KR20160112262A

KR20160112262A - apparatus for controlling temperature, tester including the same

Info

Publication number: KR20160112262A
Application number: KR1020150037602A
Authority: KR
Inventors: 김용규
Original assignee: 티오에스주식회사
Priority date: 2015-03-18
Filing date: 2015-03-18
Publication date: 2016-09-28
Also published as: KR101695906B1

Abstract

The present invention discloses a temperature control apparatus and a tester equipped with the same. The HI apparatus includes a thermoelectric module, an HI bridge circuit for providing a current in the forward or reverse direction to the thermoelectric module, and a HI circuit outputting the current from the HI bridge circuit to the thermoelectric module according to a current signal sensed by the HI bridge circuit. And a current control module having a current control circuit for controlling the magnitude of the current.

Description

A temperature control device, a tester having the same,

The present invention relates to a temperature control apparatus for controlling the temperature of a substrate, and a tester having the same.

In general, testing of semiconductor devices can enhance the reliability of a product. For example, the test can be performed at a subzero temperature below room temperature or at a high temperature above room temperature. The tester can be equipped with a cooler and a heater. The cooler can cool the semiconductor device. On the other hand, the heater can heat the semiconductor element. The semiconductor device is returned to the cooler and the heater, and the test process can be performed after a certain waiting time. However, the movement and latency of semiconductor devices are becoming factors that increase the test process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a temperature control device capable of heating and cooling a semiconductor device without moving, and a tester equipped with the temperature control device.

Another object of the present invention is to provide a temperature control device capable of accelerating the current in proportion to the temperature and resistance of the thermoelectric module, and a tester equipped therewith.

The present invention discloses a temperature control apparatus. The apparatus includes a thermoelectric module; And an H bridge circuit for providing a current in a forward direction or a backward direction to the thermoelectric module, and a current controller for controlling the magnitude of the current outputted from the HI bridge circuit to the thermoelectric module according to a current signal sensed by the H- And a current control module having a control circuit.

According to another aspect of the present invention, there is provided a temperature control apparatus comprising: a thermoelectric module; A temperature control module for monitoring a temperature of the thermoelectric module; And an H bridge circuit for providing a forward or reverse current to the thermoelectric module according to a control signal of the temperature control module; and an H bridge circuit for outputting current from the H bridge circuit to the thermoelectric module according to a current signal sensed by the H bridge circuit. And a current control circuit for controlling a magnitude of the current flowing through the current control circuit.

A tester according to another embodiment of the present invention includes: a test apparatus for testing a substrate; A test control device for controlling the test apparatus; And a temperature control device for controlling the temperature of the substrate. The temperature control device includes: a thermoelectric module; And an H bridge circuit for providing a current in a forward direction or a backward direction to the thermoelectric module, and a current controller for controlling the magnitude of the current outputted from the HI bridge circuit to the thermoelectric module according to a current signal sensed by the H- And a current control module having a control circuit.

As described above, the temperature control device according to the embodiments of the present invention includes a thermoelectric module for heating and cooling the substrate without moving, a current control module for providing current to the thermoelectric module, a temperature And a control module. The current control module includes: an H-bridge circuit for providing a current in the forward or reverse direction to the thermoelectric module; and a current control circuit for controlling the magnitude of current in the forward or reverse direction according to the current signal sensed by the H- Lt; / RTI > The current control circuit can accelerate the current in proportion to the magnitude of the resistance of the thermoelectric module.

1 is a schematic view of a tester according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view schematically showing the test apparatus and the temperature control apparatus of Fig. 1;
FIGS. 3 and 4 are views schematically showing the temperature control device of FIG. 2. FIG.
5 is a circuit diagram showing an example of the temperature control device of Fig.
6 is a graph showing the temperature change of the thermoelectric module of FIG.
7 is a circuit diagram showing another example of the temperature control device of Fig.
8 is a circuit diagram showing another example of the temperature control device of Fig.
9 is a circuit diagram showing still another example of the temperature control device of Fig.
10 is a flow chart showing a temperature control method of the temperature control device of FIGS. 8 and 9. FIG.
11 is a graph showing the temperature change of the thermoelectric module according to the temperature control method of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is to be understood that the phrase "comprises" and / or "comprising" used in the specification exclude the presence or addition of one or more other elements, steps, operations and / or elements, I never do that. It will also be appreciated that in the specification, common electrical terms relating to transistors, diodes, resistors, control terminals, output stages, input stages, modules, The reference numerals shown in the order of description are not necessarily limited to those in the order of the preferred embodiments.

1 schematically shows a tester 10 according to an embodiment of the present invention.

Referring to FIG. 1, a tester 10 of the present invention may include a test apparatus 20, a test control apparatus 30, and a temperature control apparatus 40. The test apparatus 20 can perform an electrical test of the object to be measured. The test control device 30 can control the test device 20. [ The temperature control device 40 can control the temperature of the test apparatus 20. [

Fig. 2 schematically shows the test apparatus 20 and temperature control device 40 of Fig.

2, the semiconductor substrate 12 may be disposed between the test apparatus 20 and the temperature control apparatus 40. [ According to one example, the test apparatus 20 may be disposed under the semiconductor substrate 12. The temperature control device 40 may be disposed on the semiconductor substrate. Alternatively, the temperature control device 40 may be disposed below the semiconductor substrate 12, and the testing device 20 may be disposed on the semiconductor substrate 12. The temperature control device 40 can cool or heat the semiconductor substrate 12. [ For example, the semiconductor substrate 12 may be cooled to a temperature of about -20 占 폚. The semiconductor substrate 12 may be heated to a temperature of about 120 < 0 > C. The semiconductor substrate 12 may include a plurality of unit elements 11. Although not shown, the unit elements 11 may be arranged in an array form. The test apparatus 20 may include a probe card (not shown). The probe card may have a probe (not shown) electrically connected to the unit elements 11. The test apparatus 20 can perform an electrical test of the unit elements 11. [

Figs. 3 and 4 are views schematically showing the temperature control device 40 of Fig.

3 and 4, the temperature control device 40 may include a thermoelectric module 50, a temperature control module 60, and a current control module 70. The thermoelectric module 50 can be heated or cooled according to the direction of the current provided by the current control module 70. [ A plurality of thermoelectric modules 50 may be arranged, and a plurality of thermoelectric modules 50 may be arranged in an array form. The temperature control module 60 can control the temperature of the thermoelectric module 50. The current control module 70 may provide a current to the thermoelectric module 50. [ There are a plurality of current control modules 70, and a plurality of current control modules 70 may be arranged in one direction. The temperature control module 60 can control the direction of the output current of the current control module 70. [ The temperature control module 60 may correspond to a plurality of the thermoelectric modules 50 and the plurality of the current control modules 70 one by one and manage the thermoelectric modules 50 and the plurality of the current control modules 70 for each channel.

Fig. 5 shows an example of the temperature control device 40 of Fig.

5, the thermoelectric module 50 may include a Peltier element 52, a radiator 54, a metal molding 56,

The Peltier element 52 can be heated or cooled according to the direction of the current. For example, the Peltier element 52 may be heated by a forward current and cooled by a reverse current.

The radiator 54 can remove heat or cooling heat of the Peltier element 52. The radiator 54 can absorb the heat of the Peltier element 52 in a water-cooled manner. Alternatively, the radiator 54 may absorb the heat of the Peltier element 52 in an air-cooled fashion.

The metal moldings 56 may surround the Peltier element 52 and the radiator 54. The metal moldings 56 can transmit heat and cooling heat of the Peltier element 52 to the outside. The semiconductor substrate is disposed on the metal mold 56 and can be heated or cooled by the Peltier element 52.

The thermometer 57 may be disposed adjacent to the Peltier element 52. The thermometer 57 can detect the temperature of the Peltier element 52.

The temperature control module 60 may have a first temperature detection stage 60a, and first to fourth control stages 61-64. The first temperature detecting stage 60a may be connected to the thermometer 57. [ The temperature control module 60 may monitor the temperature of the Peltier element 52. [ The first to fourth control stages 61-64 may be connected to the current control module 70. The temperature control module 60 can output control signals to the first to fourth control stages 61-64 according to the temperature of the Peltier element 52. [ For example, the first through fourth control stages 61-64 may each include a forward-positive control terminal, a forward-negative control terminal, A reverse-positive control terminal, and a reverse-negative control terminal.

The current control module 70 may include an H bridge circuit 72 and a current control circuit 80. The HI bridge circuit 72 can output the current in the forward direction or the reverse direction. The current control circuit 80 can increase or decrease the magnitude of the current in the HI bridge circuit 72. [

The HI bridge circuit 72 may provide a forward or reverse current to the thermoelectric module 50 in accordance with the control signal of the temperature control module 60. According to one example, the HI bridge circuit 72 may be connected to the first to fourth control stages 61-64. The H-bridge circuit 72 includes an input voltage terminal Vin, first to fourth diodes D1 to D4, first to fourth transistors T1 to T4, and first and second resistors R1 , R2).

The input voltage stage (Vin) can provide a DC voltage. The DC voltage may be about 5V. The first to fourth diodes D1 to D4 may be connected to a diode bridge circuit. The input voltage stage Vin, the ground, and the first and second output voltage stages Vout1 and Vout2 may be connected between the first through fourth diodes D1-D4.

The first to fourth transistors T1 to T4 may be connected in parallel with the first to fourth diodes D1 to D4, respectively. The first to fourth transistors T1 to T4 may be connected to the first to fourth control stages 61 to 64, respectively. For example, the first and second control stages 61 and 62 may be connected to the first and fourth transistors T1 and T4.

When a turn-on signal is applied to the first and second control stages 61 and 62, the first and second output stages Vout1 and Vout2 can provide a forward current to the Peltier device 52. [ Alternatively, the third and fourth control stages 63 and 64 may be connected to the second and third transistors T2 and T3. When the turn-on signal is applied to the third and fourth control stages 63 and 64, the first and second output stages Vout1 and Vout2 can provide a reverse current to the Peltier device 52. [

The first and second resistors R1 and R2 may be disposed between the third and fourth transistors T3 and T4 and the ground, respectively.

The current control circuit 80 may be connected to the HI bridge circuit 72. According to one example, the current control circuit 80 includes first and second current sensors S1 and S2, first and second sense amplifiers 81 and 84, first and second comparators 82 and 82, , 85, and first and second control signal amplifiers 83, 86.

The first and second current sensors S1 and S2 may be disposed between the third and fourth transistors T3 and T4 and the first and second resistors R1 and R2, respectively. The first and second current sensors S1, S2 may comprise a metal foil current sensor. The first and second current sensors S1 and S2 may sense the current of the HI bridge circuit 72. [

The first and second current sensors S1 and S2 may be connected to the first and second sense amplifiers 81 and 84, respectively. The first and second sensing signal amplifiers 81 and 84 may amplify the sensing signals in the first and second current sensors S1 and S2. The first and second sensing signal amplifiers 81 and 84 may be connected to the first and second comparators 82 and 85, respectively. The first and second control signal amplifiers 83 and 86 may be connected between the first and second comparators 82 and 85 and the first and second transistors T1 and T2, respectively. The first and second control signal amplifiers 83 and 86 may amplify the control signal or the sensing signal.

The first and second comparators 82 and 85 may be connected between the first and third control stages 61 and 63 and the first and second control signal amplifiers 83 and 86, respectively. The first and second comparators 82 and 85 compare the control signals with the sense signals of the first and second current sensors S1 and S2 and output the same to the first and second transistors T1 and T2 can do. According to one example, the resistance of the Peltier element 52 can be changed as the temperature is changed. For example, the resistance of the Peltier element 52 can be increased as the temperature increases. The first current sensor S1 can detect that the forward current is reduced. The first sensing signal amplifier 81 can amplify the sensing signal to a level lower than the control signal of the first control stage 61. [ The first comparator 82 may compare the sense signal and the control signal. When the control signal has a voltage higher than the detection signal, the first comparator 82 can output the control signal. The first transistor T1 may be turned on. The control signal may be increased or decreased in inverse proportion to the sensing signal. When the sense signal is low, the control signal can be increased. Therefore, the first comparator 82 and the first control signal amplifier 83 are controlled by the control signal of the first control stage 61 so as to accelerate the current in the forward direction as the resistance of the Peltier element 52 increases . Alternatively, if the sense signal is higher than the control signal, the first comparator 82 may output a sense signal. The first control signal amplifier 83 can reduce the detection signal. The first transistor T1 may be turned off.

Conversely, the resistance of the Peltier element 52 can be lowered as the temperature is lowered. The second current sensor S2 can detect that the reverse current is increased. The second sensing signal amplifier 84 can amplify the sense signal of the reverse current. If the sense signal is larger than the control signal of the third control stage 63, the second comparator 85 and the second signal amplifier 86 can reduce the current in the reverse direction as much as the resistance of the Peltier element 52 is lowered. The second transistor T2 may be turned off. Alternatively, if the current in the reverse direction is reduced, the second comparator 85 may compare the control signal at the third control stage 63 with the current sense signal and output a control signal to the second transistor T2. The second transistor T2 may be turned on.

FIG. 6 shows the temperature change of the thermoelectric module 50 of FIG. Here, the horizontal axis is time and the vertical axis is temperature.

Referring to FIG. 6, the temperature of the thermoelectric module 50 may be changed between a minimum temperature Tdown and a maximum temperature Tup. The heating speed Vh of the thermoelectric module 50 and the cooling speed Vc may be different. For example, the heating speed Vh may be faster than the cooling speed Vc. The heating speed Vh and the cooling speed Vc may correspond to the slope of the temperature change graph 51 as a temperature change value with time. The heating rate Vh may be a value obtained by dividing the temperature change from the lowest temperature Tdown to the maximum temperature Tup by the time variation value. The heating rate Vh may have a positive value. The cooling rate Vc may be a value obtained by dividing the temperature change from the maximum temperature Tup to the minimum temperature Tdown by the time variation value. The cooling rate Vc may have a negative value. The heating speed Vh and the cooling speed Vc may be bilaterally symmetrical.

Fig. 7 shows another example of the temperature control device 40 of Fig.

Referring to FIG. 7, the temperature control module 70 of the temperature control device 40 may include a current control circuit 80 having first and second current mirror circuits 87, 88. The H-bridge circuit 72 is the same as that of Fig.

The first current mirror circuit 87 can adjust the magnitude of the current in the forward direction in the HI bridge circuit 72. According to one example, the first current mirror circuit 87 may include first and second charge pump transistors P1 and P2 and first and second NMOS transistors N1 and N2. The first and second input transistors P1 and P2 may be connected between the first power voltage terminal V _DD1 and the first and second emmos transistors N1 and N2, respectively. The gates of the first and second readout transistors P1 and P2 may be connected to each other. The drains of the first and second emmos transistors N1 and N2 may be grounded. The gates of the first and second readout transistors P1 and P2 may be connected to each other and may be connected to the drain of the first phantom power transistor P1. The third output stage Vout3 may be disposed between the first readout transistor P1 and the first NMOS transistor N1. The third output terminal (Vout3) may be connected to the first control terminal (61). The fourth output terminal Vout4 may be disposed between the second finite-state transistor P2 and the second NMOS transistor N2. The gate of the first NMOS transistor N1 may be connected to the first sense node SN1 of the HI bridge circuit 72. [

For example, when the forward current of the H-bridge circuit 72 is reduced to generate a low signal at the first sense node SN1, a high signal can be transmitted to the third output terminal Vout3. The first transistor T1 may be turned on. Further, when the high signal is increased, the forward current supplied to the Peltier element 52 of the first transistor Tl can be acceleratedly increased.

Conversely, when a positive current flows excessively and a high signal is generated at the first sense node SN1, a low signal may be transmitted to the third output terminal Vout3. The first transistor T1 may be turned off. The forward current can be reduced.

The second current mirror circuit 88 can adjust the magnitude of the current in the reverse direction in the HI bridge circuit 72. According to one example, the second current mirror circuit 88 may include third and fourth fmotor transistors P3 and P4, and third and fourth NMOS transistors N3 and N4. The third and fourth fuse MOS transistors P3 and P4 may be connected between the second power voltage terminal VDD2 and the third and fourth NMOS transistors N3 and N4, respectively. The drains of the third and fourth NMOS transistors N3 and N4 may be grounded. The gates of the third and fourth Fourier transform transistors P3 and P4 may be connected to each other and may be connected to the drain of the third Fourier transform transistor P3. The fifth output stage Vout5 may be disposed between the third readout transistor P3 and the third NMOS transistor N3. The fifth output terminal (Vout5) may be connected to the third control terminal (63). And the sixth output terminal Vout6 may be disposed between the fourth readout transistor P4 and the fourth NMOS transistor N4. The gate of the third nMOS transistor N3 may be connected to the second sensing node SN2 of the HI bridge circuit 72. [

For example, if the reverse current of the Hs bridge circuit 72 is reduced and a low signal is generated at the second sensing node SN2, a high signal may be delivered to the fifth output terminal Vout5. The second transistor T2 may be turned on. Further, when the high signal is increased, the reverse current supplied to the Peltier element 52 of the second transistor T2 can be acceleratedly increased.

Conversely, if a reverse current flows excessively and a high signal is generated at the second sense node SN2, a low signal may be delivered to the fifth output terminal Vout5. The second transistor T2 may be turned off. The current in the reverse direction can be reduced.

Fig. 8 shows another example of the temperature control device 40 of Fig.

8, the thermoelectric module 50 may include a Peltier element 52, a radiator 54, a metal molding 56, and a thermocouple 58.

The Peltier element 52, the radiator 54, and the metal molding 56 may be the same as in Fig. The thermocouple 58 may be connected to the temperature control module 60. The thermocouple 58 can detect the temperature of the Peltier element 52, and the metal mold 56. The temperature control module 60 may monitor the temperature of the thermoelectric module 50 according to the Hebeck effect of the thermocouple 58.

Alternatively, the thermocouple 58 may be heated by receiving current from the current control module 70. That is, the thermocouple 58 can be a heater. For example, the anode of thermocouple 58 may comprise an alloy of nickel and chrome, and the cathode may comprise an alloy of nickel and copper. An alloy of nickel and chromium is a nichrome hot wire, which has ohmic resistance and can generate heat in proportion to the current. The thermocouple 58 can be heated faster than the Peltier element 52. [ The thermocouple 58 can accelerate the heating of the Peltier element 52.

The temperature control module 60 may have first through fourth control stages 61-64 and first and second sense signal input stages 65 and 66. The first to fourth control stages 61-64 may be the same as in Fig. The first and second sense signal input stages 65 and 66 may be connected to the thermocouple 58.

The current control module 70 may include an HI bridge circuit 72, a current control circuit 80, and a thermocouple output control circuit 89. The H-bridge circuit 72 may be the same as that of Fig.

The current control circuit 80 may include first and second current mirror circuits 87, 88 and an output control circuit 89. The first and second current mirror circuits 87, 88 are the same as in Fig.

The thermocouple output control circuit 89 can control the current between the HI bridge circuit 72 and the thermocouple 58. According to one example, the fifth and sixth NMOS transistors N5 and N6, the fifth and sixth NMOS transistors P5 and P6, and the inverter 90 may be included.

The fifth MOS transistor N5 and the fifth MOS transistor P5 can control the heating of the thermocouple 58. According to one example, the fifth and sixth MOS transistor N5 may be connected between the first output terminal Vout1 and the thermocouple 58. The fifth Fourier transform transistor P5 may be connected between the second output terminal (Vout2) and the thermocouple (58). The gates of the fifth MOS transistor N5 and the fifth pixel MOS transistor P5 may be connected to the first control terminal 61. [ The fifth MOS transistor N5 and the fifth MOS transistor P5 can control the current output to the thermocouple 58 in accordance with the control signal of the first control stage 61. [ When the forward current is applied to the Peltier element 52, the fifth NMOS transistor N5 and the fifth NMOS transistor P5 are connected to the thermocouple 58 in the form of a first transmission gate have. The thermocouple 58 can be heated by the current in the HI bridge circuit 72.

The sixth MOS transistor (N6), sixth MOS transistor (P6), and inverter (90) can control the temperature sensing of the thermocouple (58). The sixth MOS transistor N6 may be connected between the second sensing signal input terminal 66 and the thermocouple 58. And a sixth sense amplifier transistor P6 may be connected between the first sense signal input terminal 65 and the sixth sense amplifier transistor P6. The inverter 90 may be connected to the gates of the sixth and sixth NMOS transistors N6 and P6 and the first control terminal 61. [ The inverter 90 can reverse the control signal of the first control stage 61. [ The sixth and sixth MOS transistors N6 and P6 can be operated according to the inverted control signal. For example, when a forward current is provided to the thermoelectric module 50, the inverter 90, the sixth and sixth phantom transistors N6 and P6 are connected to the thermocouple 58 and the temperature control The module 60 can be turned off. Conversely, when a reverse current is supplied to the thermoelectric module 50, the inverter 90, the sixth and sixth microscopic transistors N6 and P6 are connected to the thermocouple 58 and the temperature control module 60, respectively. The thermocouple 58 can detect the temperature during cooling of the Peltier element 52.

Fig. 9 shows another example of the temperature control device 40 of Fig.

Referring to FIG. 9, the temperature control device 40 may include a current control module 70 having a Peltier device output control circuit 92. The thermoelectric module 50 and the temperature control module 60 and the age bridge circuit 72 of the current control module 70 are the same as those in Fig. The current control circuit 80 of the current control module 70 may include first and second current mirror circuits 87 and 88, a thermocouple output control circuit 89 and a Peltier device output control circuit 92 . The thermocouple output control circuit 89 and the Peltier element output control circuit 92 may be the output control circuit of the HCH bridge circuit 72. [ The first and second current mirror circuits 87, 88 and the thermocouple output control circuit 89 are the same as those in Fig.

The Peltier element output control circuit 92 can adjust the output current of the HCH bridge circuit 72 to the Peltier element 52. [ The Peltier element output control circuit 92 may include a seventh and eighth NMOS transistor N7 and an eighth NMOS transistor N8.

The seventh and eighth MOS transistors N7 and N8 may be arranged between the first and second output stages Vout1 and Vout2 and the Peltier element 52. [ The gates of the seventh and eighth MOS transistors N7 and N8 may be connected to the fourth and sixth output terminals Vout4 and Vout6 of the first and second current mirror circuits 87 and 88 have. The seventh and eighth MOS transistors N7 and N8 can provide a current to the Peltier element 52 in proportion to the sensing signal at the first and second sensing nodes SN1 and SN2. When the current at the first and second sensing nodes SN1 and SN2 is reduced, the seventh and eighth NMOS transistors N7 and N8 can reduce the current provided to the Peltier element 52 have. The thermocouple 58 can be further heated by being supplied with a reduced current.

10 is a flow chart showing the temperature control method of the temperature control device 40 of Figs. 8 and 9. Fig.

Referring to Figs. 8 to 10, the Peltier element 52 is cooled (S10). The temperature control module 60 may output a turn-on signal to the third and fourth control stages 63 and 64. [ The current control module 70 can output a current in the reverse direction to the Peltier element 52. [ The Peltier element 52 can be cooled to about -20 占 폚. The radiator 54 can absorb the heat generated by the Peltier element 52. [ The temperature control module 60 may output a turn-off signal to the first and second control terminals 61 and 62. [ The thermocouple 58 may be connected to the temperature control module 60. The thermocouple 58 can detect the temperature of the Peltier element 52. The temperature control module 60 can monitor the temperature of the Peltier element 52 using a thermocouple 58.

Next, the Peltier element 52 and the thermocouple 58 are heated (S20). The temperature control module 60 may output a turn-on signal to the first and second control stages 61 and 62. [ The HI bridge circuit 72 can output a current in the forward direction to the Peltier element 52 and the thermocouple 58. The thermocouple 58 can be heated faster than the Peltier element 52. The thermocouple 58 can accelerate the heating of the Peltier element 52. By the accelerated heating of the Peltier element 52, the time required for the test process can be shortened.

Next, the temperature control module 60 determines whether to cool and heat the thermoelectric module 50 (S30). The cooling and heating determination step S30 may be determined by the progress of the test process. If the test process is continuously required, the cooling step (S10) and the heating step (S20) of the thermoelectric module (50) can be repeatedly performed. If the test process is no longer performed, cooling and heating of the thermoelectric module 50 can be stopped.

FIG. 11 shows a temperature change of the thermoelectric module 50 according to the temperature control method of FIG.

11, the heating speed Vh and the cooling speed Vc of the thermoelectric module 50 may not be symmetrical from side to side. The cooling speed Vc of the thermoelectric module 50 can be symmetrical to the heating speed VF of the Peltier element 52 from side to side. The heating speed Vh of the thermoelectric module 50 may be greater than the heating speed VF of the Peltier element 52. [ Thus, the thermocouple 58 can be heated faster than the heating rate VF of the Peltier element 52. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the exemplary embodiments or constructions. It can be understood that It is therefore to be understood that the above-described embodiments and applications are illustrative in all aspects and not restrictive.

Claims

Thermoelectric module; And
A H-bridge circuit for providing a current in a forward direction or a reverse direction to the thermoelectric module; and a current control unit for controlling a magnitude of the current output from the H-bridge circuit to the thermoelectric module according to a current signal sensed by the H- A temperature control apparatus comprising a current control module having a circuit.

The method according to claim 1,
The H-bridge circuit includes first to fourth transistors arranged between an input voltage terminal and a ground to linearly control the current,
The current control circuit comprising:
First and second current sensors connected between the third and fourth transistors and the ground to detect a current signal of the HIS bridge circuit; And
And first and second comparators connected between the current sensors and the first and second transistors for comparing the current signal with a control signal for controlling the current and outputting the current signal to the first and second transistors Temperature control device.

3. The method of claim 2,
The current control circuit comprising:
First and second sense amplifiers connected between the current sensors and the comparators to amplify a current signal of the first and second current sensors; And
Further comprising first and second control signal amplifiers connected between the first and second comparators and the first and second transistors for amplifying the control signal or the current signal, respectively.

3. The method of claim 2,
The thermoelectric module comprises:
A Peltier element heated or cooled by the current in the forward direction or the reverse direction; And
And a temperature gauge disposed adjacent to the Peltier element and detecting the temperature of the Peltier element.

5. The method of claim 4,
And a temperature control module connected between the thermometer and the first and second comparators for outputting the control signal to the first to fourth transistors according to a temperature detected in the temperature gauge.

The method according to claim 1,
The H-bridge circuit includes first to fourth transistors disposed between an input terminal and ground,
The current control circuit comprising:
A first transistor having a first input end coupled to a first sensing node between the fourth transistor and the ground and having a first output end coupled to a gate of the first transistor for regulating the current in the forward direction, Mirror circuit; And
A second transistor having a second input end connected to a second sense node between the third transistor and the ground and having a second output end coupled to a gate of the second transistor for regulating the current in the reverse direction, A temperature control device comprising a current mirror circuit.

The method according to claim 6,
The first current mirror circuit comprising:
First and second phytochs transistors connected to a first power supply voltage terminal and having gates connected to the first output terminal; And
First and second emmos transistors connected between the first and second phytooos transistors and ground, respectively,

And a gate of the first enormous transistors is connected to the first input terminal.

The method according to claim 6,
Said second current mirror circuit comprising:
Third and fourth phytooos transistors having gates connected to a second power supply voltage terminal and connected to the second output terminal;
Third and fourth emmos transistors respectively connected between the third and fourth phytooos transistors and the ground,
And a gate of the third NMOS transistors is connected to the second input terminal.

The method according to claim 6,
The thermoelectric module comprises:
A Peltier element connected to first and second output stages of the HIS bridge circuit between the input terminal and the ground; And
And a thermocouple connected to the first and second output stages in parallel with the Peltier element, the thermocouple being disposed on the Peltier element.

12. The method of claim 11,
The current control module further includes an output control circuit,
The output control circuit comprising:
A Peltier output control circuit for controlling a current between the first and second output stages and the Peltier element; And
And a thermocouple output control circuit for controlling a current between the first and second output stages and the thermocouple.

11. The method of claim 10,
Wherein the thermocouple output control circuit includes transfer gates connected to the gates of the first transistors for controlling the thermocouples and the first and second output stages,
The transfer gates include:
A fifth NMOS transistor connected between the first output terminal and the thermocouple; And
And a fifth phycoast transistor connected between the second output terminal and the thermocouple.

12. The method of claim 11,
The temperature control device may further include a temperature control module having first and second sensing signal input terminals connected to the thermocouple and first to fourth control terminals connected to the first to fourth transistors,
The thermocouple output control circuit further comprises a thermocouple detection control circuit for connecting the thermocouple to the temperature control module,
The thermocouple detection control circuit comprising:
An inverter connected to the first control terminal and the first transistor to invert a control signal of the temperature control module;
A sixth phytoose transistor connected between the first sensing signal input terminal and the inverter for interrupting the temperature sensing signal at the first sensing signal input terminal according to the control signal inverted by the inverter; And
And a sixth enormous transistor connected between the second sensing signal input terminal and the inverter for controlling the temperature sensing signal of the second sensing signal input terminal according to the control signal.

12. The method of claim 11,
The Peltier output control circuit comprising:
A seventh MOS transistor connected between the Peltier element and the first output stage, the seventh MOS transistor being connected to a fourth output terminal of the first current mirror circuit and being turned on as opposed to the fifth emmos transistor; And
And an eighth transistor connected between the Peltier element and the second output stage, the eighth transistor being connected to the sixth output terminal of the second current mirror circuit and being turned on as opposed to the fifth emmos transistor.

Thermoelectric module;
A temperature control module for monitoring a temperature of the thermoelectric module; And
An H-bridge circuit for providing a current in the forward or reverse direction to the thermoelectric module according to a control signal of the temperature control module; and an H-bridge circuit for outputting current to the thermoelectric module in the H- And a current control module having a current control circuit for controlling the magnitude of the current.

15. The method of claim 14,
The H-bridge circuit includes first to fourth transistors arranged between an input voltage terminal and a ground to linearly control the current,
Wherein the temperature control module includes first to fourth control terminals for outputting control signals to the first to fourth transistors,
The current control circuit comprising:
First and second current sensors connected between the third and fourth transistors and ground to detect the current signal; And
And first and second comparators connected to the current sensors and the first and second control stages for comparing the control signal and the current signal to output the current signal to the first and second transistors.

16. The method of claim 15,
The current control circuit comprising:
First and second sense amplifiers connected between the current sensors and the comparators for amplifying a current signal of the first and second current sensors; And
Further comprising first and second control signal amplifiers connected between the first and second comparators and the first and second transistors for amplifying the control signal or the current signal, respectively.

17. The method of claim 16,
The thermoelectric module comprises:
A Peltier element heated or cooled by the current in the forward direction or the reverse direction; And
And a thermometer disposed adjacent to the Peltier element and measuring the temperature of the Peltier element,
Wherein the temperature control module further comprises a temperature detection stage coupled to the thermometer to detect the temperature of the Peltier element.

15. The method of claim 14,
The thermoelectric module comprises:
A palladium element heated or cooled by the current in the forward direction or the reverse direction; And
And a thermocouple disposed on the Peltier element and connected to the HI bridge circuit and the temperature sensing module.

19. The method of claim 18,
The H-bridge circuit includes first to fourth transistors disposed between an input terminal and ground,
The current control circuit comprising:
A first transistor having a first input end coupled to a first sensing node between the fourth transistor and the ground and having a first output end coupled to a gate of the first transistor for regulating the current in the forward direction, Mirror circuit; And
A second transistor having a second input end connected to a second sense node between the third transistor and the ground and having a second output end coupled to a gate of the second transistor for regulating the current in the reverse direction, A temperature control device comprising a current mirror circuit.

A test apparatus for testing a substrate;
A test control device for controlling the test apparatus; And
And a temperature control device for controlling the temperature of the substrate,
The temperature control apparatus comprises:
Thermoelectric module; And
A H-bridge circuit for providing a current in a forward direction or a reverse direction to the thermoelectric module; and a current control unit for controlling a magnitude of the current output from the H-bridge circuit to the thermoelectric module according to a current signal sensed by the H- A tester comprising a current control module with a circuit.