JPH0729946A - Wafer prober - Google Patents

Wafer prober

Info

Publication number
JPH0729946A
JPH0729946A JP19554393A JP19554393A JPH0729946A JP H0729946 A JPH0729946 A JP H0729946A JP 19554393 A JP19554393 A JP 19554393A JP 19554393 A JP19554393 A JP 19554393A JP H0729946 A JPH0729946 A JP H0729946A
Authority
JP
Japan
Prior art keywords
wafer
needle
measurement
measured
measurement board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19554393A
Other languages
Japanese (ja)
Inventor
Shigeru Suzuki
滋 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19554393A priority Critical patent/JPH0729946A/en
Publication of JPH0729946A publication Critical patent/JPH0729946A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature

Abstract

PURPOSE:To optimize the pin pressure of a measurement board in the actual state of measurement, and inspect the measurement board with high precision. CONSTITUTION:In order to measure the length of a pin trace formed on an electrode pad (j) of a chip (i) to be measured after probing, a recognition area (h) provided with a CCD camera (e) and a recognition apparatus (f) is installed. A controller (g) is installed which measures the length of a pin trace for all electrode pads, judges it by previously set specifications, adjusts the height of a measurement board (d) on the basis of judgement, and automatically executes pin pressure adjustment.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はウェハープローバーに関
するものである。
FIELD OF THE INVENTION The present invention relates to a wafer prober.

【0002】[0002]

【従来の技術】従来のウェハープローバーは図5に示す
ように測定ボードPの針oとコンタクトチェック用ウェ
ハーmが電気的に導通しているかどうかをチェックする
コンタクトチェック用測定器Qと測定結果に基づき測定
ボードPの高さを調整するコントローラを有している
(例えば特開昭63−166242号)。次にこの動作
について説明する。測定ステージn上に固定されたコン
タクトチェック用ウェハーmに対して、針oを取付けた
測定ボードPの高さを一定量のステップで徐々に下げて
いき、ステップ毎に、コンタクトチェック用測定器Qを
用いて針oとウェハーmの電気的導通を測定する。測定
結果として針oが全てショート状態になるまで測定ボー
ドPの降下量の増加、導通測定を繰り返す。以上の作業
をコントローラRを使用して自動で制御を行う。全ての
針oがショート状態になった測定ボードPの高さを記憶
しておき、コンタクトチェック用ウェハーではない被測
定ウェハーを測定する場合は、その高さよりさらに予じ
め設定された量だけ余分に下げて、針oと被測定ウェハ
ーの接触を確実となるように制御する。図6は以上の動
作フローを図にして示したものである。
2. Description of the Related Art A conventional wafer prober has a contact check measuring device Q for checking whether or not a needle o of a measuring board P and a contact check wafer m are electrically connected to each other as shown in FIG. It has a controller for adjusting the height of the measuring board P based on the above (for example, Japanese Patent Laid-Open No. 63-166242). Next, this operation will be described. With respect to the contact check wafer m fixed on the measurement stage n, the height of the measurement board P to which the needle o is attached is gradually lowered in a fixed amount of steps, and the contact check measuring device Q is provided for each step. Is used to measure the electrical continuity between the needle o and the wafer m. As a result of the measurement, the increase in the amount of drop of the measurement board P and the continuity measurement are repeated until all the needles o are short-circuited. The above work is automatically controlled using the controller R. When the height of the measurement board P in which all the needles o are short-circuited is memorized and a wafer to be measured which is not a contact check wafer is measured, a predetermined amount of excess is added to the height. The contact point between the needle o and the wafer to be measured is controlled to ensure contact. FIG. 6 is a diagram showing the above operation flow.

【0003】[0003]

【発明が解決しようとする課題】この従来のウェハープ
ローバーでは、針圧調整にコンタクトチェック専用のウ
ェハーを使用しなければならず、被測定ウェハーの種類
が異なる場合、その都度あらかじめコンタクトチェック
用ウェハーを準備しておかなければならない問題点があ
った。また、従来のウェハープローバーでは、針圧調整
を針とチェック用ウェハーの電気的導通のオープン、シ
ョートで判定して行っているため、測定ボードの針の高
さ方向のバラツキを考慮に入れた微調ができず、また、
測定ボードの針の摩耗、曲がりなどの不具合管理が精度
良くできないという問題点があった。
In this conventional wafer prober, a wafer dedicated to contact check must be used for adjusting the stylus pressure, and if the type of the wafer to be measured is different, the wafer for contact check is to be prepared in advance each time. There was a problem that had to be prepared. Also, in the conventional wafer prober, the stylus pressure is adjusted by determining whether the electrical connection between the stylus and the checking wafer is open or short.Therefore, the fine adjustment that considers the variation in the height direction of the stylus on the measurement board is taken into consideration. I can not do it again,
There is a problem in that it is not possible to accurately manage defects such as wear and bending of the needles on the measurement board.

【0004】[0004]

【課題を解決するための手段】本発明は、針のついた測
定ボードを半導体ウェハーに接触させて試験を行なうウ
ェハープローバーと、プロービング後のチップ電極パッ
ドの針跡の長さを測定する認識装置と、測定した針跡の
長さをあらかじめ設定した規格値により判定し、判定結
果に基づき被測定ウェハーに対する測定ボードの針先の
高さを自動で制御するコントローラを備えたウェハープ
ローバーである。
SUMMARY OF THE INVENTION The present invention is a wafer prober for conducting a test by bringing a measuring board having a needle into contact with a semiconductor wafer, and a recognition device for measuring the length of a needle trace of a chip electrode pad after probing. And a controller for automatically determining the height of the needle tip of the measurement board with respect to the wafer to be measured based on the determination result of the measured length of the needle trace based on a preset standard value.

【0005】[0005]

【作用】本発明においては、ウェハープローバーは、実
際に特性チェックを行う被測定ウェハーの任意チップ電
極パッド上のプロービング跡をモニターするCCDカメ
ラと、モニターされた画像からプロービンクによる針跡
の長さを認識する認識装置と、認識装置の自動制御及
び、認識結果をあらかじめ設定した規格値に基づき判定
し、測定ボードの高さを自動で調整するものである。
In the present invention, the wafer prober is a CCD camera for monitoring the probing trace on the arbitrary chip electrode pad of the wafer to be measured for actually performing the characteristic check, and the length of the probe trace by the probe marking from the monitored image. A recognition device for recognition, automatic control of the recognition device, and determination of the recognition result based on preset standard values, and the height of the measurement board is automatically adjusted.

【0006】[0006]

【実施例】次に本発明の実施例について図面を参照して
説明する。 〔実施例1〕図1の(A)(B)、及び図2の(C)は
本発明の一実施例によるウェハープローバーの針圧調整
方法を示した構成図であり、図3及び図4は実際の針圧
調整作業のフローチャートである。図1の(A)(B)
において、実際に特性チェックを行う被測定ウェハーa
を測定ステージbの上に固定し、測定ボードdに取付け
られた針cとウェハー上の任意の被測定チップiの電極
パッドjとのX,Y,Q調整を行い、相互の位置合わせ
を行う。その後、測定ボードdに取付けられたエッジセ
ンサを用いて測定ボードdの高さの粗調整を行い、測定
ボードdの設計値に基づきオーバードライブ量の初期値
を加えてコンタクト状態にする。その後、測定ステージ
bを認識エリアhに移動させ、電極パッドj上のプロー
ビング後の針跡kの長さlをCCDカメラe、認識装置
fを用いて測定する。測定結果については、図2の
(c)に示すようにあらかじめ判定用の規格値を設定し
ておき、全電極パッドの針跡の長さの分布が規格値内に
収まるようにコントローラgを使用して測定ボードdの
オーバードライブ量を自動で調整する。具体的に説明す
ると、図3、図4のフローチャートに示すように、まず
オーバードライブ量の初期値を設定し、得られたプロー
ビング後の針跡の長さを測定し予め設定された規格値と
比較する。この時、規格の上限のみNG判定の場合、オ
ーバードライブ量を減少させて別のチップにプロービン
グし、その時の針跡の長さを測定し再度規格値と比較す
る。上記作業を繰返し全てのプローブの針跡の長さが規
格内に納まるまで調整を繰返す。逆に規格の下限のみN
G判定の場合、オーバードライブ量を増加させて別のチ
ップにプロービングし、その時の針跡の長さを測定し規
格値と比較する。上記作業を繰返し、全てのプローブの
針跡の長さが規格内に納まるまで調整を繰返す。以上の
方法でプローブカードのオーバードライブ量の調整を自
動で行う。
Embodiments of the present invention will now be described with reference to the drawings. [Embodiment 1] FIGS. 1A and 1B and FIG. 2C are configuration diagrams showing a needle pressure adjusting method for a wafer prober according to an embodiment of the present invention, and FIGS. Is a flowchart of the actual stylus pressure adjustment work. 1A and 1B
Wafer a to be actually checked in
Is fixed on the measurement stage b, and the needle c attached to the measurement board d and the electrode pad j of an arbitrary chip to be measured i on the wafer are adjusted in X, Y and Q to perform mutual alignment. . After that, the height of the measurement board d is roughly adjusted using the edge sensor attached to the measurement board d, and the initial value of the overdrive amount is added based on the design value of the measurement board d to bring the contact state. After that, the measurement stage b is moved to the recognition area h, and the length l of the probe mark k after probing on the electrode pad j is measured using the CCD camera e and the recognition device f. As for the measurement result, a standard value for determination is set in advance as shown in FIG. 2 (c), and the controller g is used so that the distribution of the lengths of the needle marks of all the electrode pads falls within the standard value. Then, the overdrive amount of the measurement board d is automatically adjusted. More specifically, as shown in the flowcharts of FIGS. 3 and 4, first, the initial value of the overdrive amount is set, the length of the obtained needle trace after probing is measured, and the preset standard value is set. Compare. At this time, if only the upper limit of the standard is determined to be NG, the overdrive amount is reduced and probing is performed on another chip, and the length of the needle trace at that time is measured and compared again with the standard value. The above operation is repeated, and the adjustment is repeated until the lengths of the needle marks of all the probes are within the standard. Conversely, only the lower limit of the standard is N
In the case of G determination, the amount of overdrive is increased and probing is performed on another chip, and the length of the needle trace at that time is measured and compared with the standard value. The above work is repeated, and the adjustment is repeated until the lengths of the needle marks of all the probes are within the standard. The above method automatically adjusts the overdrive amount of the probe card.

【0007】〔実施例2〕実施例1で示した動作で、認
識結果の規格値に対する判定ルーチンでそれを図3及び
図4に示す。規格の上限、下限が共に不良となった時に
測定ボードの針の配列不良とすることで測定ボードの良
・不良を自動で判定する。具体的に説明すると、図3、
図4のフローチャートに示すように、まずオーバードラ
イブ量の初期値を設定し、得られたプロービング後の針
跡の長さを測定し予め設定された規格値と比較する。こ
の時、規格の上限、下限共にNGの場合、また規格の上
限NGで調整後に下限NGとなった場合、さらに下限N
Gで調整後上限NGとなった場合は、測定ボードの不良
とみなし、測定ボードの交換を指示する。
[Embodiment 2] FIG. 3 and FIG. 4 show a judgment routine for the standard value of the recognition result in the operation shown in the first embodiment. When both the upper and lower limits of the standard are defective, the needle arrangement of the measuring board is determined to be defective, so that the quality of the measuring board is automatically determined. Specifically, FIG.
As shown in the flowchart of FIG. 4, first, the initial value of the overdrive amount is set, and the length of the obtained needle trace after probing is measured and compared with a preset standard value. At this time, when both the upper limit and the lower limit of the standard are NG, or when the lower limit NG is reached after adjustment at the upper limit NG of the standard, the lower limit N is further decreased.
If the upper limit is NG after adjustment with G, the measurement board is considered defective and an instruction to replace the measurement board is issued.

【0008】[0008]

【発明の効果】以上説明したように本発明によれば、被
測定チップの電極パッドの針跡を認識し、その長さから
測定ボードのオーバードライブ量を調整し、針圧調整を
行うことができるようにしたので、針圧調整用に専用の
チェックウェハーを用意する必要がなく、かつ実際の測
定状態において針圧の最適化ができる効果を有する。さ
らに、測定ボードの全ての針についてそのバラツキを設
定された規格値に基づき定量的に管理できるようにした
ので、針圧の微調が可能となると共に、プローブカード
の検査も高精度に行うことができる効果を有するもので
ある。
As described above, according to the present invention, it is possible to recognize the needle trace of the electrode pad of the chip to be measured, adjust the overdrive amount of the measurement board from the length thereof, and adjust the needle pressure. Since this is possible, it is not necessary to prepare a dedicated check wafer for adjusting the stylus pressure, and the stylus pressure can be optimized in the actual measurement state. Furthermore, since it is possible to quantitatively manage the variation of all the needles on the measurement board based on the set standard value, it is possible to finely adjust the needle pressure and to perform the probe card inspection with high accuracy. It has an effect that can be done.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の構成図でA図は装置構成
図、B図は認識される針跡の図。
FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. A is a device configuration diagram, and B is a diagram of recognized needle marks.

【図2】本発明の一実施例の構成図で(C)は実施例に
基づく判定方法を示す図。
FIG. 2 is a configuration diagram of an embodiment of the present invention, and (C) is a diagram showing a determination method based on the embodiment.

【図3】本発明の実施例の作業のフローチャートで図4
に続く一部。
FIG. 3 is a flow chart of the operation of the embodiment of the present invention.
Part following.

【図4】本発明の実施例の作業のフローチャートで図3
から続く一部。
FIG. 4 is a flowchart of the work of the embodiment of the present invention.
Part that continues from.

【図5】従来のウェハープローバーの構成図。FIG. 5 is a configuration diagram of a conventional wafer prober.

【図6】従来の動作を示すフローチャート。FIG. 6 is a flowchart showing a conventional operation.

【符号の説明】[Explanation of symbols]

a 被測定ウェハー b 測定ステージ c 針 d 測定ボード e CCDカメラ f 認識装置 g コントローラ h 認識エリア i 被測定チップ j 電極パッド k プロービング後の針跡 l 針跡の長さ m コンタクトチェック用ウェハー n 測定ステージ o 針 P 測定ステージ Q コンタクトチェック用測定器 R コントローラ a wafer to be measured b measurement stage c needle d measurement board e CCD camera f recognition device g controller h recognition area i measured chip j electrode pad k needle trace after probing l needle trace length m wafer for contact check n measurement stage o Needle P Measuring stage Q Measuring device for contact check R Controller

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 針のついた測定ボードを半導体ウェハー
に接触させて試験を行なうウェハープローバーとプロー
ビング後のチップ電極パッドの針跡の長さを測定する認
識装置と、測定した針跡の長さをあらかじめ設定した規
格値により判定し、判定結果に基づき被測定ウェハーに
対する測定ボードの針先の高さを自動で制御するコント
ローラを備えたことを特徴とするウェハープローバー。
1. A wafer prober for conducting a test by bringing a measuring board with a needle into contact with a semiconductor wafer, a recognition device for measuring the length of the needle trace on a chip electrode pad after probing, and the length of the measured needle trace. The wafer prober is equipped with a controller for automatically controlling the height of the probe tip of the measurement board with respect to the wafer to be measured based on the determination result.
【請求項2】 認識装置による判定結果で測定ボードの
良・不良を判断させる機能を有することを特徴とする請
求項1記載のウェハープローバー。
2. The wafer prober according to claim 1, wherein the wafer prober has a function of judging whether the measurement board is good or bad based on the judgment result by the recognition device.
JP19554393A 1993-07-13 1993-07-13 Wafer prober Pending JPH0729946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19554393A JPH0729946A (en) 1993-07-13 1993-07-13 Wafer prober

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19554393A JPH0729946A (en) 1993-07-13 1993-07-13 Wafer prober

Publications (1)

Publication Number Publication Date
JPH0729946A true JPH0729946A (en) 1995-01-31

Family

ID=16342851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19554393A Pending JPH0729946A (en) 1993-07-13 1993-07-13 Wafer prober

Country Status (1)

Country Link
JP (1) JPH0729946A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7477064B2 (en) 2005-03-28 2009-01-13 Tokyo Electron Limited Probing apparatus and positional deviation acquiring method
JP2014092444A (en) * 2012-11-02 2014-05-19 Honda Motor Co Ltd Semiconductor element inspection device and inspection method
CN104034737A (en) * 2014-06-13 2014-09-10 上海华岭集成电路技术股份有限公司 Method for detecting testability of three-dimensional chip
CN104897687A (en) * 2015-05-27 2015-09-09 上海华力微电子有限公司 Detection system and method for needle mark position of probe

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162177A (en) * 1987-12-18 1989-06-26 Tokyo Electron Ltd Probing method
JPH0536765A (en) * 1991-07-31 1993-02-12 Nec Corp Prober

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162177A (en) * 1987-12-18 1989-06-26 Tokyo Electron Ltd Probing method
JPH0536765A (en) * 1991-07-31 1993-02-12 Nec Corp Prober

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7477064B2 (en) 2005-03-28 2009-01-13 Tokyo Electron Limited Probing apparatus and positional deviation acquiring method
JP2014092444A (en) * 2012-11-02 2014-05-19 Honda Motor Co Ltd Semiconductor element inspection device and inspection method
CN104034737A (en) * 2014-06-13 2014-09-10 上海华岭集成电路技术股份有限公司 Method for detecting testability of three-dimensional chip
CN104034737B (en) * 2014-06-13 2017-01-18 上海华岭集成电路技术股份有限公司 Method for detecting testability of three-dimensional chip
CN104897687A (en) * 2015-05-27 2015-09-09 上海华力微电子有限公司 Detection system and method for needle mark position of probe
CN104897687B (en) * 2015-05-27 2018-02-27 上海华力微电子有限公司 The detecting system and method for probe pin trace position

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