzle 25 to form the SiO films. The housing container 23 of the raw material pellets 22 and a cap 24 thereof of this device are formed of materials, such as BN and MgO, by which the increasing of the gas permeation rate of the SiO films on the substrate 4 by the CO generated by reaction of the graphite element to be induction-heated with the SiO2, and the forming of the SiO coated substrate 4 having high gas permeability are prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sublimable substance vacuum deposition apparatus having a heating device for heating a sublimable substance such as SiO ₂ or SiO ₂ .

[0002]

_2. Description of the Related Art A vacuum vapor deposition apparatus is used for forming a thin film by vapor deposition of a sublimable substance such as SiO ₂ or SiO on a thin substrate such as paper or plastic film. The vacuum vapor deposition device will be described with reference to FIG. FIG. 4 shows the entire structure of the vacuum vapor deposition device.

As shown in the drawing, reels 2 and 3 are provided in the vapor deposition chamber 1, and a substrate 4 wound in a coil on one reel 2 is wound on the other reel 3. . The substrate 4 is wound around the reel 3 via a cooling roll 5 and a large number of deflector rolls 6. An evaporation device 7 is provided below the cooling roll 5, and a sublimable substance such as SiO ₂ or SiO is evaporated on the substrate 4 on the cooling roll 5 by the evaporation device 7. The inside of the vapor deposition chamber 1 is evacuated to a predetermined vacuum degree by the exhaust pump unit 8. Reference numeral 9 in the drawing is an edge mask which has a gap between both ends of the substrate 4 and overlaps with both ends of the substrate 4 and is arranged between the cooling roll 5 and the vapor deposition device 7.

The vapor deposition device 7 will be described with reference to FIGS. FIG. 5 shows a cross section of the vapor deposition device 7, FIG. 6 shows a plane in FIG. 5, and FIG. 7 shows a view taken along the line VII-VII in FIG.

As shown in the figure, a storage container 12 for storing the vapor deposition material 11 is installed on the heat-resistant brick 10, and the storage container 12 is made of graphite so as to surround the vapor deposition material 11. A heating target 13 made of graphite is installed on the top of the storage container 12, and a slit-shaped nozzle 14 is formed in the heating target 13. The cross-sectional area of the nozzle 14 is set smaller than the evaporation area of the vapor deposition material 11.
A heating device 15 is provided outside the object to be heated 13, and the object to be heated 13 is heated by the heating device 15. A heat insulating plate 16 is provided between the object to be heated 13 and the heating device 15, and the heat insulating plate 16 keeps the amount of heat radiated to the outside low. In addition, there is also one in which a SiC film is formed on the inner surface of the storage container 12.

In the above-described vacuum vapor deposition apparatus, after the interior of the vapor deposition chamber 1 has been made to have a predetermined vacuum degree by the exhaust pump unit 8, the substrate 4 is wound around the cooling roll 5 and a large number of deflector rolls 6 from one reel 2. It is wound up on the other reel 3. When the heating target 13 of the vapor deposition device 7 is heated by the heating device 15, the vapor deposition material 11 in the storage container 12 is vaporized, and the vaporized vapor deposition material 11 is vapor deposited on the substrate 4 on the cooling roll 5 through the nozzle 14. It has become so. The substrate 4 is vapor-deposited by the vapor deposition device 7 while being cooled on the cooling roll 5 so as to reduce the temperature rise due to heating during vapor deposition, and is wound on the reel 3. At the time of vapor deposition, the vaporized vapor deposition material 11 spreads and flies not only directly above but also in an oblique direction, but the edge mask 9 prevents the vapor deposition material 11 from adhering to the cooling roll 5 detached from the substrate 4.

[0007]

In the above-described vacuum vapor deposition apparatus, when the vapor deposition material 11 is vaporized by reaction in the storage container 12, the vapor deposition material 11 may be, for example, SiO ₂ , SiO ₂ .
Is put in a container 12, and SiO ₂ + SiO → 2SiO (gas) is caused to react at a high temperature to obtain SiO vapor.
At this time, since the storage container 12 is made of graphite, Si
It reacts with O ₂ as follows to generate SiO ₂ + C → SiO + CO (gas) SiO + C → SiO + CO (gas) CO gas. Further, the oxygen remaining in the vapor deposition chamber 1 reacts as follows, the 2C + O ₂ → 2CO (gas) storage container 12 is consumed, and CO gas is generated.
When a SiC film is formed on the inner surface of the storage container 12,
Initially, the above reaction does not occur, but during repeated use, the SiC film formed on the inner surface of the storage container 12 peels or cracks to expose the graphite surface, and
O gas will be generated.

When CO gas is generated, the performance of the vapor deposition film formed on the substrate 4 deteriorates. That is, since the SiO vapor-deposited film formed on the substrate 4 such as a plastic film is used for, for example, food packaging, it is required to have a gas barrier property and needs to be a vapor-deposited film having a low oxygen permeability or a low water vapor permeability. However, when CO gas is generated in the storage container 12, the degree of vacuum is lowered and the oxygen permeability becomes 10 times or more, so that it cannot be used as a product.

The present invention has been made in view of the above circumstances, and provides a sublimable substance vacuum vapor deposition apparatus capable of generating vaporized vapor of a vapor deposition substance by reducing the influence of gas generation of other components. The purpose is to prevent performance deterioration of the vapor deposition film.

[0010]

In order to achieve the above object, the structure of the present invention is a sublimable substance vacuum vapor deposition apparatus for depositing a sublimable substance, which is provided with a storage container surrounding and storing the vapor deposition substance. Is boron nitride or magnesium oxide, a lid having a slit-shaped nozzle having a cross-sectional area smaller than the evaporation area of the vapor deposition substance is provided on the storage container, and the lid is boron nitride or magnesium oxide, and the nozzle of the lid is The object to be heated is placed so as to surround the periphery of the object and the object to be heated is made of graphite.

[0011]

By installing the lid having the nozzle on the slit having a cross-sectional area smaller than the evaporation area in the storage container, the evaporated gas is accelerated in the nozzle portion and ejected at a uniform flow velocity in the width direction. By placing the object to be heated around the nozzle of the lid, the lid is directly radiantly heated through the object to be heated and the evaporation surface is radiatively heated from the lid, and the latent heat of evaporation is compensated for in the evaporation material. The part showing the highest temperature is the evaporation surface. Since the temperature of the nozzle is equal to or higher than the evaporation surface temperature, the evaporated vapor deposition material does not solidify on the inner surface of the nozzle. By using boron nitride or magnesium oxide for the container and the lid having the nozzle, the effect of gas generation of other components is reduced and vapor of sublimable substances such as SiO ₂ and SiO is generated.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. Figure 1
FIG. 3 is a cross section of a vapor deposition apparatus in a sublimable substance vacuum vapor deposition apparatus according to an embodiment of the present invention, FIG.
Shows the line III-III line arrow in FIG. The entire structure of the vacuum vapor deposition apparatus is the same as that shown in FIG. 4, and duplicate description is omitted.

The vapor deposition apparatus 20 shown in FIG.
A storage container 23 in which a vapor deposition material 22 as a vapor deposition material is stored is installed on the substrate 1. The storage container 23 is formed so as to surround the vapor deposition material 22. As the vapor deposition material 22, Si
A mixed pellet of O, Si and SiO ₂ is used. A lid 24 is installed on the top of the storage container 23, and the lid 24 has a slit-shaped nozzle 25 smaller than the evaporation area of the vapor deposition material 22.
Are formed. That is, the storage container 23 is the vapor deposition material 22.
The nozzle 25 of the lid 24 stores and evaporates
The evaporated evaporation material 22 is ejected. The material of the storage container 23 and the lid 24 is boron nitride (BN). still,
It is also possible to use magnesium oxide (MgO) as the material of the storage container 23 and the lid 24. The induction heated body 2 as a heated body surrounding the nozzle 25 of the lid 24
6 is installed, and the induction-heated body 26 is made of graphite. An induction heating coil 27 is provided outside the induction-heated body 26, and a heat insulating plate 28 covers the storage container 23, the lid 24, and the induction heating coil 27 around the induction-heated body 26. .

In the vacuum vapor deposition apparatus equipped with the vapor deposition apparatus 20 described above, the substrate 4 is wound around the cooling roll 5 and a large number of deflector rolls 6 after the inside of the vapor deposition chamber 1 reaches a predetermined vacuum degree by the exhaust pump unit 8. Thus, the reel 2 is wound from one reel 2 to the other reel 3 (see FIG. 4). Evaporation device 2
The object to be induction-heated 26 of 0 is induction-heated by the alternating magnetic field generated by the induction heating coil 27, and further, the lid 24 is radiantly-heated and the evaporation surface of the vapor deposition material 22 is radiatively-heated through the space in the storage container 23. The evaporation surface of the vapor deposition material 22 is radiatively heated to evaporate SiO, and the evaporated SiO has a uniform velocity distribution in the width direction of the substrate 4 (direction perpendicular to the paper surface in FIG. 1) by the nozzle 25 of the lid 24. Is ejected out of the storage container 23 and vapor-deposited on the substrate 4. The substrate 4 is vapor-deposited by the vapor deposition device 20 while being cooled on the cooling roll 5 so as to reduce the temperature rise due to heating during vapor deposition, and is wound on the reel 3.

When the SiO gas generated in the storage container 23 reacts with the induction-heated body 26 made of graphite, CO gas is generated and the degree of vacuum may be lowered. However, since the periphery of the vapor deposition material 22 is covered with the BN storage container 23 and the lid 24, the graphite-made induction-heated body 26 and S.
The iO gas does not react and CO gas is not generated to reduce the degree of vacuum. For this reason, the SiO vapor deposition film formed on the substrate 4 has a low oxygen permeability or a low water vapor permeability, and a sufficient gas barrier property is maintained to obtain a good quality vapor deposition film.

In the vacuum vapor deposition apparatus equipped with the vapor deposition apparatus 20 described above, since the lid 24 having the storage container 23 and the nozzle 25 is made of BN (or MgO), the influence of CO gas generation is reduced to reduce SiO ₂ , SiO, etc. The vapor of the sublimable substance can be generated, and a high-quality vapor deposition film can be obtained. As a result, SiO can be vapor-deposited uniformly in the width direction of the substrate 4 while maintaining high quality. Also, the lid 24
Since the nozzle 25 of the above is directly radiantly heated to face the induction-heated body 26, the temperature of the nozzle 25 is maintained above the evaporation surface temperature of the vapor deposition material 22, and the vaporized vapor deposition material is solidified on the inner surface of the nozzle 25. Never.

[0017]

Sublimable substance vacuum evaporation apparatus of the present invention according to the present invention, since the lid with the container and the nozzle was boron or magnesium oxide nitride, SiO _2, SiO and reduce the influence of other components of the gas generating It is possible to generate a vapor of a sublimable substance such as, and to obtain a vapor-deposited film of good quality.
As a result, the sublimable substance can be vapor-deposited uniformly in the width direction of the substrate while maintaining high quality, and the performance of the vapor-deposited film can be prevented from deteriorating. Further, since the nozzle of the lid faces the object to be heated and is directly radiatively heated, the temperature of the nozzle is maintained at the evaporation surface temperature of the vapor deposition material or higher, and the vaporized vapor deposition material does not solidify on the inner surface of the nozzle. .

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a vapor deposition device in a sublimable substance vacuum vapor deposition device according to an embodiment of the present invention.

FIG. 2 is a plan view of a vapor deposition device.

FIG. 3 is a view taken along the line III-III in FIG.

FIG. 4 is an overall configuration diagram of a vacuum vapor deposition device.

FIG. 5 is a cross-sectional view of a vapor deposition device 7.

FIG. 6 is a plan view of FIG.

FIG. 7 is a view taken along the line VII-VII in FIG.

[Explanation of symbols]

 1 Vapor Deposition Chamber 2, 3 Reel 4 Substrate 5 Cooling Roll 6 Deflector Roll 20 Vapor Deposition Device 22 Vapor Deposition Material 23 Storage Container 24 Lid 25 Slit 26 Induction Heater 27 Induction Heating Coil

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Susumu Kamikawa 4-22-6 Kannon Shinmachi, Nishi-ku, Hiroshima City, Hiroshima Prefecture Mitsubishi Heavy Industries Ltd. Hiroshima Works

Claims (1)

[Claims] 1. A sublimable substance vacuum vapor deposition apparatus for depositing a sublimable substance, comprising: a storage container surrounding and storing the vapor deposition substance, wherein the storage container is boron nitride or magnesium oxide. A lid having a slit-shaped nozzle having a small cross-sectional area is provided on the storage container, the lid is made of boron nitride or magnesium oxide, and a heated object is installed while surrounding the nozzle of the lid and the heated object. A vacuum deposition apparatus for sublimable substances, characterized in that graphite is used.