JPH07235420A - Fe-rh magnetic thin film and manufacture thereof - Google Patents

Abstract

PURPOSE:To manufacture an Fe-Rh regular magnetic thin film which exhibits steep magnetization transition substantially equivalent to that of bulk characteristic by relaxing stress in the thin film and forming a film of a thickness of specific Angstrom . CONSTITUTION:At least four or more of magnetic thin film layers 2 each containing composition of FexRh(1-x) and nonmagnetic thin films 3 each having a melting point for generating a compression stress of 1000 deg.C or higher are alternately laminated on a board 1. In this case, 0.45<=X<=0.55 is satisfied.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an Fe-Rh magnetic thin film and a method for producing the same, and more particularly to a technique effective when applied to a magnetic thin film applicable to various sensors, actuators, micromachines and the like.

[0002]

2. Description of the Related Art An alloy with a composition near Fe-50 at% Rh is C
It is an sC1 type bcc (body-centered-curbic) ordered (body-centered cubic lattice structure) alloy. This ordered alloy is antiferromagnetic at low temperatures, but transitions to ferromagnetism at 60 ° C to 100 ° C. Since about 1100 G of magnetization is generated discontinuously from the state of zero magnetization, there are many possible applications such as a temperature sensor and a heat-sensitive drive actuator. This b
If the cc ordered alloy can be formed in the form of a thin film, higher sensitivity, higher speed, and smaller size are possible, and it is expected that the range of application will be expanded.

[0003]

However, it is very difficult to form the alloy as a thin film. This is because when FeRh is formed by a thin film process, it contains many defects.
A large stress is applied when the regular lattice is assembled. This large stress has two disadvantages. One is that when the film thickness is increased above a certain level, it peels off.

FIG. 8 shows that Fe-Rh is high frequency (R
F) is the stress when the film is formed by the direct current (DC) sputtering method, and the amount of warp of the Si wafer is measured using a 2.5 inch size and 250 μm thick Si wafer. The stress of this Fe-Rh thin film is a huge tensile stress of about 3.8 × 10 ⁹ dyn / cm ² , and as the Fe-Rh film thickness increases, S
The warp amount of the i-wafer increases. At a film thickness of 4000 Å in which the warp amount exceeds 60 μm, peeling of the Fe—Rh film occurs.

The other is that the magnetic characteristics are deteriorated by stress. As shown in FIG. 9, the behavior of magnetization of Fe-Rh formed in the thin film is largely different from that of the bulk magnetic characteristics of FIG.

As described above, in order to apply the Fe-Rh film to a sensor or an actuator, a manufacturing method capable of controlling the stress applied to the film to form the film thickness and a manufacturing method for preventing deterioration of the temperature characteristic of magnetization equivalent to that of the bulk. New technology is needed.

The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a dense film quality that does not cause peeling or cracks even in a thick thin film, and an antiferromagnetic material which is equivalent to bulk and has a strong antiferromagnetic property. It is to provide a technique capable of obtaining the characteristics of magnetic transition.

Another object of the present invention is to relax the stress in the thin film to enable the formation of a film having a thickness of 4000 Å or more, and to exhibit a steep magnetization transition almost equivalent to the bulk property. To provide a technology that enables the production of

[0009]

The outline of typical ones of the inventions disclosed in the present invention will be briefly described as follows.
It is as follows.

(1) A magnetic thin film layer having a composition of Fe _x Rh _(1-x) on a substrate and a melting point of 1000 ° C. for generating compressive stress.
At least four layers or more of the above non-magnetic thin film layers are alternately laminated. However, 0.45 ≦ X ≦ 0.55
Is.

(2) Ir, Pt, P is added to the magnetic thin film layer.
It is characterized in that at least one element selected from d, Ru, and Os is added at a ratio of 5 atm% or less.

(3) The non-magnetic film layer is SiO ₂ , Si
Non-metal such as N, SiC, BaTiO ₃ or W, M
It is characterized by being composed of one or more metals selected from o, Ta, Nb, Zr and Ti.

(4) The thickness of the magnetic thin film layer is 100 Å or more and 4000 Å or less.

(5) On a thin film in which an Fe layer having a thickness of 10 Å or more and an Rh layer having a thickness of 10 Å or more are alternately laminated, a nonmagnetic layer having a stress opposite to the stress of the thin film is alternately provided. It is characterized in that at least four layers are laminated.

(6) The substrate temperature is 100 ° C. or higher on the substrate 1
Fe _x Rh _(1-x) (0.45 ≦ X
A magnetic thin film layer having a composition of ≦ 0.55) and a non-magnetic thin film layer having a melting point of 1000 ° C. or more that generates compressive stress are alternately laminated at least four layers to form a Fe—Rh magnetic thin film. A method for producing a Fe-Rh magnetic thin film, which is characterized.

(7) A heat treatment anneal is performed after the formation of the laminated film.

[0017]

According to the above-mentioned means, the stress in the thin film is relaxed by offsetting the stress by stacking the non-magnetic layer having the stress opposite to that of the Fe-Rh film without changing the Fe-Rh film forming conditions. Therefore, it is possible to form a film with a thickness of 4000 Å or more,
Fe-R showing sharp magnetic transition almost equivalent to bulk characteristics
An h-ordered magnetic thin film can be produced.

As a result, it is possible to obtain a dense film quality in which delamination and cracks do not occur even in a thick thin film and an antiferromagnetic-ferromagnetic transition characteristic equivalent to that of a bulk.

[0019]

Embodiments of the present invention will now be described in detail with reference to the drawings.

In all the drawings for explaining the embodiments, those having the same function are designated by the same reference numerals, and the repeated description will be omitted.

Example 1 FIG. 1 shows Example 1 according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 1 is shown in FIG.
As shown in, a magnetic film 2 which is a first layer film having a tensile stress is provided on a substrate 1, a non-magnetic film 3 having a compressive stress which is a second layer film is provided on the magnetic film 2. A magnetic film 4 which is a third layer film having a tensile stress is provided, and a non-magnetic film 5 which is a fourth layer film having a compressive stress is laminated thereon.

As the substrate 1, for example, a glass substrate, a quartz substrate or the like is used.

Fe-Rh films are used as the magnetic films _{2 and 4} , and SiO ₂ and Si are used as the non-magnetic films 3 and 5.
Non-metal film such as N, SiC, BaTiO ₃ or W,
A metal film such as Mo, Ta, Nb, Zr, or Ti is used,
For example, SiO ₂ is used.

Generally, as a method of reducing the stress of the film, the film forming rate in vapor deposition or sputtering is slowed. Further, it is effective to raise the substrate temperature to some extent, but the Fe—Rh thin film causes a huge stress of about 10 ⁹ dyn / cm ^{2, and} therefore these conditions cannot be sufficiently dealt with. And when the compression and tensile stress films are formed independently,
When the film thickness is thin, a continuous film state is maintained by the adhesive force with the glass substrate 1, but cracks or peeling occur when the internal stress of the film exceeds the adhesive force with the substrate 1.

Therefore, in the first embodiment, as shown in FIG. 1, when the compressive and tensile stress films are alternately laminated, the stress of the film formation is canceled and the stress applied to the substrate 1 side becomes zero or minute. Therefore, a laminated film having a large film thickness can be easily manufactured without deteriorating the film quality.

The magnetic substance is Fe-50 at% Rh.
Non-magnetic fcc (face-centered-curbic) in the vicinity composition
A thin film having a structure (face-centered cubic lattice structure) is easily obtained. Therefore, it is necessary to transform into a magnetic material having a bcc structure by heat treatment. When the fcc structure remains when the thin film is deposited, when the fcc is transformed to bcc in the heat treatment process, if a compressive stress is applied to the thin film, the volume change is promoted to facilitate the transformation.

Next, the design guideline for the laminated structure of the first embodiment will be described with reference to experimental examples.

The design guideline for the laminated structure of the first embodiment is that a Si wafer of 3 inches and a thickness of 0.24 mm is used as the substrate 1 of the experimental example, and the Fe of the first embodiment is placed on the Si wafer.
-Rh magnetic thin film is formed. The stress of the Fe-Rh thin film obtained in this experimental example is -3.8 × 10 ⁹ dyn / cm ² (tensile), and the warp amount of a 3 inch, 0.24 mm thick Si wafer is per 1000Å- It becomes 8.8 μm (tensile).

On the other hand, when SiO ₂ is used as the non-magnetic film 3, it is as follows. The stress value of SiO ₂ is + 1.6 × 10 ⁹ dyn / c when a film is formed at a sputtering gas pressure of 0.3 Pa.
m ² (compression), the warp amount of the Si wafer is 100
It becomes +3.8 μm (compressed) per 0Å. At 0.6 Pa, it is 0.78 × 10 ⁹ dyn / cm ² , and the amount of warpage of the Si wafer is +1.8 μm (compression) per 1000 Å.

In order to form a stress-free Fe-Rh / SiO ₂ laminated film, the amount of warpage may be set so as to cancel each other. For example, if the Fe-Rh layer is formed to 2000 liters, S
Since the warp amount of the i-wafer is -17.6 μm, SiO ₂ having reverse stress as the non-magnetic layer is adjusted to a film thickness such that the warp amount of the Si wafer is +17.6 μm.

The SiO ₂ film thickness at which the warp amount of the Si wafer becomes +17.6 μm is about 4750 Å when the sputtering gas pressure is 0.3 Pa, while it is about 10000 Å when the stress is small and the sputtering gas pressure is 0.6 Pa. A film thickness is required. If the non-magnetic film is thick, the total magnetization will decrease, so
It is desirable to make the nonmagnetic film as thin as possible.

When SiO ₂ is used for the non-magnetic film 3, a high stress value (a large amount of warp) is obtained and the sputtering gas pressure is 0.1.
The film forming condition is 3 Pa. When a material other than SiO ₂ is used for the non-magnetic film, it is basically necessary to select the film-forming conditions so that high stress can be obtained so that the non-magnetic film 3 can be designed thin.

(Second Embodiment) FIG. 2 shows a second embodiment according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 2 is shown in FIG.
As shown in, Fe-50at% Rh film 1 is formed on the substrate 11.
2 was sputtered under the conditions of Ar gas pressure of 0.3 Pa and sputtering power of 200 W to form 2000 Å film, and then SiO ₂ film 13 was formed on the film of 4750 Å under the same conditions of Ar gas pressure of 0.3 Pa and sputtering power of 500 W. . The stress of this SiO ₂ film 13 was a compression of about 1.6 × 10 ⁹ dyn / cm ² . Fe-50at% Rh film 12 as first layer, second layer
A SiO ₂ film 13 was formed as a layer. This film formation was alternately repeated to form a Fe-50 at% Rh / SiO ₂ laminated film. The number of layers is 5, and the total film thickness is 3.38 μm.

The Fe-50 at% Rh film 12 is formed on the Fe gas at an Ar gas pressure of 0.1.
When continuously sputtered under the conditions of 3 Pa and a sputtering power of 200 W, the film was peeled off from the glass substrate 11 due to stress when the film thickness reached 4000 Å or more. However, the above F
When the laminated structure film of the e-50 at% Rh film 12 and the SiO ₂ film 13 is formed, peeling of the film is not observed, and the total stress of the laminated film is the warp of the Si wafer of the above-mentioned experimental example formed at the same time. It was confirmed that it was zero apparently because it was hardly recognized. The laminated thin film was annealed at 600 ° C. for 10 hours. As a result of measuring the temperature change of the magnetization with an applied magnetic field of 1 kG, a characteristic showing a sharp magnetization transition almost equivalent to the bulk shown in FIG. 10 was obtained.

(Third Embodiment) FIG. 3 shows a third embodiment according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 3 is as shown in FIG.
As shown in, Fe-50at% Rh film 1 is formed on the substrate 11.
No. 2 was sputtered under the conditions of Ar gas pressure of 0.3 Pa and sputtering power of 200 W to form a film of 2000 Å, and then SiN film 23 was formed on the film of 3040 Å under the conditions of Ar gas pressure of 0.3 Pa and sputtering power of 500 W. This SiN
The stress of the membrane 23 was about 2.5 × 10 ⁹ dyn / cm ² compression. The Fe-50 at% Rh film 12 was formed as the first layer, and the SiN film 23 was formed as the second layer. This film formation was alternately repeated to form a Fe-50 at% Rh / SiN laminated film. The number of layers is 5, and the total film thickness is 2.52 μm.

The Fe-50at% Rh film 12 was formed at an Ar gas pressure of 0.1.
When continuously sputtered under the conditions of 3 Pa and a sputtering power of 200 W, the film was peeled off from the substrate 11 due to stress when the film thickness reached 4000 Å or more. However, the above Fe-5
When the laminated structure film of the 0 at% Rh film 12 and the SiN film 23 was formed, no peeling of the film was observed, and the total stress of the laminated film was almost the same as the warp of the Si wafer of the experimental example formed at the same time. It was confirmed that it was zero apparently because it was not there. The laminated thin film is 600 ℃
Annealing was performed for 10 hours. As a result of measuring the temperature change of the magnetization with an applied magnetic field of 1 kG, a characteristic showing a sharp magnetization transition almost equivalent to the bulk shown in FIG. 10 was obtained.

(Fourth Embodiment) FIG. 4 shows a fourth embodiment according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 4 is shown in FIG.
As shown in, Fe-50at% Rh film 1 is formed on the substrate 11.
No. 2 was sputtered under the conditions of Ar gas pressure of 0.3 Pa and sputtering power of 200 W to form 2000 Å film, and then W film 33 was formed on the film of 3080 Å under Ar gas pressure of 0.3 Pa and sputtering power of 500 W. The stress of the W film 33 was a compression of about 2 × 10 ⁹ dyn / cm ² . The Fe-50 at% Rh film 12 was formed as the first layer, and the W film 33 was formed as the second layer. By repeating this film formation alternately, Fe-50at% R
An h / W laminated film was formed. The number of layers is 5, and the total film thickness is 2.9 μm.

When the Fe-50 at% Rh film 12 was continuously sputtered under the conditions of Ar gas pressure of 0.3 Pa and sputtering power of 200 W, the film was peeled from the substrate 11 due to stress when the film thickness was 4000 Å or more. However, the above Fe
When a laminated structure film of -50 at% Rh film 12 and W film 33 is formed, no peeling of the film is observed, and the total stress of the laminated film is almost the same as the warp of the Si wafer of the experimental example formed at the same time. Since it was not possible, it was confirmed that it was zero apparently. The laminated thin film is 600 ℃
Annealing was performed for 10 hours. As a result of measuring the temperature change of the magnetization with an applied magnetic field of 1 kG, a characteristic showing a sharp magnetization transition almost equivalent to the bulk shown in FIG. 10 was obtained.

(Fifth Embodiment) FIG. 5 shows a fifth embodiment according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 5 is shown in FIG.
As shown in Fig. 1, Ar gas pressure is 0.3 Pa on the substrate 11, Rh41 is sputtered on the first layer under the condition of direct current (DC) sputtering power 62 W to form 100 Å, and then Fe is formed on the second layer on the second layer.
42 was formed at 100 Å with a sputtering power rf of 132W. The layer thickness is 100 Å each, the number of layers is 5 layers each, and the total Fe-Rh film thickness is 1000 Å. Furthermore Si
The O ₂ layer has the same Ar gas pressure of 0.3 Pa and sputtering power of 500 W.
2280Å formed. This lamination was repeated 10 times to form a Fe-Rh total film thickness of 1 μm. In this laminated structure as well as in Example 2, no change was observed in the warp of the Si wafer of the above-described experimental example formed at the same time, and Fe-Rh / S
The total stress of the iO ₂ laminated film became almost zero.

Under the same conditions, the Rh film 41 and the Fe film 42 are
Fe-Rh formed by repeating 100 Å for the same number of times
The composition analysis result of was just Fe-Rh (50/50).

The above RhFeSiO ₂ laminated film was formed at 600 ° C.
No peeling or cracks were observed in the sample annealed at 50 ° C. for 50 hours, and the temperature characteristic showing a sharp magnetization transition similar to that of the bulk was obtained.

(Sixth Embodiment) FIG. 6 shows a sixth embodiment according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 6 is shown in FIG.
As shown in, the Ar gas pressure on the substrate 11 is 0.3 Pa,
Using a target in which 3 atm% of Ir was added to the composition of Fe-50 at% Rh, Ar gas pressure was 0.3 Pa and high frequency (RF)
Sputtering is performed under the condition of a sputtering power of 200 W,
After forming a 2000 Å film 51, a 4750 Å SiO ₂ film was formed thereon by sputtering. Fe-50 at% Rh film 51 with 3 atm% Ir added as the first layer, second layer
A SiO ₂ film 13 was formed as a layer. This film formation is alternately repeated to add Fe-50 at% Rh / SiO containing 3 atm% Ir.
_Two laminated films were formed.

The number of layers is 5 layers each, Fe-50 with 3 atm% Ir added.
At% Rh composition film thickness is 1 μm, total film thickness is 2.5
2 μm. Fe-50at% Rh thin film Ar gas pressure of 0.
When continuously sputtered under the conditions of 3 Pa and high-frequency sputtering power of 200 W, the film was peeled off from the substrate 11 due to stress when the film thickness became 4000 Å or more. However, 3at
Fe-50at% Rh film 51 with m% Ir added and SiO ₂ film 13
No peeling of the film was observed in the case of the laminated structure film of
Moreover, it was confirmed that the total stress of the laminated film was apparently zero, because the warp of the Si wafer of the experimental example formed at the same time was hardly recognized. The laminated thin film was annealed at 600 ° C. for 10 hours.

As a result of measuring the temperature change of the magnetization with an applied magnetic field of 1 kG, a characteristic showing a steep magnetization transition almost equal to that of the bulk shown in FIG. 10 was obtained. Since 3 atm% of Ir is added, the magnetization transition temperature is about 200 ° C, which is about 1% compared to that without addition.
Shifted to the high temperature side of 50 ° C.

The Fe-50 at% Rh composition was 3a as described above.
Fe- with tm% Pt, Pd, Ru and Os added respectively
A laminated film having a structure in which a 50 at% Rh film and a SiO ₂ layer were laminated was produced under the same sputtering conditions, but no peeling or cracking due to stress occurred. Further, a temperature characteristic having antiferromagnetism-ferromagnetism showing a steep magnetization transition equivalent to that of bulk was obtained by heat treatment at 600 ° C. for 10 hours.

However, Fe-50 at% R with 3 atm% Pt added
The magnetization transition temperature of the h film was shifted to about 125 ° C. and about 75 ° C. high temperature side, and the magnetization transition temperature of the 3 atm% Ru added Fe-50 at% Rh film was shifted to about 170 ° C. and about 120 ° C. high temperature side. On the other hand, the magnetization transition temperature of the Fe-50 at% Rh film with 3 atm% Pd added was −50 ° C., which was shifted to a low temperature side of about 100 ° C.
Similar to Ir, Pt, Pd, Ru, and Os showed the effect of changing the magnetization transition temperature, which changes to antiferromagnetic-ferromagnetic.

(Embodiment 7) FIG. 7 shows an embodiment 7 according to the present invention.
3 is a cross-sectional view showing the configuration of the thin film of FIG.

The Fe-Rh magnetic thin film of Example 7 is as shown in FIG.
As shown in FIG. 3, a 100 Å film 61 was formed on the substrate 11 by using Ar gas pressure of 0.3 Pa and using a Rh target of 1.5 atm% Ir added as the first layer with a direct current (DC) sputtering power of 62 W. After that, the second layer was formed on top of it by using 1.5 atm% added Fe target and 1.5 atm% Ir.
A 100 Å film 62 was formed from the added Fe film with a high frequency sputtering power of 132 W. Under this condition, 1.5 atm% Ir added Rh
The film 61 and the 1.5 atm% -added Fe film 62 were alternately formed.

The number of layers is 5 layers each, and the total film thickness is 1.5 atm% Ir-added Fe-1.5 atm% Ir-added Rh.
It is Å. This 1.5 atm% Ir-added Fe-1.5 atm% I
After forming each 5 layers of r-added RhR layers, the SiO ₂ film 13 was formed with the same Ar gas pressure of 0.3 Pa and high frequency sputtering power of 500 W.
A film of 2280Å was formed. This 1.5 atm% Ir added F
e-1.5 atm% Ir-added Rh film 5 layers and SiO ₂ film 1-layer were repeated 10 times each, and 1.5 atm% Ir-added Fe-1.
A 5 μm-thick Ir-added Rh total laminated film having a thickness of 1 μm was formed.

Also in this laminated structure, as in the first embodiment,
No change was observed in the warp of the Si wafer of the experimental example formed at the same time, and the total stress of the 1.5 atm% added IrFe-1.5 atm% Ir added Rh / SiO ₂ laminated film was almost zero. The composition of a thin film obtained by stacking Fe containing 1.5 atm% Ir and Rh containing 1.5 atm% Ir under the same conditions as above was Fe / Rh of exactly 50/50 and Ir of 3
It was included atm%.

The laminated film described above [IrFe / 1.5 atm% added]
IrRh / SiO _{2 with} 1.5 atm% added at 600 ° C.
No peeling or cracks were observed in the sample annealed for a while,
A temperature characteristic showing a sharp magnetic transition similar to that of the bulk was obtained. Further, in the Rh-Fe film with 3 atm% Ir added, the magnetization transition temperature at which antiferromagnetism changes to ferromagnetism shifts to a high temperature side to about 200 ° C. as in Example 4, and Ir increases the magnetization transition temperature. The effect was seen.

In the same manner as described above, a target in which Pt, Pd, Ru, and Os were replaced by 1.5 atm% for the Fe and Rh targets was used to form a film having the same laminated structure as described above. Similar to the case of adding Ir, no peeling or cracking due to stress was observed, and a temperature characteristic with antiferromagnetic-ferromagnetic property showing steep magnetization transition equivalent to that of bulk was obtained by heat treatment at 600 ° C. for 10 hours. It was

Further, as in Example 4, the magnetization transition temperature changed as follows. 3 atm% Pt-added Fe-50 at%
The magnetization transition temperature of the Rh film shifted to about 125 ° C. and about 75 ° C. high temperature side, and the magnetization transition temperature of the 3 atm% Ru-added Fe-50 at% Rh film shifted to about 170 ° C. and about 120 ° C. high temperature side. On the other hand, the magnetization transition temperature of the Fe-50 at% Rh film with 3 atm% Pt added was −50 ° C., which was shifted to the low temperature side of about 100 ° C.

Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

[0061]

As described above, according to the present invention, an Fe-Rh ordered magnetic thin film capable of forming a film having a thickness of 4000 Å or more and exhibiting a steep magnetization transition almost equivalent to the bulk property is produced. can do.

As a result, even in a thick thin film, it is possible to obtain a dense film quality in which peeling or cracking does not occur and characteristics of antiferromagnetic-ferromagnetic transition equivalent to those of bulk.

[Brief description of drawings]

FIG. 1 is a sectional view showing the structure of a Fe—Rh magnetic thin film of Example 1 according to the present invention.

FIG. 2 is a sectional view showing a structure of a Fe—Rh magnetic thin film of Example 2 according to the present invention.

FIG. 3 is a cross-sectional view showing the structure of a Fe—Rh magnetic thin film of Example 3 according to the present invention.

FIG. 4 is a sectional view showing the structure of a Fe—Rh magnetic thin film of Example 4 according to the present invention.

FIG. 5 is a sectional view showing the structure of a Fe—Rh magnetic thin film of Example 5 according to the present invention.

FIG. 6 is a sectional view showing the structure of a Fe—Rh magnetic thin film of Example 6 according to the present invention.

FIG. 7 is a sectional view showing the structure of a Fe—Rh magnetic thin film of Example 7 according to the present invention.

FIG. 8 is a diagram showing a conventional Fe—Rh film thickness and a warp amount of a Si wafer.

FIG. 9 is a diagram showing temperature characteristics of magnetization of a Fe—Rh film thickness.

FIG. 10 is a diagram showing temperature characteristics of magnetization of Fe—Rh bulk.

[Explanation of symbols]

1 ... Substrate, 2 ... First layer magnetic film, 3 ... Second layer non-magnetic film, 4 ... Third layer magnetic film, 5 ... Fourth layer non-magnetic film, 12 ... Fe- 50 at% Rh film, 13 ... SiO ₂ film, 2
3 ... SiN film, 33 ... W film, 41 ... Rh film, 42 ... Fe
Film, 51 ... 3 atm% Ir-added Fe-50 at% Rh film, 61
… 1.5 atm% Ir added Rh film, 62… 1.5 atm% added F
e-membrane.

Claims (7)

[Claims] 1. A Fe _x Rh _(1-x) (0.45 ≦ X ≦ is formed on a substrate.
A Fe-Rh magnetic thin film, characterized in that at least four or more magnetic thin film layers having a composition of 0.55) and non-magnetic thin film layers having a melting point of 1000 ° C. or more that generate compressive stress are alternately laminated. 2. The magnetic thin film layer comprises Ir, Pt, Pd,
At least one element selected from Ru and Os, 5
The additive is added at a ratio of atm% or less.
Fe-Rh magnetic thin film described in 1. 3. The non-magnetic film layer is SiO ₂ , SiN, S
Non-metal such as iC, BaTiO ₃ or W, Mo, T
4. The method according to claim 1, comprising at least one metal selected from a, Nb, Zr and Ti.
2. An Fe-Rh magnetic thin film as described in the above item. 4. The magnetic thin film layer has a thickness of 100 Å or more and 4000 Å or less.
The Fe-Rh magnetic thin film according to any one of the above. 5. An Fe layer having a thickness of 10 Å or more and 10
Å A thin film in which Rh layers with a thickness of more than
A Fe-Rh magnetic thin film, characterized in that at least four or more non-magnetic layers having a stress opposite to that of the thin film are alternately laminated. 6. A substrate temperature of 100 ° C. or higher and 100 or higher on the substrate.
Fe _x Rh _(1-x) (0.45 ≦ X ≦ in the temperature range of 0 ° C. or lower ₎
A Fe-Rh magnetic thin film is formed by alternately laminating at least four layers of a magnetic thin film having a composition of 0.55) and a non-magnetic thin film having a melting point of 1000 ° C. or more that generates compressive stress. The method for producing the Fe-Rh magnetic thin film according to claim 1, wherein 7. The Fe—Rh according to claim 6, wherein heat treatment annealing is performed after the laminated films are formed.
Method for producing magnetic thin film.