JPH07263475A - Protective resin casting mold - Google Patents
Protective resin casting moldInfo
- Publication number
- JPH07263475A JPH07263475A JP4625894A JP4625894A JPH07263475A JP H07263475 A JPH07263475 A JP H07263475A JP 4625894 A JP4625894 A JP 4625894A JP 4625894 A JP4625894 A JP 4625894A JP H07263475 A JPH07263475 A JP H07263475A
- Authority
- JP
- Japan
- Prior art keywords
- casting
- protective resin
- semiconductor substrate
- resin
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ダイオード,逆阻止三
端子サイリスタ(SCR),ゲートターンオフサイリス
タ(GTO)及び逆導通型ゲートターンオフサイリスタ
(RC−GTO)などの半導体基体を基板に固着しない
でその両面に電極体を加圧接触させるアロイフリー型の
平型半導体装置の半導体基体外周部に保護樹脂を注型し
て形成するための注型装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention does not fix a semiconductor substrate such as a diode, a reverse blocking three-terminal thyristor (SCR), a gate turn-off thyristor (GTO) and a reverse conduction type gate turn-off thyristor (RC-GTO) to a substrate. The present invention relates to a casting device for casting and forming a protective resin on the outer peripheral portion of a semiconductor substrate of an alloy-free flat semiconductor device in which electrode bodies are brought into pressure contact with both surfaces thereof.
【0002】[0002]
【従来の技術】図4は従来の半導体基体外周部に保護樹
脂を塗布により形成する塗布方法を示した図である。適
宜必要なPN接合構造を施された円板状の半導体基体1
の耐圧など電気的特性の信頼性確保のために必要な半導
体基体外周部21への保護樹脂22の形成は従来塗布方
法で行われていた。ここで、半導体基体1と電極板18
がろう23により固着された構成であるため、電極板1
8にろう付けされた半導体基体1を回転ステージ19に
固定して回転させながら保護樹脂を上方に位置するノズ
ル17又は筆等にて塗布していた。2. Description of the Related Art FIG. 4 is a diagram showing a conventional coating method for forming a protective resin on the outer peripheral portion of a semiconductor substrate. Disc-shaped semiconductor substrate 1 provided with an appropriately required PN junction structure
The formation of the protective resin 22 on the outer peripheral portion 21 of the semiconductor substrate, which is necessary to secure the reliability of the electrical characteristics such as the withstand voltage, has been conventionally performed by the coating method. Here, the semiconductor substrate 1 and the electrode plate 18
Since the structure is fixed by the brazing wax 23, the electrode plate 1
The semiconductor substrate 1 brazed to No. 8 was fixed to the rotary stage 19 and was rotated while applying the protective resin by the nozzle 17 located above or a brush or the like.
【0003】[0003]
【発明が解決しようとする課題】上記のような方法で
は、保護樹脂の塗布は手作業であり、保護樹脂をノズル
17又は筆等で塗布するため塗布を行う際にムラ及び気
泡が含入する場合があった。このムラ及び気泡があると
耐圧などの電気的特性の劣化につながる恐れが極めて高
い。またこの方法は半導体基体1が電極板18とろう付
けにより固着されている場合には可能であるが、半導体
基体1と電極板18をろう付けせずに単に加圧接触のみ
により結合させる組み立て構造の場合には、厚さの薄い
半導体基体単体を回転ステージの上に載せ保護樹脂を塗
布しなければならない。この場合、ムラ,気泡の含入の
他に塗布される保護樹脂が半導体基体と電極板との接触
面へダレて半導体基体を電極板で挟み込み加圧接触する
際に半導体基体の破損を誘発する恐れがある。In the method as described above, the application of the protective resin is a manual work, and since the protective resin is applied by the nozzle 17 or the brush, unevenness and bubbles are included in the application. There were cases. The presence of such unevenness and bubbles is extremely likely to lead to deterioration of electrical characteristics such as pressure resistance. Further, this method is possible when the semiconductor substrate 1 is fixed to the electrode plate 18 by brazing, but an assembly structure in which the semiconductor substrate 1 and the electrode plate 18 are simply joined by pressure contact without brazing. In this case, it is necessary to mount the thin semiconductor substrate alone on the rotary stage and apply the protective resin. In this case, in addition to unevenness and inclusion of air bubbles, the applied protective resin drips to the contact surface between the semiconductor substrate and the electrode plate, and when the semiconductor substrate is sandwiched between the electrode plates and pressure-contacted, the semiconductor substrate is damaged. There is a fear.
【0004】本発明の目的は、このような問題に鑑みろ
う付けをしない、即ちアロイフリー型の平型半導体装置
の電気的特性の信頼性確保、さらに加圧接触されたとき
半導体基体と電極板との位置ずれ、または半導体基体の
破損を招く事がないようにするための保護樹脂注型装置
を提供することにある。In view of the above problems, the object of the present invention is to prevent brazing, that is, to secure the reliability of the electrical characteristics of the alloy-free type flat semiconductor device, and further when the semiconductor substrate and the electrode plate are brought into pressure contact with each other. It is an object of the present invention to provide a protective resin casting device for preventing the positional deviation from the above and the semiconductor substrate from being damaged.
【0005】[0005]
【課題を解決するための手段】上記の課題は、この発明
によれば、円板状の半導体基体の外周部に保護樹脂を形
成するための保護樹脂注型装置が、半導体基体を気密に
保つようにして挟み込む上部ケースと下部ケースを備
え、これら上部,下部両ケースの内側には前記半導体基
体外周部に保護樹脂を形成する位置で互いに対向して環
状の気密のキャビティを形成する上部注型部、下部注型
部をそれぞれ組み込み、前記ケースと注型部にはそれぞ
れケース外側から上記キャビティへ通ずる貫通孔を少な
くとも2つ以上設ける。また、上記上部注型部,下部注
型部がそれぞれが250℃以上の耐熱樹脂で形成するこ
とが有効である。また、上記上部,下部両ケースとケー
スに組み込まれた上記上部,下部注型部との間に、それ
ぞれ第1のOリングを少なくとも1つ配置し、かつ上部
ケースに配置した第1のOリングと下部ケースに配置し
た第1のOリングとが注型部を介して互いに対向するよ
うに配置することも有効であり、また、前記注型部に形
成されたキャビティより外側で下部注型部と上部注型部
との接触面に第2のOリングを配置することも有効であ
る。According to the present invention, a protective resin casting apparatus for forming a protective resin on the outer peripheral portion of a disk-shaped semiconductor substrate keeps the semiconductor substrate airtight according to the present invention. An upper case and a lower case that are sandwiched in this way are provided, and an upper casting mold that forms an annular airtight cavity inside each of the upper and lower cases so as to face each other at a position where a protective resin is formed on the outer peripheral portion of the semiconductor substrate. Part and lower casting part are respectively incorporated, and at least two or more through holes communicating from the outside of the case to the cavity are provided in the case and the casting part, respectively. Further, it is effective that each of the upper casting part and the lower casting part is made of a heat-resistant resin having a temperature of 250 ° C. or higher. Further, at least one first O-ring is arranged between each of the upper and lower cases and the upper and lower casting parts incorporated in the case, and the first O-ring arranged in the upper case. It is also effective to arrange the first O-ring and the first O-ring arranged in the lower case so as to face each other through the casting part, and the lower casting part is located outside the cavity formed in the casting part. It is also effective to dispose a second O-ring on the contact surface between the mold and the upper casting part.
【0006】[0006]
【作用】上述のような装置では、上部ケースと下部ケー
スにより半導体基体外周部がキャビティにより気密に保
たれるため保護樹脂を注入した際に電極板との接触部分
へ樹脂がダレ込むことを防ぐことができる。また貫通孔
を2つ以上もうけることにより保護樹脂を注入する場所
以外にキャビティ内の空気が抜けていく場所を確保でき
る。半導体基体は機種(例えばGTOとダイオード)に
より厚さが異なる場合があり、また同じ機種であっても
厚さのバラツキが生じることはさけられない。このこと
から半導体基体が保護樹脂注型装置の設計寸法より薄く
ても上記上部,下部両ケースとケースに組み込まれた上
部,下部注型部との間に、それぞれ第1のOリングを少
なくとも1つ配置し、かつ上部ケースに配置した第1の
Oリングと下部ケースに配置した第1のOリングとが注
型部を介して互いに対向するように配置することにより
半導体基体と注型部が接触する部分に第1のOリングに
より圧力が与えられるため、確実にキャビティの気密を
保持することができる。さらに、半導体基体の厚さが設
計寸法よりも厚い場合、キャビティ外側の上部,下部両
注型部の接触部に隙間が生じるが下部注型部のキャビテ
ィ外側に第2のOリングを配置することにより第2のO
リングがこの隙間を塞ぎ気密を保持することができる。
また耐熱性樹脂の耐熱温度が250℃以上のものを用い
ることにより保護樹脂を硬化する際の保護樹脂の硬化温
度は通常150ないし250℃と高温に加熱するが、こ
の温度により耐熱性樹脂が劣化することはない。In the above-mentioned device, the outer case of the semiconductor substrate is kept airtight by the cavity by the upper case and the lower case, so that when the protective resin is injected, the resin is prevented from dripping into the contact portion with the electrode plate. be able to. In addition, by providing two or more through holes, it is possible to secure a place where air in the cavity escapes in addition to the place where the protective resin is injected. The thickness of the semiconductor substrate may differ depending on the model (for example, GTO and diode), and even if the semiconductor model is the same, variation in thickness is unavoidable. Therefore, even if the semiconductor substrate is thinner than the design dimension of the protective resin casting device, at least one first O-ring is provided between the upper and lower cases and the upper and lower casting parts incorporated in the case. And the first O-ring arranged in the upper case and the first O-ring arranged in the lower case are arranged so as to face each other with the casting section interposed therebetween. Since pressure is applied to the contacting portion by the first O-ring, the airtightness of the cavity can be reliably maintained. Further, when the thickness of the semiconductor substrate is thicker than the designed size, a gap is created in the contact portion between the upper and lower casting parts outside the cavity, but the second O-ring should be placed outside the cavity in the lower casting part. By the second O
A ring can close this gap and maintain airtightness.
Further, when the heat resistant resin having a heat resistant temperature of 250 ° C. or higher is used, the hardening temperature of the protective resin when the protective resin is hardened is usually 150 to 250 ° C., but this temperature deteriorates the heat resistant resin. There is nothing to do.
【0007】[0007]
【実施例】図1は半導体基体外周部へ保護樹脂を注型す
る装置の一実施例の断面図を示す。耐熱性樹脂からなる
上部注型部2及び耐熱性樹脂からなる下部注型部3は、
それぞれ上部ケース4と下部ケース5に組み込まれ、上
部注型部2及び下部注型部3は半導体基体1を挟み込ん
だ時に半導体基体1と共に気密のキャビティ6を形成し
ている。このように耐熱性樹脂により半導体基体外周部
に気密のキャビティ6を形成することにより保護樹脂注
入時に保護樹脂がキャビティ外にダレることなく半導体
基体外周部21に保護樹脂を形成することができる。ま
た予め上部ケース4及びそれに組み込まれた上部注型部
2に前記キャビティ6へ通ずる2つの貫通孔7,8を設
けてある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a sectional view of an embodiment of an apparatus for casting a protective resin on the outer periphery of a semiconductor substrate. The upper casting part 2 made of heat resistant resin and the lower casting part 3 made of heat resistant resin are
The upper casting part 2 and the lower casting part 3 are respectively assembled, and the upper casting part 2 and the lower casting part 3 form an airtight cavity 6 together with the semiconductor substrate 1 when the semiconductor substrate 1 is sandwiched. By forming the airtight cavity 6 in the outer peripheral portion of the semiconductor substrate with the heat-resistant resin in this manner, the protective resin can be formed in the outer peripheral portion 21 of the semiconductor substrate without the protective resin dripping outside the cavity when the protective resin is injected. Further, the upper case 4 and the upper casting portion 2 incorporated therein are provided with two through holes 7 and 8 communicating with the cavity 6 in advance.
【0008】ここで、耐熱性樹脂としては、例えばフッ
素系樹脂を用いる。またフッ素系樹脂は剥離性も優れて
いるため保護樹脂を注型して硬化した後注型装置より容
易に取り出すことができる。また上部,下部ケースに
は、例えばAlやステンレスを用いることができる。図
2は図1の実施例にさらにOリングを設置したもので、
図1と同じ部分には同一の符号を付す。上部ケース4と
上部注型部2の間及び下部ケース5と下部注型部3の間
にそれぞれ第1のOリング10を配置する環状の溝部を
設け、第1のOリング10を配置する。さらに、下部注
型部3の外周に第1のOリング9を配置する環状の溝部
を設け第1のOリング9を配置したものである。上記図
1に示したOリングを配置しない場合の保護樹脂注型装
置においては、半導体基体の厚さのバラツキにより厚さ
が薄い半導体基体の外周部に保護樹脂を注型する場合に
半導体基体外周部と注型部との接触部24が接触せずキ
ャビティ6の気密を確保できない場合があるが、第1の
Oリング10を配置すると、半導体基体1の厚さが薄い
場合においても、第1のOリング10が耐熱性樹脂2,
3と半導体基体1との接触を保持する。また、第2のO
リング9は半導体基体1の厚さが厚い場合キャビティの
外側の上部,下部両注型部の接触部25に隙間が生じる
ことを防ぐ。そこで第2のOリング9は保護樹脂に直接
接触する場合があるため半導体基体1を装置から取り出
すときの剥離性を考え、例えばフッ素系樹脂をコーティ
ングする。またキャビティの気密の保持と、保護樹脂硬
化時の温度により劣化しないようにOリング9,10に
は耐熱ゴムを用いた。Here, as the heat resistant resin, for example, a fluorine resin is used. Further, since the fluorine-based resin has excellent releasability, it can be easily taken out from the casting device after the protective resin is cast and cured. For the upper and lower cases, for example, Al or stainless steel can be used. FIG. 2 shows the embodiment of FIG. 1 in which an O-ring is further installed.
The same parts as those in FIG. 1 are designated by the same reference numerals. An annular groove for arranging the first O-ring 10 is provided between the upper case 4 and the upper casting part 2 and between the lower case 5 and the lower casting part 3, respectively, and the first O-ring 10 is arranged. Furthermore, an annular groove for arranging the first O-ring 9 is provided on the outer periphery of the lower casting part 3 and the first O-ring 9 is arranged. In the protective resin casting apparatus shown in FIG. 1 in which the O-ring is not arranged, when the protective resin is cast on the outer peripheral portion of the thin semiconductor substrate due to the variation in the thickness of the semiconductor substrate, the outer periphery of the semiconductor substrate There is a case where the contact portion 24 between the casting portion and the casting portion does not come into contact with each other and the airtightness of the cavity 6 cannot be ensured. However, when the first O-ring 10 is arranged, even if the thickness of the semiconductor substrate 1 is small, the first The O-ring 10 is made of heat-resistant resin 2,
The contact between 3 and the semiconductor substrate 1 is maintained. Also, the second O
The ring 9 prevents the formation of a gap between the contact portions 25 of the upper and lower casting parts outside the cavity when the semiconductor substrate 1 is thick. Therefore, since the second O-ring 9 may come into direct contact with the protective resin, the second O-ring 9 is coated with, for example, a fluorine-based resin in consideration of the peelability when the semiconductor substrate 1 is taken out from the device. Further, heat-resistant rubber is used for the O-rings 9 and 10 so that the air-tightness of the cavity is maintained and that it does not deteriorate due to the temperature when the protective resin is cured.
【0009】図3は図1,図2に示した保護樹脂注型装
置による注型方法を示した構成図であり、装置13は図
1または図2の保護樹脂注型装置から成るものである。
保護樹脂注型の方法は、バルブ12を閉めてバルブ14
を開き真空ポンプ16を作動させ保護樹脂注型装置の保
護樹脂を注型するキャビティ6の空気を取り除く。真空
ポンプ16を作動させたまま、バルブ12を開き保護樹
脂をキャビティ6内に注入する。保護樹脂がタンク15
まで出て来たら真空ポンプ16を停止する。次にバルブ
12,14を閉めて保護樹脂の注型が終了する。この後
保護樹脂注型装置13を外し保護樹脂硬化工程に移動さ
せる。保護樹脂を注型するキャビティ6の気密を十分に
保持できているので、キャビティ6を真空状態にしてか
ら保護樹脂を注型することにより、ムラ及び気泡の含入
を防止して耐圧劣化を防ぐことができる。FIG. 3 is a block diagram showing a casting method using the protective resin casting apparatus shown in FIGS. 1 and 2, and the apparatus 13 is the protective resin casting apparatus shown in FIG. 1 or 2. .
The method of casting protective resin is to close the valve 12 and close the valve 14.
Is opened and the vacuum pump 16 is operated to remove the air in the cavity 6 for casting the protective resin of the protective resin casting device. With the vacuum pump 16 still operating, the valve 12 is opened to inject the protective resin into the cavity 6. Protective resin is tank 15
When it comes out, the vacuum pump 16 is stopped. Next, the valves 12 and 14 are closed to complete the casting of the protective resin. After this, the protective resin casting device 13 is removed and moved to the protective resin curing step. Since the airtightness of the cavity 6 into which the protective resin is cast can be sufficiently maintained, the protective resin is cast after the cavity 6 is evacuated to prevent unevenness and inclusion of air bubbles and prevent deterioration of pressure resistance. be able to.
【0010】[0010]
【発明の効果】この発明によれば、半導体基体と電極板
がろう付けにより固着されていない構造を有するアロイ
フリー型の平型半導体装置の半導体基体の保護または半
導体基体と電極板の位置決めを目的とする保護樹脂注型
装置を、半導体基体を挟み込むための上部,下部ケース
からなり、上部,下部両ケースの半導体基体外周部にあ
たる部分に対向して、半導体基体を挟み込み、半導体基
体外周部に半導体基体と共に環状のキャビティを形成す
る、耐熱性樹脂からなる上部注型部,下部注型部を組み
込み、上部ケースに貫通孔を設けたことにより、注型時
の気密が図れ、またムラ、気泡の含入及びダレの発生を
防止でき、これにより耐圧などの電気的特性の劣化の防
止、半導体基体を電極板により挟み込んだ際の破損の防
止を図ることができる。According to the present invention, the object of the present invention is to protect the semiconductor substrate or to position the semiconductor substrate and the electrode plate in an alloy-free type flat semiconductor device having a structure in which the semiconductor substrate and the electrode plate are not fixed by brazing. The protective resin casting device is composed of an upper case and a lower case for sandwiching the semiconductor substrate, and the semiconductor substrate is sandwiched between the upper and lower cases facing the portions corresponding to the outer periphery of the semiconductor substrate, and the semiconductor is formed on the outer periphery of the semiconductor substrate. By incorporating an upper casting part and a lower casting part made of heat-resistant resin that form an annular cavity with the base body and providing through holes in the upper case, it is possible to achieve airtightness during casting and to prevent unevenness and bubbles. It is possible to prevent inclusion and sagging, thereby preventing deterioration of electrical characteristics such as withstand voltage and preventing damage when the semiconductor substrate is sandwiched by electrode plates. That.
【図1】本発明の一実施例の保護樹脂注型装置の断面図FIG. 1 is a sectional view of a protective resin casting device according to an embodiment of the present invention.
【図2】本発明の別の実施例の保護樹脂注型装置の断面
図FIG. 2 is a sectional view of a protective resin casting device according to another embodiment of the present invention.
【図3】本発明の保護樹脂注型方法の実施例を示した構
成図FIG. 3 is a configuration diagram showing an embodiment of a protective resin casting method of the present invention.
【図4】従来の方法による保護樹脂の塗布方法を示した
図FIG. 4 is a diagram showing a method of applying a protective resin by a conventional method.
1 半導体基体 2 上部注型部 3 下部注型部 4 上部ケース 5 下部ケース 6 キャビティ 9 外周Oリング 10 Oリング 18 電極板 22 保護樹脂 1 Semiconductor Base 2 Upper Casting Part 3 Lower Casting Part 4 Upper Case 5 Lower Case 6 Cavity 9 Outer O-ring 10 O-ring 18 Electrode Plate 22 Protective Resin
Claims (4)
成するための保護樹脂注型装置であって、半導体基体を
気密に保つようにして挟み込むための上部ケースと下部
ケースを備え、これら上部,下部両ケースの内側には前
記半導体基体外周部に保護樹脂を形成する位置で互いに
対向して気密のキャビティを形成する上部注型部,下部
注型部をそれぞれ組み込み、前記ケースと注型部にはそ
れぞれケース外側から上記キャビティへ通ずる貫通孔を
少なくとも2つ以上設けたことを特徴とする保護樹脂注
型装置。1. A protective resin casting apparatus for forming a protective resin on the outer peripheral portion of a disk-shaped semiconductor substrate, comprising an upper case and a lower case for sandwiching the semiconductor substrate while keeping it airtight. Inside the upper and lower cases, an upper casting part and a lower casting part, which face each other at positions where a protective resin is to be formed on the outer peripheral portion of the semiconductor substrate and form an airtight cavity, are incorporated respectively. A protective resin casting device, characterized in that at least two through-holes are provided in each of the mold parts from the outside of the case to the cavity.
度が250℃以上の耐熱性樹脂で形成されることを特徴
とする請求項1記載の保護樹脂注型装置。2. The protective resin casting apparatus according to claim 1, wherein the upper casting portion and the lower casting portion are each formed of a heat resistant resin having a heat resistant temperature of 250 ° C. or higher.
込まれた上部,下部注型部との間に、それぞれ第1のO
リングを少なくとも1つ配置し、かつ上部ケースに配置
した第1のOリングと下部ケースに配置した第1のOリ
ングとが注型部を介して互いに対向するように配置する
ことを特徴とする請求項1または2記載の保護樹脂注型
装置。3. A first O 2 is provided between the upper and lower cases and the upper and lower casting parts incorporated in these cases, respectively.
At least one ring is arranged, and the first O-ring arranged in the upper case and the first O-ring arranged in the lower case are arranged so as to face each other via the casting part. The protective resin casting device according to claim 1 or 2.
注型部との接触面に第2のOリングを配置することを特
徴とする請求項1ないし3記載の保護樹脂注型装置。4. The protective resin casting device according to claim 1, wherein a second O-ring is arranged on the contact surface between the lower casting portion and the upper casting portion outside the cavity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4625894A JPH07263475A (en) | 1994-03-17 | 1994-03-17 | Protective resin casting mold |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4625894A JPH07263475A (en) | 1994-03-17 | 1994-03-17 | Protective resin casting mold |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07263475A true JPH07263475A (en) | 1995-10-13 |
Family
ID=12742181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4625894A Pending JPH07263475A (en) | 1994-03-17 | 1994-03-17 | Protective resin casting mold |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07263475A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006263638A (en) * | 2005-03-25 | 2006-10-05 | Dainippon Printing Co Ltd | Coater of coating liquid and method of coating |
-
1994
- 1994-03-17 JP JP4625894A patent/JPH07263475A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006263638A (en) * | 2005-03-25 | 2006-10-05 | Dainippon Printing Co Ltd | Coater of coating liquid and method of coating |
JP4588506B2 (en) * | 2005-03-25 | 2010-12-01 | 大日本印刷株式会社 | Coating liquid coating apparatus and coating method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101850438B1 (en) | Method for producing molded gasket | |
JPH0263300B2 (en) | ||
JPH07263475A (en) | Protective resin casting mold | |
TW201838043A (en) | Resin sealing device and resin sealing method | |
JP7281374B2 (en) | Retaining device and method for manufacturing the retaining device | |
JPH09298211A (en) | Pressure-joined semiconductor device and manufacture thereof | |
KR20100090561A (en) | Electrostatic chuck having junction structure between different materals and fabrication method thereof | |
JP2833266B2 (en) | Power semiconductor device and method of manufacturing the same | |
JPH0245334B2 (en) | ||
JPH0485967A (en) | Passivating method for semiconductor device | |
JPH0974110A (en) | Semiconductor device | |
JP3114320B2 (en) | Method for manufacturing semiconductor device | |
JP7409535B1 (en) | Electrostatic chuck and its manufacturing method | |
KR100951613B1 (en) | The Electrostatic Chuck having grooves on the lower side of a ceramic plate and projecting portions on the upper side of a lower electrode | |
US20220084866A1 (en) | Electrostatic chuck and substrate fixing device | |
JPH08107122A (en) | Manufacture of pressure welding type semiconductor element | |
JP2024119739A (en) | Electrostatic chuck and method of manufacturing same | |
KR20010063393A (en) | Perfect plane surface process of film using hot press principles and the device | |
JPH05335357A (en) | Manufacture of flat semiconductor device | |
JPH0328509Y2 (en) | ||
JP2024119227A (en) | Electrostatic chuck and method of manufacturing same | |
CN113436994A (en) | Semiconductor device and method for curing dielectric material in precisely controlled manner | |
JPH0530364Y2 (en) | ||
TW202324546A (en) | Encapsulation process for double-sided cooled packages | |
JPH07130776A (en) | Compression-bonded semiconductor device |