JPH0727872B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPH0727872B2 JPH0727872B2 JP63220862A JP22086288A JPH0727872B2 JP H0727872 B2 JPH0727872 B2 JP H0727872B2 JP 63220862 A JP63220862 A JP 63220862A JP 22086288 A JP22086288 A JP 22086288A JP H0727872 B2 JPH0727872 B2 JP H0727872B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- reaction gas
- nozzle
- phase
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は気相成長装置に関し、特に反応容器を縦に立て
た気相成長装置に関するものである。TECHNICAL FIELD The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus in which a reaction vessel is set upright.
第５及び６図は従来の気相成長装置を示したものであ
る。この種の縦型の気相成長装置は、種々の成膜に使わ
れているが、Siエピタキシャル成長について説明する。
基板ホルダー４に単結晶基板５をある間隔で水平に積み
重ねる様に保持し、減圧下で900℃〜1200℃程度に加熱
してその基板表面にジクロロシラン（SiH2Cl2）等のシ
ラン系ガス、水素（H2）及びドーピングガスを導入して
エピタキシャル成長させるものとなっていた。5 and 6 show a conventional vapor phase growth apparatus. This type of vertical vapor deposition apparatus has been used for various film formations, but Si epitaxial growth will be described.
The single crystal substrates 5 are held in the substrate holder 4 so as to be horizontally stacked at a certain interval, and heated to about 900 ° C. to 1200 ° C. under reduced pressure, and a silane-based gas such as dichlorosilane (SiH 2 Cl 2 ) is applied to the substrate surface. , Hydrogen (H 2 ) and a doping gas were introduced for epitaxial growth.
反応容器は２重構造で、外管１で真空を保持し回転する
単結晶基板５にノズル管７を用いて反応ガスを供給す
る。反応ガスは内管２の円筒面に設けられた多数のガス
排出孔８を通って排出される。The reaction container has a double structure, and the nozzle tube 7 is used to supply the reaction gas to the rotating single crystal substrate 5 which holds the vacuum in the outer tube 1. The reaction gas is discharged through a number of gas discharge holes 8 provided on the cylindrical surface of the inner pipe 2.
上述した従来の気相エピタキシャル成長装置は、単結晶
基板５に反応ガスを供給するためのノズル管７が一本で
あるため、反応容器を高くして多数枚の基板結晶にエピ
タキシャル成長させようとすると、ノズル７が長くな
り、反応ガスはノズル管上流である下側の放出孔10から
主に放出されノズル管下流である上側の放出孔10から噴
出されるガスの流量が減少するという欠点がある。気相
成長法で基板結晶間の膜厚を均一にするためには各基板
結晶に供給する反応ガス流を一定にすることが必要であ
るが、従来の装置では、ノズル管の各放出孔から噴出さ
れる反応ガスの流量を一定にすることがむづかしく、基
板間の膜厚均一性が上がらないという欠点がある。In the conventional vapor phase epitaxial growth apparatus described above, since the single nozzle tube 7 for supplying the reaction gas to the single crystal substrate 5 is provided, when the reaction vessel is raised and a large number of substrate crystals are epitaxially grown, There is a drawback that the nozzle 7 becomes longer, the reaction gas is mainly discharged from the lower discharge hole 10 upstream of the nozzle pipe, and the flow rate of the gas ejected from the upper discharge hole 10 downstream of the nozzle pipe is reduced. In order to make the film thickness between the substrate crystals uniform by the vapor phase growth method, it is necessary to keep the flow of the reaction gas supplied to each substrate crystal constant. It is difficult to keep the flow rate of the ejected reaction gas constant, and there is a drawback that the film thickness uniformity between the substrates cannot be improved.
本発明によれば、複数枚の被気相成長基板を所定の間隔
で水平に積み重ねるように保持し、複数の反応ガス放出
孔を有するノズル管より前記複数枚の被気相成長基板の
それぞれの被気相成長面にほぼ平行に前記反応ガスを流
し、前記被気相成長面に膜を気相成長させる気相成長装
置において、前記ノズル管は両端部がそれぞれ接続され
たほぼ平行な２本のノズル管より形成され、一方の該ノ
ズル管には、その側面の長手方向に前記複数の反応ガス
放出孔を有し、他方の前記ノズル管の長手方向のほぼ中
央部に前記反応ガスが導入される導入口を有する構造と
なっている気相成長装置が得られる。According to the present invention, a plurality of vapor-phase-grown substrates are held so as to be horizontally stacked at a predetermined interval, and each of the plurality of vapor-phase-grown substrates is supported by a nozzle tube having a plurality of reaction gas emission holes. In a vapor phase growth apparatus in which the reaction gas is caused to flow substantially parallel to a vapor phase growth surface and a film is vapor-phase grown on the vapor phase growth surface, the nozzle tube has two substantially parallel ends connected to each other. Nozzle pipe, one of the nozzle pipes has the plurality of reaction gas discharge holes in the longitudinal direction of its side surface, and the other reaction gas is introduced into the nozzle pipe at a substantially central portion in the longitudinal direction. A vapor phase growth apparatus having a structure having an introduction port can be obtained.
また、前記２本のノズル管が接続された両端部の内どち
らか一方の接続部付近に前記反応ガスが導入される導入
口を設けた気相成長装置が得られる。Further, it is possible to obtain a vapor phase growth apparatus in which an inlet for introducing the reaction gas is provided in the vicinity of either one of both end portions where the two nozzle tubes are connected to each other.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例の縦断面図である。本装
置は、装置を支えるための架台３、外管１と内管２から
成る２重構造の反応管、単結晶基板５を保持するための
基板ホルダー４、抵抗加熱炉６及び反応ガスを供給する
ノズル管７から構成される。反応ガスはノズル管７より
噴出され内管壁面に設けられたガス排出孔８を通り排気
口９から排気される。ノズル管７は第２図に示すよう
に、最上部及び最下部が接続されたほぼ平行な２本のノ
ズル管から構成されており、一方には単結晶基板５が設
けられる位置に対応した反応ガス放出孔を有し、他方は
反応ガス導入口をその中央部に有している。そのため、
ノズル管７の上部の先端付近の放出孔10から噴出される
反応ガスであっても噴出流量が減少せずすべての基板５
に供給される反応ガス量が一定となるため、基板結晶５
間の膜厚均一性が高いエピタキシャル膜を量産できる。FIG. 1 is a vertical sectional view of the first embodiment of the present invention. This apparatus is provided with a pedestal 3 for supporting the apparatus, a reaction tube having a double structure including an outer tube 1 and an inner tube 2, a substrate holder 4 for holding a single crystal substrate 5, a resistance heating furnace 6 and a reaction gas. It is composed of the nozzle tube 7. The reaction gas is ejected from the nozzle pipe 7 and is exhausted from the exhaust port 9 through the gas exhaust hole 8 provided on the inner wall surface of the inner pipe. As shown in FIG. 2, the nozzle tube 7 is composed of two substantially parallel nozzle tubes having the uppermost part and the lowermost part connected to each other, and the reaction corresponding to the position where the single crystal substrate 5 is provided on one side. The other has a gas discharge hole, and the other has a reaction gas introduction port in its central portion. for that reason,
Even if the reaction gas is ejected from the emission hole 10 near the tip of the upper portion of the nozzle tube 7, the ejection flow rate does not decrease and all the substrates 5
Since the amount of reaction gas supplied to the substrate is constant, the substrate crystal 5
It is possible to mass-produce an epitaxial film having a high film thickness uniformity.
以下に、本実施例による気相成長装置を使用したエピタ
キシャル膜の成長例を説明する。基板ホルダー４に直径
150mmのシリコン結晶基板５を8mm間隔で100枚セット
し、１分間に５回転の回転数（5rpm）で基板ホルダー４
を回転させ、反応管内温度を抵抗加熱炉６により1050℃
とした。ノズル管７よりH2を20l/min、SiH2Cl2を200ml/
minPH3を2ml/minで流し5torr圧力でシリコン単結晶基板
５上にＮ型のシリコンエピタキシャル膜を厚さ５μｍ成
長させた。この結果を第５図、第６図に示した従来の装
置でエピタキシャル膜を成長させた場合の結果と比較し
て説明する。第３図は従来の成長装置及び本実施例の成
長装置を用いた場合の基板間膜厚分布を示したものであ
る。従来の成長装置を用いた場合、ノズル管上流側であ
る下段に配置した50枚の基板間膜厚分布は良好であった
が、下流側である上段に配置した基板では、下流ほど膜
厚が徐々に減少し膜厚分布が大きい。これに対し、本実
施例の成長装置では、基板間膜厚分布が著しく改善さ
れ、全領域の基板に対し±５％の良好な膜厚分布が得ら
れた。又基板間の抵抗分布も同様に改善された。Hereinafter, an example of growing an epitaxial film using the vapor phase growth apparatus according to this example will be described. Substrate holder 4 diameter
100 pieces of 150 mm silicon crystal substrates 5 are set at 8 mm intervals, and the substrate holder 4 is rotated at 5 revolutions per minute (5 rpm).
The temperature inside the reaction tube by a resistance heating furnace 6 at 1050 ° C.
And Of H 2 from the nozzle pipe 7 20l / min, the SiH 2 Cl 2 200ml /
An N-type silicon epitaxial film was grown to a thickness of 5 μm on the silicon single crystal substrate 5 at a pressure of 5 torr by flowing minPH 3 at 2 ml / min. This result will be described in comparison with the result when the epitaxial film is grown by the conventional apparatus shown in FIGS. FIG. 3 shows the film thickness distribution between the substrates when the conventional growth apparatus and the growth apparatus of this embodiment are used. When the conventional growth apparatus was used, the film thickness distribution between the 50 substrates arranged in the lower stage on the upstream side of the nozzle tube was good, but in the substrate arranged in the upper stage on the downstream side, the film thickness became more downstream. It gradually decreases and the film thickness distribution is large. On the other hand, in the growth apparatus of this example, the inter-substrate film thickness distribution was remarkably improved, and a favorable film thickness distribution of ± 5% was obtained for the entire region of the substrate. Also, the resistance distribution between the substrates was similarly improved.
次に、反応ガス種をH220l/min、SiH2Cl2を200ml/min,B2
H6,2ml/minとして、Ｐ型シリコンエピタキシャル膜を成
長した本発明の第２の実施例について説明する。反応ガ
ス以外は第１の実施例と同条件で成長した。この場合に
おいても同様に基板間膜厚均一性の高いエピタキシャル
膜を成長できた。Next, the reaction gas species was H 2 20 l / min, SiH 2 Cl 2 was 200 ml / min, and B 2
A second embodiment of the present invention in which a P-type silicon epitaxial film is grown with H 6 of 2 ml / min will be described. The growth was performed under the same conditions as in the first example except for the reaction gas. In this case as well, an epitaxial film with high film thickness uniformity between substrates could be grown.
第４図は本発明の第３の実施例のノズル管拡大概略図で
ある。反応ガス放出孔10の付いたノズル管最下部でガス
流を分岐するバイパス管を付けた構造になっている。ノ
ズル管以外は第１の実施例と同一構造とした。この場合
も、第１あるいは第２の実施例と同等の基板間膜厚均一
性、抵抗率均一性を有するエピタキシャル膜を成長でき
た。本実施例のノズル管は、第１の実施例のそれと比較
して、構造が単純であるため、製造時の加工が簡単であ
り、しかも第１の実施例の場合とほぼ同等の膜厚や抵抗
率の均一性を得ることができるという利点がある。FIG. 4 is an enlarged schematic view of the nozzle tube according to the third embodiment of the present invention. It has a structure in which a bypass pipe for branching the gas flow is attached at the lowermost portion of the nozzle pipe having the reaction gas discharge hole 10. The structure is the same as that of the first embodiment except for the nozzle tube. Also in this case, it was possible to grow an epitaxial film having the same film thickness uniformity between substrates and resistivity uniformity as in the first or second embodiment. The nozzle tube of the present embodiment has a simpler structure than that of the first embodiment, so that the manufacturing process is easy, and the thickness of the nozzle tube is almost equal to that of the first embodiment. There is an advantage that uniformity of resistivity can be obtained.
以上説明したように本発明は、気相成長装置のノズル管
が最上部及び最下部で接続されたほぼ平行な２本のノズ
ル管から構成されており、一方はガス放出孔を有し他方
は反応ガス導入口を有するため、反応ガスは、全基板結
晶に対し均一に供給される。その結果、基板間の膜厚均
一性を向上させる効果がある。As described above, in the present invention, the nozzle tube of the vapor phase growth apparatus is composed of two substantially parallel nozzle tubes connected at the top and the bottom, one of which has a gas release hole and the other of which has Since the reaction gas inlet is provided, the reaction gas is uniformly supplied to all the substrate crystals. As a result, there is an effect of improving the film thickness uniformity between the substrates.
また、以上シリコンエピタキシャル成長を例に説明して
きたが、各種の酸化膜、窒化膜、ポリシリコン膜、アモ
ルファスシリコン膜などの成膜にも適用できるものであ
り、その応用価値はきわめて大きい。Further, although silicon epitaxial growth has been described above as an example, it can be applied to the formation of various oxide films, nitride films, polysilicon films, amorphous silicon films, etc., and its application value is extremely large.
第１図は本発明の一実施例の気相エピタキシャル成長装
置の縦断面図、第２図は本発明の第１の実施例の気相エ
ピタキシャル成長装置のノズル管拡大概略図、第３図は
本発明の第１の実施例による気相エピタキシャル成長装
置を用いて成長した基板間膜厚分布を示した図、第４図
は本発明の第３の実施例の気相エピタキシャル成長装置
のノズル管拡大概観図、第５図は従来の気相エピタキシ
ャル成長装置の縦断面図、第６図は従来の気相エピタキ
シャル成長装置のノズル拡大概観図である。 １……外管、２……内管、３……架台、４……基板ホル
ダー、５……単結晶基板、６……抵抗加熱炉、７……ノ
ズル管、８……ガス排出孔、９……排気口、10……ガス
放出孔。FIG. 1 is a vertical sectional view of a vapor phase epitaxial growth apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged schematic view of a nozzle tube of the vapor phase epitaxial growth apparatus according to the first embodiment of the present invention, and FIG. Showing the inter-substrate film thickness distribution grown using the vapor phase epitaxial growth apparatus according to the first embodiment of FIG. 4, and FIG. 4 is an enlarged schematic view of the nozzle tube of the vapor phase epitaxial growth apparatus of the third embodiment of the present invention, FIG. 5 is a vertical sectional view of a conventional vapor phase epitaxial growth apparatus, and FIG. 6 is an enlarged schematic view of nozzles of the conventional vapor phase epitaxial growth apparatus. 1 ... Outer tube, 2 ... Inner tube, 3 ... Stand, 4 ... Substrate holder, 5 ... Single crystal substrate, 6 ... Resistance heating furnace, 7 ... Nozzle tube, 8 ... Gas discharge hole, 9 ... Exhaust port, 10 ... Gas release hole.
Claims (2)
平に積み重ねるように保持し、複数の反応ガス放出孔を
有するノズル管より前記複数枚の被気相成長基板のそれ
ぞれの被気相成長面にほぼ平行に前記反応ガスを流し、
前記被気相成長面に膜を気相成長させる気相成長装置に
おいて、前記ノズル管は両端部がそれぞれ接続されたほ
ぼ平行な２本のノズル管より形成され、一方の該ノズル
管には、その側面の長手方向に前記複数の反応ガス放出
孔を有し、他方の前記ノズル管の長手方向のほぼ中央部
に前記反応ガスが導入される導入口を有する構造となっ
ていることを特徴とする気相成長装置。1. A plurality of vapor-phase-grown substrates are held so as to be horizontally stacked at a predetermined interval, and each of the plurality of vapor-phase-grown substrates is supported by a nozzle tube having a plurality of reaction gas emission holes. Flowing the reaction gas substantially parallel to the vapor growth surface,
In the vapor-phase growth apparatus for vapor-depositing a film on the vapor-phase-grown surface, the nozzle tube is formed by two substantially parallel nozzle tubes each having both ends connected to each other, and one of the nozzle tubes has: It has a structure having a plurality of reaction gas discharge holes in the longitudinal direction of its side surface and an introduction port into which the reaction gas is introduced in a substantially central portion in the longitudinal direction of the other nozzle tube. Vapor growth equipment.
平に積み重ねるように保持し、複数の反応ガス放出孔を
有するノズル管より前記複数枚の被気相成長基板のそれ
ぞれの被気相成長面にほぼ平行に前記反応ガスを流し、
前記被気相成長面に膜を気相成長させる気相成長装置に
おいて、前記ノズル管は両端部がそれぞれ接続されたほ
ぼ平行な２本のノズル管より形成され、一方の該ノズル
管には、その側面の長手方向に前記複数の反応ガス放出
孔を有し、かつ前記２本のノズル管が接続された両端部
の内どちらか一方の接続部付近に前記反応ガスが導入さ
れる導入口が設けられていることを特徴とする気相成長
装置。2. A plurality of vapor-phase grown substrates are held so as to be horizontally stacked at a predetermined interval, and each of the plurality of vapor-phase grown substrates is held by a nozzle tube having a plurality of reaction gas emission holes. Flowing the reaction gas substantially parallel to the vapor growth surface,
In the vapor-phase growth apparatus for vapor-depositing a film on the vapor-phase-grown surface, the nozzle tube is formed by two substantially parallel nozzle tubes each having both ends connected to each other, and one of the nozzle tubes has: The reaction gas discharge holes are provided in the longitudinal direction of the side surface, and an introduction port for introducing the reaction gas is provided in the vicinity of either one of both ends of the two nozzle tubes connected to each other. A vapor phase growth apparatus characterized by being provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63220862A JPH0727872B2 (en) | 1987-09-22 | 1988-09-02 | Vapor phase growth equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-239603 | 1987-09-22 | ||
| JP23960387 | 1987-09-22 | ||
| JP63220862A JPH0727872B2 (en) | 1987-09-22 | 1988-09-02 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01157519A JPH01157519A (en) | 1989-06-20 |
| JPH0727872B2 true JPH0727872B2 (en) | 1995-03-29 |
Family
ID=26523951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63220862A Expired - Fee Related JPH0727872B2 (en) | 1987-09-22 | 1988-09-02 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727872B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0997768A (en) * | 1995-09-28 | 1997-04-08 | Nec Kyushu Ltd | Vertical diffusion oven |
| JP5137462B2 (en) * | 2007-05-21 | 2013-02-06 | 株式会社日立国際電気 | Substrate processing apparatus, gas supply unit, and thin film forming method |
| JP2010141223A (en) * | 2008-12-15 | 2010-06-24 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device and substrate processing apparatus |
| KR20120038632A (en) | 2010-10-14 | 2012-04-24 | 삼성전자주식회사 | Solar cell manufacturing method |
| KR102256105B1 (en) * | 2019-12-13 | 2021-05-27 | 주식회사 금강쿼츠 | A preheating tow way pipe nozzle for a semiconductor device fabrication |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5817612A (en) * | 1981-07-24 | 1983-02-01 | Toshiba Corp | Film forming device by glow discharge |
-
1988
- 1988-09-02 JP JP63220862A patent/JPH0727872B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01157519A (en) | 1989-06-20 |
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