JPH07235458A - Aluminum foil for forming electrode of electrolytic capacitor and etching method therefor - Google Patents
Aluminum foil for forming electrode of electrolytic capacitor and etching method thereforInfo
- Publication number
- JPH07235458A JPH07235458A JP10016594A JP10016594A JPH07235458A JP H07235458 A JPH07235458 A JP H07235458A JP 10016594 A JP10016594 A JP 10016594A JP 10016594 A JP10016594 A JP 10016594A JP H07235458 A JPH07235458 A JP H07235458A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- foil
- aluminum foil
- electrolytic capacitor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、電解コンデンサ電極
用アルミニウム箔及び該箔のエッチング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum foil for electrolytic capacitor electrodes and a method for etching the foil.
【0002】[0002]
【従来の技術及び解決しようとする課題】アルミニウム
電解コンデンサ用電極材として一般に用いられるAl箔
には、その実効面積を拡大して単位面積当たりの静電容
量を増大するため、通常、電気化学的あるいは化学的エ
ッチング処理が施される。2. Description of the Related Art Al foil, which is generally used as an electrode material for aluminum electrolytic capacitors, usually has an electrochemical area because its effective area is enlarged to increase the capacitance per unit area. Alternatively, a chemical etching process is performed.
【0003】しかし、箔を単にエッチング処理するのみ
では十分な静電容量が得られない。このため、一般的に
は箔圧延後の最終焼鈍工程において、立方体方位を多く
有する集合組織にして箔のエッチング特性を向上させる
べく、450℃程度以上の高温加熱処理が施されている
が、昨今の電解コンデンサの高静電容量化の要求に対し
て十分な満足を得るものではなかった。However, a sufficient capacitance cannot be obtained by simply etching the foil. Therefore, generally, in the final annealing step after foil rolling, a high-temperature heat treatment of about 450 ° C. or more is performed in order to improve the etching characteristics of the foil by forming a texture having many cubic orientations, but recently It was not possible to obtain sufficient satisfaction for the requirement for high capacitance of the electrolytic capacitor.
【0004】この発明は、かかる技術的背景に鑑みてな
されたものであって、静電容量を増大し得る電解コンデ
ンサ電極用アルミニウム箔及び該箔のエッチング方法の
提供を目的とする。The present invention has been made in view of the above technical background, and an object thereof is to provide an aluminum foil for electrolytic capacitor electrodes capable of increasing electrostatic capacitance and a method for etching the foil.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するため
に、発明者は鋭意研究の結果、立方体方位占有率の高い
アルミニウム箔にMgの表面濃化層を設けることで、エ
ッチングピット密度を上げ、高静電容量箔が得られるこ
とを見出した。In order to achieve the above object, as a result of intensive research, the inventor has found that a surface concentrated layer of Mg is provided on an aluminum foil having a high cubic orientation occupancy to increase the etching pit density. , And found that a high capacitance foil can be obtained.
【0006】この発明は、かかる知見に基いてなされた
ものであって、その1つは、アルミニウム純度99.9
%以上で、表面から厚さ1μmを除く芯部の立方体方位
占有率が90%以上であり、かつ箔の少なくとも片面に
おいて表面から厚さ1μmの表層部のMg濃度が200
〜2000ppmであることを特徴とする電解コンデン
サ電極用アルミニウム箔を要旨とする。The present invention has been made on the basis of such findings, one of which is aluminum purity 99.9.
%, The core orientation excluding the thickness of 1 μm from the surface is 90% or more, and the Mg concentration of the surface layer portion having a thickness of 1 μm from the surface is 200 at least on one side of the foil.
The gist is an aluminum foil for electrolytic capacitor electrodes, which is characterized in that the content is ˜2000 ppm.
【0007】また、他の1つは上記アルミニウム箔を、
HCl(塩酸):3〜10%、H2SO4 (硫酸):1
0〜40%を含む水溶液中で、液温:70〜90℃、電
流密度:10〜40A/dm2 の条件にて一次の電解エ
ッチングを実施した後、HCl:3〜10%あるいはさ
らにH2 C2 O4 (しゅう酸):1%以下を含む水溶液
中で、液温:70〜95℃、電流密度:0〜10A/d
m2 の条件にて、二次の電解エッチングまたは化学エッ
チングを実施することを特徴とする電解コンデンサ電極
用アルミニウム箔のエッチング方法を要旨とする。The other one is the above aluminum foil,
HCl (hydrochloric acid): 3 to 10%, H 2 SO 4 (sulfuric acid): 1
After carrying out primary electrolytic etching in an aqueous solution containing 0 to 40% under the conditions of liquid temperature: 70 to 90 ° C. and current density: 10 to 40 A / dm 2 , HCl: 3 to 10% or further H 2 C 2 O 4 (oxalic acid): in an aqueous solution containing 1% or less, liquid temperature: 70 to 95 ° C., current density: 0 to 10 A / d
A gist of the method for etching an aluminum foil for an electrolytic capacitor electrode is that secondary electrolytic etching or chemical etching is performed under the condition of m 2 .
【0008】この発明に係るアルミニウム箔のアルミニ
ウム純度に99.9%以上を必要とするのは、99.9
%未満の純度では、エッチング時にエッチングピットの
成長が多くの不純物の存在によって阻害され、本発明範
囲のMg濃化層の形成によってもなお均一な深いトンネ
ル状のエッチングピットを形成できず、従って静電容量
の高いアルミニウム箔を得ることができないからであ
る。好ましくはアルミニウム純度を99.98%以上と
するのが良い。The aluminum foil of the present invention requires an aluminum purity of 99.9% or higher because it is 99.9.
If the purity is less than%, the growth of etching pits is hindered by the presence of many impurities during etching, and even the formation of the Mg-concentrated layer within the scope of the present invention fails to form uniform deep tunnel-shaped etching pits. This is because an aluminum foil having a high electric capacity cannot be obtained. It is preferable that the aluminum purity is 99.98% or more.
【0009】表面から厚さ1μmを除く芯部の立方体方
位占有率が90%以上に規定されるのは、かかる範囲の
立方体方位占有率とMgの表面濃化層との組み合わせに
より、高静電容量が可能となるからであり、立方体方位
占有率が90%未満では、静電容量を増大することがで
きない。The cubic orientation occupancy of the core excluding the thickness of 1 μm from the surface is defined to be 90% or more because the combination of the cubic orientation occupancy in this range and the surface enriched layer of Mg results in high electrostatic capacity. This is because the capacity becomes possible, and if the cubic azimuth occupancy rate is less than 90%, the electrostatic capacity cannot be increased.
【0010】アルミニウム箔表層部のMgは、エッチン
グ時に均一に分散したピットを得るために必要な元素で
ある。即ち、一般にエッチング初期には箔表面に存在す
る表面の凹凸や油、ロールコーティングなどの付着物、
あるいはそれらが変質したものから発生する不均一な局
部溶解ピットが発生し、エッチングピット密度の不均一
性(疎・密)を生じ、著しい場合には表面がクレーター
状に溶解する。この不均一性はエッチング終了後も残
り、静電容量低下の原因となっている。そこで、このよ
うな不具合点を防止するために、これら表面に存在する
エッチングピットの不均一要因を制御する試みが行われ
ているが、発明者は、この点について鋭意研究の結果、
Mgの表面濃化層を有するアルミニウム箔がエッチング
ピットの局部性をなくす効果を有することを知見した。
即ち、Mgの表面濃化層があると、エッチング初期に圧
延面内において圧延方向及び圧延方向と直角な方向に
(100)方向に沿った浅い溝が生じ表面溶解をおこ
す。次に、この溝の凹みの一部から圧延面に垂直にエッ
チングピットが成長する。エッチング初期にこのような
溝状の表面溶解が生じることにより、箔表面に存在する
表面の凹凸や油、ロールコーティングなどの付着物、あ
るいはそれらが変質したものが除去され、エッチング初
期から均一に分散したエッチングピットが発生するので
ある。このような効果を得るために、Mg濃度は表面か
ら厚さ1μmの表層部において200ppm以上必要で
あるが、2000ppmを越えると濃度が高すぎて著し
い表面溶解が起こり、箔の総厚が減少するため高静電容
量箔を得ることができない。そこで、Mg量の表面濃化
量範囲は、表面から厚さ1μmの表層部で200〜20
00ppmとする必要がある。特に好ましくは500〜
1000ppmとするのが良い。Mg in the surface layer of the aluminum foil is an element necessary for obtaining pits uniformly dispersed during etching. That is, generally in the initial stage of etching the surface irregularities and oils present on the foil surface, deposits such as roll coating,
Alternatively, non-uniform local dissolution pits are generated from those that have been altered, resulting in non-uniformity (dense / dense) in the etching pit density, and in the remarkable case, the surface is melted like craters. This non-uniformity remains even after the etching is completed, which causes a decrease in capacitance. Therefore, in order to prevent such inconveniences, attempts have been made to control the non-uniformity factor of the etching pits existing on these surfaces, but the inventor has conducted extensive research on this point,
It was found that the aluminum foil having the surface concentrated layer of Mg has the effect of eliminating the locality of etching pits.
That is, if the Mg surface concentrated layer is present, shallow grooves along the (100) direction in the rolling direction and in the direction perpendicular to the rolling direction occur in the rolling surface at the initial stage of etching to cause surface melting. Next, an etching pit grows perpendicularly to the rolling surface from a part of the recess of the groove. Such groove-like surface dissolution occurs at the initial stage of etching, so that surface irregularities on the foil surface, oil, deposits such as roll coating, or those that have deteriorated are removed, and evenly dispersed from the initial stage of etching. The etching pits are generated. In order to obtain such an effect, the Mg concentration needs to be 200 ppm or more in the surface layer portion having a thickness of 1 μm from the surface, but if it exceeds 2000 ppm, the concentration is too high and remarkable surface dissolution occurs, and the total foil thickness decreases. Therefore, a high capacitance foil cannot be obtained. Therefore, the surface concentration range of the amount of Mg is 200 to 20 in the surface layer portion having a thickness of 1 μm from the surface.
It is necessary to set it to 00 ppm. Particularly preferably 500-
It is good to set it to 1000 ppm.
【0011】また、上記のMg濃化層は、箔の少なくと
も片面に存在すれば良い。もちろん両面に存在していて
も良い。また、表面から厚さ1μmの表層部を除く芯部
のMg濃度は1ppm未満とするのが良い。1ppmを
越えると、箔表層部にMg濃化層を形成した効果が減殺
され、箔内部でエッチングピットが連通して十分な拡面
率が得られない恐れがある。The Mg concentrated layer may be present on at least one side of the foil. Of course, it may exist on both sides. Further, the Mg concentration of the core portion excluding the surface layer portion having a thickness of 1 μm from the surface is preferably less than 1 ppm. If it exceeds 1 ppm, the effect of forming the Mg concentrated layer on the surface layer of the foil is diminished, and the etching pits may communicate with each other inside the foil, so that a sufficient surface expansion ratio may not be obtained.
【0012】上記の如く表層部にMgを高濃度に含有す
るアルミニウム箔の製造は、特に規定されることはない
が、例えば、アルミニウム地金を好ましくはMg量2p
pm未満(さらに好ましくは1ppm未満)のものとし
て溶解、鋳造する一方、別のアルミニウム地金の溶解時
にMg量200〜2000ppmを添加して鋳造し、こ
れら両アルミニウム地金を圧延により所定厚みとなるよ
うにクラッドすれば良い。また、Mgを含まないアルミ
ニウム箔の表面に、別途Mgをイオンスパッタリング等
の方法で適宜厚みの皮膜として付与したのち、熱処理を
行ってMgを表層部に拡散せしめるものとしても良い。The production of the aluminum foil containing a high concentration of Mg in the surface layer as described above is not particularly limited, but for example, an aluminum ingot is preferably used with a Mg content of 2 p.
While melting and casting as less than pm (more preferably less than 1 ppm), when another aluminum ingot is melted, a Mg amount of 200 to 2000 ppm is added for casting, and both aluminum ingots are rolled to a predetermined thickness. Just clad like this. Alternatively, Mg may be separately applied to the surface of the aluminum foil not containing Mg as a film having a proper thickness by a method such as ion sputtering, and then heat treatment may be performed to diffuse the Mg to the surface layer portion.
【0013】上記アルミニウム箔は、これをエッチング
処理して電解コンデンサ電極材とする。エッチングの条
件は特に限定されることはないが、好ましくは本発明に
従うエッチング方法を適用するのが良い。The aluminum foil is subjected to an etching treatment to be used as an electrode material for electrolytic capacitors. The etching conditions are not particularly limited, but the etching method according to the present invention is preferably applied.
【0014】このエッチング方法は2段の処理からな
り、一次エッチングはHCl+H2 SO4 系の電解液を
用いて実施するものであるが、発明者は、一次エッチン
グ時のH2 SO4 濃度を適当な範囲に設定することで表
面溶解量を適度に抑制し、エッチングピット分布の均一
分散性のみを高められることを見出した。即ち、HCl
+H2 SO4 系の液組成において、H2 SO4 濃度が1
0%未満ではMg濃化層による表面溶解量が大きいため
十分な高静電容量箔が得られず、またH2 SO4濃度が
40%を越えるとエッチングピット密度が高くなり過ぎ
部分的なエッチングピットの結合が生じて静電容量は低
下する。従って、一次エッチング処理において、H2 S
O4 濃度は10〜40%とする。特に望ましくは20〜
35%である。この時、他の一次エッチング条件は化成
処理後に十分な表面積が得られるだけのエッチングピッ
ト密度、径、ピット長さを確保するためにHCl濃度:
3〜10%、液温:70〜90℃、直流電流密度:10
〜40A/dm2 の範囲とする。This etching method comprises two steps of treatment, and the primary etching is carried out by using an electrolyte solution of HCl + H 2 SO 4 system, but the inventor of the present invention selects an appropriate H 2 SO 4 concentration during the primary etching. It has been found that the surface dissolution amount can be appropriately suppressed and the uniform dispersibility of the etching pit distribution can be enhanced by setting the range to a certain range. That is, HCl
In the liquid composition of + H 2 SO 4 system, the H 2 SO 4 concentration is 1
If it is less than 0%, a sufficiently high capacitance foil cannot be obtained because the amount of surface dissolution due to the Mg concentrated layer is large, and if the H 2 SO 4 concentration exceeds 40%, the etching pit density becomes too high and partial etching occurs. The pits are combined to reduce the capacitance. Therefore, in the primary etching process, H 2 S
The O 4 concentration is 10 to 40%. Particularly preferably 20 to
35%. At this time, other primary etching conditions are as follows: HCl concentration in order to secure the etching pit density, diameter, and pit length sufficient to obtain a sufficient surface area after chemical conversion treatment:
3 to 10%, liquid temperature: 70 to 90 ° C, direct current density: 10
To 40 A / dm 2 .
【0015】一次エッチングに引き続いて、エッチング
ピット径を拡げる目的で、二次エッチングを行う。処理
液は、HCl濃度:3〜10%の塩酸水溶液を基本とす
るが、濃度1%以下のH2 C2 O4 を混合しても良い。
また、液温は70〜95℃とし、電流の通電を伴わない
化学エッチングでもよいし、直流電流密度10A/dm
2 以下の電解エッチングでも良い。二次電解処理におけ
る上記処理条件を逸脱する場合は、いずれもエッチング
ピット径の拡大効果に不十分となる。Subsequent to the primary etching, secondary etching is performed for the purpose of expanding the etching pit diameter. The treatment liquid is basically an aqueous hydrochloric acid solution having an HCl concentration of 3 to 10%, but H 2 C 2 O 4 having a concentration of 1% or less may be mixed.
Further, the liquid temperature may be 70 to 95 ° C., and chemical etching without energization of current may be used, or direct current density may be 10 A / dm.
Electrolytic etching of 2 or less may be used. If any of the processing conditions in the secondary electrolysis processing is deviated, the effect of enlarging the diameter of the etching pit is insufficient.
【0016】このような一次エッチング及び二次エッチ
ングにより、従来法よりも静電容量の高いAl箔を得る
ことが可能となる。By such primary etching and secondary etching, it becomes possible to obtain an Al foil having a higher capacitance than the conventional method.
【0017】[0017]
【作用】箔表層部のMg濃化層がエッチングの際に箔表
面のエッチングピットの局部性をなくし均一生成を促
す。このようなMg濃化層の作用は、箔芯部のMg濃度
が1ppm未満のとき、より効果的に発揮される。The Mg concentrated layer on the surface layer of the foil eliminates the locality of the etching pits on the surface of the foil during etching and promotes uniform formation. Such an action of the Mg concentrated layer is more effectively exhibited when the Mg concentration of the foil core is less than 1 ppm.
【0018】また、一次エッチング処理によりエッチン
グピットが適度に分散され、二次エッチングにより孔径
が拡大し、拡面率が増大する。Also, the etching pits are appropriately dispersed by the primary etching treatment, and the hole diameter is enlarged by the secondary etching to increase the surface expansion rate.
【0019】[0019]
(実施例1)表1に示す各種組成のアルミニウム鋳塊を
面削後に、熱間圧延で表2に示す構成となるようにクラ
ッド圧延したのち、冷間圧延(中間焼鈍を含む)した。
そして、不活性ガス雰囲気中で500℃×10時間の最
終焼鈍を実施した。なお、表2の試料No5については
クラッドさせることなく単独の箔とした。(Example 1) Aluminum ingots of various compositions shown in Table 1 were face-cut, then hot-rolled, clad-rolled to have a structure shown in Table 2, and then cold-rolled (including intermediate annealing).
Then, final annealing was performed at 500 ° C. for 10 hours in an inert gas atmosphere. Note that the sample No. 5 in Table 2 was used as a single foil without being clad.
【0020】そして、得られた各アルミニウム箔の芯部
の立方体方位の占有率を調べた。その結果を表2に示
す。Then, the occupancy ratio of the cubic orientation of the core of each of the obtained aluminum foils was examined. The results are shown in Table 2.
【0021】次に、以下の条件でエッチングを実施した
のち、得られたアルミニウム箔を5%ホウ酸液中で25
0Vに化成したときの静電容量を測定した。その結果
を、試料No5の静電容量を100%としたときの相対
比較にて表2に示す。Next, after performing etching under the following conditions, the obtained aluminum foil was subjected to 25% in a 5% boric acid solution.
The electrostatic capacity when forming to 0V was measured. The results are shown in Table 2 as a relative comparison when the capacitance of Sample No. 5 is 100%.
【0022】[エッチング条件] 前処理:なし 一次エッチング 液組成:5%HCl+30%H2 SO
4 、液温:80℃、電流密度:直流20A/dm2 、時
間:80秒 二次エッチング 液組成:5%HCl+0.1%H2 C
2 O4 、液温:80℃、電流密度:直流5A/dm2 、
時間:10分[Etching conditions] Pretreatment: None Primary etching liquid composition: 5% HCl + 30% H 2 SO
4 , liquid temperature: 80 ° C., current density: DC 20 A / dm 2 , time: 80 seconds Secondary etching liquid composition: 5% HCl + 0.1% H 2 C
2 O 4 , liquid temperature: 80 ° C., current density: direct current 5 A / dm 2 ,
Time: 10 minutes
【表1】 [Table 1]
【表2】 上記表2の結果からわかるように、本発明範囲のMg表
面濃化層を有する本発明実施品は、本発明範囲を逸脱す
る比較品に較べて静電容量を増大し得ることを確認し得
た。[Table 2] As can be seen from the results in Table 2 above, it can be confirmed that the inventive product having the Mg surface concentrated layer within the inventive range can increase the capacitance as compared with the comparative product deviating from the inventive range. It was
【0023】(実施例2)前記表2の各試料に対して、
一次エッチング及び二次エッチングの条件を表3のよう
に設定してエッチングを実施したのち、得られたアルミ
ニウム箔を5%ホウ酸液中で250Vに化成したときの
静電容量を測定した。その結果を、表2の試料No5の
静電容量を100%としたときの相対比較にて示す。Example 2 For each sample in Table 2 above,
After performing the etching by setting the conditions of the primary etching and the secondary etching as shown in Table 3, the capacitance of the obtained aluminum foil was measured at 250 V in 5% boric acid solution. The results are shown in a relative comparison when the capacitance of sample No. 5 in Table 2 is 100%.
【0024】[0024]
【表3】 上記表3の結果からわかるように、本発明に係るエッチ
ング方法の条件を満足する実施品は、条件を逸脱する比
較品に較べて静電容量を増大し得ることを確認し得た。[Table 3] As can be seen from the results in Table 3 above, it can be confirmed that the implementation product satisfying the conditions of the etching method according to the present invention can increase the capacitance as compared with the comparison product deviating from the conditions.
【0025】[0025]
【発明の効果】この発明に係る電解コンデンサ電極用ア
ルミニウム箔は、アルミニウム純度99.9%以上で、
表面から厚さ1μmを除く芯部の立方体方位占有率が9
0%以上であり、かつ箔の少なくとも片面において表面
から厚さ1μmの表層部のMg濃度が200〜2000
ppmであることを特徴とするものであるから、エッチ
ング性に優れ、エッチング処理により極めて大きな拡面
率を得ることができる。従って、大きな静電容量を有し
電気的特性に優れた電解コンデンサ電極用アルミニウム
箔となしうる。The aluminum foil for electrolytic capacitor electrodes according to the present invention has an aluminum purity of 99.9% or more,
Except for the thickness of 1 μm from the surface, the occupancy rate of the cubic orientation of the core is 9
0% or more, and the Mg concentration of the surface layer portion having a thickness of 1 μm from at least one surface of the foil is 200 to 2000.
Since it is characterized by being ppm, it has excellent etching properties, and an extremely large surface area ratio can be obtained by etching treatment. Therefore, an aluminum foil for an electrolytic capacitor electrode having a large capacitance and excellent electric characteristics can be obtained.
【0026】また、この発明に係るエッチング方法によ
れば、上記のアルミニウム箔に、HCl:3〜10%、
H2 SO4 :10〜40%を含む水溶液中で、液温:7
0〜90℃、電流密度:10〜40A/dm2 の条件に
て一次の電解エッチングを実施した後、HCl:3〜1
0%あるいはさらにH2 C2 O4 :1%以下を含む水溶
液中で、液温:70〜95℃、電流密度:0〜10A/
dm2 の条件にて、二次の電解エッチングまたは化学エ
ッチングを実施するから、エッチングピットを適度に分
散させることができるとともに、孔径を拡大でき、益々
拡面率が大きく静電容量の大きい電解コンデンサ電極箔
を提供できる。According to the etching method of the present invention, HCl: 3 to 10%,
H 2 SO 4: in an aqueous solution containing 10-40%, a liquid temperature: 7
After performing the primary electrolytic etching under the conditions of 0 to 90 ° C. and current density of 10 to 40 A / dm 2 , HCl: 3 to 1
0% or further, in an aqueous solution containing 1% or less of H 2 C 2 O 4 : liquid temperature: 70 to 95 ° C., current density: 0 to 10 A /
Since secondary electrolytic etching or chemical etching is carried out under the condition of dm 2 , the etching pits can be dispersed appropriately, the hole diameter can be expanded, and the electrolytic capacitor having a larger surface area ratio and a larger electrostatic capacity. An electrode foil can be provided.
【0027】また、上記において、芯部のMg濃度が2
ppm未満である場合には、Mgの表面濃化層の効果が
より有効に発揮され、さらに静電容量に優れたアルミニ
ウム箔となし得る。In the above, the Mg concentration in the core is 2
When the content is less than ppm, the effect of the Mg surface concentrated layer is more effectively exhibited, and the aluminum foil having excellent capacitance can be obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 礒山 永三 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 (72)発明者 遠藤 茂 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Isoyama Eizo 6-224 Kaiyamacho Sakai-shi, Showa Aluminum Co., Ltd. (72) Inventor Shigeru Endo 6-224 Kaiyamacho Sakai-shi Showa Aluminum Co., Ltd. Within
Claims (4)
面から厚さ1μmを除く芯部の立方体方位占有率が90
%以上であり、かつ箔の少なくとも片面において表面か
ら厚さ1μmの表層部のMg濃度が200〜2000p
pmであることを特徴とする電解コンデンサ電極用アル
ミニウム箔。1. A cubic orientation occupancy rate of the core portion excluding a thickness of 1 μm from the surface is 90 with an aluminum purity of 99.9% or more.
%, And the Mg concentration of the surface layer portion having a thickness of 1 μm from at least one surface of the foil is 200 to 2000 p.
Aluminum foil for electrolytic capacitor electrodes, which is pm.
求項1に記載の電解コンデンサ電極用アルミニウム箔。2. The aluminum foil for an electrolytic capacitor electrode according to claim 1, wherein the core has a Mg concentration of less than 2 ppm.
面から厚さ1μmを除く芯部の立方体方位占有率が90
%以上であり、かつ箔の少なくとも片面において表面か
ら厚さ1μmの表層部のMg濃度が200〜2000p
pmである電解コンデンサ電極用アルミニウム箔を、H
Cl:3〜10%、H2 SO4 :10〜40%を含む水
溶液中で、液温:70〜90℃、電流密度:10〜40
A/dm2 の条件にて一次の電解エッチングを実施した
後、HCl:3〜10%あるいはさらにH2 C2 O4 :
1%以下を含む水溶液中で、液温:70〜95℃、電流
密度:0〜10A/dm2 の条件にて、二次の電解エッ
チングまたは化学エッチングを実施することを特徴とす
る電解コンデンサ電極用アルミニウム箔のエッチング方
法。3. A cubic orientation occupancy rate of the core portion excluding a thickness of 1 μm from the surface is 90 when the aluminum purity is 99.9% or more.
%, And the Mg concentration of the surface layer portion having a thickness of 1 μm from at least one surface of the foil is 200 to 2000 p.
pm is the aluminum foil for electrolytic capacitor electrodes
Cl: 3~10%, H 2 SO 4: in an aqueous solution containing 10-40%, a liquid temperature: 70 to 90 ° C., a current density: 10 to 40
After performing the primary electrolytic etching under the condition of A / dm 2 , HCl: 3 to 10% or further H 2 C 2 O 4 :
Electrolytic capacitor electrode characterized by performing secondary electrolytic etching or chemical etching in an aqueous solution containing 1% or less under the conditions of liquid temperature: 70 to 95 ° C. and current density: 0 to 10 A / dm 2. Method for etching aluminum foil.
求項3に記載の電解コンデンサ電極用アルミニウム箔の
エッチング方法。4. The method for etching an aluminum foil for electrolytic capacitor electrodes according to claim 3, wherein the core has a Mg concentration of less than 2 ppm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10016594A JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5-355011 | 1993-12-29 | ||
JP35501193 | 1993-12-29 | ||
JP10016594A JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07235458A true JPH07235458A (en) | 1995-09-05 |
JP2809988B2 JP2809988B2 (en) | 1998-10-15 |
Family
ID=26441249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10016594A Expired - Lifetime JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2809988B2 (en) |
-
1994
- 1994-05-13 JP JP10016594A patent/JP2809988B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2809988B2 (en) | 1998-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2008231512A (en) | Aluminum substrate for etching, and aluminum electrode material for electrolytic capacitor using the same | |
JP2907718B2 (en) | Etching method of aluminum foil for electrolytic capacitor electrode | |
JP2803762B2 (en) | Manufacturing method of aluminum foil for electrolytic capacitor | |
JP2004319794A (en) | Aluminum material for electrolytic capacitor electrode, its manufacturing method and electrolytic capacitor | |
JPH07235458A (en) | Aluminum foil for forming electrode of electrolytic capacitor and etching method therefor | |
JP4125521B2 (en) | Aluminum foil for electrolytic capacitors | |
JP2002118035A (en) | Electrolytic capacitor electrode aluminum foil | |
JPH1116787A (en) | Manufacture of aluminum electrode foil for electrolytic capacitor large in electrostatic capacitance per unit loss of weight on etching | |
JP4539912B2 (en) | Aluminum foil for electrolytic capacitor anode and manufacturing method thereof | |
JP3450083B2 (en) | Aluminum foil for electrode of electrolytic capacitor and method for producing the same | |
JP3218176B2 (en) | Aluminum foil for electrolytic capacitor electrodes | |
JP2000228333A (en) | Manufacture of aluminum foil for electrolytic capacitor electrode | |
JP2000204456A (en) | Production of aluminum foil for electrolytic capacitor electrode | |
JPH0489118A (en) | Production of aluminum foil for electrolytic capacitor anode | |
JPH07211593A (en) | Aluminum foil for electrolytic-capacitor electrode and its etching method | |
JP2010100917A (en) | Aluminum foil for electrolytic capacitor electrode | |
JP5921951B2 (en) | Method for producing aluminum foil for electrolytic capacitor | |
JPH04179110A (en) | Aluminum alloy foil for electrolytic capacitor electrode | |
JP4958464B2 (en) | Aluminum foil for electrolytic capacitor electrode | |
JP4539911B2 (en) | Aluminum foil for electrode capacitor anode and manufacturing method thereof | |
JPH0581164B2 (en) | ||
JP2007009318A (en) | Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor | |
JP2572479B2 (en) | Aluminum foil for electrolytic capacitor electrodes | |
JPH1136033A (en) | Aluminum material for electrolytic capacitor | |
JP3945597B2 (en) | Aluminum material for electrolytic capacitors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20080731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20090731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20090731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100731 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20100731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 13 Free format text: PAYMENT UNTIL: 20110731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110731 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 14 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 14 Free format text: PAYMENT UNTIL: 20120731 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 15 Free format text: PAYMENT UNTIL: 20130731 |
|
EXPY | Cancellation because of completion of term |