JPH07235473A - Liquid supply method, rotary liquid supply unit and rotary resist developer - Google Patents

Abstract

PURPOSE:To form a resist pattern with higher dimensional accuracy on the surface of a semiconductor water to be processed. CONSTITUTION:The rotary resist developer is provided with a proximate plate 2 and the capillary phenomenon of processing liquid is induced in the gap between the proximate plate 2 and a semiconductor wafer 6 when the processing liquid is fed to a resist film 6a in order to shorten the spreading time of the processing liquid on the resist film 6a thus thus smoothing the development. The proximate plate 2 is provided, in a region corresponding to the peripheral part of the semiconductor wafer 6, with a deceleration groove 2a1 in order to prevent adhesion of the processing liquid other than the surface to be processed. Only one nozzle 1 is employed and dedicated supply pipes are provided sequentially from the side close to the nozzle 1 while being coupled with a common supply pipe 7. Furthermore, means for feeding drying gas into the common supply pipe 7 and the nozzle 1 after supply of rinse liquid is provided in order to prevent dropping of the processing liquid onto the resist film 6 when the processing liquid is not supplied.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for supplying a liquid to a surface to be processed of an object to be processed, and more particularly to a technology to supply a liquid to a surface to be processed of a semiconductor wafer in a semiconductor manufacturing process. The present invention relates to a technique effectively applied to a technique for developing the resist film formed on the substrate.

[0002]

2. Description of the Related Art A semiconductor device is manufactured by coating a surface of a semiconductor wafer with a photosensitizer to form a resist film, and the resist film is exposed through an exposure mask or directly to an ultraviolet ray, a laser beam or an electron beam. A desired latent image is formed on the resist film by exposing it to an exposure medium such as a line or an ion beam, and a developing solution and a rinsing solution are sequentially supplied to the resist film at a certain time to form a photosensitive area or a non-exposed area. There is a step of selectively removing and forming a resist pattern. In addition, if necessary, there is a step of adhering several semiconductor wafers to a polishing plate made of ceramic or the like with an adhesive to polish the semiconductor wafers with good flatness. In these semiconductor manufacturing processes, a rotary liquid supply device is used when supplying a liquid such as a photosensitizer, a developer, a rinse liquid, and an adhesive to a semiconductor wafer. For example, in the step of developing the resist film on the semiconductor wafer after the exposure, a rotary resist developing treatment device which is an example of the rotary liquid supply device is used.

An example of development using a conventional rotary resist development processing apparatus will be described below. First, a semiconductor wafer is prepared by exposing a resist film formed on the surface to be processed to an exposure process, and the semiconductor wafer is fixed to a fixed rotary table so that the resist film faces the ejection port of the nozzle to be integrated. . Next, while rotating the integrated semiconductor wafer in a horizontal plane by a rotating machine, the developing solution is discharged from the discharge port of the nozzle located above and supplied to the resist film on the semiconductor wafer. After the supply of the developing solution is completed, the semiconductor wafer is left standing for a while and the unnecessary portion of the resist film is etched. After that, while rotating the semiconductor wafer again, a rinse liquid is discharged from a discharge port of a nozzle different from the nozzle discharging the developing solution and supplied to the resist film to wash away unnecessary portions of the resist film. Finally, the semiconductor wafer is dried while rotating.

Conventionally, in the development of the resist film, for example, the seventh
49th to 5th Annual Meeting of Tokyo Ohka Seminar (1986)
As described in page 8, etc., the temperature and supply amount of the developer,
The dimensional stability of the resist pattern is achieved by controlling parameters such as development time.

[0005]

However, as a result of examining the above-mentioned prior art, the present inventor has found the following problems.

In conventional resist film development, it takes time (spreading time) from when the processing liquid (developing liquid and rinse liquid) discharged from the nozzle discharge port is spread on the resist film on the semiconductor wafer until it spreads over the resist film. However, even in the same resist film, the development time varies depending on the location and is not uniform. Therefore, there is a problem that the development becomes non-uniform and there is a limit in improving the dimensional accuracy of the resist pattern.

Further, since the inside of the supply pipe for guiding the processing liquid into the nozzle and the inside of the nozzle are wet after the processing liquid once flows, even if the processing liquid is not supplied, The treatment liquid remaining in the nozzle and in the supply pipe may be dropped on the resist film, and there is a limit in improving the dimensional accuracy of the resist pattern.

It is an object of the present invention to provide a resist development processing technique capable of forming a resist pattern having higher dimensional accuracy than the conventional one on a surface to be processed of a semiconductor wafer.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0010]

The outline of a typical one of the inventions disclosed in the present application will be briefly described as follows.

(1) In a liquid supply method for supplying a liquid to a surface to be processed of an object to be processed, when the liquid is supplied to the surface to be processed, the proximity plate is brought close to the surface to be processed. Capillary phenomenon is induced in the liquid in the gap between the surface to be treated and the surface to be treated.

(2) A fixed rotary table for fixing the object to be processed, a rotating machine for rotating the fixed rotary table, and a object to be processed when the object to be processed is fixed to the fixed rotary table. A rotary liquid supply device that has a nozzle facing the surface, and discharges liquid from the discharge port of the nozzle to supply the liquid to the surface to be processed, and disposes a proximity plate facing the surface to be processed, A means for bringing the proximity plate close to the surface to be treated is provided to such an extent that a capillary phenomenon is induced in the liquid in the gap between the proximity plate and the surface to be treated when the liquid is supplied to the surface to be treated. It is a thing.

(3) In the rotary liquid supply device according to (2) above, a deceleration recess for adjusting the speed at which the liquid spreads is provided on the surface of the proximity plate that faces the surface to be processed. It is a thing.

(4) A fixed rotary table for fixing a semiconductor wafer having a resist film subjected to a photosensitive treatment formed on a surface to be processed, a rotary machine for rotating the fixed rotary table about a vertical axis, and the resist. The semiconductor wafer has a nozzle facing the resist film when the semiconductor wafer is fixed to the fixed rotary table with the film facing upward, and a developing solution and a rinsing solution are discharged from a discharge port of the nozzle in a predetermined procedure and the fixing is performed. In a rotary resist development processing apparatus for developing the resist film by supplying it to the resist film of the semiconductor wafer fixed on a turntable, the nozzle is unified, and a developing solution, a rinsing solution, A common supply pipe for introducing a drying gas is provided so as to be connected to the nozzle, and a developer dedicated supply pipe for introducing a developer into the common supply pipe and a rinse for the common supply pipe are provided in order from the side closer to the nozzle. A dedicated supply pipe for a rinse liquid that guides a liquid, a dedicated supply pipe for a gas that guides a drying gas into the common supply pipe are connected to the common supply pipe, and the dedicated supply pipe for the developer, the dedicated supply pipe for the rinse liquid, and the gas Each of the exclusive supply pipes is provided with a supply amount control valve, and a means for flowing a drying gas into the common supply pipe and the nozzle after supplying the rinse liquid is provided.

(5) In the rotary resist development processing apparatus according to (4), a mixed solution stirring tank is provided, and a mixed solution dedicated supply for guiding the mixed solution from the mixed solution stirring tank into the common supply pipe is provided. A pipe is provided connected to the common supply pipe at a position closer to the nozzle than the dedicated rinse liquid supply pipe,
A supply amount adjusting valve is provided in the supply pipe for exclusive use of the mixed liquid, a developer introducing pipe for guiding the developer from the supply pipe for exclusive use of the developer into the mixing liquid stirring tank, and the mixture liquid stirring tank from inside of the exclusive supply pipe for rinse liquid A rinse liquid introducing pipe for guiding the rinse liquid is provided inside, and a mixed liquid concentration control valve is provided for each of the developing liquid introducing pipe and the rinse liquid introducing pipe.

[0016]

According to (1), (2), and (3) of the above-mentioned means, the processing liquid rapidly flows on the resist film in the gap between the proximity plate and the semiconductor wafer due to the capillary phenomenon when the processing liquid is supplied. Since the diffusion time from the diffusion and the treatment liquids landing on the resist film until the treatment liquid spreads over the entire resist film is shortened, the developing time is made uniform in the same resist film.
Therefore, uneven development can be mitigated, and a resist pattern having higher dimensional accuracy than before can be formed on the surface to be processed of the semiconductor wafer.

Further, according to (4) and (5) in the above-mentioned means, the inside of the nozzle and the inside of the common supply pipe are cleaned by the rinse liquid flowing after the developer or the mixed liquid is supplied, and the rinse liquid is further added. Since the drying gas flows and dries after the supply, the treatment liquid is not dropped onto the resist film except during a predetermined supply. Therefore, it is possible to form a resist pattern having higher dimensional accuracy than the conventional one on the surface to be processed of the semiconductor wafer.

[0018]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a diagram showing a structure of a developing processing unit in a rotary resist developing processing apparatus according to an embodiment of the present invention, and FIG. 2 is a drawing showing a rotary resist developing processing apparatus in the present embodiment. FIG. 2 is a schematic diagram showing the configuration of a pipe part for introducing a developing solution, a rinsing solution, a mixed solution, and a drying gas to the nozzle of the development processing section shown in FIG. 1. 1 is a nozzle, 2 is a proximity plate, and 2 a is a proximity plate 2. Processing liquid diffusion surface 2a ₁ is a deceleration groove provided on the processing liquid diffusion surface 2a of the proximity plate 2, 3 is a wafer chuck (fixed rotary table), 4 is a spin motor (rotating machine), 5 is a piston rod, Reference numeral 6 is a semiconductor wafer, 6a is a resist film formed on the surface to be processed of the semiconductor wafer 6, 7 is a common supply pipe, 8 is a mixed liquid supply pipe, 9 is a development liquid supply pipe, and 1
0 is a supply pipe for the rinse liquid, 11 is a supply pipe for the gas, and 12
Is a mixed solution stirring tank, 13 is a developing solution introduction pipe, 14 is a rinse solution introduction pipe, 15 is a pressure pipe, 16 is an atmospheric pressure release pipe,
U ₁ , U ₂ , U ₃ , U ₄ , U ₅ , and U ₆ are check valves, V ₁ is a mixed solution supply amount control valve, V ₂ is a developing solution supply amount control valve, and V ₃ is a rinse solution supply amount control valve. A valve, V ₄ is a gas supply amount control valve, V ₅ and V ₆ are mixed liquid concentration control valves, and V ₇ is a three-way valve. The developing processing apparatus of this embodiment shown in FIGS. 1 and 2 is incorporated in a developing unit of an apparatus that consistently processes from resist application to development.

As shown in FIG. 1, the development processing section of the rotary resist development processing apparatus of this embodiment includes a wafer chuck 3 for fixing a semiconductor wafer 6 and a spin motor for rotating the wafer chuck 3 about a vertical axis. 4, a nozzle 1 whose discharge port is directed downward so as to face the surface to be processed of the semiconductor wafer 6 fixed to the wafer chuck 3, a proximity plate 2 attached to the tip of the nozzle 1, and a spin motor 4 And a piston rod 5 for supporting the above from below and moving it up and down.

The characteristic of the developing processing section is that the wafer chuck 3 is moved by moving the piston rod 5 up and down.
When a processing solution (developing solution, rinsing solution, or mixed solution) is supplied to the resist film 6a of the semiconductor wafer 6 fixed on the wafer, a gap is formed between the processing solution diffusion surface 2a of the proximity plate 2 and the resist film 6a of the semiconductor wafer 6. The point is that the semiconductor wafer 6 can be brought close to the proximity plate 2 to such an extent that the capillarity is induced in a certain processing liquid.

The proximity plate 2 has a disk shape, and the circular processing liquid diffusion surface 2a facing the semiconductor wafer 6 is somewhat larger than the surface to be processed of the semiconductor wafer 6,
A through hole 2b for guiding the processing liquid discharged from the nozzle 1 to the processing liquid diffusion surface 2a side of the proximity plate 2 is provided in the center thereof.

In particular, the proximity plate 2 of this embodiment is provided with arc-shaped deceleration grooves 2a ₁ in a region of the processing liquid diffusion surface 2a corresponding to the peripheral portion of the semiconductor wafer 6. The groove 2a ₁ can reduce the speed at which the processing liquid spreads between the semiconductor wafer 6 and the proximity plate 2.

A common supply pipe 7 connected to the nozzle 1 of the developing treatment section is provided in the piping section of the rotary resist developing treatment apparatus of this embodiment. To this shared supply pipe 7, a mixed liquid dedicated supply pipe 8, a developer dedicated supply pipe 9, a rinse liquid dedicated supply pipe 10, and a gas dedicated supply pipe 11 are connected in this order from the side closer to the nozzle 1. The mixed liquid dedicated supply pipe 8 supplies the mixed liquid, the developer dedicated supply pipe 9 supplies the developer, the rinse liquid dedicated supply pipe 10 supplies the rinse liquid, and the gas dedicated supply pipe 11 supplies the drying gas. It leads into the pipe 7.

Further, a mixed solution supply amount control valve V ₁ for adjusting the supply amount of the mixed solution is provided in the mixed solution supply tube 8 and a developer is supplied to the developing solution dedicated supply tube 9. Developer supply amount control valve V ₂ , a rinse liquid supply amount control valve V _{3 for} adjusting the supply amount of the rinse liquid to the rinse liquid supply pipe 10, and a gas supply amount control to the gas supply pipe 11 Valve V ₄
Is provided for each.

One end of the mixed liquid dedicated supply pipe 8 is connected to the mixed liquid stirring tank 12. In the mixed solution stirring tank 12, a developing solution introducing pipe 13 for guiding the developing solution into the mixed solution stirring tank 12 from the dedicated developing solution supply pipe 9.
A rinsing liquid introducing pipe 14 for guiding the rinsing liquid from the rinsing liquid dedicated supply pipe 10 into the mixed liquid stirring tank 12 is connected. Mixture concentration regulating valve V _5, V ₆ Re each Re husband these inlet tubes 13 are provided, mixture stirred by adjusting the opening and closing of the mixture concentration regulating valve V _5, V ₆ A mixed solution having an arbitrary concentration can be prepared in the tank 12. Further, one end of the three-way valve V ₇ is connected to the mixed liquid stirring tank 12 via a conduit. A pressurizing pipe 15 and an atmospheric pressure open pipe 16 are connected to the remaining two connecting ends of the three-way valve V ₇ , and the pressure in the mixed liquid stirring tank 12 can be adjusted by adjusting the opening and closing of the three-way valve V _7. It is like this. That is, the pressure of the liquid mixture stirred tank 12 is higher when opening the three-way valve V ₇ to pressure tube 15 side, it becomes lower when opening the three-way valve V ₇ back to atmospheric pressure relief tube 16 side. In this way, by controlling the opening / closing of the three-way valve V ₇ to adjust the pressure in the mixed solution stirring tank 12, the introduction pipe 1
It is possible to suck the developing solution and the rinsing solution into the mixed solution stirring tank 12 from inside 3 and 14, and to send the mixed solution in the mixed solution stirring tank 12 into the mixed solution dedicated supply pipe 8. There is.

The valves V ₁ , V ₂ , V ₃ , V ₄ , V ₅ , V ₆ , V
₇ is opened and closed by the CPU ( C e
It is controlled by ntral P rocessing U nit). That is, the CPU opens and closes the valves according to the opening time of each valve that is defined and stored corresponding to the predetermined supply amount of each processing liquid and the drying gas. Further, the CPU stores data relating to the predetermined supply amount which has been experimentally determined in advance, and when various conditions such as the thickness of the resist film 6a, the concentration and temperature of the processing liquid are input, these conditions are stored. The predetermined supply amount is determined by comparing and collating with the above data.

Further, in the shared supply pipe 7, a position farther from the nozzle 1 than the mixed liquid dedicated supply pipe 8 and closer to the nozzle 1 than the developer dedicated supply pipe 9, and in the shared supply pipe 7 the developer dedicated supply pipe 9 A position farther from the nozzle 1 and closer to the nozzle 1 than the supply pipe 10 dedicated to the rinse liquid, the common supply pipe 7
A position farther from the nozzle 1 than the rinse liquid dedicated supply pipe 10, and the mixed liquid supply amount control valve V in the mixed liquid dedicated supply pipe 8.
_A position closer to the nozzle ₁ than 1; a position closer to the nozzle ₁ than the developer supply amount control valve V _{2 in the} developer supply pipe 9; a rinse liquid supply amount control valve V _{3 in the} rinse liquid supply pipe 10 Check valve U ₁ , at a position closer to nozzle 1 in order.
U ₂ , U ₃ , U ₄ , U ₅ , and U ₆ are provided. These check valves prevent the fluid in each supply pipe from flowing backward in the direction away from the nozzle 1.

Although not shown in the drawing, the supply pipe 9 for exclusive use of the developer is supplied to the developer supply tank containing the developer, and the supply pipe 10 for exclusive use of the rinse liquid is supplied to the rinse liquid supply tank containing the rinse liquid, and is supplied exclusively to the gas. One end of each of the pipes 11 is connected to a gas supply tank containing a drying gas. Then, in these supply tanks, the developer, rinse solution, and
A filter is provided for cleaning the drying gas.

The developing method using the rotary resist developing apparatus of this embodiment will be described below.

First, the resist film 6 which has been subjected to a photosensitive treatment
The semiconductor wafer 6 on which a is formed is prepared, and the resist film 6
The semiconductor wafer 6 is sucked and fixed to the wafer chuck 3 so that the side a faces the proximity plate 2. Then, the semiconductor wafer 6
Is brought close to the proximity plate 2 to leave a gap of about 1 mm (preferably in the range of 0.3 to 2 mm) between the resist film 6a and the processing liquid diffusion surface 2a.

Next, the developer supply amount control valve V ₂ is opened for a predetermined time to supply a predetermined amount of the developer to the resist film 6a of the semiconductor wafer 6. At this time, the developing solution is supplied from the developing solution dedicated supply tube 9 through the common supply tube 7 and the nozzle 1 to the proximity plate 2
From the opening of the processing liquid diffusion surface 2a of the resist film 6
reach a. The developing solution that has reached the resist film 6a causes a capillary phenomenon between the resist film 6a and the processing solution diffusing surface 2a and rapidly diffuses over the entire surface of the resist film 6a.
When it reaches the peripheral portion, the vehicle is decelerated by the deceleration groove 2a ₁ .

After the developing solution has spread over the entire surface of the resist film 6a, it is left standing for a predetermined time (60 seconds) for development. In the meantime, unnecessary portions of the resist film 6a (in this embodiment,
The exposed area) is etched by the impregnated developer.

When the development is completed after a predetermined time has passed,
A predetermined amount of the rinsing liquid to open the rinse liquid supply amount adjusting valve V ₃ for a predetermined time (pure water) is supplied to the resist film 6a of the semiconductor wafer 6, the 500~1000rpm spin motor 4 in order to improve the rinsing efficiency Rinse at speed. At this time, the rinse liquid supplied to the resist film 6a is rapidly diffused over the entire surface of the resist film 6a by the same capillary phenomenon as in the case of the developer, and the unnecessary portion of the resist film 6a etched by the developer is washed away. .

Immediately after the rinsing process is completed, the gas supply amount control valve V ₄ is opened for a predetermined time to supply a predetermined amount of drying gas (for example, nitrogen) to the semiconductor wafer 6, and the spin motor 4 is rotated at 2000 to 3000 rpm. Rotate at the speed of. In this way, the semiconductor wafer 6 is dried by the rotational centrifugal force of the spin motor 4 and the drying gas, and all the steps relating to the development processing of the resist film 6a are completed.

When a developing solution is diluted with a rinsing solution instead of the developing solution for development processing, first,
By opening the mixed solution concentration control valves V ₅ and V ₆ for a predetermined time and opening the mixed solution supply pressure three-way valve V ₇ to the atmospheric pressure release pipe 16 side, A predetermined amount of the rinse liquid is sucked to make a predetermined amount of the mixed liquid having a desired concentration. Next, by opening the three-way valve V ₇ to the pressurizing pipe 15 side, the mixed liquid is sent from the mixed liquid stirring tank 12 to the mixed liquid dedicated supply pipe 8, and the mixed liquid supply amount control valve V ₁ is opened for a predetermined time. Then, a predetermined amount of the mixed liquid is supplied to the resist film 6a. After that, leaving, rinsing, and drying are performed in the same procedure as described above.

As can be seen from the above description, according to the rotary resist development processing apparatus of this embodiment, the diffusion time from the landing of the processing liquid on the resist film 6a to the spreading of the entire resist film 6a is longer than that in the conventional case. It is shortened. For example, when the diameter of the semiconductor wafer 6 is 200 mm, the diffusion time is about 5 seconds in the related art, whereas it is 1 in this embodiment.
It was within seconds. Since the diffusion time is shortened in this way, the development time is made uniform in the same resist film 6a. Therefore, uneven development is alleviated, and a resist pattern having higher dimensional accuracy than conventional is formed on the surface to be processed of the semiconductor wafer 6.

In the nozzle 1 and the common supply pipe 7,
After the developer or the mixed solution is supplied, the rinse solution is used for cleaning, and after the rinse solution is supplied, it is dried by the drying gas, so that the processing solution does not remain in the nozzle 1 and the common supply pipe 7. Therefore, the processing liquid does not drip onto the resist film 6a except when it is supplied for a predetermined time, and a resist pattern having higher dimensional accuracy than the conventional one is formed on the surface to be processed of the semiconductor wafer 6.

Further, the processing liquid diffusing on the resist film 6a reaches the peripheral portion of the semiconductor wafer 6 and then the deceleration groove 2 is formed.
Since the processing liquid is decelerated by a ₁ ,
It does not adhere to surfaces other than the surface to be treated.

Although the invention made by the inventor has been specifically described based on the embodiments, the invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

In the above description, the case where the invention made by the present inventor is mainly applied to the development processing technique of the resist film in the semiconductor manufacturing process which is the field of application which is the background is explained, but the scope of application of the present invention is The present invention is not limited to this, and can be applied to a technique of supplying a liquid to at least the surface to be processed of a flat object to be processed.

[0042]

The effects obtained by the typical ones of the inventions disclosed by the present application will be briefly described as follows.

(1) In a technique of developing a resist film by supplying a treatment liquid to a resist film formed on a surface of a semiconductor wafer to be processed, uneven development caused by uneven development time in the same resist film is caused. By mitigating, a resist pattern with high dimensional accuracy can be formed on the surface to be processed of the semiconductor wafer.

(2) In the technique of developing the resist film by supplying the processing liquid to the resist film formed on the surface of the semiconductor wafer to be processed, the processing liquid is not dropped onto the resist film except when it is supplied for a predetermined time. It is possible to prevent the formation of a resist pattern having higher dimensional accuracy than the conventional one on the surface to be processed of the semiconductor wafer.

(3) In the technique of supplying a liquid to the surface to be processed of the object to be processed, it is possible to prevent the liquid from adhering to a surface other than the surface to be processed of the object to be processed.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a development processing unit of a rotary resist development processing apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of a pipe portion of a rotary resist developing processing apparatus according to an embodiment of the present invention.

[Explanation of symbols]

1 ... Nozzle, 2 ... Proximity plate, 2a ... Treatment liquid diffusion surface, 2a ₁
... deceleration groove, 2b ... through hole, 3 ... wafer chuck, 4 ...
Spin motor, 5 ... Piston rod, 6 ... Semiconductor wafer, 6a ... Resist film, 7 ... Common supply pipe, 8 ... Mixed liquid supply pipe, 9 ... Developer supply pipe, 10 ... Rinse liquid supply pipe, 11 ... Gas dedicated supply pipe, 12 ... stirring tank, 1
3 ... Developer introducing pipe, 14 ... Rinse introducing pipe, 15 ... Pressurizing pipe, 16 ... Atmospheric pressure open pipe, U ₁ , U ₂ , U ₃ , U ₄ , U ₅ ,
U ₆ ... Check valve, V ₁ ... Mixed liquid supply amount adjusting valve, V ₂ ... Developer supply amount adjusting valve, V ₃ ... Rinse liquid supplying amount adjusting valve, V ₄ ... Gas supplying amount adjusting valve, V ₅ , V ₆ ... liquid mixture concentration regulating valve, V ₇ ... three-way valve.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Hama, 3-3 Fujibashi, Ome City, Tokyo 2 3 Hitachi Hitachi Electronics Co., Ltd. Within Tokyo Electronics Co., Ltd. (72) Inventor Yoichiro Tamiya, 3-3 Fujibashi, Ome-shi, Tokyo, 2 Hitachi Hitachi Tokyo Electronics Co., Ltd. (72) Shin Shin Chimura, 3-3 Fujibashi, Ome, Tokyo 2 Inside Electronics Co., Ltd. (72) Inventor Masayoshi Kanematsu 3-3-2 Fujihashi, Ome City, Tokyo Inside Hitachi Tokyo Electronics Co., Ltd.

Claims (5)

[Claims] 1. A liquid supply method for supplying a liquid to a surface to be processed of an object to be processed, wherein when a liquid is supplied to the surface to be processed, a proximity plate is brought close to the surface to be processed and the proximity plate A liquid supply method characterized by inducing a capillary phenomenon in a liquid in a gap between the surface to be processed. 2. A fixed rotary table for fixing an object to be processed, a rotary machine for rotating the fixed rotary table, and a surface to be processed of the object to be processed when the object to be processed is fixed to the fixed rotary table. A rotary liquid supply device that discharges liquid from a discharge port of the nozzle and supplies the liquid to the surface to be processed, wherein a proximity plate is arranged so as to face the surface to be processed, A means for bringing the proximity plate close to the surface to be treated to such an extent that a capillary action is induced in the liquid in the gap between the proximity plate and the surface to be treated when the liquid is supplied to the surface to be treated. Characteristic rotary liquid supply device. 3. The rotary liquid supply device according to claim 2, wherein a surface of the proximity plate facing the surface to be processed is provided with a deceleration recess for adjusting the speed at which the liquid spreads. 4. A fixed turntable for fixing a semiconductor wafer on which a resist film subjected to a photosensitive treatment is formed on a surface to be treated,
A rotating machine that rotates the fixed rotary table about a vertical axis,
It has a nozzle facing the resist film when the semiconductor wafer is fixed to the fixed rotary table with the resist film facing upward, and the developing solution and the rinsing solution are discharged from a discharge port of the nozzle in a predetermined procedure. In a rotary resist development processing apparatus for developing the resist film by supplying it to the resist film of the semiconductor wafer fixed to the fixed turntable, the nozzle is unified, and a developing solution / rinse is provided in the nozzle. A common supply pipe for introducing a liquid / drying gas is provided so as to be connected to the nozzle, and a developer dedicated supply pipe for guiding the developer into the common supply pipe and a rinse liquid in the common supply pipe are provided in order from the side closer to the nozzle. A dedicated supply pipe for the rinse liquid, a dedicated supply pipe for the gas for guiding the drying gas into the common supply pipe are provided in connection with the common supply pipe, and the dedicated supply pipe for the developer, the dedicated supply pipe for the rinse liquid, the gas A rotation type resist developing apparatus characterized in that a supply amount control valve is provided in each of the body dedicated supply pipes, and a means for flowing a drying gas is provided in the common supply pipe and the nozzle after the rinse liquid is supplied. . 5. A mixed solution stirring tank is provided, and the mixed solution dedicated supply pipe for guiding the mixed solution from the mixed solution stirred tank into the shared supply pipe is located at a position closer to the nozzle than the rinse liquid dedicated supply pipe. A developer supply pipe for introducing a developer from the supply pipe dedicated to the developing solution into the mixture solution stirring tank, and a rinse liquid dedicated to the rinse liquid. A rinse liquid introducing pipe for guiding a rinse liquid from a supply pipe into the mixed liquid stirring tank is provided, and a mixed liquid concentration control valve is provided for each of the developer introducing pipe and the rinse liquid introducing pipe. The rotary resist development processing apparatus according to claim 4.