JPH07263338A - Developing device - Google Patents

Developing device

Info

Publication number
JPH07263338A
JPH07263338A JP1140395A JP1140395A JPH07263338A JP H07263338 A JPH07263338 A JP H07263338A JP 1140395 A JP1140395 A JP 1140395A JP 1140395 A JP1140395 A JP 1140395A JP H07263338 A JPH07263338 A JP H07263338A
Authority
JP
Japan
Prior art keywords
substrate
developing solution
processed
developing
supply port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1140395A
Other languages
Japanese (ja)
Other versions
JP2588854B2 (en
Inventor
Keizo Hasebe
圭蔵 長谷部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP7011403A priority Critical patent/JP2588854B2/en
Publication of JPH07263338A publication Critical patent/JPH07263338A/en
Application granted granted Critical
Publication of JP2588854B2 publication Critical patent/JP2588854B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide a developing device which can efficiently perform developing treatment with a less amount of developing solution and can uniformly develop the surface of a substrate to be treated even when the substrate has a large size. CONSTITUTION:An annular member 5a which forms an annular dam surrounding a substrate 3 to be treated is provided in a treatment chamber 2. The member 5a has a plurality of developing solution supplying ports 5b which are arranged to surround a susceptor 4 and form developing solution flows toward the substrate 3 almost in parallel with the substrate 3. On the member 5a, facing sections 5c which are faced to the ports 5b at intervals are formed and a ring- like member 5d which directs the developing solution flows downward is mounted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハ等の被処
理基板の現像処理を行なう現像装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device for developing a substrate to be processed such as a semiconductor wafer.

【0002】[0002]

【従来の技術】一般に、半導体ウエハ等の被処理基板の
現像処理を行なう現像装置では、表面にフォトレジスト
等の感光性膜が形成された被処理基板が配置される処理
室と、この処理室内から排気する手段と、被処理基板と
現像液とを所定の現像時間の間接触させ、感光性膜に所
定の化学変化を生じさせて現像を行なう手段とを備えて
いる。
2. Description of the Related Art Generally, in a developing apparatus for developing a substrate to be processed such as a semiconductor wafer, a processing chamber in which a substrate to be processed having a photosensitive film such as a photoresist is formed, And means for bringing the substrate to be processed into contact with the developing solution for a predetermined development time to cause a predetermined chemical change in the photosensitive film to perform development.

【0003】そして、処理室内に配置された載置台上に
半導体ウエハ等の被処理基板を配置して、現像液、純水
等のリンス液を順次スプレ―ノズル等から被処理基板に
供給して、現像を行なう。
Then, a substrate to be processed such as a semiconductor wafer is arranged on a mounting table arranged in the processing chamber, and a rinse liquid such as a developing solution and pure water is sequentially supplied to the substrate to be processed from a spray nozzle or the like. , Develop.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述の
従来の現像装置では、多量の現像液を必要とするため、
現像コストが高くなるという問題がある。
However, since the above-mentioned conventional developing device requires a large amount of developing solution,
There is a problem that the development cost becomes high.

【0005】本発明者等は、このような問題を解決する
ため、被処理基板を現像液中に浸漬するようにして現像
を行なうディップ型の現像装置の開発を行なってきた。
そしてディップ型の現像装置では、例えば現像時間短縮
のための現像液の改良による現像の高速化、被処理基板
の大型化等を行なう場合、被処理基板面内で、現像状態
が不均一となり、例えば精密写真技術を用いて、半導体
ウエハ上に微細パタ―ンを形成する場合等では、半導体
ウエハ面に形成される線幅等が不均一になるという問題
が発生することが判明した。
In order to solve such a problem, the inventors of the present invention have developed a dip-type developing device for developing by immersing a substrate to be processed in a developing solution.
In the dip type developing device, for example, when the development speed is improved by improving the developing solution for shortening the development time, the size of the substrate to be processed is increased, the developing state becomes uneven in the surface of the substrate to be processed, For example, when a fine pattern is formed on a semiconductor wafer by using a precision photographic technique, it has been found that there arises a problem that the line width formed on the surface of the semiconductor wafer becomes nonuniform.

【0006】本発明は、上記問題に対処してなされたも
ので、少量の現像液で現像処理を行なうことができ、現
像コストの低減および効率の向上を図ることができ、か
つ、例えば高速な現像液を用いて、大型の被処理基板の
現像を行なう場合でも面内の現像状態が均一となるよう
に現像処理を行なうことができ、半導体ウエハ面に形成
される線幅等を均一化することのできる現像方法を提供
しようとするものである。
The present invention has been made to solve the above-mentioned problems, and it is possible to carry out development processing with a small amount of a developing solution, and it is possible to reduce the development cost and improve the efficiency, and, for example, at a high speed. Even when a large substrate to be processed is developed using a developing solution, the development process can be performed so that the in-plane development state is uniform, and the line width and the like formed on the semiconductor wafer surface are made uniform. The present invention is intended to provide a developing method capable of performing such a development.

【0007】[0007]

【課題を解決するための手段】請求項1記載の発明は、
表面に感光性膜が形成された被処理基板を、前記被処理
基板の周囲を囲む容器内に配置し、前記容器内に現像液
を供給して、前記被処理基板を前記現像液に接触させる
現像装置であって、前記被処理基板の周囲を囲む如く形
成された現像液供給口と、この現像液供給口と前記被処
理基板との間に設けられ、前記現像液供給口から水平方
向に向かう現像液流を下方へ向け、下部に設けられた間
隙から前記被処理基板方向へ供給するリング状部材とを
具備した現像液供給機構により、前記現像液を供給する
ことを特徴とする。
The invention according to claim 1 is
A substrate to be processed having a photosensitive film formed on its surface is placed in a container surrounding the substrate to be processed, and a developing solution is supplied into the container to bring the substrate to be processed into contact with the developing solution. A developing device, a developing solution supply port formed so as to surround the substrate to be processed, provided between the developing solution supply port and the substrate to be processed, and extending horizontally from the developing solution supply port. The developing solution is supplied by a developing solution supply mechanism including a ring-shaped member that supplies a flowing developing solution flow downward and supplies the developing solution flow toward a substrate to be processed from a gap provided in a lower portion.

【0008】また、請求項2記載の発明は、表面に感光
性膜が形成された被処理基板を、前記被処理基板の周囲
を囲む容器内に配置し、前記容器内に現像液を供給し
て、前記被処理基板を前記現像液に接触させる現像装置
であって、前記被処理基板の周囲を囲む如く形成された
現像液供給口と、この現像液供給口と前記被処理基板と
の間に設けられ、前記現像液供給口から水平方向に向か
う現像液流を下方へ向け、下部に設けられた間隙から前
記被処理基板方向へ供給するリング状部材とを具備した
現像液供給機構により、処理室内の排気を停止した状態
で前記現像液を供給することを特徴とする。
According to the second aspect of the invention, the substrate to be processed having a photosensitive film formed on its surface is placed in a container surrounding the substrate to be processed, and a developing solution is supplied into the container. A developing device for bringing the substrate to be processed into contact with the developing solution, the developing solution supply port being formed so as to surround the substrate to be processed, and the developing solution supply port and the substrate to be processed. And a ring-shaped member that supplies a developing solution flow from the developing solution supply port in the horizontal direction downward and supplies the developing solution flow toward the substrate to be processed from a gap provided in the lower part, It is characterized in that the developing solution is supplied in a state where the exhaust of the processing chamber is stopped.

【0009】[0009]

【作用】本発明の現像装置では、被処理基板をその周囲
を囲む容器内に配置し、当該被処理基板の周囲を囲む如
く形成された現像液供給口と、この現像液供給口と被処
理基板との間に設けられ、現像液供給口から水平方向に
向かう現像液流を下方へ向け、下部に設けられた間隙か
ら被処理基板方向へ供給するリング状部材とを具備した
現像液供給機構により、現像液を供給する。
In the developing apparatus of the present invention, the substrate to be processed is placed in the container surrounding the substrate, and the developing solution supply port is formed so as to surround the substrate to be processed. A developing solution supply mechanism provided between the substrate and a ring-shaped member for directing a developing solution flow from the developing solution supply port in the horizontal direction downward and for supplying the developing solution flow toward a substrate to be processed from a gap provided in the lower part. To supply the developing solution.

【0010】したがって、被処理基板の周囲から被処理
基板とほぼ平行に供給される現像液流によって、被処理
基板表面全面に渡って、高速かつ均一に現像液を供給す
ることができ、また現像液に無駄がなく必要な現像液の
量も少量となる。さらに、感光性膜に現像液圧が加わる
ことも防止できる。
Therefore, by the flow of the developing solution supplied from the periphery of the substrate to be processed substantially parallel to the substrate to be processed, it is possible to uniformly and rapidly supply the developing solution over the entire surface of the substrate to be processed. There is no waste of liquid and the amount of developing liquid required is small. Further, it is possible to prevent application of developing solution pressure to the photosensitive film.

【0011】また、請求項2記載の発明では、さらに処
理室内の排気を停止した状態で現像液を供給するので、
気体流による現像液の温度低下及び温度不均一が発生す
ることを防止することができる。
Further, according to the second aspect of the invention, since the developing solution is supplied while the exhaust of the processing chamber is stopped,
It is possible to prevent the temperature of the developer from decreasing due to the gas flow and the occurrence of temperature nonuniformity.

【0012】これによって、少量の現像液で効率よく現
像処理を行なうことができ、現像コストの低減を図るこ
とができ、かつ、例えば高速な現像液を用いて、大型の
被処理基板の現像を行なう場合でも、面内の現像状態が
均一となるように現像処理を行なうことができ、半導体
ウエハ面に形成される線幅等を均一化することができ
る。
As a result, the development processing can be efficiently performed with a small amount of the developing solution, the development cost can be reduced, and the large-sized substrate can be developed by using, for example, a high-speed developing solution. Even when it is performed, the developing process can be performed so that the in-plane developing state becomes uniform, and the line width and the like formed on the surface of the semiconductor wafer can be made uniform.

【0013】[0013]

【実施例】以下本発明の現像装置を図面を参照して実施
例について説明する。
Embodiments of the developing device of the present invention will be described below with reference to the drawings.

【0014】図1は、本発明の一実施例の現像装置1の
構成を示している。この実施例における現像装置1で
は、処理室2内には、半導体ウエハ等の被処理基板3を
吸着保持する真空チャックおよび回転機構4aを備えた
載置台4が配置されている。
FIG. 1 shows the construction of a developing device 1 according to an embodiment of the present invention. In the developing device 1 according to this embodiment, in the processing chamber 2, a mounting table 4 including a vacuum chuck for sucking and holding a substrate 3 to be processed such as a semiconductor wafer and a rotating mechanism 4a is arranged.

【0015】また処理室2内には、図2にも示すよう
に、上下動可能とされ、被処理基板3を真空チャック等
により吸着保持するとともに、被処理基板3の周囲を囲
む環状の堰を形成する環状部材5aが配置されている。
この環状部材5aには載置台4の周囲を囲むように配置
され、被処理基板3方向へ被処理基板3とほぼ平行する
現像液流を形成する複数の現像液供給口5bが配置され
ている。そして、環状部材5a上には、現像液供給口5
bと間隔をもって対向する対向部5cを形成し、現像液
流を下方へ向けるリング状部材5dが載置されており、
現像液供給部が形成されている。
As shown in FIG. 2, the processing chamber 2 is movable up and down, and holds the substrate 3 to be processed by suction by a vacuum chuck or the like, and an annular weir surrounding the substrate 3 to be processed. The annular member 5a forming the is arranged.
The annular member 5a is arranged so as to surround the mounting table 4, and is provided with a plurality of developing solution supply ports 5b for forming a developing solution flow substantially parallel to the substrate 3 to be processed. . The developer supply port 5 is provided on the annular member 5a.
A ring-shaped member 5d that forms a facing portion 5c that faces the space b and that directs the developer flow downward is placed,
A developer supply section is formed.

【0016】そして、載置台4上方には、被処理基板3
に純水等のリンス液を供給するリンスノズル6が配置さ
れている。
The substrate 3 to be processed is located above the mounting table 4.
A rinse nozzle 6 for supplying a rinse liquid such as pure water is arranged in the.

【0017】また、処理室2の下部には、廃液排出用開
口7と、排気装置8に接続された排気用開口9が配置さ
れており、排気装置8と排気用開口9との間には、排気
路の開閉を行なうシャッタ10が介挿されている。
A waste liquid discharge opening 7 and an exhaust opening 9 connected to an exhaust device 8 are arranged in the lower part of the processing chamber 2. Between the exhaust device 8 and the exhaust opening 9. A shutter 10 that opens and closes the exhaust path is inserted.

【0018】上記構成のこの実施例の現像装置では、例
えば図示しないマイクロコンピュ―タ等からなる制御部
によって例えば以下のように制御され、現像処理を行な
う。すなわち、まず、図示しない搬送装置等により被処
理基板3が載置台4上に載置され、載置台4の真空チャ
ックが作動され、被処理基板3が載置台4上に吸着保持
される。
In the developing device of this embodiment having the above-described structure, the developing process is performed under the control of, for example, the following by a control unit including a microcomputer (not shown). That is, first, the substrate 3 to be processed is placed on the mounting table 4 by a transfer device (not shown), the vacuum chuck of the mounting table 4 is operated, and the substrate 3 to be processed is suction-held on the mounting table 4.

【0019】次に、環状部材5aを上昇させ、被処理基
板3を載置台4から環状部材5aに移動させ、現像液供
給口5bから、被処理基板3方向へ被処理基板3とほぼ
平行する現像液流を形成し、対向部5cによってこの現
像液流を下方へ向けて現像液を供給し、環状部材5a内
に現像液を貯留して、あらかじめ設定された例えば30秒
等の所定の現像時間、現像液を被処理基板3に接触させ
て、被処理基板3表面に形成されたフォトレジスト等の
感光性膜の現像を行なう。この現像時間中は、シャッタ
11は閉塞され、処理室2内からの排気は停止されてい
る。このように処理室2内からの排気を停止することに
より、気体流による現像液の温度低下及び温度不均一が
発生することを防止することができる。
Next, the annular member 5a is raised to move the substrate 3 to be processed from the mounting table 4 to the annular member 5a, and from the developing solution supply port 5b, the substrate 3 is substantially parallel to the substrate 3 to be processed. A developing solution flow is formed, the developing solution is directed downward by the facing portion 5c, the developing solution is supplied, the developing solution is stored in the annular member 5a, and a predetermined developing time such as 30 seconds is set. The developing solution is brought into contact with the substrate 3 to be processed for a period of time to develop the photosensitive film such as a photoresist formed on the surface of the substrate 3 to be processed. During this development time, the shutter 11 is closed and the exhaust from the processing chamber 2 is stopped. By stopping the exhaustion from the inside of the processing chamber 2 in this way, it is possible to prevent the temperature of the developing solution from being lowered and the temperature from being nonuniform due to the gas flow.

【0020】この後、環状部材5aを下降させ、被処理
基板3を環状部材5aから載置台4に移動させると共
に、現像液を排出し、回転機構4aによって被処理基板
3を例えば 500rpm 〜2000rpm 程度の第1の回転数で回
転させ、リンスノズル6から純水等のリンス液を被処理
基板3表面に供給する。この時は、シャッタ10は開と
され、10〜20mmH2 O程度の排気量で処理室2からの排
気が行なわれる。
After that, the annular member 5a is lowered to move the substrate 3 to be processed from the annular member 5a to the mounting table 4, the developing solution is discharged, and the substrate 3 to be processed is rotated by, for example, about 500 rpm to 2000 rpm. And the rinse liquid such as pure water is supplied from the rinse nozzle 6 to the surface of the substrate 3 to be processed. At this time, the shutter 10 is opened and the processing chamber 2 is exhausted with an exhaust amount of about 10 to 20 mmH 2 O.

【0021】上記リンス操作が、例えば10秒〜20秒程度
の所定時間行なわれた後、リンスノズル6からのリンス
液の供給を停止して、被処理基板3の回転を例えば3000
rpm〜5000rpm 程度の第2の回転数に上昇させて被処理
基板3表面に付着した液体を遠心力により除去し、被処
理基板3を乾燥させる。この間も、シャッタ11は開と
され、10〜20mmH2 O程度の排気量で処理室2からの排
気が行なわれる。
After the rinsing operation is performed for a predetermined time of, for example, 10 to 20 seconds, the supply of the rinsing liquid from the rinsing nozzle 6 is stopped and the substrate 3 to be processed is rotated, for example, at 3000.
The liquid is adhered to the surface of the substrate 3 to be processed by centrifugal force to increase the second rotation speed of about rpm to 5000 rpm, and the substrate 3 to be processed is dried. During this time, the shutter 11 is also opened, and the processing chamber 2 is exhausted with an exhaust amount of about 10 to 20 mmH 2 O.

【0022】被処理基板3の乾燥が終了すると、回転機
構4aが停止され、図示しない搬送装置によって、被処
理基板3が処理室2内から搬出される。
When the substrate 3 to be processed is dried, the rotation mechanism 4a is stopped and the substrate 3 to be processed is unloaded from the processing chamber 2 by a transfer device (not shown).

【0023】すなわち、この実施例の現像方法では、被
処理基板3を、環状部材5aと被処理基板3とで形成し
た容器内に供給した現像液と接触させて現像した後、載
置台4の回転速度を切替えてリンス液の供給と乾燥とを
行っているため、少量の現像液で効率よく、かつ均一に
現像処理を行なうことができる。
That is, in the developing method of this embodiment, the substrate 3 to be processed is brought into contact with the developing solution supplied into the container formed by the ring-shaped member 5a and the substrate 3 to be processed, and then developed. Since the rotation speed is switched and the rinse liquid is supplied and dried, the developing process can be efficiently and uniformly performed with a small amount of the developer.

【0024】また、現像液供給口5bから被処理基板3
方向へ被処理基板3とほぼ平行する現像液流を形成し、
リング状部材5dの対向部5cによってこの現像液流を
下方へ向けて現像液を供給し、環状部材5a内に現像液
を貯留して、所定の現像時間、現像液を被処理基板3に
接触させて、被処理基板表面に形成されたフォトレジス
ト等の感光性膜の現像を行なう。したがって、被処理基
板表面全面に渡って、高速かつ均一に現像液を供給する
ことができ、被処理基板3面内の現像状態が均一となる
ように現像処理を行なうことができる。また、例えば現
像液をシャワー状に供給する場合等に比べてフォトレジ
スト等に現像液圧が加わることを防止できるので、この
点においても被処理基板3面内の現像状態が均一となる
ように現像処理を行なうことができる。
Further, the substrate 3 to be processed is supplied from the developing solution supply port 5b.
Forming a developing solution flow substantially parallel to the substrate 3 to be processed,
The developing solution is supplied downward by the facing portion 5c of the ring-shaped member 5d, the developing solution is stored in the annular member 5a, and the developing solution is brought into contact with the substrate 3 to be processed for a predetermined developing time. Then, the photosensitive film such as a photoresist formed on the surface of the substrate to be processed is developed. Therefore, the developing solution can be supplied at high speed and uniformly over the entire surface of the substrate to be processed, and the developing process can be performed so that the developing state within the surface of the substrate to be processed 3 becomes uniform. Further, since it is possible to prevent the developing solution pressure from being applied to the photoresist or the like as compared with the case where the developing solution is supplied in the form of a shower, for example, in this respect as well, the developing state within the surface of the target substrate 3 is made uniform. Development processing can be performed.

【0025】[0025]

【発明の効果】上述のように、本発明の現像装置では、
少量の現像液で効率よく現像処理を行なうことができ、
現像コストの低減を図ることができ、かつ、例えば高速
な現像液を用いて、大型の被処理基板の現像を行なう場
合でも面内の現像状態が均一となるように現像処理を行
なうことができ、半導体ウエハ面に形成される線幅等を
均一化することができる。
As described above, in the developing device of the present invention,
Can develop efficiently with a small amount of developer,
The development cost can be reduced, and even if a large-sized substrate is developed using a high-speed developing solution, the development can be performed so that the in-plane development state is uniform. The line width and the like formed on the semiconductor wafer surface can be made uniform.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の現像装置の構成を示す図。FIG. 1 is a diagram showing a configuration of a developing device according to an embodiment of the present invention.

【図2】図1に示す現像装置の要部を拡大して示す縦断
面図。
FIG. 2 is an enlarged vertical cross-sectional view showing a main part of the developing device shown in FIG.

【符号の説明】[Explanation of symbols]

1……現像装置、3……被処理基板、5a……環状部
材、5b……現像液供給口、5c……対向部、5d……
リング状部材。
1 ... Developing device, 3 ... Substrate to be processed, 5a ... Annular member, 5b ... Developer supply port, 5c.
Ring-shaped member.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 表面に感光性膜が形成された被処理基板
を、前記被処理基板の周囲を囲む容器内に配置し、前記
容器内に現像液を供給して、前記被処理基板を前記現像
液に接触させる現像装置であって、 前記被処理基板の周囲を囲む如く形成された現像液供給
口と、この現像液供給口と前記被処理基板との間に設け
られ、前記現像液供給口から水平方向に向かう現像液流
を下方へ向け、下部に設けられた間隙から前記被処理基
板方向へ供給するリング状部材とを具備した現像液供給
機構により、前記現像液を供給することを特徴とする現
像装置。
1. A substrate to be processed having a photosensitive film formed on a surface thereof is placed in a container surrounding the substrate to be processed, and a developing solution is supplied into the container to move the substrate to be processed. A developing device which is brought into contact with a developing solution, the developing solution supply port formed so as to surround the substrate to be processed, and the developing solution supply port provided between the developing solution supply port and the substrate to be processed. The developing solution is supplied by a developing solution supply mechanism that includes a ring-shaped member that directs a developing solution flow from the mouth in the horizontal direction downward and supplies the developing solution toward the substrate to be processed from a gap provided in the lower part. Characteristic developing device.
【請求項2】 表面に感光性膜が形成された被処理基板
を、前記被処理基板の周囲を囲む容器内に配置し、前記
容器内に現像液を供給して、前記被処理基板を前記現像
液に接触させる現像装置であって、 前記被処理基板の周囲を囲む如く形成された現像液供給
口と、この現像液供給口と前記被処理基板との間に設け
られ、前記現像液供給口から水平方向に向かう現像液流
を下方へ向け、下部に設けられた間隙から前記被処理基
板方向へ供給するリング状部材とを具備した現像液供給
機構により、処理室内の排気を停止した状態で前記現像
液を供給することを特徴とする現像装置。
2. A substrate to be processed having a photosensitive film formed on its surface is placed in a container surrounding the substrate to be processed, and a developing solution is supplied into the container to move the substrate to be processed. A developing device which is brought into contact with a developing solution, the developing solution supply port formed so as to surround the substrate to be processed, and the developing solution supply port provided between the developing solution supply port and the substrate to be processed. A state in which the exhaust of the processing chamber is stopped by a developing solution supply mechanism that has a ring-shaped member that directs the developing solution flow from the mouth in the horizontal direction downward and supplies it toward the substrate to be processed from a gap provided in the lower part. A developing device, wherein the developing solution is supplied by the developing device.
JP7011403A 1995-01-27 1995-01-27 Developing device Expired - Fee Related JP2588854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7011403A JP2588854B2 (en) 1995-01-27 1995-01-27 Developing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7011403A JP2588854B2 (en) 1995-01-27 1995-01-27 Developing device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP61311167A Division JPH0611024B2 (en) 1986-12-29 1986-12-29 Development method

Publications (2)

Publication Number Publication Date
JPH07263338A true JPH07263338A (en) 1995-10-13
JP2588854B2 JP2588854B2 (en) 1997-03-12

Family

ID=11777061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7011403A Expired - Fee Related JP2588854B2 (en) 1995-01-27 1995-01-27 Developing device

Country Status (1)

Country Link
JP (1) JP2588854B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020004869A (en) * 2018-06-28 2020-01-09 東京エレクトロン株式会社 Substrate liquid processing method, storage medium, and substrate liquid processing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666044A (en) * 1979-11-05 1981-06-04 Toshiba Corp Semiconductor device
JPS5745232A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Device and method for developing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666044A (en) * 1979-11-05 1981-06-04 Toshiba Corp Semiconductor device
JPS5745232A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Device and method for developing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020004869A (en) * 2018-06-28 2020-01-09 東京エレクトロン株式会社 Substrate liquid processing method, storage medium, and substrate liquid processing apparatus

Also Published As

Publication number Publication date
JP2588854B2 (en) 1997-03-12

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