JP2003274672A - Semiconductor switching apparatus - Google Patents
Semiconductor switching apparatusInfo
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- JP2003274672A JP2003274672A JP2002070098A JP2002070098A JP2003274672A JP 2003274672 A JP2003274672 A JP 2003274672A JP 2002070098 A JP2002070098 A JP 2002070098A JP 2002070098 A JP2002070098 A JP 2002070098A JP 2003274672 A JP2003274672 A JP 2003274672A
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- Prior art keywords
- current
- temperature
- gate resistance
- sense
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Inverter Devices (AREA)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体スイッチ
ング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switching device.
【０００２】[0002]
【従来の技術】半導体スイッチング素子を用いた装置で
は、近年高速スイッチングが求められ高速化が進んでお
り、それに伴ってノイズを発生させることから周囲環境
で大きな問題となりつつある。従来はこのノイズ対策と
して半導体スイッチング素子のスイッチング速度を遅く
する(ゲート抵抗を大きくする)ことで対応してきたた
め、その場合、スイッチング損失の増加による温度上昇
が問題となってくる。2. Description of the Related Art In devices using semiconductor switching elements, high-speed switching has been required in recent years and has been increasing in speed, and noise is generated accordingly, which is becoming a serious problem in the surrounding environment. In the past, as a countermeasure against this noise, the switching speed of the semiconductor switching element was slowed (the gate resistance was increased), and in that case, the temperature rise due to the increased switching loss becomes a problem.
【０００３】[0003]
【発明が解決しようとする課題】特開平５−３２８７４
６では、電流だけをモニタして低電流時にゲート抵抗を
大きくしてノイズを低減する一方、大電流時にはゲート
抵抗を小さくして、スイッチング損失を低減するノイズ
対策を行っているが、後で示すように、サージ電圧が出
やすい大電流のターンオフ時に、ゲート抵抗が小さくな
っているため、サージ電圧を抑制することは困難であっ
た。[Patent Document 1] Japanese Patent Application Laid-Open No. 5-32874
In No. 6, while only the current is monitored, the noise is reduced by increasing the gate resistance when the current is low and the noise is reduced by decreasing the gate resistance when the current is high, but this will be described later. As described above, it is difficult to suppress the surge voltage because the gate resistance becomes small at the time of turning off the large current in which the surge voltage is likely to occur.
【０００４】この発明は、サージ電圧およびノイズを低
減できる半導体スイッチング装置を提供することを目的
とする。An object of the present invention is to provide a semiconductor switching device capable of reducing surge voltage and noise.
【０００５】[0005]
【課題を解決するための手段】本発明は、半導体スイッ
チング素子を含む半導体スイッチング装置において、半
導体スイッチング素子の電流を検出する電流センスおよ
び前記素子の温度を検出する温度センスを備え、前記電
流センスで検出した電流が所定値以下の場合、前記スイ
ッチング素子のゲート抵抗値をＲ１としてノイズ発生を
低減し、前記電流センスで検出した電流が所定値を超え
る場合でかつ、前記温度センスで検出した温度が所定温
度を超える場合、前記ゲート抵抗値をＲ１より小さいＲ
２としてスイッチング損失を低減し、前記電流センスで
検出した電流が所定値を超える場合でかつ、前記温度セ
ンスで検出した温度が所定温度以下の場合、前記スイッ
チング素子のゲート抵抗値をＲ１としてノイズを低減し
たことを特徴とする。SUMMARY OF THE INVENTION The present invention provides a semiconductor switching device including a semiconductor switching element, comprising a current sense for detecting the current of the semiconductor switching element and a temperature sense for detecting the temperature of the element. When the detected current is less than or equal to a predetermined value, noise is reduced by setting the gate resistance value of the switching element to R1, and when the current detected by the current sense exceeds a predetermined value and the temperature detected by the temperature sense is When the temperature exceeds a predetermined temperature, the gate resistance value is set to R smaller than R1.
When the switching loss is reduced to 2 and the current detected by the current sense exceeds a predetermined value and the temperature detected by the temperature sense is equal to or lower than a predetermined temperature, noise is set by setting the gate resistance value of the switching element to R1. It is characterized by the reduction.
【０００６】[0006]
【発明の実施の形態】実施形態１
図１に本発明の第１の実施形態を示す。１は半導体スイ
ッチング素子(ＩＧＢＴやＭＯＳＦＥＴなど)である。２
は、駆動回路であり、その出力部は抵抗３を通じてＩＧ
ＢＴ１のゲートに接続される。そして、補助の抵抗４と
直列にスイッチ５を接続したものが前記抵抗３と並列に
接続される。スイッチ５としては、ＩＧＢＴ、ＭＯＳＦ
ＥＴ、トランジスタなどの半導体スイッチであってもよ
い。６はスイッチ５をオンオフ制御する制御回路であ
り、この制御回路６により、前記２〜５の要素からなる
他の回路１０も同様に制御する。Embodiment 1 FIG. 1 shows a first embodiment of the present invention. Reference numeral 1 is a semiconductor switching element (IGBT, MOSFET or the like). Two
Is a drive circuit, the output of which is connected through the resistor 3 to the IG
Connected to the gate of BT1. A switch 5 connected in series with the auxiliary resistor 4 is connected in parallel with the resistor 3. As the switch 5, IGBT, MOSF
It may be a semiconductor switch such as an ET or a transistor. A control circuit 6 controls ON / OFF of the switch 5, and the control circuit 6 also controls the other circuit 10 including the elements 2 to 5 in the same manner.
【０００７】１１はスイッチング素子１自身の動作温度
をモニタする温度センスであり、それ以外にもモジュー
ル内部のパターンをモニタしたり、放熱フィンをモニタ
するものであってもよい。この温度センス１１は一定温
度以上を検知するとスイッチ１３をオンにする。１２
は、スイッチング素子１に流れる電流を検出する電流セ
ンスである。このスイッチング素子１は通常、図４に示
すように、３相ブリッジにして組み込まれる。電流セン
ス１２は、スイッチング素子１に流れる主電流を検出す
るか、負荷(Ｍ：モータ)電流を検出する。この電流セン
ス１２は、一定電流以上を検知すると、スイッチ１４を
オンにする。Reference numeral 11 is a temperature sense for monitoring the operating temperature of the switching element 1 itself, and other than that, it may be one for monitoring the pattern inside the module or for monitoring the heat radiation fin. The temperature sense 11 turns on the switch 13 when it detects a certain temperature or higher. 12
Is a current sense for detecting a current flowing through the switching element 1. The switching element 1 is usually incorporated as a three-phase bridge as shown in FIG. The current sense 12 detects a main current flowing through the switching element 1 or a load (M: motor) current. The current sense 12 turns on the switch 14 when detecting a constant current or more.
【０００８】１５はフォトカプラであり、前記スイッチ
１３、１４を介して電池Ｅに接続されている。両スイッ
チ１３、１４がオンになると、フォトカプラ１５が作用
して、前記制御回路６へ所定の信号を供給する。このフ
ォトカプラ１５を用いたのは、スイッチング素子側の高
電位から電気的に絶縁するためである。Reference numeral 15 is a photocoupler, which is connected to the battery E through the switches 13 and 14. When both switches 13 and 14 are turned on, the photocoupler 15 operates to supply a predetermined signal to the control circuit 6. The photocoupler 15 is used to electrically insulate it from the high potential on the switching element side.
【０００９】主電流もしくは負荷電流が一定値未満のと
きはスイッチ１３、１４は共にオフであり、従ってスイ
ッチ５もオフになっており、駆動回路２からのゲート信
号は抵抗３を通ってＩＧＢＴ１のゲートに供給され、こ
の時のゲート抵抗は比較的大きい抵抗３であるためノイ
ズが低減される。When the main current or the load current is less than a certain value, the switches 13 and 14 are both off, and therefore the switch 5 is also off, and the gate signal from the drive circuit 2 passes through the resistor 3 to the IGBT 1. The noise is reduced because the gate resistance supplied to the gate is the resistance 3 which is relatively large at this time.
【００１０】一方、主電流もしくは負荷電流が一定値を
超え、かつ、スイッチング素子１の動作温度が一定温度
より高い場合には、スイッチ１３、１４が共にオンし、
これにより、制御回路６によってスイッチ５がオンにさ
れると、前記ゲート信号は、並列接続の抵抗３および４
を流れてゲートに供給され、この場合のゲート抵抗が抵
抗３より小さくなるためスイッチング損失が低減され
る。On the other hand, when the main current or the load current exceeds a certain value and the operating temperature of the switching element 1 is higher than the certain temperature, both the switches 13 and 14 are turned on,
Accordingly, when the switch 5 is turned on by the control circuit 6, the gate signal causes the resistors 3 and 4 connected in parallel.
Is supplied to the gate, and the gate resistance in this case is smaller than the resistance 3, so that the switching loss is reduced.
【００１１】一方、主電流もしくは負荷電流が一定値を
超えた場合(スイッチ１４がオン)でも、スイッチング素
子１の動作温度が一定温度より低い場合(スイッチ１３
はオフ)は、スイッチ５はオフになる。このような場合
には後で示すようにノイズ発生量が大きくなっている
が、スイッチ５のオフにより、ゲート抵抗を大きくして
ノイズの発生が抑制される。On the other hand, even when the main current or the load current exceeds a certain value (the switch 14 is turned on), the operating temperature of the switching element 1 is lower than the certain temperature (the switch 13).
Switch is turned off. In such a case, the amount of noise generated is large as will be shown later, but turning off the switch 5 increases the gate resistance to suppress the generation of noise.
【００１２】図２にスイッチング素子１のターンオン時
の特性を示す。(Ａ)図は、低電流で使用するとノイズ発
生量が多く、大電流になるほど小さくなることを示して
いる。(Ｂ)図は、ゲート抵抗ＲGが大きくなるとノイズ
発生が少なくなるが、低電流ではゲート抵抗ＲGに対す
るノイズ発生量の依存性が大きくなることを示し、温度
に依存しない。(Ｃ)図は、電流が一定値以上になったと
き、ゲート抵抗ＲGを小さくすることでスイッチング損
失を低減できることを示している。FIG. 2 shows the characteristics when the switching element 1 is turned on. The graph (A) shows that the amount of noise generated is large when used at a low current, and becomes smaller as the current becomes larger. The graph (B) shows that the noise generation decreases as the gate resistance RG increases, but the dependency of the noise generation amount on the gate resistance RG increases at low current, and does not depend on the temperature. The graph (C) shows that when the current exceeds a certain value, the switching loss can be reduced by reducing the gate resistance RG.
【００１３】図３にスイッチング素子１のターンオフ時
の特性を示す。(Ａ)図は、電流が大きくなればノイズ発
生量が多くなり、(Ｂ)図は、ゲート抵抗ＲGが大きくな
るとノイズ発生量が少なくなることを示し、共に温度依
存性が大きく、高温になるとでノイズ発生量が少なくな
る。(Ｃ)図は、電流が一定値以上になったとき、ゲート
抵抗ＲGを小さくすることでスイッチング損失を低減で
きることを示している。FIG. 3 shows the characteristics of the switching element 1 when it is turned off. The graph (A) shows that the noise generation amount increases as the current increases, and the graph (B) shows that the noise generation amount decreases as the gate resistance RG increases, and both have large temperature dependence and high temperature. This reduces the amount of noise generated. The graph (C) shows that when the current exceeds a certain value, the switching loss can be reduced by reducing the gate resistance RG.
【００１４】実施形態２
図５に本発明の第２の実施形態を示す。ゲート抵抗Ｒ３
と並列接続した(抵抗４−スイッチ５)以外に、(抵抗４
１−スイッチ５１)、…(抵抗４ｎ−スイッチ５ｎ)を必
要個数だけ並列接続している。そして制御回路６は、電
流センス１２および温度センス１１の検出状況に応じ
て、いずれか１つもしくは複数個のスイッチをオンする
ことで、ノイズ発生量とスイッチング損失を最適化す
る。Embodiment 2 FIG. 5 shows a second embodiment of the present invention. Gate resistance R3
In addition to (resistor 4-switch 5) connected in parallel with (resistor 4
The required number of 1-switches 51), ... (Resistance 4n-Switch 5n) are connected in parallel. Then, the control circuit 6 optimizes the noise generation amount and the switching loss by turning on any one or a plurality of switches according to the detection states of the current sense 12 and the temperature sense 11.
【００１５】図１および図５では、ゲート抵抗３に対し
て抵抗を並列に接続したが、図６に示すように、抵抗
３'および４'を直列接続とし、抵抗４'を短絡するため
のスイッチ５を接続するようにしてもよい。In FIGS. 1 and 5, the resistor is connected in parallel to the gate resistor 3, but as shown in FIG. 6, the resistors 3'and 4'are connected in series and the resistor 4'is short-circuited. The switch 5 may be connected.
【００１６】実施形態３
上記半導体素子１をモジュールタイプとし、そのモジュ
ール内でコレクタ電流、エミッタ電流もしくは負荷電流
および素子の温度を検出し、その検出状況に応じてモジ
ュール内でゲート抵抗を最適な値に切替えるようにして
ノイズの低減を図る。Embodiment 3 The semiconductor element 1 is of a module type, the collector current, the emitter current or the load current and the element temperature are detected in the module, and the gate resistance in the module is set to an optimum value according to the detected condition. Switch to to reduce noise.
【００１７】上記電流センス１１、温度センス１２およ
びゲート抵抗変更のための回路を半導体スイッチング素
子と共にワンパッケージ化すれば、半導体スイッチング
装置をコンパクトに構成することができる。A semiconductor switching device can be made compact if the circuits for current sense 11, temperature sense 12, and gate resistance change are packaged together with a semiconductor switching element.
【００１８】[0018]
【発明の効果】この請求項１の発明は、負荷電流が所定
値以下の場合、ゲート抵抗値を大きくしてノイズ発生を
低減し、負荷電流が所定値を超える場合でかつ、素子温
度が所定温度を超える場合、ゲート抵抗を小さくするこ
とにより、スイッチング損失が低減され熱破壊が防止さ
れる。そして、負荷電流が所定値を超える場合であって
も、素子温度が所定温度以下の場合は、ゲート抵抗を大
きくすることで、スイッチング損失の低減よりはむし
ろ、ノイズ低減を図る。According to the invention of claim 1, when the load current is less than or equal to a predetermined value, the gate resistance value is increased to reduce noise generation, and when the load current exceeds the predetermined value and the element temperature is at a predetermined value. When the temperature is exceeded, the gate resistance is reduced to reduce switching loss and prevent thermal destruction. Even if the load current exceeds the predetermined value, if the element temperature is equal to or lower than the predetermined temperature, the gate resistance is increased to reduce noise rather than reduce switching loss.
【００１９】請求項２の発明は、ゲート抵抗として複数
の抵抗値を備え、電流センスおよび温度センスの検出結
果に基づき、適切な抵抗値を選出するようにしたので、
所望のノイズ抑制およびスイッチング損失を達成するこ
とができる。According to the invention of claim 2, a plurality of resistance values are provided as the gate resistance, and an appropriate resistance value is selected based on the detection results of the current sense and the temperature sense.
The desired noise suppression and switching losses can be achieved.
【００２０】請求項３の発明は、上記電流センス、温度
センスおよびゲート抵抗変更手段を半導体スイッチング
素子と共にワンパッケージ化するものであり、半導体ス
イッチング装置のコンパクト化が図れる。According to a third aspect of the present invention, the current sensing, temperature sensing and gate resistance changing means are packaged together with a semiconductor switching element in one package, and the semiconductor switching device can be made compact.
【図１】 本発明の第１の実施形態を示した制御ブロッ
ク図FIG. 1 is a control block diagram showing a first embodiment of the present invention.
【図２】 スイッチング素子のターンオン時の特性を示
した図FIG. 2 is a diagram showing characteristics of a switching element at turn-on.
【図３】 スイッチング素子のターンオフ時の特性を示
した図FIG. 3 is a diagram showing characteristics of a switching element at turn-off.
【図４】 図１の回路を適用した般の回路図FIG. 4 is a general circuit diagram to which the circuit of FIG. 1 is applied.
【図５】 本発明の第２の実施形態を示した制御ブロッ
ク図FIG. 5 is a control block diagram showing a second embodiment of the present invention.
【図６】 図１の制御ブロック図の変形例を示した図FIG. 6 is a diagram showing a modification of the control block diagram of FIG.
１ スイッチング素子、２ 駆動回路、３ 抵抗、４
抵抗、５ スイッチ、６制御回路、１１ 温度センス、
１２ 電流センス、１３、１４ スイッチ、１５ フォ
トカプラ1 switching element, 2 drive circuit, 3 resistor, 4
Resistor, 5 switch, 6 control circuit, 11 temperature sense,
12 current sense, 13, 14 switch, 15 photo coupler
Claims (3)
イッチング装置において、 半導体スイッチング素子の電流を検出する電流センスお
よび前記素子の温度を検出する温度センスを備え、 前記電流センスで検出した電流が所定値以下の場合、前
記スイッチング素子のゲート抵抗値をＲ１とし、 前記電流センスで検出した電流が所定値を超える場合で
かつ、前記温度センスで検出した温度が所定温度を超え
る場合、前記ゲート抵抗値をＲ１より小さいＲ２とし、 前記電流センスで検出した電流が所定値を超える場合で
かつ、前記温度センスで検出した温度が所定温度以下の
場合、前記スイッチング素子のゲート抵抗値をＲ１とし
たことを特徴とする半導体スイッチング装置。1. A semiconductor switching device including a semiconductor switching element, comprising a current sense for detecting a current of the semiconductor switching element and a temperature sense for detecting a temperature of the element, wherein the current detected by the current sense is equal to or less than a predetermined value. In this case, the gate resistance value of the switching element is R1, and when the current detected by the current sense exceeds a predetermined value and the temperature detected by the temperature sense exceeds a predetermined temperature, the gate resistance value is more than R1. When the current detected by the current sense exceeds a predetermined value and the temperature detected by the temperature sense is equal to or lower than a predetermined temperature, the gate resistance value of the switching element is set to R1. Semiconductor switching device.
電流センスおよび温度センスの検出結果に基づき、適切
な抵抗値を選出する請求項１記載の半導体スイッチング
装置。2. A gate resistance having a plurality of resistance values,
The semiconductor switching device according to claim 1, wherein an appropriate resistance value is selected based on detection results of current sense and temperature sense.
ト抵抗変更手段を半導体スイッチング素子と共にワンパ
ッケージ化したことを特徴とする請求項１もしくは２記
載の半導体スイッチング装置。3. The semiconductor switching device according to claim 1, wherein the current sensing, temperature sensing and gate resistance changing means are packaged together with a semiconductor switching element in one package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002070098A JP3820167B2 (en) | 2002-03-14 | 2002-03-14 | Semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002070098A JP3820167B2 (en) | 2002-03-14 | 2002-03-14 | Semiconductor switching device |
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| Publication Number | Publication Date |
|---|---|
| JP2003274672A true JP2003274672A (en) | 2003-09-26 |
| JP3820167B2 JP3820167B2 (en) | 2006-09-13 |
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| JP2002070098A Expired - Lifetime JP3820167B2 (en) | 2002-03-14 | 2002-03-14 | Semiconductor switching device |
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