JPH07294607A - Driver circuit for semiconductor testing apparatus - Google Patents
Driver circuit for semiconductor testing apparatusInfo
- Publication number
- JPH07294607A JPH07294607A JP6113539A JP11353994A JPH07294607A JP H07294607 A JPH07294607 A JP H07294607A JP 6113539 A JP6113539 A JP 6113539A JP 11353994 A JP11353994 A JP 11353994A JP H07294607 A JPH07294607 A JP H07294607A
- Authority
- JP
- Japan
- Prior art keywords
- current
- circuit
- transistor
- increasing
- driver circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体試験装置で高速化
に対応できるドライバー回路に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driver circuit capable of coping with high speed in a semiconductor testing device.
【0002】[0002]
【従来の技術】半導体試験装置用ドライバー回路は高速
化出来ない回路上の制限があった。高速化するにはドラ
イバー回路の電流を増大する必要があったが従来のドラ
イバー回路の電流を増大すると、消費電力の増大によ
り、回路が破壊される可能性があった。従来の半導体試
験装置用ドライバー回路を図3に示す。VLSI等の半
導体試験装置用ドライバーの出力を高速化するには、電
流源I11・5、電流源I12・11、電流源I21・
12、電流源I22・6を大きくしなければならず、ド
ライバー回路のパワー制限により高速化に限界があっ
た。2. Description of the Related Art A driver circuit for a semiconductor test apparatus has a limitation on the circuit which cannot be speeded up. It has been necessary to increase the current of the driver circuit to increase the speed, but if the current of the conventional driver circuit is increased, the circuit may be destroyed due to an increase in power consumption. A conventional driver circuit for semiconductor test equipment is shown in FIG. In order to speed up the output of the driver for the semiconductor test equipment such as VLSI, the current source I11.5, the current source I12 / 11, the current source I21.
12. The current source I22.6 must be made large, and there is a limit to the speedup due to the power limitation of the driver circuit.
【0003】[0003]
【発明が解決しょうとする課題】これは次の様な欠点が
あった。半導体試験装置用ドライバー回路を高速化する
には、ドライバー回路の電流を増大しなければならず、
回路上の制限によって高速化できなかった。回路配線の
変更、回路定数の変更だけでは高速化はできなかった。
半導体試験装置用ドライバー回路を高速化するために、
回路電力を上げる方式を取れば、回路の電流が大きくな
るため、回路の放熱が大変問題となり、回路の放熱が空
冷では追いつけず、冷却方法について工夫が必要であっ
た。半導体試験装置用ドライバー回路を高速化するため
に、回路の電流が大きくなると、半導体試験装置そのも
のを大電流方式にするため、装置全体が異常に大型化し
て、経済効果がそこなわれた。[Problems to be Solved by the Invention] This has the following drawbacks. In order to speed up the driver circuit for semiconductor test equipment, the current of the driver circuit must be increased,
The speed could not be increased due to the limitation on the circuit. It was not possible to speed up just by changing the circuit wiring and circuit constants.
In order to speed up the driver circuit for semiconductor test equipment,
If the method of increasing the circuit power is used, the current of the circuit becomes large, so that the heat radiation of the circuit becomes a serious problem, and the heat radiation of the circuit cannot be caught up by the air cooling, and it is necessary to devise a cooling method. When the current of the circuit becomes large in order to increase the speed of the driver circuit for the semiconductor test device, the semiconductor test device itself is changed to a large current system, so that the entire device becomes abnormally large and the economic effect is impaired.
【0004】[0004]
【課題を解決するための手段】本発明の課題を解決する
ための手段は、(ア)ダイオード・ブリッジ回路の出力
電圧VP7の遷移時間を検出する、C1,QX11から
なる検出回路1及びC2,QX21からなる検出回路2
を設け、(イ)立ち上がり時には、立ち上がり用の電流
源の電流を増やし、立ち下がり用の電流を減らす、RX
1,DX11,QX12,QX13からなる電流増減回
路3を設け、立ち下がり時には、立ち下がり用の電流源
の電流を増やし、立ち上がり用の電流を減らす、RX
2,DX21,QX22,QX23からなる電流増減回
路4を設け、以上のように構成する、半導体試験装置用
ドライバー回路である。Means for solving the problems of the present invention are as follows. (A) Detection circuits 1 and C2 comprising C1 and QX11 for detecting the transition time of the output voltage VP7 of the diode bridge circuit. Detection circuit 2 consisting of QX21
(A) When rising, increase the current of the rising current source and decrease the falling current, RX
A current increasing / decreasing circuit 3 including 1, DX11, QX12, and QX13 is provided to increase the current of the current source for falling and decrease the current for rising at the time of RX.
A driver circuit for a semiconductor test apparatus, which is provided with a current adjusting circuit 4 composed of 2, DX21, QX22, and QX23 and configured as described above.
【0005】[0005]
【作用】次に本発明の作用を述べる、ダイオード・ブリ
ッジ回路の出力電圧VP7の遷移時間を検出する回路1
及び検出回路2において、出力電圧VP7の遷移時間を
検出する。電流増減回路3で、立ち上がり時には、立ち
上がり用の電流源の電流を増やし、立ち下がり用の電流
を減らし、電流増減回路4で、立ち下がり時には、立ち
下がり用の電流源の電流を増やし、立ち上がり用の電流
を減らす等の作用によって遷移時間を効率良く高速化す
る。Next, the operation of the present invention will be described. The circuit 1 for detecting the transition time of the output voltage VP7 of the diode bridge circuit.
The detection circuit 2 detects the transition time of the output voltage VP7. In the current adjusting circuit 3, the current of the current source for rising is increased and the current for the falling is reduced at the rising time, and the current increasing / decreasing circuit 4 increases the current of the current source for the falling at the time of falling to increase the current for the rising. The transition time is efficiently and speedily increased by the action of reducing the current.
【0006】[0006]
【実施例】以下、本発明の実施例による電気回路を図1
に示す。 (1)コンデンサC1,トランジスタQX11からなる
検出回路1、及びコンデンサC2,トランジスタQX2
1からなる検出回路2において、ダイオード・ブリッジ
回路の出力電圧VP7の遷移時間を検出する。例えば、
立ち上がりのときC1とQX11で、立ち上がり部を検
出して、電流IC1の変化に換える。立ち下がりのと
き、C2とQX21で、立ち下がり部を検出して、電流
IC2の変化にかえる。 電流IC1の変化は次式で与えられる=(δVp/δ
t)× C1 電流IC2の変化は次式で与えられる=(δVp/δ
t)× C2 (2)抵抗RX1,ダイオードDX11,トランジスタ
QX12,トランジスタQX13からなる電流増減回路
3で、立ち上がり時には、立ち上がり用の電流源の電流
を増やし、立ち下がり用の電流を減らす。また、抵抗R
X2,ダイオードDX21,トランジスタQX22,ト
ランジスタQX23からなる電流増減回路4の回路で、
立ち下がり時には、立ち下がり用の電流源の電流を増や
し、立ち上がり用の電流を減らす。よって遷移時間を効
率的に運用し、大電流を流さないでも、目的とするドラ
イバー回路の高速化に対応できた。例えば、立ち上がり
部で電流を増やすとき電流Ip1は次式で与えられる。 〔VF(DX11)+VRX1−VBE(QX12)〕
/ R11=〔VF(DX11)−VBE(QX12)
+RX1(I11+(δVp/δt)X C1〕/ R
11 (3)ダイオード・ブリッジの出力電圧VP・7の電圧
変化、IC1・8の電流変化及び定常電流I1・9の変
化、電流増減IP1・10の変化を図2に示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An electric circuit according to an embodiment of the present invention is shown in FIG.
Shown in. (1) Detection circuit 1 including capacitor C1 and transistor QX11, and capacitor C2 and transistor QX2
In the detection circuit 2 composed of 1, the transition time of the output voltage VP7 of the diode bridge circuit is detected. For example,
At the time of rising, C1 and QX11 detect the rising part and change to the change of the current IC1. At the time of the fall, C2 and QX21 detect the fall portion and change the change of the current IC2. The change of the current IC1 is given by the following equation = (δVp / δ
t) × C1 The change of the current IC2 is given by the following equation = (δVp / δ
t) × C2 (2) The current increasing / decreasing circuit 3 including the resistor RX1, the diode DX11, the transistor QX12, and the transistor QX13 increases the current of the rising current source and decreases the falling current at the time of rising. Also, the resistance R
X2, the diode DX21, the transistor QX22, the circuit of the current adjusting circuit 4 consisting of the transistor QX23,
At the time of falling, the current of the current source for falling is increased and the current for rising is decreased. Therefore, the transition time was efficiently used, and the target driver circuit could be speeded up even without passing a large current. For example, when increasing the current at the rising portion, the current Ip1 is given by the following equation. [VF (DX11) + VRX1-VBE (QX12)]
/ R11 = [VF (DX11) -VBE (QX12)
+ RX1 (I11 + (δVp / δt) X C1] / R
11 (3) FIG. 2 shows the voltage change of the output voltage VP.7 of the diode bridge, the current change of the IC1.8 and the change of the steady current I1.9, and the change of the current increase / decrease IP1.10.
【0007】[0007]
【発明の効果】本発明は、以上説明したように構成され
ているので、以下に記載されるような効果を奏する。 (1)半導体試験装置用ドライバー回路を高速化するに
は、回路の電流I11・5,I22・6等を大きくしな
ければならず、回路電力の制限で、高速化できなかった
従来技術と異なる。本発明では、定常電流I1・9は通
常点に置きダイオード・ブリッジ回路の出力電圧VP7
の遷移時間を検出することによって、出力電圧VP7の
立ち上がり、立ち下がりの遷移時間にタイミングよくド
ライバー電流を供給する電流増減回路の機能によって、
定常電流を常に大きく流すことなくドライバー回路の高
速化が可能となった。 (2)ドライバー回路の高速化のために、定常電流を常
に大きく流す必要のない回路構成となったため、回路の
放熱の問題もなく、小型で高性能で、経済効果の高い半
導体試験装置用ドライバー回路の提供が可能となった。Since the present invention is constructed as described above, it has the following effects. (1) In order to increase the speed of the driver circuit for semiconductor test equipment, the circuit currents I11.5, I22.6, etc. must be increased, which is different from the conventional technology in which the speed cannot be increased due to the limitation of the circuit power. . In the present invention, the steady current I1.9 is placed at the normal point and the output voltage VP7 of the diode bridge circuit is set.
By detecting the transition time of the output voltage VP7, the function of the current increasing / decreasing circuit that supplies the driver current at the transition time of the output voltage VP7 at the rising and falling edges is
It has become possible to speed up the driver circuit without constantly flowing a large steady current. (2) A driver for semiconductor test equipment that is small in size, high in performance, and highly economical because there is no problem of heat dissipation in the circuit because the steady current does not have to be constantly passed in order to speed up the driver circuit. It became possible to provide a circuit.
【図1】本発明の、実施例による電気回路図FIG. 1 is an electric circuit diagram according to an embodiment of the present invention.
【図2】本発明の、実施例による電圧、電流変化の図FIG. 2 is a diagram showing changes in voltage and current according to an embodiment of the present invention.
【図3】従来技術の、実施例による電気回路図FIG. 3 is an electric circuit diagram according to an embodiment of the prior art.
1 検出回路 2 検出回路 3 電流増減回路 4 電流増減回路 5 I11の電流源 6 I22の電流源 7 ダイオード・ブリッジの出力電圧VP 8 コンデンサーC1による検出電流IC1 9 定常電流I1 10 立ち上がり電流IP1 11 I12の電流源 12 I21の電流源 1 detection circuit 2 detection circuit 3 current increase / decrease circuit 4 current increase / decrease circuit 5 current source of I11 6 current source of I22 7 output voltage of diode bridge VP 8 detection current of capacitor C1 IC1 9 steady current I1 10 rising current IP1 11 of I12 Current source 12 I21 current source
Claims (1)
P(7)の遷移時間を検出する、コンデンサC1とトラ
ンジスタQX11とからなる検出回路(1)と、コンデ
ンサC2とトランジスタQX21とからなる検出回路
(2)を設け、 立ち上がり時には、立ち上がり用の電流源の電流を増や
し、立ち下がり用の電流を減らす、抵抗RX1、ダイオ
ードDX11、トランジスタQX12、トランジスタQ
X13とからなる電流増減回路(3)を設け、 立ち下がり時には、立ち下がり用の電流源の電流を増や
し、立ち上がり用の電流を減らす、抵抗RX2、ダイオ
ードDX21、トランジスタQX22、トランジスタQ
X23とからなる電流増減回路(4)を設け、 以上の構成を具備することを特徴とする、半導体試験装
置用ドライバー回路。1. An output voltage V of a diode bridge circuit.
A detection circuit (1) including a capacitor C1 and a transistor QX11 for detecting the transition time of P (7) and a detection circuit (2) including a capacitor C2 and a transistor QX21 are provided. The current for increasing and decreasing the current for falling, resistor RX1, diode DX11, transistor QX12, transistor Q
A current increasing / decreasing circuit (3) including X13 is provided, and at the time of falling, the current of the current source for falling is increased and the current of rising is decreased, the resistor RX2, the diode DX21, the transistor QX22, the transistor Q.
A driver circuit for a semiconductor test device, comprising a current increasing / decreasing circuit (4) including X23 and having the above-mentioned configuration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11353994A JP3496978B2 (en) | 1994-04-28 | 1994-04-28 | Driver circuit for semiconductor test equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11353994A JP3496978B2 (en) | 1994-04-28 | 1994-04-28 | Driver circuit for semiconductor test equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07294607A true JPH07294607A (en) | 1995-11-10 |
JP3496978B2 JP3496978B2 (en) | 2004-02-16 |
Family
ID=14614889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11353994A Expired - Fee Related JP3496978B2 (en) | 1994-04-28 | 1994-04-28 | Driver circuit for semiconductor test equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3496978B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111736054A (en) * | 2020-06-23 | 2020-10-02 | 中国南方电网有限责任公司超高压输电公司 | Test circuit for IGBT drive desaturation protection function and simulation test method thereof |
-
1994
- 1994-04-28 JP JP11353994A patent/JP3496978B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111736054A (en) * | 2020-06-23 | 2020-10-02 | 中国南方电网有限责任公司超高压输电公司 | Test circuit for IGBT drive desaturation protection function and simulation test method thereof |
CN111736054B (en) * | 2020-06-23 | 2022-09-16 | 中国南方电网有限责任公司超高压输电公司 | Test circuit for IGBT drive desaturation protection function and simulation test method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP3496978B2 (en) | 2004-02-16 |
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