JPH07235752A - Method for removing chlolrine ion from etching solution and wiring board producing methods using this solution - Google Patents

Method for removing chlolrine ion from etching solution and wiring board producing methods using this solution

Info

Publication number
JPH07235752A
JPH07235752A JP2661194A JP2661194A JPH07235752A JP H07235752 A JPH07235752 A JP H07235752A JP 2661194 A JP2661194 A JP 2661194A JP 2661194 A JP2661194 A JP 2661194A JP H07235752 A JPH07235752 A JP H07235752A
Authority
JP
Japan
Prior art keywords
copper
etching
nickel
chlorine ions
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2661194A
Other languages
Japanese (ja)
Other versions
JP3711565B2 (en
Inventor
Naoyuki Urasaki
直之 浦崎
Koji Nishimura
厚司 西村
Akishi Nakaso
昭士 中祖
Nobuyuki Minami
宣行 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP02661194A priority Critical patent/JP3711565B2/en
Publication of JPH07235752A publication Critical patent/JPH07235752A/en
Application granted granted Critical
Publication of JP3711565B2 publication Critical patent/JP3711565B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PURPOSE:To provide a method for removing chlorine ions from an etching solution of nickel or nickel alloy by a simple method and a wiring board producing method using an etching solution from which chlorine ions wire removed by using the chlorine ion removing method. CONSTITUTION:Copper is contacted to an etching solution of nickel and/or nickel alloy containing an organic acid containing carboxyl group as an additive agent and containing a heterocyclic compound including nitrogen atoms in the form of -NH- or =N- as ring members in an acidic solution having nitric acid and hydrogen peroxide as principal component. And wiring boards are produced by using this method.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ニッケル又はニッケル
合金をエッチングする液中の塩素イオンの除去方法及び
そのエッチング液の使用方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing chloride ions in a solution for etching nickel or a nickel alloy and a method for using the etching solution.

【0002】[0002]

【従来の技術】プリント配線板は、電子機器の発達に伴
い配線密度の高いものが要求され、配線の微細化が一つ
の大きな技術的課題となっている。このようなプリント
配線板の製造法としては、銅箔を絶縁基材に貼り合わせ
た銅張り積層板を出発材料とし、その銅箔の回路導体と
ならない箇所をエッチング除去して回路を形成するサブ
トラクティブ法、絶縁基材の表面に、必要な回路形状に
無電解めっきを行って回路形成するアディティブ法、ス
ルーホール内壁等の回路導体の一部を無電解めっきによ
って形成する部分アディティブ法等が一般的に知られて
いる。
2. Description of the Related Art Printed wiring boards are required to have high wiring density with the development of electronic equipment, and miniaturization of wiring is one of the major technical problems. As a method for manufacturing such a printed wiring board, a copper-clad laminate obtained by bonding a copper foil to an insulating base material is used as a starting material, and a portion of the copper foil that does not become a circuit conductor is removed by etching to form a circuit. In general, the active method, the additive method of forming a circuit by electroless plating to the required circuit shape on the surface of the insulating base material, the partial additive method of forming a part of the circuit conductor such as the inner wall of the through hole by electroless plating, etc. Known to be.

【0003】中でも、サブトラクティブ法は古くから行
われており、配線密度の向上には、通常、銅張り積層板
の銅箔の厚さを薄くすることが行われている。この理由
は、銅箔の表面に必要とする回路形状にエッチングレジ
ストを形成し、エッチング溶液でエッチングレジストか
ら露出した不要な回路部分の側面から銅が腐食されるい
わゆるサイドエッチと呼ばれる現象が起こり、銅箔が厚
いほど、サイドエッチによって除去される側面の銅が多
くなるので、微細な回路を形成することが困難となるか
らである。
Above all, the subtractive method has been used for a long time, and in order to improve the wiring density, it is usually performed to reduce the thickness of the copper foil of the copper-clad laminate. The reason for this is to form an etching resist in the required circuit shape on the surface of the copper foil, and a phenomenon called so-called side etching in which copper is corroded from the side surface of the unnecessary circuit portion exposed from the etching resist with the etching solution, This is because the thicker the copper foil is, the more copper is removed from the side surface by the side etching, which makes it difficult to form a fine circuit.

【0004】このサブトラクト法のエッチングレジスト
に、はんだを用いるはんだ剥離法がある。はんだは配線
形成後除去されるが、その剥離液として特開昭58−5
8280号公報に、鉄イオンとヒドロキシカルボン酸を
主成分とする硝酸と過酸化水素の混合物が開示されてい
る。また、抵抗体付き回路基板用銅箔として銅箔にニッ
ケル又はニッケル−リン合金が銅箔にめっきされたもの
が、USP3,808,576号公報に開示されてい
る。
As the etching resist of the subtract method, there is a solder stripping method using solder. The solder is removed after the wiring is formed.
Japanese Patent No. 8280 discloses a mixture of nitric acid and hydrogen peroxide containing iron ions and hydroxycarboxylic acid as main components. Further, as a copper foil for a circuit board with a resistor, a copper foil having nickel or a nickel-phosphorus alloy plated on the copper foil is disclosed in US Pat. No. 3,808,576.

【0005】さらに、第1の銅層1と、銅を腐食する溶
液に対して耐食性の高い金属からなる中間層2と、第2
の銅層3からなり、前記中間層2が前記第1の銅層1と
前記第2の銅層3に挟まれている3層構造のプリント配
線板用銅箔も、特開昭58−108785号公報により
知られている。この中間層2には、ニッケルおよびニッ
ケル−鉄、ニッケル−スズ合金が使用され、その剥離法
には、硫酸とm−ニトロベンゼンスルホン酸とを含む酸
性水溶液に浸漬し電解剥離を行う方法が、同公報により
知られている。3層構造の複合金属箔をプリント配線板
に用いる場合、第2の銅層に絶縁基材を接合し、第1の
銅層を選択的に除去し、さらに中間層2を除去して銅張
り積層板として使用するのであるが、このときの中間層
2に使用されるニッケル、ニッケル−鉄、ニッケル−ス
ズを除去するには、公報に開示された硫酸とm−ニトロ
ベンゼンスルホン酸を含む酸性水溶液に浸漬し、電解剥
離を行わなければならず面倒である。
Further, a first copper layer 1, an intermediate layer 2 made of a metal having a high corrosion resistance to a solution that corrodes copper, and a second copper layer
Also a copper foil for a printed wiring board having a three-layer structure in which the intermediate layer 2 is sandwiched between the first copper layer 1 and the second copper layer 3 of JP-A-58-108785. It is known from the publication. Nickel, nickel-iron, and nickel-tin alloy are used for the intermediate layer 2, and the stripping method is the same as the method of electrolytic stripping by dipping in an acidic aqueous solution containing sulfuric acid and m-nitrobenzenesulfonic acid. Known from the gazette. When a composite metal foil having a three-layer structure is used for a printed wiring board, an insulating base material is joined to the second copper layer, the first copper layer is selectively removed, and the intermediate layer 2 is further removed to form a copper-clad film. Although it is used as a laminated plate, in order to remove nickel, nickel-iron, and nickel-tin used in the intermediate layer 2 at this time, an acidic aqueous solution containing sulfuric acid and m-nitrobenzenesulfonic acid disclosed in the publication is used. It must be soaked in and electrolytically peeled off, which is troublesome.

【0006】さらに、市販のニッケル又はニッケル合金
のエッチング液としては、アルカリ性のエンストリップ
NP(メルテックス社製、商品名)やメテックSCB
(マクダーミッド社製、商品名)、トップリップAZ
(奥野製薬社製、商品名)等の溶液に浸漬し剥離する方
法や、酸性のメルストリップN−950(メルテックス
社製、商品名)、メルストリップHN−841(メルテ
ックス社製、商品名)等の溶液に浸漬し剥離する方法が
知られている。
Further, commercially available etching solutions for nickel or nickel alloys include alkaline Enstrip NP (trade name, manufactured by Meltex) and Metec SCB.
(McDermid, product name), Top Lip AZ
(Okuno Pharmaceutical Co., Ltd., product name) and the like, and a method of peeling by immersing in a solution, acidic Melstrip N-950 (Meltex company, product name), Melstrip HN-841 (Meltex company, product name) ) Etc. are known and the method of peeling is known.

【0007】しかし、化学的に除去する液エンストリッ
プNP(メルテックス社製、商品名)を使用した場合に
は、中間層の未溶解残査であるスマットと呼ばれる変質
層が生成し、このスマットを除去するのが困難である。
メテックSCB(マクダーミッド社製、商品名)を使用
すると、基質の銅層まで溶解してしまう場合があり、銅
層を完全に残そうとするとニッケル合金の一部が残る。
前者の場合には銅層が不連続になり、後者の場合には接
着性が低下する。さらに、トップリップAZ(奥野製薬
社製、商品名)を使用した場合には、溶解速度が非常に
遅く実用的ではなかった。メルストリップN−950
(メルテックス社製、商品名)やメルストリップHN−
841(メルテックス社製、商品名)を使用した場合に
は、ニッケル−リン合金を剥離する時に黒色の皮膜が生
じ銅が過剰にエッチングされるという欠点があった。
However, when the liquid Enstrip NP (manufactured by Meltex, trade name) which is chemically removed is used, an altered layer called smut, which is an undissolved residue of the intermediate layer, is formed, and this smut Is difficult to remove.
When Metec SCB (trade name, manufactured by McDermid, Inc.) is used, the copper layer of the substrate may be dissolved, and if the copper layer is to be left completely, part of the nickel alloy remains.
In the former case, the copper layer becomes discontinuous, and in the latter case, the adhesiveness deteriorates. Furthermore, when Top Lip AZ (trade name, manufactured by Okuno Seiyaku Co., Ltd.) was used, the dissolution rate was very slow and not practical. Melstrip N-950
(Meltex, product name) and Melstrip HN-
When 841 (trade name, manufactured by Meltex Co.) was used, there was a drawback that a black film was formed when the nickel-phosphorus alloy was peeled off and copper was excessively etched.

【0008】このような課題を解決するものとして、本
発明者らは、硝酸と過酸化水素を主成分とする酸性溶液
に、添加剤としてカルボキシル基を含む有機酸と、環構
成員として−NH−又は=N−の形で窒素原子を含有し
ている複素環式化合物とを含むエッチング液を開発し
た。
In order to solve such a problem, the present inventors have added an acidic solution containing nitric acid and hydrogen peroxide as main components to an organic acid containing a carboxyl group as an additive and -NH as a ring member. An etching solution containing a heterocyclic compound containing a nitrogen atom in the form of-or = N- has been developed.

【0009】[0009]

【発明が解決しようとする課題】ところで、このエッチ
ング液は、ニッケル又はニッケル合金のエッチング性が
低下し、ニッケル又はニッケル合金残りが発生するとい
う新たな課題を発生した。本発明者らが鋭意検討した結
果、このエッチング性の低下は、塩素イオンが30pp
m以上混入することにより発生することを発見した。
By the way, this etching solution has a new problem that the etching property of nickel or nickel alloy is deteriorated and nickel or nickel alloy residue is generated. As a result of diligent studies by the present inventors, this decrease in etching property was caused by chlorine ions of 30 pp.
It was discovered that this occurs due to mixing of m or more.

【0010】本発明は、簡便な方法でニッケル又はニッ
ケル合金のエッチング液から塩素イオンを除去する方法
とこの方法を用いて塩素イオンを除去したエッチング液
を用いた配線板の製造方法を提供することを目的とする
ものである。
The present invention provides a method for removing chlorine ions from a nickel or nickel alloy etching solution by a simple method and a method for producing a wiring board using the etching solution from which chlorine ions have been removed by using this method. The purpose is.

【0011】[0011]

【課題を解決するための手段】本発明のエッチング液中
の塩素イオンを除去する方法は、硝酸と過酸化水素を主
成分とする酸性溶液に、添加剤として、カルボキシル基
を含む有機酸と、環構成員として−NH−又は=N−の
形で窒素原子を含有している複素環式化合物とを含む、
ニッケル及び/又はニッケル合金のエッチング液に、銅
を接触させることを特徴とする。
The method for removing chlorine ions in an etching solution of the present invention comprises: an acidic solution containing nitric acid and hydrogen peroxide as main components; and an organic acid containing a carboxyl group as an additive, A heterocyclic compound containing a nitrogen atom in the form of -NH- or = N- as a ring member,
It is characterized in that copper is brought into contact with an etching solution of nickel and / or a nickel alloy.

【0012】ここで、硝酸はニッケルの剥離に必要な酸
度を保持させるために使用され、その使用量は100〜
300g/lである。硝酸の濃度を100〜300g/
lとしたのは、100g/lより少ないと剥離作用が弱
く、300g/lより多いと酸度が強すぎて基質として
銅層を用いたときに、過度にエッチングする場合がある
からである。
Here, nitric acid is used to maintain the acidity necessary for stripping nickel, and the amount used is 100 to 100.
It is 300 g / l. The concentration of nitric acid is 100-300g /
When the amount is less than 100 g / l, the peeling action is weak, and when the amount is more than 300 g / l, the acidity is too strong and excessive etching may occur when the copper layer is used as the substrate.

【0013】また、過酸化水素は酸化剤として作用し、
ニッケルを酸化してニッケルの剥離を促進するものであ
り、その使用量は5〜20ml/lが好ましい。その理
由は、5ml/l未満では、酸化剤としての効果が充分
でなく、20ml/lを越える場合には酸化作用が強す
ぎるため基質の銅層を過度にエッチングする場合がある
からである。
Further, hydrogen peroxide acts as an oxidant,
It oxidizes nickel to promote the exfoliation of nickel, and the amount used is preferably 5 to 20 ml / l. The reason is that if it is less than 5 ml / l, the effect as an oxidant is not sufficient, and if it exceeds 20 ml / l, the oxidizing effect is too strong, and the copper layer of the substrate may be excessively etched.

【0014】本発明における第1の添加剤成分のカルボ
キシル基を有する有機酸としては、酸の強さKaが10
-3〜10-5のものが好ましく、例えば、蟻酸、酢酸、プ
ロピオン酸、酪酸、コハク酸、グルタル酸、乳酸、リン
ゴ酸、クエン酸、酒石酸及びこれらの誘導体が挙げられ
る。このような有機酸は、ニッケル合金層を剥離した時
に銅基質の溶解を充分抑制するのに効果的な量で使用す
るのが好ましい。この有機酸は、剥離液中で好ましく
は、10〜200g/lである。有機酸の濃度を10〜
200g/lとした理由は、10g/l未満では基質の
銅層の腐食抑制効果が小さく、200g/lを越える場
合には、それ以上の効果が期待できず実用上不経済であ
るからである。したがって有機酸の濃度は、10〜20
0g/lが好ましい。
The organic acid having a carboxyl group as the first additive component in the present invention has an acid strength Ka of 10
-3 to 10 -5 are preferable, and examples thereof include formic acid, acetic acid, propionic acid, butyric acid, succinic acid, glutaric acid, lactic acid, malic acid, citric acid, tartaric acid, and derivatives thereof. Such an organic acid is preferably used in an amount effective to sufficiently suppress the dissolution of the copper substrate when the nickel alloy layer is peeled off. This organic acid is preferably 10 to 200 g / l in the stripping solution. Organic acid concentration of 10
The reason for setting it to 200 g / l is that if it is less than 10 g / l, the corrosion inhibiting effect on the copper layer of the substrate is small, and if it exceeds 200 g / l, no further effect can be expected and it is uneconomical in practice. . Therefore, the concentration of the organic acid is 10 to 20.
0 g / l is preferred.

【0015】本発明の第2の添加剤成分としては、環構
成員として−NH−又は、=N−の形で窒素原子を含有
している複素環式化合物で、酸性溶液に溶解可能なもの
であり、トリアゾール及びこれらの誘導体が挙げられ
る。トリアゾール又はその誘導体の添加量は1〜10g
/lが好ましい。トリアゾール又はその誘導体の添加量
を1〜10g/lとしたのは、1g/l未満では、基質
の銅層の腐食抑制効果が小さく、10g/lを越える場
合には、それ以上の効果が期待できず実用上不経済であ
るからである。したがってトリアゾール又はその誘導体
の添加量は1〜10g/lが好ましい。
The second additive component of the present invention is a heterocyclic compound containing a nitrogen atom in the form of -NH- or = N- as a ring member, which is soluble in an acidic solution. And include triazoles and their derivatives. The addition amount of triazole or its derivative is 1 to 10 g.
/ L is preferred. The amount of triazole or its derivative added is set to 1 to 10 g / l because the effect of inhibiting the corrosion of the copper layer of the substrate is small when the amount is less than 1 g / l, and the effect is expected to be higher when the amount exceeds 10 g / l. This is because it cannot be done and it is uneconomical in practice. Therefore, the addition amount of triazole or its derivative is preferably 1 to 10 g / l.

【0016】本発明に使用する銅は、金属銅であれば良
く、銅板、銅粒子、銅粉、銅フィルタ、MCL等があ
り、これらをエッチング液に接触させることにより塩素
イオンを除去する。接触させる方法は、塩素イオンを除
去できるならば何れの方法でも良く、浸漬、スプレーに
よる吹き付け等がある。
The copper used in the present invention may be any metallic copper, such as copper plate, copper particles, copper powder, copper filter, MCL, etc., and chlorine ions are removed by bringing them into contact with an etching solution. Any method may be used as the contacting method as long as chlorine ions can be removed, such as immersion and spraying.

【0017】このような、エッチング液から塩素イオン
を除去する方法を用いて、以下の工程をにより、配線板
を製造することができる。 A.絶縁基材表面に銅箔を張り合わせた銅張り積層板の
銅表面に、めっきレジストを形成する工程 B.露出した箇所にニッケル又はニッケル合金のめっき
を行い、めっきレジストを除去した後、露出した銅箔の
みをエッチング除去する工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に基板を接
触させることにより、ニッケル又はニッケル合金をエッ
チング除去する工程
A wiring board can be manufactured by the following steps using such a method of removing chlorine ions from the etching solution. A. Step of forming plating resist on copper surface of copper-clad laminate in which copper foil is laminated on insulating substrate surface B. Step of plating nickel or nickel alloy on the exposed portion, removing the plating resist, and etching away only the exposed copper foil C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed

【0018】また、以下の工程とすることもできる。 A.絶縁基材表面に銅箔を張り合わせた銅張り積層板に
穴をあけ穴内壁及び銅箔表面に無電解銅めっきを行い、
その銅表面にめっきレジストを形成する工程 B.露出した箇所にニッケル又はニッケル合金のめっき
を行い、めっきレジストを除去した後、露出した銅箔の
みをエッチング除去する工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に基板を接
触させることにより、ニッケル又はニッケル合金のみを
エッチング除去する工程
The following steps can also be performed. A. Make a hole in the copper-clad laminate, which is a copper foil laminated to the surface of the insulating substrate, and perform electroless copper plating on the inner wall of the hole and the copper foil surface.
Step of forming plating resist on the copper surface B. Step of plating nickel or nickel alloy on the exposed portion, removing the plating resist, and etching away only the exposed copper foil C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. A step of etching and removing only nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed

【0019】さらに、以下の工程とすることもできる。 A.絶縁基材表面に、第1の銅層と0.04〜1.5μ
mのニッケル又はニッケル合金の層と、第2の銅層を有
する金属箔を第1の銅層が絶縁基材に接するように重ね
加熱加圧して積層一体化する工程 B.前記積層板の第2の銅層のみをエッチング除去する
工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に前記積層
板を接触させることにより、ニッケル又はニッケル合金
のみをエッチング除去する工程 E.その積層板に穴をあけ、穴内壁と露出した銅表面全
面に無電解めっきを行い、必要な場合にはさらに電解め
っきを行って、回路導体として必要な厚さを確保する工
程 F.エッチングレジストを必要な回路の形状に形成し、
露出した銅をエッチング除去する工程
Further, the following steps can be performed. A. On the surface of the insulating substrate, the first copper layer and 0.04 ~ 1.5μ
m. Nickel or nickel alloy layer and the metal foil having the second copper layer are laminated and integrated by heating and pressing so that the first copper layer is in contact with the insulating substrate. Step of etching away only the second copper layer of the laminate C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing only nickel or nickel alloy by bringing the laminate into contact with the etching solution from which chlorine ions have been removed E. Step of making a hole in the laminated plate and performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further performing electrolytic plating if necessary to secure a necessary thickness as a circuit conductor F. Form the etching resist into the required circuit shape,
Process to remove exposed copper by etching

【0020】さらにまた、以下の工程とすることもでき
る。 A.絶縁基材表面に、第1の銅層と0.04〜1.5μ
mのニッケル又はニッケル合金の層と、第2の銅層を有
する金属箔を第1の銅層が絶縁基材に接するように重ね
加熱加圧して積層一体化する工程 B.前記積層板の第2の銅層のみをエッチング除去し穴
をあける工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に前記基板
を接触させることにより、ニッケル又はニッケル合金の
みをエッチング除去する工程 E.穴内壁と露出した銅表面全面に無電解めっきを行
い、必要な場合にはさらに電解めっきを行って、回路導
体として必要な厚さを確保する工程 F.エッチングレジストを必要な回路の形状に形成し、
露出した銅をエッチング除去する工程
Furthermore, the following steps can be carried out. A. On the surface of the insulating substrate, the first copper layer and 0.04 ~ 1.5μ
m. Nickel or nickel alloy layer and the metal foil having the second copper layer are laminated and integrated by heating and pressing so that the first copper layer is in contact with the insulating substrate. Step of etching and punching only the second copper layer of the laminate C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing only nickel or a nickel alloy by bringing the substrate into contact with the etching solution from which chlorine ions have been removed. Step of performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further electrolytic plating if necessary to secure a necessary thickness as a circuit conductor F. Form the etching resist into the required circuit shape,
Process to remove exposed copper by etching

【0021】[0021]

【作用】本発明に用いるエッチング液の主成分は、硝酸
と過酸化水素でありニッケルの溶解は下記の反応により
進むと考えられている。 Ni+H22→NiO+H2O (1) NiO+2HNO3→Ni(NO32+H2O (2) また、銅も同じ様に反応して溶解すると考えられてい
る。 Cu+H22→CuO+H2O (3) CuO+2HNO3→Cu(NO32+H2O (4) ここで、エッチング液中に塩素イオンが存在する場合、
以下の(5)式の反応が起こると考えられ、塩化第1銅
は、溶解度が低いため、ニッケル表面に付着することに
よりニッケルの溶解が阻害されていると考えられる。 Cu+Cu(NO32+2Cl-→2CuCl+2NO3 - (5) 本発明で用いられる塩素イオンの除去方法は、硝酸と過
酸化水素を主成分とする酸性溶液に、添加剤としてカル
ボキシル基を含む有機酸と、環構成員として−NH−又
は=N−の形で窒素原子を含有している複素環式化合物
とを含む、ニッケル及び/又はニッケル合金のエッチン
グ液に、銅を接触させることにより、銅表面に溶解度の
低い塩化第1銅を生成させ塩素イオンを除去することが
できると考えられる。
The main components of the etching solution used in the present invention are nitric acid and hydrogen peroxide, and it is considered that the dissolution of nickel proceeds by the following reaction. Ni + H 2 O 2 → NiO + H 2 O (1) NiO + 2HNO 3 → Ni (NO 3 ) 2 + H 2 O (2) It is also believed that copper reacts and dissolves in the same manner. Cu + H 2 O 2 → CuO + H 2 O (3) CuO + 2HNO 3 → Cu (NO 3 ) 2 + H 2 O (4) Here, when chlorine ions are present in the etching solution,
It is considered that the reaction of the following formula (5) occurs, and since cuprous chloride has a low solubility, it is considered that the dissolution of nickel is hindered by being attached to the nickel surface. Cu + Cu (NO 3 ) 2 + 2Cl → 2CuCl + 2NO 3 (5) The chlorine ion removal method used in the present invention is carried out by adding an organic acid containing a carboxyl group as an additive to an acidic solution containing nitric acid and hydrogen peroxide as main components. And a heterocyclic compound containing a nitrogen atom in the form of -NH- or = N- as a ring member, the copper is brought into contact with an etching solution of nickel and / or a nickel alloy. It is considered that it is possible to generate cuprous chloride having a low solubility on the surface and remove chlorine ions.

【0022】[0022]

【実施例】【Example】

実施例1 ニッケル及び/又はニッケル合金のエッチング液とし
て、下記の組成の液を用いて塩素イオンの除去処理を行
った後、塩素イオン濃度の測定及び選択エッチング性を
調べた結果を表1に示す。 (組成及び条件) 硝酸 200g/l 過酸化水素水 10ml/l 酢酸 100g/l ベンゾトリアゾール 5g/l 塩素イオン濃度 50ppm 処理温度 50℃ 銅板処理量 100dm2/l 処理時間 10分間
Example 1 Table 1 shows the results of measuring the chlorine ion concentration and examining the selective etching property after performing a chlorine ion removal treatment using a liquid having the following composition as an etching liquid for nickel and / or a nickel alloy. . (Composition and conditions) Nitric acid 200 g / l Hydrogen peroxide water 10 ml / l Acetic acid 100 g / l Benzotriazole 5 g / l Chloride concentration 50 ppm Treatment temperature 50 ° C. Copper plate treatment amount 100 dm 2 / l Treatment time 10 minutes

【0023】実施例2 ニッケル及び/又はニッケル合金のエッチング液とし
て、下記の組成の液を用いて塩素イオンの除去処理を行
った後、塩素イオン濃度の測定及び選択エッチング性を
調べた結果を表1に示す。 (組成) 硝酸 200g/l 過酸化水素水 10ml/l りんご酸 100g/l ベンドトリアゾール 5g/l 塩素イオン濃度 100ppm 処理温度 50℃ 銅粒子処理量 100dm2/l 処理時間 10分間
Example 2 As a nickel and / or nickel alloy etching solution, a solution having the following composition was used to remove chlorine ions, and then the results of measuring the chlorine ion concentration and examining the selective etching property are shown. Shown in 1. (Composition) Nitric acid 200 g / l Hydrogen peroxide water 10 ml / l Malic acid 100 g / l Bendtriazole 5 g / l Chloride ion concentration 100 ppm Treatment temperature 50 ° C. Copper particle treatment amount 100 dm 2 / l Treatment time 10 minutes

【0024】実施例3 ニッケル及び/又はニッケル合金のエッチング液とし
て、下記の組成の液を用いて塩素イオンの除去処理を行
った後、塩素イオン濃度の測定及び選択エッチング性を
調べた結果を表1に示す。 (組成) 硝酸 200g/l 過酸化水素水 10ml/l くえん酸 100g/l ベンドトリアゾール 5g/l 塩素イオン濃度 50ppm 処理温度 50℃ 銅フィルタ処理量 100dm2/l 処理時間 10分間
Example 3 As a nickel and / or nickel alloy etching solution, a solution having the following composition was used to remove chlorine ions, and then the results of measuring the chlorine ion concentration and examining the selective etching property are shown. Shown in 1. (Composition) Nitric acid 200 g / l Hydrogen peroxide water 10 ml / l Citric acid 100 g / l Bendtriazole 5 g / l Chloride ion concentration 50 ppm Treatment temperature 50 ° C. Copper filter treatment amount 100 dm 2 / l Treatment time 10 minutes

【0025】比較例1 ニッケル及び/又はニッケル合金のエッチング液とし
て、下記の組成の液を用いて塩素イオンの除去処理を行
った後、塩素イオン濃度の測定及び選択エッチング性を
調べた結果を表1に示す。 (組成) 硝酸 200g/l 過酸化水素水 10ml/l 酢酸 100g/l ベンドトリアゾール 5g/l 塩素イオン濃度 50ppm 処理温度 50℃
COMPARATIVE EXAMPLE 1 As a nickel and / or nickel alloy etching solution, a solution having the following composition was used to remove chlorine ions, and then the chlorine ion concentration was measured and the selective etching property was investigated. Shown in 1. (Composition) Nitric acid 200 g / l Hydrogen peroxide water 10 ml / l Acetic acid 100 g / l Bend triazole 5 g / l Chloride concentration 50 ppm Treatment temperature 50 ° C.

【0026】比較例2 ニッケル及び/又はニッケル合金のエッチング液とし
て、下記の組成の液を用いて塩素イオンの除去処理を行
った後、塩素イオン濃度の測定及び選択エッチング性を
調べた結果を表1に示す。 (組成) 硝酸 200g/l 過酸化水素水 10ml/l りんご酸 100g/l ベンドトリアゾール 5g/l 塩素イオン濃度 100ppm 処理温度 50℃
COMPARATIVE EXAMPLE 2 As a nickel and / or nickel alloy etching solution, a solution having the following composition was used to remove chlorine ions, and then the chlorine ion concentration was measured and the selective etching property was investigated. Shown in 1. (Composition) Nitric acid 200 g / l Hydrogen peroxide water 10 ml / l Malic acid 100 g / l Bend triazole 5 g / l Chloride ion concentration 100 ppm Treatment temperature 50 ° C.

【0027】(試験) (1)材料の調整 ニッケル及びニッケル−リン合金層を有する試料とし
て、20×50mmのエポキシ銅張り積層板の銅上に以
下のニッケル−リン合金めっき液及び条件で約0.2μ
mのニッケル−リン合金をめっきしたMCLを作製し
た。ニッケル及びニッケル−リン合金の膜厚は、蛍光X
線膜厚計SFT−8000(セイコー電子株式会社製、
商品名)を使用して測定した。 (ニッケルめっき液の組成) 硫酸ニッケル 240g/l 塩化ニッケル 45g/l ほう酸 30g/l (めっき条件) 温度 35℃ 電流密度 1.5A/dm2 時間 4分間 (ニッケル−リンめっき液の組成) 硫酸ニッケル 240g/l 塩化ニッケル 45g/l ほう酸 30g/l 亜りん酸 5g/l (めっき条件) 温度 35℃ 電流密度 1.5A/dm2 時間 4分間
(Test) (1) Adjustment of Material As a sample having nickel and nickel-phosphorus alloy layers, about 0 × 50 mm of epoxy copper-clad laminate board was coated with the following nickel-phosphorus alloy plating solution and conditions. .2μ
m of nickel-phosphorus alloy was plated. The film thickness of nickel and nickel-phosphorus alloy is fluorescent X
Linear film thickness meter SFT-8000 (manufactured by Seiko Instruments Inc.,
(Trade name) was used for measurement. (Composition of nickel plating solution) Nickel sulfate 240 g / l Nickel chloride 45 g / l Boric acid 30 g / l (Plating conditions) Temperature 35 ° C Current density 1.5 A / dm 2 hours 4 minutes (Composition of nickel-phosphorus plating solution) Nickel sulfate 240 g / l Nickel chloride 45 g / l Boric acid 30 g / l Phosphorous acid 5 g / l (plating conditions) Temperature 35 ° C. Current density 1.5 A / dm 2 hours 4 minutes

【0028】(2)選択エッチング性試験 塩素イオン除去処理を行ったものと行わないエッチング
液に、上記MCLを浸漬し各試料のニッケル−リン合金
のエッチング性及び素地銅箔の厚さの減少量を調べた。
膜厚の測定には前記蛍光X線膜厚計を使用して測定し
た。ニッケル−リン合金が選択的にエッチングできてい
るものを○、エッチング残りが発生するものを×とし
た。
(2) Selective Etching Property Test The above MCL was dipped in an etching solution with and without chlorine ion removal treatment to etch the nickel-phosphorus alloy of each sample and to reduce the thickness of the base copper foil. I checked.
The fluorescent X-ray film thickness meter was used to measure the film thickness. The case where the nickel-phosphorus alloy could be selectively etched was evaluated as ◯, and the case where the etching residue was generated was evaluated as x.

【0029】[0029]

【表1】 [Table 1]

【0030】実施例4 エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り
積層板であるMCL−E−67(日立化成工業株式会
社、商品名)の銅箔表面に、めっきレジストを形成し、
露出した箇所に、前記ニッケルめっきを行い、めっきレ
ジストを除去した後、露出した銅箔のみをアルカリエッ
チャントでエッチング除去し、実施例1に用いたエッチ
ング液に接触させることにより、ニッケルのみをエッチ
ング除去し、片面の回路板とした。
Example 4 A plating resist was formed on the copper foil surface of MCL-E-67 (Hitachi Chemical Co., Ltd., trade name), which is a copper-clad laminate obtained by laminating a copper foil on the surface of an epoxy resin insulating substrate. ,
Nickel plating is performed on the exposed portion to remove the plating resist, and then only the exposed copper foil is removed by etching with an alkaline etchant, and the etching solution used in Example 1 is contacted to remove only nickel. However, it was a single-sided circuit board.

【0031】実施例5 エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り
積層板であるMCL−E−67(日立化成工業株式会
社、商品名)にドリルで穴をあけ、穴内壁及び銅箔表面
に無電解めっきを行い、その銅表面にめっきレジストを
形成し、前記ニッケル−リン合金めっきを行い、めっき
レジストを除去した後、露出した銅箔のみをアルカリエ
ッチャントでエッチング除去し、実施例2のエッチング
液に接触させることにより、ニッケル−リンのみをエッ
チング除去し、両面回路板とした。
Example 5 MCL-E-67 (Hitachi Chemical Co., Ltd., trade name), which is a copper-clad laminate in which a copper foil is laminated on the surface of an epoxy resin insulating substrate, is drilled to form an inner wall of the hole and copper. Electroless plating is performed on the foil surface, a plating resist is formed on the copper surface, the nickel-phosphorus alloy plating is performed, and after removing the plating resist, only the exposed copper foil is removed by etching with an alkaline etchant. Only nickel-phosphorus was removed by etching by bringing it into contact with the etching solution of No. 2 to obtain a double-sided circuit board.

【0032】実施例6 エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り
積層板であるMCL−E−67(日立化成工業株式会
社、商品名)を内層回路加工したものに、プリプレグE
−67(日立化成工業株式会社、商品名)と、35μm
厚さの銅箔を張り合わせた積層板に穴をあけ、穴内壁及
び銅箔表面に無電解めっきを行い、その銅表面にめっき
レジストを形成し、前記ニッケルめっきを行い、めっき
レジストを除去した後、露出した銅箔のみをアルカリエ
ッチャントでエッチング除去し、実施例3のエッチング
液に接触させることにより、ニッケルのみをエッチング
除去し、多層回路板とした。
Example 6 A copper-clad laminate MCL-E-67 (Hitachi Chemical Co., Ltd., trade name) in which a copper foil is laminated on the surface of an epoxy resin insulating substrate is processed into an inner layer circuit, and prepreg E
-67 (Hitachi Chemical Co., Ltd., trade name), 35 μm
After making a hole in the laminated plate laminated with a copper foil of thickness, electroless plating is performed on the inner wall of the hole and the surface of the copper foil, a plating resist is formed on the copper surface, the nickel plating is performed, and after removing the plating resist Then, only the exposed copper foil was removed by etching with an alkaline etchant, and by contacting it with the etching solution of Example 3, only nickel was removed by etching to obtain a multilayer circuit board.

【0033】実施例7 絶縁基材プリプレグE−67(日立化成工業株式会社、
商品名)の表面に、0.04〜1.5μmのニッケル−
リン合金層と5μmの銅層を有する金属箔を、銅層が絶
縁基材に接するように重ね、加熱加圧して積層一体化
し、その積層板に穴をあけ実施例1のエッチング液に接
触させることにより、ニッケル−リン合金層のみをエッ
チング除去し、その積層板の穴内壁と露出した銅表面全
面に無電解めっきを20μm行いエッチングレジストを
必要な回路の形状に形成し、露出した銅をエッチング除
去して、両面回路板とした。
Example 7 Insulating substrate prepreg E-67 (Hitachi Chemical Co., Ltd.,
0.04 to 1.5 μm nickel on the surface of the product name)
A metal foil having a phosphorus alloy layer and a copper layer having a thickness of 5 μm is superposed so that the copper layer contacts the insulating base material, heated and pressed to be laminated and integrated, and a hole is made in the laminated plate to bring it into contact with the etching solution of Example 1. By doing so, only the nickel-phosphorus alloy layer is removed by etching, electroless plating is performed on the entire inner wall of the hole and the exposed copper surface of the laminated plate by 20 μm to form an etching resist in a required circuit shape, and the exposed copper is etched. It was removed to obtain a double-sided circuit board.

【0034】実施例8 絶縁基材プリプレグE−67(日立化成工業株式会社、
商品名)の表面に、1〜15μmの第1の銅層と0.0
4〜1.5μmのニッケル−リン合金層と第2銅層とを
有する金属箔を、第1の銅層が絶縁基材に接するように
重ね、加熱加圧して積層一体化し、第2の銅層のみをア
ルカリエッチャントでエッチング除去し、実施例2のエ
ッチング液に接触させることにより、ニッケル−リン合
金層のみをエッチング除去し、その積層板に穴をあけそ
の積層板の穴内壁と露出した銅表面全面に無電解めっき
を行い、さらに電解めっきを行って、回路導体として必
要な35μmを確保し、エッチングレジストを必要な回
路の形状に形成し、露出した銅をエッチング除去して、
配線板とした。
Example 8 Insulating substrate prepreg E-67 (Hitachi Chemical Co., Ltd.,
The first copper layer of 1 to 15 μm and 0.0
A metal foil having a nickel-phosphorus alloy layer of 4 to 1.5 μm and a second copper layer is stacked so that the first copper layer is in contact with the insulating base material, and heated and pressed to be laminated and integrated to form a second copper layer. Only the layer is removed by etching with an alkaline etchant, and the nickel-phosphorus alloy layer is removed by etching by contacting it with the etching solution of Example 2, and a hole is made in the laminated plate and the inner wall of the hole of the laminated plate and the exposed copper. Electroless plating is performed on the entire surface, and further electrolytic plating is performed to secure 35 μm required as a circuit conductor, an etching resist is formed in a required circuit shape, and exposed copper is removed by etching.
It was a wiring board.

【0035】実施例9 エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り
積層板であるMCL−E−67(日立化成工業株式会
社、商品名)を内層回路加工したものに、プリプレグE
−67(日立化成工業株式会社、商品名)と、1〜15
μmの第1の銅層と0.04〜1.5μmのニッケル−
リン合金層と第2銅層とを有する金属箔を、第1の銅層
が絶縁基材に接するように重ね、加熱加圧して積層一体
化し、第2の銅層のみをアルカリエッチャントでエッチ
ング除去し、実施例3のエッチング液に接触させること
により、ニッケル−リン合金層のみをエッチング除去
し、その積層板に穴をあけその積層板の穴内壁と露出し
た銅表面全面に無電解めっきを行い、さらに電解めっき
を行って、回路導体として必要な35μmを確保し、エ
ッチングレジストを必要な回路の形状に形成し、露出し
た銅をエッチング除去して、多層配線板とした。
Example 9 MCL-E-67 (Hitachi Chemical Co., Ltd., trade name), which is a copper-clad laminate in which a copper foil is laminated on the surface of an epoxy resin insulating substrate, is processed into an inner layer circuit, and prepreg E
-67 (Hitachi Chemical Co., Ltd., trade name), 1-15
μm first copper layer and 0.04 to 1.5 μm nickel-
A metal foil having a phosphorus alloy layer and a second copper layer is stacked so that the first copper layer is in contact with the insulating base material, heated and pressed to be laminated and integrated, and only the second copper layer is removed by etching with an alkaline etchant. Then, only the nickel-phosphorus alloy layer is removed by etching by bringing it into contact with the etching solution of Example 3, and a hole is made in the laminated plate to perform electroless plating on the inner wall of the hole of the laminated plate and the entire exposed copper surface. Further, electrolytic plating was performed to secure 35 μm required as a circuit conductor, an etching resist was formed into a required circuit shape, and exposed copper was removed by etching to obtain a multilayer wiring board.

【0036】[0036]

【発明の効果】本発明によれば、銅をエッチング液に接
触させることでエッチング液中に含まれる塩素イオンを
除去し、ニッケル又はニッケル合金のエッチング性を改
善することができる。
According to the present invention, by contacting copper with an etching solution, chlorine ions contained in the etching solution can be removed and the etching property of nickel or nickel alloy can be improved.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/42 B 7511−4E (72)発明者 南 宣行 茨城県下館市大字小川1500番地 日立化成 工業株式会社下館工場内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Reference number within the agency FI Technical display location H05K 3/42 B 7511-4E (72) Inventor Nobuyuki Minami 1500 Ogawa Ogawa, Shimodate-shi, Ibaraki Hitachi Chemical Shimodate Factory of Industrial Co., Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】硝酸と過酸化水素を主成分とする酸性溶液
に、添加剤として、カルボキシル基を含む有機酸と、環
構成員として−NH−又は=N−の形で窒素原子を含有
している複素環式化合物とを含む、ニッケル及び/又は
ニッケル合金のエッチング液に、銅を接触させることを
特徴とするエッチング液中の塩素イオンを除去する方
法。
1. An acidic solution containing nitric acid and hydrogen peroxide as main components, which contains an organic acid containing a carboxyl group as an additive and a nitrogen atom in the form of —NH— or = N— as a ring member. The method for removing chlorine ions in an etching solution, which comprises contacting copper with an etching solution of nickel and / or a nickel alloy containing the heterocyclic compound.
【請求項2】環構成員として−NH−又は=N−の形で
窒素原子を含有している複素環式化合物が、トリアゾー
ルまたはその誘導体であることを特徴とする請求項1に
記載のエッチング液中の塩素イオンを銅を用いて除去す
る方法。
2. The etching according to claim 1, wherein the heterocyclic compound containing a nitrogen atom in the form of —NH— or ═N— as a ring member is triazole or a derivative thereof. A method of removing chlorine ions in a liquid using copper.
【請求項3】ニッケル及び/又はニッケル合金のエッチ
ング液の組成比が、硝酸が10〜30重量%、30%過
酸化水素水が5〜20ml/l、カルボキシル基を含む
有機酸が1〜20重量%、トリアゾールまたはその誘導
体が0.1〜1重量%であることを特徴とするエッチン
グ液中の塩素イオンを除去する方法。
3. The composition ratio of the etching liquid of nickel and / or nickel alloy is 10 to 30% by weight of nitric acid, 5 to 20 ml / l of 30% hydrogen peroxide solution, and 1 to 20 of organic acid containing a carboxyl group. % Of triazole or its derivative is 0.1 to 1% by weight, and a method for removing chlorine ions in an etching solution, characterized in that
【請求項4】以下の工程を含むことを特徴とする配線板
の製造方法。 A.絶縁基材表面に銅箔を張り合わせた銅張り積層板の
銅表面に、めっきレジストを形成する工程 B.露出した箇所にニッケル又はニッケル合金のめっき
を行い、めっきレジストを除去した後、露出した銅箔の
みをエッチング除去する工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に基板を接
触させることにより、ニッケル又はニッケル合金をエッ
チング除去する工程
4. A method for manufacturing a wiring board, comprising the following steps. A. Step of forming plating resist on copper surface of copper-clad laminate in which copper foil is laminated on insulating substrate surface B. Step of plating nickel or nickel alloy on the exposed portion, removing the plating resist, and etching away only the exposed copper foil C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed
【請求項5】以下の工程を含むことを特徴とする配線板
の製造方法。 A.絶縁基材表面に銅箔を張り合わせた銅張り積層板に
穴をあけ穴内壁及び銅箔表面に無電解銅めっきを行い、
その銅表面にめっきレジストを形成する工程 B.露出した箇所にニッケル又はニッケル合金のめっき
を行い、めっきレジストを除去した後、露出した銅箔の
みをエッチング除去する工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に基板を接
触させることにより、ニッケル又はニッケル合金のみを
エッチング除去する工程
5. A method of manufacturing a wiring board, comprising the following steps. A. Make a hole in the copper-clad laminate, which is a copper foil laminated to the surface of the insulating substrate, and perform electroless copper plating on the inner wall of the hole and the copper foil surface.
Step of forming plating resist on the copper surface B. Step of plating nickel or nickel alloy on the exposed portion, removing the plating resist, and etching away only the exposed copper foil C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. A step of etching and removing only nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed
【請求項6】以下の工程を含むことを特徴とする配線板
の製造方法。 A.絶縁基材表面に、第1の銅層と0.04〜1.5μ
mのニッケル又はニッケル合金の層と、第2の銅層を有
する金属箔を第1の銅層が絶縁基材に接するように重ね
加熱加圧して積層一体化する工程 B.前記積層板の第2の銅層のみをエッチング除去する
工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に前記積層
板を接触させることにより、ニッケル又はニッケル合金
のみをエッチング除去する工程 E.その積層板に穴をあけ、穴内壁と露出した銅表面全
面に無電解めっきを行い、必要な場合にはさらに電解め
っきを行って、回路導体として必要な厚さを確保する工
程 F.エッチングレジストを必要な回路の形状に形成し、
露出した銅をエッチング除去する工程
6. A method of manufacturing a wiring board, comprising the following steps. A. On the surface of the insulating substrate, the first copper layer and 0.04 ~ 1.5μ
m. Nickel or nickel alloy layer and the metal foil having the second copper layer are laminated and integrated by heating and pressing so that the first copper layer is in contact with the insulating substrate. Step of etching away only the second copper layer of the laminate C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing only nickel or nickel alloy by bringing the laminate into contact with the etching solution from which chlorine ions have been removed E. Step of making a hole in the laminated plate and performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further performing electrolytic plating if necessary to secure a necessary thickness as a circuit conductor F. Form the etching resist into the required circuit shape,
Process to remove exposed copper by etching
【請求項7】以下の工程を含むことを特徴とする配線板
の製造方法。 A.絶縁基材表面に、第1の銅層と0.04〜1.5μ
mのニッケル又はニッケル合金の層と、第2の銅層を有
する金属箔を第1の銅層が絶縁基材に接するように重ね
加熱加圧して積層一体化する工程 B.前記積層板の第2の銅層のみをエッチング除去し穴
をあける工程 C.硝酸と過酸化水素を主成分とする酸性溶液に、添加
剤としてカルボキシル基を含む有機酸と、環構成員とし
て−NH−又は=N−の形で窒素原子を含有している複
素環式化合物とを含むエッチング液に銅を接触させ塩素
イオンを除去する工程 D.上記塩素イオンを除去したエッチング液に前記基板
を接触させることにより、ニッケル又はニッケル合金の
みをエッチング除去する工程 E.穴内壁と露出した銅表面全面に無電解めっきを行
い、必要な場合にはさらに電解めっきを行って、回路導
体として必要な厚さを確保する工程 F.エッチングレジストを必要な回路の形状に形成し、
露出した銅をエッチング除去する工程
7. A method for manufacturing a wiring board, comprising the following steps. A. On the surface of the insulating substrate, the first copper layer and 0.04 ~ 1.5μ
m. Nickel or nickel alloy layer and the metal foil having the second copper layer are laminated and integrated by heating and pressing so that the first copper layer is in contact with the insulating substrate. Step of etching and punching only the second copper layer of the laminate C. A heterocyclic compound containing an acidic solution containing nitric acid and hydrogen peroxide as main components, an organic acid containing a carboxyl group as an additive, and a nitrogen atom in the form of -NH- or = N- as a ring member. Step of contacting copper with an etching solution containing and removing chlorine ions D. Step of etching and removing only nickel or a nickel alloy by bringing the substrate into contact with the etching solution from which chlorine ions have been removed. Step of performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further electrolytic plating if necessary to secure a necessary thickness as a circuit conductor F. Form the etching resist into the required circuit shape,
Process to remove exposed copper by etching
JP02661194A 1994-02-24 1994-02-24 Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution Expired - Fee Related JP3711565B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544436B2 (en) * 1996-07-29 2003-04-08 Ebara Dansan Ltd. Etchant, method for roughening copper surface and method for producing printed wiring board
WO2007020206A1 (en) * 2005-08-12 2007-02-22 Basf Se Stabilized etching solutions for cu and cu/ni layers
JP2009088334A (en) * 2007-10-01 2009-04-23 Nippon Mektron Ltd Printed circuit board manufacturing method
CN113957442A (en) * 2021-02-01 2022-01-21 江苏悦锌达新材料有限公司 Nickel removing liquid medicine for nickel electroplating anti-corrosion layer, preparation method and chemical nickel removing process

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8161637B2 (en) 2009-07-24 2012-04-24 Ibiden Co., Ltd. Manufacturing method for printed wiring board

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544436B2 (en) * 1996-07-29 2003-04-08 Ebara Dansan Ltd. Etchant, method for roughening copper surface and method for producing printed wiring board
US7189336B2 (en) 1996-07-29 2007-03-13 Ebara Densan Ltd. Etchant, method for roughening copper surface and method for producing printed wiring board
WO2007020206A1 (en) * 2005-08-12 2007-02-22 Basf Se Stabilized etching solutions for cu and cu/ni layers
JP2009505388A (en) * 2005-08-12 2009-02-05 ビーエーエスエフ ソシエタス・ヨーロピア Stabilized etching solution for Cu and Cu / Ni layers
US8652972B2 (en) 2005-08-12 2014-02-18 Basf Aktiengesellschaft Stabilized etching solutions for CU and CU/NI layers
JP2009088334A (en) * 2007-10-01 2009-04-23 Nippon Mektron Ltd Printed circuit board manufacturing method
CN113957442A (en) * 2021-02-01 2022-01-21 江苏悦锌达新材料有限公司 Nickel removing liquid medicine for nickel electroplating anti-corrosion layer, preparation method and chemical nickel removing process

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