JPH07307411A - Ball grid array package - Google Patents
Ball grid array packageInfo
- Publication number
- JPH07307411A JPH07307411A JP6198341A JP19834194A JPH07307411A JP H07307411 A JPH07307411 A JP H07307411A JP 6198341 A JP6198341 A JP 6198341A JP 19834194 A JP19834194 A JP 19834194A JP H07307411 A JPH07307411 A JP H07307411A
- Authority
- JP
- Japan
- Prior art keywords
- grid array
- ball grid
- array package
- bonding material
- copper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 49
- 229920006332 epoxy adhesive Polymers 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 239000004593 Epoxy Substances 0.000 claims abstract description 6
- 239000004642 Polyimide Substances 0.000 claims abstract description 6
- 239000002390 adhesive tape Substances 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 40
- 230000017525 heat dissipation Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008642 heat stress Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 241000482268 Zea mays subsp. mays Species 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、剥離の生じにくいボー
ルグリッドアレイパッケージ（Ball Grid Array Packag
e ）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball grid array package
e) concerning.
【０００２】[0002]
【従来の技術】従来、ボールグリッドアレイパッケージ
は、たとえば図３に示すように形成されている。2. Description of the Related Art Conventionally, a ball grid array package is formed, for example, as shown in FIG.
【０００３】すなわち、プリント回路基板１上に、純粋
銅層、ニッケル−パラジウムメッキされた銅層あるいは
ニッケル−金メッキされた銅層からなるダイ（Die ）付
着用銅層２および銅伝導層３を形成する。That is, a die attachment copper layer 2 and a copper conductive layer 3 made of a pure copper layer, a nickel-palladium plated copper layer or a nickel-gold plated copper layer are formed on a printed circuit board 1. To do.
【０００４】また、ダイ付着用銅層２上に、エポキシ接
着剤４を塗布し、このエポキシ接着剤４上にチップ５を
貼着する。Further, an epoxy adhesive 4 is applied on the die attaching copper layer 2, and a chip 5 is attached on the epoxy adhesive 4.
【０００５】一方、銅伝導層３上にはソルダーレジスト
６が形成されるとともに、チップ５に接続される金線７
がワイヤーボンディングにより接続されている。On the other hand, a solder resist 6 is formed on the copper conductive layer 3 and a gold wire 7 connected to the chip 5 is formed.
Are connected by wire bonding.
【０００６】そして、プリント回路基板１のチップ５の
周囲には、パッケージ８がトリミング工程を経て形成さ
れ、プリント回路基板１の反対面には、赤外線を熱源と
し、炉内に加熱された空気および窒素ガスを供給する赤
外線リフロー（IR Reflow ）により、ソルダーボール９
が付着される。A package 8 is formed around the chip 5 of the printed circuit board 1 through a trimming process. On the opposite surface of the printed circuit board 1, infrared rays are used as a heat source and air heated in a furnace and Solder ball 9 by infrared reflow (IR Reflow) that supplies nitrogen gas
Is attached.
【０００７】[0007]
【発明が解決しようとする課題】上述のように、従来の
ボールグリッドアレイパッケージでは、チップ５をエポ
キシ接着剤４に貼着した後、資材の特性のため１５０℃
以上の高温を要求する工程を多数回経る必要があり、こ
のような工程を経る間は高温環境下にあるため資材にス
トレスが加わる。As described above, in the conventional ball grid array package, after the chip 5 is adhered to the epoxy adhesive 4, the temperature is 150 ° C. due to the characteristics of the material.
It is necessary to go through many steps requiring the above high temperature, and stress is applied to the material during the steps because it is in a high temperature environment.
【０００８】したがって、熱応力であるサーマルストレ
スが資材に加わり、たとえばパッケージ８とチップ５の
表面との接合面、チップ５とエポキシ接着剤４との接合
面、あるいは、エポキシ接着剤４とダイ付着用銅層２と
の接合面などにたとえば図４に示すように剥離層2aが生
じ剥離による隙間が生ずる。Therefore, thermal stress, which is thermal stress, is applied to the material, for example, the joint surface between the package 8 and the surface of the chip 5, the joint surface between the chip 5 and the epoxy adhesive 4, or the epoxy adhesive 4 and the die attachment. For example, as shown in FIG. 4, a peeling layer 2a is formed on a joint surface with the copper layer 2 for use, and a gap is generated by peeling.
【０００９】ところで、エポキシ接着剤４とダイ付着用
銅層２の接触境界面は、他の接合面に比べて接着力がか
なり落ちるため、表１に示すように、高温の工程を経る
間または信頼性試験過程を経る間に剥離が生じ、剥離さ
れた部分が膨れ上がり、周囲の材質でクラックが発生す
るいわゆるパプコーン（Pop-corn）現象が生じ、製品の
品質を急激に低下させ、製品の信頼性が低下するおそれ
がある問題を有している。By the way, the contact interface between the epoxy adhesive 4 and the die-attaching copper layer 2 has a significantly lower adhesive strength than the other joint surfaces, so as shown in Table 1, during the high temperature process or Peeling occurs during the reliability test process, the peeled part swells, cracks occur in the surrounding material, the so-called Pop-corn phenomenon occurs, the quality of the product deteriorates sharply, There is a problem that reliability may be reduced.
【００１０】[0010]
【表１】 本発明は、上記問題点に鑑みなされたもので、剥離の生
じにくいボールグリッドアレイパッケージを提供するこ
とを目的とする。[Table 1] The present invention has been made in view of the above problems, and an object of the present invention is to provide a ball grid array package in which peeling is less likely to occur.
【００１１】[0011]
【課題を解決するための手段】請求項１記載のボールグ
リッドアレイパッケージは、基板に形成されたダイ付着
用銅層上にエポキシ接着剤を設け、このエポキシ接着剤
上にチップを貼着したボールグリッドアレイパッケージ
において、前記ダイ付着用銅層および前記エポキシ接着
剤間に接合物質を介在させたものである。A ball grid array package according to claim 1, wherein an epoxy adhesive is provided on a die-attaching copper layer formed on a substrate, and a chip is stuck on the epoxy adhesive. In the grid array package, a bonding material is interposed between the die attachment copper layer and the epoxy adhesive.
【００１２】請求項２記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は伝導性であるものである。A ball grid array package according to a second aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is conductive.
【００１３】請求項３記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は非伝導性であるものである。A ball grid array package according to a third aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is non-conductive.
【００１４】請求項４記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、エポキシソルダーレジスト
であるものである。A ball grid array package according to a fourth aspect is the ball grid array package according to the first aspect, wherein the bonding material is an epoxy solder resist.
【００１５】請求項５記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、粘着テープであるものであ
る。A ball grid array package according to a fifth aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is an adhesive tape.
【００１６】請求項６記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、ポリイミドであるものであ
る。A ball grid array package according to a sixth aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is polyimide.
【００１７】請求項７記載のボールグリッドアレイパッ
ケージは、請求項１および４ないし６いずれか記載のボ
ールグリッドアレイパッケージにおいて、基板は、チッ
プが装着される面および他面を貫通する放熱通路が形成
され、接合物質は、貫通孔が穿設された非伝導性接合物
質であるものである。A ball grid array package according to a seventh aspect is the ball grid array package according to any one of the first and fourth to sixth aspects, in which the substrate has a heat radiation passage penetrating the surface on which the chip is mounted and the other surface. The bonding material is a non-conductive bonding material having through holes.
【００１８】[0018]
【作用】請求項１記載のボールグリッドアレイパッケー
ジは、ダイ付着用銅層およびエポキシ接着剤間に接合物
質を介在させたため、ダイ付着用銅層およびエポキシ接
着剤の接着力が増加し、剥離を防げる。In the ball grid array package according to the present invention, since the bonding material is interposed between the die-attaching copper layer and the epoxy adhesive, the adhesive force between the die-attaching copper layer and the epoxy adhesive increases and peeling occurs. Can be prevented.
【００１９】請求項２記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は伝導性であるため、ダイ付着
用銅層およびエポキシ接着剤間で、熱的および電気的伝
導が得られる。A ball grid array package according to a second aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is conductive, so that thermal and electrical properties are provided between the die attach copper layer and the epoxy adhesive. It is possible to obtain specific conduction.
【００２０】請求項３記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は非伝導性であるため、ダイ付
着用銅層およびエポキシ接着剤間で、熱的および電気的
伝導を防げる。A ball grid array package according to a third aspect of the present invention is the same as the ball grid array package according to the first aspect, wherein the bonding material is non-conductive, so that the thermal bonding between the die attachment copper layer and the epoxy adhesive is Prevents electrical conduction.
【００２１】請求項４記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、エポキシソルダーレジスト
であるため、ダイ付着用銅層およびエポキシ接着剤間
で、熱的および電気的伝導が得られる。The ball grid array package according to a fourth aspect is the ball grid array package according to the first aspect, wherein the bonding material is an epoxy solder resist, so that the thermal bonding between the copper layer for die attachment and the epoxy adhesive is performed. And electrical conduction is obtained.
【００２２】請求項５記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、粘着テープであるため、ダ
イ付着用銅層およびエポキシ接着剤間で、熱的および電
気的伝導が得られる。The ball grid array package according to a fifth aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is an adhesive tape, and therefore, the copper layer for die attachment and the epoxy adhesive are thermally and Electrical conduction is obtained.
【００２３】請求項６記載のボールグリッドアレイパッ
ケージは、請求項１記載のボールグリッドアレイパッケ
ージにおいて、接合物質は、ポリイミドであるため、ダ
イ付着用銅層およびエポキシ接着剤間で、熱的および電
気的伝導が得られる。The ball grid array package according to a sixth aspect of the present invention is the ball grid array package according to the first aspect, wherein the bonding material is polyimide, so that thermal and electrical properties are provided between the copper layer for die attachment and the epoxy adhesive. It is possible to obtain specific conduction.
【００２４】請求項７記載のボールグリッドアレイパッ
ケージは、請求項１および４ないし６いずれか記載のボ
ールグリッドアレイパッケージにおいて、接合物質は貫
通孔が穿設された非伝導性接合物質であるため、貫通孔
を介してダイ付着用銅層およびエポキシ接着剤間で、熱
的および電気的伝導が得られ、基板はチップが装着され
る面および他面を貫通する放熱通路を有するため、確実
に放熱できる。The ball grid array package according to claim 7 is the ball grid array package according to any one of claims 1 and 4 to 6, wherein the bonding material is a non-conductive bonding material having through holes. Thermal and electrical conduction is obtained between the copper layer for die attachment and the epoxy adhesive through the through holes, and the board has a heat dissipation passage that penetrates the surface on which the chip is mounted and the other surface, ensuring reliable heat dissipation. it can.
【００２５】[0025]
【実施例】以下、本発明のボールグリッドアレイパッケ
ージの一実施例を図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the ball grid array package of the present invention will be described below with reference to the drawings.
【００２６】図１に示すように、プリント回路基板11上
に、ダイ（Die ）付着用銅層12を形成する。As shown in FIG. 1, a copper layer 12 for die attachment is formed on a printed circuit board 11.
【００２７】また、ダイ付着用銅層12上に、エポキシソ
ルダーレジスト（Epoxy Solder resist ）、ポリイミド
（Polyimid）、または、接着テープなどの強力接合物質
13を設ける。なお、この強力接合物質13は、熱的および
電気的の伝導性と非伝導性とがいずれも使用可能である
が、非伝導性材料を使う場合にはエポキシ接着剤15とダ
イ付着用銅層12とを互いに連結するために貫通孔14を形
成して、電気的に通電可能にするとともに熱的に伝導可
能にする。そして、この強力接合物質13上にエポキシ接
着剤15を塗布し、このエポキシ接着剤15上にチップ16を
貼着する。On the die-attaching copper layer 12, a strong bonding material such as epoxy solder resist, polyimide, or adhesive tape.
Provide 13. The strong bonding substance 13 is capable of both thermal and electrical conductivity and non-conductivity, but when a non-conducting material is used, the epoxy adhesive 15 and the die attachment copper layer are used. Through holes 14 are formed to connect 12 and 12 to each other so that they can be electrically conducted and thermally conducted. Then, the epoxy adhesive 15 is applied onto the strong bonding material 13, and the chip 16 is attached onto the epoxy adhesive 15.
【００２８】また、基板（ＰＷＢ：Printed Wiring Boa
rd）上の配線密度を上げるためには、たとえばダイ付着
用銅層12上に同じ面積の中で多くのＩ／Ｏ（IN/OUT）ピ
ンを設ける、すなわち密度を高くする必要があり、強力
接合物質13に非伝導性材料を用いることにより、ダイ付
着用銅層12のＩ／Ｏピン間の通電を確実に防止できる。
一方、強力接合物質13に熱的伝導性を有するものを使用
すれば、チップ16から発生する熱をプリント回路基板11
側に効果的に伝達することができ、電気的伝導性を有す
るものを使用すれば、チップ16の電気的接地（Ground）
を得ることができる。なお、強力接合物質13が熱的伝導
性を有さないものであっても、貫通孔14により熱をプリ
ント回路基板11方向に伝達することができ、電気的な伝
導性を有さないものであっても貫通孔14により電気的接
地を得ることができる。A substrate (PWB: Printed Wiring Boa)
In order to increase the wiring density on rd), it is necessary to provide a large number of I / O (IN / OUT) pins in the same area on the die attachment copper layer 12, that is, to increase the density. By using a non-conductive material for the bonding substance 13, it is possible to reliably prevent the conduction between the I / O pins of the die attachment copper layer 12.
On the other hand, if the strong bonding material 13 having thermal conductivity is used, the heat generated from the chip 16 is generated.
If it is electrically conductive, it can be effectively transmitted to the side, and the electrical ground of the chip 16 (Ground)
Can be obtained. Even if the strong bonding material 13 does not have thermal conductivity, heat can be transferred to the printed circuit board 11 through the through holes 14 and it does not have electrical conductivity. Even if there is, it is possible to obtain electrical grounding through the through hole 14.
【００２９】さらに、プリント回路基板11のチップ16の
周囲には、パッケージ17がトリミング工程を経て形成さ
れている。Further, a package 17 is formed around the chip 16 of the printed circuit board 11 through a trimming process.
【００３０】上記実施例によれば、エポキシ接着剤15と
ダイ付着用銅層12間に、強力接合物質13を設けることに
より、熱的不調和により発生する熱応力を吸収して熱変
形による剥離を防止してエポキシ接着剤15とダイ付着用
銅層12との接着力を確実に増加できる。According to the above embodiment, the strong bonding material 13 is provided between the epoxy adhesive 15 and the die-attaching copper layer 12 to absorb the thermal stress generated by the thermal incompatibility and peel off due to the thermal deformation. And the adhesive force between the epoxy adhesive 15 and the die-attaching copper layer 12 can be reliably increased.
【００３１】さらに、図２に示すように、プリント回路
基板11の厚さ方向、すなわちチップ16側と他面側との間
の方向を連通する放熱通路18を穿設してもよく、この放
熱通路18の他面側に、赤外線を熱源とし、炉内に加熱さ
れた空気および窒素ガスを供給する赤外線リフロー（IR
Reflow ）により、ソルダーボール19を付着してもよ
い。Further, as shown in FIG. 2, a heat radiation passage 18 may be provided to connect the thickness direction of the printed circuit board 11, that is, the direction between the chip 16 side and the other surface side. Infrared reflow (IR) that supplies the heated air and nitrogen gas into the furnace using infrared rays as the heat source on the other side of the passage 18.
The solder balls 19 may be attached by Reflow).
【００３２】また、この図２に示す実施例によれば、強
力接合物質13に熱的伝導性を有する物質を用いた場合、
強力接合物質13から貫通孔14を介してチップ16からの熱
は、ダイ付着用銅層12に伝達される。Further, according to the embodiment shown in FIG. 2, when the strong bonding substance 13 is a substance having thermal conductivity,
The heat from the chip 16 from the strong bonding material 13 through the through holes 14 is transferred to the die attachment copper layer 12.
【００３３】さらに、放熱通路18により、ダイ付着用銅
層12から放熱通路18を通じて抜け出るように強力接合物
質13に多数の貫通孔14を形成する。Further, through the heat dissipation passage 18, a large number of through holes 14 are formed in the strong bonding material 13 so as to escape from the die attaching copper layer 12 through the heat dissipation passage 18.
【００３４】またさらに、強力接合物質13に熱的に非伝
導性のものを用いて熱伝導が高くない場合にも、貫通孔
14を介して放熱を行なうことができる。Further, even if the strong bonding material 13 is a thermally non-conductive material and the thermal conductivity is not high, the through hole
Heat can be dissipated via 14.
【００３５】上記実施例を用いた資材の温度８５℃で湿
度３０％、温度３０℃で湿度６０％における信頼性検査
結果を表２に示す。Table 2 shows the reliability test results of the materials used in the above examples at a temperature of 85 ° C. and a humidity of 30% and at a temperature of 30 ° C. and a humidity of 60%.
【００３６】[0036]
【表２】 従来例を示す表１の結果では、温度８５℃で湿度３０
％、温度３０℃で湿度６０％のいずれの場合にも、１時
間でサンプル１０個のすべてに剥離が生ずるとともに、
９６時間経過後に同様にサンプル１０個のすべてにパプ
コーン（Pop-corn）が発生しているのに対し、上記実施
例を用いた表２の結果でも、いずれの場合にも１６８時
間経過後でも剥離およびパプコーンが生じない。[Table 2] The result of Table 1 showing the conventional example shows that the temperature is 85 ° C. and the humidity is 30.
%, At a temperature of 30 ° C. and a humidity of 60%, peeling occurred in all 10 samples in 1 hour,
Similarly, after the lapse of 96 hours, pop-corn was generated in all of the 10 samples, while in the results of Table 2 using the above-mentioned examples, peeling was observed even after 168 hours in all cases. And no papcorns.
【００３７】[0037]
【発明の効果】請求項１記載のボールグリッドアレイパ
ッケージによれば、ダイ付着用銅層およびエポキシ接着
剤間に接合物質を介在させたため、ダイ付着用銅層およ
びエポキシ接着剤の接着力が増加し、剥離を防ぐことが
できる。According to the ball grid array package of the present invention, since the bonding material is interposed between the die attaching copper layer and the epoxy adhesive, the adhesive force between the die attaching copper layer and the epoxy adhesive is increased. And peeling can be prevented.
【００３８】請求項２記載のボールグリッドアレイパッ
ケージによれば、請求項１記載のボールグリッドアレイ
パッケージに加え、接合物質は伝導性であるため、ダイ
付着用銅層およびエポキシ接着剤間で、熱的および電気
的伝導が得られ、通電および放熱が可能である。According to the ball grid array package of the second aspect, in addition to the ball grid array package of the first aspect, since the bonding material is conductive, heat is not applied between the die attachment copper layer and the epoxy adhesive. Electrical and electrical conduction is obtained, and electricity and heat can be dissipated.
【００３９】請求項３記載のボールグリッドアレイパッ
ケージによれば、請求項１記載のボールグリッドアレイ
パッケージに加え、接合物質は非伝導性であるため、ダ
イ付着用銅層およびエポキシ接着剤間で、熱的および電
気的伝導が得られないが、非伝導性も用いることができ
る。According to the ball grid array package of the third aspect, in addition to the ball grid array package of the first aspect, since the bonding material is non-conductive, between the copper layer for die attachment and the epoxy adhesive, No thermal and electrical conduction is obtained, but non-conductivity can also be used.
【００４０】請求項４記載のボールグリッドアレイパッ
ケージによれば、請求項１記載のボールグリッドアレイ
パッケージに加え、接合物質は、エポキシソルダーレジ
ストであるため、ダイ付着用銅層およびエポキシ接着剤
間で、熱的および電気的伝導が得られ、通電および放熱
が可能である。According to the ball grid array package of the fourth aspect, in addition to the ball grid array package of the first aspect, since the bonding material is an epoxy solder resist, the bonding between the copper layer for die attachment and the epoxy adhesive is performed. , Thermal and electrical conduction is obtained, and electricity and heat can be dissipated.
【００４１】請求項５記載のボールグリッドアレイパッ
ケージによれば、請求項１記載のボールグリッドアレイ
パッケージに加え、接合物質は、粘着テープであるた
め、ダイ付着用銅層およびエポキシ接着剤間で、熱的お
よび電気的伝導が得られ、通電および放熱が可能であ
る。According to the ball grid array package of the fifth aspect, in addition to the ball grid array package of the first aspect, since the bonding material is an adhesive tape, between the copper layer for die attachment and the epoxy adhesive, Thermal and electrical conduction is obtained, and electricity and heat can be dissipated.
【００４２】請求項６記載のボールグリッドアレイパッ
ケージによれば、請求項１記載のボールグリッドアレイ
パッケージに加え、接合物質は、ポリイミドであるた
め、ダイ付着用銅層およびエポキシ接着剤間で、熱的お
よび電気的伝導が得られ、通電および放熱が可能であ
る。According to the ball grid array package of the sixth aspect, in addition to the ball grid array package of the first aspect, since the bonding material is polyimide, heat is applied between the die attaching copper layer and the epoxy adhesive. Electrical and electrical conduction is obtained, and electricity and heat can be dissipated.
【００４３】請求項７記載のボールグリッドアレイパッ
ケージによれば、請求項１および４ないし６いずれか記
載のボールグリッドアレイパッケージに加え、接合物質
は貫通孔が穿設された非伝導性接合物質であるため、貫
通孔を介してダイ付着用銅層およびエポキシ接着剤間
で、熱的および電気的伝導が得られ、基板はチップが装
着される面および他面を貫通する放熱通路を有するた
め、確実に放熱できる。According to the ball grid array package of the seventh aspect, in addition to the ball grid array package according to any of the first and fourth to sixth aspects, the bonding material is a non-conductive bonding material having through holes. Therefore, thermal and electrical conduction can be obtained between the copper layer for die attachment and the epoxy adhesive through the through hole, and since the substrate has a heat dissipation passage that penetrates the surface on which the chip is mounted and the other surface, It can reliably dissipate heat.
【図１】本発明の一実施例のボールグリッドアレイパッ
ケージを示す断面図である。FIG. 1 is a sectional view showing a ball grid array package according to an embodiment of the present invention.
【図２】同上他の実施例のボールグリッドアレイパッケ
ージを示す断面図である。FIG. 2 is a sectional view showing a ball grid array package of another embodiment of the same as above.
【図３】従来例のボールグリッドアレイパッケージを示
す断面図である。FIG. 3 is a cross-sectional view showing a conventional ball grid array package.
【図４】同上エポキシ接着剤とダイ付着用銅層間に剥離
層が生ずる状態のボールグリッドアレイパッケージを示
す断面図である。FIG. 4 is a cross-sectional view showing a ball grid array package in which a release layer is formed between the epoxy adhesive and the copper layer for die attachment.
11 プリント回路基板 12 ダイ付着用銅層 13 強力接合物質 14 貫通孔 15 エポキシ接着剤 16 チップ 18 放熱通路 11 Printed circuit board 12 Copper layer for die attachment 13 Strong bonding material 14 Through hole 15 Epoxy adhesive 16 Chip 18 Heat dissipation passage
Claims (7)
ポキシ接着剤を設け、このエポキシ接着剤上にチップを
貼着したボールグリッドアレイパッケージにおいて、 前記ダイ付着用銅層および前記エポキシ接着剤間に接合
物質を介在させたことを特徴とするボールグリッドアレ
イパッケージ。1. A ball grid array package in which an epoxy adhesive is provided on a die-attaching copper layer formed on a substrate, and a chip is attached to the epoxy adhesive, wherein the die-attaching copper layer and the epoxy adhesive are provided. A ball grid array package characterized in that a bonding material is interposed between the agents.
る請求項１記載のボールグリッドアレイパッケージ。2. The ball grid array package according to claim 1, wherein the bonding material is conductive.
する請求項１記載のボールグリッドアレイパッケージ。3. The ball grid array package according to claim 1, wherein the bonding material is non-conductive.
であることを特徴とする請求項１記載のボールグリッド
アレイパッケージ。4. The ball grid array package according to claim 1, wherein the bonding material is an epoxy solder resist.
徴とする請求項１記載のボールグリッドアレイパッケー
ジ。5. The ball grid array package according to claim 1, wherein the bonding material is an adhesive tape.
徴とする請求項１記載のボールグリッドアレイパッケー
ジ。6. The ball grid array package according to claim 1, wherein the bonding material is polyimide.
面を貫通する放熱通路が形成され、 接合物質は、貫通孔が穿設された非伝導性接合物質であ
ることを特徴とする請求項１および４ないし６いずれか
記載のボールグリッドアレイパッケージ。7. The substrate is provided with a heat dissipation passage that penetrates a surface on which the chip is mounted and the other surface, and the bonding material is a non-conductive bonding material having a through hole formed therein. Item 7. A ball grid array package according to any one of items 1 and 4 to 6.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940002982A KR0131392B1 (en) | 1994-02-19 | 1994-02-19 | Ball grid array package |
| KR1994/P2982 | 1994-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07307411A true JPH07307411A (en) | 1995-11-21 |
Family
ID=19377442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6198341A Pending JPH07307411A (en) | 1994-02-19 | 1994-08-23 | Ball grid array package |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07307411A (en) |
| KR (1) | KR0131392B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065039A (en) * | 1996-08-13 | 1998-03-06 | Sony Corp | Semiconductor device |
-
1994
- 1994-02-19 KR KR1019940002982A patent/KR0131392B1/en not_active IP Right Cessation
- 1994-08-23 JP JP6198341A patent/JPH07307411A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR0131392B1 (en) | 1998-04-14 |
| KR950025938A (en) | 1995-09-18 |
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