JPH07235558A - Due bonding method of led chip to lead frame - Google Patents
Due bonding method of led chip to lead frameInfo
- Publication number
- JPH07235558A JPH07235558A JP2267294A JP2267294A JPH07235558A JP H07235558 A JPH07235558 A JP H07235558A JP 2267294 A JP2267294 A JP 2267294A JP 2267294 A JP2267294 A JP 2267294A JP H07235558 A JPH07235558 A JP H07235558A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- led chip
- die
- bonding
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＥＤチップをリード
フレームに接着剤を介してダイボンドする方法に係り、
特にサファイア基板表面に窒化ガリウム系化合物半導体
（ＩｎXＡｌYＧａ1-X-YＮ、０≦X≦１、０≦Y≦１）層
が積層されてなるＬＥＤチップをリードフレームにダイ
ボンドする方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of die-bonding an LED chip to a lead frame via an adhesive,
In particular, the present invention relates to a method of die-bonding an LED chip in which a gallium nitride-based compound semiconductor (In X Al Y Ga 1-XY N, 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1) layer is laminated on the surface of a sapphire substrate to a lead frame.
【０００２】[0002]
【従来の技術】窒化ガリウム系化合物半導体はサファイ
ア、ＺｎＯ、ＳｉＣ等の基板の表面に積層されてＬＥＤ
チップとされることが知られている。特に、現在実用化
されて市販されている光度１ｃｄの青色ＬＥＤはサファ
イアを基板とし、図１に示す構造を有している。図１は
この青色ＬＥＤの構造を示す模式断面図であり、サファ
イア基板１の上に窒化ガリウム系化合物半導体層２が積
層されてなるＬＥＤチップ３がリードフレーム１０に接
着剤４を介してダイボンドされていることを示してい
る。2. Description of the Related Art A gallium nitride-based compound semiconductor is laminated on the surface of a substrate of sapphire, ZnO, SiC or the like to form an LED.
It is known to be a chip. In particular, a blue LED having a luminous intensity of 1 cd, which has been put into practical use and is commercially available, has sapphire as a substrate and has a structure shown in FIG. FIG. 1 is a schematic cross-sectional view showing the structure of this blue LED. An LED chip 3 in which a gallium nitride-based compound semiconductor layer 2 is laminated on a sapphire substrate 1 is die-bonded to a lead frame 10 via an adhesive 4. It indicates that
【０００３】ＬＥＤチップ３をリードフレーム１０にダ
イボンドするには、通常ダイボンダーと呼ばれる自動機
器が使用される。ダイボンダーは、ウェーハの状態でチ
ップ状にされたＬＥＤチップを一つずつピックアップ
し、そのＬＥＤチップを所定の位置に固定されたリード
フレーム１０のカップ内に載置することにより、ＬＥＤ
チップとリードフレームとを接着する装置である。なお
カップ内には予め接着剤４がディスペンサにより注入さ
れている。To die bond the LED chip 3 to the lead frame 10, an automatic device called a die bonder is usually used. The die bonder picks up LED chips, which are formed into chips in the state of a wafer, one by one, and places the LED chips in a cup of a lead frame 10 fixed at a predetermined position, thereby forming an LED.
This is a device for bonding a chip and a lead frame. Note that the adhesive 4 is previously injected into the cup by a dispenser.
【０００４】ＬＥＤチップをダイボンドする際、一般に
接着剤には銀ペーストのように導電性を有し熱硬化性の
材料が使用される。なぜなら、従来のＬＥＤチップはＧ
ａＡｓ、ＧａＡｌＡｓ、ＧａＰ、ＧａＡｓＰ等の緑色〜
赤外を発光する半導体材料よりなり、これらの半導体材
料からなるＬＥＤチップはいずれも半導体基板の表面に
積層されている。従って半導体基板側から電極をとるた
めに、銀ペーストのような導電性を有して十分な接着力
がある材料が選択されるからである。しかし、サファイ
アのような絶縁性基板の上に積層される窒化ガリウム系
化合物半導体ＬＥＤチップは、図１のようにサファイア
基板１とリードフレーム１０とを接着する場合、導電性
材料を用いる必要がない。従って現在、図１の構造の青
色ＬＥＤでは接着剤４として、熱硬化性エポキシ樹脂の
ような絶縁材料が使用されている。また、熱硬化性材料
は加熱により接着剤内部まで均一に硬化できるために好
んで用いられる。When the LED chip is die-bonded, a conductive and thermosetting material such as silver paste is generally used as the adhesive. Because the conventional LED chip is G
Green of aAs, GaAlAs, GaP, GaAsP, etc.
LED chips made of semiconductor materials that emit infrared light are laminated on the surface of a semiconductor substrate. Therefore, in order to take the electrode from the semiconductor substrate side, a material having conductivity and sufficient adhesive force, such as silver paste, is selected. However, the gallium nitride-based compound semiconductor LED chip stacked on the insulating substrate such as sapphire does not need to use a conductive material when the sapphire substrate 1 and the lead frame 10 are bonded together as shown in FIG. . Therefore, at present, an insulating material such as a thermosetting epoxy resin is used as the adhesive 4 in the blue LED having the structure shown in FIG. Further, a thermosetting material is preferably used because it can be uniformly cured inside the adhesive by heating.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、通常の
熱硬化性材料は１時間程で硬化するものが多く（例えば
銀ペーストは１５０℃前後で１時間、熱硬化型のエポキ
シであれば１２０℃前後で１時間程で硬化する。）、そ
の粘性が加熱により変化するため、ダイボンド後、硬化
中にチップが所定の位置からずれるという問題がある。
チップの位置がずれると、次の工程で電極にワイヤーボ
ンドする際、ワイヤーボンド位置がずれたり、また最後
に樹脂で全体をモールドする際に光軸がずれてしまい製
品不良の原因となる。However, many ordinary thermosetting materials cure in about 1 hour (for example, silver paste is around 150 ° C. for 1 hour, and thermosetting epoxy is around 120 ° C.). However, there is a problem that the chip shifts from a predetermined position during curing after die bonding because the viscosity changes due to heating.
If the position of the chip shifts, the wire bond position shifts when wire-bonding to the electrode in the next step, or the optical axis shifts when the whole is finally molded with resin, which causes a product defect.
【０００６】接着剤を迅速に硬化させＬＥＤチップをリ
ードフレームにダイボンドできれば、上記問題は解決さ
れる。したがって本発明の目的とするところは、ＬＥＤ
チップをリードフレームにダイボンドするにあたり、チ
ップのズレがなく、迅速にかつ正確にダイボンドする方
法を提供することにある。If the adhesive can be rapidly cured and the LED chip can be die-bonded to the lead frame, the above problems can be solved. Therefore, the object of the present invention is to provide an LED
It is an object of the present invention to provide a method for quickly and accurately die-bonding a chip to a lead frame without die displacement.
【０００７】[0007]
【課題を解決するための手段】我々はＬＥＤチップをリ
ードフレームにダイボンドするにあたり、窒化ガリウム
系化合物半導体ＬＥＤチップ特有の性質を利用すること
により、前記問題が解決できることを見いだし本発明を
成すに至った。即ち、本発明のＬＥＤチップのリードフ
レームへのダイボンド方法は、サファイア基板表面に窒
化ガリウム系化合物半導体層が積層されてなるＬＥＤチ
ップをリードフレームに接着剤を介してダイボンドする
方法において、前記接着剤に、紫外線照射により硬化す
る透明な樹脂（以下、紫外線硬化樹脂という。）を使用
することを特徴とする。We have found that the above problems can be solved by utilizing the properties peculiar to gallium nitride-based compound semiconductor LED chips in die-bonding the LED chips to the lead frame, and completed the present invention. It was That is, the method of die-bonding the LED chip to the lead frame of the present invention is a method of die-bonding an LED chip, in which a gallium nitride-based compound semiconductor layer is laminated on the surface of a sapphire substrate, to the lead frame via an adhesive, wherein the adhesive In addition, a transparent resin (hereinafter, referred to as an ultraviolet curable resin) that is cured by irradiation with ultraviolet rays is used.
【０００８】紫外線光源としては、高圧水銀ランプ、キ
セノンランプ、ブラックライト等の紫外線領域に発光す
る光源を用いることができ、使用する紫外線硬化樹脂の
硬化波長に合わせて適宜光源を選択することが可能であ
る。As the ultraviolet light source, a light source which emits light in the ultraviolet region such as a high pressure mercury lamp, a xenon lamp or a black light can be used, and the light source can be appropriately selected according to the curing wavelength of the ultraviolet curing resin used. Is.
【０００９】また、紫外線硬化樹脂はその硬化速度が紫
外線を照射してから１０分以内、さらに好ましくは５分
以内で硬化するものを選択することが好ましい。１０分
より多くかかると、チップの位置ずれが発生しやすい傾
向にあるからである。紫外線硬化樹脂の硬化速度は、そ
の樹脂の性質または光源の光強度により調整でき、光源
の光強度を調整するには紫外光を石英ガラス、バリウム
ガラス等のレンズで集光したり、反射板を用いて集光す
ることにより調整できる。一例を挙げると、３６５ｎｍ
を発する高圧水銀ランプを用い、４０Ｗ／cm2の照射条
件で１０分以内に硬化するアクリル系、エポキシ系の樹
脂を用いることができる。Further, it is preferable to select an ultraviolet curable resin which has a curing speed within 10 minutes, more preferably within 5 minutes after the irradiation of ultraviolet rays. This is because if it takes more than 10 minutes, the displacement of the chip tends to occur. The curing speed of the UV curable resin can be adjusted by the property of the resin or the light intensity of the light source.To adjust the light intensity of the light source, the ultraviolet light is condensed with a lens such as quartz glass or barium glass, or a reflector is used. It can be adjusted by using and condensing. For example, 365nm
It is possible to use an acrylic resin or an epoxy resin that cures within 10 minutes under the irradiation condition of 40 W / cm 2 by using a high pressure mercury lamp that emits.
【００１０】さらに使用する紫外線硬化樹脂は透明な樹
脂を使用することが好ましい。なぜなら、図１に示すよ
うにＬＥＤチップをダイボンドすると、窒化ガリウム系
化合物半導体２の発光はサファイア基板１を通る。接着
剤４が透明な紫外線硬化樹脂であると、その発光は紫外
線硬化樹脂を透過してリードフレーム１０のカップ面に
達し、カップ面で反射させることができるのでＬＥＤチ
ップの外部量子効率が向上するからである。なお本発明
において、透明とは必ずしも無色透明を意味するもので
はなく、染料、顔料を添加して窒化ガリウム系化合物半
導体の発光を透過できるように透光性にしたもの、また
は紫外線照射により多少変色して透光性となっているも
のも含むものとする。Further, it is preferable to use a transparent resin as the ultraviolet curable resin used. This is because when the LED chip is die-bonded as shown in FIG. 1, the gallium nitride-based compound semiconductor 2 emits light through the sapphire substrate 1. When the adhesive 4 is a transparent UV curable resin, its light emission can be transmitted through the UV curable resin, reach the cup surface of the lead frame 10, and be reflected by the cup surface, so that the external quantum efficiency of the LED chip is improved. Because. In the present invention, the term “transparent” does not necessarily mean colorless and transparent, but a dye or pigment is added to make it translucent so that the light emission of the gallium nitride-based compound semiconductor can be transmitted, or it is slightly discolored by ultraviolet irradiation. It also includes those that are translucent.
【００１１】[0011]
【作用】本発明が窒化ガリウム系化合物半導体ＬＥＤチ
ップの特有の性質を利用していることを次に述べる。従
来、ＬＥＤは青色発光のものが実現されておらず、赤外
〜緑色までしか得られていなかった。その従来のＬＥＤ
は前にも述べたようにＧａＡｓ、ＧａＰ、ＧａＡｓＰ等
の半導体材料からなり、これら半導体材料はバンドギャ
ップエネルギーの関係から、紫外線を透過せず吸収して
しまう。例えば赤、赤外ＬＥＤに利用されているＧａＡ
ｓは１．４ｅＶ、緑色ＬＥＤに利用されているＧａＰは
２．３ｅＶのバンドギャップエネルギーを有する。しか
もそれらの半導体が積層される基板にはＧａＡｓまたは
ＧａＰが用いられている。つまり、紫外線を吸収材料が
半導体材料として使用されているため、接着剤に紫外線
で硬化する材料を使用しても、紫外線が接着剤にまで到
達しないので、全く接着剤の効果が得られない。また基
板側から電極を取り出す必要性から、紫外線照射で硬化
する導電性の材料はほとんどない。Next, it will be described that the present invention utilizes the unique property of the gallium nitride compound semiconductor LED chip. Conventionally, LEDs that emit blue light have not been realized, and only LEDs from infrared to green have been obtained. The conventional LED
As described above, the semiconductor material is made of GaAs, GaP, GaAsP or the like, and these semiconductor materials absorb the ultraviolet ray without transmitting it due to the band gap energy. For example, GaA used for red and infrared LEDs
s has a bandgap energy of 1.4 eV, and GaP used for a green LED has a bandgap energy of 2.3 eV. Moreover, GaAs or GaP is used for the substrate on which these semiconductors are laminated. That is, since an ultraviolet absorbing material is used as a semiconductor material, even if a material that cures with ultraviolet rays is used for the adhesive, the ultraviolet rays do not reach the adhesive, so that no adhesive effect can be obtained. In addition, since it is necessary to take out the electrode from the substrate side, there is almost no conductive material that is cured by ultraviolet irradiation.
【００１２】ところが、窒化ガリウム系化合物半導体
（ＧａＮは３．４ｅＶ）は紫外線をほとんど透過する材
料であり、基板であるサファイアも紫外線を透過する。
しかも実際の窒化ガリウム系化合物半導体ＬＥＤチップ
は窒化ガリウム系化合物半導体層の厚さが多くとも１０
μｍ以下であり、サファイア基板は少なくとも５０μｍ
以上の厚さを有している。つまり紫外線照射しても、窒
化ガリウム系化合物半導体層の厚さが薄いので、紫外線
がほとんど吸収されずにサファイア基板を透過すること
ができる。従って、紫外線を接着剤全体に照射できるの
で、紫外線硬化樹脂を窒化ガリウム系化合物半導体ＬＥ
Ｄチップに限って使用することができる。そして紫外線
硬化樹脂は迅速に硬化するので、ダイボンド時にチップ
の位置ずれが発生するのを防止することができる。However, the gallium nitride-based compound semiconductor (3.4 eV for GaN) is a material that transmits almost all ultraviolet rays, and sapphire, which is the substrate, also transmits ultraviolet rays.
Moreover, in an actual gallium nitride-based compound semiconductor LED chip, the thickness of the gallium nitride-based compound semiconductor layer is at most 10
μm or less, and the sapphire substrate is at least 50 μm
It has the above thickness. That is, even when irradiated with ultraviolet rays, the thickness of the gallium nitride-based compound semiconductor layer is thin, and therefore ultraviolet rays can be transmitted through the sapphire substrate with almost no absorption. Therefore, since the entire adhesive can be irradiated with ultraviolet rays, the ultraviolet curable resin is applied to the gallium nitride compound semiconductor LE.
Only the D chip can be used. Further, since the ultraviolet curable resin cures quickly, it is possible to prevent the displacement of the chip from occurring during die bonding.
【００１３】さらに、窒化ガリウム系化合物半導体ＬＥ
Ｄはサファイアという絶縁性基板を用いており接着剤が
導電性である必要がないので、多くの紫外線硬化樹脂を
選択できるという利点を有する。Further, gallium nitride-based compound semiconductor LE
Since D uses an insulating substrate called sapphire and the adhesive does not need to be conductive, it has an advantage that many ultraviolet curable resins can be selected.
【００１４】[0014]
【実施例】２インチφのサファイア基板上に少なくとも
ｎ型とｐ型の窒化ガリウム系化合物半導体層が積層さ
れ、その半導体層の同一面側に正電極と負電極とが形成
されたウェーハを用意する。そのウェーハのサファイア
基板面を粘着フィルムに貼付した後、５００μｍ角のＬ
ＥＤチップに細断する。細断後、ウェーハを粘着フィル
ムごとダイボンダーの所定のテーブル位置にセットす
る。EXAMPLE A wafer is prepared in which at least n-type and p-type gallium nitride compound semiconductor layers are stacked on a 2-inch φ sapphire substrate, and a positive electrode and a negative electrode are formed on the same surface side of the semiconductor layers. To do. After sticking the sapphire substrate surface of the wafer to an adhesive film, L of 500 μm square
Shred into ED chips. After shredding, the wafer together with the adhesive film is set at a predetermined table position on the die bonder.
【００１５】一方、底部径１ｍｍφのカップを有するリ
ードフレームを用意し、このリードフレームを同じくダ
イボンダーの所定の位置にセットする。またリードフレ
ームのカップ内に接着剤を注入するため、ダイボンダー
に付随しているディスペンサ内には、エポキシ系の紫外
線硬化型樹脂を充填する。なお、この樹脂には３６５ｎ
ｍ波長、４０Ｗ／cm2の紫外線照射条件で１分以内に硬
化する性質を有しているものを使用した。On the other hand, a lead frame having a cup with a bottom diameter of 1 mmφ is prepared, and this lead frame is similarly set at a predetermined position of the die bonder. Further, since the adhesive is injected into the cup of the lead frame, the dispenser attached to the die bonder is filled with an epoxy ultraviolet curing resin. Note that this resin has 365n
A material having a property of being cured within 1 minute under an ultraviolet irradiation condition of m wavelength and 40 W / cm 2 was used.
【００１６】次にダイボンダーを作動させ、ＬＥＤチッ
プをリードフレームのカップ内にダイボンドする。ダイ
ボンド後、ＬＥＤチップが載置されたリードフレームを
ダイボンダーから取り外し、別に設けられた高圧水銀ラ
ンプ室内に移送し、光出力５０Ｗ／cm2、波長３６５ｎ
ｍでチップ上方から６０秒間照射し、接着剤を硬化させ
る。Next, the die bonder is operated to die bond the LED chip into the cup of the lead frame. After die-bonding, the lead frame on which the LED chip was mounted was removed from the die bonder and transferred into a separately provided high-pressure mercury lamp chamber, light output 50 W / cm 2 , wavelength 365 n.
The adhesive is cured by irradiating the chip from above the chip for 60 seconds.
【００１７】以上のようにして、２インチφのウェーハ
から１万５千個のダイボンドされたＬＥＤチップを得た
後、窒化ガリウム系化合物半導体層に形成された正、負
両方の電極に、ワイヤーボンダーを用いてワイヤーボン
ディングしたところ、ワイヤーボンダーの電極認識不良
により、ワイヤーボンディングされなかったものは、わ
ずか１個であった。As described above, after obtaining 15,000 die-bonded LED chips from a 2-inch diameter wafer, wires were applied to both the positive and negative electrodes formed on the gallium nitride compound semiconductor layer. When wire bonding was performed using a bonder, only one was not wire-bonded due to poor electrode recognition of the wire bonder.
【００１８】［比較例］実施例１においてディスペンサ
ーに、従来の１２０℃、１時間で硬化する熱硬化性樹脂
を充填する他は同様にして、１万５千個のＬＥＤチップ
をリードフレームのカップ内にダイボンドする。ダイボ
ンド後、熱硬化性樹脂を硬化させるため、ＬＥＤチップ
が載置されたリードフレームを１２０℃のオーブンで１
時間加熱する。その後、同様にして電極にワイヤーボン
ドしたところ、２０個が電極認識不良によりワイヤボン
ディングされていなかった。[Comparative Example] In the same manner as in Example 1 except that the dispenser was filled with the conventional thermosetting resin that cures at 120 ° C. for 1 hour, 15,000 LED chips were formed in the lead frame cup. Die bond inside. After die bonding, in order to cure the thermosetting resin, the lead frame on which the LED chip is mounted is placed in an oven at 120 ° C for 1 hour.
Heat for hours. After that, when wire-bonding was similarly performed on the electrodes, 20 pieces were not wire-bonded due to defective electrode recognition.
【００１９】[0019]
【発明の効果】以上説明したように、本発明の方法によ
ると、ＬＥＤチップが迅速にリードフレームにダイボン
ドできるので、ＬＥＤチップが所定の位置からずれるこ
とがない。従ってダイボンド後に実施されるワイヤーボ
ンド工程、樹脂モールドによるＬＥＤチップの封止工程
等においても、正確にチップがダイボンドされているの
で歩留が向上する。またダイボンド工程においても、接
着剤の硬化時間を短縮できる。As described above, according to the method of the present invention, the LED chip can be quickly die-bonded to the lead frame, so that the LED chip is not displaced from the predetermined position. Therefore, even in the wire bonding process performed after die bonding, the LED chip sealing process by resin molding, and the like, the chips are accurately die bonded, so that the yield is improved. Further, also in the die bonding process, the curing time of the adhesive can be shortened.
【図面の簡単な説明】[Brief description of drawings]
【図１】 窒化ガリウム系化合物半導体チップがリード
フレームにダイボンドされたＬＥＤの構造を示す模式断
面図。FIG. 1 is a schematic cross-sectional view showing the structure of an LED in which a gallium nitride compound semiconductor chip is die-bonded to a lead frame.
１・・・・・サファイア基板 ２・・・・・窒化ガリウム系化合物半導体層 ３・・・・・ＬＥＤチップ ４・・・・・接着剤 １０・・・・・リードフレーム 1-Sapphire substrate 2--Gallium nitride compound semiconductor layer 3--LED chip 4--Adhesive 10-Lead frame
Claims (2)
合物半導体層が積層されてなるＬＥＤチップをリードフ
レームに接着剤を介してダイボンドする方法において、
前記接着剤に、紫外線照射により硬化する樹脂を使用す
ることを特徴とするＬＥＤチップのリードフレームへの
ダイボンド方法。1. A method of die-bonding an LED chip having a gallium nitride compound semiconductor layer laminated on a sapphire substrate surface to a lead frame via an adhesive,
A method of die-bonding an LED chip to a lead frame, characterized in that a resin that is cured by ultraviolet irradiation is used as the adhesive.
請求項１に記載のＬＥＤチップのリードフレームへのダ
イボンド方法。2. The method of die-bonding an LED chip to a lead frame according to claim 1, wherein the resin is transparent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022672A JP2947047B2 (en) | 1994-02-21 | 1994-02-21 | Die bonding method of LED chip to lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022672A JP2947047B2 (en) | 1994-02-21 | 1994-02-21 | Die bonding method of LED chip to lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07235558A true JPH07235558A (en) | 1995-09-05 |
| JP2947047B2 JP2947047B2 (en) | 1999-09-13 |
Family
ID=12089351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6022672A Expired - Fee Related JP2947047B2 (en) | 1994-02-21 | 1994-02-21 | Die bonding method of LED chip to lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2947047B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310364B1 (en) | 1998-08-03 | 2001-10-30 | Toyoda Gosei Co., Ltd. | Light-emitting apparatus |
| JP2002184911A (en) * | 2000-12-15 | 2002-06-28 | Nippon Inter Electronics Corp | Resin sealed electronic component |
| JP2008544532A (en) * | 2005-06-24 | 2008-12-04 | ミュールバウアー アーゲー | Method and apparatus for permanent connection of an integrated circuit to a substrate |
| JP2010103149A (en) * | 2008-10-21 | 2010-05-06 | Showa Denko Kk | Light emitting member, light emitting device, electronic device, mechanical device, method of manufacturing the light emitting member, and method of manufacturing the light emitting device |
| JP2015185661A (en) * | 2014-03-24 | 2015-10-22 | スタンレー電気株式会社 | semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JP4882476B2 (en) * | 2006-04-17 | 2012-02-22 | 日亜化学工業株式会社 | Semiconductor device and manufacturing method thereof |
-
1994
- 1994-02-21 JP JP6022672A patent/JP2947047B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310364B1 (en) | 1998-08-03 | 2001-10-30 | Toyoda Gosei Co., Ltd. | Light-emitting apparatus |
| JP2002184911A (en) * | 2000-12-15 | 2002-06-28 | Nippon Inter Electronics Corp | Resin sealed electronic component |
| JP2008544532A (en) * | 2005-06-24 | 2008-12-04 | ミュールバウアー アーゲー | Method and apparatus for permanent connection of an integrated circuit to a substrate |
| JP2010103149A (en) * | 2008-10-21 | 2010-05-06 | Showa Denko Kk | Light emitting member, light emitting device, electronic device, mechanical device, method of manufacturing the light emitting member, and method of manufacturing the light emitting device |
| JP2015185661A (en) * | 2014-03-24 | 2015-10-22 | スタンレー電気株式会社 | semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2947047B2 (en) | 1999-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5580246B2 (en) | Method for manufacturing light emitting device using light emitting diode | |
| US8247263B2 (en) | Method for producing an optical, radiation-emitting component and optical, radiation-emitting component | |
| US7795052B2 (en) | Chip coated light emitting diode package and manufacturing method thereof | |
| JP2016115729A (en) | Method of manufacturing light-emitting device | |
| US20090321758A1 (en) | Led with improved external light extraction efficiency | |
| US20110049545A1 (en) | Led package with phosphor plate and reflective substrate | |
| CN104885237B (en) | Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device | |
| US7223620B2 (en) | Process for the production of light-emitting diode light sources with a luminescence conversion element | |
| KR100963743B1 (en) | Light emitting diode including wavelength conversion material layer and method for fabricating the same | |
| US20090065791A1 (en) | White light led with multiple encapsulation layers | |
| JP2012533186A (en) | Reflective substrate for LED | |
| KR20040075738A (en) | Light emitting apparatus | |
| US20110207253A1 (en) | Flip-chip led module fabrication method | |
| TWI685131B (en) | Light emitting diode device and manufacturing method thereof | |
| WO2014203793A1 (en) | Light emitting device, sealing film laminate for producing same, and method for manufacturing light emitting device | |
| US10141479B1 (en) | Light-emitting package structure provided with predetermined view angle | |
| JP2947047B2 (en) | Die bonding method of LED chip to lead frame | |
| JP2007067183A (en) | Led package with compound semiconductor light emitting device | |
| JP3608496B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| JP2019201089A (en) | Oblique angle chip reflector of chip scale packaging light emission device and manufacturing method of the same | |
| JP5428122B2 (en) | Resin molded product and molding method thereof, and light emitting device and manufacturing method thereof | |
| JP3783212B2 (en) | Manufacturing method of chip type LED lamp | |
| CN208315595U (en) | The encapsulating structure of CSP LED | |
| US11824143B2 (en) | Optoelectronic component, method for producing an optoelectronic component and lighting device | |
| JPH0878727A (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |